HK125795A - Overvoltage protection circuit for mos components - Google Patents

Overvoltage protection circuit for mos components

Info

Publication number
HK125795A
HK125795A HK125795A HK125795A HK125795A HK 125795 A HK125795 A HK 125795A HK 125795 A HK125795 A HK 125795A HK 125795 A HK125795 A HK 125795A HK 125795 A HK125795 A HK 125795A
Authority
HK
Hong Kong
Prior art keywords
protection circuit
overvoltage protection
oxide transistor
mos components
mos
Prior art date
Application number
HK125795A
Inventor
Hartmud Terletzki
Lothar Dr Risch
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of HK125795A publication Critical patent/HK125795A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention relates to an overvoltage protection circuit for MOS components consisting of a resistor (R), a field oxide transistor (FOX) and a thin oxide transistor (DOX). The breakdown of the parasitic dipole transistor inside the field oxide transistor is optimised so that the latter can with certainty leak off all the energy of an overvoltage pulse against the reference potential (VSS?). The measures described reduce the thermal damage known as 'spiking' which can cause the MOS component to break down.
HK125795A 1989-03-08 1995-08-03 Overvoltage protection circuit for mos components HK125795A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE3907523A DE3907523A1 (en) 1989-03-08 1989-03-08 PROTECTIVE CIRCUIT AGAINST OVERVOLTAGE FOR MOS COMPONENTS

Publications (1)

Publication Number Publication Date
HK125795A true HK125795A (en) 1995-08-11

Family

ID=6375854

Family Applications (1)

Application Number Title Priority Date Filing Date
HK125795A HK125795A (en) 1989-03-08 1995-08-03 Overvoltage protection circuit for mos components

Country Status (7)

Country Link
EP (1) EP0462108B1 (en)
JP (1) JP2797259B2 (en)
KR (1) KR0165897B1 (en)
AT (1) ATE103417T1 (en)
DE (2) DE3907523A1 (en)
HK (1) HK125795A (en)
WO (1) WO1990010952A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4118441A1 (en) * 1991-06-05 1992-12-10 Siemens Ag CIRCUIT ARRANGEMENT TO PROTECT AGAINST OVERVOLTAGE ON INPUTS OF INTEGRATED MOS CIRCUITS
DE69231494T2 (en) * 1991-12-27 2001-05-10 Texas Instruments Inc ESD protection device
EP0623958B1 (en) * 1993-05-04 1998-04-01 Siemens Aktiengesellschaft Semi-conductor integrated circuit including protection means
GB2336241B (en) * 1998-01-15 2000-06-14 United Microelectronics Corp Substrate-triggering electrostatic dicharge protection circuit for deep-submicron integrated circuits

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs

Also Published As

Publication number Publication date
KR920702025A (en) 1992-08-12
WO1990010952A1 (en) 1990-09-20
KR0165897B1 (en) 1998-12-15
JP2797259B2 (en) 1998-09-17
EP0462108B1 (en) 1994-03-23
ATE103417T1 (en) 1994-04-15
JPH04504030A (en) 1992-07-16
DE59005132D1 (en) 1994-04-28
EP0462108A1 (en) 1991-12-27
DE3907523A1 (en) 1990-09-20

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20040118

PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)