CN1263166C - 多层物体退火处理的装置和方法 - Google Patents
多层物体退火处理的装置和方法 Download PDFInfo
- Publication number
- CN1263166C CN1263166C CN00813743.9A CN00813743A CN1263166C CN 1263166 C CN1263166 C CN 1263166C CN 00813743 A CN00813743 A CN 00813743A CN 1263166 C CN1263166 C CN 1263166C
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0036—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Thermal Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19936081A DE19936081A1 (de) | 1999-07-30 | 1999-07-30 | Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper |
DE19936081.2 | 1999-07-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1399798A CN1399798A (zh) | 2003-02-26 |
CN1263166C true CN1263166C (zh) | 2006-07-05 |
Family
ID=7916741
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN00813743.9A Expired - Lifetime CN1263166C (zh) | 1999-07-30 | 2000-07-31 | 多层物体退火处理的装置和方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6717112B1 (zh) |
EP (1) | EP1258043B1 (zh) |
JP (1) | JP5361106B2 (zh) |
CN (1) | CN1263166C (zh) |
AU (1) | AU781422B2 (zh) |
DE (1) | DE19936081A1 (zh) |
ES (1) | ES2691644T3 (zh) |
WO (1) | WO2001009961A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104737301A (zh) * | 2012-07-19 | 2015-06-24 | 法国圣戈班玻璃厂 | 在热工艺中玻璃弯曲的避免 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
DE10260672A1 (de) * | 2002-12-23 | 2004-07-15 | Mattson Thermal Products Gmbh | Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten |
DE102005062977B3 (de) * | 2005-12-28 | 2007-09-13 | Sulfurcell Solartechnik Gmbh | Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen |
US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
EP1855324A1 (de) * | 2006-05-12 | 2007-11-14 | Applied Materials GmbH & Co. KG | Substratträger aus glaskeramischen Material |
DE102008022784A1 (de) | 2008-05-08 | 2009-11-12 | Avancis Gmbh & Co. Kg | Vorrichtung und Verfahren zum Tempern von Gegenständen in einer Behandlungskammer |
US8314369B2 (en) * | 2008-09-17 | 2012-11-20 | Applied Materials, Inc. | Managing thermal budget in annealing of substrates |
US20100068898A1 (en) | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
JP5863457B2 (ja) * | 2008-11-28 | 2016-02-16 | プロブスト、フォルカー | 平坦基板にセレン、硫黄元素処理で半導体層と被覆基板を製造する方法 |
TWI418047B (zh) * | 2009-01-07 | 2013-12-01 | Ind Tech Res Inst | Ib-iiia-via2化合物半導體薄膜之製造裝置 |
US20100304527A1 (en) * | 2009-03-03 | 2010-12-02 | Peter Borden | Methods of thermal processing a solar cell |
US20120006263A1 (en) * | 2009-08-06 | 2012-01-12 | Sumitomo Electric Industries, Ltd. | Film deposition apparatus |
DE102009053532B4 (de) * | 2009-11-18 | 2017-01-05 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht |
DE102009047483A1 (de) | 2009-12-04 | 2011-06-09 | Sulfurcell Solartechnik Gmbh | Vorrichtung und Verfahren zur Erzeugung von Chalkopyrit-Absorberschichten in Solarzellen |
DE102010008084A1 (de) | 2010-02-15 | 2011-08-18 | Leybold Optics GmbH, 63755 | Vorrichtung zur thermischen Behandlung von Substraten |
US20110203655A1 (en) * | 2010-02-22 | 2011-08-25 | First Solar, Inc. | Photovoltaic device protection layer |
EP2360720A1 (de) * | 2010-02-23 | 2011-08-24 | Saint-Gobain Glass France | Vorrichtung zum Positionieren von mindestens zwei Gegenständen, Anordnungen, insbesondere Mehrschichtkörperanordnungen, Anlage zum Prozessieren, insbesondere zum Selenisieren, von Gegenständen, Verfahren zum Positionieren von mindestens zwei Gegenständen |
TW201203584A (en) | 2010-07-02 | 2012-01-16 | Adpv Technology Ltd | Rapid thermal process heating system and method thereof |
DE102015016002A1 (de) * | 2015-12-10 | 2017-06-14 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zum thermischen Behandeln von Substraten sowie Aufnahmeeinheit für Substrate |
EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
DE102020208184A1 (de) | 2020-06-30 | 2021-12-30 | Singulus Technologies Aktiengesellschaft | Heizsystem und Verfahren zum Aufheizen von großflächigen Substraten |
DE102021004175B3 (de) | 2021-08-13 | 2022-12-01 | Singulus Technologies Aktiengesellschaft | Abstandsvorrichtung für Heizsystem zum Aufheizen von großflächigen Substraten, Heizsystem und Aufheizverfahren |
CA3143926A1 (en) * | 2021-08-19 | 2023-02-19 | James William Masten | Thermophysical process for the heat treatment of glass |
CN117083698A (zh) | 2022-06-23 | 2023-11-17 | 中建材玻璃新材料研究院集团有限公司 | 腐蚀性气体中金属基体的节能热处理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS57183041A (en) * | 1981-05-06 | 1982-11-11 | Nec Corp | Annealing method for chemical semiconductor |
US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
JPS63257221A (ja) * | 1987-04-14 | 1988-10-25 | Nec Corp | ランプアニ−ル装置 |
JPH01179309A (ja) * | 1987-12-30 | 1989-07-17 | Tokyo Electron Ltd | 加熱法 |
US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
JPH0812847B2 (ja) * | 1991-04-22 | 1996-02-07 | 株式会社半導体プロセス研究所 | 半導体製造装置及び半導体装置の製造方法 |
JP3002013B2 (ja) * | 1991-06-04 | 2000-01-24 | 松下技研株式会社 | 薄膜および多層膜の製造方法およびその製造装置 |
DE59309438D1 (de) | 1992-09-22 | 1999-04-15 | Siemens Ag | Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat |
JPH0778830A (ja) * | 1993-09-07 | 1995-03-20 | Hitachi Ltd | 半導体製造装置 |
JP2825756B2 (ja) * | 1994-05-27 | 1998-11-18 | シャープ株式会社 | 薄膜el素子の製造方法および製造装置 |
JP2875768B2 (ja) * | 1994-11-30 | 1999-03-31 | 新日本無線株式会社 | 半導体基板の熱処理方法 |
US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
US5851929A (en) * | 1996-01-04 | 1998-12-22 | Micron Technology, Inc. | Controlling semiconductor structural warpage in rapid thermal processing by selective and dynamic control of a heating source |
DE19711702C1 (de) * | 1997-03-20 | 1998-06-25 | Siemens Ag | Anordnung zur Bearbeitung einer Substratscheibe und Verfahren zu deren Betrieb |
GB9717182D0 (en) * | 1997-08-13 | 1997-10-22 | Glaverbel | Copper mirrors |
US6173116B1 (en) * | 1997-12-19 | 2001-01-09 | U.S. Philips Corporation | Furnace for rapid thermal processing |
US6171982B1 (en) * | 1997-12-26 | 2001-01-09 | Canon Kabushiki Kaisha | Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same |
-
1999
- 1999-07-30 DE DE19936081A patent/DE19936081A1/de not_active Ceased
-
2000
- 2000-07-31 AU AU74020/00A patent/AU781422B2/en not_active Ceased
- 2000-07-31 US US10/048,419 patent/US6717112B1/en not_active Expired - Lifetime
- 2000-07-31 WO PCT/DE2000/002523 patent/WO2001009961A2/de active IP Right Grant
- 2000-07-31 ES ES00962177.2T patent/ES2691644T3/es not_active Expired - Lifetime
- 2000-07-31 EP EP00962177.2A patent/EP1258043B1/de not_active Expired - Lifetime
- 2000-07-31 CN CN00813743.9A patent/CN1263166C/zh not_active Expired - Lifetime
- 2000-07-31 JP JP2001514489A patent/JP5361106B2/ja not_active Expired - Lifetime
-
2003
- 2003-10-27 US US10/692,728 patent/US6884968B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104737301A (zh) * | 2012-07-19 | 2015-06-24 | 法国圣戈班玻璃厂 | 在热工艺中玻璃弯曲的避免 |
CN104737301B (zh) * | 2012-07-19 | 2017-03-01 | 法国圣戈班玻璃厂 | 在热工艺中玻璃弯曲的避免 |
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Publication number | Publication date |
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EP1258043A2 (de) | 2002-11-20 |
AU7402000A (en) | 2001-02-19 |
US6717112B1 (en) | 2004-04-06 |
WO2001009961A2 (de) | 2001-02-08 |
WO2001009961A3 (de) | 2002-09-19 |
AU781422B2 (en) | 2005-05-19 |
ES2691644T3 (es) | 2018-11-28 |
JP5361106B2 (ja) | 2013-12-04 |
EP1258043B1 (de) | 2018-07-18 |
US20040087172A1 (en) | 2004-05-06 |
JP2003519441A (ja) | 2003-06-17 |
US6884968B2 (en) | 2005-04-26 |
DE19936081A1 (de) | 2001-02-08 |
CN1399798A (zh) | 2003-02-26 |
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