EP3697866B1 - Ätzzusammensetzungen - Google Patents

Ätzzusammensetzungen Download PDF

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Publication number
EP3697866B1
EP3697866B1 EP18868893.1A EP18868893A EP3697866B1 EP 3697866 B1 EP3697866 B1 EP 3697866B1 EP 18868893 A EP18868893 A EP 18868893A EP 3697866 B1 EP3697866 B1 EP 3697866B1
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EP
European Patent Office
Prior art keywords
composition
acid
tan
amount
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP18868893.1A
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English (en)
French (fr)
Other versions
EP3697866A4 (de
EP3697866A1 (de
Inventor
Atsushi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Electronic Materials USA Inc
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Fujifilm Electronic Materials USA Inc
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Application filed by Fujifilm Electronic Materials USA Inc filed Critical Fujifilm Electronic Materials USA Inc
Publication of EP3697866A1 publication Critical patent/EP3697866A1/de
Publication of EP3697866A4 publication Critical patent/EP3697866A4/de
Application granted granted Critical
Publication of EP3697866B1 publication Critical patent/EP3697866B1/de
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Claims (14)

  1. Ätzzusammensetzung, umfassend:
    a) Fluorwasserstoffsäure;
    b) wenigstens eine Carbonsäure als ein erstes Lösungsmittel,
    wobei die wenigstens eine Carbonsäure ausgewählt ist aus Ameisensäure, Essigsäure, Trifluoressigsäure, Propionsäure, Buttersäure, Valeriansäure und Capronsäure und in einer Menge von 85 Gew.-% bis 99 Gew.-% der Zusammensetzung vorhanden ist;
    c) wenigstens ein Oxidationsmittel; und
    d) wenigstens einen Komplexbildner ausgewählt aus der Gruppe bestehend aus Polycarbonsäuren und Hydroxycarbonsäuren.
  2. Zusammensetzung gemäß Anspruch 1, wobei die Fluorwasserstoffsäure in einer Menge von etwa 0,1 Gew.-% bis etwa 5 Gew.-% der Zusammensetzung vorhanden ist.
  3. Zusammensetzung gemäß einem der Ansprüche 1-2, wobei die wenigstens eine Carbonsäure in einer Menge von etwa 85 Gew.-% bis etwa 98 Gew.-% der Zusammensetzung vorhanden ist.
  4. Zusammensetzung gemäß einem der Ansprüche 1-3, wobei das wenigstens eine Oxidationsmittel Salpetersäure, KMnO4, H2O2, H5IO5 oder NaClO4 umfasst und/oder wobei das wenigstens eine Oxidationsmittel in einer Menge von etwa 0,01 Gew.-% bis etwa 0,5 Gew.-% der Zusammensetzung vorhanden ist.
  5. Zusammensetzung gemäß einem der Ansprüche 1-4, wobei der wenigstens eine Komplexbildner Oxalsäure, Citronensäure oder 2-Hydroxybenzoesäure umfasst und/oder wobei der wenigstens eine Komplexbildner in einer Menge von etwa 0,1 Gew.-% bis etwa 10 Gew.-% der Zusammensetzung vorhanden ist.
  6. Zusammensetzung gemäß einem der Ansprüche 1-5, ferner umfassend wenigstens eine Hexafluorsilicatverbindung, wobei die wenigstens eine Hexafluorsilicatverbindung gegebenenfalls H2SiF6, Na2SiF6, K2SiF6 oder (NH4)2SiF6 umfasst, wobei die wenigstens eine Hexafluorsilicatverbindung ferner gegebenenfalls in einer Menge von etwa 0,1 Gew.-% bis etwa 5 Gew.-% der Zusammensetzung vorhanden ist.
  7. Zusammensetzung gemäß einem der Ansprüche 1-6, ferner umfassend wenigstens eine Sulfonsäure, wobei die wenigstens eine Sulfonsäure gegebenenfalls p-Toluolsulfonsäure, Methansulfonsäure oder Dodecylbenzolsulfonsäure umfasst, wobei die wenigstens eine Sulfonsäure ferner gegebenenfalls in einer Menge von etwa 0,1 Gew.-% bis etwa 10 Gew.-% der Zusammensetzung vorhanden ist.
  8. Zusammensetzung gemäß einem der Ansprüche 1-7, ferner umfassend wenigstens ein zweites Lösungsmittel ausgewählt aus der Gruppe bestehend aus organischen Lösungsmitteln und anorganischen Lösungsmitteln, wobei das zweite Lösungsmittel in einer Menge von etwa 0,01 Gew.-% bis etwa 10 Gew.-% der Zusammensetzung vorhanden ist, wobei das wenigstens eine zweite Lösungsmittel gegebenenfalls Wasser umfasst.
  9. Zusammensetzung gemäß Anspruch 8, wobei das wenigstens eine zweite Lösungsmittel ein organisches Lösungsmittel mit einem Partitionskoeffizienten (logP) von größer als 0 umfasst, wobei der Partitionskoeffizient in einem zweiphasigen System von n-Octanol und Wasser erhalten ist, wobei das organische Lösungsmittel gegebenenfalls einen Alkohol oder einen Ether umfasst, wobei das organische Lösungsmittel ferner gegebenenfalls Benzylalkohol, Diethylenglycolbutylether, Diethylenglycoldimethylether, Diethylenglycoldiethylether, Dipropylenglycoldiethylether, Tetraethylenglycoldimethylether oder Dipropylenglycoldimethylether umfasst und/oder wobei das organische Lösungsmittel in einer Menge von etwa 0,1 Gew.-% bis etwa 20 Gew.-% der Zusammensetzung vorhanden ist.
  10. Zusammensetzung gemäß einem der Ansprüche 1-9, ferner umfassend wenigstens ein Tensid, wobei das wenigstens eine Tensid gegebenenfalls ein nichtionisches Tensid umfasst, wobei das wenigstens eine Tensid ferner gegebenenfalls in einer Menge von etwa 0,0001 Gew.-% bis etwa 1 Gew.-% der Zusammensetzung vorhanden ist.
  11. Zusammensetzung gemäß einem der Ansprüche 1-10, wobei die Zusammensetzung einen pH-Wert von höchstens etwa 1 aufweist.
  12. Verfahren, umfassend:
    Inkontaktbringen eines Halbleitersubstrats, das Ta oder TaN enthält, mit einer Zusammensetzung gemäß einem der Ansprüche 1-11, um das Ta oder TaN zu entfernen.
  13. Verfahren gemäß Anspruch 12, ferner umfassend Spülen des Halbleitersubstrats mit einem Spüllösungsmittel nach dem Schritt des Inkontaktbringens.
  14. Verfahren gemäß Anspruch 13, ferner umfassend Trocknen des Halbleitersubstrats nach dem Schritt des Spülens.
EP18868893.1A 2017-10-19 2018-10-18 Ätzzusammensetzungen Active EP3697866B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762574279P 2017-10-19 2017-10-19
PCT/US2018/056439 WO2019079547A1 (en) 2017-10-19 2018-10-18 ETCHING COMPOSITIONS

Publications (3)

Publication Number Publication Date
EP3697866A1 EP3697866A1 (de) 2020-08-26
EP3697866A4 EP3697866A4 (de) 2020-11-18
EP3697866B1 true EP3697866B1 (de) 2023-09-27

Family

ID=66169758

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18868893.1A Active EP3697866B1 (de) 2017-10-19 2018-10-18 Ätzzusammensetzungen

Country Status (8)

Country Link
US (2) US10889757B2 (de)
EP (1) EP3697866B1 (de)
JP (2) JP2021500748A (de)
KR (1) KR20200073237A (de)
CN (1) CN111225965B (de)
SG (1) SG11202003348YA (de)
TW (1) TWI804519B (de)
WO (1) WO2019079547A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10889757B2 (en) 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
WO2021076676A1 (en) * 2019-10-17 2021-04-22 Versum Materials Us, Llc Etching composition and method for euv mask protective structure
CN111809182A (zh) * 2020-07-08 2020-10-23 江苏和达电子科技有限公司 一种用于铜/钼（铌）/igzo膜层的刻蚀液及其制备方法和应用
CN112795923B (zh) * 2020-12-24 2023-01-24 江苏和达电子科技有限公司 一种铜蚀刻液组合物及其制备方法和应用
US20230112795A1 (en) * 2021-10-12 2023-04-13 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH07286172A (ja) * 1994-04-20 1995-10-31 Asahi Glass Co Ltd エッチング液およびエッチング方法

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Also Published As

Publication number Publication date
CN111225965B (zh) 2021-12-03
JP2023182750A (ja) 2023-12-26
TWI804519B (zh) 2023-06-11
JP2021500748A (ja) 2021-01-07
US20210087467A1 (en) 2021-03-25
US11198816B2 (en) 2021-12-14
EP3697866A4 (de) 2020-11-18
WO2019079547A1 (en) 2019-04-25
KR20200073237A (ko) 2020-06-23
SG11202003348YA (en) 2020-05-28
EP3697866A1 (de) 2020-08-26
US10889757B2 (en) 2021-01-12
CN111225965A (zh) 2020-06-02
TW201923040A (zh) 2019-06-16
US20190119571A1 (en) 2019-04-25

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