ES2123639T3 - Circuito de derivacion para proteccion contra descargas electrostaticas. - Google Patents

Circuito de derivacion para proteccion contra descargas electrostaticas.

Info

Publication number
ES2123639T3
ES2123639T3 ES93904923T ES93904923T ES2123639T3 ES 2123639 T3 ES2123639 T3 ES 2123639T3 ES 93904923 T ES93904923 T ES 93904923T ES 93904923 T ES93904923 T ES 93904923T ES 2123639 T3 ES2123639 T3 ES 2123639T3
Authority
ES
Spain
Prior art keywords
vdd
vss
esd
transistor
rail
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93904923T
Other languages
English (en)
Inventor
Deepraj S Puar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cirrus Logic Inc
Original Assignee
Cirrus Logic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cirrus Logic Inc filed Critical Cirrus Logic Inc
Application granted granted Critical
Publication of ES2123639T3 publication Critical patent/ES2123639T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Thermistors And Varistors (AREA)
  • Protection Of Static Devices (AREA)
  • Burglar Alarm Systems (AREA)

Abstract

SE HA AÑADIDO UN CIRCUITO (400) COMPLEMENTARIO A UN CIRCUITO INTEGRADO (CI) DE SILICONA Y OXIDO METALICO PARA CONSEGUIR UNA TRAYECTORIA DE DERIVACION VDD A VSS DE SESGO NO REVERSIBLE PARA CORRIENTES TRANSITORIAS COMO DESCARGAS ELECTROSTATICAS. ESTE CIRCUITO PROTEGE EL CI DE DAÑO ESD PONIENDOSE EN ACTIVACION ANTES QUE CUALQUIER OTRO CAMINO, DIRIGIENDO ASI LA CORRIENTE DE SOBRETENSION TRANSITORIA ESD LEJOS DE ESTRUCTURAS DE FACIL DAÑO. ESPECIFICAMENTE, LA CORRIENTE TRANSITORIA ESD ES DIRIGIDA DESDE EL CARRIL VDD (102) HASTA EL CARRIL VSS (101) A TRAVES DE LA CONDUCCION DE UN TRANSISTOR (P3) DE CANAL P CUYO ORIGEN Y CONSUMO ESTAN CONECTADOS A VDD Y VSS RESPECTIVAMENTE. EL VOLTAJE EN LA ENTRADA DE ESTE TRANSISTOR SIGUE EL RAIL DE SUMINISTRO DE VDD PORQUE ES DIRIGIDA POR UNA RED DE DEMORA FORMADA POR UN SEGUNDO TRANSISTOR (P4) Y UN CAPACITADOR (C1). ESTA RED DE DEMORA DE RASTREO VDD ACTIVA EL TRANSISTOR VDD A VSS DURANTE UN INSTANTE Y LO DESACTIVA DURANTE LA OPERACION NORMAL DEL CI.
ES93904923T 1992-02-04 1993-02-04 Circuito de derivacion para proteccion contra descargas electrostaticas. Expired - Lifetime ES2123639T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/830,715 US5287241A (en) 1992-02-04 1992-02-04 Shunt circuit for electrostatic discharge protection

Publications (1)

Publication Number Publication Date
ES2123639T3 true ES2123639T3 (es) 1999-01-16

Family

ID=25257548

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93904923T Expired - Lifetime ES2123639T3 (es) 1992-02-04 1993-02-04 Circuito de derivacion para proteccion contra descargas electrostaticas.

Country Status (9)

Country Link
US (1) US5287241A (es)
EP (1) EP0625289B1 (es)
JP (1) JP3275095B2 (es)
AT (1) ATE173862T1 (es)
AU (1) AU3611593A (es)
DE (1) DE69322258T2 (es)
ES (1) ES2123639T3 (es)
SG (1) SG46570A1 (es)
WO (1) WO1993015541A1 (es)

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JP2972494B2 (ja) * 1993-06-30 1999-11-08 日本電気株式会社 半導体装置
US5616943A (en) * 1993-09-29 1997-04-01 At&T Global Information Solutions Company Electrostatic discharge protection system for mixed voltage application specific integrated circuit design
US5430595A (en) * 1993-10-15 1995-07-04 Intel Corporation Electrostatic discharge protection circuit
CA2115230A1 (en) * 1994-02-08 1995-08-09 Jonathan H. Orchard-Webb Esd protection circuit
JPH08139528A (ja) * 1994-09-14 1996-05-31 Oki Electric Ind Co Ltd トランジスタ保護回路
US5610791A (en) * 1994-09-26 1997-03-11 International Business Machines Corporation Power sequence independent electrostatic discharge protection circuits
US5610425A (en) * 1995-02-06 1997-03-11 Motorola, Inc. Input/output electrostatic discharge protection circuit for an integrated circuit
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5631793A (en) * 1995-09-05 1997-05-20 Winbond Electronics Corporation Capacitor-couple electrostatic discharge protection circuit
US5731941A (en) * 1995-09-08 1998-03-24 International Business Machines Corporation Electrostatic discharge suppression circuit employing trench capacitor
US5625280A (en) * 1995-10-30 1997-04-29 International Business Machines Corp. Voltage regulator bypass circuit
KR0170906B1 (ko) * 1995-11-01 1999-03-30 김주용 반도체 기억장치의 파워라인 커플링 방지 회로
US5729419A (en) * 1995-11-20 1998-03-17 Integrated Device Technology, Inc. Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same
GB2308731A (en) * 1995-12-22 1997-07-02 Motorola Gmbh Semiconductor device with electrostatic discharge protection
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
US5719737A (en) * 1996-03-21 1998-02-17 Intel Corporation Voltage-tolerant electrostatic discharge protection device for integrated circuit power supplies
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5740000A (en) * 1996-09-30 1998-04-14 Hewlett-Packard Co. ESD protection system for an integrated circuit with multiple power supply networks
TW322632B (en) * 1996-10-14 1997-12-11 Vanguard Int Semiconduct Corp Electrostatic discharge protection device for integrated circuit input/output port
US5838146A (en) * 1996-11-12 1998-11-17 Analog Devices, Inc. Method and apparatus for providing ESD/EOS protection for IC power supply pins
US6025746A (en) * 1996-12-23 2000-02-15 Stmicroelectronics, Inc. ESD protection circuits
GB2321773B (en) * 1997-01-30 2002-06-12 Motorola Ltd ESD protection device
US6304126B1 (en) * 1997-09-29 2001-10-16 Stmicroelectronics S.A. Protection circuit that can be associated with a filter
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US6271999B1 (en) 1998-11-20 2001-08-07 Taiwan Semiconductor Manufacturing Company ESD protection circuit for different power supplies
US6118640A (en) * 1999-02-17 2000-09-12 Pericom Semiconductor Corp. Actively-driven thin-oxide MOS transistor shunt for ESD protection of multiple independent supply busses in a mixed-signal chip
JP2000332207A (ja) * 1999-05-25 2000-11-30 Hitachi Ltd 過電圧保護回路
US6249410B1 (en) 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
US6288885B1 (en) * 1999-09-02 2001-09-11 Micron Technology, Inc. Method and apparatus for electrostatic discharge protection for printed circuit boards
US6445601B1 (en) * 1999-09-28 2002-09-03 Conexant Systems, Inc. Electrostatic discharge protection circuit
US6512662B1 (en) * 1999-11-30 2003-01-28 Illinois Institute Of Technology Single structure all-direction ESD protection for integrated circuits
US6624998B2 (en) 2000-01-24 2003-09-23 Medtronic, Inc. Electrostatic discharge protection scheme in low potential drop environments
US6522511B1 (en) 2000-06-15 2003-02-18 Sigmatel, Inc. High speed electrostatic discharge protection circuit
US6912109B1 (en) 2000-06-26 2005-06-28 Taiwan Semiconductor Manufacturing Co., Ltd. Power-rail ESD clamp circuits with well-triggered PMOS
JP2002305254A (ja) * 2001-04-05 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6462601B1 (en) * 2001-05-11 2002-10-08 Faraday Technology Corp. Electrostatic discharge protection circuit layout
TW495951B (en) * 2001-05-29 2002-07-21 Taiwan Semiconductor Mfg Electro-static discharge protection design for charged-device mode using deep well structure
US6801416B2 (en) 2001-08-23 2004-10-05 Institute Of Microelectronics ESD protection system for high frequency applications
US6552583B1 (en) 2001-10-11 2003-04-22 Pericom Semiconductor Corp. ESD-protection device with active R-C coupling to gate of large output transistor
US6738242B1 (en) 2002-03-07 2004-05-18 Pericom Semiconductor Corp. ESD-isolation circuit driving gate of bus-switch transistor during ESD pulse between two I/O pins
AU2002315976A1 (en) * 2002-03-22 2003-10-08 Freescale Semiconductor, Inc. Circuit for electrostatic discharge protection
US6704180B2 (en) 2002-04-25 2004-03-09 Medtronic, Inc. Low input capacitance electrostatic discharge protection circuit utilizing feedback
JP3526853B2 (ja) 2002-06-19 2004-05-17 沖電気工業株式会社 半導体装置の静電気破壊防止回路
US6724603B2 (en) * 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US7209332B2 (en) * 2002-12-10 2007-04-24 Freescale Semiconductor, Inc. Transient detection circuit
US6879476B2 (en) * 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
JP3773506B2 (ja) 2003-07-24 2006-05-10 松下電器産業株式会社 半導体集積回路装置
US20050045952A1 (en) * 2003-08-27 2005-03-03 International Business Machines Corporation Pfet-based esd protection strategy for improved external latch-up robustness
TWI224391B (en) * 2004-02-10 2004-11-21 Univ Nat Chiao Tung Electrostatic discharge protection circuit
JP2005235947A (ja) * 2004-02-18 2005-09-02 Fujitsu Ltd 静電気放電保護回路
US7221027B2 (en) * 2004-05-18 2007-05-22 Winbond Electronics Corporation Latchup prevention method for integrated circuits and device using the same
JP4996057B2 (ja) * 2004-05-26 2012-08-08 旭化成エレクトロニクス株式会社 半導体回路
US7277263B2 (en) * 2004-09-08 2007-10-02 Texas Instruments Incorporated Local ESD protection for low-capacitance applications
US7242561B2 (en) * 2005-01-12 2007-07-10 Silicon Integrated System Corp. ESD protection unit with ability to enhance trigger-on speed of low voltage triggered PNP
US7446990B2 (en) * 2005-02-11 2008-11-04 Freescale Semiconductor, Inc. I/O cell ESD system
US7301741B2 (en) * 2005-05-17 2007-11-27 Freescale Semiconductor, Inc. Integrated circuit with multiple independent gate field effect transistor (MIGFET) rail clamp circuit
US7663851B2 (en) * 2005-05-25 2010-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Tie-off circuit with ESD protection features
US7593202B2 (en) * 2005-11-01 2009-09-22 Freescale Semiconductor, Inc. Electrostatic discharge (ESD) protection circuit for multiple power domain integrated circuit
US7808117B2 (en) * 2006-05-16 2010-10-05 Freescale Semiconductor, Inc. Integrated circuit having pads and input/output (I/O) cells
US7589945B2 (en) * 2006-08-31 2009-09-15 Freescale Semiconductor, Inc. Distributed electrostatic discharge protection circuit with varying clamp size
US7777998B2 (en) 2007-09-10 2010-08-17 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
TWI357652B (en) * 2007-12-28 2012-02-01 Raydium Semiconductor Corp Esd protection device
US7817387B2 (en) 2008-01-09 2010-10-19 Freescale Semiconductor, Inc. MIGFET circuit with ESD protection
US8537512B2 (en) * 2009-02-26 2013-09-17 Freescale Semiconductor, Inc. ESD protection using isolated diodes
US8766675B1 (en) 2013-03-15 2014-07-01 International Business Machines Corporation Overvoltage protection circuit
US9219473B2 (en) 2013-03-15 2015-12-22 International Business Machines Corporation Overvoltage protection circuit
US20140334046A1 (en) * 2013-05-13 2014-11-13 Kabushiki Kaisha Toshiba Semiconductor circuit
US9177924B2 (en) 2013-12-18 2015-11-03 Taiwan Semiconductor Manufacturing Company Limited Vertical nanowire transistor for input/output structure
US11038346B1 (en) * 2019-12-31 2021-06-15 Nxp B.V. ESD protection

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JPS55165682A (en) * 1979-06-11 1980-12-24 Mitsubishi Electric Corp Mos field effect semiconductor device
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
JPS592358A (ja) * 1982-06-28 1984-01-07 Mitsubishi Electric Corp 半導体回路の保護回路
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EP0435047A3 (en) * 1989-12-19 1992-07-15 National Semiconductor Corporation Electrostatic discharge protection for integrated circuits

Also Published As

Publication number Publication date
EP0625289B1 (en) 1998-11-25
WO1993015541A1 (en) 1993-08-05
EP0625289A4 (en) 1995-01-18
AU3611593A (en) 1993-09-01
SG46570A1 (en) 1998-02-20
EP0625289A1 (en) 1994-11-23
JP3275095B2 (ja) 2002-04-15
US5287241A (en) 1994-02-15
JPH07503599A (ja) 1995-04-13
ATE173862T1 (de) 1998-12-15
DE69322258T2 (de) 1999-04-22
DE69322258D1 (de) 1999-01-07

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