AU780287B2 - Device and method for tempering several process goods - Google Patents

Device and method for tempering several process goods Download PDF

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Publication number
AU780287B2
AU780287B2 AU23450/01A AU2345001A AU780287B2 AU 780287 B2 AU780287 B2 AU 780287B2 AU 23450/01 A AU23450/01 A AU 23450/01A AU 2345001 A AU2345001 A AU 2345001A AU 780287 B2 AU780287 B2 AU 780287B2
Authority
AU
Australia
Prior art keywords
tempering
appliance
stack
energy
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU23450/01A
Other languages
English (en)
Other versions
AU2345001A (en
Inventor
Volker Probst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shell Erneuerbare Energien GmbH
Original Assignee
Shell Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shell Solar GmbH filed Critical Shell Solar GmbH
Publication of AU2345001A publication Critical patent/AU2345001A/en
Assigned to SHELL SOLAR GMBH reassignment SHELL SOLAR GMBH Alteration of Name(s) of Applicant(s) under S113 Assignors: SIEMENS AKTIENGESELLSCHAFT
Application granted granted Critical
Publication of AU780287B2 publication Critical patent/AU780287B2/en
Assigned to SHELL ERNEUERBARE ENERGIEN GMBH reassignment SHELL ERNEUERBARE ENERGIEN GMBH Alteration of Name(s) in Register under S187 Assignors: SHELL SOLAR GMBH
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/34—Methods of heating
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Heat Treatment Of Articles (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
  • Furnace Details (AREA)
AU23450/01A 1999-10-20 2000-10-20 Device and method for tempering several process goods Ceased AU780287B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19950498 1999-10-20
DE19950498 1999-10-20
PCT/DE2000/003720 WO2001029902A2 (de) 1999-10-20 2000-10-20 Vorrichtung und verfahren zum temperieren mehrerer prozessiergüter

Publications (2)

Publication Number Publication Date
AU2345001A AU2345001A (en) 2001-04-30
AU780287B2 true AU780287B2 (en) 2005-03-10

Family

ID=7926265

Family Applications (1)

Application Number Title Priority Date Filing Date
AU23450/01A Ceased AU780287B2 (en) 1999-10-20 2000-10-20 Device and method for tempering several process goods

Country Status (9)

Country Link
US (1) US6787485B1 (enExample)
EP (1) EP1277238B1 (enExample)
JP (1) JP4524438B2 (enExample)
CN (1) CN1309096C (enExample)
AT (1) ATE481741T1 (enExample)
AU (1) AU780287B2 (enExample)
DE (1) DE50015996D1 (enExample)
ES (1) ES2353106T3 (enExample)
WO (1) WO2001029902A2 (enExample)

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US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
DE102005062977B3 (de) 2005-12-28 2007-09-13 Sulfurcell Solartechnik Gmbh Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen
EP2180534B1 (en) * 2008-10-27 2013-10-16 Corning Incorporated Energy conversion devices and methods
US20110203655A1 (en) * 2010-02-22 2011-08-25 First Solar, Inc. Photovoltaic device protection layer
CA2705650A1 (en) * 2010-05-27 2011-11-27 Pyromaitre Inc. Heat treatment furnace
KR101590684B1 (ko) * 2010-08-27 2016-02-01 쌩-고벵 글래스 프랑스 복수의 다층체를 열처리하기 위한 장치 및 방법
US20120264072A1 (en) * 2011-02-03 2012-10-18 Stion Corporation Method and apparatus for performing reactive thermal treatment of thin film pv material
ITRE20110055A1 (it) * 2011-07-25 2013-01-26 Keraglass Engineering S R L Forno per la ricottura di lastre di vetro
US10100402B2 (en) * 2011-10-07 2018-10-16 International Business Machines Corporation Substrate holder for graphene film synthesis
US20130344646A1 (en) * 2011-12-21 2013-12-26 Intermolecular, Inc. Absorbers for High-Efficiency Thin-Film PV
US11655515B2 (en) 2014-06-06 2023-05-23 Nippon Steel & Sumikin Texeng. Co., Ltd. Far-infrared radiation heating furnace for steel sheet for hot stamping
CN104810300A (zh) * 2015-03-31 2015-07-29 山西南烨立碁光电有限公司 新型Wafer Bonding设备
JP2017216397A (ja) * 2016-06-01 2017-12-07 株式会社アルバック アニール処理装置およびアニール処理方法
JP6673778B2 (ja) * 2016-08-02 2020-03-25 光洋サーモシステム株式会社 金属部品の製造方法、および、熱処理装置
EP3690962A1 (de) * 2019-01-31 2020-08-05 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers
KR102766394B1 (ko) 2019-12-24 2025-02-11 삼성디스플레이 주식회사 유리 제품의 가공 장치, 유리 제품의 제조 방법, 유리 제품, 및 유리 제품을 포함하는 디스플레이 장치
KR102686945B1 (ko) * 2021-12-08 2024-07-22 한화모멘텀 주식회사 복층식 열처리로
US12080569B1 (en) 2022-06-23 2024-09-03 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Energy-saving heat treatment device for metal substrate in corrosive gas
DE102023117945A1 (de) * 2023-07-07 2025-01-09 Singulus Technologies Aktiengesellschaft Schleusenkammer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399662A2 (en) * 1989-05-01 1990-11-28 AT&T Corp. Procedure for annealing of semiconductors
EP0926719A2 (en) * 1997-12-26 1999-06-30 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
US5926742A (en) * 1996-01-04 1999-07-20 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source

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JPS6022835B2 (ja) 1978-08-17 1985-06-04 株式会社村田製作所 圧電性磁器の製造方法
US5090898A (en) 1979-11-16 1992-02-25 Smith Thomas M Infra-red heating
US4368111A (en) * 1980-12-17 1983-01-11 Phillips Petroleum Company Oil recovery from tar sands
JPS57183041A (en) * 1981-05-06 1982-11-11 Nec Corp Annealing method for chemical semiconductor
JPS61129834A (ja) 1984-11-28 1986-06-17 Dainippon Screen Mfg Co Ltd 光照射型熱処理装置
WO1994007269A1 (de) * 1992-09-22 1994-03-31 Siemens Aktiengesellschaft Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
JPH0778830A (ja) 1993-09-07 1995-03-20 Hitachi Ltd 半導体製造装置
JP2932918B2 (ja) 1993-12-22 1999-08-09 日本鋼管株式会社 α＋β型チタン合金押出材の製造方法
DE4413215C2 (de) * 1994-04-15 1996-03-14 Siemens Solar Gmbh Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung
JP2875768B2 (ja) 1994-11-30 1999-03-31 新日本無線株式会社 半導体基板の熱処理方法
US5861609A (en) 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
JP3028467B2 (ja) * 1996-03-13 2000-04-04 日本無線株式会社 電磁加熱型活性化アニール装置
KR100377825B1 (ko) * 1996-10-09 2003-07-16 나가다 죠스게 반도체디바이스
US5871688A (en) * 1997-08-06 1999-02-16 North American Manufacturing Company Multi-stack annealer
CN1224924A (zh) * 1997-12-26 1999-08-04 佳能株式会社 热处理soi衬底的方法和设备及利用其制备soi衬底的方法
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0399662A2 (en) * 1989-05-01 1990-11-28 AT&T Corp. Procedure for annealing of semiconductors
US5926742A (en) * 1996-01-04 1999-07-20 Micron Technology, Inc. Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source
EP0926719A2 (en) * 1997-12-26 1999-06-30 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same

Also Published As

Publication number Publication date
CN1309096C (zh) 2007-04-04
JP4524438B2 (ja) 2010-08-18
US6787485B1 (en) 2004-09-07
EP1277238B1 (de) 2010-09-15
DE50015996D1 (de) 2010-10-28
WO2001029902A3 (de) 2002-11-07
WO2001029902A2 (de) 2001-04-26
AU2345001A (en) 2001-04-30
ATE481741T1 (de) 2010-10-15
JP2003524745A (ja) 2003-08-19
CN1411613A (zh) 2003-04-16
EP1277238A2 (de) 2003-01-22
ES2353106T3 (es) 2011-02-25

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PC1 Assignment before grant (sect. 113)

Owner name: SHELL SOLAR GMBH

Free format text: THE FORMER OWNER WAS: SIEMENS AKTIENGESELLSCHAFT