TWI353002B - A field emission device and a field emission displ - Google Patents

A field emission device and a field emission displ Download PDF

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TWI353002B
TWI353002B TW93133748A TW93133748A TWI353002B TW I353002 B TWI353002 B TW I353002B TW 93133748 A TW93133748 A TW 93133748A TW 93133748 A TW93133748 A TW 93133748A TW I353002 B TWI353002 B TW I353002B
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field emission
wire
cathode
substrate
emission display
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TW93133748A
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TW200615999A (en
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Yang Wei
Liang Liu
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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1353002 100年03月18日修正替換t 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明涉及一種場發射裝置及具有該裝置之場發射顯示 【先前技術】 [證]場發射顯示器係繼陰極射線管(CRT)顯示器及液晶(LCD) 顯示器之後,最具發展潛力之下一代新興顯示器。相對 于現有之顯示器’場發射顯示器具有顯示效果好、視角 大、功耗小以及體積小等優點,尤其係基於奈米碳管之 場發射顯示器,即奈米碳管場發射顯示器(CNT-FED), 近年來越來越受到重視❶ [0003]奈米碳管係一種新型碳材料,由曰本研究人員I丨j丨ma于 .. ... ' . 1991 年發現’請參見"Helical Microtubules of Graphitic Carbon", Iijima, Nature, vol.354, P56 C1991)。奈米碳管具有極優異之導電性能,且其具 有幾乎接近理論極限之尖端表面尖端表面積愈小,場 曰強因數愈大,其局部電場聲強:).,所以奈米碳管係已知 之最好場發射材料,它具有極低之場發射開啓電場(約2 伏/微米),可傳輸極大之發射電流密度,並且發射電流 極穩定,因而非常適合做場發射顯示器之發射體。 [0004]1353002 Modified on March 18, 100, the following is a description of the invention: [Technical field] [0001] The present invention relates to a field emission device and a field emission display having the same [previous technique] [certification] field emission display Following the cathode ray tube (CRT) display and liquid crystal (LCD) display, the next generation of emerging displays with the most potential development. Compared with the existing display, the field emission display has the advantages of good display effect, large viewing angle, low power consumption and small volume, especially based on the field emission display of the carbon nanotubes, that is, the carbon nanotube field emission display (CNT-FED) In recent years, it has received more and more attention. [0003] Nano carbon tube is a new type of carbon material, which was discovered by the researcher I丨j丨ma.. ' ' . 1991 Found 'see "Helical Microtubules of Graphitic Carbon", Iijima, Nature, vol. 354, P56 C1991). The carbon nanotubes have excellent electrical conductivity, and the tip surface of the tip surface is almost close to the theoretical limit. The smaller the surface area, the larger the field strength factor, and the local electric field sound intensity:). Therefore, the carbon nanotube system is known. The best field emission material, which has a very low field emission on-state electric field (about 2 volts/micron), can transmit extremely large emission current density, and has extremely stable emission current, making it ideal for use as a field emission display emitter. [0004]

一般而言,場發射顯示器之結構可以分為二極型與三極 聖所明—極型即包括有陽極及陰極之場發射結構,請 參閲2GQ2年9月1G日公告之美國專利第6, 448, 709號。 此、-〇構由於需要施加高電壓,而且均勻性以及電子發射 、制驅動電路成本南,基本上不適合高解析度顯 093133748 表單編號A0101 第4頁/共23頁 1003091362-0 1353002 [0005] [0006] [0007] [0008] 093133748 |100年03月18日^^^| 不杰之實際應用。三極型結構則係於二極型基礎上之改 進’增加有拇極來控制電子發射,可以實現於較低電壓 條件下發出電子’而且電子發射容易通過柵極來精確控 制。 4參閱第一圖,如2003年9月9曰公告之美國專利第 6, 617, 798號所揭示之三極型場發射平板顯示器,其包 …邊板8、陰極16 '形成於陰極Μ表面之電子發射體μ 、柵板6 (上下表面上形成有柵極20及34)以及面板1〇, 其中背板8、栅板6以及面板10之間用阻隔壁2及4支撐並 隔開一定距離,柵板6上形成有多個通孔6a,面板1〇包括 陽極層及縣層。使_極、柵極 20、34及陰極16上,電子出,並穿 過通孔6a,然後於陽極形成之電場作甩下▲加速到達陽極 及螢光層,激發螢光層發出可見光。 惟上述場發射顯示器中,奸干形成於平面之 陰極層16上’相㈣射_,娜g近,場遮罩效 應很強,因此發射預定電流★需娜強度大,從而不利 於降低場發射顯示器之成本。 【發明内容】 本發明要解決之第-個技術問題係提供-種電子發射體 之間場遮罩效應弱之場發射裝置。 本發明要解決之第二個技術問題係提供—種具有上述場 發射裝置之場發射顯示器。 本發明解決上述第-個技術問題之技術方案係提供一 表單編號A0101 種 第5頁/共23頁 1003091362-0 [0009] 1353002 100年03月18日梭正替换頁 場發射裝置,其包括>基板、形成於基板上之多個陰極 .以及形成於陰極表面之多個電子發射體,其中形成有多 個電子發射體之陰極表面為凸起之曲面。 [0010] 進一步的,該陰極為固定於基板上之圓柱形金屬絲。 » [0011] 更進一步的,該金屬絲兩端形成有金屬膜,金屬絲固定 於該金屬膜上。In general, the structure of a field emission display can be divided into a two-pole and three-pole sanctuary-polar type, that is, a field emission structure including an anode and a cathode. Please refer to the US Patent No. 6 published on September 1st, 2GQ2. , 448, 709. This, the structure is required to apply high voltage, and the uniformity and the cost of electron emission and manufacturing circuit are basically not suitable for high resolution. 093133748 Form No. A0101 Page 4 / Total 23 Page 1003091362-0 1353002 [0005] [ 0006] [0007] [0008] 093133748 | March 18, 100 ^^^| The practical application of the Jie. The tripolar structure is based on the improvement of the dipole type. The addition of the thumb pole to control the electron emission enables electrons to be emitted at a lower voltage and the electron emission is easily controlled by the gate. 4 Referring to the first figure, a three-pole field emission flat panel display as disclosed in U.S. Patent No. 6,617,798, issued on Sep. 9, 2003, which is incorporated herein by reference. The electron emitter μ, the grid 6 (the gate electrodes 20 and 34 are formed on the upper and lower surfaces), and the panel 1〇, wherein the back panel 8, the grid 6 and the panel 10 are supported by the barrier walls 2 and 4 and are separated by a certain distance. A plurality of through holes 6a are formed in the grid 6, and the panel 1 includes an anode layer and a county layer. The _ pole, the gate electrodes 20, 34 and the cathode 16 are electron-extracted and passed through the through hole 6a, and then accelerated to the anode and the phosphor layer by the electric field formed by the anode, and the excitation phosphor layer emits visible light. However, in the above-mentioned field emission display, the sinus is formed on the cathode layer 16 of the plane, and the phase (m) is near, and the field mask effect is very strong, so that the predetermined current is required to be emitted, and the intensity is large, which is disadvantageous for reducing the field emission. The cost of the display. SUMMARY OF THE INVENTION The first technical problem to be solved by the present invention is to provide a field emission device in which the field mask effect is weak between electron emitters. A second technical problem to be solved by the present invention is to provide a field emission display having the above field emission device. The technical solution of the present invention to solve the above first technical problem is to provide a form number A0101, a fifth page, a total of 23 pages, 1003091362-0 [0009] 1353002, a March 18th, 100th shuttle replacement page field transmitting device, including &gt a substrate, a plurality of cathodes formed on the substrate, and a plurality of electron emitters formed on the surface of the cathode, wherein a cathode surface on which the plurality of electron emitters are formed is a convex curved surface. [0010] Further, the cathode is a cylindrical wire fixed on the substrate. [0011] Further, a metal film is formed on both ends of the wire, and the wire is fixed on the metal film.

[0012] 本發明解決上述第二個技術問題之第一技術方案係提供 一種場發射顯示器,其包括一場發射裝置、一陽極及位 於二者間之一栅極,該場發射裝置包括一基板、形成於 基板上之多個陰極以及形成於陰辑表面之多個電子發射 體,其中形成有多個電子發射體之陰極表面為凸起之曲 面。 [0013] 進一步的,該陰極為固定於基板上之圓柱形金屬絲。[0012] The first technical solution of the present invention to solve the above second technical problem is to provide a field emission display comprising a field emission device, an anode and a gate between the two, the field emission device comprising a substrate, a plurality of cathodes formed on the substrate and a plurality of electron emitters formed on the surface of the negative surface, wherein the cathode surface on which the plurality of electron emitters are formed is a convex curved surface. [0013] Further, the cathode is a cylindrical wire fixed on the substrate.

[0014] 更進一步的,該金屬絲兩端形成有金屬膜,金屬絲固定 於該金屬膜上。 [0015] 本發明解決上述第二個技術問題之第二技術方案是提供 一種場發射顯示器,其包括一場發射裝置、一陽極及一 栅極,該場發射裝置包括一基板、形成於基板一側表面 之多個陰極以及形成於陰極表面之多個電子發射體,該 陽極位於該電子發射體一側並與其隔開一定距離,該柵 極位於基板背侧,與陰極絕緣,其中形成有多個電子發 射體之陰極表面為凸起之曲面。 [0016] 進一步的,該陰極為固定於基板上之圓柱形金屬絲。 093133748 表單編號A0101 第6頁/共23頁 1003091362-0 1353002 - 100年03月18日修正替换頁 [0017] 更進一步的,該金屬絲兩端形成有金屬膜,金屬絲固定 於該金屬膜上。 [0018] 與先前技術相比,本發明具有以下優點:陰極表面為凸 起之曲面,使得形成於該表面之多個電子發射體呈發散 狀分佈,從而使得相鄰電子發射體之尖端之間距離增大 ,場遮罩效應減弱,從而使獲得同樣電流需要之電場強 度降低,可降低驅動成本。 [0019] 進一步之優點在於金屬絲作陰極易實現批量生産,成本 降低;金屬絲兩端形成金屬膜,能更好地固定金屬絲, 並有利於從器件中引出陰極。 [0020] - 【實施方式】 4' 下面結合附圖來說明本發明培提供i 場發射顯 示器: [0021] 如第二圖所示,本發明第一實施例所提供之場發射顯示 器之分解圖,該場發射顯未器包括一場-發射裝置100,陽 極板300以及位於二者間之拇揮板20 0 :,其中場發射裝置 100包括絕緣玻璃基板101,形成於基板101上之金屬膜 102,兩端分別固定於金屬膜102上之金屬絲103,以及 基本垂直立於金屬絲103表面上之電子發射體104。該金 屬絲103即為陰極。該電子發射體104包括奈米碳管、金 剛石、矽奈米線、金屬尖端等。 [0022] 本實施例中電子發射體104為奈米碳管,該奈米碳管可採 用化學氣相沈積法生長於金屬絲103表面,亦可以採用電 泳等方法形成於金屬絲103表面,使得奈米碳管之軸向方 093133748 表單編號A0101 第7頁/共23頁 1003091362-0 1353002 100年03月18日梭正替换頁 向與金屬絲103表面之法線方向基本一致,即奈米碳管基 本垂直於金屬絲103表面。[0014] Further, a metal film is formed on both ends of the wire, and the wire is fixed on the metal film. [0015] The second technical solution of the present invention to solve the above second technical problem is to provide a field emission display comprising a field emission device, an anode and a gate, the field emission device comprising a substrate formed on one side of the substrate a plurality of cathodes on the surface and a plurality of electron emitters formed on the surface of the cathode, the anode being located on a side of the electron emitter and spaced apart therefrom, the gate being located on the back side of the substrate and insulated from the cathode, wherein a plurality of electrodes are formed The cathode surface of the electron emitter is a convex curved surface. [0016] Further, the cathode is a cylindrical wire fixed on the substrate. 093133748 Form No. A0101 Page 6 of 23 1003091362-0 1353002 - Corrected replacement page on March 18, 100 [0017] Further, a metal film is formed on both ends of the wire, and the wire is fixed on the metal film . [0018] Compared with the prior art, the present invention has the following advantages: the cathode surface is a convex curved surface, so that a plurality of electron emitters formed on the surface are distributed in a divergent manner, so that between the tips of adjacent electron emitters As the distance increases, the field mask effect is weakened, so that the electric field strength required to obtain the same current is reduced, and the driving cost can be reduced. [0019] A further advantage is that the wire is easy to realize mass production and the cost is reduced; the metal film is formed at both ends of the wire, which can better fix the wire and facilitate the extraction of the cathode from the device. [0020] [Embodiment] 4' The following description of the present invention provides an i field emission display in conjunction with the accompanying drawings: [0021] As shown in the second figure, an exploded view of the field emission display provided by the first embodiment of the present invention The field emission display device includes a field-emitting device 100, an anode plate 300, and a thumb-and-fork plate 20 0 therebetween, wherein the field emission device 100 includes an insulating glass substrate 101, and the metal film 102 formed on the substrate 101 The wire 103 fixed to the metal film 102 at both ends, and the electron emitter 104 standing substantially perpendicularly on the surface of the wire 103. The metal wire 103 is a cathode. The electron emitter 104 includes a carbon nanotube, a diamond, a nanowire, a metal tip, and the like. [0022] In this embodiment, the electron emitter 104 is a carbon nanotube. The carbon nanotube may be grown on the surface of the wire 103 by chemical vapor deposition, or may be formed on the surface of the wire 103 by electrophoresis or the like. The axial direction of the carbon nanotubes 093133748 Form No. A0101 Page 7 / Total 23 pages 1003091362-0 1353002 On March 18, 100, the shuttle replacement page is basically the same as the normal direction of the surface of the wire 103, ie nano carbon The tube is substantially perpendicular to the surface of the wire 103.

[0023] 該金屬絲103可以為金絲、鎳絲、不鏽鋼絲等金屬絲,直 徑為10微米至數百微米,可根據實際需要具體選定。本 實施例中採用鎳絲,直徑為50微米。該金屬絲103為圓柱 形,其形成有電子發射體104之表面係指圓柱側表面,該 表面為一曲面,上述基本垂直立於該表面上之電子發射 體104呈發散狀分佈,其相鄰電子發射體104之尖端彼此 分離,場遮罩效應較弱,使獲得同樣之電流需要之電場 強度降低,從而可降低驅動成本。 [0024] 形成於基板101上之金屬膜102與金屬絲103材料相同, 可通過點焊將金屬絲103之兩端焊於金屬膜102上,固定 金屬絲103,另外該金屬膜102還作為陰極接線頭·,將陰 極從器件中引出。 [0025] 另外,也可以於基板101表面印刷形成一層薄玻璃漿料,[0023] The wire 103 may be a wire such as a gold wire, a nickel wire or a stainless steel wire, and has a diameter of 10 micrometers to several hundreds micrometers, and may be specifically selected according to actual needs. In the present embodiment, a nickel wire was used, and the diameter was 50 μm. The wire 103 is cylindrical, and the surface on which the electron emitter 104 is formed refers to a cylindrical side surface, the surface is a curved surface, and the electron emitters 104 standing substantially perpendicularly on the surface are distributed in a divergent manner, adjacent thereto. The tips of the electron emitters 104 are separated from each other, and the field mask effect is weak, so that the electric field strength required to obtain the same current is lowered, thereby reducing the driving cost. [0024] The metal film 102 formed on the substrate 101 is the same material as the wire 103, and both ends of the wire 103 can be soldered to the metal film 102 by spot welding to fix the wire 103, and the metal film 102 also serves as a cathode. Wiring head · Take the cathode out of the device. [0025] In addition, a thin glass paste may be formed on the surface of the substrate 101.

將金屬絲103直接固定於基板ί〇1上,金屬絲103之兩端 . 延長即可直接作為陰極引線。當然1於用玻璃漿料固定 金屬絲103之情況下,仍然可以再設置金屬膜102點焊固 定金屬絲103之兩端,將金屬絲103固定得更加牢固。 [0026] 另外,基板101上還設置有由絕緣材料組成之阻隔壁105 ,其分佈於相鄰金屬絲之間,用於支撐柵極板200,並使 柵極板200與場發射裝置100隔開一定距離且絕緣。該阻 隔壁105可以用傳統之絲網印刷方法形成,其形狀可以如 第二圖中所示為一長條,但也可以為多個柱體,形狀不 093133748 表單編號A0101 第8頁/共23頁 1003091362-0 1353002 __ 100年03月18日修正替換頁 限。其由絕緣材料組成、能支撐栅極板並將栅極板與場 發射裝置隔開一定距離即可。本實施例中採用透明玻璃 作為阻隔壁1〇5。 [0027] [0028]The wire 103 is directly fixed on the substrate 〇1, and the ends of the wire 103 are extended to directly serve as a cathode lead. Of course, in the case where the wire 103 is fixed by the glass paste, the metal film 102 can be further provided with the both ends of the wire 103 fixed, and the wire 103 can be fixed more firmly. In addition, the substrate 101 is further provided with a barrier wall 105 composed of an insulating material distributed between adjacent wires for supporting the gate plate 200 and separating the gate plate 200 from the field emission device 100. Open a certain distance and insulation. The barrier wall 105 can be formed by a conventional screen printing method, and its shape can be a long strip as shown in the second figure, but it can also be a plurality of cylinders, and the shape is not 093133748. Form No. A0101 Page 8 of 23 Page 1003091362-0 1353002 __ Corrected the replacement page limit on March 18, 100. It consists of an insulating material that can support the grid plate and separate the grid plate from the field emission device by a certain distance. In the present embodiment, transparent glass is used as the barrier wall 1〇5. [0028] [0028]

請參閱第三圖,本實施例中柵極板200包括載體板201及 分佈於載體板201表面之柵極202,栅極202為條形金屬 薄膜’其中載體板201及柵極202上形成有多個通孔203 ’該通孔203呈陣列均勻分佈。該通孔203為場發射顯示 器之像素孔’電子發射體104發射之電子可通過該通孔 203發射到陽極板300上。裝配時,柵極板200分佈有栅 極202之一侧對接場發射裝置10Ό,並使條形柵極202與 金屬絲103垂直 / \4 :^$ 請參閱第四圖,本實施例中i陽:極1'板‘3〇(Τ包結®板301,陽 極302以及形成於陽極302表面之螢光層303,螢光層303 由多個矩陣塊組成’每一小塊與栅極板2〇〇上之通孔2〇3 位置對應。裝配時,形成有丨韦屢_層3叫乏一側對接柵極 板200,並採用絕緣阻隔壁,舉所迷陽極板3〇〇 ,使陽極 板3 0 0與栅極板2 〇 〇之間隔摄距離。 ·=·- T- '•i...- ·.Referring to the third figure, in the embodiment, the gate plate 200 includes a carrier plate 201 and a gate electrode 202 distributed on the surface of the carrier plate 201. The gate electrode 202 is a strip-shaped metal film. The carrier plate 201 and the gate electrode 202 are formed thereon. The plurality of through holes 203' are uniformly distributed in an array. The through hole 203 is a pixel hole of a field emission display. Electrons emitted from the electron emitter 104 can be emitted to the anode plate 300 through the through hole 203. When assembled, the grid plate 200 is distributed with one side of the gate 202 to be connected to the field emission device 10A, and the strip gate 202 is perpendicular to the wire 103 / \4 : ^$ Please refer to the fourth figure, in this embodiment i Yang: pole 1 'plate '3 〇 (Τ ® ® plate 301, anode 302 and fluorescent layer 303 formed on the surface of the anode 302, the fluorescent layer 303 is composed of a plurality of matrix blocks 'each small piece and grid plate The position of the through hole 2〇3 on the 〇〇2 corresponds to the position of the through hole 2〇3. When assembled, the 丨 屡 _ layer 3 is called the side of the butt grid plate 200, and the insulating barrier wall is used, and the anode plate is 3 〇〇 The distance between the anode plate 300 and the gate plate 2 is 间隔. ·=·- T- '•i...- ·.

[0029]最後,如第五圖所示,側壁600及侧壁7〇〇將上述場發射 裝置100、柵極板20Q及陽極板3〇〇連接、支撐並密封, 形成一内部真空空間,從而形成器件。使用時,施加不 同電壓給金屬膜102 (即陰極接線頭)、柵極2〇2以及陽 極302,電子發射體1〇4即發射電子,該電子通過通孔 203,並於陽極電場加速下轟擊到螢光層3〇3上使其發光 1003091362-0 093133748 表單編號A0101 第9頁/共23頁 1353002 [0030] 100年03月18日核正替换頁 如第六圖所示,本發明第二實施例所提供之場發射顯示 器分解圖’其包括場發射裝置110、陽極板300以及位於 其間之柵極板200,其中場發射裴置11()包括絕緣玻璃基 板101,形成於基板101上之條形陰極112,以及形成於 條形陰極112表面上之電子發射體1〇4,該條形陰極Π2 上表面為凸起之弧面’電子發射體1〇4基本垂直立於該表 面。從圖示中可看出’該條形陰極U2之兩端即徑向截面 為弧形。當然該截面形狀不限於標準圓弧,只要該條形 陰極112表面為曲面’並向外凸出即可。該條形陰極112 可通過印刷等傳統方法形成。由於該弧面向外凸起,因 此垂直形成於其表面之電子發射罈104呈發散狀分佈,相 - 鄰電子發射體104之尖端彼此分離,這樣電子射體1〇4 場遮罩效應較弱’獲得同樣電流需要芝電場/強度降低, 從而可降低驅動成本。 另外,基板101上還&免置有由絕緣材料組成之阻隔壁11 5 ,其分佈於相鄰金屬絲之間,用’於支撲^極板2〇〇,並使 柵極板200與場發射裝置11:0隔開一定距離且絕緣。該阻 、' 厂 ' 隔壁115可以用傳統之絲網印刷方法形成,其形狀不限, 由絕緣材料組成、能支撐柵極板並將柵極板與場發射裝 置隔開一定距離即可。本實施例中阻隔壁115材料為透明 玻璃,形成多個柱狀體,分佈於相鄰條形陰極112間之基 板111上,如第四圖所示。 本實施例中場發射顯示器之柵極板2〇〇與陽極板3〇〇結構 及其裝配與第一實施例中相同。 此外,對第一實施例與第二實施例中場發射顯示 表單編號A0101 第10頁/共23頁[0029] Finally, as shown in the fifth figure, the side wall 600 and the side wall 7〇〇 connect, support and seal the field emission device 100, the grid plate 20Q and the anode plate 3 to form an internal vacuum space, thereby forming an internal vacuum space. Form the device. In use, different voltages are applied to the metal film 102 (ie, the cathode terminal), the gate 2〇2, and the anode 302. The electron emitters 1〇4 emit electrons, and the electrons pass through the through holes 203 and are bombarded by the electric field of the anode. To the fluorescent layer 3〇3 to make it emit light 1003091362-0 093133748 Form No. A0101 Page 9 / Total 23 Page 135302 [0030] 100 March 18th Nuclear replacement page as shown in the sixth figure, the second invention The field emission display exploded view of the embodiment includes a field emission device 110, an anode plate 300, and a gate plate 200 therebetween, wherein the field emission device 11 () includes an insulating glass substrate 101 formed on the substrate 101. A strip cathode 112, and an electron emitter 1〇4 formed on the surface of the strip cathode 112, the upper surface of the strip cathode Π2 is a convex curved surface 'electron emitter 1〇4 stands substantially perpendicularly to the surface. As can be seen from the figure, the both ends of the strip-shaped cathode U2 have a radial cross section which is curved. Of course, the sectional shape is not limited to the standard circular arc as long as the surface of the strip-shaped cathode 112 is curved and protrudes outward. The strip cathode 112 can be formed by a conventional method such as printing. Since the arc is convex toward the outside, the electron-emitting holes 104 formed perpendicularly on the surface thereof are distributed in a divergent manner, and the tips of the phase-neighboring electron emitters 104 are separated from each other, so that the electron emitter 1 〇 4 field mask effect is weaker' Obtaining the same current requires a reduction in the electric field/intensity of the cheese, which can reduce the driving cost. In addition, the substrate 101 is also provided with a barrier wall 11 5 composed of an insulating material, which is distributed between the adjacent wires, and is used to slap the plate 2 and make the grid plate 200 The field emission device 11:0 is separated by a certain distance and insulated. The resist, 'factory' partition 115 can be formed by a conventional screen printing method, and its shape is not limited. It is composed of an insulating material, can support the grid plate, and can separate the grid plate from the field emission device by a certain distance. In the embodiment, the material of the barrier wall 115 is transparent glass, and a plurality of columnar bodies are formed, which are distributed on the substrate 111 between the adjacent strip cathodes 112, as shown in the fourth figure. The gate plate 2 〇〇 and anode plate 3 〇〇 structure of the field emission display in this embodiment and its assembly are the same as in the first embodiment. Further, for the first embodiment and the second embodiment, the field emission display form number A0101 is 10 pages/total 23 pages.

[0031] [0032] [0033] 093133748 器之柵 1003091362-0 1353002 100年03月18日按正替換頁 極板上還可作進一步改進: [0034]請參閱第七圖,柵極板400包括載體板201、分佈於載體 板201之一第一表面上之第一栅極202以及形成於一與第 一表面相對之第二表面上之第二柵極4〇1。第一柵極2〇2 為條形金屬薄膜,與第三圖所示相同,安裝時該第一柵 極202靠近場發射裝置,使用時該第一柵極202提供電勢 激發電子;第二栅極401為一整體金屬薄層,安裝時其靠 近陽極’使用時其可控制電子發射方向,具有聚焦之效 果’提高場發射顯示器之亮度及解析度。同樣,載體板 201、柵極202以及第二柵極401上形成有多個通孔203, 該通孔2〇3呈陣列均勻分佈。:該莩礼 為讀發射顯示器 之像素孔’電子發射體發射缚該通孔2 〇 3發射 到陽極板300上。 '… [0035]另外’如第八圖所示,柵極板500中第二柵極501為條形 金屬薄膜。該條形第二栅雜極2〇2相互垂直或平 行分佈。該第二柵極5〇1同_•.养鼻梓勢黨子發射方向之作 用,具有聚焦之妹果,可域肩績弯·與顯示器之亮度及解 析度。 [0036]本發明之場發射裝置同樣適用於背栅型場發射顯示器, 其包括一場發射裝置、一陽極及一栅極,該場發射裝置 包括一基板、形成於基板一侧表面之多個陰極以及形成 於陰極表面之多個電子發射體’該陽極位於該電子發射 體一侧並與其隔開一定距離,該栅極位於基板背側,與 陰極絕緣,其中形成有多個電子發射體之陰極表面.為凸 起之曲面。 093133748 表單煸號A0101 第11頁/共23頁 1003091362-0 1353002 100年33月I8日修正替换亩 [0037] 該背栅型場發射顯示器與上述第一實施例與第二實施例 中所述之遠控栅型場發射顯示器相比,其不同之處在於 其栅極為金屬薄膜,形成於場發射裝置基板之背側,且 不需要形成像素孔,而陽極結構、場發射裝置結構無本 質區別。 [0038] 綜上所述,本發明提供之場發射顯示器場遮罩效應減弱 ,從而使獲得同樣電流需要之電場強度降低,可降低驅 動成本,解析度高,且可批量生産,適合實際應用。[0033] [0033] 093133748 gate 1003091362-0 1353002 March 18, 100 can be further improved by replacing the page plate: [0034] Referring to the seventh figure, the grid plate 400 includes The carrier plate 201 has a first gate 202 distributed on a first surface of the carrier plate 201 and a second gate 4〇1 formed on a second surface opposite to the first surface. The first gate 2〇2 is a strip-shaped metal film, which is the same as that shown in the third figure. When installed, the first gate 202 is close to the field emission device. In use, the first gate 202 provides a potential to excite electrons; The pole 401 is an integral thin metal layer which is mounted close to the anode when it is used to control the direction of electron emission, and has a focusing effect to improve the brightness and resolution of the field emission display. Similarly, a plurality of through holes 203 are formed in the carrier plate 201, the gate electrode 202, and the second gate electrode 401, and the through holes 2〇3 are evenly distributed in an array. The sputum is for the pixel of the read emission display. The electron emitter emits the via 2 〇 3 and is emitted onto the anode plate 300. '... [0035] In addition, as shown in the eighth figure, the second gate 501 of the gate plate 500 is a strip-shaped metal thin film. The strip-shaped second gate hetero 2 2 is distributed perpendicularly or parallel to each other. The second grid 5〇1 is the same as the _•. 梓 梓 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党 党[0036] The field emission device of the present invention is also applicable to a back-gate field emission display, which includes a field emission device, an anode, and a gate, the field emission device including a substrate and a plurality of cathodes formed on one surface of the substrate. And a plurality of electron emitters formed on the surface of the cathode. The anode is located on a side of the electron emitter and spaced apart therefrom. The gate is located on the back side of the substrate and is insulated from the cathode. The cathode of the plurality of electron emitters is formed therein. Surface. It is a convex surface. 093133748 Form nickname A0101 Page 11 of 23 1003091362-0 1353002 100 years of July I8 correction replacement acres [0037] The back gate type field emission display and the first embodiment and the second embodiment described above Compared with the remote control gate field emission display, the difference is that the gate is a metal film formed on the back side of the field emission device substrate, and there is no need to form a pixel hole, and the anode structure and the field emission device structure are not substantially different. In summary, the field emission display field mask effect provided by the present invention is weakened, so that the electric field strength required to obtain the same current is reduced, the driving cost can be reduced, the resolution is high, and mass production can be performed, which is suitable for practical applications.

【圖式簡單說明】 [0039] 第一圖係先前技術之三極型場發射顯示器分解圖。 [0040] 第二圖係本發明第一實施例場發射顯示器分解圖。 [0041] 第三圖係本發明場發射顯示器中柵極板立艟示意圖。 [0042] 第四圖係本發明場發射顯示器陽極板立體示意圖。 [0043] 第五圖係本發明第一實施例場發射顯示器封裝後立體示BRIEF DESCRIPTION OF THE DRAWINGS [0039] The first figure is an exploded view of a prior art three-pole field emission display. [0040] The second drawing is an exploded view of the field emission display of the first embodiment of the present invention. [0041] The third figure is a schematic diagram of a grid plate in a field emission display of the present invention. [0042] The fourth figure is a perspective view of the anode plate of the field emission display of the present invention. [0043] The fifth figure is a stereoscopic display of the field emission display package of the first embodiment of the present invention.

t圖。 :r: m: -.- [0044] 第六圖係本發明第二實施你1礒發身ί顯示器分解圖。 [0045] 第七圖係本發明第二種柵極板立體示意圖。 [0046] 第八圖係本發明第三種柵極板立體示意圖。 【主要元件符號說明】 [0047] 場發射裝置100 絕緣玻璃基板101 [0048] 金屬膜 102金屬絲 103 093133748 表單編號Α0101 第12頁/共23頁 1003091362-0 1353002t map. :r: m: -.- [0044] The sixth figure is the second embodiment of the present invention. [0045] The seventh figure is a perspective view of a second type of grid plate of the present invention. [0046] The eighth figure is a perspective view of a third type of grid plate of the present invention. [Main component symbol description] [0047] Field emission device 100 Insulating glass substrate 101 [0048] Metal film 102 wire 103 093133748 Form number Α 0101 Page 12 of 23 1003091362-0 1353002

100年03月18日修正替換頁 [0049] 電子發射體 104 阻隔壁 105 [0050] 場發射裝置 110 基板 111 [0051] 條形陰極112阻隔壁 115 [0052] 栅極板200 載體板201 [0053] 第一柵極202通孔203 [0054] 陽極板300 面板 301 [0055] 陽極302營光層 303 [0056] 栅極板400 第二柵極 401 第二 *;' - [0057] 栅極板5 0 0 橋極 501 &喊/: 、’-.Τ: ?ί!·Λ/?· 續 [0058] 側壁600側壁700Modified replacement page [0049] electron emitter 104 barrier wall 105 [0050] field emission device 110 substrate 111 [0051] strip cathode 112 barrier wall 115 [0052] grid plate 200 carrier plate 201 [0053] First Gate 202 Through Hole 203 [0054] Anode Plate 300 Panel 301 [0055] Anode 302 Camp Light Layer 303 [0056] Gate Plate 400 Second Gate 401 Second*; '- [0057] Gate Plate 5 0 0 Bridge 501 & Shout /:, '-.Τ: ?ί!·Λ/?· Continued [0058] Sidewall 600 Sidewall 700

093133748 表單編號A0101 第13頁/共23頁 1003091362-0093133748 Form No. A0101 Page 13 of 23 1003091362-0

Claims (1)

1353002 ι__ 100年03月18日修正替振頁 七、申請專利範圍: 1 . 一種場發射裝置,其包括: 一基板; 形成於基板上之多個陰極;以及 形成於陰極表面之多個電子發射體, 其改良在於形成有多個電子發射體之陰極表面為凸起之曲 面01353002 ι__ Amendment to the vibration page on March 18, 2010. Patent application scope: 1. A field emission device comprising: a substrate; a plurality of cathodes formed on the substrate; and a plurality of electron emission formed on the surface of the cathode Body, the improvement is that the cathode surface on which the plurality of electron emitters are formed is a convex curved surface 2 .如申請專利範圍第1項所述之場發射裝置,其改良在於該 多個電子發射體基本垂直立於該陰極表面,呈發散狀分佈 3 .如申請專利範圍第1項所述之場發射裝置,其改良在於該 陰極為圓柱形金屬絲。 4.如申請專利範圍第3項所述之場發射裝置,其改良在於該 金屬絲包括金絲、不鏽鋼絲或鎳絲。 5 .如申請專利範圍第3項所述之場發射裝置,其改良在於該 金屬絲直徑為10微米至數百辦米^ 6 .如申請專利範圍第3項所述孓場發射裝置,其改良在於金 屬絲之兩端、基板表面形成有金屬媳,金屬絲之兩端固定 於該金屬膜上。 7. 如申請專利範圍第3至6項中任意一項所述之場發射裝置, 其改良在於基板上形成有一層玻璃聚料,金屬絲通過該玻 璃漿料固定於基板上。 8. 如申請專利範圍第1項所述之場發射裝置,其改良在於該 陰極為條形金屬薄膜,其徑向截面為弧形。 9. 如申請專利範圍第1項所述之場發射裝置,其改良在於該 093133748 表單編號A0101 第14頁/共23頁 1003091362-0 1353002 -- 100年03月18日核正替換頁 - 多個電子發射體包括奈米碳管、金剛石、石夕奈米線或金屬 ! 尖端。 10 . —種場發射顯示器,其包括: 一場發射裝置,其包括一基板、形成於基板上之多個陰極 以及形成於陰極表面之多個電子發射體; 一陽極;及 位於二者間之一柵極, • 其改良在於形成有多個電子發射體之陰極表面為凸起之曲2. The field emission device of claim 1, wherein the plurality of electron emitters are substantially perpendicular to the surface of the cathode and are distributed in a divergent manner. 3. The field as recited in claim 1 The launching device is modified in that the cathode is a cylindrical wire. 4. The field emission device of claim 3, wherein the wire comprises gold wire, stainless steel wire or nickel wire. 5. The field emission device of claim 3, wherein the wire is from 10 micrometers to hundreds of meters in diameter. 6 is as described in claim 3 of the patent field. Metal iridium is formed on both ends of the wire and on the surface of the substrate, and both ends of the wire are fixed on the metal film. 7. The field emission device according to any one of claims 3 to 6, wherein the substrate is formed with a layer of glass material, and the wire is fixed to the substrate through the glass paste. 8. The field emission device of claim 1, wherein the cathode is a strip-shaped metal film having a curved cross section in a radial shape. 9. The field emission device according to item 1 of the patent application, the improvement is that the 093133748 form number A0101 page 14 / 23 pages 1003091362-0 1353002 - 100 years of March 18th nuclear replacement page - multiple Electron emitters include carbon nanotubes, diamonds, Shih Nylon or metal! 10. A field emission display, comprising: a field emission device comprising a substrate, a plurality of cathodes formed on the substrate, and a plurality of electron emitters formed on the surface of the cathode; an anode; and one of the two Gate, • the improvement is that the cathode surface on which a plurality of electron emitters are formed is a convex curve 面 11 如申請專利範圍第10項所述之場發射顯示器 該多個電子發射體基本垂查胃 12 佈。 讎 如申請專利範圍第ίο項所述 其改良在於 呈發散狀分 其改良在於 該陰極為圓柱形金屬絲。 13 .如申請專利範圍第12項所述之場發射顯示器,其改良在於 該金屬絲包括金絲、不鑛W鲧1¾感Face 11 The field emission display as described in claim 10 of the patent application section. The plurality of electron emitters substantially check the stomach 12 cloth.改善 The improvement described in the patent application scope is in the form of a divergence. The improvement is that the cathode is a cylindrical wire. 13. The field emission display of claim 12, wherein the wire comprises a gold wire, a non-mineral W鲧13⁄4 feeling 14 .如申請專利範圍第12項所璉1殤_#^器,其改良在於 該金屬絲直徑為1 0微米至數*百 15 .如申請專利範圍第12項所述之場發射顯示器,其改良在於 金屬絲之兩端、基板表面形成有金屬膜,金屬絲之兩端固 定於該金屬膜上。 16 .如申請專利範圍第12至15任意一項所述之場發射顯示器 ,其改良在於基板上形成有一層玻璃漿料,金屬絲通過該 玻璃漿料固定於基板上。 17 .如申請專利範圍第10項所述之場發射顯示器,其改良在於 該陰極為條形金屬薄膜,其徑向截面為弧形。 093133748 表單編號A0101 第15頁/共23頁 1003091362-0 1353002 100年03月18日梭正替换亩 18 .如申請專利範圍第10項所述之場發射顯示器,其改良在於 該多個電子發射體包括奈米碳管、金剛石、石夕奈米線或金 屬尖端。 . 19 .如申請專利範圍第10項所述之場發射顯示器,其改良在於 該栅極包括一載體板,栅極形成於該載體板靠近場發射裝 置之表面上。 20 .如申請專利範圍第19項所述之場發射顯示器,其改良在於 該載體板靠近陽極之表面上形成有一第二柵極。 21 .如申請專利範圍第20項所述之場發射顯示器,其改良在於 該第二栅極為條形金屬薄膜或一覆蓋於該載體板上之整體 金屬薄膜。 22 . —種場發射顯示器,其包括: 一場發射裝置,其包括一基板、形成於基板一側表面之多 個陰極以及形成於陰極表面之多個電子發射體; 一陽極,其位於該電子發射體一側並與其隔開一定距離; /SL. 一柵極,其位於基板背側,备陰極絕蟓, 其改良在於形成有多個電子發射體之陰極表面為凸起之曲 面。 23 .如申請專利範圍第22項所述之場發射顯示器,其改良在於 該多個電子發射體基本垂直立於該陰極表面,呈發散狀分 佈。 24 .如申請專利範圍第22項所述之場發射顯示器,其改良在於 該陰極為圓柱形金屬絲。 25 .如申請專利範圍第24項所述之場發射顯示器,其改良在於 該金屬絲包括金絲、不鏽鋼絲或鎳絲。 09313374814. The apparatus of claim 12, wherein the wire has a diameter of from 10 micrometers to a number of hundred and fifteen. The field emission display of claim 12, wherein The improvement is that both ends of the wire and a metal film are formed on the surface of the substrate, and both ends of the wire are fixed to the metal film. The field emission display according to any one of claims 12 to 15, wherein the glass substrate is formed with a glass paste, and the wire is fixed to the substrate through the glass paste. 17. The field emission display of claim 10, wherein the cathode is a strip-shaped metal film having a curved arcuate cross section. 093133748 Form No. A0101 Page 15 of 23 1003091362-0 1353002 On March 18, 100, the shuttle is replacing the mu 18. The field emission display of claim 10 is improved in the plurality of electron emitters. Including carbon nanotubes, diamonds, Shinai nanowires or metal tips. 19. The field emission display of claim 10, wherein the gate comprises a carrier plate, and the gate is formed on the surface of the carrier plate adjacent to the field emission device. 20. The field emission display of claim 19, wherein the carrier plate is formed with a second gate adjacent to the surface of the anode. 21. The field emission display of claim 20, wherein the second gate is a strip metal film or an integral metal film overlying the carrier plate. 22. A field emission display, comprising: a field emission device comprising: a substrate, a plurality of cathodes formed on one surface of the substrate; and a plurality of electron emitters formed on the surface of the cathode; an anode located at the electron emission One side of the body is spaced apart from it by a distance; /SL. A gate, which is located on the back side of the substrate, is provided with a cathode, and the improvement is that the surface of the cathode on which the plurality of electron emitters are formed is a convex curved surface. A field emission display according to claim 22, wherein the plurality of electron emitters are disposed substantially perpendicularly to the surface of the cathode and are distributed in a divergent manner. 24. The field emission display of claim 22, wherein the cathode is a cylindrical wire. 25. The field emission display of claim 24, wherein the wire comprises a gold wire, a stainless steel wire or a nickel wire. 093133748 表單编號Α0101 第16頁/共23頁 1003091362-0 1353002 » · 26 . 27 . 28 .Form No. Α0101 Page 16 of 23 1003091362-0 1353002 » · 26 . 29 . 100年03月18日核正替换頁 如申請專利範圍第24項所述之場發射顯示器,其改良在於 該金屬絲直徑為10微米至數百微米。 如申請專利範圍第24項所述之場發射顯示器,其改良在於 金屬絲之兩端、基板表面形成有金屬膜,金屬絲之兩端固 定於該金屬膜上。 如申請專利範圍第24至27項中任意一項所述之場發射顯 示器,其改良在於基板上形成有一層玻璃漿料,金屬絲通 過該玻璃漿料固定於基板上。 如申請專利範圍第22項所述之場發射顯示器,其改良在於 該陰極為條形金屬薄膜,其徑向截面為弧形。 30 .如申請專利範圍第22項所述之場發射顯:示其改良在於 f 該多個電子發射體包括奈米亨/管、.免剛^5、_.夸夕奈米線或金 . /V 屬尖端。 , '29 . The correction of the field of the field emission display of claim 24, wherein the wire has a diameter of from 10 micrometers to several hundred micrometers. The field emission display according to claim 24 is characterized in that both ends of the wire and a metal film are formed on the surface of the substrate, and both ends of the wire are fixed to the metal film. The field emission display of any one of claims 24 to 27, wherein the substrate is formed with a layer of glass paste through which the wire is fixed to the substrate. The field emission display of claim 22, wherein the cathode is a strip-shaped metal film having a curved cross section in a radial shape. 30. The field emission as described in claim 22, wherein the improvement is that the plurality of electron emitters comprises a nano-Heng/tube, a singular, a s. /V is a tip. , ' 093133748 表單編號Α0101 第17頁/共23頁 1003091362-0093133748 Form Number Α0101 Page 17 of 23 1003091362-0
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