ES2345859T3 - Fuente de electrones de emision de campo, procedimiento para la produccion de la misma, y uso de la misma. - Google Patents
Fuente de electrones de emision de campo, procedimiento para la produccion de la misma, y uso de la misma. Download PDFInfo
- Publication number
- ES2345859T3 ES2345859T3 ES98116103T ES98116103T ES2345859T3 ES 2345859 T3 ES2345859 T3 ES 2345859T3 ES 98116103 T ES98116103 T ES 98116103T ES 98116103 T ES98116103 T ES 98116103T ES 2345859 T3 ES2345859 T3 ES 2345859T3
- Authority
- ES
- Spain
- Prior art keywords
- layer
- polysilicon
- field emission
- source
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title description 16
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 94
- 229920005591 polysilicon Polymers 0.000 claims abstract description 94
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000002086 nanomaterial Substances 0.000 claims abstract description 10
- 238000010894 electron beam technology Methods 0.000 claims abstract description 9
- 239000007787 solid Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 6
- 238000005121 nitriding Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 123
- 239000010408 film Substances 0.000 description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 239000010931 gold Substances 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 39
- 239000010703 silicon Substances 0.000 description 39
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 38
- 229910052737 gold Inorganic materials 0.000 description 38
- 230000003647 oxidation Effects 0.000 description 32
- 238000007254 oxidation reaction Methods 0.000 description 32
- 239000010409 thin film Substances 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 18
- 238000002048 anodisation reaction Methods 0.000 description 16
- 238000007743 anodising Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011244 liquid electrolyte Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001684 chronic effect Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012800 visualization Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electron Sources, Ion Sources (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29710897 | 1997-10-29 | ||
| JP10-65592 | 1998-03-16 | ||
| JP6559298 | 1998-03-16 | ||
| JP9-297108 | 1998-03-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2345859T3 true ES2345859T3 (es) | 2010-10-04 |
Family
ID=26406731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES98116103T Expired - Lifetime ES2345859T3 (es) | 1997-10-29 | 1998-08-26 | Fuente de electrones de emision de campo, procedimiento para la produccion de la misma, y uso de la misma. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6249080B1 (fr) |
| EP (1) | EP0913849B1 (fr) |
| KR (2) | KR100360993B1 (fr) |
| CN (1) | CN1121702C (fr) |
| AT (1) | ATE472167T1 (fr) |
| DE (1) | DE69841736D1 (fr) |
| DK (1) | DK0913849T3 (fr) |
| ES (1) | ES2345859T3 (fr) |
| SG (1) | SG67550A1 (fr) |
| TW (1) | TW391022B (fr) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6455344B1 (en) * | 1998-05-19 | 2002-09-24 | National Science Council | Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector |
| US6794805B1 (en) * | 1998-05-26 | 2004-09-21 | Matsushita Electric Works, Ltd. | Field emission electron source, method of producing the same, and use of the same |
| KR100338140B1 (ko) * | 1998-09-25 | 2002-05-24 | 이마이 기요스케 | 전계 방사형 전자원 |
| TW436837B (en) | 1998-11-16 | 2001-05-28 | Matsushita Electric Works Ltd | Field emission-type electron source and manufacturing method thereof and display using the electron source |
| US6765342B1 (en) | 1999-10-18 | 2004-07-20 | Matsushita Electric Work, Ltd. | Field emission-type electron source and manufacturing method thereof |
| KR100374782B1 (ko) * | 1999-10-18 | 2003-03-04 | 마츠시다 덴코 가부시키가이샤 | 전계 방출형 전자원 및 그 제조방법 |
| JP3789064B2 (ja) * | 1999-10-27 | 2006-06-21 | パイオニア株式会社 | 電子放出素子 |
| TW497278B (en) * | 2000-03-24 | 2002-08-01 | Japan Science & Tech Corp | Method for generating trajectory electron, trajectory electron solid state semiconductor element |
| GB0025634D0 (en) * | 2000-10-18 | 2000-12-06 | Smiths Industries Plc | Light-emitting devices and displays |
| US6815875B2 (en) | 2001-02-27 | 2004-11-09 | Hewlett-Packard Development Company, L.P. | Electron source having planar emission region and focusing structure |
| EP1320116A1 (fr) * | 2001-04-24 | 2003-06-18 | Matsushita Electric Works, Ltd. | Source d'electrons a emission de champ et son procede de production |
| US6911768B2 (en) * | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
| US6753544B2 (en) | 2001-04-30 | 2004-06-22 | Hewlett-Packard Development Company, L.P. | Silicon-based dielectric tunneling emitter |
| US6771010B2 (en) * | 2001-04-30 | 2004-08-03 | Hewlett-Packard Development Company, L.P. | Silicon emitter with low porosity heavily doped contact layer |
| US6621096B2 (en) * | 2001-05-21 | 2003-09-16 | Hewlett-Packard Develpoment Company, L.P. | Device isolation process flow for ARS system |
| US6753196B2 (en) * | 2001-06-26 | 2004-06-22 | Matsushita Electric Works, Ltd. | Method of and apparatus for manufacturing field emission-type electron source |
| US6672925B2 (en) * | 2001-08-17 | 2004-01-06 | Motorola, Inc. | Vacuum microelectronic device and method |
| US6920680B2 (en) * | 2001-08-28 | 2005-07-26 | Motorola, Inc. | Method of making vacuum microelectronic device |
| KR100491305B1 (ko) * | 2001-09-25 | 2005-05-24 | 마츠시다 덴코 가부시키가이샤 | 전계방사형 전자원 |
| DE60236835D1 (de) | 2001-10-29 | 2010-08-12 | Panasonic Elec Works Co Ltd | Elektronenquelle des Feldemissionstyps und Verfahren zum Anlegen einer Vorspannung |
| US6558968B1 (en) * | 2001-10-31 | 2003-05-06 | Hewlett-Packard Development Company | Method of making an emitter with variable density photoresist layer |
| US6703252B2 (en) | 2002-01-31 | 2004-03-09 | Hewlett-Packard Development Company, L.P. | Method of manufacturing an emitter |
| US6852554B2 (en) | 2002-02-27 | 2005-02-08 | Hewlett-Packard Development Company, L.P. | Emission layer formed by rapid thermal formation process |
| JP4285684B2 (ja) * | 2002-03-08 | 2009-06-24 | パナソニック電工株式会社 | 量子デバイスおよびその製造方法 |
| US7361313B2 (en) * | 2003-02-18 | 2008-04-22 | Intel Corporation | Methods for uniform metal impregnation into a nanoporous material |
| US6989897B2 (en) * | 2002-06-12 | 2006-01-24 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
| US6970239B2 (en) * | 2002-06-12 | 2005-11-29 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
| US7002609B2 (en) * | 2002-11-07 | 2006-02-21 | Brother International Corporation | Nano-structure based system and method for charging a photoconductive surface |
| KR100750983B1 (ko) * | 2002-12-27 | 2007-08-22 | 마츠시다 덴코 가부시키가이샤 | 전계방사형 전자원과 이를 제조하는 방법 |
| JP2004265603A (ja) * | 2003-01-14 | 2004-09-24 | Sharp Corp | 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法 |
| JP4216112B2 (ja) * | 2003-04-21 | 2009-01-28 | シャープ株式会社 | 電子放出素子およびそれを用いた画像形成装置 |
| US20060132050A1 (en) * | 2004-12-18 | 2006-06-22 | Samsung Sdi Co., Ltd. | Display device |
| KR100687904B1 (ko) * | 2005-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 및 그 제조방법 |
| JP2007051996A (ja) * | 2005-08-19 | 2007-03-01 | Ngk Insulators Ltd | 電子線照射装置 |
| KR100719580B1 (ko) * | 2005-11-22 | 2007-05-17 | 삼성에스디아이 주식회사 | 평판 디스플레이 장치 |
| KR100787435B1 (ko) * | 2005-11-22 | 2007-12-26 | 삼성에스디아이 주식회사 | 기체 여기 발광 소자 및 평판 표시장치 |
| KR100730171B1 (ko) * | 2005-11-23 | 2007-06-19 | 삼성에스디아이 주식회사 | 디스플레이 장치 및 그 제조방법 |
| US20070188090A1 (en) * | 2006-02-15 | 2007-08-16 | Matsushita Toshiba Picture Display Co., Ltd. | Field-emission electron source apparatus |
| US7825591B2 (en) * | 2006-02-15 | 2010-11-02 | Panasonic Corporation | Mesh structure and field-emission electron source apparatus using the same |
| US20080128608A1 (en) * | 2006-11-06 | 2008-06-05 | The Scripps Research Institute | Nanostructure-initiator mass spectrometry |
| CN101609777B (zh) * | 2009-07-20 | 2011-09-28 | 浙江师范大学 | 多孔硅场发射发光二极管及其制作技术 |
| US8970113B2 (en) * | 2011-12-29 | 2015-03-03 | Elwha Llc | Time-varying field emission device |
| US8928228B2 (en) | 2011-12-29 | 2015-01-06 | Elwha Llc | Embodiments of a field emission device |
| US9349562B2 (en) | 2011-12-29 | 2016-05-24 | Elwha Llc | Field emission device with AC output |
| US8946992B2 (en) | 2011-12-29 | 2015-02-03 | Elwha Llc | Anode with suppressor grid |
| US9018861B2 (en) | 2011-12-29 | 2015-04-28 | Elwha Llc | Performance optimization of a field emission device |
| US8692226B2 (en) | 2011-12-29 | 2014-04-08 | Elwha Llc | Materials and configurations of a field emission device |
| US9171690B2 (en) | 2011-12-29 | 2015-10-27 | Elwha Llc | Variable field emission device |
| US9646798B2 (en) | 2011-12-29 | 2017-05-09 | Elwha Llc | Electronic device graphene grid |
| US8575842B2 (en) | 2011-12-29 | 2013-11-05 | Elwha Llc | Field emission device |
| US9659735B2 (en) | 2012-09-12 | 2017-05-23 | Elwha Llc | Applications of graphene grids in vacuum electronics |
| US9659734B2 (en) | 2012-09-12 | 2017-05-23 | Elwha Llc | Electronic device multi-layer graphene grid |
| US11164733B2 (en) | 2015-10-07 | 2021-11-02 | The Regents Of The University Of California | Fabrication of mass spectrometry surface |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3665241A (en) | 1970-07-13 | 1972-05-23 | Stanford Research Inst | Field ionizer and field emission cathode structures and methods of production |
| US5430300A (en) * | 1991-07-18 | 1995-07-04 | The Texas A&M University System | Oxidized porous silicon field emission devices |
| DE4231310C1 (de) * | 1992-09-18 | 1994-03-24 | Siemens Ag | Verfahren zur Herstellung eines Bauelementes mit porösem Silizium |
| JPH06338631A (ja) * | 1993-03-29 | 1994-12-06 | Canon Inc | 発光素子及びその製造方法 |
| JP3226745B2 (ja) | 1995-03-09 | 2001-11-05 | 科学技術振興事業団 | 半導体冷電子放出素子及びこれを用いた装置 |
| JP3281533B2 (ja) * | 1996-03-26 | 2002-05-13 | パイオニア株式会社 | 冷電子放出表示装置及び半導体冷電子放出素子 |
-
1998
- 1998-08-11 TW TW087113202A patent/TW391022B/zh not_active IP Right Cessation
- 1998-08-25 CN CN98116965A patent/CN1121702C/zh not_active Expired - Fee Related
- 1998-08-26 AT AT98116103T patent/ATE472167T1/de active
- 1998-08-26 EP EP98116103A patent/EP0913849B1/fr not_active Expired - Lifetime
- 1998-08-26 ES ES98116103T patent/ES2345859T3/es not_active Expired - Lifetime
- 1998-08-26 KR KR10-1998-0034727A patent/KR100360993B1/ko not_active IP Right Cessation
- 1998-08-26 US US09/140,647 patent/US6249080B1/en not_active Expired - Lifetime
- 1998-08-26 DK DK98116103.7T patent/DK0913849T3/da active
- 1998-08-26 DE DE69841736T patent/DE69841736D1/de not_active Expired - Lifetime
- 1998-08-27 SG SG1998003332A patent/SG67550A1/en unknown
-
2002
- 2002-07-19 KR KR1020020042609A patent/KR20020067686A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| ATE472167T1 (de) | 2010-07-15 |
| EP0913849B1 (fr) | 2010-06-23 |
| KR19990036606A (ko) | 1999-05-25 |
| US6249080B1 (en) | 2001-06-19 |
| EP0913849A3 (fr) | 1999-05-19 |
| TW391022B (en) | 2000-05-21 |
| KR20020067686A (ko) | 2002-08-23 |
| SG67550A1 (en) | 1999-09-21 |
| KR100360993B1 (ko) | 2003-01-24 |
| CN1215907A (zh) | 1999-05-05 |
| CN1121702C (zh) | 2003-09-17 |
| DE69841736D1 (de) | 2010-08-05 |
| DK0913849T3 (da) | 2010-10-11 |
| EP0913849A2 (fr) | 1999-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2345859T3 (es) | Fuente de electrones de emision de campo, procedimiento para la produccion de la misma, y uso de la misma. | |
| ES2213320T3 (es) | Fuente de electrones por emision por efecto de campo. | |
| US6844664B2 (en) | Field emission electron source and production method thereof | |
| RU2432636C2 (ru) | Эмитирующее электроны устройство и панель отображения, включающая в себя такое устройство | |
| JP2987140B2 (ja) | 電界放射型電子源およびその製造方法および平面発光装置およびディスプレイ装置および固体真空デバイス | |
| JP2004146364A (ja) | 発光素子及びそれを具えるフィールドエミッションディスプレイ | |
| ES2372168T3 (es) | Red de fuentes electrónicas por emisión de campo y procedimiento de fabricación de la misma. | |
| EP1384244B1 (fr) | Emetteur par effet tunnel | |
| US20060214557A1 (en) | Light source | |
| JP2004125940A (ja) | 発光素子及びそれを具えるフィールドエミッションディスプレイ | |
| US7965024B2 (en) | Electron emission device and method of manufacturing the same | |
| US20080278062A1 (en) | Method of fabricating electron emission source, electron emission device, and electron emission display device including the electron emission device | |
| WO2002089168A2 (fr) | Emetteur a effet tunnel avec couche dielectrique a base de silicium | |
| US20050062390A1 (en) | Light emitting device | |
| JP2006278318A (ja) | 光源 | |
| JP3079086B2 (ja) | 電界放射型電子源の製造方法 | |
| JP3221623B2 (ja) | 冷陰極電子パルス放射装置 | |
| JP3508652B2 (ja) | 電界放射型電子源およびその製造方法 | |
| JP3332454B2 (ja) | 平面蛍光ランプ | |
| US7994696B2 (en) | Electron emission device, electron emission type backlight unit including the electron emission device, and method of manufacturing the electron emission device | |
| TWI353002B (en) | A field emission device and a field emission displ | |
| KR19990015280A (ko) | 3극관형 전계 방출 표시소자 | |
| KR20070079248A (ko) | 전자 방출 소자 | |
| JP2000138026A (ja) | 電界放射型電子源の製造方法および電界放射型電子源および平面発光装置およびディスプレイ装置 | |
| KR19990018949A (ko) | 3극관형전계방출표시소자 |