CN1042470C - 采用金刚石涂层的模制场致发射电子发射极及其制造方法 - Google Patents

采用金刚石涂层的模制场致发射电子发射极及其制造方法 Download PDF

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CN1042470C
CN1042470C CN92105475A CN92105475A CN1042470C CN 1042470 C CN1042470 C CN 1042470C CN 92105475 A CN92105475 A CN 92105475A CN 92105475 A CN92105475 A CN 92105475A CN 1042470 C CN1042470 C CN 1042470C
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CN1069827A (zh
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罗伯特·C·凯恩
詹姆斯·E·贾斯基
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

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Abstract

置于导电/半导电材料层(407)表面的利用金刚石材料涂层(406)的场致发射电子发射极由包括以下步骤的方法构成：在经选择成形的衬底(401)的表面注入碳离子(404)，对形成金刚石晶粒来说起成核区的作用。在金刚石(406)上淀积导电层(407)，并去除衬底(401)，留下具有金刚石涂层的电子发射极。

Description

采用金刚石涂层的模制场致发射电子发射极及其制造方法
本发明一般涉及场致发射电子发射极，特别是场致发射电子发射极以及利用低的/负的电子亲和力涂层制造场致发射电子发射极的方法。
最好利用加工成形的导电/半导电电极作为电子发射极的场致发射器件在本领域中已为人所知。先有技术的电子发射极呈现出一些不希望有的特性，比如工作电压高，表面不稳定，以及对离子冲击破坏的敏感性。
因此需要有利用电子发射极/电子源的电子器件出现，它至少能克服先有技术的电子发射极的某些缺点。
本发明的目的在于，提供一种新的改进的具有低的/负的电子亲和力的电子发射极，以及其制造方法。
这种需要以及其它需要基本上是通过采用一种形成电子发射极的方法来实现的，该方法包括以下步骤：提供一个经选择成形的、具有主表面的衬底；至少在经选择成形的衬底的主表面的一部分，注入离子，作为成核区；最好至少在一些成核区生成金刚石晶粒；至少在衬底的主表面的一部分和金刚石晶粒上淀积一层导电/半导电材料；以及去除至少一些经选择成形的衬底，由此形成具有置于至少一部分导电/半导电层上的金刚石涂层的电子发射极。
这种需要以及其它需要还通过一种场致发射电子发射极来实现，在本发明的一个实施例中，它包括：从碳成核区生长的金刚石涂层，该成核区置于至少一部分经选择成形的衬底上；在本发明的另一个实施例中，包括具有从碳成核区生长的金刚石涂层场致发射电子发射极，该成核区有选择地置于一部分经选择成形的衬底上。
图1为表示离子注入装置的示意图。
图2是离子注入的剖面图。
图3为表示金刚石生长的环境装置的示意图。
图4A～4D是根据本发明所述方法的各个步骤获得的结构的侧视图。
图5A～5E是根据本发明所述另一种方法的各个步骤获得的结构的侧视图。
图6A～6E是根据本发明所述的再一种方法的各个步骤获得的结构的侧视图。
现在参照图1，该图表示离子注入装置的一个实施例。它有一个真空腔101，其中至少装有一个离子源106和一个衬底(靶)支撑件103。如图所示，有一个离子材料源输送嘴105，向离子源106提供材料。有一个抽空口102，一台抽空装置(未示出)与该抽空口相连，将腔101抽空。在该注入装置的工作过程中，由于电压源108引起的电场的作用，离子速107打在靶上，在本例中它是一个半导体衬底104，于是至少有一些构成离子束107的离子注入衬底104。
图2是放大了的侧视图，表示已经注入离子201的衬底104。取决于相关的加速电场(未示出)的强度，离子有选择地以一个所要求的深度注入衬底104。相应地选择电场强度，使注入的离子基本置于衬底104的表面。
图3表示金刚石生长环境装置的一个实施例。有一个真空腔301，其中配置衬底(靶)支撑件305和加热元件304。作为送气管一部分的气源管303向金刚石生长环境提供反应气源。腔301通过与抽空口302相连的真空泵(未示出)被适当抽空。在工作期间，靶(在本例中是衬底306)置于靶支撑件305上，靠近支撑件305还有一个加热元件304。电源307向加热元件304提供电流，对衬底306加热，在适当的气体组分存在的情况下，衬底306表面发生反应，在此其间生长金刚石。
金刚石的生长至少部分地取决于材料表面的成核能力。在形成金刚石的许多方法中，成核是不规则的，分布是不均匀的，这造成了不希望的和不完全的膜生长。注入衬底306表面的碳离子提供了基本上均匀分布的多个成核区，在这些成核区内开始生长金刚石。
参照图4A，这里画出了根据本发明所述方法的各个步骤获得的结构400的放大侧视图。结构400包括具有主表面的经选择成形的支撑层，以后称之为衬底401，其中衬底401通过任何已知的技术经选择成形，这些技术(但又不限于这些技术)包括各向异性蚀刻和离子碾磨，于是提供一个经选择成形的区域，在本实施例中大体上是一个V形凹口402。用箭头405表示的碳离子束在衬底401上的碳成核区404注入碳离子。
图4B是经过本发明所述方法的其它步骤处理后获得的结构400的侧视图，其中用箭头420表示的反应材料源置于衬底401和靠近的加热元件(图3中304)之间的区域，这使得能在注入的碳成核区生长金刚石晶粒涂层406。
图4C是经过另一步骤后获得的结构400的侧视图，其中导电/半导电材料层407淀积在衬底401主表面的任何暴露部分和金刚石晶粒层406上。淀积导电/半导电材料407后，便用突出部分408填充了凹口402。
图4D是经过本发明所述方法的另一步骤处理后获得的结构400的侧视图，其中至少有一些衬底401已经被去除了。去除衬底401的材料实际上露出了导电/半导电材料层407，特别是露出了上面有金刚石晶粒涂层406的突出部分408。必须懂得，衬底401的材料和导电/半导电材料407应这样选择，以使通过某些方法，如蚀刻、溶解等，使衬底401能相对容易地去除掉，而基本上不影响晶粒层406或导电/半导电材料407。
所得到的包括金刚石涂层的结构形成了场致发射电子发射极，它呈现出许多所希望的工作特性，如降低了工作电压，改进了表面的稳定性，以及减小了对离子冲击破坏的敏感性。注入碳成核区改进了金刚石晶粒的覆盖情况，并且阻止了可能含有所不希望的大量晶粒生长的非均匀涂层的形成。
图5A是根据本发明所述另一种方法的步骤获得的结构500的放大的侧视图。有一层具有主表面的支撑层或者衬底501。衬底501的上面是一层可按图形加工的材料509，如光阻材料或绝缘材料。随后，可按图形加工的材料层509有选择地暴露和显现至少一个孔503，由此经选择的衬底501的各向异性形状就完成了，这样便提供了经选择成形的区域，在本实施例中是一个V形凹口502。用箭头505表示的碳离子束在衬底501的凹口502的成核区504注入碳离子。
图5B是结构500的侧视图，表示在成核区504注入离子之后去除可按图形加工的材料层509的情况。
图5C是经过本发明所述方法的其它步骤处理后获得的结构500的侧视图，其中用箭头520表示的反应材料源置于衬底501和选择的加热元件(见图3)之间的区域，这使得能在注入的碳成核区生长金刚石晶粒506。
图5D是经过另一步骤后获得的结构500的侧视图，其中导电/半导电材料层507淀积在衬底501主表面的任何暴露部分和金刚石晶粒506上。淀积导电/半导电材料507后，便用突出部分508填充了凹口502。
图5E是经过本发明所述方法的另一步骤处理后获得的结构500的侧视图，其中至少有一些衬底501已经被去除了。去除衬底501的材料实际上露出了导电/半导电材料层507，特别是露出了上面有金刚石晶粒506的突出部分508。
利用注入的成核区，并从中生长金刚石晶体，这样做能够形成更均匀的涂层。由于所希望的涂层厚度在10A至不足5000A之间，所以形成涂层的一个重要特征是应尽量减小涂层厚度和覆盖面的不规则性。实现金刚石膜生长的其它方法不能提供基本上均匀的生长厚度和覆盖面。
图6A是根据本发明所述的再一种方法的步骤获得的结构600的侧视图。结构600与先前参照图5B所描述的结构500类似，其中与图5B类似的部分现以数字“6”打头标示。图6A还画出了一个角度很小的材料蒸发部分，被用作在衬底601上淀积材料610，因此经选择成形的衬底601的区域602被部分地封闭了。图6A还画出了用箭头605表示的离子束，由此将碳成核区604注入经选择成形的衬底601的区域602，并基本上是在经选择成形的区域602的最佳部位，在本实施例中是V形凹口的顶部。
图6B是经过另一步骤处理后的结构600，其中已经去除了材料610。
图6C是经过本发明所述方法的其它步骤处理后获得的结构600的侧视图，其中用箭头620表示的反应材料源置于衬底601和靠近的加热元件(见图3)之间的区域，这使得能在注入的碳成核区生长金刚石晶粒606。在图6C所示结构的实例中，最好仅在衬底601的部分暴露表面上，特别是在经选择成形的区域602的最顶部，生长晶体。
图6D是经过另一步骤后获得的结构600的侧视图，其中导电/半导电材料层607淀积在衬底601主表面的任何暴露部分和金刚石晶粒606上。淀积导电/半导电材料607后，使用突出部分608填充了经选择成形的区域602。
图6E是经过本发明所述方法的另一步骤处理后获得的结构600的侧视图，其中至少有一些衬底601已经被去除了。去除衬底601的材料实际上露出了导电/半导电材料层607，特别是露出了突出部分608，在该突出部分的顶部有金刚石晶粒606。
以上描述的用于形成场致发射器件中的电子发射极结构的方法制造的电子发射极结构，呈现出通过先有技术所不能得到的工作特性。采用本发明的方法形成的利用电子发射极的场致发射器件工作性能改善了，稳定性提高了，并延长了使用寿命。由于内在的低的/负的电子亲和力，电子发射极的金刚石涂层比起先前制造电子发射极所采用的材料来说，呈现出低得多的功函数及更稳定的晶体结构。

Claims (7)

1.一种形成电子发射极的方法，其特征在于以下步骤：
提供一个经选择成形的、具有主表面的衬底(401)；
至少在经选择成形的衬底(401)的主表面的一部分，注入离子，作为成核区(404)；
至少在一些成核区(404)生长金刚石晶粒(406)；
至少在衬底(401)的主表面的一部分和金刚石晶粒(406)上淀积一层导电/半导电材料(407)；以及
去除至少一些经选择成形的衬底(401)，由此形成具有置于至少一部分导电/半导电层(407)上的金刚石涂层(406)的电子发射极。
2．根据权利要求1所述的形成电子发射极的方法，其特征在于注入离子的步骤包括注入碳离子(404)。
3．根据权利要求1所述的形成电子发射极的方法，其特征在于，提供经选择成形的衬底的步骤包括对含有半导体材料的衬底进行各相异性蚀刻。
4．根据权利要求1所述的形成电子发射极的方法，其特征在于，提供经选择成形的衬底的步骤包括对衬底材料进行离子碾磨。
5．一种电子发射极，其特征在于：
一个经选择形成的、具有主表面的导电/半导电电极(407)；
注入置于上述导电/半导电电极(407)主表面上的碳成核区(404)的多个离子；以及
置于上述导电/半导电电极(407)主表面上以及在多个碳成核区(404)的一个碳成核区内的至少一个金刚石晶粒(406)。
6．根据权利要求5所述的电子发射极，其特征在于，导电/半导电电极有一个包括伸长顶部的比较尖的突出部分(408)，并且金刚石晶粒(406)就置于伸长的顶部。
7．根据权利要求5所述的电子发射极，其特征在于，至少一个金刚石晶粒包括基本均匀分布的多个金刚石晶粒。
CN92105475A 1991-08-20 1992-07-06 采用金刚石涂层的模制场致发射电子发射极及其制造方法 Expired - Fee Related CN1042470C (zh)

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Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5141460A (en) * 1991-08-20 1992-08-25 Jaskie James E Method of making a field emission electron source employing a diamond coating
JP3255960B2 (ja) * 1991-09-30 2002-02-12 株式会社神戸製鋼所 冷陰極エミッタ素子
US5399238A (en) * 1991-11-07 1995-03-21 Microelectronics And Computer Technology Corporation Method of making field emission tips using physical vapor deposition of random nuclei as etch mask
US5536193A (en) * 1991-11-07 1996-07-16 Microelectronics And Computer Technology Corporation Method of making wide band gap field emitter
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5252833A (en) * 1992-02-05 1993-10-12 Motorola, Inc. Electron source for depletion mode electron emission apparatus
US5686791A (en) 1992-03-16 1997-11-11 Microelectronics And Computer Technology Corp. Amorphic diamond film flat field emission cathode
US5543684A (en) 1992-03-16 1996-08-06 Microelectronics And Computer Technology Corporation Flat panel display based on diamond thin films
US5679043A (en) 1992-03-16 1997-10-21 Microelectronics And Computer Technology Corporation Method of making a field emitter
US5763997A (en) 1992-03-16 1998-06-09 Si Diamond Technology, Inc. Field emission display device
US5675216A (en) 1992-03-16 1997-10-07 Microelectronics And Computer Technololgy Corp. Amorphic diamond film flat field emission cathode
US6127773A (en) 1992-03-16 2000-10-03 Si Diamond Technology, Inc. Amorphic diamond film flat field emission cathode
US5449970A (en) 1992-03-16 1995-09-12 Microelectronics And Computer Technology Corporation Diode structure flat panel display
US5278475A (en) * 1992-06-01 1994-01-11 Motorola, Inc. Cathodoluminescent display apparatus and method for realization using diamond crystallites
KR100307384B1 (ko) * 1993-01-19 2001-12-17 레오니드 다니로비치 카르포브 전계방출장치
US5619092A (en) * 1993-02-01 1997-04-08 Motorola Enhanced electron emitter
JPH08507643A (ja) * 1993-03-11 1996-08-13 フェド．コーポレイション エミッタ先端構造体及び該エミッタ先端構造体を備える電界放出装置並びにその製造方法
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5410166A (en) * 1993-04-28 1995-04-25 The United States Of America As Represented By The Secretary Of The Air Force P-N junction negative electron affinity cathode
US5387844A (en) * 1993-06-15 1995-02-07 Micron Display Technology, Inc. Flat panel display drive circuit with switched drive current
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US7025892B1 (en) 1993-09-08 2006-04-11 Candescent Technologies Corporation Method for creating gated filament structures for field emission displays
WO1995012835A1 (en) 1993-11-04 1995-05-11 Microelectronics And Computer Technology Corporation Methods for fabricating flat panel display systems and components
US5602439A (en) * 1994-02-14 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Diamond-graphite field emitters
US5578901A (en) * 1994-02-14 1996-11-26 E. I. Du Pont De Nemours And Company Diamond fiber field emitters
EP0675519A1 (en) * 1994-03-30 1995-10-04 AT&T Corp. Apparatus comprising field emitters
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US5552659A (en) * 1994-06-29 1996-09-03 Silicon Video Corporation Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
RU2074444C1 (ru) * 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Матричный автоэлектронный катод и электронный прибор для оптического отображения информации
US6204834B1 (en) 1994-08-17 2001-03-20 Si Diamond Technology, Inc. System and method for achieving uniform screen brightness within a matrix display
EP0700065B1 (en) * 1994-08-31 2001-09-19 AT&T Corp. Field emission device and method for making same
US5504385A (en) 1994-08-31 1996-04-02 At&T Corp. Spaced-gate emission device and method for making same
US5531880A (en) * 1994-09-13 1996-07-02 Microelectronics And Computer Technology Corporation Method for producing thin, uniform powder phosphor for display screens
US5484314A (en) * 1994-10-13 1996-01-16 Micron Semiconductor, Inc. Micro-pillar fabrication utilizing a stereolithographic printing process
US5492234A (en) * 1994-10-13 1996-02-20 Micron Technology, Inc. Method for fabricating spacer support structures useful in flat panel displays
US5637950A (en) 1994-10-31 1997-06-10 Lucent Technologies Inc. Field emission devices employing enhanced diamond field emitters
US5623180A (en) 1994-10-31 1997-04-22 Lucent Technologies Inc. Electron field emitters comprising particles cooled with low voltage emitting material
FR2726689B1 (fr) * 1994-11-08 1996-11-29 Commissariat Energie Atomique Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence
US5592053A (en) * 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US5616368A (en) * 1995-01-31 1997-04-01 Lucent Technologies Inc. Field emission devices employing activated diamond particle emitters and methods for making same
US5561340A (en) * 1995-01-31 1996-10-01 Lucent Technologies Inc. Field emission display having corrugated support pillars and method for manufacturing
US5598056A (en) * 1995-01-31 1997-01-28 Lucent Technologies Inc. Multilayer pillar structure for improved field emission devices
GB9502435D0 (en) * 1995-02-08 1995-03-29 Smiths Industries Plc Displays
US6296740B1 (en) 1995-04-24 2001-10-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US5628659A (en) * 1995-04-24 1997-05-13 Microelectronics And Computer Corporation Method of making a field emission electron source with random micro-tip structures
US5679895A (en) * 1995-05-01 1997-10-21 Kobe Steel Usa, Inc. Diamond field emission acceleration sensor
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
US5647998A (en) * 1995-06-13 1997-07-15 Advanced Vision Technologies, Inc. Fabrication process for laminar composite lateral field-emission cathode
AU6626096A (en) * 1995-08-04 1997-03-05 Printable Field Emitters Limited Field electron emission materials and devices
US5663742A (en) * 1995-08-21 1997-09-02 Micron Display Technology, Inc. Compressed field emission display
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5635988A (en) * 1995-08-24 1997-06-03 Micron Display Technology, Inc. Apparatus and method for maintaining synchronism between a picture signal and a matrix scanned array
US5610667A (en) * 1995-08-24 1997-03-11 Micron Display Technology, Inc. Apparatus and method for maintaining synchronism between a picture signal and a matrix scanned array
US5773927A (en) 1995-08-30 1998-06-30 Micron Display Technology, Inc. Field emission display device with focusing electrodes at the anode and method for constructing same
US5648699A (en) 1995-11-09 1997-07-15 Lucent Technologies Inc. Field emission devices employing improved emitters on metal foil and methods for making such devices
DE69604931T2 (de) * 1995-11-15 2000-05-18 E.I. Du Pont De Nemours And Co., Wilmington Verfahren zur herstellung einer feldemissionskathode mittels eines teilchenförmigen feldemissionsmaterial
US6117294A (en) * 1996-01-19 2000-09-12 Micron Technology, Inc. Black matrix material and methods related thereto
JP2871579B2 (ja) * 1996-03-28 1999-03-17 日本電気株式会社 発光装置およびこれに用いる冷陰極
US5668437A (en) * 1996-05-14 1997-09-16 Micro Display Technology, Inc. Praseodymium-manganese oxide layer for use in field emission displays
WO1998044529A1 (en) * 1996-06-25 1998-10-08 Vanderbilt University Microtip vacuum field emitter structures, arrays, and devices, and methods of fabrication
RU2158037C2 (ru) * 1996-07-16 2000-10-20 ООО "Высокие технологии" Способ получения алмазных пленок методом газофазного синтеза
US6231412B1 (en) * 1996-09-18 2001-05-15 Canon Kabushiki Kaisha Method of manufacturing and adjusting electron source array
US5854615A (en) * 1996-10-03 1998-12-29 Micron Display Technology, Inc. Matrix addressable display with delay locked loop controller
US5973452A (en) * 1996-11-01 1999-10-26 Si Diamond Technology, Inc. Display
US6020677A (en) * 1996-11-13 2000-02-01 E. I. Du Pont De Nemours And Company Carbon cone and carbon whisker field emitters
US6356014B2 (en) 1997-03-27 2002-03-12 Candescent Technologies Corporation Electron emitters coated with carbon containing layer
US6064148A (en) * 1997-05-21 2000-05-16 Si Diamond Technology, Inc. Field emission device
US6091190A (en) * 1997-07-28 2000-07-18 Motorola, Inc. Field emission device
US6326725B1 (en) 1998-05-26 2001-12-04 Micron Technology, Inc. Focusing electrode for field emission displays and method
US6630772B1 (en) 1998-09-21 2003-10-07 Agere Systems Inc. Device comprising carbon nanotube field emitter structure and process for forming device
US6283812B1 (en) 1999-01-25 2001-09-04 Agere Systems Guardian Corp. Process for fabricating article comprising aligned truncated carbon nanotubes
US6250984B1 (en) 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
US6235545B1 (en) * 1999-02-16 2001-05-22 Micron Technology, Inc. Methods of treating regions of substantially upright silicon-comprising structures, method of treating silicon-comprising emitter structures, methods of forming field emission display devices, and cathode assemblies
US6741019B1 (en) 1999-10-18 2004-05-25 Agere Systems, Inc. Article comprising aligned nanowires
US6882094B2 (en) * 2000-02-16 2005-04-19 Fullerene International Corporation Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission
US7227924B2 (en) * 2000-10-06 2007-06-05 The University Of North Carolina At Chapel Hill Computed tomography scanning system and method using a field emission x-ray source
US7082182B2 (en) * 2000-10-06 2006-07-25 The University Of North Carolina At Chapel Hill Computed tomography system for imaging of human and small animal
US6876724B2 (en) * 2000-10-06 2005-04-05 The University Of North Carolina - Chapel Hill Large-area individually addressable multi-beam x-ray system and method of forming same
US6553096B1 (en) 2000-10-06 2003-04-22 The University Of North Carolina Chapel Hill X-ray generating mechanism using electron field emission cathode
US7085351B2 (en) * 2000-10-06 2006-08-01 University Of North Carolina At Chapel Hill Method and apparatus for controlling electron beam current
US6554673B2 (en) 2001-07-31 2003-04-29 The United States Of America As Represented By The Secretary Of The Navy Method of making electron emitters
US6891324B2 (en) * 2002-06-26 2005-05-10 Nanodynamics, Inc. Carbon-metal nano-composite materials for field emission cathodes and devices
CN100390921C (zh) * 2003-06-20 2008-05-28 中国科学院物理研究所 一种金刚石膜平面场发射阴极及其制作方法
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements
KR100678727B1 (ko) * 2005-04-13 2007-02-05 한국과학기술연구원 다공성 모재를 이용한 다이아몬드 쉘 및 그 제조방법
US8155262B2 (en) * 2005-04-25 2012-04-10 The University Of North Carolina At Chapel Hill Methods, systems, and computer program products for multiplexing computed tomography
US8189893B2 (en) * 2006-05-19 2012-05-29 The University Of North Carolina At Chapel Hill Methods, systems, and computer program products for binary multiplexing x-ray radiography
CN101842052B (zh) * 2007-07-19 2013-11-20 北卡罗来纳大学查珀尔希尔分校 固定x射线数字化乳房断层合成系统和相关方法
US8600003B2 (en) * 2009-01-16 2013-12-03 The University Of North Carolina At Chapel Hill Compact microbeam radiation therapy systems and methods for cancer treatment and research
US8269931B2 (en) 2009-09-14 2012-09-18 The Aerospace Corporation Systems and methods for preparing films using sequential ion implantation, and films formed using same
US8358739B2 (en) 2010-09-03 2013-01-22 The University Of North Carolina At Chapel Hill Systems and methods for temporal multiplexing X-ray imaging
US8946864B2 (en) 2011-03-16 2015-02-03 The Aerospace Corporation Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same
US9324579B2 (en) 2013-03-14 2016-04-26 The Aerospace Corporation Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates
US9782136B2 (en) 2014-06-17 2017-10-10 The University Of North Carolina At Chapel Hill Intraoral tomosynthesis systems, methods, and computer readable media for dental imaging
US10980494B2 (en) 2014-10-20 2021-04-20 The University Of North Carolina At Chapel Hill Systems and related methods for stationary digital chest tomosynthesis (s-DCT) imaging
US10835199B2 (en) 2016-02-01 2020-11-17 The University Of North Carolina At Chapel Hill Optical geometry calibration devices, systems, and related methods for three dimensional x-ray imaging
CN111996581B (zh) * 2020-07-08 2021-10-26 西安电子科技大学 一种单晶金刚石与衬底无损耗快速分离方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
JPS62140332A (ja) * 1985-12-16 1987-06-23 Hitachi Ltd 電界放射陰極
EP0278405A2 (en) * 1987-02-06 1988-08-17 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1599668A (en) * 1977-06-02 1981-10-07 Nat Res Dev Semiconductors
JPS5436828B2 (zh) * 1974-08-16 1979-11-12
US4164680A (en) * 1975-08-27 1979-08-14 Villalobos Humberto F Polycrystalline diamond emitter
GB8519905D0 (en) * 1985-08-08 1985-09-18 Smit & Sons Diamond Tools Rotary grinding wheel dressers
EP0307109A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
WO1989011897A1 (en) * 1988-06-03 1989-12-14 Massachusetts Institute Of Technology Silicon dioxide films on diamond
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
JPS62140332A (ja) * 1985-12-16 1987-06-23 Hitachi Ltd 電界放射陰極
EP0278405A2 (en) * 1987-02-06 1988-08-17 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same

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ATE128267T1 (de) 1995-10-15
CA2071064A1 (en) 1993-02-21
DE69204940T2 (de) 1996-05-15
US5129850A (en) 1992-07-14
DK0528322T3 (da) 1995-11-06
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JP2742749B2 (ja) 1998-04-22
EP0528322B1 (en) 1995-09-20

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