CN117174552A - A coplanar quadrupole focusing structure cold cathode electron gun with adjustable electron beam shape - Google Patents
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- 238000010894 electron beam technology Methods 0.000 title claims abstract description 75
- 230000005684 electric field Effects 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000002041 carbon nanotube Substances 0.000 claims description 5
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- 238000000605 extraction Methods 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 238000001493 electron microscopy Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000004347 surface barrier Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002238 carbon nanotube film Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004033 diameter control Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009711 regulatory function Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明公开了一种电子束形可调控的共面四极聚焦结构冷阴极电子枪,包括阴极、栅极、下聚焦极、共面四极聚焦结构、上聚焦极、阳极和隔离体;所述阴极、栅极、下聚焦极、共面四极聚焦结构、上聚焦极、阳极的中心位于同一轴心上,且由下到上依次设置,并通过隔离体将各个电极结构组合为一体结构;共面四极聚焦结构可设置不同电压值,通过调控电压参数组合形成非均匀截面空间电场;通过调节施加于共面四极聚焦结构的电压值组合,产生非均匀截面电场,实现对电子束进行束形、焦斑径向移动调控。本发明技术实现方法简单,能够根据应用对象需求产生不同形状要求的电子束,在微波太赫兹波真空电子器件、电子束曝光、电子显微成像等中有应用价值。
The invention discloses a coplanar quadrupole focusing structure cold cathode electron gun with an adjustable electron beam shape, which includes a cathode, a grid, a lower focusing electrode, a coplanar quadrupole focusing structure, an upper focusing electrode, an anode and a separator; The centers of the cathode, grid, lower focusing electrode, coplanar quadrupole focusing structure, upper focusing electrode, and anode are located on the same axis, and are arranged in sequence from bottom to top, and each electrode structure is combined into an integrated structure through an isolator; The coplanar quadrupole focusing structure can be set to different voltage values, and a non-uniform cross-sectional electric field is formed by adjusting the combination of voltage parameters; by adjusting the combination of voltage values applied to the coplanar quadrupole focusing structure, a non-uniform cross-sectional electric field is generated, and the electron beam is controlled Beam shape and focal spot radial movement control. The technology of the present invention has a simple implementation method, can generate electron beams with different shape requirements according to the needs of the application object, and has application value in microwave terahertz wave vacuum electronic devices, electron beam exposure, electron microscopy imaging, etc.
Description
技术领域Technical field
本发明涉及真空电子源技术领域,更具体的,涉及一种电子束形可调的共面四极聚焦结构冷阴极电子枪,可应用于对电子束形状有不同需求的真空电子器件、电子束曝光装备和电子检测仪器。The invention relates to the technical field of vacuum electron sources, and more specifically, to a cold cathode electron gun with an adjustable coplanar quadrupole focusing structure, which can be used in vacuum electronic devices and electron beam exposure that have different requirements for electron beam shapes. Equipment and electronic testing instruments.
背景技术Background technique
场致电子发射(简称为场发射)与热电子发射、光电子发射、次级电子发射有性质上的不同。热电子发射、光电子发射、次级电子发射都是以不同的形式给予物体内电子以能量,使它们能越过物体表面上的势垒而逸出。场发射的电子不是靠外部给予能量而被激发,场致电子发射或者是用外部强电场来压抑表面势垒,使得固体材料的表面势垒最高点降低,势垒宽度变窄,基于动力学原理使得电子可隧穿表面势垒而逸出。使用场发射的阴极称为冷阴极,利用场发射原理制成的冷阴极电子抢具有时间延迟低、功耗低、电流密度大、能量扩散小、仪器寿命长等特点,在X射线源器件、场发射显示器、高功率微波技术、强流电子束源、新型传感器等仪器具有广阔的应用前景。Field electron emission (referred to as field emission) is qualitatively different from thermal electron emission, photoelectron emission, and secondary electron emission. Thermal electron emission, photoelectron emission, and secondary electron emission all give energy to electrons in an object in different forms, allowing them to escape across potential barriers on the surface of the object. Field-emitted electrons are not excited by external energy. Field-induced electron emission or external strong electric field is used to suppress the surface barrier, which lowers the highest point of the surface barrier of the solid material and narrows the barrier width. It is based on the principle of dynamics. This allows electrons to tunnel through the surface barrier and escape. The cathode using field emission is called a cold cathode. The cold cathode electron gun made by using the field emission principle has the characteristics of low time delay, low power consumption, high current density, small energy diffusion, and long instrument life. It is widely used in X-ray source devices, Instruments such as field emission displays, high-power microwave technology, high-current electron beam sources, and new sensors have broad application prospects.
场发射冷阴极电子枪通过施加外电场使物体内部的电子隧穿发射,其发射的电子束随着电流密度的增加,散角逐渐变大,从而影响微波太赫兹波器件、X射线源、电子束曝光、电子束检测等仪器的准确性,需要在出射电子束的路径上添加电子光学结构以调控。The field emission cold cathode electron gun causes electrons inside the object to tunnel and emit by applying an external electric field. As the current density increases, the divergence angle of the emitted electron beam gradually becomes larger, thus affecting microwave terahertz wave devices, X-ray sources, and electron beam exposure. , the accuracy of instruments such as electron beam detection requires adding electron optical structures to the path of the emitted electron beam for control.
发明内容Contents of the invention
本发明的目的在于解决以上现有技术不能对电子束的形状和位置进行调控的问题,提供了一种电子束形可调的共面四极聚焦结构冷阴极电子枪,其能对电子束的形状和位置进行调控。The purpose of the present invention is to solve the problem that the above existing technology cannot control the shape and position of the electron beam, and provide a coplanar quadrupole focusing structure cold cathode electron gun with adjustable electron beam shape, which can control the shape and position of the electron beam. and position control.
为实现上述本发明目的,采用的技术方案如下:In order to achieve the above-mentioned purpose of the present invention, the technical solutions adopted are as follows:
一种电子束形可调的共面四极聚焦结构冷阴极电子枪,所述电子枪包括阴极、栅极、下聚焦极、共面四极聚焦结构、上聚焦极、阳极、隔离体;所述阴极、栅极、下聚焦极、共面四极聚焦结构、上聚焦极、阳极的中心位于同一轴心上,且由下到上依次设置,并通过隔离体将各个电极结构组合为一体结构。A cold cathode electron gun with an adjustable electron beam shape and a coplanar quadrupole focusing structure. The electron gun includes a cathode, a grid, a lower focusing electrode, a coplanar quadrupole focusing structure, an upper focusing electrode, an anode, and a separator; the cathode The centers of the grid, the lower focusing electrode, the coplanar quadrupole focusing structure, the upper focusing electrode, and the anode are located on the same axis and are arranged in sequence from bottom to top, and each electrode structure is combined into an integrated structure through an isolator.
优选地,所述共面四极聚焦结构包括四个圆环电极结构,四个所述圆环电极结构处于同轴共面,圆环电极结构是圆心角为90°,相邻的两个圆环电极结构之间设有隔离结构。Preferably, the coplanar quadrupole focusing structure includes four annular electrode structures, and the four annular electrode structures are coaxial and coplanar. The annular electrode structure has a central angle of 90°, and two adjacent annular electrode structures have a central angle of 90°. An isolation structure is provided between the ring electrode structures.
优选地,所述共面四极聚焦结构的轴向厚度大于下聚焦极、上聚焦极的轴向厚度。Preferably, the axial thickness of the coplanar quadrupole focusing structure is greater than the axial thickness of the lower focusing pole and the upper focusing pole.
优选地,所述阴极包括阴极底座、场发射体;所述场发射体以欧姆接触被固定于阴极底座的中心位置。Preferably, the cathode includes a cathode base and a field emitter; the field emitter is fixed at the center of the cathode base in ohmic contact.
进一步地,所述场发射体采用直立有序碳纳米管,且其形状为圆柱体。Further, the field emitter adopts upright ordered carbon nanotubes, and its shape is a cylinder.
优选地,所述栅极包括由栅孔和栅条构成的栅网、栅网垫片;所述栅网设置在阴极与栅极之间的隔离体的凹槽中,所述栅极垫片的一端设置在栅网之上。Preferably, the grid includes a grid composed of grid holes and grid bars, and a grid gasket; the grid is disposed in a groove of the separator between the cathode and the grid, and the grid gasket One end is set above the grid.
还包括绝缘外壳,所述阴极、栅极、下聚焦极、共面四极聚焦结构、上聚焦极、阳极、隔离体均设置在绝缘外壳中。It also includes an insulating housing, and the cathode, grid, lower focusing electrode, coplanar quadrupole focusing structure, upper focusing electrode, anode, and isolator are all arranged in the insulating housing.
所述阳极为中心带圆孔的圆形电极结构,用于实现电子束引出投射。The anode is a circular electrode structure with a circular hole in the center, which is used to realize electron beam extraction and projection.
在共面四极聚焦结构冷阴极电子枪工作时,阴极接地,栅极施加第一电压,形成电子发射的驱动电场;所述下聚焦极施加第二电压,所述共面四极聚焦结构施加第三电压,所述上聚焦极施加第四电压,所述阳极施加第五电压,形成调控电子运动轨迹的电场,以实现电子束进行聚焦、束形、焦斑径向移动几种调控。When the coplanar quadrupole focusing structure cold cathode electron gun is working, the cathode is grounded, and a first voltage is applied to the grid to form a driving electric field for electron emission; the lower focusing electrode applies a second voltage, and the coplanar quadrupole focusing structure applies a third voltage. Three voltages, a fourth voltage is applied to the upper focusing electrode, and a fifth voltage is applied to the anode to form an electric field that regulates the movement trajectory of electrons, so as to realize several types of regulation of focusing, beam shape, and radial movement of the focal spot of the electron beam.
进一步地,所述第三电压为电压值组合,通过调节施加于共面四极聚焦结构电极的电压值组合,产生非均匀截面电场,实现对电子束进行束形、焦斑径向移动调控。Furthermore, the third voltage is a combination of voltage values. By adjusting the combination of voltage values applied to the electrodes of the coplanar quadrupole focusing structure, a non-uniform cross-sectional electric field is generated, thereby controlling the beam shape and focal spot radial movement of the electron beam.
本发明的有益效果如下:The beneficial effects of the present invention are as follows:
本发明通过在阴极、栅极施加电压,形成电子发射的驱动电场;发射电子通过栅极后进入聚焦区域,聚焦结构包括下聚焦极、共面四极聚焦结构、上聚焦极;当下聚焦极、共面四极聚焦结构、上聚焦极为同电位时可以得到圆形微焦斑的电子束,实现电子束聚焦功能;可以对聚焦结构电极的电压进行调节,通过调节聚焦结构电极的电压可实现电子束直径调控;通过调节施加于共面四极聚焦结构的电极电压组合来形成非均匀截面空间电场,可实现带状电子束、焦斑径向截面位移等调控功能。因而,本发明可实现具有电子束聚焦、电子束形转换、电子束焦斑径向移动等调控能力的冷阴极电子枪,其具有焦斑小、可调控、体积小等优点,在小型化的真空电子器件、CT仪器或其他便携式X射线成像设备等中具有应用价值。The present invention forms a driving electric field for electron emission by applying voltage to the cathode and the grid; the emitted electrons enter the focusing area after passing through the grid. The focusing structure includes a lower focusing electrode, a coplanar quadrupole focusing structure, and an upper focusing electrode; the lower focusing electrode, When the coplanar quadrupole focusing structure and the upper focusing pole are at the same potential, an electron beam with a circular micro-focus spot can be obtained to realize the electron beam focusing function; the voltage of the focusing structure electrode can be adjusted, and the electron beam can be realized by adjusting the voltage of the focusing structure electrode. Beam diameter control: By adjusting the combination of electrode voltages applied to the coplanar quadrupole focusing structure to form a non-uniform cross-sectional spatial electric field, control functions such as ribbon electron beam and focal spot radial cross-sectional displacement can be realized. Therefore, the present invention can realize a cold cathode electron gun with control capabilities such as electron beam focusing, electron beam shape conversion, and electron beam focus spot radial movement. It has the advantages of small focus spot, controllability, and small volume, and can be used in a miniaturized vacuum. It has application value in electronic devices, CT instruments or other portable X-ray imaging equipment.
附图说明Description of drawings
为了使本发明的目的、技术方案更加清楚,本发明提供如下附图并进行说明:In order to make the purpose and technical solution of the present invention clearer, the present invention provides the following drawings and descriptions:
图1为本发明的电子束形可调的共面四极聚焦结构冷阴极电子枪的侧视结构示意图。Figure 1 is a schematic side structural view of a cold cathode electron gun with an adjustable electron beam shape and a coplanar quadrupole focusing structure according to the present invention.
图2为共面四极聚焦结构的俯视结构示意图,为四个分立的圆环电极。Figure 2 is a schematic top view of the coplanar quadrupole focusing structure, which is four separate ring electrodes.
图3为电子束形可调的共面四极聚焦结构冷阴极电子枪实现圆形电子束的聚焦光斑图,(a)为直径2.76mm的电子束光斑图,(b)为直径0.17mm的电子束光斑图,图中虚线所圈为有效光斑轮廓。Figure 3 shows the focused spot diagram of a circular electron beam achieved by a cold cathode electron gun with an adjustable coplanar quadrupole focusing structure. (a) is an electron beam spot diagram with a diameter of 2.76mm, and (b) is an electron beam with a diameter of 0.17mm. Beam spot diagram, the dotted line circled in the figure is the effective spot outline.
图4为电子束形可调的共面四极聚焦结构冷阴极电子枪实现带状电子束的光斑图,(a)为未调控的圆形电子束光斑图,(b)为调控后带状电子束光斑图,图中虚线所圈为有效光斑轮廓。Figure 4 shows the spot diagram of a strip-shaped electron beam achieved by a cold cathode electron gun with an adjustable coplanar quadrupole focusing structure. (a) is the unregulated circular electron beam spot diagram, and (b) is the strip-shaped electron beam after regulation. Beam spot diagram, the dotted line circled in the figure is the effective spot outline.
图5为电子束形可调的共面四极聚焦结构冷阴极电子枪实现圆形电子束焦斑径向移动的光斑图,(a)为初始位置光斑图,(b)为调控束斑移动后的光斑图,图中线条所圈为有效光斑轮廓,两个参考线之间的距离为电子束焦斑在径向移动的距离实测为1.11mm。Figure 5 shows the spot diagram of a cold cathode electron gun with an adjustable coplanar quadrupole focusing structure that achieves radial movement of the circular electron beam focal spot. (a) is the initial position spot diagram, and (b) is the spot diagram after adjusting the beam spot movement. The spot diagram, the line circled in the figure is the effective spot profile, the distance between the two reference lines is the distance of the electron beam focal spot moving in the radial direction. The actual measured distance is 1.11mm.
图中,1为阴极底座,2为场发射体,3为栅网,4为栅网垫片,5为下聚焦极,6为共面四极聚焦结构,7为上聚焦极,8为阳极,9为陶瓷隔离体;10为A电极,11为B电极,12为C电极,13为D电极。In the figure, 1 is the cathode base, 2 is the field emitter, 3 is the grid, 4 is the grid gasket, 5 is the lower focusing electrode, 6 is the coplanar quadrupole focusing structure, 7 is the upper focusing electrode, and 8 is the anode. , 9 is the ceramic isolator; 10 is the A electrode, 11 is the B electrode, 12 is the C electrode, and 13 is the D electrode.
具体实施方式Detailed ways
以下将参照附图和优选实施例来说明本发明的实施方式,本领域技术人员可由本说明书中所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。应当理解,优选实施例仅为了说明本发明,而不是为了限制本发明的保护范围。The implementation of the present invention will be described below with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention.
需要说明的是,以下实施例中所提供的图示仅以示意方式说明本发明的基本构想,遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为一种随意的改变,且其组件布局型态也可能更为复杂。It should be noted that the diagrams provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner, and the drawings only show the components related to the present invention and do not follow the number, shape and number of components during actual implementation. Dimension drawing, in actual implementation, the type, quantity and proportion of each component can be arbitrarily changed, and the component layout type may also be more complex.
实施例1Example 1
如图1所示,一种电子束形可调的共面四极聚焦结构冷阴极电子枪,所述电子枪包括阴极、栅极、下聚焦极5、共面四极聚焦结构6、上聚焦极7、阳极8、隔离体;所述阴极、栅极、下聚焦极5、共面四极聚焦结构6、上聚焦极7、阳极8的中心位于同一轴心上,且由下到上依次设置,并通过隔离体将各个电极结构组合为一体结构。As shown in Figure 1, a cold cathode electron gun with an adjustable electron beam shape and a coplanar quadrupole focusing structure. The electron gun includes a cathode, a grid, a lower focusing electrode 5, a coplanar quadrupole focusing structure 6, and an upper focusing electrode 7 , anode 8, separator; the centers of the cathode, grid, lower focusing electrode 5, coplanar quadrupole focusing structure 6, upper focusing electrode 7, and anode 8 are located on the same axis, and are arranged in sequence from bottom to top, And the various electrode structures are combined into an integrated structure through the separator.
所述阴极、栅极、下聚焦极5、共面四极聚焦结构6、上聚焦极7、阳极8之间采用隔离体进行隔离绝缘,所述隔离体采用陶瓷隔离体9。The cathode, grid electrode, lower focusing electrode 5, coplanar quadrupole focusing structure 6, upper focusing electrode 7, and anode 8 are isolated and insulated by separators, and the isolators are ceramic isolators 9.
具体地,所述陶瓷隔离体9可以采用95%氧化铝陶瓷制作,用于组装电子枪电极结构部件,保障各个电极之间的有效绝缘。Specifically, the ceramic isolator 9 can be made of 95% alumina ceramic, and is used to assemble the electron gun electrode structural components to ensure effective insulation between each electrode.
在一个具体的实施例中,所述阴极包括阴极底座1、场发射体2;所述场发射体2可以采用直立有序碳纳米管;所述的阴极底座1可以采用不锈钢制成,阴极底座1的中心位置设有凹槽,用于装配场发射体2,所述场发射体2与阴极底座1的凹槽之间互联为欧姆接触。In a specific embodiment, the cathode includes a cathode base 1 and a field emitter 2; the field emitter 2 can be made of upright ordered carbon nanotubes; the cathode base 1 can be made of stainless steel, and the cathode base A groove is provided at the center of 1 for assembling the field emitter 2. The interconnection between the field emitter 2 and the groove of the cathode base 1 is ohmic contact.
本实施例中,所述阴极底座1采用直径为20mm、高度为5mm的圆柱体。所述的场发射体2由场发射材料制成,形状呈圆柱形,通过导电粘合剂粘接于阴极底座1,所述导电粘合剂为银浆。In this embodiment, the cathode base 1 is a cylinder with a diameter of 20 mm and a height of 5 mm. The field emitter 2 is made of field emission material, has a cylindrical shape, and is bonded to the cathode base 1 through a conductive adhesive, and the conductive adhesive is silver paste.
具体地,所述场发射体2的材料采用由化学气相沉积方法生长在硅片上的直立有序碳纳米管薄膜,其形状为直径为1mm、高度为0.5mm的圆柱体。在场发射体2制作上,通过机械剥离转移方式,将生长在硅片上的直立碳纳米管圆柱体转移并置于阴极底座1的凹槽内,直立碳纳米管圆柱体与阴极底座1之间通过银浆进行固定粘接。Specifically, the material of the field emitter 2 is an upright ordered carbon nanotube film grown on a silicon wafer by a chemical vapor deposition method, and its shape is a cylinder with a diameter of 1 mm and a height of 0.5 mm. In the production of field emitter 2, the upright carbon nanotube cylinder grown on the silicon wafer is transferred and placed in the groove of the cathode base 1 through mechanical peeling and transfer, between the upright carbon nanotube cylinder and the cathode base 1 Fixed bonding with silver paste.
在一个具体的实施例中,所述栅极包括栅网3和栅极垫片4,其作用是为阴极提供驱动电场以使电子发射和调控发射电流大小;所述栅网3被放置于隔离体的凹槽内;所述栅网垫片4可以采用不锈钢。In a specific embodiment, the grid includes a grid 3 and a gate spacer 4, which function to provide a driving electric field for the cathode to emit electrons and regulate the size of the emission current; the grid 3 is placed in an isolation In the groove of the body; the grid gasket 4 can be made of stainless steel.
具体地,所述栅网3可以采用由钼金属加工成的网状结构,其直径为8mm、厚度为50μm,其中栅孔长度为160μm、栅格宽度为40μm;所述栅网垫片4可以采用不锈钢,其直径为20mm、厚度为1mm。Specifically, the grid 3 can adopt a mesh structure processed from molybdenum metal, with a diameter of 8 mm and a thickness of 50 μm, in which the grid hole length is 160 μm and the grid width is 40 μm; the grid gasket 4 can be Made of stainless steel, its diameter is 20mm and thickness is 1mm.
进一步地,栅网3被放置于阴极与栅极之间的陶瓷隔离体9凹槽中,栅极垫片4被放置于栅网3之上,如图1中3、4和9之间的装配。Further, the grid 3 is placed in the groove of the ceramic isolator 9 between the cathode and the gate, and the gate gasket 4 is placed on the grid 3, as shown between 3, 4 and 9 in Figure 1 assembly.
在一个具体的实施例中,所述共面四极聚焦结构6包括四个圆环电极结构,四个所述圆环电极结构处于同轴共面,圆环电极结构的圆心角为90°,相邻的两个圆环电极结构之间设有隔离结构;所述隔离结构具体可以采用陶瓷隔离体9或采用真空隔离;所述共面四极聚焦结构6的轴向厚度大于下聚焦极5、上聚焦极7的轴向厚度,以增强对电子束的调控能力。In a specific embodiment, the coplanar quadrupole focusing structure 6 includes four annular electrode structures, the four annular electrode structures are coaxial and coplanar, and the central angle of the annular electrode structure is 90°. An isolation structure is provided between two adjacent annular electrode structures; the isolation structure can specifically use ceramic isolators 9 or vacuum isolation; the axial thickness of the coplanar quadrupole focusing structure 6 is greater than the lower focusing electrode 5 , the axial thickness of the upper focusing pole 7 to enhance the ability to control the electron beam.
进一步地,共面四极聚焦结构6如图2所示,所述四个圆环电极结构与下聚焦极5之间通过陶瓷隔离体9隔离后装配;具体地,此处的陶瓷隔离体9有四个凹槽对应共面四极聚焦结构6的四个圆环电极结构,将其对准位置后进行装配,如图1中5、6和9之间的装配。Further, the coplanar quadrupole focusing structure 6 is shown in Figure 2. The four annular electrode structures and the lower focusing electrode 5 are separated by a ceramic isolator 9 before assembly; specifically, the ceramic isolator 9 here There are four grooves corresponding to the four ring electrode structures of the coplanar quadrupole focusing structure 6. They are assembled after aligning them, as shown in the assembly between 5, 6 and 9 in Figure 1.
在一个具体的实施例中,所述阳极8可以采用不锈钢制成,其为中心带圆孔的圆形电极,可实现电子束引出投射。In a specific embodiment, the anode 8 can be made of stainless steel, which is a circular electrode with a circular hole in the center, which can realize the extraction and projection of electron beams.
本实施例中,阴极与栅极之间通过陶瓷隔离体9隔离并对准装配,如图1中1、2、3、4和9之间的装配;栅极与下聚焦极5之间通过陶瓷隔离体9隔离后装配,如图1中3、4、5和9之间的装配;下聚焦极5与共面四极聚焦结构6之间通过陶瓷隔离体9隔离后装配,如图1中5、6和9之间的装配;共面四极聚焦结构6与上聚焦极7之间的连接,通过陶瓷隔离体9隔离后固定装配,如图1中6、7和9的装配;上聚焦极7与阳极8之间通过陶瓷隔离体9隔离后进行对准和固定,如图1中7、8和9的装配。In this embodiment, the cathode and the grid are isolated by a ceramic isolator 9 and assembled in alignment, such as the assembly between 1, 2, 3, 4 and 9 in Figure 1; the grid and the lower focusing electrode 5 are separated by The ceramic isolator 9 is isolated and then assembled, as shown in Figure 1 between 3, 4, 5 and 9; the lower focusing electrode 5 and the coplanar quadrupole focusing structure 6 are separated by a ceramic isolator 9 and then assembled, as shown in Figure 1 The assembly between 5, 6 and 9; the connection between the coplanar quadrupole focusing structure 6 and the upper focusing pole 7 is isolated by the ceramic isolator 9 and then fixed and assembled, as shown in the assembly of 6, 7 and 9 in Figure 1; upper The focusing electrode 7 and the anode 8 are separated by a ceramic isolator 9 and then aligned and fixed, as shown in the assembly of 7, 8 and 9 in Figure 1.
进行如上的步骤,完成对电子枪的制备和装配。Carry out the above steps to complete the preparation and assembly of the electron gun.
本实施例通过在阴极、栅极施加电压,形成电子发射的驱动电场;发射电子通过栅极后进入聚焦区域,聚焦结构包括下聚焦极5、共面四极聚焦结构6、上聚焦极7;当下聚焦极5、共面四极聚焦结构6、上聚焦极7为同电位时可以得到圆形微焦斑的电子束,实现电子束聚焦功能;可以对聚焦结构电极的电压进行调节,通过调节聚焦结构电极的电压可实现电子束直径调控;通过调节施加于共面四极聚焦结构6的电极电压组合来形成非均匀截面空间电场,可实现带状电子束、焦斑径向截面位移等调控功能。因而,本实施例可实现具有电子束聚焦、电子束形转换、电子束焦斑径向移动等调控能力的冷阴极电子枪,其具有焦斑小、可调控、体积小等优点,在小型化的真空电子器件、CT仪器或其他便携式X射线成像设备等中具有应用价值。In this embodiment, voltage is applied to the cathode and the gate to form a driving electric field for electron emission; the emitted electrons enter the focusing area after passing through the gate. The focusing structure includes a lower focusing electrode 5, a coplanar quadrupole focusing structure 6, and an upper focusing electrode 7; When the lower focusing electrode 5, the coplanar quadrupole focusing structure 6, and the upper focusing electrode 7 are at the same potential, a circular micro-focus spot electron beam can be obtained to realize the electron beam focusing function; the voltage of the focusing structure electrode can be adjusted. The voltage of the focusing structure electrode can realize the control of the electron beam diameter; by adjusting the combination of electrode voltages applied to the coplanar quadrupole focusing structure 6 to form a non-uniform cross-sectional spatial electric field, the control of the strip electron beam and the radial cross-sectional displacement of the focal spot can be realized. Function. Therefore, this embodiment can realize a cold cathode electron gun with control capabilities such as electron beam focusing, electron beam shape conversion, and electron beam focal spot radial movement. It has the advantages of small focal spot, controllability, and small size. It can be miniaturized. It has application value in vacuum electronic devices, CT instruments or other portable X-ray imaging equipment.
实施例2Example 2
本实施例中,冷阴极电子枪的工作环境为真空,对真空度的要求为0~5×10-5Pa;冷阴极电子枪中的电源为直流电压源。In this embodiment, the working environment of the cold cathode electron gun is vacuum, and the required vacuum degree is 0 to 5×10 -5 Pa; the power supply in the cold cathode electron gun is a DC voltage source.
本发明的电子束形可调的共面四极聚焦结构冷阴极电子枪工作时,所述阴极底座1接地,所述栅极施加第一电压,其取值范围为300~1kV,形成电子发射的驱动电场;下聚焦极5施加第二电压,所述共面四极聚焦结构6施加第三电压,所述上聚焦极7施加第四电压,三者的取值范围皆为0~350V,所述阳极8施加第五电压,其取值范围为3~5kV,形成调控电子运动轨迹的电场,以实现电子束聚焦、束形、焦斑径向移动几种调控功能。When the coplanar quadrupole focusing structure cold cathode electron gun with adjustable electron beam shape of the present invention is working, the cathode base 1 is grounded, and the first voltage is applied to the grid, and its value range is 300~1kV, forming an electron emission Driving electric field; the lower focusing electrode 5 applies a second voltage, the coplanar quadrupole focusing structure 6 applies a third voltage, the upper focusing electrode 7 applies a fourth voltage, the value range of the three is 0~350V, so The anode 8 applies a fifth voltage, with a value ranging from 3 to 5 kV, to form an electric field that regulates the trajectory of electrons to achieve several regulatory functions such as electron beam focusing, beam shape, and focal spot radial movement.
在一个具体的实施例中,电子枪可实现圆形电子束聚焦,电子枪中各个电极驱动电压如下:阴极电压为0V,栅极电压为350V,阳极8电压为3kV,上聚焦极5、共面四极聚焦结构6和下聚焦极7三者为同电压,其调整电压范围为100~350V,可实现电子束直径在0.17~2.76mm范围内可调控。In a specific embodiment, the electron gun can achieve circular electron beam focusing. The driving voltage of each electrode in the electron gun is as follows: the cathode voltage is 0V, the grid voltage is 350V, the anode 8 voltage is 3kV, the upper focusing electrode 5, the coplanar four The pole focusing structure 6 and the lower focusing pole 7 have the same voltage, and their adjustment voltage range is 100~350V, which can realize the control of the electron beam diameter in the range of 0.17~2.76mm.
实施例3Example 3
本实施例中,冷阴极电子枪的工作环境为真空,对真空度的要求为0~5×10-5Pa;冷阴极电子枪中的电源为直流电压源。In this embodiment, the working environment of the cold cathode electron gun is vacuum, and the required vacuum degree is 0 to 5×10 -5 Pa; the power supply in the cold cathode electron gun is a DC voltage source.
进一步地,所述第三电压为电压值组合,所述共面四极聚焦结构(7)中的四个圆环电极结构可同时分别施加不同的电压,产生非均匀截面电场,实现对电子束进行束形、焦斑径向移动调控。Further, the third voltage is a combination of voltage values, and the four annular electrode structures in the coplanar quadrupole focusing structure (7) can apply different voltages simultaneously to generate a non-uniform cross-sectional electric field, thereby achieving control of the electron beam. Control the beam shape and focal spot radial movement.
具体地,所述四个圆环电极结构分别为A电极10、B电极11、C电极12和D电极13,可分别施加0~350V的电压以形成不同的电压值组合。Specifically, the four annular electrode structures are respectively A electrode 10, B electrode 11, C electrode 12 and D electrode 13, and voltages of 0 to 350V can be applied respectively to form different voltage value combinations.
本发明中的电子枪可实现圆形电子束转变为带状电子束,电子枪中各个电极的驱动电压如下:阴极电压为0V、栅极电压为350V、阳极8电压为3kV,上聚焦极5、共面四极聚焦结构6和下聚焦极7电压同为350V时,形成如图4(a)所示的电子束光斑,其为圆形电子束。在保证其他电极电压不变的情况下,调整共面四极聚焦结构6中A电极10和C电极12电压为190V时,形成如图4(b)所示的电子束光斑,其为长3.92mm、宽0.15mm的带状电子束。The electron gun in the present invention can transform a circular electron beam into a strip-shaped electron beam. The driving voltage of each electrode in the electron gun is as follows: the cathode voltage is 0V, the grid voltage is 350V, the anode 8 voltage is 3kV, the upper focusing electrode 5, the common When the voltages of the surface quadrupole focusing structure 6 and the lower focusing electrode 7 are both 350V, an electron beam spot as shown in Figure 4(a) is formed, which is a circular electron beam. Under the condition that the voltage of other electrodes remains unchanged, when the voltage of A electrode 10 and C electrode 12 in the coplanar quadrupole focusing structure 6 is adjusted to 190V, an electron beam spot as shown in Figure 4(b) is formed, which is 3.92 in length. mm, 0.15mm wide strip electron beam.
实施例4Example 4
本实施例中,冷阴极电子枪的工作环境为真空,对真空度的要求为0~5×10-5Pa;冷阴极电子枪中的电源为直流电压源。In this embodiment, the working environment of the cold cathode electron gun is vacuum, and the required vacuum degree is 0 to 5×10 -5 Pa; the power supply in the cold cathode electron gun is a DC voltage source.
本发明中的电子枪可实现圆形电子束焦斑的径向移动,电子枪中各个电极驱动电压如下:阴极电压为0V、栅极电压为350V、阳极8电压为3kV、上聚焦极5和下聚焦极7为350V、共面四极聚焦结构6的四个圆环电极电压为120V时,形成如图5(a)所示的电子束光斑。在维持其他电极电压不变的情况下,调整共面四极聚焦结构6中A电极10电压为180V、C电极12电压为60V时,形成如图5(b)所示的电子束光斑,其径向截面上电子束焦斑中心位置相对于图5(a)电子束光斑中心位置向下移动了约1.11mm。通过调节施加于共面四极聚焦结构6电极的电压值组合,可以实现电子束焦斑从径向截面中心位置沿A、B、C、D四个圆环电极方向各移动1.11mm的距离。The electron gun in the present invention can realize the radial movement of the focal spot of the circular electron beam. The driving voltage of each electrode in the electron gun is as follows: the cathode voltage is 0V, the grid voltage is 350V, the anode 8 voltage is 3kV, the upper focusing electrode 5 and the lower focusing electrode When the voltage of pole 7 is 350V and the voltage of the four annular electrodes of the coplanar quadrupole focusing structure 6 is 120V, the electron beam spot shown in Figure 5(a) is formed. While maintaining the voltage of other electrodes unchanged, when the voltage of A electrode 10 in the coplanar quadrupole focusing structure 6 is adjusted to 180V and the voltage of C electrode 12 is 60V, an electron beam spot as shown in Figure 5(b) is formed. The center position of the electron beam focal spot on the radial cross section has moved downward by about 1.11mm relative to the center position of the electron beam spot in Figure 5(a). By adjusting the combination of voltage values applied to the six electrodes of the coplanar quadrupole focusing structure, the electron beam focal spot can be moved by a distance of 1.11 mm from the center position of the radial cross section along the directions of the four ring electrodes A, B, C, and D.
显然,本发明的上述实施例仅仅是为清楚地说明本发明所作的举例,而并非是对本发明的实施方式的限定。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明权利要求的保护范围之内。Obviously, the above-mentioned embodiments of the present invention are only examples to clearly illustrate the present invention, and are not intended to limit the implementation of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention shall be included in the protection scope of the claims of the present invention.
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