AU2001252071A1 - A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures - Google Patents
A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structuresInfo
- Publication number
- AU2001252071A1 AU2001252071A1 AU2001252071A AU5207101A AU2001252071A1 AU 2001252071 A1 AU2001252071 A1 AU 2001252071A1 AU 2001252071 A AU2001252071 A AU 2001252071A AU 5207101 A AU5207101 A AU 5207101A AU 2001252071 A1 AU2001252071 A1 AU 2001252071A1
- Authority
- AU
- Australia
- Prior art keywords
- ingaasp
- quantum well
- gallium arsenide
- indium gallium
- bandgap energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2072—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by vacancy induced diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
- H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/929—PN junction isolated integrated circuit with isolation walls having minimum dopant concentration at intermediate depth in epitaxial layer, e.g. diffused from both surfaces of epitaxial layer
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20526100P | 2000-05-19 | 2000-05-19 | |
US60205261 | 2000-05-19 | ||
PCT/CA2001/000523 WO2001088993A2 (en) | 2000-05-19 | 2001-04-09 | A METHOD FOR LOCALLY MODIFYING THE EFFECTIVE BANDGAP ENERGY IN INDIUM GALLIUM ARSENIDE PHOSPHIDE (InGaAsP) QUANTUM WELL STRUCTURES |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001252071A1 true AU2001252071A1 (en) | 2001-11-26 |
Family
ID=22761486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001252071A Abandoned AU2001252071A1 (en) | 2000-05-19 | 2001-04-09 | A method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (ingaasp) quantum well structures |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020030185A1 (en) |
AU (1) | AU2001252071A1 (en) |
CA (1) | CA2343694A1 (en) |
WO (1) | WO2001088993A2 (en) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US6878562B2 (en) * | 2000-10-20 | 2005-04-12 | Phosistor Technologies, Incorporated | Method for shifting the bandgap energy of a quantum well layer |
GB2372148A (en) * | 2001-01-23 | 2002-08-14 | Univ Glasgow | A Method of Manufacturing an Optical Device |
US6984538B2 (en) * | 2001-07-26 | 2006-01-10 | Phosistor Technologies, Inc. | Method for quantum well intermixing using pre-annealing enhanced defects diffusion |
US9372306B1 (en) | 2001-10-09 | 2016-06-21 | Infinera Corporation | Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
US6888666B1 (en) * | 2001-11-16 | 2005-05-03 | Dakota Investment Group, Inc. | Dynamically reconfigurable optical amplification element |
US6594295B1 (en) * | 2001-11-16 | 2003-07-15 | Fox-Tek, Inc. | Semiconductor laser with disordered and non-disordered quantum well regions |
GB0206226D0 (en) * | 2002-03-16 | 2002-05-01 | Intense Photonics Ltd | Electro-absorption modulator with broad optical bandwidth |
GB2387481B (en) * | 2002-04-10 | 2005-08-31 | Intense Photonics Ltd | Integrated active photonic device and photodetector |
US7035305B2 (en) * | 2002-05-10 | 2006-04-25 | Bookham Technology, Plc | Monolithically integrated high power laser optical device |
US10012797B1 (en) | 2002-10-08 | 2018-07-03 | Infinera Corporation | Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
GB0225586D0 (en) * | 2002-11-02 | 2002-12-11 | Intense Photonics Ltd | Quantum well intermixing in semiconductor photonic devices |
US7233709B2 (en) * | 2003-11-04 | 2007-06-19 | Avago Technologies Fiber Ip (Singapore) Ltd. Pte. | Electro-absorption modulator |
US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
US20060227825A1 (en) * | 2005-04-07 | 2006-10-12 | Nl-Nanosemiconductor Gmbh | Mode-locked quantum dot laser with controllable gain properties by multiple stacking |
US7835408B2 (en) * | 2005-12-07 | 2010-11-16 | Innolume Gmbh | Optical transmission system |
US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
JP2009518833A (en) | 2005-12-07 | 2009-05-07 | インノルメ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Laser light source with broadband spectral emission |
WO2008069872A2 (en) * | 2006-10-24 | 2008-06-12 | Lev Deych | Multiple-quantum-well structure with electric field control |
WO2010065731A2 (en) * | 2008-12-03 | 2010-06-10 | Innolume Gmbh | Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser |
CN104254951B (en) | 2013-02-19 | 2018-06-05 | 索尔思光电(成都)有限公司 | Suitable for modulating the variable frequency range gap modulation device of Optical Maser System |
US9819144B2 (en) | 2015-05-14 | 2017-11-14 | Apple Inc. | High-efficiency vertical emitters with improved heat sinking |
US10034375B2 (en) | 2015-05-21 | 2018-07-24 | Apple Inc. | Circuit substrate with embedded heat sink |
US9735539B2 (en) * | 2015-07-20 | 2017-08-15 | Apple Inc. | VCSEL structure with embedded heat sink |
US10881028B1 (en) | 2019-07-03 | 2020-12-29 | Apple Inc. | Efficient heat removal from electronic modules |
US11710945B2 (en) | 2020-05-25 | 2023-07-25 | Apple Inc. | Projection of patterned and flood illumination |
US11699715B1 (en) | 2020-09-06 | 2023-07-11 | Apple Inc. | Flip-chip mounting of optoelectronic chips |
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US4871690A (en) | 1986-01-21 | 1989-10-03 | Xerox Corporation | Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects |
EP0261262B1 (en) | 1986-09-23 | 1992-06-17 | International Business Machines Corporation | Transverse junction stripe laser |
US5411914A (en) * | 1988-02-19 | 1995-05-02 | Massachusetts Institute Of Technology | III-V based integrated circuits having low temperature growth buffer or passivation layers |
US5011794A (en) * | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
FR2688637B1 (en) * | 1991-03-13 | 1998-08-28 | France Telecom | SURFACE EMITTING POWER LASER AND MANUFACTURING METHOD THEREOF. |
US5353295A (en) | 1992-08-10 | 1994-10-04 | The Board Of Trustees Of The University Of Illinois | Semiconductor laser device with coupled cavities |
US5384797A (en) * | 1992-09-21 | 1995-01-24 | Sdl, Inc. | Monolithic multi-wavelength laser diode array |
US5298454A (en) | 1992-10-30 | 1994-03-29 | At&T Bell Laboratories | Method for making self-electro-optical device and devices made thereby |
JPH0794833A (en) | 1993-09-22 | 1995-04-07 | Mitsubishi Electric Corp | Semiconductor laser and its manufacturing method |
US5603765A (en) * | 1993-12-01 | 1997-02-18 | Hughes Aircraft Company | Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy |
US5395793A (en) | 1993-12-23 | 1995-03-07 | National Research Council Of Canada | Method of bandgap tuning of semiconductor quantum well structures |
US5455429A (en) | 1993-12-29 | 1995-10-03 | Xerox Corporation | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material |
FR2718576B1 (en) | 1994-04-06 | 1996-04-26 | Alcatel Nv | Wavelength shifting method in a semiconductor quantum well structure. |
JPH0878786A (en) * | 1994-09-02 | 1996-03-22 | Mitsubishi Electric Corp | Strained quantum well structure |
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US5766981A (en) | 1995-01-04 | 1998-06-16 | Xerox Corporation | Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD |
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US5608753A (en) | 1995-06-29 | 1997-03-04 | Xerox Corporation | Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material |
US5574745A (en) | 1995-06-29 | 1996-11-12 | Xerox Corporation | Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material |
US5771256A (en) | 1996-06-03 | 1998-06-23 | Bell Communications Research, Inc. | InP-based lasers with reduced blue shifts |
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US5915165A (en) | 1997-12-15 | 1999-06-22 | Xerox Corporation | Method of manufacturing vertical cavity surface emitting semiconductor lasers using intermixing and oxidation |
US6459716B1 (en) * | 2001-02-01 | 2002-10-01 | Nova Crystals, Inc. | Integrated surface-emitting laser and modulator device |
-
2001
- 2001-04-09 AU AU2001252071A patent/AU2001252071A1/en not_active Abandoned
- 2001-04-09 WO PCT/CA2001/000523 patent/WO2001088993A2/en active Application Filing
- 2001-04-11 CA CA002343694A patent/CA2343694A1/en not_active Abandoned
- 2001-04-12 US US09/833,078 patent/US20020030185A1/en not_active Abandoned
-
2002
- 2002-05-09 US US10/140,824 patent/US6611007B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020030185A1 (en) | 2002-03-14 |
CA2343694A1 (en) | 2001-11-19 |
US20020127752A1 (en) | 2002-09-12 |
US6611007B2 (en) | 2003-08-26 |
WO2001088993A3 (en) | 2002-02-28 |
WO2001088993A2 (en) | 2001-11-22 |
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