CN106960775A - A kind of Laser Modulation Pulsed Xray source communicated for space X ray - Google Patents
A kind of Laser Modulation Pulsed Xray source communicated for space X ray Download PDFInfo
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- CN106960775A CN106960775A CN201710078006.4A CN201710078006A CN106960775A CN 106960775 A CN106960775 A CN 106960775A CN 201710078006 A CN201710078006 A CN 201710078006A CN 106960775 A CN106960775 A CN 106960775A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/025—X-ray tubes with structurally associated circuit elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
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Abstract
The present invention discloses a kind of Laser Modulation Pulsed Xray source communicated for space X ray, including optical fiber interface, cathode substructure, Laser Modulation negative electrode, focusing electrode, depassing unit, vacuum chamber shell and anode metal target.Laser Modulation negative electrode is made up of negative negative electrode affinity photocathode, microchannel plate and cathode shell.General principle is to produce photoelectron using laser excitation photocathode, photoelectron is doubled through microchannel plate again, electronics after multiplication, through anode high voltage and focusing electrode collective effect, produces the electron beam of high speed strong-focusing, beam bombardment anode metal target simultaneously finally produces X-ray in vacuum chamber.The characteristics of possessing Gao Zhongying narrow spaces due to input laser, changed by the effective signal of Laser Modulation Pulsed Xray source, enable to the characteristics of X-ray also possesses Gao Zhongying narrow spaces, and input laser pulse signal can well be reduced, so as to realize modulation of the laser pulse signal to X-ray pulse signal.
Description
Technical field：
It is to realize space X ray the present invention relates to a kind of Laser Modulation Pulsed Xray source communicated for space X ray
The key device of communication, the X-ray detector performance test and navigation that the present apparatus is equally applicable to X-ray pulsar navigation is calculated
Method confirmatory experiment.
Background technology：
X-ray communicates --- and a kind of mode that information is communicated is carried with X-ray, is a kind of potential revolutionary skill
Art, it enables to interplanetary travel person to carry out data transmission extraterrestrial on every number of seconds Gbit speed.Navigate in the U.S.
Empty space agency Ge Dade space flights center (Goddard Space Flight Center) astrophysics scholar Keith
Doctor Gendreau, the concept that Aerospace Satellite and aircraft point-to-point communication are realized using X-ray was proposed in 2007, and first
The secondary feasibility for demonstrating X-ray communication.Zhao Baosheng team of Xian Inst. of Optics and Precision Mechanics, Chinese Academy of Sciences proposes one
Grid-controlled X-ray modulation source is planted, the X-ray communication modulated based on voice signal better than 20kbit/s is realized, preliminary experiment is tested
This innovative imagination is demonstrate,proved.The technology of X-ray emission and detection is limited by, current X-ray communication system is based on intensity
Modulation/direct Cleaning Principle, i.e., make digital communication signal load on X-ray pulse sequence by controlling the presence or absence of X-ray pulse
Upper to be launched, receiving terminal is detected and demodulated the information for obtaining and being carried in X-ray pulse sequence by pulse signals.At this
Under the communication pattern of sample, traffic rate is largely limited by x-ray source impulse ejection speed, and existing for X-ray
The problem of Pulsed Xray source of communication has underpower, impulse ejection speed is relatively low, then greatly limit X-ray communication
Speed.So develop a kind of X-ray pulse emission source that is high-power, being capable of High Speed Modulation just very necessary.
The content of the invention：
The present invention combines the mature technology of laser communication, on the Research foundation of existing X-ray tube and X-ray detection X, carries
A kind of Laser Modulation Pulsed Xray source communicated for space X ray is gone out.
The present invention is adopted the following technical scheme that：A kind of Laser Modulation Pulsed Xray source communicated for space X ray, its
It is characterised by：Including optical fiber interface, cathode substructure, Laser Modulation negative electrode, focusing electrode, depassing unit, vacuum chamber shell with
And anode metal target, the optical fiber interface is connected with the optical fiber for inputting laser signal, Laser Modulation negative electrode and optical fiber interface
It is adjacent, and be fixed on by cathode substructure on vacuum chamber shell, focusing electrode is located on the madial wall of vacuum chamber shell, removes
Device of air is located on the madial wall of vacuum chamber shell and positioned at the lower section of focusing electrode, and anode metal target is fixed on vacuum chamber
On shell.
Further, the Laser Modulation negative electrode is formed by stacking by negative negative electrode affinity photocathode with microchannel plate, and
Outside is enclosed with cathode shell, and the negative negative electrode affinity photocathode is by substrate of glass, Si3N4Antireflection layer, Window layer, arsenic
Change gallium GaAs emission layers, Cs:O active coatings are brought into close contact the sandwich construction to be formed from top to bottom.
Further, because doping way difference is divided into two regions inside the GaAs GaAs emission layers：One area is
Big gradient index doped region, meets：Hole doping concentration in one area at any thickness x is N (x)=N0Exp (- β x), its
Middle factor beta=4 × ln10/L, L is the thickness in the area of GaAs GaAs emission layers one, is i.e. GaAs GaAs transmittings at 0 in thickness
The left interface in the area of floor one, hole doping concentration N (0) is 1019cm-3Magnitude, and be i.e. GaAs GaAs emission layers at L in thickness
The right interface in one area, hole doping concentration N (L) is 1015cm-3An intensity is produced in magnitude, an area isIt is even
Highfield, wherein k are Boltzmann constant, and temperature T=300K, q are electronic charge, and 2nd area are heavily doped region, and 2nd area mix
Miscellaneous concentration NA1018~1019cm-3Between, thickness is sub-micrometer scale.
Further, the microchannel plate is made up of round sheet lead glass, and thickness D is 300~500 μm, microchannel plate
Two faces be coated with electrode, electrode two ends plus high-pressure V1, V1>=1000V, and electronics output face is high potential.
Further, the microchannel plate opening diameter is 5~20 μm, and microchannel angle of inclination is that θ is 8~10 °, work
Area diameter L1>=14.5mm, electrode district diameter L2>=17mm, integral diameter L3≥17.9mm。
Further, the focusing electrode is hollow cylindrical structure, and internal diameter >=18mm is made of an electrically conducting material, and keeps poly-
Electrical potential difference V between burnt electrode and Laser Modulation negative electrode2For 100~900V, and focusing electrode is high potential end, acts on anode
Beam spot area≤2mm on metallic target2。
Further, the anode metal target is transmission-type thin target, is made up of argent Ag, and thickness is 2~8 μm, outgoing
Face is coated with the thick beryllium Be material Window layers of 0.1~0.8mm, electrical potential difference V between anode metal target and focusing electrode3Maintain 20kV~
Between 100kV, and anode metal target is high potential end.
The present invention has the advantages that：Laser Modulation Pulsed Xray source of the present invention can transmitted pulse width be ps magnitudes
Pulsed X-ray, X-ray pulse width and position by laser pulse accuracy controlling, and can input laser pulse repeat frequency
Rate is less than 1010In the case of, realize good reduction of the X-ray pulse signal to input laser signal.
Brief description of the drawings：
Fig. 1 is X-ray communication transmitting terminal schematic diagram.
Fig. 2 is the Laser Modulation Pulsed Xray source structural representation communicated for space X ray.
Fig. 3 is Laser Modulation cathode construction schematic diagram.
Fig. 4 is negative negative electrode affinity materials band schematic diagram.
Fig. 5 is microchannel plate schematic diagram.
Fig. 6 is vacuum chamber schematic diagram.
Fig. 7 is the Laser Modulation Pulsed Xray source impulse response figure communicated for space X ray.
Wherein reference is：1-optical fiber interface, 2-cathode substructure, 3-Laser Modulation negative electrode, 4-focusing electrode,
5-depassing unit, 6-vacuum chamber shell, 7-anode metal target, 31-substrate of glass, 32-Si3N4Antireflection layer, 33-window
Mouth layer, 34-GaAs GaAs emission layers, 35-Cs:O active coatings, 36-microchannel plate, 37-cathode shell.
Embodiment：
The present invention proposes a kind of Laser Modulation Pulsed Xray source communicated for space X ray, is embodied as follows.X is penetrated
Line communicate transmitting terminal as shown in figure 1, from possess Gao Zhongying, narrow spaces feature pulse laser, its output wavelength is
The laser pulse signal of (850nm) short pulse duration (5-20ps), signal of communication is loaded by laser modulator, by swashing for carrying information
The light pulse signal laser input through Optical Fiber Transmission to Laser Modulation Pulsed Xray source mouthful, by conversion, in Laser Modulation arteries and veins
Rush the X-ray pulse of the output port output loading signal of x-ray source.
As shown in Fig. 2 the Laser Modulation Pulsed Xray source that the present invention communicates for space X ray, including：Optical fiber interface
1st, cathode substructure 2, Laser Modulation negative electrode 3, focusing electrode 4, depassing unit 5, vacuum chamber shell 6 and anode metal target 7.Institute
State optical fiber interface 1 with the optical fiber for inputting laser signal to be connected, Laser Modulation negative electrode 3 is adjacent with optical fiber interface 1, and passes through the moon
Pole base 2 is fixed on vacuum chamber shell 6, and focusing electrode 4 is located on the madial wall of vacuum chamber shell 6, depassing unit 5
In on the madial wall of vacuum chamber shell 6 and positioned at the lower section of focusing electrode 4, anode metal target 7 is fixed on vacuum chamber shell 6
On.
As shown in figure 1, Laser Modulation Pulsed Xray source, is directly connected to by optical fiber interface 1 and optical fiber, laser pulse from
High recurrent frequency pulse laser device is exported, by laser modulator load information, through Optical Fiber Transmission to Laser Modulation Pulsed Xray source,
Laser pulse is converted to electronic impulse with the effect of Laser Modulation negative electrode 3.
Laser Modulation Pulsed Xray source can transmitted pulse width be ps magnitudes pulsed X-ray, X-ray pulse width and position
Put by laser pulse accuracy controlling, and 10 can be less than in input laser pulse repetition frequency10In the case of, realize X-ray arteries and veins
Rush good reduction of the signal to input laser signal.
Laser Modulation negative electrode 3 is used for the photon for absorbing incident laser, and electricity is efficiently converted into by external photoeffect
Son, and by effect of secondary electron emission by electron multiplication, output is by a large amount of electric molecular electron clouds.
Pulsewidth can be converted into the electronic impulse of picosecond magnitude by Laser Modulation negative electrode 3 for the laser pulse of picosecond magnitude,
And 10 can be less than in input laser pulse repetition frequency10In the case of, realize electronic pulse signal to input laser signal
Good reduction.
As shown in figure 3, Laser Modulation negative electrode 3 is formed by stacking by negative negative electrode affinity photocathode with microchannel plate (36),
And outside is enclosed with cathode shell (37).The negative negative electrode affinity photocathode is by substrate of glass 31, Si3N4Antireflection layer 32,
Window layer 33, GaAs GaAs emission layers 34, Cs:O active coatings 35 are brought into close contact the sandwich construction to be formed from top to bottom.
Wherein bear negative electrode affinity photocathode preparation process as follows：Rheotaxial growth GaAs is used on gaas substrates
Aluminium GaAlAs barrier layers/GaAs GaAs emission layers/Aluminum gallium arsenide Ga1-xAlxThe sandwich construction of As Window layers；Then in arsenic
Gallium aluminium Ga1-xAlxWith the Si that semiconductor passivation process deposits thickness is 0.1 μm in As Window layers3N4Anti-reflection film, then thereon
Deposit one layer of SiO2, for destroying Si when preventing Nian Jie with glass3N4And prevent harmful element from entering Aluminum gallium arsenide Ga1-xAlxAs
Window layer/GaAs GaAs emission layers；The said structure optical glass thick with 2~5mm is bonded together；Use selective corrosion
Method remove GaAs substrates and Aluminum gallium arsenide GaAlAs barrier layers, the Transmission-mode GaAs photocathode group of four-layer structure is made
Part；Transmission-mode GaAs photocathode component will be purified by the heating of Chemical cleaning and ultrahigh vacuum, surface contamination is removed, obtain
To atomically clean surfaces；Caesium Cs, oxygen O are finally covered in table with sequence alternate according to a certain percentage in ultra-high vacuum system
On face, the vacuum level on surface is dropped to below conduction band bottom, that is, negative negative electrode affinity (NEA) state is reached, so that cathode
Interior photoelectron is easier to escape into vacuum.
Negative negative electrode affinity (NEA-GaAs) photocathode, for realizing that laser pulse, to the conversion of electronic impulse, is being protected
Also there is the characteristics of response speed is fast while demonstrate,proving high-quantum efficiency.
Because doping way difference is divided into two regions inside GaAs GaAs emission layers 34, as shown in figure 4, an area is big
Gradient index doped region, meets：Hole doping concentration in one area at any thickness x is N (x)=N0Exp (- β x), wherein
Factor beta=4 × ln10/L, L is the thickness in the area of GaAs GaAs emission layers one, at thickness is 0, i.e. GaAs GaAs emission layers
The left interface in one area, hole doping concentration N (0) is 1019cm-3Magnitude, and be i.e. GaAs GaAs emission layers one at L in thickness
The right interface in area, hole doping concentration N (L) is 1015cm-3Magnitude.In this case, one will be produced in an area to photoelectricity
Son transports very favorable intensityUniform electric field, wherein k be Boltzmann constant, temperature T=300K, q are
Electronic charge.2nd area are heavily doped region, two area doping concentration NASelection is 1018~1019cm-3Between, thickness is sub-micron
Magnitude, to ensure that negative negative electrode affinity photocathode is passing through Cs:After O active coatings, electronic barrier is completely eliminated at surface, i.e.,
Electron affinity EAFor negative value, now energy of photoelectron need to only reach energy gap and electron affinity sum Eg+EAJust it can escape
Go out, due to now electron affinity EAFor negative value, electrons are easily transmitted into vacuum, therefore, it is possible to obtain more than 30%
Quantum efficiency.Fig. 4 is the band structure figure of GaAs photocathodes, as illustrated, when there is a preferable δ (t) in the external world, i.e.,：Arteries and veins
It is 0 to rush width, is highly 1, when pulse of the position at t is incident, and some photons are included in this light pulse, and photon passes through window
Floor enters the area of GaAs GaAs emission layers one, and photon is absorbed by GaAs GaAs materials, and the energy of photon is by GaAs GaAs materials
The energy of a part of electronics is from valence band E in materialVIt is energized into conduction band EC, the electronics of these excitation state is by the area of emission layer one
Build electric field EinEffect is lower quick to the movement of vacuum direction, is lost during movement due to the collision with GaAs material atoms
Energy, so only some excitation state electronic energy gets at the interface up to GaAs negative electrodes and vacuum, due to GaAs GaAs hairs
The areas of She Ceng bis- and Cs:The common effect of O active coatings, vacuum level EvacLess than these arrival interfaces electronics energy, because
This these electronics can be transmitted directly to vacuum, without being fettered by surface potential barrier.Due in GaAs GaAs emission layers one
There is electric field E in areainEffect, electronics can rapidly be transmitted into the electronic impulse J in vacuum, therefore the vacuum being transmitted into
(t) the characteristics of will be provided with narrow spaces.The big negative negative electrode affinity photocathode of gradient index doping can realize output electronics
Pulse J (t) halfwidths are less than 21ps, and time delay is less than 10ps.
As shown in figure 3, microchannel plate 36 is made up of round sheet lead glass, thickness D is 300~500 μm, its workspace by
Largely the minitype channel with certain sharping degree is constituted, and two faces are coated with electrode, electrode two ends plus high-pressure V1, V1≥
1000V, and electronics output face is high potential.Low potential face is is electronically entered face, and microchannel plate face enters end and negative negative electrode affinity
Photocathode electronic output is pressed close to, and receives the electronics escaped from photocathode, and electronics enters behind microchannel to be made in accelerating field
Moved with lower to output face, occur multiple impacts with conduit wall, because averagely collision secondary electron produces quantity more than 1 every time,
It is overall that multiplication effect is presented, therefore the electron cloud that a large amount of electronics are constituted will be produced in output end, the times increasing efficiency of microchannel plate is about
For 103~104.Microchannel plate parameter that this programme is used is as shown in figure 5, microchannel plate integral thickness is D=400 μm, microchannel
Opening diameter is 10 μm, and microchannel angle of inclination is θ=8 °, workspace diameter L1=14.5mm, electrode district diameter L2=17mm,
Integral diameter L3=17.9mm.Ensureing that times increasing efficiency reaches 103While the above, additionally it is possible to realize that halfwidth is less than 200ps,
Electronic impulse of the delay less than 400ps is exported.
Laser Modulation negative electrode 3 is fixed on vacuum chamber shell 6 by cathode substructure 2, causes vacuum using depassing unit 5
Reached in chamber Laser Modulation Pulsed Xray source work needed for≤10-8Pa vacuum state.
As shown in Fig. 2 focusing electrode 4 is hollow cylindrical structure, internal diameter >=18mm is made of an electrically conducting material, such as Fig. 6 institutes
Show, keep the electrical potential difference V between focusing electrode and Laser Modulation negative electrode2For 100~900V, and focusing electrode is high potential end,
The effect of electric field formation lens in vacuum chamber make it that electron beam reaches the effect of focusing, is ultimately applied to anode metal target 7
On beam spot area≤2mm2。
As shown in Fig. 2 anode metal target 7 is transmission-type thin target, it is made up of argent Ag, thickness is 2~8 μm, exit facet
It is coated with the thick beryllium Be material Window layers of 0.1~0.8mm, electrical potential difference V between anode metal target and focusing electrode3Maintain 20kV~
Between 100kV, and anode metal target is high potential end.Anode high voltage forms the work of acceleration to the electron beam in vacuum chamber
With, and under the collective effect of focusing electrode formed high speed strong-focusing electron beam, beam bombardment is on Ag targets, by tough cause spoke
The exit end penetrated in target discharges x-ray photon.
As shown in fig. 7, Laser Modulation Pulsed Xray source can transmitted pulse width be ps magnitudes pulsed X-ray, X-ray arteries and veins
Width and position are rushed by laser pulse accuracy controlling, and 10 can be less than in input laser pulse repetition frequency10In the case of, it is real
Good reduction of the existing X-ray pulse signal to input laser signal.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, some improvement can also be made under the premise without departing from the principles of the invention, and these improvement also should be regarded as the present invention's
Protection domain.
Claims (7)
1. a kind of Laser Modulation Pulsed Xray source communicated for space X ray, it is characterised in that：Including optical fiber interface (1),
Cathode substructure (2), Laser Modulation negative electrode (3), focusing electrode (4), depassing unit (5), vacuum chamber shell (6) and anode gold
Belong to target (7), the optical fiber interface (1) is connected with the optical fiber for inputting laser signal, Laser Modulation negative electrode (3) and optical fiber interface
(1) it is adjacent, and be fixed on by cathode substructure (2) on vacuum chamber shell (6), focusing electrode (4) is located at vacuum chamber shell
(6) on madial wall, depassing unit (5) is located on the madial wall of vacuum chamber shell (6) and under focusing electrode (4)
Side, anode metal target (7) is fixed on vacuum chamber shell (6).
2. the Laser Modulation Pulsed Xray source communicated as claimed in claim 1 for space X ray, it is characterised in that：It is described
Laser Modulation negative electrode (3) is formed by stacking by negative negative electrode affinity photocathode with microchannel plate (36), and outside is enclosed with negative electrode
Shell (37), the negative negative electrode affinity photocathode is by substrate of glass (31), Si3N4Antireflection layer (32), Window layer (33),
GaAs GaAs emission layers (34), Cs:O active coatings (35) are brought into close contact the sandwich construction to be formed from top to bottom.
3. the Laser Modulation Pulsed Xray source communicated as claimed in claim 2 for space X ray, it is characterised in that：It is described
GaAs GaAs emission layers (34) are internal because doping way difference is divided into two regions：One area is big gradient index doped region
Domain, meets：Hole doping concentration in one area at any thickness x is N (x)=N0Exp (- β x), wherein factor beta=4 × ln10/
L, L are the thickness in the area of GaAs GaAs emission layers (34) one, are that at 0, i.e., the area of GaAs GaAs emission layers (34) one is left in thickness
Interface, hole doping concentration N (0) is 1019cm-3Magnitude, and be the i.e. area of GaAs GaAs emission layers (34) one at L in thickness
Right interface, hole doping concentration N (L) is 1015cm-3An intensity is produced in magnitude, an area isEven electricity field
, wherein k is Boltzmann constant, and temperature T=300K, q are electronic charge, and 2nd area are heavily doped region, and the doping of 2nd area is dense
Spend NA1018~1019cm-3Between, thickness is sub-micrometer scale.
4. the Laser Modulation Pulsed Xray source communicated as claimed in claim 3 for space X ray, it is characterised in that：It is described
Microchannel plate (36) is made up of round sheet lead glass, and thickness D is 300~500 μm, and two faces of microchannel plate (36) are coated with electricity
Pole, electrode two ends plus high-pressure V1, V1>=1000V, and electronics output face is high potential.
5. the Laser Modulation Pulsed Xray source communicated as claimed in claim 4 for space X ray, it is characterised in that：It is described
Microchannel plate (36) opening diameter is 5~20 μm, and microchannel angle of inclination is that θ is 8~10 °, workspace diameter L1>=14.5mm,
Electrode district diameter L2>=17mm, integral diameter L3≥17.9mm。
6. the Laser Modulation Pulsed Xray source communicated as claimed in claim 4 for space X ray, it is characterised in that：It is described
Focusing electrode (4) is hollow cylindrical structure, and internal diameter >=18mm is made of an electrically conducting material, and keeps focusing electrode cloudy with Laser Modulation
Electrical potential difference V between pole2For 100~900V, and focusing electrode is high potential end, the electronics acted on anode metal target (7)
Beam spot area≤2mm2。
7. the Laser Modulation Pulsed Xray source communicated as claimed in claim 6 for space X ray, it is characterised in that：It is described
Anode metal target (7) is transmission-type thin target, is made up of argent Ag, and thickness is 2~8 μm, and it is thick that exit facet is coated with 0.1~0.8mm
Beryllium Be material Window layers, anode metal target (7) electrical potential difference V between focusing electrode3Maintain between 20kV~100kV, and anode
Metallic target is high potential end.
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| CN107241142B (en) * | 2017-08-03 | 2019-06-07 | 西北核技术研究所 | Laser-X-ray communication system and method together |
| CN108470668A (en) * | 2018-03-09 | 2018-08-31 | 南京航空航天大学 | A kind of more target x-ray sources of magnetic field modulation for the communication of space X ray |
| CN108470668B (en) * | 2018-03-09 | 2019-12-10 | 南京航空航天大学 | Magnetic field modulation multi-target X-ray source for space X-ray communication |
| CN108631866A (en) * | 2018-04-19 | 2018-10-09 | 云南电网有限责任公司电力科学研究院 | A kind of means of communication and system |
| CN108922842A (en) * | 2018-06-13 | 2018-11-30 | 山东航天电子技术研究所 | Modulated X-ray generator and method based on microchannel plate |
| CN111106875A (en) * | 2019-12-17 | 2020-05-05 | 中国科学院国家空间科学中心 | Black barrier area X-ray communication system and method thereof |
| CN111106875B (en) * | 2019-12-17 | 2021-08-31 | 中国科学院国家空间科学中心 | Black barrier area X-ray communication system and method thereof |
| CN111128648A (en) * | 2019-12-23 | 2020-05-08 | 中国科学院西安光学精密机械研究所 | X-ray frequency modulation method, transmitting device and application thereof |
| CN112260767A (en) * | 2020-10-19 | 2021-01-22 | 中国核动力研究设计院 | Infrared-gamma ray combined wireless communication system and communication method |
| CN112260765A (en) * | 2020-10-19 | 2021-01-22 | 中国核动力研究设计院 | Gamma-ray communication system and communication method |
| CN112751620A (en) * | 2020-12-17 | 2021-05-04 | 南京航空航天大学 | Method, device and system for receiving X-ray signals of different energy load signals |
| CN112787720A (en) * | 2021-01-21 | 2021-05-11 | 南京航空航天大学 | Spatial X-ray communication method and device based on hybrid modulation |
| CN114501758A (en) * | 2022-01-11 | 2022-05-13 | 长春理工大学 | High flux X ray source |
| CN115209604A (en) * | 2022-08-15 | 2022-10-18 | 中国工程物理研究院流体物理研究所 | Plasma focus device with laser indirect auxiliary excitation |
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