ES2192029T3 - Composicion abrasiva para la industria electronica. - Google Patents
Composicion abrasiva para la industria electronica.Info
- Publication number
- ES2192029T3 ES2192029T3 ES99811011T ES99811011T ES2192029T3 ES 2192029 T3 ES2192029 T3 ES 2192029T3 ES 99811011 T ES99811011 T ES 99811011T ES 99811011 T ES99811011 T ES 99811011T ES 2192029 T3 ES2192029 T3 ES 2192029T3
- Authority
- ES
- Spain
- Prior art keywords
- abrasive
- abrasive composition
- electronic industry
- composition
- integrated circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 238000005498 polishing Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011260 aqueous acid Substances 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 239000004744 fabric Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Una composición abrasiva para la industria de los circuitos integrados electrónicos que comprende una suspensión ácida acuosa de partículas de sílice coloidal individualizadas no unidas entre sí por lazos de siloxano y un tensioactivo abrasivo, siendo este abrasivo para el pulido químico mecánico en la industria de los circuitos integrados, que comprende un tejido impregnado por dicha composición y un proceso para el pulido mecánico químico.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9814073A FR2785614B1 (fr) | 1998-11-09 | 1998-11-09 | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2192029T3 true ES2192029T3 (es) | 2003-09-16 |
Family
ID=9532529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES99811011T Expired - Lifetime ES2192029T3 (es) | 1998-11-09 | 1999-11-04 | Composicion abrasiva para la industria electronica. |
Country Status (14)
Country | Link |
---|---|
US (2) | US7144814B2 (es) |
EP (1) | EP1000995B1 (es) |
JP (1) | JP4287002B2 (es) |
KR (1) | KR100562243B1 (es) |
CN (1) | CN1137232C (es) |
AT (1) | ATE232895T1 (es) |
DE (1) | DE69905441T2 (es) |
ES (1) | ES2192029T3 (es) |
FR (1) | FR2785614B1 (es) |
HK (1) | HK1028254A1 (es) |
ID (1) | ID23760A (es) |
MY (1) | MY121115A (es) |
SG (1) | SG82027A1 (es) |
TW (1) | TW502060B (es) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
FR2792643B1 (fr) * | 1999-04-22 | 2001-07-27 | Clariant France Sa | Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique |
JP4507141B2 (ja) * | 2000-05-22 | 2010-07-21 | 隆章 徳永 | 研磨用組成物、その製造方法およびそれを用いた研磨方法 |
JP2001347450A (ja) * | 2000-06-08 | 2001-12-18 | Promos Technologies Inc | 化学機械研磨装置 |
GB0118348D0 (en) * | 2001-07-27 | 2001-09-19 | Ghoshouni Amir A S | Surface treatment of aluminium-based materials |
US6743267B2 (en) | 2001-10-15 | 2004-06-01 | Dupont Air Products Nanomaterials Llc | Gel-free colloidal abrasive polishing compositions and associated methods |
US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
DE10152993A1 (de) * | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
DE10164262A1 (de) * | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
KR100444307B1 (ko) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
US6964600B2 (en) | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
US20050288397A1 (en) | 2004-06-29 | 2005-12-29 | Matthew Piazza | Viscous materials and method for producing |
US8163049B2 (en) | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
FR2910180A1 (fr) * | 2006-12-15 | 2008-06-20 | St Microelectronics | Procede de fabrication d'un transistor cmos a grilles metalliques duales. |
US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
CN102268224B (zh) * | 2010-06-01 | 2013-12-04 | 中国科学院上海微系统与信息技术研究所 | 可控氧化硅去除速率的化学机械抛光液 |
KR20140034231A (ko) | 2011-05-24 | 2014-03-19 | 가부시키가이샤 구라레 | 화학 기계 연마용 부식 방지제, 화학 기계 연마용 슬러리, 및 화학 기계 연마 방법 |
CN103943491B (zh) * | 2014-04-28 | 2016-08-24 | 华进半导体封装先导技术研发中心有限公司 | 在转接板工艺中采用cmp对基板表面进行平坦化的方法 |
CN105081996A (zh) * | 2014-05-21 | 2015-11-25 | 浙江师范大学 | 一种软弹性抛光磨具的制备工艺 |
US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
JP7141837B2 (ja) * | 2018-03-23 | 2022-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法、および半導体基板の製造方法 |
US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
US10759970B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2558827B1 (fr) | 1984-01-27 | 1986-06-27 | Azote & Prod Chim | Procede de fabrication de nitromethane et installation |
JPS61195183A (ja) * | 1985-02-22 | 1986-08-29 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 研磨粉固定型ポリウレタン研磨材料 |
JPH04291723A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー用研摩剤 |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
JP3192968B2 (ja) | 1995-06-08 | 2001-07-30 | 株式会社東芝 | 銅系金属用研磨液および半導体装置の製造方法 |
US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
US5769691A (en) * | 1996-06-14 | 1998-06-23 | Speedfam Corp | Methods and apparatus for the chemical mechanical planarization of electronic devices |
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
EP0853110B1 (en) * | 1997-01-10 | 2005-06-29 | Texas Instruments Incorporated | CMP slurry with high selectivity |
FR2761629B1 (fr) | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
FR2772777B1 (fr) | 1997-12-23 | 2000-03-10 | Clariant Chimie Sa | Compositions silico-acryliques, procede de preparation et application pour l'obtention de revetements durcissables thermiquement ou par rayonnement |
FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
-
1998
- 1998-11-09 FR FR9814073A patent/FR2785614B1/fr not_active Expired - Lifetime
-
1999
- 1999-10-27 US US09/427,675 patent/US7144814B2/en not_active Expired - Lifetime
- 1999-10-29 SG SG9905375A patent/SG82027A1/en unknown
- 1999-11-04 EP EP99811011A patent/EP1000995B1/en not_active Expired - Lifetime
- 1999-11-04 ES ES99811011T patent/ES2192029T3/es not_active Expired - Lifetime
- 1999-11-04 AT AT99811011T patent/ATE232895T1/de not_active IP Right Cessation
- 1999-11-04 DE DE69905441T patent/DE69905441T2/de not_active Expired - Lifetime
- 1999-11-05 MY MYPI99004834A patent/MY121115A/en unknown
- 1999-11-08 ID IDP991027D patent/ID23760A/id unknown
- 1999-11-08 JP JP31614599A patent/JP4287002B2/ja not_active Expired - Lifetime
- 1999-11-09 TW TW088119539A patent/TW502060B/zh not_active IP Right Cessation
- 1999-11-09 KR KR1019990049347A patent/KR100562243B1/ko active IP Right Grant
- 1999-11-09 CN CNB991234774A patent/CN1137232C/zh not_active Expired - Lifetime
-
2000
- 2000-11-13 HK HK00107232A patent/HK1028254A1/xx not_active IP Right Cessation
-
2006
- 2006-11-08 US US11/594,079 patent/US7252695B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1137232C (zh) | 2004-02-04 |
DE69905441T2 (de) | 2003-11-27 |
EP1000995B1 (en) | 2003-02-19 |
US20070051918A1 (en) | 2007-03-08 |
CN1253160A (zh) | 2000-05-17 |
ATE232895T1 (de) | 2003-03-15 |
DE69905441D1 (de) | 2003-03-27 |
FR2785614A1 (fr) | 2000-05-12 |
ID23760A (id) | 2000-05-11 |
HK1028254A1 (en) | 2001-02-09 |
TW502060B (en) | 2002-09-11 |
SG82027A1 (en) | 2001-07-24 |
EP1000995A1 (en) | 2000-05-17 |
JP4287002B2 (ja) | 2009-07-01 |
US7144814B2 (en) | 2006-12-05 |
US7252695B2 (en) | 2007-08-07 |
FR2785614B1 (fr) | 2001-01-26 |
KR100562243B1 (ko) | 2006-03-22 |
US20020142600A1 (en) | 2002-10-03 |
MY121115A (en) | 2005-12-30 |
JP2000144111A (ja) | 2000-05-26 |
KR20000035309A (ko) | 2000-06-26 |
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