CA2883045A1 - Method for producing core/shell nanoparticles and core/shell nanoparticles - Google Patents
Method for producing core/shell nanoparticles and core/shell nanoparticles Download PDFInfo
- Publication number
- CA2883045A1 CA2883045A1 CA2883045A CA2883045A CA2883045A1 CA 2883045 A1 CA2883045 A1 CA 2883045A1 CA 2883045 A CA2883045 A CA 2883045A CA 2883045 A CA2883045 A CA 2883045A CA 2883045 A1 CA2883045 A1 CA 2883045A1
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- CA
- Canada
- Prior art keywords
- shell
- core
- nanoparticles
- tubular reactor
- starting materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
- B01J13/02—Making microcapsules or microballoons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/24—Stationary reactors without moving elements inside
- B01J19/2475—Membrane reactors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
- C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
- C23C10/24—Salt bath containing the element to be diffused
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00049—Controlling or regulating processes
- B01J2219/00051—Controlling the temperature
- B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
- B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
- B01J2219/00099—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor the reactor being immersed in the heat exchange medium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/892—Liquid phase deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Luminescent Compositions (AREA)
- Manufacturing Of Micro-Capsules (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Glanulating (AREA)
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| DE102012215421.3A DE102012215421B4 (de) | 2012-08-30 | 2012-08-30 | Verfahren zur Herstellung von Kern/Schale-Nanopartikeln |
| DE102012215421.3 | 2012-08-30 | ||
| PCT/EP2013/067898 WO2014033213A2 (de) | 2012-08-30 | 2013-08-29 | Verfahren zur herstellung von kern/schale-nanopartikeln und kern-schale-nanopartikel |
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| CA2883045A1 true CA2883045A1 (en) | 2014-03-06 |
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| CA2883045A Abandoned CA2883045A1 (en) | 2012-08-30 | 2013-08-29 | Method for producing core/shell nanoparticles and core/shell nanoparticles |
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| CN114538369A (zh) * | 2015-12-31 | 2022-05-27 | 陶氏环球技术有限责任公司 | 纳米结构材料的连续流动合成 |
| CN106010499B (zh) * | 2016-05-18 | 2020-06-12 | 浙江大学 | 核壳量子点的表面优化方法 |
| DE102016117189A1 (de) | 2016-09-13 | 2018-03-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| CN108264900A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点复合材料、制备方法及半导体器件 |
| CN108269933A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种反置底发射qled器件及其制备方法 |
| CN108267888A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点背光模组、显示装置和电子设备 |
| CN108269928A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种正置底发射qled器件及其制备方法 |
| CN108264904A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种发光材料、制备方法及半导体器件 |
| CN108269929B (zh) * | 2016-12-30 | 2022-06-24 | Tcl科技集团股份有限公司 | 一种正置顶发射qled器件及其制备方法 |
| CN108267806A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点彩色滤光片、液晶显示面板及液晶显示装置 |
| CN108269923A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点探测器及其制备方法 |
| CN108264894A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种纳米发光材料、制备方法及半导体器件 |
| CN108269891B (zh) * | 2016-12-30 | 2021-05-18 | Tcl科技集团股份有限公司 | 一种纳米复合材料、制备方法及半导体器件 |
| CN108269934A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种纳米材料、制备方法及半导体器件 |
| CN108264901B (zh) * | 2016-12-30 | 2022-08-05 | Tcl科技集团股份有限公司 | 具有漏斗型能级结构的发光材料、制备方法及半导体器件 |
| CN108269886B (zh) * | 2016-12-30 | 2019-12-10 | Tcl集团股份有限公司 | 一种量子点材料、制备方法及半导体器件 |
| CN108269935A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点薄膜及其制备方法 |
| CN108269930B (zh) | 2016-12-30 | 2020-05-26 | Tcl科技集团股份有限公司 | 一种合金纳米材料、制备方法及半导体器件 |
| CN108264905A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点材料、制备方法及半导体器件 |
| CN108281494A (zh) * | 2016-12-30 | 2018-07-13 | Tcl集团股份有限公司 | 一种量子点光伏器件及制备方法 |
| CN108264903A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点照明模组及照明设备 |
| CN108269927A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种反置顶发射qled器件及其制备方法 |
| CN108269926A (zh) * | 2016-12-30 | 2018-07-10 | Tcl集团股份有限公司 | 一种量子点组成及其制备方法 |
| CN108269892B (zh) * | 2016-12-30 | 2021-06-22 | Tcl科技集团股份有限公司 | 具有量子阱能级结构的合金材料、制备方法及半导体器件 |
| US10096743B1 (en) * | 2017-05-26 | 2018-10-09 | Unique Materials Co., Ltd. | Gigantic quantum dots |
| US11139422B2 (en) | 2017-06-07 | 2021-10-05 | Sumitomo Electric Industries. Ltd. | Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor |
| CN112011327A (zh) * | 2019-05-28 | 2020-12-01 | 苏州星烁纳米科技有限公司 | 核壳结构量子点的制备方法及由其制备的产品 |
| US10923348B2 (en) | 2019-05-29 | 2021-02-16 | International Business Machines Corporation | Gate-all-around field effect transistor using template-assisted-slective-epitaxy |
| CN113509899B (zh) * | 2020-04-10 | 2024-08-20 | 百剂博递医药科技(上海)有限公司 | 反应装置、微球制备装置及萃取方法、及脂质体载药方法 |
| DE102020216283A1 (de) | 2020-12-18 | 2022-06-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Spektrometer |
| CN114507526B (zh) * | 2022-03-10 | 2023-07-28 | 河南大学 | 一种硒元素贯穿的核壳结构量子点及其制备方法 |
| CN116314886A (zh) * | 2023-03-11 | 2023-06-23 | 中自环保科技股份有限公司 | 一种核壳纳米催化剂的制备方法 |
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| US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
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| US20020083888A1 (en) | 2000-12-28 | 2002-07-04 | Zehnder Donald A. | Flow synthesis of quantum dot nanocrystals |
| DE10131173C2 (de) | 2001-06-29 | 2003-12-04 | Itn Nanovation Gmbh | Verfahren zur Herstellung von Kern-Hülle-Teilchen und deren Verwendung |
| ATE556845T1 (de) | 2001-07-20 | 2012-05-15 | Life Technologies Corp | Lumineszierende nanopartikel und ihre herstellung |
| DE10138970A1 (de) | 2001-08-08 | 2003-02-20 | Bayer Ag | Rohrreaktor auf Basis eines Schichtstoffes |
| US20050129580A1 (en) | 2003-02-26 | 2005-06-16 | Swinehart Philip R. | Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles |
| JP4528927B2 (ja) | 2003-09-04 | 2010-08-25 | 独立行政法人産業技術総合研究所 | 複合微粒子の製造方法および複合微粒子の製造装置、並びに複合微粒子 |
| EP1688169A4 (en) | 2003-11-28 | 2008-10-01 | Mitsubishi Chem Corp | PROCESS FOR PRODUCING FINE PARTICLES OF AN ORGANIC COMPOUND |
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| KR100817853B1 (ko) | 2006-09-25 | 2008-03-31 | 재단법인서울대학교산학협력재단 | 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법 |
| JP5151993B2 (ja) * | 2007-01-22 | 2013-02-27 | コニカミノルタエムジー株式会社 | コア／シェル型半導体ナノ粒子とその製造方法 |
| JP2010535692A (ja) * | 2007-08-06 | 2010-11-25 | エージェンシー フォー サイエンス，テクノロジー アンド リサーチ | カドミウムおよびセレン含有ナノ結晶複合材料を形成する方法ならびに該方法から得られるナノ結晶複合材料 |
| GB2454902B (en) | 2007-11-22 | 2012-12-05 | Ct Fa R Angewandte Nanotechnologie Can Gmbh | A method for the manufacture of III-V particles |
| GB2457314A (en) * | 2008-02-11 | 2009-08-12 | Ct Angewandte Nanotech Can | Apparatus and method for the manufacture of nanoparticles |
| JP5744468B2 (ja) * | 2010-10-20 | 2015-07-08 | シャープ株式会社 | 半導体ナノ粒子蛍光体 |
| US8920766B2 (en) * | 2012-08-21 | 2014-12-30 | University Of Rochester | Quantum nanostructures, compositions thereof, and methods of making and using same |
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Also Published As
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| EP2890485A2 (de) | 2015-07-08 |
| CN104736234B (zh) | 2017-07-14 |
| ES2891648T3 (es) | 2022-01-28 |
| US20150214433A1 (en) | 2015-07-30 |
| JP2015533630A (ja) | 2015-11-26 |
| KR102141505B1 (ko) | 2020-08-05 |
| JP6410107B2 (ja) | 2018-10-24 |
| KR20150079572A (ko) | 2015-07-08 |
| EP2890485B1 (de) | 2021-06-02 |
| US10147846B2 (en) | 2018-12-04 |
| CN104736234A (zh) | 2015-06-24 |
| DE102012215421B4 (de) | 2019-08-29 |
| WO2014033213A3 (de) | 2014-05-08 |
| WO2014033213A2 (de) | 2014-03-06 |
| DE102012215421A1 (de) | 2014-03-06 |
| US20190165211A1 (en) | 2019-05-30 |
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