DE69841736D1 - Feldemissionselektronenquelle, Verfahren zu deren Herstellung und Verwendung derselben - Google Patents

Feldemissionselektronenquelle, Verfahren zu deren Herstellung und Verwendung derselben

Info

Publication number
DE69841736D1
DE69841736D1 DE69841736T DE69841736T DE69841736D1 DE 69841736 D1 DE69841736 D1 DE 69841736D1 DE 69841736 T DE69841736 T DE 69841736T DE 69841736 T DE69841736 T DE 69841736T DE 69841736 D1 DE69841736 D1 DE 69841736D1
Authority
DE
Germany
Prior art keywords
field emission
electron source
emission electron
preparation
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69841736T
Other languages
English (en)
Inventor
Takuya Komoda
Nobuyoshi Koshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Panasonic Electric Works Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co Ltd filed Critical Panasonic Electric Works Co Ltd
Application granted granted Critical
Publication of DE69841736D1 publication Critical patent/DE69841736D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/312—Cold cathodes, e.g. field-emissive cathode having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
DE69841736T 1997-10-29 1998-08-26 Feldemissionselektronenquelle, Verfahren zu deren Herstellung und Verwendung derselben Expired - Lifetime DE69841736D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29710897 1997-10-29
JP6559298 1998-03-16

Publications (1)

Publication Number Publication Date
DE69841736D1 true DE69841736D1 (de) 2010-08-05

Family

ID=26406731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69841736T Expired - Lifetime DE69841736D1 (de) 1997-10-29 1998-08-26 Feldemissionselektronenquelle, Verfahren zu deren Herstellung und Verwendung derselben

Country Status (10)

Country Link
US (1) US6249080B1 (de)
EP (1) EP0913849B1 (de)
KR (2) KR100360993B1 (de)
CN (1) CN1121702C (de)
AT (1) ATE472167T1 (de)
DE (1) DE69841736D1 (de)
DK (1) DK0913849T3 (de)
ES (1) ES2345859T3 (de)
SG (1) SG67550A1 (de)
TW (1) TW391022B (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6455344B1 (en) * 1998-05-19 2002-09-24 National Science Council Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector
US6794805B1 (en) * 1998-05-26 2004-09-21 Matsushita Electric Works, Ltd. Field emission electron source, method of producing the same, and use of the same
KR100338140B1 (ko) * 1998-09-25 2002-05-24 이마이 기요스케 전계 방사형 전자원
TW436837B (en) * 1998-11-16 2001-05-28 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof and display using the electron source
KR100374782B1 (ko) * 1999-10-18 2003-03-04 마츠시다 덴코 가부시키가이샤 전계 방출형 전자원 및 그 제조방법
US6765342B1 (en) 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
JP3789064B2 (ja) * 1999-10-27 2006-06-21 パイオニア株式会社 電子放出素子
TW497278B (en) * 2000-03-24 2002-08-01 Japan Science & Tech Corp Method for generating trajectory electron, trajectory electron solid state semiconductor element
GB0025634D0 (en) * 2000-10-18 2000-12-06 Smiths Industries Plc Light-emitting devices and displays
US6815875B2 (en) 2001-02-27 2004-11-09 Hewlett-Packard Development Company, L.P. Electron source having planar emission region and focusing structure
EP1320116A1 (de) * 2001-04-24 2003-06-18 Matsushita Electric Works, Ltd. Feldemissions-elektronenquelle und verfahren zu ihrer herstellung
US6771010B2 (en) 2001-04-30 2004-08-03 Hewlett-Packard Development Company, L.P. Silicon emitter with low porosity heavily doped contact layer
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6753544B2 (en) 2001-04-30 2004-06-22 Hewlett-Packard Development Company, L.P. Silicon-based dielectric tunneling emitter
US6621096B2 (en) * 2001-05-21 2003-09-16 Hewlett-Packard Develpoment Company, L.P. Device isolation process flow for ARS system
US6753196B2 (en) * 2001-06-26 2004-06-22 Matsushita Electric Works, Ltd. Method of and apparatus for manufacturing field emission-type electron source
US6672925B2 (en) * 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
US6920680B2 (en) * 2001-08-28 2005-07-26 Motorola, Inc. Method of making vacuum microelectronic device
KR100491305B1 (ko) * 2001-09-25 2005-05-24 마츠시다 덴코 가부시키가이샤 전계방사형 전자원
KR100497292B1 (ko) 2001-10-29 2005-06-28 마츠시다 덴코 가부시키가이샤 전계방사형 전자원 및 그 구동방법
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US6703252B2 (en) * 2002-01-31 2004-03-09 Hewlett-Packard Development Company, L.P. Method of manufacturing an emitter
US6852554B2 (en) * 2002-02-27 2005-02-08 Hewlett-Packard Development Company, L.P. Emission layer formed by rapid thermal formation process
KR100625836B1 (ko) * 2002-03-08 2006-09-20 마츠시다 덴코 가부시키가이샤 양자장치
US6989897B2 (en) * 2002-06-12 2006-01-24 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
US6970239B2 (en) * 2002-06-12 2005-11-29 Intel Corporation Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate
US7361313B2 (en) * 2003-02-18 2008-04-22 Intel Corporation Methods for uniform metal impregnation into a nanoporous material
US7002609B2 (en) * 2002-11-07 2006-02-21 Brother International Corporation Nano-structure based system and method for charging a photoconductive surface
KR100750983B1 (ko) * 2002-12-27 2007-08-22 마츠시다 덴코 가부시키가이샤 전계방사형 전자원과 이를 제조하는 방법
JP2004265603A (ja) * 2003-01-14 2004-09-24 Sharp Corp 電子放出装置および電子放出素子クリーニング装置および電子放出素子クリーニング方法
JP4216112B2 (ja) * 2003-04-21 2009-01-28 シャープ株式会社 電子放出素子およびそれを用いた画像形成装置
US20060132050A1 (en) * 2004-12-18 2006-06-22 Samsung Sdi Co., Ltd. Display device
KR100687904B1 (ko) * 2005-06-30 2007-02-27 주식회사 하이닉스반도체 반도체소자의 캐패시터 및 그 제조방법
JP2007051996A (ja) * 2005-08-19 2007-03-01 Ngk Insulators Ltd 電子線照射装置
KR100719580B1 (ko) * 2005-11-22 2007-05-17 삼성에스디아이 주식회사 평판 디스플레이 장치
KR100787435B1 (ko) * 2005-11-22 2007-12-26 삼성에스디아이 주식회사 기체 여기 발광 소자 및 평판 표시장치
KR100730171B1 (ko) * 2005-11-23 2007-06-19 삼성에스디아이 주식회사 디스플레이 장치 및 그 제조방법
US20070188090A1 (en) * 2006-02-15 2007-08-16 Matsushita Toshiba Picture Display Co., Ltd. Field-emission electron source apparatus
US7825591B2 (en) * 2006-02-15 2010-11-02 Panasonic Corporation Mesh structure and field-emission electron source apparatus using the same
US20080128608A1 (en) * 2006-11-06 2008-06-05 The Scripps Research Institute Nanostructure-initiator mass spectrometry
CN101609777B (zh) * 2009-07-20 2011-09-28 浙江师范大学 多孔硅场发射发光二极管及其制作技术
US8970113B2 (en) * 2011-12-29 2015-03-03 Elwha Llc Time-varying field emission device
US8946992B2 (en) 2011-12-29 2015-02-03 Elwha Llc Anode with suppressor grid
US9349562B2 (en) 2011-12-29 2016-05-24 Elwha Llc Field emission device with AC output
US8692226B2 (en) 2011-12-29 2014-04-08 Elwha Llc Materials and configurations of a field emission device
US9171690B2 (en) 2011-12-29 2015-10-27 Elwha Llc Variable field emission device
US9646798B2 (en) 2011-12-29 2017-05-09 Elwha Llc Electronic device graphene grid
US8928228B2 (en) 2011-12-29 2015-01-06 Elwha Llc Embodiments of a field emission device
US9018861B2 (en) 2011-12-29 2015-04-28 Elwha Llc Performance optimization of a field emission device
US8575842B2 (en) 2011-12-29 2013-11-05 Elwha Llc Field emission device
US9659734B2 (en) 2012-09-12 2017-05-23 Elwha Llc Electronic device multi-layer graphene grid
US9659735B2 (en) 2012-09-12 2017-05-23 Elwha Llc Applications of graphene grids in vacuum electronics
US11164733B2 (en) 2015-10-07 2021-11-02 The Regents Of The University Of California Fabrication of mass spectrometry surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665241A (en) 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US5430300A (en) * 1991-07-18 1995-07-04 The Texas A&M University System Oxidized porous silicon field emission devices
DE4231310C1 (de) * 1992-09-18 1994-03-24 Siemens Ag Verfahren zur Herstellung eines Bauelementes mit porösem Silizium
JPH06338631A (ja) * 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
JP3226745B2 (ja) 1995-03-09 2001-11-05 科学技術振興事業団 半導体冷電子放出素子及びこれを用いた装置
JP3281533B2 (ja) * 1996-03-26 2002-05-13 パイオニア株式会社 冷電子放出表示装置及び半導体冷電子放出素子

Also Published As

Publication number Publication date
EP0913849A2 (de) 1999-05-06
KR20020067686A (ko) 2002-08-23
ATE472167T1 (de) 2010-07-15
EP0913849B1 (de) 2010-06-23
CN1215907A (zh) 1999-05-05
DK0913849T3 (da) 2010-10-11
CN1121702C (zh) 2003-09-17
KR100360993B1 (ko) 2003-01-24
SG67550A1 (en) 1999-09-21
US6249080B1 (en) 2001-06-19
KR19990036606A (ko) 1999-05-25
ES2345859T3 (es) 2010-10-04
TW391022B (en) 2000-05-21
EP0913849A3 (de) 1999-05-19

Similar Documents

Publication Publication Date Title
DE69841736D1 (de) Feldemissionselektronenquelle, Verfahren zu deren Herstellung und Verwendung derselben
DE69520126D1 (de) Elektronen emittierende Einrichtung und Herstellungsverfahren
ATE352858T1 (de) Feldemissions-elektronenquelle, verfahren zu deren herstellung und anzeigevorrichtung mit einer solchen elektronenquelle
DE69510624D1 (de) Elektronen-emittierende Vorrichtung, Elektronenquelle und Bilderzeugungsgerät sowie Verfahren zu deren Herstellung
DE69425230T2 (de) Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung
EP1014399A3 (de) Flexibler Dünnfilmkondensator und Herstellungsverfahren
CA2182647A1 (en) Electron-emitting device and electron source and image-forming apparatus using the same as well as method of manufacturing the same
EP2270858A3 (de) Licht-emittierende Vorrichtung und Herstellungsverfahren
DE69613030D1 (de) Material zur Verwendung bei der Herstellung von katalytischen Elektroden
DE69216710D1 (de) Diamantüberzogene Feldemissions-Elektronenquelle und Herstellungsverfahren dazu
EP1047095A3 (de) Feldemissionskathode und Verfahren zur Herstellung
ATE517427T1 (de) Feldemissionselektronenquellenmatrix und deren herstellungsverfahren
EP1003197A3 (de) Substrat für eine Elektronenquelle, Elektronenquelle und Bilderzeugungsgerät, und deren Herstellungsverfahren
EP0878819A3 (de) Elektronenemittierende Vorrichtung und diese verwendende Anzeigevorrichtung
DE50014127D1 (de) Piezoaktor mit einer elektrisch leitenden Mehrschichtfolie
EP1298747A3 (de) Verfahren und Vorrichtung zur Herstellung von Brennstoffzellenelektroden
EP0878820A3 (de) Elektronenemittierende Vorrichtung und diese verwendende Anzeigevorrichtung
KR900001074A (ko) 가스 레이저장치
KR910002055A (ko) 가스레이저 장치
EP0259878A3 (de) Elektronenemittierendes Element
ES2076479T3 (es) Proceso electroquimico.
KR940022637A (ko) 전자관용 음극
ES2057492T3 (es) Electrodos macizos de carbono poroso activado, su procedimiento de fabricacion y su utilizacion en un condensador con capa electrica doble.
KR920700523A (ko) 박막 el 소자
KR970017859A (ko) 필드 에미션 디바이스