ES2166833T3 - Sistema de reactor epitaxial, susceptor y flujo de gas. - Google Patents

Sistema de reactor epitaxial, susceptor y flujo de gas.

Info

Publication number
ES2166833T3
ES2166833T3 ES95933371T ES95933371T ES2166833T3 ES 2166833 T3 ES2166833 T3 ES 2166833T3 ES 95933371 T ES95933371 T ES 95933371T ES 95933371 T ES95933371 T ES 95933371T ES 2166833 T3 ES2166833 T3 ES 2166833T3
Authority
ES
Spain
Prior art keywords
susceptor
inductor
primary
disk
possibly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES95933371T
Other languages
English (en)
Inventor
Vincenzo Ogliari
Franco Preti
Vittorio Pozzetti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LPE SpA
Original Assignee
LPE SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11369629&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES2166833(T3) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by LPE SpA filed Critical LPE SpA
Application granted granted Critical
Publication of ES2166833T3 publication Critical patent/ES2166833T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

UN REACTOR EPITAXIAL CON UN SUSCEPTOR PLANO EN FORMA DE DISCO CONSTA DE UN PLANO, SUBSTANCIALMENTE DE UNA CAMARA DE REACCION DE CUARZO TUBULAR (12) CONTENIENDO UN DISCO SUSCEPTOR GIRATORIO (14) TENIENDO UNA PLURALIDAD DE INTERVALOS (16A-H) PARA ALOJAMIENTO DE UNA CORRESPONDIENTE PLURALIDAD DE OBLEAS EN FORMA DE DISCO (18A-H) DE MATERIAL PARA SER PROCESADO, UN TANQUE (26) RELLENADO CON UN FLUJO DE LIQUIDO REFRIGERANTE (28) RODEANDO LA SUBSTANCIALMENTE CAMARA TUBULAR (12), UN INDUCTOR PRIMARIO DE ALIMENTACION (90) SUBSTANCIALMENTE EN FORMA DE ESPIRAL PLANA UBICADA FUERA DE LA CAMARA DE REACCION (12) EN LA PARTE INFERIOR DEL TANQUE (26) PARALELAMENTE AL DISCO SUSCEPTOR (14) Y TENIENDO MEDIOS (118) PARA MODIFICACION DE LA DISTANCIA ENTRE CADA ESPIRA INDIVIDUAL DEL INDUCTOR PRIMARIO (90) Y EL DISCO SUSCEPTOR, POSIBLEMENTE UN INDUCTOR SECUNDARIO (102) FORMADO POR ESPIRAS DISPUESTAS PARALELAMENTE Y ACOPLADAS MUY CERCA DE LAS ESPIRAS DEL INDUCTOR PRIMARIO (90), POSIBLEMENTE INTERMEDIOS (158) PARA LA CONEXION SELECTIVA DE CADA ESPIRA DEL INDUCTOR PRIMARIO (90) A CARGAS EXTERNAS DE ACUERDO CON UNA TECNICA CONOCIDA O PARA CERRAR SELECTIVAMENTE CADA ESPIRA DEL INDUCTOR SECUNDARIO, Y MEDIOS PARA PROPORCIONAR LA MAXIMA REFLEXION SOBRE TODAS LAS PAREDES DE LA CAMARA (COMPLETAMENTE DORADA) Y POSIBLEMENTE MEDIOS (169) PARA SUMINISTRAR TAMBIEN CONTINUAMENTE UNA REFLEXION VARIABLE SOBRE LA CARA DE LA CAMARA SITUADA POR ENCIMA DE LOS SUSTRATOS.
ES95933371T 1994-09-30 1995-09-14 Sistema de reactor epitaxial, susceptor y flujo de gas. Expired - Lifetime ES2166833T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI941997A IT1271233B (it) 1994-09-30 1994-09-30 Reattore epitassiale munito di suscettore discoidale piano ed avente flusso di gas parallelo ai substrati

Publications (1)

Publication Number Publication Date
ES2166833T3 true ES2166833T3 (es) 2002-05-01

Family

ID=11369629

Family Applications (1)

Application Number Title Priority Date Filing Date
ES95933371T Expired - Lifetime ES2166833T3 (es) 1994-09-30 1995-09-14 Sistema de reactor epitaxial, susceptor y flujo de gas.

Country Status (12)

Country Link
US (1) US6022412A (es)
EP (1) EP0730679B1 (es)
JP (1) JP3967375B2 (es)
KR (1) KR100380642B1 (es)
CN (1) CN1081683C (es)
AT (1) ATE210746T1 (es)
DE (1) DE69524563T2 (es)
DK (1) DK0730679T3 (es)
ES (1) ES2166833T3 (es)
IT (1) IT1271233B (es)
PT (1) PT730679E (es)
WO (1) WO1996010659A2 (es)

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DE19821007A1 (de) * 1998-05-11 1999-11-25 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
AU2003242099A1 (en) * 2002-06-10 2003-12-22 Tokyo Electron Limited Processing device and processing method
DE10320597A1 (de) * 2003-04-30 2004-12-02 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist
CN100529198C (zh) * 2004-06-09 2009-08-19 Etc外延技术中心有限公司 用于处理装置的支承系统
JP2006253696A (ja) * 2005-03-10 2006-09-21 Asm America Inc ガスインジェクタ制御システム
JP2007149774A (ja) * 2005-11-24 2007-06-14 Sharp Corp 気相成長装置
US8430965B2 (en) * 2007-02-16 2013-04-30 Pronomic Industry Ab Epitaxial growth system for fast heating and cooling
US8067061B2 (en) 2007-10-25 2011-11-29 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
US8628616B2 (en) * 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8404049B2 (en) 2007-12-27 2013-03-26 Memc Electronic Materials, Inc. Epitaxial barrel susceptor having improved thickness uniformity
KR20100139092A (ko) * 2008-03-26 2010-12-31 지티 솔라 인코퍼레이티드 금-코팅된 폴리실리콘 반응기 시스템 및 방법
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
JP5410086B2 (ja) * 2008-12-19 2014-02-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
US8486191B2 (en) * 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
IT1393695B1 (it) 2009-04-17 2012-05-08 Lpe Spa Camera di reazione di un reattore epitassiale e reattore che la utilizza
JP5444961B2 (ja) * 2009-09-01 2014-03-19 東京エレクトロン株式会社 成膜装置及び成膜方法
JP5514915B2 (ja) * 2009-10-09 2014-06-04 クリー インコーポレイテッド サセプタ装置
TWM392431U (en) * 2010-02-04 2010-11-11 Epistar Corp Systems for epitaxial growth
CN102330147B (zh) * 2010-07-14 2015-11-25 郭志凯 一种硅片生产外延设备及其系统
JP2012054508A (ja) * 2010-09-03 2012-03-15 Tokyo Electron Ltd 成膜装置
CN102277603A (zh) * 2011-08-03 2011-12-14 深圳大学 一种感应热/电沉积制备涂层或薄膜的装置及方法
CN102277563A (zh) * 2011-08-03 2011-12-14 深圳大学 一种旋转感应热沉积制备涂层或薄膜的装置及方法
CN102347258B (zh) * 2011-09-19 2013-01-09 东莞市中镓半导体科技有限公司 一种用于半导体外延系统的基座
KR101928356B1 (ko) * 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
CN102707249A (zh) * 2012-07-03 2012-10-03 汤丽萍 一种核磁共振成像仪器的射频线圈
WO2014018564A1 (en) 2012-07-23 2014-01-30 Zieger Claus Dieter Multiple proportion delivery systems and methods
US9842753B2 (en) 2013-04-26 2017-12-12 Applied Materials, Inc. Absorbing lamphead face
CN105143505B (zh) * 2013-04-26 2018-08-07 应用材料公司 吸收性灯头面
CN104250849B (zh) * 2013-06-25 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及外延生长设备
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
CN105350073B (zh) * 2015-10-30 2018-09-25 中国电子科技集团公司第四十八研究所 一种硅外延设备的石墨盘旋转密封装置及自动上下料系统
IT201600099783A1 (it) * 2016-10-05 2018-04-05 Lpe Spa Reattore per deposizione epitassiale con riflettore esterno alla camera di reazione e metodo di raffreddamento di un suscettore e di substrati
IT201600111143A1 (it) * 2016-11-04 2018-05-04 Lpe Spa Metodo di riscaldamento per un reattore per deposizione epitassiale e reattore per deposizione epitassiale
CN109136885B (zh) * 2017-06-19 2020-11-10 北京北方华创微电子装备有限公司 线圈调节机构、感应加热装置和气相沉积设备
TWI709203B (zh) * 2018-09-11 2020-11-01 大陸商北京北方華創微電子裝備有限公司 腔室冷卻裝置及半導體加工設備
IT202100014984A1 (it) * 2021-06-09 2022-12-09 Lpe Spa Camera di reazione con sistema di rivestimento e reattore epitassiale
CN115161766B (zh) * 2022-07-14 2024-04-26 中国电子科技集团公司第四十八研究所 硅外延设备的石墨基座旋转结构及石墨基座水平调节方法

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FR2566808B1 (fr) * 1984-06-27 1986-09-19 Mircea Andrei Procede et reacteur de croissance epitaxiale en phase vapeur
JPS61159574A (ja) * 1984-12-31 1986-07-19 Sony Corp 高周波誘導加熱気相反応装置
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US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy
EP0448346B1 (en) * 1990-03-19 1997-07-09 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
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Also Published As

Publication number Publication date
PT730679E (pt) 2002-05-31
EP0730679B1 (en) 2001-12-12
KR100380642B1 (ko) 2003-07-23
KR960706577A (ko) 1996-12-09
ITMI941997A0 (it) 1994-09-30
EP0730679A1 (en) 1996-09-11
WO1996010659A2 (en) 1996-04-11
DK0730679T3 (da) 2002-03-25
DE69524563D1 (de) 2002-01-24
JP3967375B2 (ja) 2007-08-29
IT1271233B (it) 1997-05-27
CN1139460A (zh) 1997-01-01
JPH09505798A (ja) 1997-06-10
ITMI941997A1 (it) 1996-03-30
WO1996010659A3 (en) 1996-05-23
US6022412A (en) 2000-02-08
ATE210746T1 (de) 2001-12-15
CN1081683C (zh) 2002-03-27
DE69524563T2 (de) 2002-05-29

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