ES385205A1 - Metodo de fabricacion de un dispositivo semiconductor. - Google Patents
Metodo de fabricacion de un dispositivo semiconductor.Info
- Publication number
- ES385205A1 ES385205A1 ES385205A ES385205A ES385205A1 ES 385205 A1 ES385205 A1 ES 385205A1 ES 385205 A ES385205 A ES 385205A ES 385205 A ES385205 A ES 385205A ES 385205 A1 ES385205 A1 ES 385205A1
- Authority
- ES
- Spain
- Prior art keywords
- improved
- manufacture
- semiconductor devices
- making semiconductor
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Junction Field-Effect Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB01845/68A GB1261723A (en) | 1968-03-11 | 1968-03-11 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES385205A1 true ES385205A1 (es) | 1973-04-01 |
Family
ID=9993746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES385205A Expired ES385205A1 (es) | 1968-03-11 | 1970-11-05 | Metodo de fabricacion de un dispositivo semiconductor. |
Country Status (13)
Country | Link |
---|---|
US (1) | US3653978A (es) |
JP (2) | JPS5135835B1 (es) |
AT (1) | AT311417B (es) |
BE (1) | BE729657A (es) |
CA (1) | CA934882A (es) |
CH (1) | CH505473A (es) |
DE (1) | DE1913052C2 (es) |
DK (1) | DK135196B (es) |
ES (1) | ES385205A1 (es) |
FR (1) | FR2003656A1 (es) |
GB (1) | GB1261723A (es) |
NL (1) | NL162253C (es) |
NO (1) | NO129877B (es) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1316555A (es) * | 1969-08-12 | 1973-05-09 | ||
US3895966A (en) * | 1969-09-30 | 1975-07-22 | Sprague Electric Co | Method of making insulated gate field effect transistor with controlled threshold voltage |
US3988761A (en) * | 1970-02-06 | 1976-10-26 | Sony Corporation | Field-effect transistor and method of making the same |
USRE28500E (en) * | 1970-12-14 | 1975-07-29 | Low noise field effect transistor with channel having subsurface portion of high conductivity | |
US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
GB1345818A (en) * | 1971-07-27 | 1974-02-06 | Mullard Ltd | Semiconductor devices |
JPS5123432B2 (es) * | 1971-08-26 | 1976-07-16 | ||
US3728161A (en) * | 1971-12-28 | 1973-04-17 | Bell Telephone Labor Inc | Integrated circuits with ion implanted chan stops |
BE792939A (es) * | 1972-04-10 | 1973-04-16 | Rca Corp | |
US3814992A (en) * | 1972-06-22 | 1974-06-04 | Ibm | High performance fet |
US4017887A (en) * | 1972-07-25 | 1977-04-12 | The United States Of America As Represented By The Secretary Of The Air Force | Method and means for passivation and isolation in semiconductor devices |
JPS4951879A (es) * | 1972-09-20 | 1974-05-20 | ||
GB1443434A (en) * | 1973-01-22 | 1976-07-21 | Mullard Ltd | Semiconductor devices |
JPS49105490A (es) * | 1973-02-07 | 1974-10-05 | ||
US3872491A (en) * | 1973-03-08 | 1975-03-18 | Sprague Electric Co | Asymmetrical dual-gate FET |
US3867204A (en) * | 1973-03-19 | 1975-02-18 | Motorola Inc | Manufacture of semiconductor devices |
JPS5010083A (es) * | 1973-05-23 | 1975-02-01 | ||
US3983572A (en) * | 1973-07-09 | 1976-09-28 | International Business Machines | Semiconductor devices |
US3873372A (en) * | 1973-07-09 | 1975-03-25 | Ibm | Method for producing improved transistor devices |
US3855008A (en) * | 1973-08-30 | 1974-12-17 | Gen Instrument Corp | Mos integrated circuit process |
US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
US3874937A (en) * | 1973-10-31 | 1975-04-01 | Gen Instrument Corp | Method for manufacturing metal oxide semiconductor integrated circuit of reduced size |
US4075754A (en) * | 1974-02-26 | 1978-02-28 | Harris Corporation | Self aligned gate for di-CMOS |
US3876472A (en) * | 1974-04-15 | 1975-04-08 | Rca Corp | Method of achieving semiconductor substrates having similar surface resistivity |
US3958266A (en) * | 1974-04-19 | 1976-05-18 | Rca Corporation | Deep depletion insulated gate field effect transistors |
US3912545A (en) * | 1974-05-13 | 1975-10-14 | Motorola Inc | Process and product for making a single supply N-channel silicon gate device |
US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
US4051504A (en) * | 1975-10-14 | 1977-09-27 | General Motors Corporation | Ion implanted zener diode |
US4125415A (en) * | 1975-12-22 | 1978-11-14 | Motorola, Inc. | Method of making high voltage semiconductor structure |
US4075045A (en) * | 1976-02-09 | 1978-02-21 | International Business Machines Corporation | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
US4104784A (en) * | 1976-06-21 | 1978-08-08 | National Semiconductor Corporation | Manufacturing a low voltage n-channel MOSFET device |
US4052229A (en) * | 1976-06-25 | 1977-10-04 | Intel Corporation | Process for preparing a substrate for mos devices of different thresholds |
DE2631873C2 (de) * | 1976-07-15 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand |
DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
US4108686A (en) * | 1977-07-22 | 1978-08-22 | Rca Corp. | Method of making an insulated gate field effect transistor by implanted double counterdoping |
US4350991A (en) * | 1978-01-06 | 1982-09-21 | International Business Machines Corp. | Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance |
US4198252A (en) * | 1978-04-06 | 1980-04-15 | Rca Corporation | MNOS memory device |
US4274105A (en) * | 1978-12-29 | 1981-06-16 | International Business Machines Corporation | MOSFET Substrate sensitivity control |
US4393575A (en) * | 1979-03-09 | 1983-07-19 | National Semiconductor Corporation | Process for manufacturing a JFET with an ion implanted stabilization layer |
WO1981000487A1 (en) * | 1979-08-13 | 1981-02-19 | Ncr Co | Hydrogen annealing process for silicon gate memory device |
JPS56155572A (en) * | 1980-04-30 | 1981-12-01 | Sanyo Electric Co Ltd | Insulated gate field effect type semiconductor device |
US4380774A (en) * | 1980-12-19 | 1983-04-19 | The United States Of America As Represented By The Secretary Of The Navy | High-performance bipolar microwave transistor |
US4506436A (en) * | 1981-12-21 | 1985-03-26 | International Business Machines Corporation | Method for increasing the radiation resistance of charge storage semiconductor devices |
JPS593964A (ja) * | 1982-06-29 | 1984-01-10 | Semiconductor Res Found | 半導体集積回路 |
US4575746A (en) * | 1983-11-28 | 1986-03-11 | Rca Corporation | Crossunders for high density SOS integrated circuits |
DE3628754A1 (de) * | 1986-08-27 | 1988-03-17 | Nordmende Gmbh | Fernsehempfaenger mit einem gehaeuse |
JPH0797606B2 (ja) * | 1986-10-22 | 1995-10-18 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
DE3708170A1 (de) * | 1987-03-13 | 1988-09-22 | Electronic Werke Deutschland | Gehaeuse fuer ein geraet der unterhaltungselektronik |
US4990974A (en) * | 1989-03-02 | 1991-02-05 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor |
US5369295A (en) * | 1992-01-28 | 1994-11-29 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
US5525822A (en) * | 1991-01-28 | 1996-06-11 | Thunderbird Technologies, Inc. | Fermi threshold field effect transistor including doping gradient regions |
US5440160A (en) * | 1992-01-28 | 1995-08-08 | Thunderbird Technologies, Inc. | High saturation current, low leakage current fermi threshold field effect transistor |
DE4106533A1 (de) * | 1991-03-01 | 1992-09-03 | Electronic Werke Deutschland | Gehaeuse fuer einen fernsehempfaenger |
US5367186A (en) * | 1992-01-28 | 1994-11-22 | Thunderbird Technologies, Inc. | Bounded tub fermi threshold field effect transistor |
US5786620A (en) * | 1992-01-28 | 1998-07-28 | Thunderbird Technologies, Inc. | Fermi-threshold field effect transistors including source/drain pocket implants and methods of fabricating same |
US5814869A (en) * | 1992-01-28 | 1998-09-29 | Thunderbird Technologies, Inc. | Short channel fermi-threshold field effect transistors |
US5543654A (en) * | 1992-01-28 | 1996-08-06 | Thunderbird Technologies, Inc. | Contoured-tub fermi-threshold field effect transistor and method of forming same |
US5401987A (en) * | 1993-12-01 | 1995-03-28 | Imp, Inc. | Self-cascoding CMOS device |
KR100273291B1 (ko) * | 1998-04-20 | 2001-01-15 | 김영환 | 모스 전계 효과 트랜지스터의 제조 방법 |
JP2005026464A (ja) * | 2003-07-02 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPWO2007004258A1 (ja) * | 2005-06-30 | 2009-01-22 | スパンション エルエルシー | 半導体装置、およびその製造方法 |
US8930394B2 (en) * | 2010-08-17 | 2015-01-06 | Fujitsu Limited | Querying sensor data stored as binary decision diagrams |
US8874607B2 (en) * | 2010-08-17 | 2014-10-28 | Fujitsu Limited | Representing sensor data as binary decision diagrams |
US9138143B2 (en) | 2010-08-17 | 2015-09-22 | Fujitsu Limited | Annotating medical data represented by characteristic functions |
US9002781B2 (en) | 2010-08-17 | 2015-04-07 | Fujitsu Limited | Annotating environmental data represented by characteristic functions |
US9176819B2 (en) | 2011-09-23 | 2015-11-03 | Fujitsu Limited | Detecting sensor malfunctions using compression analysis of binary decision diagrams |
US9075908B2 (en) | 2011-09-23 | 2015-07-07 | Fujitsu Limited | Partitioning medical binary decision diagrams for size optimization |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
DE1439740A1 (de) * | 1964-11-06 | 1970-01-22 | Telefunken Patent | Feldeffekttransistor mit isolierter Steuerelektrode |
US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
US3388009A (en) * | 1965-06-23 | 1968-06-11 | Ion Physics Corp | Method of forming a p-n junction by an ionic beam |
US3341754A (en) * | 1966-01-20 | 1967-09-12 | Ion Physics Corp | Semiconductor resistor containing interstitial and substitutional ions formed by an ion implantation method |
NL149638B (nl) * | 1966-04-14 | 1976-05-17 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting bevattende ten minste een veldeffecttransistor, en halfgeleiderinrichting, vervaardigd volgens deze werkwijze. |
US3413531A (en) * | 1966-09-06 | 1968-11-26 | Ion Physics Corp | High frequency field effect transistor |
US3472712A (en) * | 1966-10-27 | 1969-10-14 | Hughes Aircraft Co | Field-effect device with insulated gate |
US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
-
1968
- 1968-03-11 GB GB01845/68A patent/GB1261723A/en not_active Expired
-
1969
- 1969-03-06 NL NL6903441.A patent/NL162253C/xx not_active IP Right Cessation
- 1969-03-06 CA CA044801A patent/CA934882A/en not_active Expired
- 1969-03-07 DK DK128769AA patent/DK135196B/da unknown
- 1969-03-07 US US805275A patent/US3653978A/en not_active Expired - Lifetime
- 1969-03-08 NO NO00985/69A patent/NO129877B/no unknown
- 1969-03-10 FR FR6906724A patent/FR2003656A1/fr active Pending
- 1969-03-10 BE BE729657D patent/BE729657A/xx not_active IP Right Cessation
- 1969-03-10 CH CH353269A patent/CH505473A/de not_active IP Right Cessation
- 1969-03-11 AT AT239369A patent/AT311417B/de not_active IP Right Cessation
- 1969-03-11 DE DE1913052A patent/DE1913052C2/de not_active Expired
-
1970
- 1970-11-05 ES ES385205A patent/ES385205A1/es not_active Expired
-
1975
- 1975-04-19 JP JP50048121A patent/JPS5135835B1/ja active Pending
- 1975-04-19 JP JP50048122A patent/JPS5134269B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NO129877B (es) | 1974-06-04 |
DK135196B (da) | 1977-03-14 |
GB1261723A (en) | 1972-01-26 |
AT311417B (de) | 1973-11-12 |
DE1913052C2 (de) | 1983-06-09 |
DK135196C (es) | 1977-08-29 |
NL162253C (nl) | 1980-04-15 |
JPS5134269B1 (es) | 1976-09-25 |
US3653978A (en) | 1972-04-04 |
FR2003656A1 (es) | 1969-11-14 |
CA934882A (en) | 1973-10-02 |
JPS5135835B1 (es) | 1976-10-05 |
CH505473A (de) | 1971-03-31 |
NL162253B (nl) | 1979-11-15 |
DE1913052A1 (de) | 1969-10-02 |
BE729657A (es) | 1969-09-10 |
NL6903441A (es) | 1969-09-15 |
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Date | Code | Title | Description |
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FD1A | Patent lapsed |
Effective date: 19920123 |