ATE481741T1 - Vorrichtung und verfahren zum gleichzeitigen temperieren mehrerer prozessiergüter - Google Patents
Vorrichtung und verfahren zum gleichzeitigen temperieren mehrerer prozessiergüterInfo
- Publication number
- ATE481741T1 ATE481741T1 AT00987008T AT00987008T ATE481741T1 AT E481741 T1 ATE481741 T1 AT E481741T1 AT 00987008 T AT00987008 T AT 00987008T AT 00987008 T AT00987008 T AT 00987008T AT E481741 T1 ATE481741 T1 AT E481741T1
- Authority
- AT
- Austria
- Prior art keywords
- appliance
- tempering
- items
- controlling
- temperature
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Heat Treatment Of Articles (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19950498 | 1999-10-20 | ||
| PCT/DE2000/003720 WO2001029902A2 (de) | 1999-10-20 | 2000-10-20 | Vorrichtung und verfahren zum temperieren mehrerer prozessiergüter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE481741T1 true ATE481741T1 (de) | 2010-10-15 |
Family
ID=7926265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00987008T ATE481741T1 (de) | 1999-10-20 | 2000-10-20 | Vorrichtung und verfahren zum gleichzeitigen temperieren mehrerer prozessiergüter |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6787485B1 (enExample) |
| EP (1) | EP1277238B1 (enExample) |
| JP (1) | JP4524438B2 (enExample) |
| CN (1) | CN1309096C (enExample) |
| AT (1) | ATE481741T1 (enExample) |
| AU (1) | AU780287B2 (enExample) |
| DE (1) | DE50015996D1 (enExample) |
| ES (1) | ES2353106T3 (enExample) |
| WO (1) | WO2001029902A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442413B2 (en) * | 2005-11-18 | 2008-10-28 | Daystar Technologies, Inc. | Methods and apparatus for treating a work piece with a vaporous element |
| DE102005062977B3 (de) | 2005-12-28 | 2007-09-13 | Sulfurcell Solartechnik Gmbh | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
| EP2180534B1 (en) * | 2008-10-27 | 2013-10-16 | Corning Incorporated | Energy conversion devices and methods |
| US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
| CA2705650A1 (en) * | 2010-05-27 | 2011-11-27 | Pyromaitre Inc. | Heat treatment furnace |
| KR101590684B1 (ko) * | 2010-08-27 | 2016-02-01 | 쌩-고벵 글래스 프랑스 | 복수의 다층체를 열처리하기 위한 장치 및 방법 |
| US20120264072A1 (en) * | 2011-02-03 | 2012-10-18 | Stion Corporation | Method and apparatus for performing reactive thermal treatment of thin film pv material |
| ITRE20110055A1 (it) * | 2011-07-25 | 2013-01-26 | Keraglass Engineering S R L | Forno per la ricottura di lastre di vetro |
| US10100402B2 (en) * | 2011-10-07 | 2018-10-16 | International Business Machines Corporation | Substrate holder for graphene film synthesis |
| US20130344646A1 (en) * | 2011-12-21 | 2013-12-26 | Intermolecular, Inc. | Absorbers for High-Efficiency Thin-Film PV |
| US11655515B2 (en) | 2014-06-06 | 2023-05-23 | Nippon Steel & Sumikin Texeng. Co., Ltd. | Far-infrared radiation heating furnace for steel sheet for hot stamping |
| CN104810300A (zh) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | 新型Wafer Bonding设备 |
| JP2017216397A (ja) * | 2016-06-01 | 2017-12-07 | 株式会社アルバック | アニール処理装置およびアニール処理方法 |
| JP6673778B2 (ja) * | 2016-08-02 | 2020-03-25 | 光洋サーモシステム株式会社 | 金属部品の製造方法、および、熱処理装置 |
| EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
| KR102766394B1 (ko) | 2019-12-24 | 2025-02-11 | 삼성디스플레이 주식회사 | 유리 제품의 가공 장치, 유리 제품의 제조 방법, 유리 제품, 및 유리 제품을 포함하는 디스플레이 장치 |
| KR102686945B1 (ko) * | 2021-12-08 | 2024-07-22 | 한화모멘텀 주식회사 | 복층식 열처리로 |
| US12080569B1 (en) | 2022-06-23 | 2024-09-03 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Energy-saving heat treatment device for metal substrate in corrosive gas |
| DE102023117945A1 (de) * | 2023-07-07 | 2025-01-09 | Singulus Technologies Aktiengesellschaft | Schleusenkammer |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022835B2 (ja) | 1978-08-17 | 1985-06-04 | 株式会社村田製作所 | 圧電性磁器の製造方法 |
| US5090898A (en) | 1979-11-16 | 1992-02-25 | Smith Thomas M | Infra-red heating |
| US4368111A (en) * | 1980-12-17 | 1983-01-11 | Phillips Petroleum Company | Oil recovery from tar sands |
| JPS57183041A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
| JPS61129834A (ja) | 1984-11-28 | 1986-06-17 | Dainippon Screen Mfg Co Ltd | 光照射型熱処理装置 |
| US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
| WO1994007269A1 (de) * | 1992-09-22 | 1994-03-31 | Siemens Aktiengesellschaft | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
| JPH0778830A (ja) | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
| JP2932918B2 (ja) | 1993-12-22 | 1999-08-09 | 日本鋼管株式会社 | α+β型チタン合金押出材の製造方法 |
| DE4413215C2 (de) * | 1994-04-15 | 1996-03-14 | Siemens Solar Gmbh | Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung |
| JP2875768B2 (ja) | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
| US5861609A (en) | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
| JP3028467B2 (ja) * | 1996-03-13 | 2000-04-04 | 日本無線株式会社 | 電磁加熱型活性化アニール装置 |
| KR100377825B1 (ko) * | 1996-10-09 | 2003-07-16 | 나가다 죠스게 | 반도체디바이스 |
| US5871688A (en) * | 1997-08-06 | 1999-02-16 | North American Manufacturing Company | Multi-stack annealer |
| CN1224924A (zh) * | 1997-12-26 | 1999-08-04 | 佳能株式会社 | 热处理soi衬底的方法和设备及利用其制备soi衬底的方法 |
| US6171982B1 (en) * | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
| US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
-
2000
- 2000-10-20 US US10/111,283 patent/US6787485B1/en not_active Expired - Lifetime
- 2000-10-20 CN CNB008173818A patent/CN1309096C/zh not_active Expired - Lifetime
- 2000-10-20 AT AT00987008T patent/ATE481741T1/de not_active IP Right Cessation
- 2000-10-20 AU AU23450/01A patent/AU780287B2/en not_active Ceased
- 2000-10-20 ES ES00987008T patent/ES2353106T3/es not_active Expired - Lifetime
- 2000-10-20 DE DE50015996T patent/DE50015996D1/de not_active Expired - Lifetime
- 2000-10-20 EP EP00987008A patent/EP1277238B1/de not_active Expired - Lifetime
- 2000-10-20 JP JP2001531149A patent/JP4524438B2/ja not_active Expired - Lifetime
- 2000-10-20 WO PCT/DE2000/003720 patent/WO2001029902A2/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CN1309096C (zh) | 2007-04-04 |
| JP4524438B2 (ja) | 2010-08-18 |
| AU780287B2 (en) | 2005-03-10 |
| US6787485B1 (en) | 2004-09-07 |
| EP1277238B1 (de) | 2010-09-15 |
| DE50015996D1 (de) | 2010-10-28 |
| WO2001029902A3 (de) | 2002-11-07 |
| WO2001029902A2 (de) | 2001-04-26 |
| AU2345001A (en) | 2001-04-30 |
| JP2003524745A (ja) | 2003-08-19 |
| CN1411613A (zh) | 2003-04-16 |
| EP1277238A2 (de) | 2003-01-22 |
| ES2353106T3 (es) | 2011-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REN | Ceased due to non-payment of the annual fee |