ES2002851A6 - Circuito integrado protector - Google Patents

Circuito integrado protector

Info

Publication number
ES2002851A6
ES2002851A6 ES8602596A ES8602596A ES2002851A6 ES 2002851 A6 ES2002851 A6 ES 2002851A6 ES 8602596 A ES8602596 A ES 8602596A ES 8602596 A ES8602596 A ES 8602596A ES 2002851 A6 ES2002851 A6 ES 2002851A6
Authority
ES
Spain
Prior art keywords
metal gate
protection
integrated circuits
electrostatic discharge
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES8602596A
Other languages
English (en)
Inventor
Mark Steven Strauss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of ES2002851A6 publication Critical patent/ES2002851A6/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

LOS CIRCUITOS INTEGRADOS REALIZADOS CON LA TECNOLOGIA DE PUERTA AISLADA (V.G., CMOS) SE HAN PROTEGIDO CONTRA LA DESCARGA ELECTROSTATICA (ESD) MEDIANTE UN TRANSISTOR DE EFECTO DE CAMPO DE PUERTA METALICA. SORPRENDENTEMENTE, SE OBTIENE UNA PROTECCION SUPERIOR OMITIENDO LA PUERTA METALICA, BASANDOSE DE ESTE MODO TAN SOLO EN LA DESCARGA EN ALUD DEL DISPOSITIVO BIPOLAR PARA LA PROTECCION DE POLARIDAD OPUESTA. SE POSTULA QUE EL EFECTO DE CAMPO DEL DISPOSITIVO DE PUERTA METALICA RESTRINGE INDESEABLEMENTE EL FLUJO DE CORRIENTE EN EL DISPOSITIVO DE LA TECNOLOGIA ANTERIOR. LA TECNICA DE LA INVENCION SE PUEDE REALIZAR CONVENIENTEMENTE EMPLEANDO UN DIODO EN LUGAR DE UN TRANSISTOR COMO ELEMENTO PROTECTOR.
ES8602596A 1985-10-15 1986-10-14 Circuito integrado protector Expired ES2002851A6 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78776485A 1985-10-15 1985-10-15

Publications (1)

Publication Number Publication Date
ES2002851A6 true ES2002851A6 (es) 1988-10-01

Family

ID=25142455

Family Applications (1)

Application Number Title Priority Date Filing Date
ES8602596A Expired ES2002851A6 (es) 1985-10-15 1986-10-14 Circuito integrado protector

Country Status (8)

Country Link
US (1) US4821089A (es)
EP (1) EP0242383B1 (es)
JP (1) JPH0828426B2 (es)
KR (1) KR900004727B1 (es)
CA (1) CA1253631A (es)
DE (1) DE3681160D1 (es)
ES (1) ES2002851A6 (es)
WO (1) WO1987002511A1 (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
FR2623018B1 (fr) * 1987-11-06 1990-02-09 Thomson Semiconducteurs Circuit integre protege contre les decharges electrostatiques avec seuil de protection variable
USRE37477E1 (en) * 1987-11-06 2001-12-18 Sgs-Thomson Microelectronics, Inc. Integrated circuit protected against electrostatic discharges, with variable protection threshold
US5182621A (en) * 1988-06-14 1993-01-26 Nec Corporation Input protection circuit for analog/digital converting semiconductor
JP2513010B2 (ja) * 1988-12-27 1996-07-03 日本電気株式会社 半導体集積回路の入力保護装置
US5124877A (en) * 1989-07-18 1992-06-23 Gazelle Microcircuits, Inc. Structure for providing electrostatic discharge protection
US5304839A (en) * 1990-12-04 1994-04-19 At&T Bell Laboratories Bipolar ESD protection for integrated circuits
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
EP0517391A1 (en) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD protection circuit
US5264723A (en) * 1992-04-09 1993-11-23 At&T Bell Laboratories Integrated circuit with MOS capacitor for improved ESD protection
US5838033A (en) * 1993-09-08 1998-11-17 Lucent Technologies Inc. Integrated circuit with gate conductor defined resistor
JPH07176693A (ja) * 1993-12-17 1995-07-14 Fujitsu Ltd 入力保護回路
JP2643904B2 (ja) * 1995-04-20 1997-08-25 日本電気株式会社 静電保護素子
US5773338A (en) * 1995-11-21 1998-06-30 Lucent Technologies Inc. Bipolar transistor with MOS-controlled protection for reverse-biased emitter-based junction
KR100449180B1 (ko) * 1997-12-31 2005-01-05 주식회사 하이닉스반도체 반도체소자의정전기방지회로용트랜지스터구조
US7251250B2 (en) * 2000-02-08 2007-07-31 Cingular Wireless Ii, Llc Method and apparatus for efficient sharing of communication system resources
US6489232B1 (en) * 2000-05-31 2002-12-03 Agere Systems, Inc. ESD resistant device
US6426263B1 (en) 2000-08-11 2002-07-30 Agere Systems Guardian Corp. Method for making a merged contact window in a transistor to electrically connect the gate to either the source or the drain
US6724601B2 (en) 2001-03-16 2004-04-20 Integrated Device Technology, Inc. ESD protection circuit
US7329926B2 (en) * 2003-04-01 2008-02-12 Agere Systems Inc. Semiconductor device with constricted current passage

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1209271A (en) * 1967-02-27 1970-10-21 Hitachi Ltd Improvements in semiconductor devices
US3555374A (en) * 1967-03-03 1971-01-12 Hitachi Ltd Field effect semiconductor device having a protective diode
US3673427A (en) * 1970-02-02 1972-06-27 Electronic Arrays Input circuit structure for mos integrated circuits
US3676742A (en) * 1971-05-24 1972-07-11 Signetics Corp Means including a spark gap for protecting an integrated circuit from electrical discharge
DE2531846C2 (de) * 1974-07-16 1989-12-14 Nippon Electric Co., Ltd., Tokyo Schutzschaltungsanordnung für einen Isolierschicht-Feldeffekttransistor
FR2289051A1 (fr) * 1974-10-22 1976-05-21 Ibm Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions
US4295176A (en) * 1979-09-04 1981-10-13 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit protection arrangement
JPS57164571A (en) * 1981-04-02 1982-10-09 Mitsubishi Electric Corp Semiconductro integrated circuit device
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
JPS58202573A (ja) * 1982-05-21 1983-11-25 Fujitsu Ltd 半導体集積回路装置
JPS6074677A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 複合型サイリスタ
JPS61237472A (ja) * 1985-04-15 1986-10-22 Nec Corp 半導体装置
JPH05263075A (ja) * 1992-03-17 1993-10-12 Toshiba Corp 熱蛍光体

Also Published As

Publication number Publication date
EP0242383A1 (en) 1987-10-28
JPS63501112A (ja) 1988-04-21
KR900004727B1 (en) 1990-07-05
KR880700466A (ko) 1988-03-15
EP0242383B1 (en) 1991-08-28
JPH0828426B2 (ja) 1996-03-21
DE3681160D1 (de) 1991-10-02
WO1987002511A1 (en) 1987-04-23
US4821089A (en) 1989-04-11
CA1253631A (en) 1989-05-02

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Legal Events

Date Code Title Description
SA6 Expiration date (snapshot 920101)

Free format text: 2006-10-14