ES2199576T3 - Metodo y dispositivo para corregir efectos de proximidad. - Google Patents

Metodo y dispositivo para corregir efectos de proximidad.

Info

Publication number
ES2199576T3
ES2199576T3 ES99926194T ES99926194T ES2199576T3 ES 2199576 T3 ES2199576 T3 ES 2199576T3 ES 99926194 T ES99926194 T ES 99926194T ES 99926194 T ES99926194 T ES 99926194T ES 2199576 T3 ES2199576 T3 ES 2199576T3
Authority
ES
Spain
Prior art keywords
design
precompensated
function
regularization
blurring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES99926194T
Other languages
English (en)
Spanish (es)
Inventor
Dirk Ernst Maria Van Dyck
Piotr Tomasz Univ. Cntr. Antwerpen JEDRASIK
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of ES2199576T3 publication Critical patent/ES2199576T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
ES99926194T 1998-06-16 1999-06-14 Metodo y dispositivo para corregir efectos de proximidad. Expired - Lifetime ES2199576T3 (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL1009422 1998-06-16
NL1009422 1998-06-16
NL1010311A NL1010311C2 (nl) 1998-06-16 1998-10-13 Werkwijze en inrichting voor het corrigeren van nabijheidseffecten.
NL1010311 1998-10-13

Publications (1)

Publication Number Publication Date
ES2199576T3 true ES2199576T3 (es) 2004-02-16

Family

ID=26642826

Family Applications (1)

Application Number Title Priority Date Filing Date
ES99926194T Expired - Lifetime ES2199576T3 (es) 1998-06-16 1999-06-14 Metodo y dispositivo para corregir efectos de proximidad.

Country Status (8)

Country Link
US (1) US6920368B1 (enExample)
EP (1) EP1088328B1 (enExample)
JP (1) JP2002518840A (enExample)
AU (1) AU4354199A (enExample)
DE (1) DE69907452T2 (enExample)
ES (1) ES2199576T3 (enExample)
NL (1) NL1010311C2 (enExample)
WO (1) WO1999066530A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148496B2 (en) * 2004-04-13 2006-12-12 Massachusetts Institute Of Technology System and method for proximity effect correction in imaging systems
EP1612834A1 (en) * 2004-06-29 2006-01-04 Leica Microsystems Lithography GmbH A process for controlling the proximity effect correction
US20080077907A1 (en) * 2006-09-21 2008-03-27 Kulkami Anand P Neural network-based system and methods for performing optical proximity correction
JP2008122929A (ja) * 2006-10-20 2008-05-29 Toshiba Corp シミュレーションモデルの作成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0443249B1 (en) * 1990-02-22 1997-03-05 AT&T Corp. Manufacturing adjustment during article fabrication
US5736281A (en) * 1996-06-07 1998-04-07 Lucent Technologies Inc. Dose modification proximity effect compensation (PEC) technique for electron beam lithography
US6035113A (en) * 1998-01-05 2000-03-07 International Business Machines Corporation Electron beam proximity correction method for hierarchical design data

Also Published As

Publication number Publication date
EP1088328B1 (en) 2003-05-02
DE69907452T2 (de) 2004-03-18
NL1010311C2 (nl) 1999-12-20
JP2002518840A (ja) 2002-06-25
US6920368B1 (en) 2005-07-19
WO1999066530A1 (en) 1999-12-23
EP1088328A1 (en) 2001-04-04
AU4354199A (en) 2000-01-05
DE69907452D1 (de) 2003-06-05

Similar Documents

Publication Publication Date Title
US6372391B1 (en) Template mask lithography utilizing structured beam
EP2359194B1 (en) Image reading and writing using a complex two-dimensional interlace scheme
US8900778B2 (en) Method for forming circular patterns on a surface
JP7713551B2 (ja) 局所パターン密度に対する荷電粒子ビーム露光を判定するための方法とシステム
JPS59921A (ja) 電子ビ−ムリソグラフイにおける近接効果の補正方法
JP5787473B2 (ja) 半導体装置を基板上に製造するための方法、荷電粒子ビームリソグラフィのための断片化またはマスクデータ準備のための方法、複数の円形パターンを表面上に形成するための方法およびシステム、ならびに荷電粒子ビームリソグラフィで用いるための断片化またはマスクデータ準備のためのシステム
JP5069052B2 (ja) ドーズ補正方法及び荷電粒子ビーム描画装置
JPS63304257A (ja) リソグラフイ方法
JP2018006748A (ja) 表面上に書込む形状をバイアスするための方法およびシステム
JP2021125689A (ja) マルチビーム描画機におけるブラー変化の補正
TWI240853B (en) Lithographic processing method, and device manufactured thereby
JP2025032198A (ja) 荷電粒子ビームの描画時間を短縮させる方法及びシステム
US6035113A (en) Electron beam proximity correction method for hierarchical design data
JP2016058714A (ja) データ生成装置、エネルギービーム描画装置、及びエネルギービーム描画方法
KR20030009001A (ko) 전자빔 리소그래피시 선폭변화를 보정하여 노광하는 방법및 이를 기록한 기록매체
JP7190267B2 (ja) 可変成形ビーム電子ビームリソグラフィにおける基本小パターンの較正
US8710468B2 (en) Method of and apparatus for evaluating an optimal irradiation amount of an electron beam for drawing a pattern onto a sample
JP6405087B2 (ja) 粒子ビーム描画プロセスおよび特に電子ビーム描画プロセスにおけるショット雑音の影響のシミュレーション
EP1088328B1 (en) Method and device for correcting proximity effects
JP4677571B2 (ja) 電子ビーム投影装置及びフォーカシング方法
JPWO2013073694A1 (ja) パターンを描画する方法及び装置
Choi et al. Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction
JP2017181640A (ja) レジスト評価方法
Bojko et al. Quantitative lithographic performance of proximity correction for electron beam lithography
US6461778B1 (en) In-line method of measuring effective three-leaf aberration coefficient of lithography projection systems