ES2076631T3 - Emisor de electrones por efecto de campo, moldeado y revestido de diamante, y metodo para producirlo. - Google Patents

Emisor de electrones por efecto de campo, moldeado y revestido de diamante, y metodo para producirlo.

Info

Publication number
ES2076631T3
ES2076631T3 ES92113614T ES92113614T ES2076631T3 ES 2076631 T3 ES2076631 T3 ES 2076631T3 ES 92113614 T ES92113614 T ES 92113614T ES 92113614 T ES92113614 T ES 92113614T ES 2076631 T3 ES2076631 T3 ES 2076631T3
Authority
ES
Spain
Prior art keywords
diamond
coated
producing
field effect
effect emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92113614T
Other languages
English (en)
Inventor
Robert C Kane
James E Jaskie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of ES2076631T3 publication Critical patent/ES2076631T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes
    • H01J1/3042Field-emissive cathodes microengineered, e.g. Spindt-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00Methods or apparatus for measurement or analysis of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30457Diamond

Abstract

SE CONSTRUYE UN EMISOR DE ELECTRONES CON EMISION DE CAMPO EN EL QUE SE UTILIZA UN REVESTIMIENTO DE MATERIAL ADIAMANTADO (406) DISPUESTO EN UNA SUPERFICIE DE UNA CAPA DE MATERIAL CONDUCTOR/SEMICONDUCTOR (407) MEDIANTE UN METODO QUE INCLUYE LOS PASOS DE IMPLANTACION DE IONES DE CARBONO (404) EN UNA SUPERFICIE DE UN SUBSTRATO SELECTIVAMENTE MOLDEADO (401) PARA QUE FUNCIONE COMO PUNTOS DE NUCLEACION PARA LA FORMACION DEL MATERIAL ADIAMANTADO. SE DEPOSITA UNA CAPA CONDUCTORA (407) EN EL MATERIAL ADIAMANTADO (406) Y SE EXTRAE EL SUBSTRATO (401) PARA DEJAR UN EMISOR DE ELECTRONES CON UN REVESTIMIENTO ADIAMANTADO.
ES92113614T 1991-08-20 1992-08-10 Emisor de electrones por efecto de campo, moldeado y revestido de diamante, y metodo para producirlo. Expired - Lifetime ES2076631T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/747,562 US5129850A (en) 1991-08-20 1991-08-20 Method of making a molded field emission electron emitter employing a diamond coating

Publications (1)

Publication Number Publication Date
ES2076631T3 true ES2076631T3 (es) 1995-11-01

Family

ID=25005642

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92113614T Expired - Lifetime ES2076631T3 (es) 1991-08-20 1992-08-10 Emisor de electrones por efecto de campo, moldeado y revestido de diamante, y metodo para producirlo.

Country Status (9)

Country Link
US (1) US5129850A (es)
EP (1) EP0528322B1 (es)
JP (1) JP2742749B2 (es)
CN (1) CN1042470C (es)
AT (1) ATE128267T1 (es)
CA (1) CA2071064A1 (es)
DE (1) DE69204940T2 (es)
DK (1) DK0528322T3 (es)
ES (1) ES2076631T3 (es)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
JP3255960B2 (ja) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 冷陰極エミッタ素子
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5399238A (en) * 1991-11-07 1995-03-21 Microelectronics And Computer Technology Corporation Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5252833A (en) * 1992-02-05 1993-10-12 Motorola, Inc. Electron source for depletion mode electron emission apparatus
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5679043A (en) 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US5543684A (en) * 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5278475A (en) * 1992-06-01 1994-01-11 Motorola, Inc. Cathodoluminescent display apparatus and method for realization using diamond crystallites
EP0681311B1 (en) * 1993-01-19 2002-03-13 KARPOV, Leonid Danilovich Field-effect emitter device
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
JPH08507643A (ja) * 1993-03-11 1996-08-13 フェド.コーポレイション エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5410166A (en) * 1993-04-28 1995-04-25 The United States Of America As Represented By The Secretary Of The Air Force P-N junction negative electron affinity cathode
US5387844A (en) * 1993-06-15 1995-02-07 Micron Display Technology, Inc. Flat panel display drive circuit with switched drive current
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
CN1134754A (zh) 1993-11-04 1996-10-30 微电子及计算机技术公司 制作平板显示系统和元件的方法
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
EP0675519A1 (en) * 1994-03-30 1995-10-04 AT&T Corp. Apparatus comprising field emitters
US5552659A (en) * 1994-06-29 1996-09-03 Silicon Video Corporation Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
RU2074444C1 (ru) * 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Матричный автоэлектронный катод и электронный прибор для оптического отображения информации
US6204834B1 (en) 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
EP0700065B1 (en) * 1994-08-31 2001-09-19 AT&T Corp. Field emission device and method for making same
US5504385A (en) * 1994-08-31 1996-04-02 At&T Corp. Spaced-gate emission device and method for making same
US5531880A (en) * 1994-09-13 1996-07-02 Microelectronics And Computer Technology Corporation Method for producing thin, uniform powder phosphor for display screens
US5492234A (en) * 1994-10-13 1996-02-20 Micron Technology, Inc. Method for fabricating spacer support structures useful in flat panel displays
US5484314A (en) * 1994-10-13 1996-01-16 Micron Semiconductor, Inc. Micro-pillar fabrication utilizing a stereolithographic printing process
US5637950A (en) * 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5623180A (en) * 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
FR2726689B1 (fr) * 1994-11-08 1996-11-29 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
US5592053A (en) * 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US5616368A (en) * 1995-01-31 1997-04-01 Lucent Technologies Inc. Field emission devices employing activated diamond particle emitters and methods for making same
US5598056A (en) * 1995-01-31 1997-01-28 Lucent Technologies Inc. Multilayer pillar structure for improved field emission devices
US5561340A (en) * 1995-01-31 1996-10-01 Lucent Technologies Inc. Field emission display having corrugated support pillars and method for manufacturing
GB9502435D0 (en) * 1995-02-08 1995-03-29 Smiths Industries Plc Displays
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
US5679895A (en) * 1995-05-01 1997-10-21 Kobe Steel Usa, Inc. Diamond field emission acceleration sensor
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
KR100405886B1 (ko) * 1995-08-04 2004-04-03 프린터블 필드 에미터스 리미티드 전계전자방출물질과그제조방법및그물질을이용한소자
US5663742A (en) * 1995-08-21 1997-09-02 Micron Display Technology, Inc. Compressed field emission display
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5610667A (en) * 1995-08-24 1997-03-11 Micron Display Technology, Inc. Apparatus and method for maintaining synchronism between a picture signal and a matrix scanned array
US5635988A (en) * 1995-08-24 1997-06-03 Micron Display Technology, Inc. Apparatus and method for maintaining synchronism between a picture signal and a matrix scanned array
US5773927A (en) * 1995-08-30 1998-06-30 Micron Display Technology, Inc. Field emission display device with focusing electrodes at the anode and method for constructing same
US5648699A (en) * 1995-11-09 1997-07-15 Lucent Technologies Inc. Field emission devices employing improved emitters on metal foil and methods for making such devices
WO1997018577A1 (en) * 1995-11-15 1997-05-22 E.I. Du Pont De Nemours And Company Process for making a field emitter cathode using a particulate field emitter material
US6117294A (en) * 1996-01-19 2000-09-12 Micron Technology, Inc. Black matrix material and methods related thereto
JP2871579B2 (ja) * 1996-03-28 1999-03-17 日本電気株式会社 発光装置およびこれに用いる冷陰極
US5668437A (en) 1996-05-14 1997-09-16 Micro Display Technology, Inc. Praseodymium-manganese oxide layer for use in field emission displays
ATE279782T1 (de) * 1996-06-25 2004-10-15 Univ Vanderbilt Strukturen, anordnungen und vorrichtungen mit vakuum-feldemissions-mikrospitzen und verfahren zu deren herstellung
RU2158037C2 (ru) * 1996-07-16 2000-10-20 ООО "Высокие технологии" Способ получения алмазных пленок методом газофазного синтеза
US6231412B1 (en) * 1996-09-18 2001-05-15 Canon Kabushiki Kaisha Method of manufacturing and adjusting electron source array
US5854615A (en) * 1996-10-03 1998-12-29 Micron Display Technology, Inc. Matrix addressable display with delay locked loop controller
US5973452A (en) * 1996-11-01 1999-10-26 Si Diamond Technology, Inc. Display
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US6356014B2 (en) 1997-03-27 2002-03-12 Candescent Technologies Corporation Electron emitters coated with carbon containing layer
US6064148A (en) * 1997-05-21 2000-05-16 Si Diamond Technology, Inc. Field emission device
US6091190A (en) * 1997-07-28 2000-07-18 Motorola, Inc. Field emission device
US6326725B1 (en) 1998-05-26 2001-12-04 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6283812B1 (en) 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US6250984B1 (en) 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
US6235545B1 (en) 1999-02-16 2001-05-22 Micron Technology, Inc. Methods of treating regions of substantially upright silicon-comprising structures, method of treating silicon-comprising emitter structures, methods of forming field emission display devices, and cathode assemblies
US6741019B1 (en) 1999-10-18 2004-05-25 Agere Systems, Inc. Article comprising aligned nanowires
JP3851167B2 (ja) * 2000-02-16 2006-11-29 フラーレン インターナショナル コーポレイション 効率的な電子電界放出のためのダイヤモンド/カーボンナノチューブ構造体
US7227924B2 (en) * 2000-10-06 2007-06-05 The University Of North Carolina At Chapel Hill Computed tomography scanning system and method using a field emission x-ray source
US6553096B1 (en) 2000-10-06 2003-04-22 The University Of North Carolina Chapel Hill X-ray generating mechanism using electron field emission cathode
US6876724B2 (en) * 2000-10-06 2005-04-05 The University Of North Carolina - Chapel Hill Large-area individually addressable multi-beam x-ray system and method of forming same
US7085351B2 (en) * 2000-10-06 2006-08-01 University Of North Carolina At Chapel Hill Method and apparatus for controlling electron beam current
US7082182B2 (en) * 2000-10-06 2006-07-25 The University Of North Carolina At Chapel Hill Computed tomography system for imaging of human and small animal
US6554673B2 (en) 2001-07-31 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method of making electron emitters
US6891324B2 (en) * 2002-06-26 2005-05-10 Nanodynamics, Inc. Carbon-metal nano-composite materials for field emission cathodes and devices
CN100390921C (zh) * 2003-06-20 2008-05-28 中国科学院物理研究所 一种金刚石膜平面场发射阴极及其制作方法
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements
KR100678727B1 (ko) * 2005-04-13 2007-02-05 한국과학기술연구원 다공성 모재를 이용한 다이아몬드 쉘 및 그 제조방법
US8155262B2 (en) * 2005-04-25 2012-04-10 The University Of North Carolina At Chapel Hill Methods, systems, and computer program products for multiplexing computed tomography
US8189893B2 (en) * 2006-05-19 2012-05-29 The University Of North Carolina At Chapel Hill Methods, systems, and computer program products for binary multiplexing x-ray radiography
CN103948395A (zh) * 2007-07-19 2014-07-30 北卡罗来纳大学查珀尔希尔分校 固定 x 射线数字化断层合成或断层摄影系统和相关方法
US8600003B2 (en) 2009-01-16 2013-12-03 The University Of North Carolina At Chapel Hill Compact microbeam radiation therapy systems and methods for cancer treatment and research
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8358739B2 (en) 2010-09-03 2013-01-22 The University Of North Carolina At Chapel Hill Systems and methods for temporal multiplexing X-ray imaging
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
US9782136B2 (en) 2014-06-17 2017-10-10 The University Of North Carolina At Chapel Hill Intraoral tomosynthesis systems, methods, and computer readable media for dental imaging
US10980494B2 (en) 2014-10-20 2021-04-20 The University Of North Carolina At Chapel Hill Systems and related methods for stationary digital chest tomosynthesis (s-DCT) imaging
US10835199B2 (en) 2016-02-01 2020-11-17 The University Of North Carolina At Chapel Hill Optical geometry calibration devices, systems, and related methods for three dimensional x-ray imaging
CN111996581B (zh) * 2020-07-08 2021-10-26 西安电子科技大学 一种单晶金刚石与衬底无损耗快速分离方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599668A (en) * 1977-06-02 1981-10-07 Nat Res Dev Semiconductors
JPS5436828B2 (es) * 1974-08-16 1979-11-12
US4164680A (en) * 1975-08-27 1979-08-14 Villalobos Humberto F Polycrystalline diamond emitter
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
GB8519905D0 (en) * 1985-08-08 1985-09-18 Smit & Sons Diamond Tools Rotary grinding wheel dressers
JPS62140332A (ja) * 1985-12-16 1987-06-23 Hitachi Ltd 電界放射陰極
EP0713241B1 (en) * 1987-02-06 2001-09-19 Canon Kabushiki Kaisha A display device comprising an electron emission element
EP0307109A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
WO1989011897A1 (en) * 1988-06-03 1989-12-14 Massachusetts Institute Of Technology Silicon dioxide films on diamond
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating

Also Published As

Publication number Publication date
DK0528322T3 (da) 1995-11-06
DE69204940D1 (de) 1995-10-26
ATE128267T1 (de) 1995-10-15
CN1042470C (zh) 1999-03-10
EP0528322B1 (en) 1995-09-20
EP0528322A1 (en) 1993-02-24
JP2742749B2 (ja) 1998-04-22
DE69204940T2 (de) 1996-05-15
CA2071064A1 (en) 1993-02-21
JPH05205616A (ja) 1993-08-13
US5129850A (en) 1992-07-14
CN1069827A (zh) 1993-03-10

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