ES2074536T3 - Procedimiento y aparato para el recocido de semiconductores. - Google Patents
Procedimiento y aparato para el recocido de semiconductores.Info
- Publication number
- ES2074536T3 ES2074536T3 ES90304436T ES90304436T ES2074536T3 ES 2074536 T3 ES2074536 T3 ES 2074536T3 ES 90304436 T ES90304436 T ES 90304436T ES 90304436 T ES90304436 T ES 90304436T ES 2074536 T3 ES2074536 T3 ES 2074536T3
- Authority
- ES
- Spain
- Prior art keywords
- rta
- annealing
- black box
- period
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000137 annealing Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000008719 thickening Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Dicing (AREA)
Abstract
ESTE INVENTO SE DIRIGE A LA FABRICACION DE DISPOSITIVOS SEMICONDUCTORES, ESPECIALMENTE LOS QUE COMPRENDEN MATERIALES SEMICONDUCTORES DE COMPUESTOS III-V Y II-VI, E INCLUYE EL RECOCIDO, ESPECIALMENTE EL RECOCIDO TERMICO RAPIDO (RTA), DE PLAQUITAS SEMICONDUCTORAS, ESPECIALMENTE LAS APLICADAS CON IMPURIFICANTE. EL INVENTO TRATA TAMBIEN DE UNA APLICACION DE CAJA NEGRA UTILIZADA EN COMBINACION CON EL RTA. EL PROCESO COMPRENDE EL ENCIERRE DE UNA PLAQUITA (1) QUE SE VA A RECOCER, DENTRO DE UNA "CAJA NEGRA" QUE CONTIENE COMPONENTES (10, 11, 12) DE UN MATERIAL DE CUERPO NEGRO, Y EL SOMETIMIENTO DE LA CAJA NEGRA CON LA PLAQUITA EN SU INTERIOR A UN RTA. EN UNA REALIZACION PREFERENTE, EL RTA COMPRENDE (A) UNA FASE DE PRE-RECOCIDO QUE INCLUYE EL CALENTAMIENTO A UNA TEMPERATURA Y DURANTE UN PERIODO DE TIEMPO SUFICIENTE PARA PRECALENTAR LA PLAQUITA PARA REDUCIR EL CHOQUE TERMICO DEBIDO A UNA FASE PRINCIPAL DE RECOCIDO, (B) LA FASE PRINCIPAL DE RECOCIDO, QUE SE REALIZA A UNA TEMPERATURA Y DURANTE UN PERIODO DE TIEMPO SUFICIENTE PARA ELIMINAR EL DAÑO OCASIONADO A DICHA SUPERFICIE POR LA APLICACION DEL IMPURIFICANTE Y PARA ACTIVAR EL IMPURIFICANTE APLICADO, Y (C) UNA FASE DE POSRECOCIDO REALIZADA A UNA TEMPERATURA Y DURANTE UN PERIODO DE TIEMPO SUFICIENTE PARA ELIMINAR LAS TENSIONES QUE PUEDEN DERIVARSE DE LA FASE DE RECOCIDO PRINCIPAL. EL USO COMBINADOS DE RTA Y DE LA CAJA NEGRA LLEVA A QUE LAS PLAQUITAS SE LIBEREN PRACTICAMENTE DE LINEAS DE FALLAS Y QUEDEN CON ALTAS MOVILIDADES REPRODUCIBLES Y ACTIVACION UNIFORME.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/345,923 US5011794A (en) | 1989-05-01 | 1989-05-01 | Procedure for rapid thermal annealing of implanted semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2074536T3 true ES2074536T3 (es) | 1995-09-16 |
Family
ID=23357116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES90304436T Expired - Lifetime ES2074536T3 (es) | 1989-05-01 | 1990-04-25 | Procedimiento y aparato para el recocido de semiconductores. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5011794A (es) |
EP (1) | EP0399662B1 (es) |
JP (1) | JPH0750691B2 (es) |
KR (1) | KR950014610B1 (es) |
CA (1) | CA2015411C (es) |
DE (1) | DE69020802T2 (es) |
ES (1) | ES2074536T3 (es) |
HK (1) | HK100596A (es) |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0645131B2 (ja) * | 1990-03-28 | 1994-06-15 | 日本碍子株式会社 | セラミック長尺成形体乾燥用治具 |
JPH04198095A (ja) * | 1990-11-28 | 1992-07-17 | Fujitsu Ltd | 化合物半導体薄膜成長方法 |
DE4140387C2 (de) * | 1991-12-07 | 1998-10-15 | Inst Halbleiterphysik Gmbh | Vorrichtung und Verfahren zur verformungsfreien Bearbeitung von Halbleitermaterialscheiben in schnellen thermischen Prozessen |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5820686A (en) * | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5680502A (en) * | 1995-04-03 | 1997-10-21 | Varian Associates, Inc. | Thin film heat treatment apparatus with conductively heated table and surrounding radiation shield |
US5830277A (en) * | 1995-05-26 | 1998-11-03 | Mattson Technology, Inc. | Thermal processing system with supplemental resistive heater and shielded optical pyrometry |
US6002109A (en) | 1995-07-10 | 1999-12-14 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
US6133550A (en) | 1996-03-22 | 2000-10-17 | Sandia Corporation | Method and apparatus for thermal processing of semiconductor substrates |
JP3563224B2 (ja) * | 1996-03-25 | 2004-09-08 | 住友電気工業株式会社 | 半導体ウエハの評価方法、熱処理方法、および熱処理装置 |
US5837555A (en) * | 1996-04-12 | 1998-11-17 | Ast Electronik | Apparatus and method for rapid thermal processing |
US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
US6198074B1 (en) | 1996-09-06 | 2001-03-06 | Mattson Technology, Inc. | System and method for rapid thermal processing with transitional heater |
US7470142B2 (en) * | 2004-06-21 | 2008-12-30 | Sang-Yun Lee | Wafer bonding method |
JPH10154713A (ja) * | 1996-11-22 | 1998-06-09 | Shin Etsu Handotai Co Ltd | シリコンウエーハの熱処理方法およびシリコンウエーハ |
US5960158A (en) | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US6207591B1 (en) * | 1997-11-14 | 2001-03-27 | Kabushiki Kaisha Toshiba | Method and equipment for manufacturing semiconductor device |
DE19808246B4 (de) | 1998-02-27 | 2004-05-13 | Daimlerchrysler Ag | Verfahren zur Herstellung eines mikroelektronischen Halbleiterbauelements mittels Ionenimplatation |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
DE19920871B4 (de) * | 1999-05-06 | 2004-07-01 | Steag Rtp Systems Gmbh | Verfahren zum Aktivieren von Ladungsträgern durch strahlungsunterstützte Wärmebehandlung |
US6416318B1 (en) * | 1999-06-16 | 2002-07-09 | Silicon Valley Group, Inc. | Process chamber assembly with reflective hot plate and pivoting lid |
JP2001007039A (ja) | 1999-06-18 | 2001-01-12 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
DE19936081A1 (de) | 1999-07-30 | 2001-02-08 | Siemens Ag | Vorrichtung und Verfahren zum Temperieren eines Mehrschichtkörpers, sowie ein unter Anwendung des Verfahrens hergestellter Mehrschichtkörper |
ES2353106T3 (es) | 1999-10-20 | 2011-02-25 | Saint-Gobain Glass France S.A. | Dispositivo y procedimiento para la atemperación simultánea de varios productos en proceso. |
US6703589B1 (en) | 1999-10-20 | 2004-03-09 | Shell Solar Gmbh | Device and method for tempering at least one process good |
JP4577462B2 (ja) * | 1999-11-05 | 2010-11-10 | 住友電気工業株式会社 | 半導体の熱処理方法 |
US6342691B1 (en) | 1999-11-12 | 2002-01-29 | Mattson Technology, Inc. | Apparatus and method for thermal processing of semiconductor substrates |
AU2001252071A1 (en) * | 2000-05-19 | 2001-11-26 | Mcmaster University | A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures |
US6797533B2 (en) * | 2000-05-19 | 2004-09-28 | Mcmaster University | Quantum well intermixing in InGaAsP structures induced by low temperature grown InP |
US6599815B1 (en) * | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
WO2002047123A1 (en) * | 2000-12-04 | 2002-06-13 | Vortek Industries Ltd. | Heat-treating methods and systems |
TW480677B (en) * | 2001-04-04 | 2002-03-21 | Macronix Int Co Ltd | Method of fabricating a nitride read only memory cell |
US6521503B2 (en) | 2001-04-23 | 2003-02-18 | Asm America, Inc. | High temperature drop-off of a substrate |
US7231141B2 (en) * | 2001-04-23 | 2007-06-12 | Asm America, Inc. | High temperature drop-off of a substrate |
KR100431657B1 (ko) * | 2001-09-25 | 2004-05-17 | 삼성전자주식회사 | 웨이퍼의 처리 방법 및 처리 장치, 그리고 웨이퍼의 식각방법 및 식각 장치 |
US7026229B2 (en) * | 2001-11-28 | 2006-04-11 | Vartan Semiconductor Equipment Associates, Inc. | Athermal annealing with rapid thermal annealing system and method |
CN100416243C (zh) * | 2001-12-26 | 2008-09-03 | 加拿大马特森技术有限公司 | 测量温度和热处理的方法及系统 |
US7013091B2 (en) * | 2002-01-16 | 2006-03-14 | Pts Corporation | Synchronization of pulse and data sources |
US20030170583A1 (en) * | 2002-03-01 | 2003-09-11 | Hitachi Kokusai Electric Inc. | Heat treatment apparatus and a method for fabricating substrates |
US6776849B2 (en) * | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US6861321B2 (en) | 2002-04-05 | 2005-03-01 | Asm America, Inc. | Method of loading a wafer onto a wafer holder to reduce thermal shock |
DE10234694A1 (de) * | 2002-07-30 | 2004-02-12 | Infineon Technologies Ag | Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat |
US6933158B1 (en) * | 2002-10-31 | 2005-08-23 | Advanced Micro Devices, Inc. | Method of monitoring anneal processes using scatterometry, and system for performing same |
FR2846786B1 (fr) * | 2002-11-05 | 2005-06-17 | Procede de recuit thermique rapide de tranches a couronne | |
WO2004057650A1 (en) | 2002-12-20 | 2004-07-08 | Mattson Technology Canada, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
WO2004072323A2 (en) * | 2003-02-07 | 2004-08-26 | Solaicx | High reflectivity atmospheric pressure furnace for preventing contamination of a work piece |
JP3929939B2 (ja) * | 2003-06-25 | 2007-06-13 | 株式会社東芝 | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
JP5630935B2 (ja) * | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
DE102005030851A1 (de) * | 2005-07-01 | 2007-01-04 | Freiberger Compound Materials Gmbh | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
EP1739213B1 (de) * | 2005-07-01 | 2011-04-13 | Freiberger Compound Materials GmbH | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
JP4907222B2 (ja) * | 2006-05-01 | 2012-03-28 | 三菱電機株式会社 | 半導体ウエハの加熱装置 |
JP2008053521A (ja) * | 2006-08-25 | 2008-03-06 | Sumco Techxiv株式会社 | シリコンウェーハの熱処理方法 |
WO2008058397A1 (en) * | 2006-11-15 | 2008-05-22 | Mattson Technology Canada, Inc. | Systems and methods for supporting a workpiece during heat-treating |
US20080160731A1 (en) * | 2006-12-27 | 2008-07-03 | Dongbu Hitek Co., Ltd. | Method for fabricating cmos image sensor |
KR101610269B1 (ko) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
US7943527B2 (en) * | 2008-05-30 | 2011-05-17 | The Board Of Trustees Of The University Of Illinois | Surface preparation for thin film growth by enhanced nucleation |
US8912083B2 (en) * | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
JP6482180B2 (ja) * | 2014-03-25 | 2019-03-13 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
US11340400B2 (en) | 2019-03-06 | 2022-05-24 | Massachusetts Institute Of Technology | Hybrid integration for photonic integrated circuits |
US11710656B2 (en) | 2019-09-30 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming semiconductor-on-insulator (SOI) substrate |
DE102022130610A1 (de) * | 2022-11-18 | 2024-05-23 | Ams-Osram International Gmbh | Herstellung eines substrats |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58143520A (ja) * | 1982-02-22 | 1983-08-26 | Toshiba Corp | 半導体結晶の熱処理方法 |
JPS59136925A (ja) * | 1983-01-25 | 1984-08-06 | Sumitomo Electric Ind Ltd | 化合物半導体の熱処理方法 |
US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
JPS60239400A (ja) * | 1984-05-11 | 1985-11-28 | Sumitomo Electric Ind Ltd | 化合物半導体のアニ−ル法 |
US4794217A (en) * | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
US4731293A (en) * | 1986-06-20 | 1988-03-15 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabrication of devices using phosphorus glasses |
US4725565A (en) * | 1986-06-26 | 1988-02-16 | Gte Laboratories Incorporated | Method of diffusing conductivity type imparting material into III-V compound semiconductor material |
JPS648616A (en) * | 1987-06-30 | 1989-01-12 | Sharp Kk | Lamp annealing apparatus |
-
1989
- 1989-05-01 US US07/345,923 patent/US5011794A/en not_active Expired - Lifetime
-
1990
- 1990-04-25 CA CA002015411A patent/CA2015411C/en not_active Expired - Fee Related
- 1990-04-25 EP EP90304436A patent/EP0399662B1/en not_active Expired - Lifetime
- 1990-04-25 ES ES90304436T patent/ES2074536T3/es not_active Expired - Lifetime
- 1990-04-25 DE DE69020802T patent/DE69020802T2/de not_active Expired - Fee Related
- 1990-05-01 JP JP2111889A patent/JPH0750691B2/ja not_active Expired - Lifetime
- 1990-05-01 KR KR1019900006294A patent/KR950014610B1/ko not_active IP Right Cessation
-
1996
- 1996-06-06 HK HK100596A patent/HK100596A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0399662B1 (en) | 1995-07-12 |
US5011794A (en) | 1991-04-30 |
EP0399662A3 (en) | 1992-03-04 |
JPH02303121A (ja) | 1990-12-17 |
KR900019149A (ko) | 1990-12-24 |
KR950014610B1 (ko) | 1995-12-11 |
CA2015411C (en) | 1994-03-15 |
DE69020802T2 (de) | 1995-12-07 |
HK100596A (en) | 1996-06-14 |
JPH0750691B2 (ja) | 1995-05-31 |
DE69020802D1 (de) | 1995-08-17 |
CA2015411A1 (en) | 1990-11-01 |
EP0399662A2 (en) | 1990-11-28 |
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