CN104736234B - 核‑壳纳米颗粒的制备方法和核‑壳纳米颗粒 - Google Patents

核‑壳纳米颗粒的制备方法和核‑壳纳米颗粒 Download PDF

Info

Publication number
CN104736234B
CN104736234B CN201380056181.3A CN201380056181A CN104736234B CN 104736234 B CN104736234 B CN 104736234B CN 201380056181 A CN201380056181 A CN 201380056181A CN 104736234 B CN104736234 B CN 104736234B
Authority
CN
China
Prior art keywords
shell
core
nanoparticles
tubular reactor
reaction zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380056181.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN104736234A (zh
Inventor
范胡·施米特克德兰
范胡·施米特克一德兰
斯特芬·扬·尼豪斯
霍斯特·韦勒
丹尼尔·内斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrum fuer Angewandte Nanotechnologie CAN GmbH
Original Assignee
Centrum fuer Angewandte Nanotechnologie CAN GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrum fuer Angewandte Nanotechnologie CAN GmbH filed Critical Centrum fuer Angewandte Nanotechnologie CAN GmbH
Publication of CN104736234A publication Critical patent/CN104736234A/zh
Application granted granted Critical
Publication of CN104736234B publication Critical patent/CN104736234B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J13/00—Colloid chemistry, e.g. the production of colloidal materials or their solutions, not otherwise provided for; Making microcapsules or microballoons
    • B01J13/02—Making microcapsules or microballoons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/2475—Membrane reactors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/18—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions
    • C23C10/20—Solid state diffusion of only metal elements or silicon into metallic material surfaces using liquids, e.g. salt baths, liquid suspensions only one element being diffused
    • C23C10/24—Salt bath containing the element to be diffused
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00049—Controlling or regulating processes
    • B01J2219/00051—Controlling the temperature
    • B01J2219/00074—Controlling the temperature by indirect heating or cooling employing heat exchange fluids
    • B01J2219/00087—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor
    • B01J2219/00099—Controlling the temperature by indirect heating or cooling employing heat exchange fluids with heat exchange elements outside the reactor the reactor being immersed in the heat exchange medium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Luminescent Compositions (AREA)
  • Manufacturing Of Micro-Capsules (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Glanulating (AREA)
CN201380056181.3A 2012-08-30 2013-08-29 核‑壳纳米颗粒的制备方法和核‑壳纳米颗粒 Active CN104736234B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012215421.3A DE102012215421B4 (de) 2012-08-30 2012-08-30 Verfahren zur Herstellung von Kern/Schale-Nanopartikeln
DE102012215421.3 2012-08-30
PCT/EP2013/067898 WO2014033213A2 (de) 2012-08-30 2013-08-29 Verfahren zur herstellung von kern/schale-nanopartikeln und kern-schale-nanopartikel

Publications (2)

Publication Number Publication Date
CN104736234A CN104736234A (zh) 2015-06-24
CN104736234B true CN104736234B (zh) 2017-07-14

Family

ID=49036597

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380056181.3A Active CN104736234B (zh) 2012-08-30 2013-08-29 核‑壳纳米颗粒的制备方法和核‑壳纳米颗粒

Country Status (9)

Country Link
US (2) US10147846B2 (enExample)
EP (1) EP2890485B1 (enExample)
JP (1) JP6410107B2 (enExample)
KR (1) KR102141505B1 (enExample)
CN (1) CN104736234B (enExample)
CA (1) CA2883045A1 (enExample)
DE (1) DE102012215421B4 (enExample)
ES (1) ES2891648T3 (enExample)
WO (1) WO2014033213A2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114538369A (zh) * 2015-12-31 2022-05-27 陶氏环球技术有限责任公司 纳米结构材料的连续流动合成
CN106010499B (zh) * 2016-05-18 2020-06-12 浙江大学 核壳量子点的表面优化方法
DE102016117189A1 (de) 2016-09-13 2018-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN108264900A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点复合材料、制备方法及半导体器件
CN108269933A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置底发射qled器件及其制备方法
CN108267888A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点背光模组、显示装置和电子设备
CN108269928A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种正置底发射qled器件及其制备方法
CN108264904A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种发光材料、制备方法及半导体器件
CN108269929B (zh) * 2016-12-30 2022-06-24 Tcl科技集团股份有限公司 一种正置顶发射qled器件及其制备方法
CN108267806A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点彩色滤光片、液晶显示面板及液晶显示装置
CN108269923A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点探测器及其制备方法
CN108264894A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米发光材料、制备方法及半导体器件
CN108269891B (zh) * 2016-12-30 2021-05-18 Tcl科技集团股份有限公司 一种纳米复合材料、制备方法及半导体器件
CN108269934A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种纳米材料、制备方法及半导体器件
CN108264901B (zh) * 2016-12-30 2022-08-05 Tcl科技集团股份有限公司 具有漏斗型能级结构的发光材料、制备方法及半导体器件
CN108269886B (zh) * 2016-12-30 2019-12-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108269935A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点薄膜及其制备方法
CN108269930B (zh) 2016-12-30 2020-05-26 Tcl科技集团股份有限公司 一种合金纳米材料、制备方法及半导体器件
CN108264905A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点材料、制备方法及半导体器件
CN108281494A (zh) * 2016-12-30 2018-07-13 Tcl集团股份有限公司 一种量子点光伏器件及制备方法
CN108264903A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点照明模组及照明设备
CN108269927A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种反置顶发射qled器件及其制备方法
CN108269926A (zh) * 2016-12-30 2018-07-10 Tcl集团股份有限公司 一种量子点组成及其制备方法
CN108269892B (zh) * 2016-12-30 2021-06-22 Tcl科技集团股份有限公司 具有量子阱能级结构的合金材料、制备方法及半导体器件
US10096743B1 (en) * 2017-05-26 2018-10-09 Unique Materials Co., Ltd. Gigantic quantum dots
US11139422B2 (en) 2017-06-07 2021-10-05 Sumitomo Electric Industries. Ltd. Thermoelectric conversion material, thermoelectric conversion element, thermoelectric conversion module and optical sensor
CN112011327A (zh) * 2019-05-28 2020-12-01 苏州星烁纳米科技有限公司 核壳结构量子点的制备方法及由其制备的产品
US10923348B2 (en) 2019-05-29 2021-02-16 International Business Machines Corporation Gate-all-around field effect transistor using template-assisted-slective-epitaxy
CN113509899B (zh) * 2020-04-10 2024-08-20 百剂博递医药科技(上海)有限公司 反应装置、微球制备装置及萃取方法、及脂质体载药方法
DE102020216283A1 (de) 2020-12-18 2022-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Spektrometer
CN114507526B (zh) * 2022-03-10 2023-07-28 河南大学 一种硒元素贯穿的核壳结构量子点及其制备方法
CN116314886A (zh) * 2023-03-11 2023-06-23 中自环保科技股份有限公司 一种核壳纳米催化剂的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017264A1 (en) * 2001-07-20 2003-01-23 Treadway Joseph A. Luminescent nanoparticles and methods for their preparation
US20030103879A1 (en) * 2001-08-08 2003-06-05 Peter Jahn Tube reactor based on a laminate
US20050129580A1 (en) * 2003-02-26 2005-06-16 Swinehart Philip R. Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO132685C (enExample) 1974-03-19 1977-05-24 Norsk Hydro As
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6562937B2 (en) 2000-07-25 2003-05-13 General Electric Company Continuous preparation of polycarbonate
US20020083888A1 (en) 2000-12-28 2002-07-04 Zehnder Donald A. Flow synthesis of quantum dot nanocrystals
DE10131173C2 (de) 2001-06-29 2003-12-04 Itn Nanovation Gmbh Verfahren zur Herstellung von Kern-Hülle-Teilchen und deren Verwendung
JP4528927B2 (ja) 2003-09-04 2010-08-25 独立行政法人産業技術総合研究所 複合微粒子の製造方法および複合微粒子の製造装置、並びに複合微粒子
EP1688169A4 (en) 2003-11-28 2008-10-01 Mitsubishi Chem Corp PROCESS FOR PRODUCING FINE PARTICLES OF AN ORGANIC COMPOUND
JP2005177746A (ja) 2003-11-28 2005-07-07 Mitsubishi Chemicals Corp 有機化合物微粒子の製造方法
US8454927B2 (en) 2004-08-04 2013-06-04 Crystalplex Corporation Alloyed semiconductor nanocrystals
EP1812335A4 (en) * 2004-11-19 2009-07-01 Agency Science Tech & Res PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS
GB2429838B (en) * 2005-08-12 2011-03-09 Nanoco Technologies Ltd Nanoparticles
EP1978072A4 (en) * 2006-01-27 2009-04-08 Konica Minolta Med & Graphic SEMICONDUCTOR PROOF WITH CORE / COVER STRUCTURE AND METHOD OF MANUFACTURING THEREOF
KR100817853B1 (ko) 2006-09-25 2008-03-31 재단법인서울대학교산학협력재단 점진적 농도구배 껍질 구조를 갖는 양자점 및 이의 제조방법
JP5151993B2 (ja) * 2007-01-22 2013-02-27 コニカミノルタエムジー株式会社 コア／シェル型半導体ナノ粒子とその製造方法
JP2010535692A (ja) * 2007-08-06 2010-11-25 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ カドミウムおよびセレン含有ナノ結晶複合材料を形成する方法ならびに該方法から得られるナノ結晶複合材料
GB2454902B (en) 2007-11-22 2012-12-05 Ct Fa R Angewandte Nanotechnologie Can Gmbh A method for the manufacture of III-V particles
GB2457314A (en) * 2008-02-11 2009-08-12 Ct Angewandte Nanotech Can Apparatus and method for the manufacture of nanoparticles
JP5744468B2 (ja) * 2010-10-20 2015-07-08 シャープ株式会社 半導体ナノ粒子蛍光体
US8920766B2 (en) * 2012-08-21 2014-12-30 University Of Rochester Quantum nanostructures, compositions thereof, and methods of making and using same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030017264A1 (en) * 2001-07-20 2003-01-23 Treadway Joseph A. Luminescent nanoparticles and methods for their preparation
US20030103879A1 (en) * 2001-08-08 2003-06-05 Peter Jahn Tube reactor based on a laminate
US20050129580A1 (en) * 2003-02-26 2005-06-16 Swinehart Philip R. Microfluidic chemical reactor for the manufacture of chemically-produced nanoparticles

Also Published As

Publication number Publication date
EP2890485A2 (de) 2015-07-08
ES2891648T3 (es) 2022-01-28
US20150214433A1 (en) 2015-07-30
JP2015533630A (ja) 2015-11-26
KR102141505B1 (ko) 2020-08-05
JP6410107B2 (ja) 2018-10-24
KR20150079572A (ko) 2015-07-08
EP2890485B1 (de) 2021-06-02
US10147846B2 (en) 2018-12-04
CN104736234A (zh) 2015-06-24
DE102012215421B4 (de) 2019-08-29
WO2014033213A3 (de) 2014-05-08
WO2014033213A2 (de) 2014-03-06
DE102012215421A1 (de) 2014-03-06
US20190165211A1 (en) 2019-05-30
CA2883045A1 (en) 2014-03-06

Similar Documents

Publication Publication Date Title
CN104736234B (zh) 核‑壳纳米颗粒的制备方法和核‑壳纳米颗粒
EP3458545B1 (en) Method to improve the morphology of core/shell quantum dots for highly luminescent nanostructures
EP3448957B1 (en) Stable inp quantum dots with thick shell coating and method of producing the same
US10000862B2 (en) Method of making quantum dots
US9850593B2 (en) Method of making quantum dots
US9577149B2 (en) Continuous synthesis of high quantum yield InP/ZnS nanocrystals
US10174243B2 (en) Highly luminescent semiconductor nanocrystals
CN109312489A (zh) 在高温下合成核壳纳米晶体的方法
Abdelhady et al. Flow reactor synthesis of CdSe, CdS, CdSe/CdS and CdSeS nanoparticles from single molecular precursor (s)
WO2007147055A2 (en) Method of preparing semiconductor nanocrystal compositions
WO2013028253A1 (en) Semiconductor nanocrystals and methods
CN111556850A (zh) 半导体纳米粒子和芯/壳型半导体纳米粒子
US8562939B2 (en) Semiconductor nanocrystal synthesis using a catalyst assisted two-phase reaction
KR20180106657A (ko) 양자점의 연속흐름 제조방법 및 양자점 연속흐름 제조장치
US9951272B2 (en) Method of making semiconductor nanocrystals
US20150252257A1 (en) Highly luminescent semiconductor nanocrystals
CN111566045B (zh) 半导体纳米粒子、半导体纳米粒子分散液和光学部件
WO2013058900A1 (en) Highly-confined semiconductor nanocrystals
KR101627306B1 (ko) 연속흐름반응기를 포함하는 나노결정 제조 장치 및 이를 이용한 CuInS2/ZnS 나노결정의 제조방법
KR102492563B1 (ko) 양자점의 연속흐름 제조방법 및 양자점 연속흐름 제조장치
Savchuk et al. CdTe quantum dots precipitation of monodisperse fractions from colloid solutions

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C53 Correction of patent of invention or patent application
CB03 Change of inventor or designer information

Inventor after: Vanhu Schmidtke I

Inventor after: Si Tefenyang Jutta Niehaus

Inventor after: Philip Hurst Wei Le

Inventor after: In Denier this

Inventor before: Model Hu Delan

Inventor before: Si Tefenyang Jutta Niehaus

Inventor before: Philip Hurst Wei Le

Inventor before: In Denier this

COR Change of bibliographic data

Free format text: CORRECT: INVENTOR; FROM: VANHOOL TRAN NIEHAUS STEFFEN JAN WELLER HORST NESS DANIEL TO: VANHOOL SCHMIDTKE-TRAN NIEHAUS STEFFEN JAN WELLER HORST NESS DANIEL

EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant