ES2891648T3 - Procedimiento para la fabricación de nanopartículas de núcleo/recubrimiento y nanopartículas de núcleo/recubrimie - Google Patents

Procedimiento para la fabricación de nanopartículas de núcleo/recubrimiento y nanopartículas de núcleo/recubrimie Download PDF

Info

Publication number
ES2891648T3
ES2891648T3 ES13753331T ES13753331T ES2891648T3 ES 2891648 T3 ES2891648 T3 ES 2891648T3 ES 13753331 T ES13753331 T ES 13753331T ES 13753331 T ES13753331 T ES 13753331T ES 2891648 T3 ES2891648 T3 ES 2891648T3
Authority
ES
Spain
Prior art keywords
core
coating
nanoparticles
shell
starting materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
ES13753331T
Other languages
English (en)
Spanish (es)
Inventor
Van Huong Schmidtke-Tran
Steffen Jan Niehaus
Horst Weller
Daniel Ness
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Application granted granted Critical
Publication of ES2891648T3 publication Critical patent/ES2891648T3/es
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/02—Making microcapsules or microballoons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2475—Membrane reactors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/24—Salt bath containing the element to be diffused
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00099—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor the reactor being immersed in the heat exchange medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Luminescent Compositions (AREA)
  • Manufacturing Of Micro-Capsules (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Glanulating (AREA)
ES13753331T 2012-08-30 2013-08-29 Procedimiento para la fabricación de nanopartículas de núcleo/recubrimiento y nanopartículas de núcleo/recubrimie Active ES2891648T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012215421.3A DE102012215421B4 (de) 2012-08-30 2012-08-30 Verfahren zur Herstellung von Kern/Schale-Nanopartikeln
PCT/EP2013/067898 WO2014033213A2 (de) 2012-08-30 2013-08-29 Verfahren zur herstellung von kern/schale-nanopartikeln und kern-schale-nanopartikel

Publications (1)

Publication Number Publication Date
ES2891648T3 true ES2891648T3 (es) 2022-01-28

Family

ID=49036597

Family Applications (1)

Application Number Title Priority Date Filing Date
ES13753331T Active ES2891648T3 (es) 2012-08-30 2013-08-29 Procedimiento para la fabricación de nanopartículas de núcleo/recubrimiento y nanopartículas de núcleo/recubrimie

Country Status (9)

Country Link
US (2) US10147846B2 (enExample)
EP (1) EP2890485B1 (enExample)
JP (1) JP6410107B2 (enExample)
KR (1) KR102141505B1 (enExample)
CN (1) CN104736234B (enExample)
CA (1) CA2883045A1 (enExample)
DE (1) DE102012215421B4 (enExample)
ES (1) ES2891648T3 (enExample)
WO (1) WO2014033213A2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114538369A (zh) * 2015-12-31 2022-05-27 陶氏环球技术有限责任公司 纳米结构材料的连续流动合成
CN106010499B (zh) * 2016-05-18 2020-06-12 浙江大学 核壳量子点的表面优化方法
DE102016117189A1 (de) 2016-09-13 2018-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN108264900A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
CN108269933A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置底发射qled器件及其制备方法
CN108267888A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点背光模组、显示装置和电子设备
CN108269928A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种正置底发射qled器件及其制备方法
CN108264904A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种发光材料、制备方法及半导体器件
CN108269929B (zh) * 2016-12-30 2022-06-24 Tcl科技集团股份有限公司 一种正置顶发射qled器件及其制备方法
CN108267806A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点彩色滤光片、液晶显示面板及液晶显示装置
CN108269923A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点探测器及其制备方法
CN108264894A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米发光材料、制备方法及半导体器件
CN108269891B (zh) * 2016-12-30 2021-05-18 Tcl科技集团股份有限公司 一种纳米复合材料、制备方法及半导体器件
CN108269934A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米材料、制备方法及半导体器件
CN108264901B (zh) * 2016-12-30 2022-08-05 Tcl科技集团股份有限公司 具有漏斗型能级结构的发光材料、制备方法及半导体器件
CN108269886B (zh) * 2016-12-30 2019-12-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108269935A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点薄膜及其制备方法
CN108269930B (zh) 2016-12-30 2020-05-26 Tcl科技集团股份有限公司 一种合金纳米材料、制备方法及半导体器件
CN108264905A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108281494A (zh) * 2016-12-30 2018-07-13 Tcl集团股份有限公司 一种量子点光伏器件及制备方法
CN108264903A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点照明模组及照明设备
CN108269927A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置顶发射qled器件及其制备方法
CN108269926A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点组成及其制备方法
CN108269892B (zh) * 2016-12-30 2021-06-22 Tcl科技集团股份有限公司 具有量子阱能级结构的合金材料、制备方法及半导体器件
US10096743B1 (en) * 2017-05-26 2018-10-09 Unique Materials Co., Ltd. Gigantic quantum dots
US11139422B2 (en) 2017-06-07 2021-10-05 Sumitomo Electric Industries. Ltd. Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor
CN112011327A (zh) * 2019-05-28 2020-12-01 苏州星烁纳米科技有限公司 核壳结构量子点的制备方法及由其制备的产品
US10923348B2 (en) 2019-05-29 2021-02-16 International Business Machines Corporation Gate-all-around field effect transistor using template-assisted-slective-epitaxy
CN113509899B (zh) * 2020-04-10 2024-08-20 百剂博递医药科技(上海)有限公司 反应装置、微球制备装置及萃取方法、及脂质体载药方法
DE102020216283A1 (de) 2020-12-18 2022-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Spektrometer
CN114507526B (zh) * 2022-03-10 2023-07-28 河南大学 一种硒元素贯穿的核壳结构量子点及其制备方法
CN116314886A (zh) * 2023-03-11 2023-06-23 中自环保科技股份有限公司 一种核壳纳米催化剂的制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO132685C (enExample) 1974-03-19 1977-05-24 Norsk Hydro As
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6562937B2 (en) 2000-07-25 2003-05-13 General Electric Company Continuous preparation of polycarbonate
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
DE10131173C2 (de) 2001-06-29 2003-12-04 Itn Nanovation Gmbh Verfahren zur Herstellung von Kern-Hülle-Teilchen und deren Verwendung
ATE556845T1 (de) 2001-07-20 2012-05-15 Life Technologies Corp Lumineszierende nanopartikel und ihre herstellung
DE10138970A1 (de) 2001-08-08 2003-02-20 Bayer Ag Rohrreaktor auf Basis eines Schichtstoffes
US20050129580A1 (en) 2003-02-26 2005-06-16 Swinehart Philip R. Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles
JP4528927B2 (ja) 2003-09-04 2010-08-25 独立行政法人産業技術総合研究所 複合微粒子の製造方法および複合微粒子の製造装置、並びに複合微粒子
EP1688169A4 (en) 2003-11-28 2008-10-01 Mitsubishi Chem Corp PROCESS FOR PRODUCING FINE PARTICLES OF AN ORGANIC COMPOUND
JP2005177746A (ja) 2003-11-28 2005-07-07 Mitsubishi Chemicals Corp 有機化合物微粒子の製造方法
US8454927B2 (en) 2004-08-04 2013-06-04 Crystalplex Corporation Alloyed semiconductor nanocrystals
EP1812335A4 (en) * 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
GB2429838B (en) * 2005-08-12 2011-03-09 Nanoco Technologies Ltd Nanoparticles
EP1978072A4 (en) * 2006-01-27 2009-04-08 Konica Minolta Med & Graphic SEMICONDUCTOR PROOF WITH CORE / COVER STRUCTURE AND METHOD OF MANUFACTURING THEREOF
KR100817853B1 (ko) 2006-09-25 2008-03-31 재단법인서울대학교산학협력재단 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법
JP5151993B2 (ja) * 2007-01-22 2013-02-27 コニカミノルタエムジー株式会社 コア／シェル型半導体ナノ粒子とその製造方法
JP2010535692A (ja) * 2007-08-06 2010-11-25 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ カドミウムおよびセレン含有ナノ結晶複合材料を形成する方法ならびに該方法から得られるナノ結晶複合材料
GB2454902B (en) 2007-11-22 2012-12-05 Ct Fa R Angewandte Nanotechnologie Can Gmbh A method for the manufacture of III-V particles
GB2457314A (en) * 2008-02-11 2009-08-12 Ct Angewandte Nanotech Can Apparatus and method for the manufacture of nanoparticles
JP5744468B2 (ja) * 2010-10-20 2015-07-08 シャープ株式会社 半導体ナノ粒子蛍光体
US8920766B2 (en) * 2012-08-21 2014-12-30 University Of Rochester Quantum nanostructures, compositions thereof, and methods of making and using same

Also Published As

Publication number Publication date
EP2890485A2 (de) 2015-07-08
CN104736234B (zh) 2017-07-14
US20150214433A1 (en) 2015-07-30
JP2015533630A (ja) 2015-11-26
KR102141505B1 (ko) 2020-08-05
JP6410107B2 (ja) 2018-10-24
KR20150079572A (ko) 2015-07-08
EP2890485B1 (de) 2021-06-02
US10147846B2 (en) 2018-12-04
CN104736234A (zh) 2015-06-24
DE102012215421B4 (de) 2019-08-29
WO2014033213A3 (de) 2014-05-08
WO2014033213A2 (de) 2014-03-06
DE102012215421A1 (de) 2014-03-06
US20190165211A1 (en) 2019-05-30
CA2883045A1 (en) 2014-03-06

Similar Documents

Publication Publication Date Title
ES2891648T3 (es) Procedimiento para la fabricación de nanopartículas de núcleo/recubrimiento y nanopartículas de núcleo/recubrimie
Wang et al. Stabilizing the cubic perovskite phase of CsPbI 3 nanocrystals by using an alkyl phosphinic acid
CN104024370B (zh) 具有纳米晶体核和纳米晶体壳的带绝缘体涂层的半导体结构
CN109312489A (zh) 在高温下合成核壳纳米晶体的方法
Yang et al. An efficient and surface-benign purification scheme for colloidal nanocrystals based on quantitative assessment
Nasilowski et al. Colloidal atomic layer deposition growth of PbS/CdS core/shell quantum dots
Hodlur et al. A new selenium precursor for the aqueous synthesis of luminescent CdSe quantum dots
KR101575396B1 (ko) 양자점 함유 나노복합입자 및 그 제조방법
CN107916448A (zh) 使用有机配体的混合物制备纳米晶体
KR101468985B1 (ko) 방출 파장 조절가능한 코어/도핑 쉘/쉘 구조의 양자점 및 이의 제조방법.
US20100252778A1 (en) Novel nanoparticle phosphor
Jia et al. Water-dispersible near-infrared Ag 2 S nanoclusters with tunable fluorescence for bioimaging application
CN110358528A (zh) 制造具有可控的发射波长的量子棒的方法
JP2008534424A (ja) Ｃｄｔｅ／ｇｓｈコア−シェル量子ドット
US20100038626A1 (en) Semiconductor nanoparticle aggregate, method for producing the same, and biological substance labeling agent utilizing the same
TWI825054B (zh) 半導體奈米粒子、半導體奈米粒子分散液及光學構件
US20100295016A1 (en) Fluorescent fiber containing semiconductor nanoparticles
US20170271563A1 (en) Method and apparatus for controlled semiconductor growth during synthesis of quantum dot materials
Chu et al. Synthesis and Optical Characterizations of the Fluorescence Silica Nanoparticles Containing Quantum Dots
Yang et al. Hydrothermal synthesis of high-quality thiol-stabilized CdTexSe1-x alloyed quantum dots
Bhanoth et al. Synthesis, characterization and bio-evaluation of core-shell QDs with ZnSe, CdS and CdSe combinations
KR101627306B1 (ko) 연속흐름반응기를 포함하는 나노결정 제조 장치 및 이를 이용한 CuInS2/ZnS 나노결정의 제조방법
Liu et al. Synthesis of CdTe QDs by hydrothermal method, with tunable emission fluorescence
Si et al. Synthesis of PbS nanocrystals from sulfur–amine solutions at room temperature
CN105462577A (zh) 一种氧化锌-氧化镁核壳结构量子点及其制备方法