CN1309096C - 用于退火多种处理物的装置和方法 - Google Patents
用于退火多种处理物的装置和方法 Download PDFInfo
- Publication number
- CN1309096C CN1309096C CNB008173818A CN00817381A CN1309096C CN 1309096 C CN1309096 C CN 1309096C CN B008173818 A CNB008173818 A CN B008173818A CN 00817381 A CN00817381 A CN 00817381A CN 1309096 C CN1309096 C CN 1309096C
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- energy
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000008569 process Effects 0.000 title abstract description 27
- 238000005496 tempering Methods 0.000 title abstract 3
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 82
- 238000012545 processing Methods 0.000 claims abstract description 70
- 238000010521 absorption reaction Methods 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims description 245
- 230000005855 radiation Effects 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 40
- 238000007789 sealing Methods 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 23
- 238000011049 filling Methods 0.000 claims description 15
- 239000011148 porous material Substances 0.000 claims description 5
- 239000006096 absorbing agent Substances 0.000 claims description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims 2
- 230000005622 photoelectricity Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 25
- 239000010409 thin film Substances 0.000 abstract description 3
- 231100000331 toxic Toxicity 0.000 abstract 1
- 230000002588 toxic effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 158
- 239000007789 gas Substances 0.000 description 134
- 230000006872 improvement Effects 0.000 description 45
- 238000011010 flushing procedure Methods 0.000 description 20
- 229910052736 halogen Inorganic materials 0.000 description 18
- 150000002367 halogens Chemical class 0.000 description 18
- 239000011521 glass Substances 0.000 description 15
- 239000002241 glass-ceramic Substances 0.000 description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000008901 benefit Effects 0.000 description 10
- 230000002349 favourable effect Effects 0.000 description 9
- 230000001105 regulatory effect Effects 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005086 pumping Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000110 cooling liquid Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 231100000614 poison Toxicity 0.000 description 4
- 230000007096 poisonous effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 208000002925 dental caries Diseases 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003447 ipsilateral effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- -1 pottery Substances 0.000 description 2
- 230000010349 pulsation Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/34—Methods of heating
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Heat Treatment Of Articles (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Furnace Details (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19950498 | 1999-10-20 | ||
DE19950498.9 | 1999-10-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1411613A CN1411613A (zh) | 2003-04-16 |
CN1309096C true CN1309096C (zh) | 2007-04-04 |
Family
ID=7926265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008173818A Expired - Lifetime CN1309096C (zh) | 1999-10-20 | 2000-10-20 | 用于退火多种处理物的装置和方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6787485B1 (zh) |
EP (1) | EP1277238B1 (zh) |
JP (1) | JP4524438B2 (zh) |
CN (1) | CN1309096C (zh) |
AT (1) | ATE481741T1 (zh) |
AU (1) | AU780287B2 (zh) |
DE (1) | DE50015996D1 (zh) |
ES (1) | ES2353106T3 (zh) |
WO (1) | WO2001029902A2 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442413B2 (en) * | 2005-11-18 | 2008-10-28 | Daystar Technologies, Inc. | Methods and apparatus for treating a work piece with a vaporous element |
DE102005062977B3 (de) | 2005-12-28 | 2007-09-13 | Sulfurcell Solartechnik Gmbh | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
EP2180534B1 (en) * | 2008-10-27 | 2013-10-16 | Corning Incorporated | Energy conversion devices and methods |
US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
CA2705650A1 (en) * | 2010-05-27 | 2011-11-27 | Pyromaitre Inc. | Heat treatment furnace |
US20130216967A1 (en) * | 2010-08-27 | 2013-08-22 | Saint-Gobain Glass France | Device and method for heat-treating a plurality of multi-layer bodies |
US20120264072A1 (en) * | 2011-02-03 | 2012-10-18 | Stion Corporation | Method and apparatus for performing reactive thermal treatment of thin film pv material |
ITRE20110055A1 (it) * | 2011-07-25 | 2013-01-26 | Keraglass Engineering S R L | Forno per la ricottura di lastre di vetro |
US10100402B2 (en) | 2011-10-07 | 2018-10-16 | International Business Machines Corporation | Substrate holder for graphene film synthesis |
US20130344646A1 (en) * | 2011-12-21 | 2013-12-26 | Intermolecular, Inc. | Absorbers for High-Efficiency Thin-Film PV |
JP5927355B2 (ja) * | 2014-06-06 | 2016-06-01 | 日鉄住金テックスエンジ株式会社 | 熱間プレス用鋼板の遠赤外線式加熱炉 |
CN104810300A (zh) * | 2015-03-31 | 2015-07-29 | 山西南烨立碁光电有限公司 | 新型Wafer Bonding设备 |
JP2017216397A (ja) * | 2016-06-01 | 2017-12-07 | 株式会社アルバック | アニール処理装置およびアニール処理方法 |
JP6673778B2 (ja) * | 2016-08-02 | 2020-03-25 | 光洋サーモシステム株式会社 | 金属部品の製造方法、および、熱処理装置 |
EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
KR102686945B1 (ko) * | 2021-12-08 | 2024-07-22 | 한화모멘텀 주식회사 | 복층식 열처리로 |
CN117083698A (zh) | 2022-06-23 | 2023-11-17 | 中建材玻璃新材料研究院集团有限公司 | 腐蚀性气体中金属基体的节能热处理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246277A (ja) * | 1996-03-13 | 1997-09-19 | Japan Radio Co Ltd | 電磁加熱型活性化アニール装置 |
US5871688A (en) * | 1997-08-06 | 1999-02-16 | North American Manufacturing Company | Multi-stack annealer |
CN1224924A (zh) * | 1997-12-26 | 1999-08-04 | 佳能株式会社 | 热处理soi衬底的方法和设备及利用其制备soi衬底的方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6022835B2 (ja) | 1978-08-17 | 1985-06-04 | 株式会社村田製作所 | 圧電性磁器の製造方法 |
US5090898A (en) | 1979-11-16 | 1992-02-25 | Smith Thomas M | Infra-red heating |
US4368111A (en) * | 1980-12-17 | 1983-01-11 | Phillips Petroleum Company | Oil recovery from tar sands |
JPS57183041A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
JPS61129834A (ja) * | 1984-11-28 | 1986-06-17 | Dainippon Screen Mfg Co Ltd | 光照射型熱処理装置 |
US5011794A (en) | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
JP3386127B2 (ja) | 1992-09-22 | 2003-03-17 | シーメンス アクチエンゲゼルシヤフト | 基板上に黄銅鉱半導体を迅速に作成する方法 |
JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
JP2932918B2 (ja) | 1993-12-22 | 1999-08-09 | 日本鋼管株式会社 | α+β型チタン合金押出材の製造方法 |
DE4413215C2 (de) * | 1994-04-15 | 1996-03-14 | Siemens Solar Gmbh | Solarmodul mit Dünnschichtaufbau und Verfahren zu seiner Herstellung |
JP2875768B2 (ja) | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
US5861609A (en) | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
US6204545B1 (en) * | 1996-10-09 | 2001-03-20 | Josuke Nakata | Semiconductor device |
US6171982B1 (en) | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
-
2000
- 2000-10-20 AU AU23450/01A patent/AU780287B2/en not_active Ceased
- 2000-10-20 US US10/111,283 patent/US6787485B1/en not_active Expired - Lifetime
- 2000-10-20 JP JP2001531149A patent/JP4524438B2/ja not_active Expired - Lifetime
- 2000-10-20 DE DE50015996T patent/DE50015996D1/de not_active Expired - Lifetime
- 2000-10-20 AT AT00987008T patent/ATE481741T1/de not_active IP Right Cessation
- 2000-10-20 CN CNB008173818A patent/CN1309096C/zh not_active Expired - Lifetime
- 2000-10-20 WO PCT/DE2000/003720 patent/WO2001029902A2/de active IP Right Grant
- 2000-10-20 ES ES00987008T patent/ES2353106T3/es not_active Expired - Lifetime
- 2000-10-20 EP EP00987008A patent/EP1277238B1/de not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09246277A (ja) * | 1996-03-13 | 1997-09-19 | Japan Radio Co Ltd | 電磁加熱型活性化アニール装置 |
US5871688A (en) * | 1997-08-06 | 1999-02-16 | North American Manufacturing Company | Multi-stack annealer |
CN1224924A (zh) * | 1997-12-26 | 1999-08-04 | 佳能株式会社 | 热处理soi衬底的方法和设备及利用其制备soi衬底的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4524438B2 (ja) | 2010-08-18 |
AU780287B2 (en) | 2005-03-10 |
ATE481741T1 (de) | 2010-10-15 |
CN1411613A (zh) | 2003-04-16 |
WO2001029902A2 (de) | 2001-04-26 |
ES2353106T3 (es) | 2011-02-25 |
EP1277238A2 (de) | 2003-01-22 |
WO2001029902A3 (de) | 2002-11-07 |
JP2003524745A (ja) | 2003-08-19 |
DE50015996D1 (de) | 2010-10-28 |
US6787485B1 (en) | 2004-09-07 |
EP1277238B1 (de) | 2010-09-15 |
AU2345001A (en) | 2001-04-30 |
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