ES2774377T3 - Procedimiento y dispositivo de mecanización basada en láser de sustratos cristalinos planos, especialmente sustratos semiconductores - Google Patents
Procedimiento y dispositivo de mecanización basada en láser de sustratos cristalinos planos, especialmente sustratos semiconductores Download PDFInfo
- Publication number
- ES2774377T3 ES2774377T3 ES15739207T ES15739207T ES2774377T3 ES 2774377 T3 ES2774377 T3 ES 2774377T3 ES 15739207 T ES15739207 T ES 15739207T ES 15739207 T ES15739207 T ES 15739207T ES 2774377 T3 ES2774377 T3 ES 2774377T3
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- substrate
- laser beam
- laser
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- 239000000758 substrate Substances 0.000 title claims abstract description 239
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000003754 machining Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 230000003287 optical effect Effects 0.000 claims abstract description 112
- 239000000463 material Substances 0.000 claims abstract description 89
- 238000010521 absorption reaction Methods 0.000 claims abstract description 49
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 36
- 238000005755 formation reaction Methods 0.000 claims abstract description 36
- 230000003993 interaction Effects 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000002679 ablation Methods 0.000 claims description 5
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 230000008646 thermal stress Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000009102 absorption Effects 0.000 description 36
- 238000005520 cutting process Methods 0.000 description 11
- 125000001475 halogen functional group Chemical group 0.000 description 11
- 230000005855 radiation Effects 0.000 description 8
- 230000004075 alteration Effects 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- XIMIGUBYDJDCKI-UHFFFAOYSA-N diselenium Chemical compound [Se]=[Se] XIMIGUBYDJDCKI-UHFFFAOYSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0652—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014213775.6A DE102014213775B4 (de) | 2014-07-15 | 2014-07-15 | Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen, kristallinen Substraten, insbesondere von Halbleitersubstraten |
| PCT/EP2015/065476 WO2016008768A1 (de) | 2014-07-15 | 2015-07-07 | Verfahren und vorrichtung zum laserbasierten bearbeiten von flächigen, kristallinen substraten, insbesondere von halbleitersubstraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2774377T3 true ES2774377T3 (es) | 2020-07-20 |
Family
ID=53682658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES15739207T Active ES2774377T3 (es) | 2014-07-15 | 2015-07-07 | Procedimiento y dispositivo de mecanización basada en láser de sustratos cristalinos planos, especialmente sustratos semiconductores |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US10821555B2 (enExample) |
| EP (1) | EP3169475B1 (enExample) |
| JP (1) | JP6804441B2 (enExample) |
| KR (1) | KR102318041B1 (enExample) |
| CN (1) | CN107073655B (enExample) |
| DE (1) | DE102014213775B4 (enExample) |
| ES (1) | ES2774377T3 (enExample) |
| LT (1) | LT3169475T (enExample) |
| PT (1) | PT3169475T (enExample) |
| TW (1) | TWI688444B (enExample) |
| WO (1) | WO2016008768A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2754524B1 (de) | 2013-01-15 | 2015-11-25 | Corning Laser Technologies GmbH | Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie |
| EP2781296B1 (de) | 2013-03-21 | 2020-10-21 | Corning Laser Technologies GmbH | Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser |
| US9517963B2 (en) | 2013-12-17 | 2016-12-13 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
| US11556039B2 (en) | 2013-12-17 | 2023-01-17 | Corning Incorporated | Electrochromic coated glass articles and methods for laser processing the same |
| CN106687419A (zh) | 2014-07-08 | 2017-05-17 | 康宁股份有限公司 | 用于激光处理材料的方法和设备 |
| US11648623B2 (en) | 2014-07-14 | 2023-05-16 | Corning Incorporated | Systems and methods for processing transparent materials using adjustable laser beam focal lines |
| HUE055461T2 (hu) | 2015-03-24 | 2021-11-29 | Corning Inc | Kijelzõ üveg kompozíciók lézeres vágása és feldolgozása |
| EP3319911B1 (en) | 2015-07-10 | 2023-04-19 | Corning Incorporated | Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same |
| JP6755707B2 (ja) * | 2016-05-12 | 2020-09-16 | 株式会社ディスコ | レーザー加工装置 |
| LT3311947T (lt) | 2016-09-30 | 2019-12-27 | Corning Incorporated | Skaidrių ruošinių lazerinio apdirbimo, naudojant spindulių pluošto dėmes be simetrijos ašių, būdas |
| CN109803786B (zh) | 2016-09-30 | 2021-05-07 | 康宁股份有限公司 | 使用非轴对称束斑对透明工件进行激光加工的设备和方法 |
| US11542190B2 (en) | 2016-10-24 | 2023-01-03 | Corning Incorporated | Substrate processing station for laser-based machining of sheet-like glass substrates |
| DE102017206461B4 (de) | 2017-04-13 | 2019-05-02 | Schott Ag | Vorrichtung und Verfahren zum laserbasierten Trennen eines transparenten, sprödbrechenden Werkstücks |
| DE102018201596A1 (de) * | 2018-02-02 | 2019-08-08 | Forschungsverbund Berlin E.V. | Verfahren und Vorrichtung zur direkten Strukturierung mittels Laserstrahlung |
| KR102797419B1 (ko) | 2019-11-25 | 2025-04-21 | 삼성전자주식회사 | 기판 다이싱 방법, 반도체 소자의 제조 방법 및 그들에 의해 제조되는 반도체 칩 |
| JP7564719B2 (ja) * | 2021-01-28 | 2024-10-09 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
| WO2022185096A1 (en) | 2021-03-03 | 2022-09-09 | Uab Altechna R&B | Laser beam transforming element |
| KR20240007769A (ko) * | 2021-06-02 | 2024-01-16 | 트룸프 레이저-운트 시스템테크닉 게엠베하 | 공작물의 레이저 가공을 위한 방법 및 장치 |
| CN113866992B (zh) * | 2021-09-10 | 2022-07-12 | 华中科技大学 | 一种在太赫兹波段产生无衍射光束的球谐锥透镜 |
| US20240402507A1 (en) * | 2021-10-01 | 2024-12-05 | Tekjp, Inc. | Narrow beam generation device |
| CN114678431B (zh) * | 2022-03-21 | 2024-11-26 | 上海集成电路制造创新中心有限公司 | 一种光电探测器的制备方法 |
| DE102022115711A1 (de) | 2022-06-23 | 2023-12-28 | Schott Ag | Verfahren und Vorrichtung zum Bearbeiten von Werkstücken |
| KR20250091186A (ko) * | 2022-08-17 | 2025-06-20 | 닐슨 싸이언티픽, 엘엘씨 | 병렬화된 3차원 반도체 제조 |
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| JP3531199B2 (ja) * | 1994-02-22 | 2004-05-24 | 三菱電機株式会社 | 光伝送装置 |
| US5776220A (en) * | 1994-09-19 | 1998-07-07 | Corning Incorporated | Method and apparatus for breaking brittle materials |
| JP3338927B2 (ja) * | 1998-05-22 | 2002-10-28 | 住友重機械工業株式会社 | レーザ穴あけ加工装置用のデスミア装置及びデスミア方法 |
| JP2000015467A (ja) * | 1998-07-01 | 2000-01-18 | Shin Meiwa Ind Co Ltd | 光による被加工材の加工方法および加工装置 |
| JP2000288766A (ja) * | 1999-04-07 | 2000-10-17 | Kubota Corp | レーザ加工装置 |
| US6472295B1 (en) * | 1999-08-27 | 2002-10-29 | Jmar Research, Inc. | Method and apparatus for laser ablation of a target material |
| JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| KR100673073B1 (ko) * | 2000-10-21 | 2007-01-22 | 삼성전자주식회사 | 레이저 빔을 이용한 비금속 기판의 절단 방법 및 장치 |
| US6720522B2 (en) * | 2000-10-26 | 2004-04-13 | Kabushiki Kaisha Toshiba | Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining |
| JP3624909B2 (ja) * | 2002-03-12 | 2005-03-02 | 浜松ホトニクス株式会社 | レーザ加工方法 |
| JP2004103628A (ja) * | 2002-09-05 | 2004-04-02 | Hitachi Ltd | レーザアニール装置及びｔｆｔ基板のレーザアニール方法 |
| FR2855084A1 (fr) * | 2003-05-22 | 2004-11-26 | Air Liquide | Optique de focalisation pour le coupage laser |
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| DE102006042280A1 (de) * | 2005-09-08 | 2007-06-06 | IMRA America, Inc., Ann Arbor | Bearbeitung von transparentem Material mit einem Ultrakurzpuls-Laser |
| JP5013699B2 (ja) * | 2005-10-21 | 2012-08-29 | 株式会社キーエンス | ３次元加工データ設定装置、３次元加工データ設定方法、３次元加工データ設定プログラム、コンピュータで読み取り可能な記録媒体及び記録した機器並びにレーザ加工装置 |
| DE102007018400B4 (de) * | 2007-04-17 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optisches System für einen Lasermaterialbearbeitungskopf |
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| JP4948629B2 (ja) * | 2010-07-20 | 2012-06-06 | ウシオ電機株式会社 | レーザリフトオフ方法 |
| GB201014778D0 (en) * | 2010-09-06 | 2010-10-20 | Baird Brian W | Picosecond laser beam shaping assembly and a method of shaping a picosecond laser beam |
| KR101298019B1 (ko) * | 2010-12-28 | 2013-08-26 | (주)큐엠씨 | 레이저 가공 장치 |
| DE102011000768B4 (de) | 2011-02-16 | 2016-08-18 | Ewag Ag | Laserbearbeitungsverfahren und Laserbearbeitungsvorrichtung mit umschaltbarer Laseranordnung |
| US8871613B2 (en) * | 2012-06-18 | 2014-10-28 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| JP5832412B2 (ja) * | 2012-11-12 | 2015-12-16 | 三菱重工業株式会社 | 光学系及びレーザ加工装置 |
| EP2754524B1 (de) * | 2013-01-15 | 2015-11-25 | Corning Laser Technologies GmbH | Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie |
| US9676167B2 (en) * | 2013-12-17 | 2017-06-13 | Corning Incorporated | Laser processing of sapphire substrate and related applications |
| US9517963B2 (en) * | 2013-12-17 | 2016-12-13 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
-
2014
- 2014-07-15 DE DE102014213775.6A patent/DE102014213775B4/de active Active
-
2015
- 2015-07-07 KR KR1020177003422A patent/KR102318041B1/ko active Active
- 2015-07-07 US US15/325,859 patent/US10821555B2/en active Active
- 2015-07-07 EP EP15739207.7A patent/EP3169475B1/de active Active
- 2015-07-07 LT LTEP15739207.7T patent/LT3169475T/lt unknown
- 2015-07-07 PT PT157392077T patent/PT3169475T/pt unknown
- 2015-07-07 ES ES15739207T patent/ES2774377T3/es active Active
- 2015-07-07 JP JP2017522729A patent/JP6804441B2/ja active Active
- 2015-07-07 CN CN201580049806.2A patent/CN107073655B/zh active Active
- 2015-07-07 WO PCT/EP2015/065476 patent/WO2016008768A1/de not_active Ceased
- 2015-07-13 TW TW104122499A patent/TWI688444B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102318041B1 (ko) | 2021-10-27 |
| TWI688444B (zh) | 2020-03-21 |
| KR20170028426A (ko) | 2017-03-13 |
| EP3169475A1 (de) | 2017-05-24 |
| TW201613710A (en) | 2016-04-16 |
| CN107073655B (zh) | 2020-01-14 |
| LT3169475T (lt) | 2020-03-10 |
| WO2016008768A1 (de) | 2016-01-21 |
| DE102014213775A1 (de) | 2016-01-21 |
| EP3169475B1 (de) | 2019-12-04 |
| JP6804441B2 (ja) | 2020-12-23 |
| US20170157700A1 (en) | 2017-06-08 |
| CN107073655A (zh) | 2017-08-18 |
| PT3169475T (pt) | 2020-03-13 |
| JP2017521877A (ja) | 2017-08-03 |
| US10821555B2 (en) | 2020-11-03 |
| DE102014213775B4 (de) | 2018-02-15 |
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