CN114501758A - High flux X ray source - Google Patents
High flux X ray source Download PDFInfo
- Publication number
- CN114501758A CN114501758A CN202210024865.6A CN202210024865A CN114501758A CN 114501758 A CN114501758 A CN 114501758A CN 202210024865 A CN202210024865 A CN 202210024865A CN 114501758 A CN114501758 A CN 114501758A
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- ring
- electrode
- cathode
- electron beam
- ray source
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- 230000004907 flux Effects 0.000 title claims description 20
- 238000010894 electron beam technology Methods 0.000 claims abstract description 56
- 239000002131 composite material Substances 0.000 claims abstract description 26
- 239000010432 diamond Substances 0.000 claims abstract description 20
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000013077 target material Substances 0.000 claims abstract description 7
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009825 accumulation Methods 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004846 x-ray emission Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/02—Constructional details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/02—Constructional details
- H05G1/025—Means for cooling the X-ray tube or the generator
Landscapes
- X-Ray Techniques (AREA)
Abstract
The invention relates to a high-flux X-ray source. The device comprises: the electron beam emitting device, the electron focusing ring and the composite anode are arranged from top to bottom in sequence; the composite anode sequentially comprises an anode target material, a diamond sheet and a substrate from top to bottom; and the electron beams emitted by the electron beam emitting device reach the anode target of the composite anode through the electron focusing ring. The invention can quickly dissipate the high heat generated by the electron beam to prevent the anode from generating high-temperature melting phenomenon caused by heat accumulation.
Description
Technical Field
The invention relates to the technical field of X-ray sources, in particular to a high-flux X-ray source.
Background
According to the current working principle of the X-ray source, the action process of bombarding the anode by high-energy electrons is complex, wherein the conversion efficiency of exciting to generate X-rays is low (about 1%), and most of the X-rays are converted into heat energy. In order to indirectly increase the flux of emitted X-rays, the number of electrons emitted from the cathode of the X-ray source needs to be increased, and the thermal performance of the anode needs to be improved. Firstly, because the increase of the number of electrons represents that the electron beam density received in the unit area of the anode is increased, the increase of the electron beam density of the cathode of the X-ray source is the increase of the tube current; secondly, due to the limited focal spot size of the X-ray source, the heat generated by the high density electron beam is high and concentrated in the focal area, which requires high thermal performance of the anode, including the thermal capacity and thermal conductivity of the material.
The tube current of the X-ray source produced by the prior art is generally about 1-5 mA, and the tube current of part of the imported high-flux sources is about 30-50 mA. It can be seen that the larger tube current can effectively increase the outgoing X-ray flux, reduce the detection exposure time, and improve the detection efficiency, but the outgoing X-ray emission flux cannot be further improved according to the emission mode of the current X-ray cathode, and even if the tube current is improved, the current common anode cannot directly bear the heat with high heat flux density, so that the anode is melted and damaged.
Disclosure of Invention
The invention aims to provide a high-flux X-ray source which can quickly dissipate the high heat generated by an electron beam and prevent the anode from generating a high-temperature melting phenomenon caused by heat accumulation.
In order to achieve the purpose, the invention provides the following scheme:
a high-flux X-ray source, comprising: the electron beam emitting device, the electron focusing ring and the composite anode are arranged from top to bottom in sequence; the composite anode sequentially comprises an anode target material, a diamond sheet and a substrate from top to bottom; and the electron beams emitted by the electron beam emitting device reach the anode target of the composite anode through the electron focusing ring.
Optionally, the electron beam emission device includes: the electron beam multiplier comprises a cathode structure and an electron beam multiplication structure which are sequentially arranged from top to bottom, wherein the electron beam emitted by the cathode structure passes through the electron beam multiplication structure.
Optionally, the cathode structure comprises: a cathode cover, a cathode, a first fixed electrode and a second fixed electrode; the cathode is arranged in the cathode cover, and the first fixed electrode penetrates through the cathode cover to be connected with the cathode; the second fixed electrode is connected with the cathode cover.
Optionally, the cathode structure further comprises: and the first fixed electrode penetrates through the ceramic base and is connected with the cathode.
Optionally, the electron beam multiplying structure comprises: third fixed electrode, fourth fixed electrode and from top to bottom set gradually: the device comprises a first electrode ring, a microchannel plate and a second electrode ring; the first electrode ring is connected with the third fixed electrode, the fourth fixed electrode is connected with the second electrode ring, and electron beams emitted by the cathode structure sequentially pass through the inner ring of the first electrode ring, the microchannel plate and the inner ring of the second electrode ring.
Optionally, the electron beam multiplying structure further comprises: the insulating pressure ring and the microchannel plate fixing sleeve; the second electrode ring is arranged on the insulating pressure sheet ring, and the first electrode ring, the microchannel plate, the second electrode ring and the insulating pressure sheet ring are all fixedly arranged in the microchannel plate fixing sleeve.
Optionally, the composite anode further includes: a solder disposed at a connection of the diamond table and the substrate, the solder for connecting the diamond table and the substrate.
Optionally, a groove is formed in the upper surface of the substrate, and the diamond sheet is disposed in the groove.
Optionally, the anode target is made of metal tungsten.
Optionally, the microchannel plate fixing sleeve is a hollow cylinder without a bottom surface; the top surface of the microchannel plate fixing sleeve is of a circular ring structure, and electron beams emitted by the cathode structure sequentially pass through the inner ring of the top surface, the inner ring of the first electrode ring, the microchannel plate, the inner ring of the second electrode ring and the inner ring of the insulating pressure plate ring.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the high-flux X-ray source of the invention comprises: the electron beam emitting device, the electron focusing ring and the composite anode are arranged from top to bottom in sequence; the composite anode sequentially comprises an anode target material, a diamond sheet and a substrate from top to bottom; the electron beam emitted by the electron beam emitting device reaches the anode target of the composite anode through the electron focusing ring, and by adopting the composite anode, the rapid heat conduction is generated in the axial direction among materials by utilizing the characteristic of the rapid axial heat transfer rate of diamond, the expansion of heat flow is radially realized, the heat flow density in unit area is reduced, and the heat dissipation capability of the anode of the X-ray source is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a side sectional view of a high flux X-ray source provided by an embodiment of the present invention;
fig. 2 is a side sectional view of an electron beam emitting apparatus according to an embodiment of the present invention;
FIG. 3 is a front view of a cathode structure provided by an embodiment of the present invention;
fig. 4 is a bottom view of a cathode structure provided in an embodiment of the present invention;
FIG. 5 is a bottom view of an electron beam multiplying structure provided by an embodiment of the present invention;
FIG. 6 is a side cross-sectional view of an electron beam multiplying structure provided in an embodiment of the present invention;
FIG. 7 is an enlarged view of a portion of a composite anode according to an embodiment of the present invention;
fig. 8 is a schematic diagram of the general structure of a high-flux X-ray source provided by an embodiment of the invention.
Description of the symbols:
i-high flux X-ray source, II-electron beam emission device, 1-quartz shell, 2-1-first fixed electrode, 2-2-second fixed electrode, 2-3-third fixed electrode, 2-4-fourth fixed electrode, 3-electron focusing ring, 4-composite anode, 5-high voltage connection hole, 6-cathode structure, 7-electron beam multiplication structure, 8-cathode cover, 9-ceramic base, 10-cathode, 11-microchannel plate fixing sleeve, 12-insulating pressure sheet ring, 12-1-concave point, 13-1-first electrode ring, 13-2-second electrode ring, 14-microchannel plate, 15-anode target, 16-diamond sheet, 17-solder, 18-copper column.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
As shown in fig. 1 and 8, an embodiment of the present invention provides a high-flux X-ray source I, including: the electron beam emitting device II, the electron focusing ring 3 and the composite anode 4 are arranged from top to bottom in sequence; as shown in fig. 7, the composite anode 4 sequentially includes an anode target 15, a diamond sheet 16 and a substrate from top to bottom; the electron beam emitted by the electron beam emitting device II reaches the anode target 15 of the composite anode 4 through the electron focusing ring 3.
As an alternative embodiment, the electron beam emitting device II, the electron focusing ring 3 and the composite anode 4 are encapsulated in the quartz casing 1, and the positions of the three devices are fixed and positioned by external electrodes.
As an alternative embodiment, as shown in fig. 2, the electron beam current emission device II includes: the cathode structure 6 and the electron beam multiplication structure 7 are arranged from top to bottom in sequence, and electron beams emitted by the cathode structure 6 pass through the electron beam multiplication structure 7.
As an alternative embodiment, as shown in fig. 3 and 4, the cathode structure 6 includes: a cathode cover 8, a cathode 10, a first fixed electrode 2-1 and a second fixed electrode 2-2; the cathode 10 is arranged inside the cathode cover 8, and the first fixed electrode 2-1 penetrates through the cathode cover 8 to be connected with the cathode 10; the second fixed electrode 2-2 is connected with the cathode cover 8, and the first fixed electrode 2-1 and the second fixed electrode 2-2 penetrate through the quartz shell 1 to be externally connected with a power supply.
As an alternative embodiment, the cathode structure 6 further comprises: the first fixed electrode 2-1 penetrates through the ceramic base 9 and is connected with the cathode 10, as shown in fig. 3, specifically, the first fixed electrode 2-1 penetrates through the quartz shell 1 and the ceramic base 9 of the X-ray source and is connected with the ceramic base 9 to form a whole, the ceramic base 9 is arranged inside the cathode cover 8 and is in pin connection with the cathode cover 8 to form a whole, the cathode 10 is arranged below the ceramic base 9, and the second fixed electrode 2-2 penetrates through the quartz shell 1 packaged by the X-ray source and is welded with the cathode cover 8 to form a whole.
In an alternative embodiment, the cathode 10 is a solenoid structure having a certain length, and the first and second ends thereof are extended by a certain length and are connected to the first fixed electrode 2-1 by pressing.
As an alternative embodiment, as shown in fig. 5 and 6, the electron beam multiplying structure 7 includes: third fixed electrode 2-3, fourth fixed electrode 2-4 and from top to bottom set gradually: a first electrode ring 13-1, a microchannel plate 14 and a second electrode ring 13-2; the first electrode ring 13-1 is connected with the third fixed electrode 2-3, the fourth fixed electrode 2-4 is connected with the second electrode ring 13-2, the electron beam emitted by the cathode structure 6 sequentially passes through the inner ring of the first electrode ring 13-1, the microchannel plate 14 and the inner ring of the second electrode ring 13-2, and the third fixed electrode 2-3 and the fourth fixed electrode 2-4 penetrate through the quartz casing 1 to be externally connected with a power supply.
As an alternative embodiment, the electron beam multiplying structure 7 further comprises: an insulating pressure ring 12 and a microchannel plate fixing sleeve 11; the second electrode ring 13-2 is arranged on the insulating pressure plate ring 12, and the first electrode ring 13-1, the microchannel plate 14, the second electrode ring 13-2 and the insulating pressure plate ring 12 are all fixedly arranged in the microchannel plate fixing sleeve 11. Specifically, as shown in fig. 5 and 6, the electron beam multiplying structure 7 includes a microchannel plate fixing sleeve 11, an insulating pressing sheet arranged inside the microchannel plate fixing sleeve 11, a second electrode ring 13-2 arranged inside the microchannel plate fixing sleeve 11 and located above the insulating pressing sheet ring 12, a microchannel plate 14 arranged inside the microchannel plate fixing sleeve 11 and located above the second electrode ring 13-2, a first electrode ring 13-1 arranged inside the microchannel plate fixing sleeve 11 and located above the microchannel plate 14, a third fixed electrode 2-3 penetrating through the microchannel plate fixing sleeve 11 and contacting the first electrode ring 13-1, and a fourth electrode ring 2-4 contacting the second electrode ring 13-2, the microchannel plate 14 is fixed by the first electrode ring 13-1 and the second electrode ring 13-2, the first electrode ring 13-1 and the second electrode ring 13-2 simultaneously provide a voltage for the microchannel plate 14, the insulating pressure plate ring 12 is rotationally pressed by utilizing the concave points 12-1 to fix the first electrode ring 13-1, the second electrode ring 13-2 and the microchannel plate 14 in the microchannel plate fixing sleeve 11, and the microchannel plate fixing sleeve 11 is contacted with the first electrode ring 13-1 and the second electrode ring 13-2 to form a whole.
As an alternative embodiment, the electronic focusing ring 3 is a copper metal ring with a certain thickness, the fifth fixed electrode 2-5 penetrates through the quartz shell 1 of the X-ray source package to be connected with the electronic focusing ring 3 to form a whole, and the fifth fixed electrode 2-5 is externally connected with a power supply system to provide voltage for the electronic focusing ring 3. By external power supply, the electron focusing ring 3, the first electrode ring 13-1, the second electrode ring 13-2 and the composite anode 4 form an electron lens structure, the voltage value applied by the first electrode ring 13-1 and the second electrode ring 13-2 is V1, the voltage value applied by the electron focusing ring 3 is V2, and the voltage value applied by the composite anode 4 is V3, wherein the V2 value is smaller than V1 and V3, so that an electrostatic field area with low and adjustable electric potential can be formed at a position below the emission end of the high-flux electron beam emission structure and at a position above the composite anode 4, and the electrostatic field area is used for focusing the secondary emission electron beam to a designated focus area range on the surface of the anode target 15.
As an alternative embodiment, as shown in fig. 7, the composite anode 4 further includes: solder 17, the solder 17 is arranged at the connection of the diamond sheet 16 and the substrate, and the solder 17 is used for connecting the diamond sheet 16 and the substrate.
As an alternative embodiment, the upper surface of the substrate is provided with a groove, and the diamond table 16 is arranged in the groove, which may be a circular groove.
As an optional implementation manner, the substrate is a copper column 18, the upper surface is a wedge-shaped structure, the inclination angle is 10-20 °, the substrate is packaged inside a quartz shell 1 packaged by an X-ray source, the lower surface of the substrate is a power supply end and used for fixing and supplying power at high voltage, the substrate penetrates through the quartz shell 1 packaged by the X-ray source and is connected with an external power supply electrode through a high-voltage connection hole 5 arranged inside, a diamond sheet 16 is embedded in a groove of the copper column, after the diamond sheet and the copper column are embedded, the surface of the diamond sheet and the copper column are integrally coated with a film by adopting an anode target material, and the anode target material is attached to the upper surfaces of the diamond sheet and the substrate to form a film with the thickness of micrometer.
In an alternative embodiment, the material of the anode target 15 is metal tungsten.
As an alternative embodiment, the microchannel plate fixing sleeve 11 is a hollow cylinder without a bottom surface; the top surface of the microchannel plate fixing sleeve 11 is of a circular ring structure, and an electron beam emitted by the cathode structure 6 sequentially passes through the inner ring of the top surface, the inner ring of the first electrode ring 13-1, the microchannel plate 14, the inner ring of the second electrode ring 13-2 and the inner ring of the insulating pressure plate ring 12.
The invention has the following technical effects:
the invention relates to a source with higher X-ray emission flux, which is mainly applied to an environment with high requirement on X-ray flux in an X-ray detection system.
The invention utilizes the secondary multiplication effect of the microchannel plate to multiply the number of electrons emitted by the cathode for multiple times, thereby improving the efficiency of exciting the anode to generate X-rays by electrons in unit time from probability and indirectly improving the flux of emitting the X-rays. Meanwhile, the adopted composite anode has high heat conductivity coefficient and heat load capacity, can quickly dissipate the high heat generated by the electron beam, and prevents the high-temperature melt-down phenomenon caused by heat accumulation.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the foregoing, the description is not to be taken in a limiting sense.
Claims (10)
1. A high-flux X-ray source, comprising: the electron beam emitting device, the electron focusing ring and the composite anode are arranged from top to bottom in sequence; the composite anode sequentially comprises an anode target material, a diamond sheet and a substrate from top to bottom; and the electron beams emitted by the electron beam emitting device reach the anode target of the composite anode through the electron focusing ring.
2. The high flux X-ray source of claim 1, wherein said electron beam current emitting device comprises: the electron beam multiplier comprises a cathode structure and an electron beam multiplication structure which are sequentially arranged from top to bottom, wherein the electron beam emitted by the cathode structure passes through the electron beam multiplication structure.
3. High flux X-ray source according to claim 2, wherein the cathode structure comprises: a cathode cover, a cathode, a first fixed electrode and a second fixed electrode; the cathode is arranged in the cathode cover, and the first fixed electrode penetrates through the cathode cover to be connected with the cathode; the second fixed electrode is connected with the cathode cover.
4. A high flux X-ray source in accordance with claim 3, wherein said cathode structure further comprises: and the first fixed electrode penetrates through the ceramic base and is connected with the cathode.
5. A high flux X-ray source in accordance with claim 2, wherein said electron beam multiplying structure comprises: third fixed electrode, fourth fixed electrode and from top to bottom set gradually: the device comprises a first electrode ring, a microchannel plate and a second electrode ring; the first electrode ring is connected with the third fixed electrode, the fourth fixed electrode is connected with the second electrode ring, and electron beams emitted by the cathode structure sequentially pass through the inner ring of the first electrode ring, the microchannel plate and the inner ring of the second electrode ring.
6. A high flux X-ray source in accordance with claim 5, wherein said electron beam multiplying structure further comprises: the insulating pressure ring and the microchannel plate fixing sleeve; the second electrode ring is arranged on the insulating pressure sheet ring, and the first electrode ring, the microchannel plate, the second electrode ring and the insulating pressure sheet ring are all fixedly arranged in the microchannel plate fixing sleeve.
7. A high flux X-ray source in accordance with claim 1, wherein said composite anode further comprises: a solder disposed at a connection of the diamond table and the substrate, the solder for connecting the diamond table and the substrate.
8. A high flux X-ray source according to claim 1 wherein the upper surface of the substrate is provided with a recess and the diamond sheet is disposed within the recess.
9. A high flux X-ray source in accordance with claim 1, wherein the anode target material is metal tungsten.
10. A high flux X-ray source in accordance with claim 6 wherein said microchannel plate holder is a hollow cylinder without a bottom surface; the top surface of the microchannel plate fixing sleeve is of a circular structure, and electron beams emitted by the cathode structure sequentially pass through the inner ring of the top surface, the inner ring of the first electrode ring, the microchannel plate, the inner ring of the second electrode ring and the inner ring of the insulating pressure plate ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210024865.6A CN114501758A (en) | 2022-01-11 | 2022-01-11 | High flux X ray source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210024865.6A CN114501758A (en) | 2022-01-11 | 2022-01-11 | High flux X ray source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114501758A true CN114501758A (en) | 2022-05-13 |
Family
ID=81509831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210024865.6A Pending CN114501758A (en) | 2022-01-11 | 2022-01-11 | High flux X ray source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114501758A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440553A (en) * | 2022-09-21 | 2022-12-06 | 无锡日联科技股份有限公司 | Control system and method of micro-focus X-ray source |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2334194B1 (en) * | 1975-12-05 | 1978-05-12 | Cgr Mev | |
| EP0432568A2 (en) * | 1989-12-11 | 1991-06-19 | General Electric Company | X ray tube anode and tube having same |
| US5099128A (en) * | 1989-03-17 | 1992-03-24 | Roger Stettner | High resolution position sensitive detector |
| JPH10283979A (en) * | 1997-04-10 | 1998-10-23 | Hamamatsu Photonics Kk | Electron detector |
| US20020191746A1 (en) * | 2001-06-19 | 2002-12-19 | Mark Dinsmore | X-ray source for materials analysis systems |
| JP2009212058A (en) * | 2008-03-06 | 2009-09-17 | Rigaku Corp | X-ray generator, x-ray analysis device, x-ray transmission image measurement device, and x-ray interferometer |
| JP2011181336A (en) * | 2010-03-01 | 2011-09-15 | Hamamatsu Photonics Kk | Microchannel plate assembly |
| CN102420088A (en) * | 2011-12-05 | 2012-04-18 | 李驰 | Back-grid-type grid-controlled cold-cathode X-ray tube |
| CN105702544A (en) * | 2016-01-21 | 2016-06-22 | 中国电子科技集团公司第三十八研究所 | Diamond ray target, preparation method and application |
| CN106960775A (en) * | 2017-02-14 | 2017-07-18 | 南京航空航天大学 | A kind of Laser Modulation Pulsed Xray source communicated for space X ray |
| KR20190018896A (en) * | 2017-08-16 | 2019-02-26 | (주) 브이에스아이 | X-ray tube having a micro channel plate |
-
2022
- 2022-01-11 CN CN202210024865.6A patent/CN114501758A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2334194B1 (en) * | 1975-12-05 | 1978-05-12 | Cgr Mev | |
| US5099128A (en) * | 1989-03-17 | 1992-03-24 | Roger Stettner | High resolution position sensitive detector |
| EP0432568A2 (en) * | 1989-12-11 | 1991-06-19 | General Electric Company | X ray tube anode and tube having same |
| JPH10283979A (en) * | 1997-04-10 | 1998-10-23 | Hamamatsu Photonics Kk | Electron detector |
| US20020191746A1 (en) * | 2001-06-19 | 2002-12-19 | Mark Dinsmore | X-ray source for materials analysis systems |
| JP2009212058A (en) * | 2008-03-06 | 2009-09-17 | Rigaku Corp | X-ray generator, x-ray analysis device, x-ray transmission image measurement device, and x-ray interferometer |
| JP2011181336A (en) * | 2010-03-01 | 2011-09-15 | Hamamatsu Photonics Kk | Microchannel plate assembly |
| CN102420088A (en) * | 2011-12-05 | 2012-04-18 | 李驰 | Back-grid-type grid-controlled cold-cathode X-ray tube |
| CN105702544A (en) * | 2016-01-21 | 2016-06-22 | 中国电子科技集团公司第三十八研究所 | Diamond ray target, preparation method and application |
| CN106960775A (en) * | 2017-02-14 | 2017-07-18 | 南京航空航天大学 | A kind of Laser Modulation Pulsed Xray source communicated for space X ray |
| KR20190018896A (en) * | 2017-08-16 | 2019-02-26 | (주) 브이에스아이 | X-ray tube having a micro channel plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115440553A (en) * | 2022-09-21 | 2022-12-06 | 无锡日联科技股份有限公司 | Control system and method of micro-focus X-ray source |
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