ID23760A - Komposisi abrasif baru untuk industri elektronik sirkuit terintegrasi - Google Patents
Komposisi abrasif baru untuk industri elektronik sirkuit terintegrasiInfo
- Publication number
- ID23760A ID23760A IDP991027D ID991027D ID23760A ID 23760 A ID23760 A ID 23760A ID P991027 D IDP991027 D ID P991027D ID 991027 D ID991027 D ID 991027D ID 23760 A ID23760 A ID 23760A
- Authority
- ID
- Indonesia
- Prior art keywords
- composition
- abracy
- new
- integrated circuit
- electronic industry
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 238000005498 polishing Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011260 aqueous acid Substances 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 239000004744 fabric Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9814073A FR2785614B1 (fr) | 1998-11-09 | 1998-11-09 | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ID23760A true ID23760A (id) | 2000-05-11 |
Family
ID=9532529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IDP991027D ID23760A (id) | 1998-11-09 | 1999-11-08 | Komposisi abrasif baru untuk industri elektronik sirkuit terintegrasi |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US7144814B2 (es) |
| EP (1) | EP1000995B1 (es) |
| JP (1) | JP4287002B2 (es) |
| KR (1) | KR100562243B1 (es) |
| CN (1) | CN1137232C (es) |
| AT (1) | ATE232895T1 (es) |
| DE (1) | DE69905441T2 (es) |
| ES (1) | ES2192029T3 (es) |
| FR (1) | FR2785614B1 (es) |
| HK (1) | HK1028254A1 (es) |
| ID (1) | ID23760A (es) |
| MY (1) | MY121115A (es) |
| SG (1) | SG82027A1 (es) |
| TW (1) | TW502060B (es) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
| FR2792643B1 (fr) | 1999-04-22 | 2001-07-27 | Clariant France Sa | Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique |
| JP4507141B2 (ja) * | 2000-05-22 | 2010-07-21 | 隆章 徳永 | 研磨用組成物、その製造方法およびそれを用いた研磨方法 |
| JP2001347450A (ja) * | 2000-06-08 | 2001-12-18 | Promos Technologies Inc | 化学機械研磨装置 |
| GB0118348D0 (en) * | 2001-07-27 | 2001-09-19 | Ghoshouni Amir A S | Surface treatment of aluminium-based materials |
| US6743267B2 (en) | 2001-10-15 | 2004-06-01 | Dupont Air Products Nanomaterials Llc | Gel-free colloidal abrasive polishing compositions and associated methods |
| US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
| DE10152993A1 (de) * | 2001-10-26 | 2003-05-08 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen mit hoher Selektivität |
| DE10164262A1 (de) * | 2001-12-27 | 2003-07-17 | Bayer Ag | Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall/Dielektrikastrukturen |
| KR100444307B1 (ko) * | 2001-12-28 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
| US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
| US6964600B2 (en) | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
| US20050288397A1 (en) | 2004-06-29 | 2005-12-29 | Matthew Piazza | Viscous materials and method for producing |
| US8163049B2 (en) | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
| FR2910180A1 (fr) * | 2006-12-15 | 2008-06-20 | St Microelectronics | Procede de fabrication d'un transistor cmos a grilles metalliques duales. |
| US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| CN102268224B (zh) * | 2010-06-01 | 2013-12-04 | 中国科学院上海微系统与信息技术研究所 | 可控氧化硅去除速率的化学机械抛光液 |
| EP2717297B1 (en) | 2011-05-24 | 2016-07-27 | Kuraray Co., Ltd. | Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method |
| CN103943491B (zh) * | 2014-04-28 | 2016-08-24 | 华进半导体封装先导技术研发中心有限公司 | 在转接板工艺中采用cmp对基板表面进行平坦化的方法 |
| CN105081996A (zh) * | 2014-05-21 | 2015-11-25 | 浙江师范大学 | 一种软弹性抛光磨具的制备工艺 |
| US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
| JP7141837B2 (ja) * | 2018-03-23 | 2022-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法、および半導体基板の製造方法 |
| US10759970B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
| US10763119B2 (en) * | 2018-12-19 | 2020-09-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of using same |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2558827B1 (fr) | 1984-01-27 | 1986-06-27 | Azote & Prod Chim | Procede de fabrication de nitromethane et installation |
| JPS61195183A (ja) * | 1985-02-22 | 1986-08-29 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 研磨粉固定型ポリウレタン研磨材料 |
| JPH04291723A (ja) * | 1991-03-20 | 1992-10-15 | Asahi Denka Kogyo Kk | シリコンウェハー用研摩剤 |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
| JP3192968B2 (ja) | 1995-06-08 | 2001-07-30 | 株式会社東芝 | 銅系金属用研磨液および半導体装置の製造方法 |
| US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
| US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
| US5769691A (en) * | 1996-06-14 | 1998-06-23 | Speedfam Corp | Methods and apparatus for the chemical mechanical planarization of electronic devices |
| US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
| FR2754937B1 (fr) * | 1996-10-23 | 1999-01-15 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| DE69830676D1 (de) * | 1997-01-10 | 2005-08-04 | Texas Instruments Inc | CMP Suspension mit hoher Selektivität |
| FR2761629B1 (fr) | 1997-04-07 | 1999-06-18 | Hoechst France | Nouveau procede de polissage mecano-chimique de couches de materiaux semi-conducteurs a base de polysilicium ou d'oxyde de silicium dope |
| FR2772777B1 (fr) | 1997-12-23 | 2000-03-10 | Clariant Chimie Sa | Compositions silico-acryliques, procede de preparation et application pour l'obtention de revetements durcissables thermiquement ou par rayonnement |
| FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
-
1998
- 1998-11-09 FR FR9814073A patent/FR2785614B1/fr not_active Expired - Lifetime
-
1999
- 1999-10-27 US US09/427,675 patent/US7144814B2/en not_active Expired - Lifetime
- 1999-10-29 SG SG9905375A patent/SG82027A1/en unknown
- 1999-11-04 DE DE69905441T patent/DE69905441T2/de not_active Expired - Lifetime
- 1999-11-04 AT AT99811011T patent/ATE232895T1/de not_active IP Right Cessation
- 1999-11-04 EP EP99811011A patent/EP1000995B1/en not_active Expired - Lifetime
- 1999-11-04 ES ES99811011T patent/ES2192029T3/es not_active Expired - Lifetime
- 1999-11-05 MY MYPI99004834A patent/MY121115A/en unknown
- 1999-11-08 JP JP31614599A patent/JP4287002B2/ja not_active Expired - Lifetime
- 1999-11-08 ID IDP991027D patent/ID23760A/id unknown
- 1999-11-09 TW TW088119539A patent/TW502060B/zh not_active IP Right Cessation
- 1999-11-09 CN CNB991234774A patent/CN1137232C/zh not_active Expired - Lifetime
- 1999-11-09 KR KR1019990049347A patent/KR100562243B1/ko active IP Right Grant
-
2000
- 2000-11-13 HK HK00107232A patent/HK1028254A1/xx not_active IP Right Cessation
-
2006
- 2006-11-08 US US11/594,079 patent/US7252695B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ATE232895T1 (de) | 2003-03-15 |
| KR100562243B1 (ko) | 2006-03-22 |
| EP1000995B1 (en) | 2003-02-19 |
| CN1137232C (zh) | 2004-02-04 |
| SG82027A1 (en) | 2001-07-24 |
| JP2000144111A (ja) | 2000-05-26 |
| CN1253160A (zh) | 2000-05-17 |
| HK1028254A1 (en) | 2001-02-09 |
| JP4287002B2 (ja) | 2009-07-01 |
| EP1000995A1 (en) | 2000-05-17 |
| FR2785614A1 (fr) | 2000-05-12 |
| US20020142600A1 (en) | 2002-10-03 |
| KR20000035309A (ko) | 2000-06-26 |
| US20070051918A1 (en) | 2007-03-08 |
| US7144814B2 (en) | 2006-12-05 |
| FR2785614B1 (fr) | 2001-01-26 |
| MY121115A (en) | 2005-12-30 |
| ES2192029T3 (es) | 2003-09-16 |
| DE69905441D1 (de) | 2003-03-27 |
| US7252695B2 (en) | 2007-08-07 |
| TW502060B (en) | 2002-09-11 |
| DE69905441T2 (de) | 2003-11-27 |
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