EP3776641C0 - Verfahren zum transfer einer piezoelektrischen schicht auf ein trägersubstrat - Google Patents

Verfahren zum transfer einer piezoelektrischen schicht auf ein trägersubstrat

Info

Publication number
EP3776641C0
EP3776641C0 EP19718438.5A EP19718438A EP3776641C0 EP 3776641 C0 EP3776641 C0 EP 3776641C0 EP 19718438 A EP19718438 A EP 19718438A EP 3776641 C0 EP3776641 C0 EP 3776641C0
Authority
EP
European Patent Office
Prior art keywords
transferring
piezoelectric layer
supporting substrate
layer onto
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP19718438.5A
Other languages
English (en)
French (fr)
Other versions
EP3776641B1 (de
EP3776641A1 (de
Inventor
Djamel Belhachemi
Thierry Barge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of EP3776641A1 publication Critical patent/EP3776641A1/de
Application granted granted Critical
Publication of EP3776641B1 publication Critical patent/EP3776641B1/de
Publication of EP3776641C0 publication Critical patent/EP3776641C0/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
EP19718438.5A 2018-03-26 2019-03-21 Verfahren zum transfer einer piezoelektrischen schicht auf ein trägersubstrat Active EP3776641B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852573A FR3079346B1 (fr) 2018-03-26 2018-03-26 Procede de fabrication d'un substrat donneur pour le transfert d'une couche piezoelectrique, et procede de transfert d'une telle couche piezoelectrique
PCT/FR2019/050645 WO2019186032A1 (fr) 2018-03-26 2019-03-21 Procede de transfert d'une couche piezoelectrique sur un substrat support

Publications (3)

Publication Number Publication Date
EP3776641A1 EP3776641A1 (de) 2021-02-17
EP3776641B1 EP3776641B1 (de) 2024-05-15
EP3776641C0 true EP3776641C0 (de) 2024-05-15

Family

ID=62816717

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19718438.5A Active EP3776641B1 (de) 2018-03-26 2019-03-21 Verfahren zum transfer einer piezoelektrischen schicht auf ein trägersubstrat

Country Status (8)

Country Link
US (2) US12167694B2 (de)
EP (1) EP3776641B1 (de)
JP (1) JP7256204B2 (de)
KR (1) KR102671192B1 (de)
CN (1) CN111919290B (de)
FR (1) FR3079346B1 (de)
SG (1) SG11202009335RA (de)
WO (1) WO2019186032A1 (de)

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US12081188B2 (en) 2018-10-16 2024-09-03 Skyworks Solutions, Inc. Acoustic wave devices
FR3108789B1 (fr) * 2020-03-24 2023-12-08 Soitec Silicon On Insulator Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique
FR3108788B1 (fr) * 2020-03-24 2026-01-23 Soitec Silicon On Insulator Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique
FR3120985B1 (fr) * 2021-03-19 2023-03-31 Soitec Silicon On Insulator Procédé de fabrication d’une hétérostructure
CN113394338A (zh) * 2021-04-28 2021-09-14 上海新硅聚合半导体有限公司 一种异质单晶薄膜的制备方法及异质单晶薄膜
FR3131436B1 (fr) * 2021-12-23 2025-04-25 Soitec Silicon On Insulator Procede de fabrication d’un substrat donneur
FR3131979B1 (fr) 2022-01-17 2025-03-21 Soitec Silicon On Insulator Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
FR3131980B1 (fr) 2022-01-17 2024-01-12 Soitec Silicon On Insulator Procédé de fabrication d’un substrat donneur pour le transfert d’une couche piézoélectrique et procédé de transfert d’une couche piézoélectrique sur un substrat support
US20260040907A1 (en) 2022-07-19 2026-02-05 Soitec Method for manufacturing a support substrate for a radiofrequency application
FR3138239B1 (fr) 2022-07-19 2024-06-21 Soitec Silicon On Insulator Procédé de fabrication d’un substrat support pour application radiofréquences
WO2024051945A1 (en) * 2022-09-08 2024-03-14 Huawei Technologies Co., Ltd. Surface acoustic wave device, and radio frequency filter and multiplexer comprising the same
FR3140474B1 (fr) 2022-09-30 2024-11-01 Soitec Silicon On Insulator Substrat donneur et Procédé de fabrication d’un substrat donneur pour être utilisé dans un procédé de transfert de couche mince piézoélectrique.
FR3159877B1 (fr) * 2024-03-04 2026-02-20 Soitec Silicon On Insulator Procédé de fabrication d'un substrat, et substrat
FR3160295B1 (fr) 2024-03-14 2026-03-06 Soitec Silicon On Insulator Hétérostructure comprenant une portion exposée rugueuse d’un substrat de support
FR3160509B1 (fr) 2024-03-22 2026-03-20 Soitec Silicon On Insulator Procédé de fabrication d’une couche ferroélectrique reportée sur un substrat et de polarisation à homogénéité améliorée
FR3160477B1 (fr) 2024-03-22 2026-03-20 Soitec Silicon On Insulator Procédé de fabrication d’une couche ferroélectrique reportée sur un substrat et de polarisation à homogénéité améliorée
FR3162098A1 (fr) 2024-05-11 2025-11-14 Soitec Procédé de fabrication ou détermination d’un substrat multicouche pour un dispositif à ondes élastiques
FR3162103A1 (fr) 2024-05-11 2025-11-14 Soitec Structure multicouche pour un dispositif à onde élastique
FR3162101A1 (fr) 2024-05-11 2025-11-14 Soitec Structure multicouche pour un dispositif à ondes élastiques
FR3162100A1 (fr) 2024-05-11 2025-11-14 Soitec Structure multicouche pour un dispositif à ondes élastiques
FR3162102A1 (fr) 2024-05-11 2025-11-14 Soitec Structure multicouche pour un dispositif à onde élastique
FR3162099A1 (fr) 2024-05-11 2025-11-14 Soitec Structure multicouche pour un dispositif à onde élastique
FR3162019A1 (fr) 2024-05-13 2025-11-14 Soitec Structure multicouche pour un dispositif à ondes élastiques
FR3164874A1 (fr) * 2024-07-19 2026-01-23 Soitec Procédé de préparation d’un substrat comprenant une couche mince en matériau piézoélectrique reportée sur un support

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Also Published As

Publication number Publication date
FR3079346B1 (fr) 2020-05-29
FR3079346A1 (fr) 2019-09-27
US20210020826A1 (en) 2021-01-21
KR102671192B1 (ko) 2024-05-31
SG11202009335RA (en) 2020-10-29
CN111919290A (zh) 2020-11-10
CN111919290B (zh) 2024-03-01
US12167694B2 (en) 2024-12-10
WO2019186032A1 (fr) 2019-10-03
KR20200135411A (ko) 2020-12-02
EP3776641B1 (de) 2024-05-15
JP2021519536A (ja) 2021-08-10
EP3776641A1 (de) 2021-02-17
JP7256204B2 (ja) 2023-04-11
US20250081852A1 (en) 2025-03-06

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