DE69425230T2 - Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung - Google Patents

Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung

Info

Publication number
DE69425230T2
DE69425230T2 DE69425230T DE69425230T DE69425230T2 DE 69425230 T2 DE69425230 T2 DE 69425230T2 DE 69425230 T DE69425230 T DE 69425230T DE 69425230 T DE69425230 T DE 69425230T DE 69425230 T2 DE69425230 T2 DE 69425230T2
Authority
DE
Germany
Prior art keywords
electron
manufacturing
image forming
emitting device
forming device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425230T
Other languages
English (en)
Other versions
DE69425230D1 (de
Inventor
Takashi Noma
Seijiro Kato
Fumio Kishi
Hisaaki Kawade
Toshikazu Ohnishi
Michiyo Nishimura
Kumiko Uno
Takahiro Horiguchi
Masato Yamanobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34328093A external-priority patent/JP2909697B2/ja
Priority claimed from JP34593093A external-priority patent/JP3169109B2/ja
Priority claimed from JP18517794A external-priority patent/JP3185082B2/ja
Priority claimed from JP18516294A external-priority patent/JP2961494B2/ja
Priority claimed from JP20937794A external-priority patent/JPH0855571A/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority claimed from JP31327694A external-priority patent/JP2733452B2/ja
Publication of DE69425230D1 publication Critical patent/DE69425230D1/de
Application granted granted Critical
Publication of DE69425230T2 publication Critical patent/DE69425230T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/027—Manufacture of electrodes or electrode systems of cold cathodes of thin film cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/316—Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
    • H01J2201/3165—Surface conduction emission type cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
DE69425230T 1993-12-17 1994-12-16 Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung Expired - Fee Related DE69425230T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP34328093A JP2909697B2 (ja) 1993-12-17 1993-12-17 電子放出素子及びそれを用いた画像形成装置の製造方法
JP34593093A JP3169109B2 (ja) 1993-12-24 1993-12-24 電子放出素子および画像形成装置の製造方法
JP18517794A JP3185082B2 (ja) 1994-07-15 1994-07-15 電子放出素子、電子源及びそれを用いた画像形成装置の製造方法
JP18516294A JP2961494B2 (ja) 1994-07-15 1994-07-15 電子放出素子、電子源、及びそれを用いた画像形成装置の製造方法
JP20937794A JPH0855571A (ja) 1994-08-11 1994-08-11 近赤外線吸収性有機金属物質を用いる電子放出素子および画像形成装置の製造方法
JP31327694A JP2733452B2 (ja) 1994-12-16 1994-12-16 電子放出素子、電子源、画像形成装置の製造方法

Publications (2)

Publication Number Publication Date
DE69425230D1 DE69425230D1 (de) 2000-08-17
DE69425230T2 true DE69425230T2 (de) 2001-02-22

Family

ID=27553566

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425230T Expired - Fee Related DE69425230T2 (de) 1993-12-17 1994-12-16 Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung

Country Status (6)

Country Link
US (1) US5622634A (de)
EP (1) EP0658924B1 (de)
AT (1) ATE194727T1 (de)
AU (1) AU687926B2 (de)
CA (1) CA2138488C (de)
DE (1) DE69425230T2 (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2126535C (en) 1993-12-28 2000-12-19 Ichiro Nomura Electron beam apparatus and image-forming apparatus
AU710259B2 (en) * 1994-08-11 1999-09-16 Canon Kabushiki Kaisha Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus
US6246168B1 (en) 1994-08-29 2001-06-12 Canon Kabushiki Kaisha Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same
JP2916887B2 (ja) * 1994-11-29 1999-07-05 キヤノン株式会社 電子放出素子、電子源、画像形成装置の製造方法
JP2909719B2 (ja) * 1995-01-31 1999-06-23 キヤノン株式会社 電子線装置並びにその駆動方法
AU6626096A (en) * 1995-08-04 1997-03-05 Printable Field Emitters Limited Field electron emission materials and devices
JP3302278B2 (ja) 1995-12-12 2002-07-15 キヤノン株式会社 電子放出素子の製造方法並びに該製造方法を用いた電子源及び画像形成装置の製造方法
DE69738794D1 (de) * 1996-02-08 2008-08-14 Canon Kk Verfahren zur Herstellung einer elektronenemittierende Vorrichtung, einer Elektronenquelle und eines Bilderzeugungsgerätes und Verfahren zur Überprüfung der Herstellung
DE69825939T2 (de) * 1997-05-30 2005-09-15 Matsushita Electric Industrial Co., Ltd., Kadoma Anordnung mit Quanten-Schachteln
US6259422B1 (en) * 1997-08-06 2001-07-10 Canon Kabushiki Kaisha Method for producing image-forming apparatus
US6416374B1 (en) 1997-09-16 2002-07-09 Canon Kabushiki Kaisha Electron source manufacturing method, and image forming apparatus method
JP3320387B2 (ja) * 1998-09-07 2002-09-03 キヤノン株式会社 電子源の製造装置及び製造方法
JP3323847B2 (ja) 1999-02-22 2002-09-09 キヤノン株式会社 電子放出素子、電子源および画像形成装置の製造方法
JP3323849B2 (ja) * 1999-02-26 2002-09-09 キヤノン株式会社 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置
JP3492325B2 (ja) * 2000-03-06 2004-02-03 キヤノン株式会社 画像表示装置の製造方法
JP3483537B2 (ja) * 2000-03-06 2004-01-06 キヤノン株式会社 画像表示装置の製造方法
US6848961B2 (en) * 2000-03-16 2005-02-01 Canon Kabushiki Kaisha Method and apparatus for manufacturing image displaying apparatus
JP3793014B2 (ja) 2000-10-03 2006-07-05 キヤノン株式会社 電子源の製造装置、電子源の製造方法及び画像形成装置の製造方法
JP3744337B2 (ja) * 2000-10-16 2006-02-08 東海ゴム工業株式会社 紙送り用ローラ
US20020127386A1 (en) * 2001-02-06 2002-09-12 Miki Ogawa Thin film having porous structure and method for manufacturing porous structured materials
US6837768B2 (en) * 2001-03-05 2005-01-04 Canon Kabushiki Kaisha Method of fabricating electron source substrate and image forming apparatus
US6855937B2 (en) * 2001-05-18 2005-02-15 Canon Kabushiki Kaisha Image pickup apparatus
JP4551586B2 (ja) 2001-05-22 2010-09-29 キヤノン株式会社 電圧印加プローブ、電子源の製造装置及び製造方法
JP3890258B2 (ja) * 2001-05-28 2007-03-07 キヤノン株式会社 電子源の製造方法、および、電子源の製造装置
JP2003092061A (ja) 2001-09-17 2003-03-28 Canon Inc 電圧印加装置、電子源の製造装置及び製造方法
JP3647436B2 (ja) * 2001-12-25 2005-05-11 キヤノン株式会社 電子放出素子、電子源、画像表示装置、及び電子放出素子の製造方法
JP3634850B2 (ja) * 2002-02-28 2005-03-30 キヤノン株式会社 電子放出素子、電子源および画像形成装置の製造方法
JP2004227821A (ja) * 2003-01-21 2004-08-12 Canon Inc 通電処理装置および電子源の製造装置
CN100419939C (zh) * 2003-01-21 2008-09-17 佳能株式会社 通电处理方法和电子源衬底的制造方法
US7226331B2 (en) * 2003-10-07 2007-06-05 Canon Kabushiki Kaisha Electron source manufacturing apparatus and electron source manufacturing method
US7445535B2 (en) * 2003-12-11 2008-11-04 Canon Kabushiki Kaisha Electron source producing apparatus and method
US7547978B2 (en) * 2004-06-14 2009-06-16 Micron Technology, Inc. Underfill and encapsulation of semiconductor assemblies with materials having differing properties
US7547620B2 (en) * 2004-09-01 2009-06-16 Canon Kabushiki Kaisha Film pattern producing method, and producing method for electronic device, electron-emitting device and electron source substrate utilizing the same
US7235431B2 (en) 2004-09-02 2007-06-26 Micron Technology, Inc. Methods for packaging a plurality of semiconductor dice using a flowable dielectric material
JP4689404B2 (ja) * 2005-08-15 2011-05-25 キヤノン株式会社 基板処理装置及びこれを用いた基板の処理方法、電子源基板の処理装置及びこれを用いた電子源基板の処理方法
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US20080300918A1 (en) * 2007-05-29 2008-12-04 Commercenet Consortium, Inc. System and method for facilitating hospital scheduling and support
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US7923298B2 (en) * 2007-09-07 2011-04-12 Micron Technology, Inc. Imager die package and methods of packaging an imager die on a temporary carrier
US8759671B2 (en) * 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8440467B2 (en) * 2007-09-28 2013-05-14 William Marsh Rice University Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) * 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US7855089B2 (en) * 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US8383450B2 (en) * 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US7863074B2 (en) * 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US7947524B2 (en) * 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8741689B2 (en) * 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) * 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
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CN115305473B (zh) * 2022-07-18 2024-02-23 中国科学院空天信息创新研究院 适用于真空器件的金属零件处理装置及处理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3853744T2 (de) * 1987-07-15 1996-01-25 Canon Kk Elektronenemittierende Vorrichtung.
JP2704731B2 (ja) * 1987-07-28 1998-01-26 キヤノン株式会社 電子放出素子及びその駆動方法
JP2810444B2 (ja) * 1988-10-02 1998-10-15 キヤノン株式会社 結晶材料の微細加工方法
JPH02223141A (ja) * 1989-02-23 1990-09-05 Matsushita Electric Ind Co Ltd 画像表示装置およびその製造法
JP3023712B2 (ja) * 1991-04-08 2000-03-21 キヤノン株式会社 表面伝導形電子放出素子の製造方法、電子放出装置の製造方法

Also Published As

Publication number Publication date
DE69425230D1 (de) 2000-08-17
US5622634A (en) 1997-04-22
EP0658924A1 (de) 1995-06-21
AU687926B2 (en) 1998-03-05
AU8157194A (en) 1995-06-22
ATE194727T1 (de) 2000-07-15
CA2138488C (en) 1999-09-07
EP0658924B1 (de) 2000-07-12
CA2138488A1 (en) 1995-06-18

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee