ES2074536T3 - Procedimiento y aparato para el recocido de semiconductores. - Google Patents

Procedimiento y aparato para el recocido de semiconductores.

Info

Publication number
ES2074536T3
ES2074536T3 ES90304436T ES90304436T ES2074536T3 ES 2074536 T3 ES2074536 T3 ES 2074536T3 ES 90304436 T ES90304436 T ES 90304436T ES 90304436 T ES90304436 T ES 90304436T ES 2074536 T3 ES2074536 T3 ES 2074536T3
Authority
ES
Spain
Prior art keywords
rta
annealing
black box
period
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES90304436T
Other languages
English (en)
Inventor
Karen A Grim
Bertram Schwartz
Shobha Singh
Uitert Legrand G Van
George J Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2074536T3 publication Critical patent/ES2074536T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Dicing (AREA)

Abstract

ESTE INVENTO SE DIRIGE A LA FABRICACION DE DISPOSITIVOS SEMICONDUCTORES, ESPECIALMENTE LOS QUE COMPRENDEN MATERIALES SEMICONDUCTORES DE COMPUESTOS III-V Y II-VI, E INCLUYE EL RECOCIDO, ESPECIALMENTE EL RECOCIDO TERMICO RAPIDO (RTA), DE PLAQUITAS SEMICONDUCTORAS, ESPECIALMENTE LAS APLICADAS CON IMPURIFICANTE. EL INVENTO TRATA TAMBIEN DE UNA APLICACION DE CAJA NEGRA UTILIZADA EN COMBINACION CON EL RTA. EL PROCESO COMPRENDE EL ENCIERRE DE UNA PLAQUITA (1) QUE SE VA A RECOCER, DENTRO DE UNA "CAJA NEGRA" QUE CONTIENE COMPONENTES (10, 11, 12) DE UN MATERIAL DE CUERPO NEGRO, Y EL SOMETIMIENTO DE LA CAJA NEGRA CON LA PLAQUITA EN SU INTERIOR A UN RTA. EN UNA REALIZACION PREFERENTE, EL RTA COMPRENDE (A) UNA FASE DE PRE-RECOCIDO QUE INCLUYE EL CALENTAMIENTO A UNA TEMPERATURA Y DURANTE UN PERIODO DE TIEMPO SUFICIENTE PARA PRECALENTAR LA PLAQUITA PARA REDUCIR EL CHOQUE TERMICO DEBIDO A UNA FASE PRINCIPAL DE RECOCIDO, (B) LA FASE PRINCIPAL DE RECOCIDO, QUE SE REALIZA A UNA TEMPERATURA Y DURANTE UN PERIODO DE TIEMPO SUFICIENTE PARA ELIMINAR EL DAÑO OCASIONADO A DICHA SUPERFICIE POR LA APLICACION DEL IMPURIFICANTE Y PARA ACTIVAR EL IMPURIFICANTE APLICADO, Y (C) UNA FASE DE POSRECOCIDO REALIZADA A UNA TEMPERATURA Y DURANTE UN PERIODO DE TIEMPO SUFICIENTE PARA ELIMINAR LAS TENSIONES QUE PUEDEN DERIVARSE DE LA FASE DE RECOCIDO PRINCIPAL. EL USO COMBINADOS DE RTA Y DE LA CAJA NEGRA LLEVA A QUE LAS PLAQUITAS SE LIBEREN PRACTICAMENTE DE LINEAS DE FALLAS Y QUEDEN CON ALTAS MOVILIDADES REPRODUCIBLES Y ACTIVACION UNIFORME.
ES90304436T 1989-05-01 1990-04-25 Procedimiento y aparato para el recocido de semiconductores. Expired - Lifetime ES2074536T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/345,923 US5011794A (en) 1989-05-01 1989-05-01 Procedure for rapid thermal annealing of implanted semiconductors

Publications (1)

Publication Number Publication Date
ES2074536T3 true ES2074536T3 (es) 1995-09-16

Family

ID=23357116

Family Applications (1)

Application Number Title Priority Date Filing Date
ES90304436T Expired - Lifetime ES2074536T3 (es) 1989-05-01 1990-04-25 Procedimiento y aparato para el recocido de semiconductores.

Country Status (8)

Country Link
US (1) US5011794A (es)
EP (1) EP0399662B1 (es)
JP (1) JPH0750691B2 (es)
KR (1) KR950014610B1 (es)
CA (1) CA2015411C (es)
DE (1) DE69020802T2 (es)
ES (1) ES2074536T3 (es)
HK (1) HK100596A (es)

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0645131B2 (ja) * 1990-03-28 1994-06-15 日本碍子株式会社 セラミック長尺成形体乾燥用治具
JPH04198095A (ja) * 1990-11-28 1992-07-17 Fujitsu Ltd 化合物半導体薄膜成長方法
DE4140387C2 (de) * 1991-12-07 1998-10-15 Inst Halbleiterphysik Gmbh Vorrichtung und Verfahren zur verformungsfreien Bearbeitung von Halbleitermaterialscheiben in schnellen thermischen Prozessen
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5680502A (en) * 1995-04-03 1997-10-21 Varian Associates, Inc. Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US6002109A (en) 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5861609A (en) * 1995-10-02 1999-01-19 Kaltenbrunner; Guenter Method and apparatus for rapid thermal processing
US6133550A (en) 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
JP3563224B2 (ja) * 1996-03-25 2004-09-08 住友電気工業株式会社 半導体ウエハの評価方法、熱処理方法、および熱処理装置
US5837555A (en) * 1996-04-12 1998-11-17 Ast Electronik Apparatus and method for rapid thermal processing
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US7470142B2 (en) * 2004-06-21 2008-12-30 Sang-Yun Lee Wafer bonding method
JPH10154713A (ja) * 1996-11-22 1998-06-09 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法およびシリコンウエーハ
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US6207591B1 (en) * 1997-11-14 2001-03-27 Kabushiki Kaisha Toshiba Method and equipment for manufacturing semiconductor device
DE19808246B4 (de) 1998-02-27 2004-05-13 Daimlerchrysler Ag Verfahren zur Herstellung eines mikroelektronischen Halbleiterbauelements mittels Ionenimplatation
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
DE19920871B4 (de) * 1999-05-06 2004-07-01 Steag Rtp Systems Gmbh Verfahren zum Aktivieren von Ladungsträgern durch strahlungsunterstützte Wärmebehandlung
US6416318B1 (en) * 1999-06-16 2002-07-09 Silicon Valley Group, Inc. Process chamber assembly with reflective hot plate and pivoting lid
JP2001007039A (ja) 1999-06-18 2001-01-12 Hitachi Ltd 半導体集積回路装置の製造方法
DE19936081A1 (de) 1999-07-30 2001-02-08 Siemens Ag Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper
ES2353106T3 (es) 1999-10-20 2011-02-25 Saint-Gobain Glass France S.A. Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso.
US6703589B1 (en) 1999-10-20 2004-03-09 Shell Solar Gmbh Device and method for tempering at least one process good
JP4577462B2 (ja) * 1999-11-05 2010-11-10 住友電気工業株式会社 半導体の熱処理方法
US6342691B1 (en) 1999-11-12 2002-01-29 Mattson Technology, Inc. Apparatus and method for thermal processing of semiconductor substrates
AU2001252071A1 (en) * 2000-05-19 2001-11-26 Mcmaster University A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures
US6797533B2 (en) * 2000-05-19 2004-09-28 Mcmaster University Quantum well intermixing in InGaAsP structures induced by low temperature grown InP
US6599815B1 (en) * 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
WO2002047123A1 (en) * 2000-12-04 2002-06-13 Vortek Industries Ltd. Heat-treating methods and systems
TW480677B (en) * 2001-04-04 2002-03-21 Macronix Int Co Ltd Method of fabricating a nitride read only memory cell
US6521503B2 (en) 2001-04-23 2003-02-18 Asm America, Inc. High temperature drop-off of a substrate
US7231141B2 (en) * 2001-04-23 2007-06-12 Asm America, Inc. High temperature drop-off of a substrate
KR100431657B1 (ko) * 2001-09-25 2004-05-17 삼성전자주식회사 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치
US7026229B2 (en) * 2001-11-28 2006-04-11 Vartan Semiconductor Equipment Associates, Inc. Athermal annealing with rapid thermal annealing system and method
CN100416243C (zh) * 2001-12-26 2008-09-03 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US7013091B2 (en) * 2002-01-16 2006-03-14 Pts Corporation Synchronization of pulse and data sources
US20030170583A1 (en) * 2002-03-01 2003-09-11 Hitachi Kokusai Electric Inc. Heat treatment apparatus and a method for fabricating substrates
US6776849B2 (en) * 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6861321B2 (en) 2002-04-05 2005-03-01 Asm America, Inc. Method of loading a wafer onto a wafer holder to reduce thermal shock
DE10234694A1 (de) * 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat
US6933158B1 (en) * 2002-10-31 2005-08-23 Advanced Micro Devices, Inc. Method of monitoring anneal processes using scatterometry, and system for performing same
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
WO2004057650A1 (en) 2002-12-20 2004-07-08 Mattson Technology Canada, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
WO2004072323A2 (en) * 2003-02-07 2004-08-26 Solaicx High reflectivity atmospheric pressure furnace for preventing contamination of a work piece
JP3929939B2 (ja) * 2003-06-25 2007-06-13 株式会社東芝 処理装置、製造装置、処理方法及び電子装置の製造方法
JP5630935B2 (ja) * 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
DE102005030851A1 (de) * 2005-07-01 2007-01-04 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
EP1739213B1 (de) * 2005-07-01 2011-04-13 Freiberger Compound Materials GmbH Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer
EP1772901B1 (en) * 2005-10-07 2012-07-25 Rohm and Haas Electronic Materials, L.L.C. Wafer holding article and method for semiconductor processing
JP4907222B2 (ja) * 2006-05-01 2012-03-28 三菱電機株式会社 半導体ウエハの加熱装置
JP2008053521A (ja) * 2006-08-25 2008-03-06 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコンウェーハの熱処理方法
WO2008058397A1 (en) * 2006-11-15 2008-05-22 Mattson Technology Canada, Inc. Systems and methods for supporting a workpiece during heat-treating
US20080160731A1 (en) * 2006-12-27 2008-07-03 Dongbu Hitek Co., Ltd. Method for fabricating cmos image sensor
KR101610269B1 (ko) 2008-05-16 2016-04-07 맷슨 테크놀로지, 인크. 워크피스 파손 방지 방법 및 장치
US7943527B2 (en) * 2008-05-30 2011-05-17 The Board Of Trustees Of The University Of Illinois Surface preparation for thin film growth by enhanced nucleation
US8912083B2 (en) * 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
JP6482180B2 (ja) * 2014-03-25 2019-03-13 住友重機械工業株式会社 半導体装置の製造方法
EP3690962A1 (de) * 2019-01-31 2020-08-05 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers
US11340400B2 (en) 2019-03-06 2022-05-24 Massachusetts Institute Of Technology Hybrid integration for photonic integrated circuits
US11710656B2 (en) 2019-09-30 2023-07-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor-on-insulator (SOI) substrate
DE102022130610A1 (de) * 2022-11-18 2024-05-23 Ams-Osram International Gmbh Herstellung eines substrats

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143520A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 半導体結晶の熱処理方法
JPS59136925A (ja) * 1983-01-25 1984-08-06 Sumitomo Electric Ind Ltd 化合物半導体の熱処理方法
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
JPS60239400A (ja) * 1984-05-11 1985-11-28 Sumitomo Electric Ind Ltd 化合物半導体のアニ−ル法
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
US4731293A (en) * 1986-06-20 1988-03-15 American Telephone And Telegraph Company, At&T Bell Laboratories Fabrication of devices using phosphorus glasses
US4725565A (en) * 1986-06-26 1988-02-16 Gte Laboratories Incorporated Method of diffusing conductivity type imparting material into III-V compound semiconductor material
JPS648616A (en) * 1987-06-30 1989-01-12 Sharp Kk Lamp annealing apparatus

Also Published As

Publication number Publication date
EP0399662B1 (en) 1995-07-12
US5011794A (en) 1991-04-30
EP0399662A3 (en) 1992-03-04
JPH02303121A (ja) 1990-12-17
KR900019149A (ko) 1990-12-24
KR950014610B1 (ko) 1995-12-11
CA2015411C (en) 1994-03-15
DE69020802T2 (de) 1995-12-07
HK100596A (en) 1996-06-14
JPH0750691B2 (ja) 1995-05-31
DE69020802D1 (de) 1995-08-17
CA2015411A1 (en) 1990-11-01
EP0399662A2 (en) 1990-11-28

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