ES2186800T3 - Procedimiento de secado de sustratos. - Google Patents

Procedimiento de secado de sustratos.

Info

Publication number
ES2186800T3
ES2186800T3 ES96929234T ES96929234T ES2186800T3 ES 2186800 T3 ES2186800 T3 ES 2186800T3 ES 96929234 T ES96929234 T ES 96929234T ES 96929234 T ES96929234 T ES 96929234T ES 2186800 T3 ES2186800 T3 ES 2186800T3
Authority
ES
Spain
Prior art keywords
sub
liquid
silicone
substrate drying
drying procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES96929234T
Other languages
English (en)
Inventor
Wilhelm Schellenberger
Dieter Herrmannsdorfer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ictop Entwicklungs GmbH
Original Assignee
Ictop Entwicklungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ictop Entwicklungs GmbH filed Critical Ictop Entwicklungs GmbH
Application granted granted Critical
Publication of ES2186800T3 publication Critical patent/ES2186800T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Abstract

LA INVENCION ESTA RELACIONADA CON UN PROCEDIMIENTO APLICABLE AL SECADO DE SUPERFICIES DE SUSTRATOS DE UN GRAN NUMERO DE MATERIALES, COMO SEMICONDUCTORES, METALES, PLASTICOS, Y, EN PARTICULAR, SILICONA. SE DOSIFICA LA SILICONA (1) EN UN BAÑO DE LIQUIDO (2) Y LA MISMA SE SEPARA DEL LIQUIDO (3); EL LIQUIDO DEL BAÑO (2) SE COMPONE DE UNA SOLUCION ACUOSA DE HF (3) CON UNA CONCENTRACION DEL 0,001 AL 50 %. AÑADIENDO UNA MEZCLA GASEOSA QUE CONTIENE O SUB,2}/O SUB,3} INMEDIATAMENTE DESPUES DE HABER FINALIZADO EL PROCESO DE SECADO, SE HIDROFILIZA LA SUPERFICIE DE SILICONA. AÑADIENDO UNA MEZCLA GASEOSA DE O SUB,2}/O SUB,3} DURANTE EL PROCESO DE SECADO, TIENE LUGAR LA LIMPIEZA CUANDO EL OZONO ENTRA EN LA SOLUCION A TRAVES DE LA SUPERFICIE DEL LIQUIDO.
ES96929234T 1995-08-23 1996-08-09 Procedimiento de secado de sustratos. Expired - Lifetime ES2186800T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19531031A DE19531031C2 (de) 1995-08-23 1995-08-23 Verfahren zum Trocknen von Silizium

Publications (1)

Publication Number Publication Date
ES2186800T3 true ES2186800T3 (es) 2003-05-16

Family

ID=7770207

Family Applications (2)

Application Number Title Priority Date Filing Date
ES01130669T Expired - Lifetime ES2250292T3 (es) 1995-08-23 1996-08-09 Procedimiento de secado de sustratos de silicona.
ES96929234T Expired - Lifetime ES2186800T3 (es) 1995-08-23 1996-08-09 Procedimiento de secado de sustratos.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES01130669T Expired - Lifetime ES2250292T3 (es) 1995-08-23 1996-08-09 Procedimiento de secado de sustratos de silicona.

Country Status (24)

Country Link
EP (2) EP0846334B1 (es)
JP (1) JP3857314B2 (es)
KR (1) KR19990037642A (es)
CN (1) CN1091542C (es)
AT (2) ATE227885T1 (es)
AU (1) AU697397B2 (es)
CA (1) CA2228168A1 (es)
CZ (1) CZ291335B6 (es)
DE (3) DE19531031C2 (es)
DK (2) DK1199740T3 (es)
ES (2) ES2250292T3 (es)
HK (2) HK1010280A1 (es)
HU (1) HUP9802482A3 (es)
IL (1) IL123042A (es)
MX (1) MX9801464A (es)
NO (1) NO980734D0 (es)
PL (1) PL183355B1 (es)
PT (1) PT846334E (es)
RU (1) RU2141700C1 (es)
SI (1) SI1199740T1 (es)
SK (1) SK284835B6 (es)
TW (1) TW427952B (es)
UA (1) UA51663C2 (es)
WO (1) WO1997008742A1 (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19800584C2 (de) * 1998-01-09 2002-06-20 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19613620C2 (de) 1996-04-04 1998-04-16 Steag Micro Tech Gmbh Verfahren und Vorrichtung zum Trocknen von Substraten
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
DE10036691A1 (de) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Verfahren zur chemischen Behandlung von Halbleiterscheiben
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10360269A1 (de) * 2003-12-17 2005-07-28 Friedrich-Schiller-Universität Jena Verfahren zur schnellen Mischung von kleinvolumigen Flüssigkeiten und Kit zu dessen Anwendung
US20060174421A1 (en) 2004-12-17 2006-08-10 Carter Daniel L Process for extracting liquid from a fabric
KR100897581B1 (ko) 2007-11-14 2009-05-14 주식회사 실트론 웨이퍼 건조 방법
RU2486287C2 (ru) * 2011-04-29 2013-06-27 Антон Викторович Мантузов Способ очистки поверхности полупроводниковых пластин и регенерации травильных растворов
CN114993028B (zh) * 2022-06-17 2023-05-30 高景太阳能股份有限公司 一种硅片烘干处理方法及系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2722783A1 (de) * 1977-05-20 1978-11-30 Wacker Chemitronic Verfahren zum reinigen von silicium
US4169807A (en) * 1978-03-20 1979-10-02 Rca Corporation Novel solvent drying agent
DE3317286A1 (de) * 1983-05-11 1984-11-22 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur reinigung von silicium durch saeureeinwirkung
FR2591324B1 (fr) * 1985-12-10 1989-02-17 Recif Sa Appareil pour le sechage unitaire des plaquettes de silicium par centrifugation
JPS62198127A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体ウエハの洗浄方法
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
US4902350A (en) * 1987-09-09 1990-02-20 Robert F. Orr Method for rinsing, cleaning and drying silicon wafers
NL8900480A (nl) * 1989-02-27 1990-09-17 Philips Nv Werkwijze en inrichting voor het drogen van substraten na behandeling in een vloeistof.
JPH0366126A (ja) * 1989-08-04 1991-03-20 Sharp Corp 絶縁膜の製造方法及びその製造装置
JPH0466175A (ja) * 1990-07-03 1992-03-02 Seiko Epson Corp 水切り乾燥方法
JPH04346431A (ja) * 1991-05-24 1992-12-02 Mitsubishi Electric Corp 半導体シリコンウェハの洗浄装置
EP0739252B2 (en) * 1993-09-22 2004-10-06 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid

Also Published As

Publication number Publication date
WO1997008742A1 (en) 1997-03-06
JPH11514496A (ja) 1999-12-07
DE19531031C2 (de) 1997-08-21
DE69635427D1 (de) 2005-12-15
UA51663C2 (uk) 2002-12-16
HK1043661B (zh) 2006-03-03
PL325121A1 (en) 1998-07-06
AU6872096A (en) 1997-03-19
EP1199740A3 (en) 2003-09-03
DK1199740T3 (da) 2006-03-27
CN1192824A (zh) 1998-09-09
DK0846334T3 (da) 2003-02-10
ATE309613T1 (de) 2005-11-15
AU697397B2 (en) 1998-10-08
SK284835B6 (sk) 2005-12-01
SI1199740T1 (sl) 2006-06-30
HUP9802482A3 (en) 2002-11-28
TW427952B (en) 2001-04-01
JP3857314B2 (ja) 2006-12-13
RU2141700C1 (ru) 1999-11-20
PL183355B1 (pl) 2002-06-28
SK21298A3 (en) 1998-10-07
EP0846334B1 (en) 2002-11-13
HUP9802482A2 (hu) 1999-02-01
EP1199740A2 (en) 2002-04-24
HK1043661A1 (en) 2002-09-20
DE19531031A1 (de) 1997-02-27
IL123042A0 (en) 1998-09-24
EP1199740B1 (en) 2005-11-09
CZ291335B6 (cs) 2003-02-12
DE69635427T2 (de) 2006-07-27
NO980734L (no) 1998-02-20
EP0846334A1 (en) 1998-06-10
IL123042A (en) 2001-04-30
ATE227885T1 (de) 2002-11-15
DE69624830D1 (de) 2002-12-19
HK1010280A1 (en) 1999-06-17
CN1091542C (zh) 2002-09-25
PT846334E (pt) 2003-02-28
CZ51798A3 (cs) 1998-07-15
ES2250292T3 (es) 2006-04-16
CA2228168A1 (en) 1997-03-06
KR19990037642A (ko) 1999-05-25
DE69624830T2 (de) 2003-03-27
MX9801464A (es) 1998-11-30
NO980734D0 (no) 1998-02-20

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