ES278464U - Elemento componente semi-conductor de potencia. - Google Patents

Elemento componente semi-conductor de potencia.

Info

Publication number
ES278464U
ES278464U ES1984278464U ES278464U ES278464U ES 278464 U ES278464 U ES 278464U ES 1984278464 U ES1984278464 U ES 1984278464U ES 278464 U ES278464 U ES 278464U ES 278464 U ES278464 U ES 278464U
Authority
ES
Spain
Prior art keywords
component
layer
maximum thickness
surface area
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES1984278464U
Other languages
English (en)
Other versions
ES278464Y (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of ES278464U publication Critical patent/ES278464U/es
Application granted granted Critical
Publication of ES278464Y publication Critical patent/ES278464Y/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

1.Elemento componente semi-conductor de potencia, del tipo que comprende al menos tres capas sucesivas apiladas, llegando las dos primeras capas ( 3,4) hasta una primera superficie del elemento componente, estando muy dopada la primera capa (3), estando previstos un primer plano de contacto (1)y un segundo plano de contacto (2), subdividido en secciones para el contactado de la primera capa (3) y de la segunda capa (4), que imprimen a la primera superficie del elemeto componente una estructura escalonada, caracterizado porque la primera capa (3) presenta un espesor máximo de 8{mi}m, estando poco dopado la segunda capa (4) y teniendo un espesor máximo de 40 {mi}m, teniendo los escalones una altura comprendida entre 10 {mi}m y 20{mi}m y una anchura comprendida entre 20 {mi}m y 300 {mi}m; y ascendiendo la relación entre la superficie del primer plano de contacto (1) y la superficie del segundo plano de contacto (2) entre uno y cuatro. 2. Elemento componente semi-conductor de potencia, según lareivindicación 1, caracterizado porque presenta en la superficie del segundo plano de contacto (2) una cuarta capa (6) con un tipo de conductividad opuesto al de la primera capa (3). 3. Elementos componenetes semi-conductores de potencia, según la reivindicación 1, carcaterizado porque la primera capa (3) presenta un dopado de 5 x 10 elvado a 20 a 5 x 10 elevado a 18 átomos/cm al cubo y la segunda capa (4) presenta un dopta de 5 x 10 elevado a 14 a 5 x átomos/cm al cubo. 4. Elementos componente semi-conductor de potencia.
ES1984278464U 1983-03-31 1984-03-28 Elemento componente semi-conductor de potencia. Expired ES278464Y (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH179383 1983-03-31

Publications (2)

Publication Number Publication Date
ES278464U true ES278464U (es) 1984-09-16
ES278464Y ES278464Y (es) 1985-04-01

Family

ID=4218726

Family Applications (1)

Application Number Title Priority Date Filing Date
ES1984278464U Expired ES278464Y (es) 1983-03-31 1984-03-28 Elemento componente semi-conductor de potencia.

Country Status (5)

Country Link
US (1) US4596999A (es)
EP (1) EP0121068B1 (es)
JP (1) JPS59184565A (es)
DE (1) DE3468787D1 (es)
ES (1) ES278464Y (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178387B1 (de) * 1984-10-19 1992-10-07 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement
CH670528A5 (es) * 1986-03-20 1989-06-15 Bbc Brown Boveri & Cie
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
CH670333A5 (es) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
CH670173A5 (es) * 1986-06-03 1989-05-12 Bbc Brown Boveri & Cie
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
CH670334A5 (es) * 1986-09-16 1989-05-31 Bbc Brown Boveri & Cie
EP0262485A1 (de) * 1986-10-01 1988-04-06 BBC Brown Boveri AG Halbleiterbauelement mit einer Ätzgrube
SE8704121D0 (sv) * 1987-10-23 1987-10-23 Linkopings Silicon Constructio Transistor
EP0317802A1 (de) * 1987-11-25 1989-05-31 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung
JPH01225360A (ja) * 1988-03-04 1989-09-08 Fuji Electric Co Ltd ゲートターンオフサイリスタ
US5032893A (en) * 1988-04-01 1991-07-16 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers
JPH0267764A (ja) * 1988-09-02 1990-03-07 Hitachi Ltd ゲートターンオフサイリスタ
EP0499707B1 (de) * 1991-02-22 1996-04-03 Asea Brown Boveri Ag Abschaltbares Hochleistungs-Halbleiterbauelement
EP0696066A3 (en) * 1994-06-30 1998-06-24 Hitachi, Ltd. Semiconductor switching device and power converter
US6034417A (en) 1998-05-08 2000-03-07 Micron Technology, Inc. Semiconductor structure having more usable substrate area and method for forming same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
JPS53110386A (en) * 1977-03-08 1978-09-27 Toshiba Corp Semiconductor device
JPS5941568B2 (ja) * 1977-06-02 1984-10-08 株式会社リコー 回転制御装置
JPS603791B2 (ja) * 1978-04-13 1985-01-30 株式会社東芝 メサ型ゲ−トタ−ンオフサイリスタ
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS56124238A (en) * 1980-03-05 1981-09-29 Hitachi Ltd Semiconductor device
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
EP0064613B1 (en) * 1981-04-30 1986-10-29 Kabushiki Kaisha Toshiba Semiconductor device having a plurality of element units operable in parallel
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device

Also Published As

Publication number Publication date
DE3468787D1 (en) 1988-02-18
US4596999A (en) 1986-06-24
EP0121068A1 (de) 1984-10-10
JPS59184565A (ja) 1984-10-19
EP0121068B1 (de) 1988-01-13
ES278464Y (es) 1985-04-01

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Legal Events

Date Code Title Description
FD1K Utility model lapsed

Effective date: 19980401