CN1069827A - 采用金刚石涂层的模制场致发射电子发射极及其制造方法 - Google Patents

采用金刚石涂层的模制场致发射电子发射极及其制造方法 Download PDF

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CN1069827A
CN1069827A CN 92105475 CN92105475A CN1069827A CN 1069827 A CN1069827 A CN 1069827A CN 92105475 CN92105475 CN 92105475 CN 92105475 A CN92105475 A CN 92105475A CN 1069827 A CN1069827 A CN 1069827A
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electron emitter
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罗伯特·C·凯恩
詹姆斯·E·贾斯基
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Motorola Solutions Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

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Abstract

置于导电/半导电材料层(407)表面的利用金 刚石材料涂层(406)的场致发射电子发射极由包括 以下步骤的方法构成：在经选择成型的衬底(401)的 表面注入碳离子(404)，对形成金刚石晶体来说起集 结区的作用。在金刚石(406)上淀积导电层(407)， 并去除衬底(401)，留下具有金刚石涂层的电子发射 极。

Description

本发明一般涉及场致发射电子发射极，特别是场致发射电子发射极以及利用低的/负的电子亲和力涂层制造场致发射电子发射极的方法。
最好利用加工成形的导电/半导电电极作为电子发射极的场致发射器件在本领域中已为人所知。先有技术的电子发射极呈现出一些不希望有的特性，比如工作电压高，表面不稳定，以及对离子冲击破坏的敏感性。
因此需要有利用电子发射极/电子源的电子器件出现，它至少能克服先有技术的电子发射极的某些缺点。
这种需要以及其它需要基本上是通过采用一种形成电子发射极的方法来实现的，该方法包括以下步骤：提供一个经选择成形的、具有主表面的衬底;至少在经选择成形的衬底的主表面的一部分，注入离子，作为集结区;最好至少在一些集结区生成金刚石晶体;至少在衬底的主表面的一部分和金刚石晶体上淀积一层导电/半导电材料;以及去除至少一些经选择成形的衬底，由此形成具有置于至少一部分导电/半导电层上的金则石涂层的电子发射极。
这种需要以及其它需要还通过一种场致发射电子发射极来实现，在本发明的一个实施例中，它包括：从碳集结区生长的金刚石涂层，该集结区置于至少一部分经选择成形的衬底上;在本发明的另一个实施例中，包括具有从碳集结区生长的金刚石涂层场致发射电子发射极，该集结区有选择地置于一部分经选择成形的衬底上。
图1为表示离子注入装置的示意图。
图2是离子注入的剖面图。
图3为表示金刚石生长的环境装置的示意图。
图4A～4D是根据本发明所述方法的各个步骤获得的结构的侧视图。
图5A～5E是根据本发明所述另一种方法的各个步骤获得的结构的侧视图。
图6A～6E是根据本发明所述的再一种方法的各个步骤获得的结构的侧视图。
现在参照图1，该图表示离子注入装置的一个实施例。它有一个真空腔101，其中至少装有一个离子源106和一个衬底（靶）支撑件103。如图所示，有一个离子材料源输送嘴105，向离子源106提供材料。有一个抽空口102，一台抽空装置（未示出）与该抽空口相连，将腔101抽空。在该注入装置的工作过程中，由于电压源108引起的电场的作用，离子速107打在靶上，在本例中它是一个半导体衬底104，于是至少有一些构成离子束107的离子注入衬底104。
图2是放大了的侧视图，表示已经注入离子201的衬底104。取决于相关的加速电场（未示出）的强度，离子有选择地以一个所要求的深度注入衬底104。相应地选择电场强度，使注入的离子基本置于衬底104的表面。
图3表示金刚石生长环境装置的一个实施例。有一个真空腔301，其中配置衬底（靶）支撑件305和加热元件304。作为送气管一部分的气源管303向金刚石生长环境提供反应气源。腔301通过与抽空口302相连的真空泵（未示出）被适当抽空。在工作期间，靶（在本例中是衬底306）置于靶支撑件305上，靠近支撑件305还有一个加热元件304。电源307向加热元件304提供电流，对衬底306加热，在适当的气体组分存在的情况下，衬底306表面发生反应，在此其间生长金刚石。
金刚石的生长至少部分地取决于材料表面的集结能力。在形成金刚石的许多方法中，集结是不规则的，分布是不均匀的，这造成了不希望的和不完全的膜生长。注入衬底306表面的碳离子提供了基本上均匀分布的多个集结区，在这些集结区内开始生长金刚石。
参照图4A，这里画出了根据本发明所述方法的各个步骤获得的结构400的放大侧视图。结构400包括具有主表面的经选择成形的支撑层，以后称之为衬底401，其中衬底401通过任何已知的技术经选择成形，这些技术（但又不限于这些技术）包括非均质蚀刻和离子碾磨，于是提供一个经选择成形的区域，在本实施例中大体上是一个V形凹口402。用箭头405表示的碳离子束在衬底401上的碳集结区404注入碳离子。
图4B是经过本发明所述方法的其它步骤处理后获得的结构400的侧视图，其中用箭头420表示的反应材料源置于衬底401和靠近的加热元件（图3中304）之间的区域，这使得能在注入的碳集结区生长金刚石晶体涂层406。
图4C是经过另一步骤后获得的结构400的侧视图，其中导电/半导电材料层407淀积在衬底401主表面的任何暴露部分和金刚石晶体层406上。淀积导电/半导电材料407后，便用突出部分408填充了凹口402。
图4D是经过本发明所述方法的另一步骤处理后获得的结构400的侧视图，其中至少有一些衬底401已经被去除了。去除衬底401的材料实际上露出了导电/半导电材料层407，特别是露出了上面有金刚石晶体涂层406的突出部分408。必须懂得，衬底401的材料和导电/半导电材料407应这样选择，以使通过某些方法，如刻蚀、溶解等，使衬底401能相对容易地去除掉，而基本上不影响晶体层406或导电/半导电材料407。
所得到的包括金刚石涂层的结构形成了场致发射电子发射极，它呈现出许多所希望的工作特性，如降低了工作电压，改进了表面的稳定性，以及减小了对离子冲击破坏的敏感性。注入碳集结区改进了金刚石晶体的覆盖情况，并且阻止了可能含有所不希望的大量晶体生长的非均匀涂层的形成。
图5A是根据本发明所述另一种方法的步骤获得的结构500的放大的侧视图。有一层具有主表面的支撑层或者衬底501。衬底501的上面是一层可按图形加工的材料509，如光阻材料或绝缘材料。随后，可按图形加工的材料层509有选择地暴露和显现至少一个孔503，由此经选择的衬底501的非均质形状就完成了，这样便提供了经选择成形的区域，在本实施例中是一个V形凹口502。用箭头505表示的碳离子束在衬底501的凹口502的集结区504注入碳离子。
图5B是结构500的侧视图，表示在集结区504注入离子之后去除可按图形加工的材料层509的情况。
图5C是经过本发明所述方法的其它步骤处理后获得的结构500的侧视图，其中用箭头520表示的反应材料源置于衬底501和选择的加热元件（见图3）之间的区域，这使得能在注入的碳集结区生长金刚石晶体506。
图5D是经过另一步骤后获得的结构500的侧视图，其中导电/半导电材料层507淀积在衬底201主表面的任何暴露部分和金刚石晶体506上。淀积导电/半导电材料507后，便用突出部分508填充了凹口502。
图5E是经过本发明所述方法的另一步骤处理后获得的结构500的侧视图，其中至少有一些衬底501已经被去除了。去除衬底501的材料实际上露出了导电/半导电材料层507，特别是露出了上面有金刚石晶体506的突出部分508。
利用注入的集结区，并从中生长金刚石晶体，这样做能够形成更均匀的涂层。由于所希望的涂层厚度在10A至不足5000A之间，所以形成涂层的一个重要特征是应尽量减小涂层厚度和覆盖面的不规则性。实现金刚石膜生长的其它方法不能提供基本上均匀的生长厚度和覆盖面。
图6A是根据本发明所述的再一种方法的步骤获得的结构600的侧视图。结构600与先前参照图5B所描述的结构500类似，其中与图5B类似的部分现以数字“6”打头标示。图6A还画出了一个角度很小的材料蒸发部分，被用作在衬底601上淀积材料610，因此经选择成形的衬底601的区域602被部分地封闭了。图6A还画出了用箭头605表示的离子束，由此将碳集结区604注入经选择成形的衬底601的区域602，并基本上是在经选择成形的区域602的最佳部位，在本实施例中是V形凹口的顶部。
图6B是经过另一步骤处理后的结构600，其中已经去除了材料610。
图6C是经过本发明所述方法的其它步骤处理后获得的结构600的侧视图，其中用箭头620表示的反应材料源置于衬底601和靠近的加热元件（见图3）之间的区域，这使得能在注入的碳集结区生长金刚石晶体606。在图6C所示结构的实例中，最好仅在衬底601的部分暴露表面上，特别是在经选择成形的区域602的最顶部，生长晶体。
图6D是经过另一步骤后获得的结构600的侧视图，其中导电/半导电材料层607淀积在衬底601主表面的任何暴露部分和金刚石晶体606上。淀积导电/半导电材料607后，使用突出部分608填充了经选择成形的区域602。
图6E是经过本发明所述方法的另一步骤处理后获得的结构600的侧视图，其中至少有一些衬底601已经被去除了。去除衬底601的材料实际上露出了导电/半导电材料层607，特别是露出了突出部分608，在该突出部分的顶部有金铡石晶体606。
以上描述的用于形成场致发射器件中的电子发射极结构的方法制造的电子发射极结构，呈现出通过先有技术所不能得到的工作特性。采用本发明的方法形成的利用电子发射极的场致发射器件工作性能改善了，稳定性提高了，并延长了使用寿命。由于内在的低的/负的电子亲和力，电子发射极的金刚石涂层比起先前制造电子发射极所采用的材料来说，呈现出低得多的功函数及更稳定的晶体结构。

Claims (7)

1、一种形成电子发射极的方法，其特征在于以下步骤：
提供一个经选择成形的、具有主表面的衬底(401)；
至少在经选择成形的衬底(401)的主表面的一部分，注入离子，作为集结区(404)；
最好至少在一些集结区(404)生长金刚石晶体(406)；
至少在衬底(401)的主表面的一部分和金刚石晶体(406)上淀积一层导电/半导电材料(407)；以及
去除至少一些经选择成形的衬底(401)，由此形成具有置于至少一部分导电/半导电层(407)上的金刚石涂层(406)的电子发射极。
2、权利要求1所述的方法的进一步特征在于注入离子的步骤包括注入碳离子（404）。
3、权利要求1所述的方法的进一步特征在于提供经选择成形的衬底的步骤包括对含有半导体材料的衬底进行非均质蚀刻。
4、权利要求1所述方法的进一步特征在于提供经选择成形的衬底的步骤包括对半底材料进行离子碾磨。
5、一种电子发射极，其特征在于：
一个经选择形成的、具有主表面的导电/半导电电极（407）;
注入置于上棕导电/半导电电极（407）主表面上的碳集结区（404）的多个离子;以及
置于上述导电/半导电电极（407）主表面上以及在多个碳集结区（404）的一个碳集结区内的至少一个金刚石晶体（406）。
6、权利要求5所述场致发射电子发射极的进一步特征在于：导电/半导电电极有一个包括伸长顶部的比较尖的突出部分（408），并且金刚石晶体（406）就置于伸长的顶部。
7、权利要求5所述场致发射电子发射极的进一步特征在于：至少一个金刚石晶体计入基本均匀分布的多个金刚石晶体之中。
CN92105475A 1991-08-20 1992-07-06 采用金刚石涂层的模制场致发射电子发射极及其制造方法 Expired - Fee Related CN1042470C (zh)

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DE69204940D1 (de) 1995-10-26
ATE128267T1 (de) 1995-10-15
CA2071064A1 (en) 1993-02-21
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US5129850A (en) 1992-07-14
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