ES487066A1 - Perfeccionamientos en dispositivos de conmutacion de estado solido - Google Patents
Perfeccionamientos en dispositivos de conmutacion de estado solidoInfo
- Publication number
- ES487066A1 ES487066A1 ES487066A ES487066A ES487066A1 ES 487066 A1 ES487066 A1 ES 487066A1 ES 487066 A ES487066 A ES 487066A ES 487066 A ES487066 A ES 487066A ES 487066 A1 ES487066 A1 ES 487066A1
- Authority
- ES
- Spain
- Prior art keywords
- type
- region
- high voltage
- state switch
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97205678A | 1978-12-20 | 1978-12-20 | |
| US97202278A | 1978-12-20 | 1978-12-20 | |
| US97202178A | 1978-12-28 | 1978-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES487066A1 true ES487066A1 (es) | 1980-09-16 |
Family
ID=27420763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES487066A Expired ES487066A1 (es) | 1978-12-20 | 1979-12-19 | Perfeccionamientos en dispositivos de conmutacion de estado solido |
Country Status (18)
| Country | Link |
|---|---|
| JP (1) | JPS6412106B2 (de) |
| KR (1) | KR830002293B1 (de) |
| AU (1) | AU529702B2 (de) |
| CH (1) | CH659151A5 (de) |
| DD (1) | DD147897A5 (de) |
| ES (1) | ES487066A1 (de) |
| FR (1) | FR2445026A1 (de) |
| GB (1) | GB2049283B (de) |
| HU (1) | HU181030B (de) |
| IE (1) | IE48892B1 (de) |
| IL (1) | IL58970A (de) |
| IN (1) | IN153497B (de) |
| IT (1) | IT1126603B (de) |
| NL (1) | NL7920184A (de) |
| PL (1) | PL220494A1 (de) |
| SE (1) | SE446139B (de) |
| SG (1) | SG32884G (de) |
| WO (1) | WO1980001337A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
| CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
| EP0075589B1 (de) * | 1981-03-27 | 1987-01-14 | Western Electric Company, Incorporated | Gate-gesteuerter diodeschalter |
| US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1547287A (fr) * | 1966-12-19 | 1968-11-22 | Lucas Industries Ltd | Diode semiconductrice |
| US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
| JPS4933432B1 (de) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5032942U (de) * | 1973-07-23 | 1975-04-10 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
-
1979
- 1979-12-06 CH CH6266/80A patent/CH659151A5/de not_active IP Right Cessation
- 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
- 1979-12-06 NL NL7920184A patent/NL7920184A/nl unknown
- 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
- 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
- 1979-12-10 HU HU79WE614A patent/HU181030B/hu unknown
- 1979-12-14 DD DD79217696A patent/DD147897A5/de unknown
- 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
- 1979-12-17 IL IL58970A patent/IL58970A/xx unknown
- 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
- 1979-12-18 FR FR7930946A patent/FR2445026A1/fr active Granted
- 1979-12-19 IT IT28206/79A patent/IT1126603B/it active
- 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
- 1979-12-19 ES ES487066A patent/ES487066A1/es not_active Expired
- 1979-12-20 KR KR1019790004540A patent/KR830002293B1/ko active
-
1980
- 1980-08-13 SE SE8005703A patent/SE446139B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
-
1984
- 1984-04-25 SG SG328/84A patent/SG32884G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55501079A (de) | 1980-12-04 |
| HU181030B (en) | 1983-05-30 |
| JPS6412106B2 (de) | 1989-02-28 |
| NL7920184A (nl) | 1980-10-31 |
| KR830002293B1 (ko) | 1983-10-21 |
| WO1980001337A1 (en) | 1980-06-26 |
| AU529702B2 (en) | 1983-06-16 |
| KR830001743A (ko) | 1983-05-18 |
| FR2445026A1 (fr) | 1980-07-18 |
| IL58970A0 (en) | 1980-03-31 |
| IE792474L (en) | 1980-06-20 |
| IN153497B (de) | 1984-07-21 |
| IT1126603B (it) | 1986-05-21 |
| GB2049283B (en) | 1983-07-27 |
| IE48892B1 (en) | 1985-06-12 |
| IL58970A (en) | 1982-07-30 |
| GB2049283A (en) | 1980-12-17 |
| IT7928206A0 (it) | 1979-12-19 |
| FR2445026B1 (de) | 1983-08-19 |
| SE8005703L (sv) | 1980-08-13 |
| PL220494A1 (de) | 1980-09-08 |
| SE446139B (sv) | 1986-08-11 |
| SG32884G (en) | 1985-02-08 |
| AU5386679A (en) | 1980-06-26 |
| DD147897A5 (de) | 1981-04-22 |
| CH659151A5 (de) | 1986-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970519 |