CA2883045A1 - Method for producing core/shell nanoparticles and core/shell nanoparticles - Google Patents

Method for producing core/shell nanoparticles and core/shell nanoparticles Download PDF

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Publication number
CA2883045A1
CA2883045A1 CA2883045A CA2883045A CA2883045A1 CA 2883045 A1 CA2883045 A1 CA 2883045A1 CA 2883045 A CA2883045 A CA 2883045A CA 2883045 A CA2883045 A CA 2883045A CA 2883045 A1 CA2883045 A1 CA 2883045A1
Authority
CA
Canada
Prior art keywords
shell
core
nanoparticles
tubular reactor
starting materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2883045A
Other languages
English (en)
French (fr)
Inventor
Van Huong Schmidtke-Tran
Steffen Jan Niehaus
Horst Weller
Daniel Ness
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrum fuer Angewandte Nanotechnologie CAN GmbH
Original Assignee
Centrum fuer Angewandte Nanotechnologie CAN GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrum fuer Angewandte Nanotechnologie CAN GmbH filed Critical Centrum fuer Angewandte Nanotechnologie CAN GmbH
Publication of CA2883045A1 publication Critical patent/CA2883045A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/02—Making microcapsules or microballoons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2475—Membrane reactors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/24—Salt bath containing the element to be diffused
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00099—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor the reactor being immersed in the heat exchange medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Luminescent Compositions (AREA)
  • Manufacturing Of Micro-Capsules (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Glanulating (AREA)
CA2883045A 2012-08-30 2013-08-29 Method for producing core/shell nanoparticles and core/shell nanoparticles Abandoned CA2883045A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012215421.3A DE102012215421B4 (de) 2012-08-30 2012-08-30 Verfahren zur Herstellung von Kern/Schale-Nanopartikeln
DE102012215421.3 2012-08-30
PCT/EP2013/067898 WO2014033213A2 (de) 2012-08-30 2013-08-29 Verfahren zur herstellung von kern/schale-nanopartikeln und kern-schale-nanopartikel

Publications (1)

Publication Number Publication Date
CA2883045A1 true CA2883045A1 (en) 2014-03-06

Family

ID=49036597

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2883045A Abandoned CA2883045A1 (en) 2012-08-30 2013-08-29 Method for producing core/shell nanoparticles and core/shell nanoparticles

Country Status (9)

Country Link
US (2) US10147846B2 (enExample)
EP (1) EP2890485B1 (enExample)
JP (1) JP6410107B2 (enExample)
KR (1) KR102141505B1 (enExample)
CN (1) CN104736234B (enExample)
CA (1) CA2883045A1 (enExample)
DE (1) DE102012215421B4 (enExample)
ES (1) ES2891648T3 (enExample)
WO (1) WO2014033213A2 (enExample)

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CN108269929B (zh) * 2016-12-30 2022-06-24 Tcl科技集团股份有限公司 一种正置顶发射qled器件及其制备方法
CN108269923A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点探测器及其制备方法
CN108267888A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点背光模组、显示装置和电子设备
CN108269935A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点薄膜及其制备方法
CN108281494A (zh) * 2016-12-30 2018-07-13 Tcl集团股份有限公司 一种量子点光伏器件及制备方法
CN108264904A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种发光材料、制备方法及半导体器件
CN108269926A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点组成及其制备方法
CN108269892B (zh) * 2016-12-30 2021-06-22 Tcl科技集团股份有限公司 具有量子阱能级结构的合金材料、制备方法及半导体器件
CN108267806A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点彩色滤光片、液晶显示面板及液晶显示装置
CN108264894A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米发光材料、制备方法及半导体器件
CN108264901B (zh) * 2016-12-30 2022-08-05 Tcl科技集团股份有限公司 具有漏斗型能级结构的发光材料、制备方法及半导体器件
CN108269930B (zh) 2016-12-30 2020-05-26 Tcl科技集团股份有限公司 一种合金纳米材料、制备方法及半导体器件
CN108264900A (zh) 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
CN108269933A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置底发射qled器件及其制备方法
CN108269891B (zh) * 2016-12-30 2021-05-18 Tcl科技集团股份有限公司 一种纳米复合材料、制备方法及半导体器件
CN108264905A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108269934A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米材料、制备方法及半导体器件
US10096743B1 (en) * 2017-05-26 2018-10-09 Unique Materials Co., Ltd. Gigantic quantum dots
JP6954348B2 (ja) 2017-06-07 2021-10-27 住友電気工業株式会社 熱電変換材料、熱電変換素子、熱電変換モジュール、および光センサ
CN112011327A (zh) * 2019-05-28 2020-12-01 苏州星烁纳米科技有限公司 核壳结构量子点的制备方法及由其制备的产品
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CN113509899B (zh) * 2020-04-10 2024-08-20 百剂博递医药科技(上海)有限公司 反应装置、微球制备装置及萃取方法、及脂质体载药方法
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Also Published As

Publication number Publication date
US20150214433A1 (en) 2015-07-30
EP2890485B1 (de) 2021-06-02
CN104736234A (zh) 2015-06-24
WO2014033213A3 (de) 2014-05-08
EP2890485A2 (de) 2015-07-08
DE102012215421A1 (de) 2014-03-06
US10147846B2 (en) 2018-12-04
US20190165211A1 (en) 2019-05-30
KR102141505B1 (ko) 2020-08-05
KR20150079572A (ko) 2015-07-08
CN104736234B (zh) 2017-07-14
ES2891648T3 (es) 2022-01-28
JP2015533630A (ja) 2015-11-26
DE102012215421B4 (de) 2019-08-29
JP6410107B2 (ja) 2018-10-24
WO2014033213A2 (de) 2014-03-06

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