AU2002216181A1 - Method for producing a positively doped semiconductor with large forbidden band - Google Patents

Method for producing a positively doped semiconductor with large forbidden band

Info

Publication number
AU2002216181A1
AU2002216181A1 AU2002216181A AU1618102A AU2002216181A1 AU 2002216181 A1 AU2002216181 A1 AU 2002216181A1 AU 2002216181 A AU2002216181 A AU 2002216181A AU 1618102 A AU1618102 A AU 1618102A AU 2002216181 A1 AU2002216181 A1 AU 2002216181A1
Authority
AU
Australia
Prior art keywords
producing
doped semiconductor
forbidden band
positively doped
large forbidden
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002216181A
Inventor
Ferechteh Hosseini Teherani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2002216181A1 publication Critical patent/AU2002216181A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
AU2002216181A 2000-12-07 2001-12-05 Method for producing a positively doped semiconductor with large forbidden band Abandoned AU2002216181A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0015900 2000-12-07
FR0015900A FR2818009B1 (en) 2000-12-07 2000-12-07 PROCESS FOR PRODUCING A PROHIBITED BROADBAND SEMICONDUCTOR
PCT/FR2001/003843 WO2002047147A1 (en) 2000-12-07 2001-12-05 Method for producing a positively doped semiconductor with large forbidden band

Publications (1)

Publication Number Publication Date
AU2002216181A1 true AU2002216181A1 (en) 2002-06-18

Family

ID=8857355

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002216181A Abandoned AU2002216181A1 (en) 2000-12-07 2001-12-05 Method for producing a positively doped semiconductor with large forbidden band

Country Status (6)

Country Link
US (1) US7094288B2 (en)
EP (1) EP1342261B1 (en)
JP (1) JP4772271B2 (en)
AU (1) AU2002216181A1 (en)
FR (1) FR2818009B1 (en)
WO (1) WO2002047147A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1388597B1 (en) * 2001-04-04 2013-02-13 Nippon Mining & Metals Co., Ltd. METHOD FOR MANUFACTURING n-type ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ON A ZNTE SUBSTRATE AND SEMICONDUCTOR DEVICE
US7227196B2 (en) * 2003-05-20 2007-06-05 Burgener Ii Robert H Group II-VI semiconductor devices
US7172813B2 (en) * 2003-05-20 2007-02-06 Burgener Ii Robert H Zinc oxide crystal growth substrate
US7161173B2 (en) * 2003-05-20 2007-01-09 Burgener Ii Robert H P-type group II-VI semiconductor compounds
US7141489B2 (en) * 2003-05-20 2006-11-28 Burgener Ii Robert H Fabrication of p-type group II-VI semiconductors
US7691353B2 (en) * 2004-06-17 2010-04-06 Burgener Ii Robert H Low dielectric constant group II-VI insulator
KR20080037716A (en) * 2005-08-18 2008-04-30 고꾸리쯔다이가꾸호오징 야마나시다이가꾸 Process for producing zinc oxide thin-film and production apparatus
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5399640B2 (en) * 2008-03-06 2014-01-29 スタンレー電気株式会社 Manufacturing method of ZnO-based semiconductor device
KR101687491B1 (en) * 2015-07-16 2016-12-16 한국과학기술원 Ultrafast formation and transfer of organic and inorganic thin-films utilizing spontaneous spreading effect

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6291085B1 (en) * 1998-08-03 2001-09-18 The Curators Of The University Of Missouri Zinc oxide films containing P-type dopant and process for preparing same
WO2000022202A1 (en) * 1998-10-09 2000-04-20 Rohm Co., Ltd. p-TYPE ZnO SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME

Also Published As

Publication number Publication date
JP2004515919A (en) 2004-05-27
WO2002047147A1 (en) 2002-06-13
EP1342261B1 (en) 2020-03-04
JP4772271B2 (en) 2011-09-14
FR2818009A1 (en) 2002-06-14
US7094288B2 (en) 2006-08-22
EP1342261A1 (en) 2003-09-10
US20030226499A1 (en) 2003-12-11
FR2818009B1 (en) 2003-03-28

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