ES2353106T3 - Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. - Google Patents
Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. Download PDFInfo
- Publication number
- ES2353106T3 ES2353106T3 ES00987008T ES00987008T ES2353106T3 ES 2353106 T3 ES2353106 T3 ES 2353106T3 ES 00987008 T ES00987008 T ES 00987008T ES 00987008 T ES00987008 T ES 00987008T ES 2353106 T3 ES2353106 T3 ES 2353106T3
- Authority
- ES
- Spain
- Prior art keywords
- tempering
- energy
- product
- layer
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 278
- 230000008569 process Effects 0.000 title claims abstract description 260
- 238000005496 tempering Methods 0.000 claims abstract description 365
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 87
- 230000005855 radiation Effects 0.000 claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000011068 loading method Methods 0.000 claims abstract description 6
- 238000010521 absorption reaction Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 36
- 238000001816 cooling Methods 0.000 claims description 26
- 239000011796 hollow space material Substances 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000010408 sweeping Methods 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 212
- 239000007789 gas Substances 0.000 description 165
- 239000000047 product Substances 0.000 description 130
- 230000003750 conditioning effect Effects 0.000 description 46
- 238000010438 heat treatment Methods 0.000 description 28
- 229910052736 halogen Inorganic materials 0.000 description 19
- 150000002367 halogens Chemical class 0.000 description 19
- 239000011521 glass Substances 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 230000033228 biological regulation Effects 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 11
- 230000008901 benefit Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000002826 coolant Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000002241 glass-ceramic Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 210000000887 face Anatomy 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004556 laser interferometry Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 235000013599 spices Nutrition 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 210000004127 vitreous body Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Heat Treatment Of Articles (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19950498 | 1999-10-20 | ||
| DE19950498 | 1999-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2353106T3 true ES2353106T3 (es) | 2011-02-25 |
Family
ID=7926265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES00987008T Expired - Lifetime ES2353106T3 (es) | 1999-10-20 | 2000-10-20 | Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6787485B1 (enExample) |
| EP (1) | EP1277238B1 (enExample) |
| JP (1) | JP4524438B2 (enExample) |
| CN (1) | CN1309096C (enExample) |
| AT (1) | ATE481741T1 (enExample) |
| AU (1) | AU780287B2 (enExample) |
| DE (1) | DE50015996D1 (enExample) |
| ES (1) | ES2353106T3 (enExample) |
| WO (1) | WO2001029902A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442413B2 (en) * | 2005-11-18 | 2008-10-28 | Daystar Technologies, Inc. | Methods and apparatus for treating a work piece with a vaporous element |
| DE102005062977B3 (de) | 2005-12-28 | 2007-09-13 | Sulfurcell Solartechnik Gmbh | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
| EP2180534B1 (en) * | 2008-10-27 | 2013-10-16 | Corning Incorporated | Energy conversion devices and methods |
| US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
| CA2705650A1 (en) * | 2010-05-27 | 2011-11-27 | Pyromaitre Inc. | Heat treatment furnace |
| KR101590684B1 (ko) * | 2010-08-27 | 2016-02-01 | 쌩-고벵 글래스 프랑스 | 복수의 다층체를 열처리하기 위한 장치 및 방법 |
| US20120264072A1 (en) * | 2011-02-03 | 2012-10-18 | Stion Corporation | Method and apparatus for performing reactive thermal treatment of thin film pv material |
| ITRE20110055A1 (it) * | 2011-07-25 | 2013-01-26 | Keraglass Engineering S R L | Forno per la ricottura di lastre di vetro |
| US10100402B2 (en) * | 2011-10-07 | 2018-10-16 | International Business Machines Corporation | Substrate holder for graphene film synthesis |
| US20130344646A1 (en) * | 2011-12-21 | 2013-12-26 | Intermolecular, Inc. | Absorbers for High-Efficiency Thin-Film PV |
| US11655515B2 (en) | 2014-06-06 | 2023-05-23 | Nippon Steel & Sumikin Texeng. Co., Ltd. | Far-infrared radiation heating furnace for steel sheet for hot stamping |
| CN104810300A (zh) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | 新型Wafer Bonding设备 |
| JP2017216397A (ja) * | 2016-06-01 | 2017-12-07 | 株式会社アルバック | アニール処理装置およびアニール処理方法 |
| JP6673778B2 (ja) * | 2016-08-02 | 2020-03-25 | 光洋サーモシステム株式会社 | 金属部品の製造方法、および、熱処理装置 |
| EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
| KR102766394B1 (ko) | 2019-12-24 | 2025-02-11 | 삼성디스플레이 주식회사 | 유리 제품의 가공 장치, 유리 제품의 제조 방법, 유리 제품, 및 유리 제품을 포함하는 디스플레이 장치 |
| KR102686945B1 (ko) * | 2021-12-08 | 2024-07-22 | 한화모멘텀 주식회사 | 복층식 열처리로 |
| US12080569B1 (en) | 2022-06-23 | 2024-09-03 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Energy-saving heat treatment device for metal substrate in corrosive gas |
| DE102023117945A1 (de) * | 2023-07-07 | 2025-01-09 | Singulus Technologies Aktiengesellschaft | Schleusenkammer |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022835B2 (ja) | 1978-08-17 | 1985-06-04 | 株式会社村田製作所 | 圧電性磁器の製造方法 |
| US5090898A (en) | 1979-11-16 | 1992-02-25 | Smith Thomas M | Infra-red heating |
| US4368111A (en) * | 1980-12-17 | 1983-01-11 | Phillips Petroleum Company | Oil recovery from tar sands |
| JPS57183041A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
| JPS61129834A (ja) | 1984-11-28 | 1986-06-17 | Dainippon Screen Mfg Co Ltd | 光照射型熱処理装置 |
| US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
| WO1994007269A1 (de) * | 1992-09-22 | 1994-03-31 | Siemens Aktiengesellschaft | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
| JPH0778830A (ja) | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JP2932918B2 (ja) | 1993-12-22 | 1999-08-09 | 日本鋼管株式会社 | α＋β型チタン合金押出材の製造方法 |
| DE4413215C2 (de) * | 1994-04-15 | 1996-03-14 | Siemens Solar Gmbh | Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung |
| JP2875768B2 (ja) | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
| US5861609A (en) | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
| JP3028467B2 (ja) * | 1996-03-13 | 2000-04-04 | 日本無線株式会社 | 電磁加熱型活性化アニール装置 |
| KR100377825B1 (ko) * | 1996-10-09 | 2003-07-16 | 나가다 죠스게 | 반도체디바이스 |
| US5871688A (en) * | 1997-08-06 | 1999-02-16 | North American Manufacturing Company | Multi-stack annealer |
| CN1224924A (zh) * | 1997-12-26 | 1999-08-04 | 佳能株式会社 | 热处理soi衬底的方法和设备及利用其制备soi衬底的方法 |
| US6171982B1 (en) * | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
| US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
-
2000
- 2000-10-20 US US10/111,283 patent/US6787485B1/en not_active Expired - Lifetime
- 2000-10-20 CN CNB008173818A patent/CN1309096C/zh not_active Expired - Lifetime
- 2000-10-20 AT AT00987008T patent/ATE481741T1/de not_active IP Right Cessation
- 2000-10-20 AU AU23450/01A patent/AU780287B2/en not_active Ceased
- 2000-10-20 ES ES00987008T patent/ES2353106T3/es not_active Expired - Lifetime
- 2000-10-20 DE DE50015996T patent/DE50015996D1/de not_active Expired - Lifetime
- 2000-10-20 EP EP00987008A patent/EP1277238B1/de not_active Expired - Lifetime
- 2000-10-20 JP JP2001531149A patent/JP4524438B2/ja not_active Expired - Lifetime
- 2000-10-20 WO PCT/DE2000/003720 patent/WO2001029902A2/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN1309096C (zh) | 2007-04-04 |
| JP4524438B2 (ja) | 2010-08-18 |
| AU780287B2 (en) | 2005-03-10 |
| US6787485B1 (en) | 2004-09-07 |
| EP1277238B1 (de) | 2010-09-15 |
| DE50015996D1 (de) | 2010-10-28 |
| WO2001029902A3 (de) | 2002-11-07 |
| WO2001029902A2 (de) | 2001-04-26 |
| AU2345001A (en) | 2001-04-30 |
| ATE481741T1 (de) | 2010-10-15 |
| JP2003524745A (ja) | 2003-08-19 |
| CN1411613A (zh) | 2003-04-16 |
| EP1277238A2 (de) | 2003-01-22 |
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