EP3586189B1 - Messung einer änderung bei einer geometrischen eigenschaft und / oder position eines werkstücks - Google Patents

Messung einer änderung bei einer geometrischen eigenschaft und / oder position eines werkstücks Download PDF

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Publication number
EP3586189B1
EP3586189B1 EP18757317.5A EP18757317A EP3586189B1 EP 3586189 B1 EP3586189 B1 EP 3586189B1 EP 18757317 A EP18757317 A EP 18757317A EP 3586189 B1 EP3586189 B1 EP 3586189B1
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EP
European Patent Office
Prior art keywords
workpiece
grating
diffraction grating
measurement system
measurement
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English (en)
French (fr)
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EP3586189A4 (de
EP3586189A1 (de
Inventor
Michael B. Binnard
Daniel G. Smith
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Nikon Corp
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Nikon Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/16Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/165Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by means of a grating deformed by the object
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/16Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/161Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by interferometric means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/16Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • G01B11/167Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge by projecting a pattern on the object
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2441Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • G01B9/02097Self-interferometers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1866Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
    • G02B5/1871Transmissive phase gratings
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/30Grating as beam-splitter
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G02B27/425Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application in illumination systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/50Optics for phase object visualisation

Definitions

  • the present invention relates generally to measurements of distortions of a shape of an object and, more particularly, to measurements of sub-nanometer spatial distortions (especially in-plane distortions) of a planar substrate (such as a semiconductor wafer), for example.
  • a first aspect of the present invention is set forth in claim 1.
  • Embodiment(s) of the present invention are devised to implement measurements of the distortions of a workpiece. These distortions can be thought of as combining the two type of deviations of the shape of a workpiece grating from its ideal shape: the deviations occurring in-plane of the workpiece grating, and those occurring out-of the plane of the workpiece grating.
  • implementations of the present embodiment address the problem of detecting an in-plane distortion of a reflective workpiece grating surface that is decoupled from - that is, insensitive to out-of-plane distortion of the workpiece grating surface.
  • the sought-after detection is implemented while minimizing optical noise caused by stray light. Both of these goals are achieved by complementing the exposure tool with an auxiliary "reference grating" (also referred to as an analyzer grating) configured to operate in transmission.
  • the reference grating is disposed between a light source (used for characterization of the distortions of the workpiece grating and the workpiece) and the workpiece grating itself, and is exposed to light incident from such light source. Then upon diffraction of light, transmitted through the reference grating, the workpiece grating is further exposed to beams of light that represent diffraction orders formed at the reference grating.
  • the workpiece grating in response to being illuminated with light diffracted at the reference grating, the workpiece grating forms, in turn, zero-order and first-order diffracted beams directed substantially along a vector perpendicular to the surface of the workpiece grating.
  • the present idea stems from the realization that an optical field distribution formed as a result of interference of these beams diffracted off of the workpiece grating contains encoded information representing the in-plane distortion of the workpiece grating and the workpiece.
  • the measurement system can be used to sequentially measure the distortion of one or more of test workpieces that are sequentially retained by a workpiece chuck. Next, a repeatable portion of workpiece distortion caused by the workpiece chuck can be determined using the measurement system. Subsequently, during the exposure process used to print each actual workpiece, the actual workpiece can be positioned in a fashion to compensate for (and diminish the effects of) at least a portion of the workpiece distortion.
  • a non-exclusive embodiment 100 of the measurement system includes a reference diffraction grating 104 (also referred to as a reference pattern-generator) disposed to be spatially-separated from a target surface 110 of a workpiece 110A to be measured.
  • the target surface 110 includes a workpiece diffraction grating 108 (also referred to as a workpiece pattern-generator) that is secured to, define in, or formed onto the workpiece 110A.
  • the workpiece 110A is retained by a workpiece chuck 111 (e.g. a vacuum or other type of chuck) and the measurement system 110 is used to measure the in-plane deformation caused by the chuck 111.
  • the workpiece 110A is a test workpiece 110A that includes the workpiece diffraction grating 108 formed in the target surface 110, and an opposed surface 110B that is retained by the workpiece chuck 111.
  • the measurement system 100 can be used to sequentially measure the distortion of one or more of test workpieces that are sequentially retained by a workpiece chuck 111. Next, a repeatable portion of workpiece distortion caused by the workpiece chuck 111 can be determined.
  • the production workpiece can be positioned in a fashion to compensate for (and diminish the effects of) at least a portion of the workpiece distortion.
  • the production workpiece exposed with the lithography system does not include the workpiece diffraction grating 108.
  • each grating can include a plurality of gratings. It should also be noted that one or both of the diffraction gratings 104, 108 can be a phase diffraction grating, although other types such as amplitude gratings can be used as well.
  • the reference grating 104 is transmissive and the workpiece grating 108 is reflective.
  • the measurement system 100 includes a light source 102 that generates a beam of light 102A (a measurement beam) that is directed via a beam splitter 102B (e.g. a cube) onto the transmissive reference grating 104 to form diffracted beams 106A, 106B that are further propagating towards the workpiece grating 108 at respectively corresponding angles (shown as ⁇ 1 , - ⁇ 1 ), determined with respect to the direction of incidence (shown with a dashed line 112) as a function of the angle of incidence of light onto the grating 108, the wavelength of light 102A, geometry of the gratings 104, 108, and the separation distance ("gap") "d" between the gratings 104, 108.
  • the wavelength of the light 102A is between approximately 600-700 nanometers and the separation distance is between 10 microns and several millimeters. However, other values are possible.
  • the gratings 104, 108 are substantially parallel to each other (in parallel planes).
  • substantially parallel can mean within at least one milliradian of being parallel.
  • one of the gratings 104, 108 can be fixed.
  • the reference grating 104 can be fixed and the workpiece grating 108 can be moved relative to the reference grating 104.
  • the workpiece grating 108 can be fixed and the reference grating 104 can be moved relative to the workpiece grating 108.
  • the reference grating 104 acts as a first light pattern generator, with optical characteristic (such as transmissivity) that is periodic along a first axis (e.g. the Y axis) and substantially constant along a second axis (e.g. the X axis) that is transverse to the first axis (aka a one dimensional "1D" diffraction grating).
  • optical characteristic such as transmissivity
  • the workpiece grating 108 which is configured to operate in reflection, is judiciously disposed in a Littrow configuration with respect to beams 106A, 106B incident onto the grating 108 such as to form, in reflection, respectively-corresponding diffracted beams 113A, 113B propagating in opposite directions - that is, towards the reference grating 104.
  • the workpiece grating 108 acts as a second light pattern generator, with optical characteristic (such as reflectivity) that is periodic along both a first axis (e.g. the Y axis) and a second axis (e.g. the X axis) that is transverse to the first axis (aka a two dimensional "2D" diffraction grating).
  • the beams 113A, 113B form, in turn, respectively corresponding diffracted beams 114A, 114B, directed to co-propagate towards an optical detection system 115 that includes an optical detector 116.
  • Diffracted beams 114A, 114B interfere at the photosensitive surface of the detector 116 and form a distribution of irradiance that the detector 116 captures.
  • the optical detection system 115 is generally operably connected to a programmable processor 117 that evaluates the data from the detector 116 to determine the in-plane distortion of the target surface 110 of the workpiece 110A. Phrased differently, the distribution of optical irradiance of interest at the optical detector 116 is formed as a result of sequential interaction of the incident beam of light with two diffraction pattern generators (gratings 104, 108).
  • the first pattern-generator (the reference grating 104) has a first optical characteristic that is periodic along a first axis and constant along a second axis (where the first and second axes are transverse to one another), while the second pattern-generator (the workpiece grating 108) has a second optical characteristic that is periodic along both the first and second axes.
  • the reference grating 104 is different from the workpiece grating 108.
  • the reference grating 104 can be a 2D diffraction grating while the workpiece grating 108 is a 1D grating.
  • the pitch of the reference grating 104 is different from the pitch of the workpiece grating 108.
  • the pitch ratio of the gratings 104, 108 is two to one, with the pitch of the reference grating 104 being two times greater than the pitch of the workpiece grating 108.
  • the workpiece diffraction grating 108 has a first period
  • the reference diffraction grating 104 has a second period
  • the second period is substantially twice as big as the first period.
  • pitch ratios are possible.
  • slight deviations from the 2:1 ratio of up to one percent can be tolerated.
  • the beam of light 102A is directed onto the reference grating 104 substantially perpendicularly.
  • the operation of the system 100 with the angle of incidence being oblique (inclined with respect to the normal of the surface of the first pattern generator 104) is intended to be within the scope of the embodiment.
  • the distribution of irradiance on the surface of the detector 116, interferometrically-formed by beams 114A, 114B, is measured multiple times while in a first chosen orientation, and multiple times while in second chosen orientation to assess the shape of the target surface 110 carrying the workpiece grating 108.
  • +1 diffracted beam 114A and the -1 diffracted beam 114B come from different points on the workpiece grating 108 and thus are spaced apart on the detector 116.
  • the +1 diffracted beam 114A and the -1 diffracted beam 114B can be separated several hundred microns on the detector 116.
  • the gratings 104 and 108 disposed in a first chosen orientation (for example, with the ruling or lines of the 1D grating 104 and with a first set of rulings of the 2D grating 108 aligned with the x-axis, as shown).
  • the light beam 102A is directed at the gratings 104, 108 and a first interference image is captured with detector 116.
  • one of the gratings 104, 108 is moved relative to the other grating 108, 104 a phase shift (e.g.
  • This process of stepping the phase shift and capturing an image is repeated a number of times for the first chosen orientation of the gratings 104, 108. For example, this process can be repeated between five and fifty times to capture between five and fifty separate interference pattern images while the gratings 104, 108 are in the first chosen orientation. However, less than five or more than fifty images can be captured depending up the desired resolution.
  • the processor 117 can evaluate the plurality of interference images captured while the gratings 104, 108 are in the first chosen orientation to determine the profile of the target surface 110 in one, initial direction.
  • each phase shift can be 1/8, or 1/6 of the period.
  • other phase shift values are possible.
  • one of the gratings 104 and 108 is being moved relative to the other so that the gratings 104, 108 are disposed in a second chosen orientation (for example, with the ruling or lines of the 1D reference grating 104 and with a second set of rulings of the 2D grating 108 aligned with the Y-axis, as shown).
  • a second chosen orientation for example, with the ruling or lines of the 1D reference grating 104 and with a second set of rulings of the 2D grating 108 aligned with the Y-axis, as shown.
  • one of the gratings 104, 108 is rotated in the plane of the grating with respect to the other of the gratings 104, 108.
  • the second step of the measurement is conducted while the gratings are in the second chosen orientation. For example, if the reference grating 104 is rotated by 90 degrees in plane as compared to its first chosen orientation, the second chosen orientation ruling/lines of the grating
  • the light beam 102A is directed at the gratings 104, 108 and another interference image is captured with detector 116.
  • one of the gratings 104, 108 is moved relative to the other grating 108, 104 the phase shift (e.g. a fraction of the period of the workpiece grating 108), and (ii) the light beam 102A is directed at the gratings 104, 108 and yet another interference image is captured with detector 116.
  • This process of stepping the phase shift and capturing an image is repeated a number of times for the second chosen orientation of the gratings 104, 108. For example, this process can be repeated between five and fifty times to capture between five and fifty separate interference pattern images while the gratings 104, 108 are in the second chosen orientation.
  • the processor 117 can evaluate the plurality of interference images captured while the gratings 104, 108 are in the second chosen orientation to determine the profile of the target surface 110 in the second direction. As a result of the second measurement step, the surface profile and/or shape is determined along another direction that is transverse to the initial direction.
  • the combined results of the first and second measurements allow a skilled person to determine the surface profile and/or shape fully, in the plane defined by both measurement directions.
  • the workpiece 110A is supported by a stage 150 that can be moved by a stage mover 152 to facilitate, for example, loading of the workpiece 110A, alignment of the two gratings 104, 108 to each other, and adjustments along the Z axis to control the spacing, d.
  • the stage mover 152 can be used to move the workpiece and workpiece gratings 108 relative to the reference grating 104 (which can be fixed) each phase shift during each measurement step.
  • the stage mover 152 can rotate the workpiece 110A with the workpiece grating 108 by 90 degrees relative to the reference grating 104 between the first and second measurement steps.
  • a reference mover (not shown) can be used to move the reference grating 104 relative to the workpiece grating 108.
  • the measurement system 100 could include a mover (not shown) for selectively moves the reference grating 104 relative to the workpiece grating 108.
  • a mechanical support unit 154 can support the stage 150, the workpiece 110A and the stage mover 152.
  • the measurement system 100 can include an optical system (not shown), e.g. one or more lenses that direct the light at the detector 116.
  • an optical system e.g. one or more lenses that direct the light at the detector 116.
  • data derived from the detector signal can be used to align the gratings 104, 108 about the Z axis and to ensure that the 90 degree rotation is accurate. For example, if the ratio of bright and dark pixels (i.e., the contrast of the interference pattern) is monitored, the amount of rotation can be adjusted to find the orientation that provides maximum contrast.
  • rotations at angles other than 90 degrees may be used.
  • other multiples of 90 degrees e.g., 270, 450, or 630 degrees
  • the reference grating 104 is a 2D grating and the workpiece grating is a 1D grating.
  • This configuration may be less light-efficient, because the light is diffracted twice by a 2D grating (where it is divided into multiple orders in two dimensions, twice; once at each pass) and only once by a 1D grating, but it may be advantageous for certain applications.
  • Implementations of the present embodiment substantially reduces the complexity of the measurement itself and the number of mathematical operations required to assess the shape of the measured surface, and further improves the measurement performance by reducing the number of possible sources of experimental errors by dealing with and accounting for only two orders of diffraction (formed at the 1D gratings 104) at a time.
  • the proposed method is easily extended to define, with precision and accuracy unparalleled in related art, the change of distortion and/or shape of the surface in question as a function of changing ambient conditions.
  • the same two-step measurement of the target surface can be carried out at a different time and/or under different ambient conditions to obtain a second profile/shape of the surface.
  • the change of the shape is then determined as a result of comparison of the results of the first measurement step with those of the second measurement step.
  • Figs. 2, 3 , and 4 provide illustrations of the empirically-determined difference between the shapes and/or in-plane distortions of the measured surface that occurred between the first measurement (M1, illustrated in Fig. 2 ) and the second measurement (M2, illustrated in Fig. 3 ) of the same surface, carried out under different conditions (either at different times or with different ambient conditions).
  • image 200 represents the distortion of the target surface as determined by combining the plurality of interference pattern images captured at each measurement step when the workpiece was at a first condition.
  • image 300 represents the distortion of the target surface as determined by combining the plurality of interference pattern images captured at each measurement step when the workpiece was at a second condition.
  • image 400 represents the un-averaged difference between images 200 and 300.
  • each of the images 200, 300, and 400 illustrates the shape of the workpiece 110 on a nanometer scale, relative to the reference grating 104.
  • At least one of the type (such as, for example, stretching or compressing, or warpages or tilt) and value (that is, the geometric measure such as length or sag or angle) of the deviation of the spatial profile of the workpiece under test can be determined.
  • the difference 400 between the shapes 200, 300 was determined on a nanometer scale by assessing the interferometric fringes at the surface of the detector with the use of a 7-frame algorithm. For example, a sequence of seven images which were acquired where, in each image, one of the gratings was shifted by an additional 1/8 th of the grating pitch (for a total of 7/8ths of a grating pitch). This phase shifting causes the phase of fringe pattern to change sinusoidally by a known amount, and the initial phase at each pixel can be determined.
  • image 500 is the interferometric fringes captured by the optical detector at one point in time when the light is directed at the gratings.
  • Image 500 illustrates a distribution of an irradiance field on the surface of the optical detector formed as a result of light manipulation with the use of the measurement system 100 of Fig. 1 .
  • the empirically-determined changes in surface profile that occurred between the two different images 200 (M1) ( Figure 2 ) and 300 (M2) ( Figure 3 ) demonstrated the spatial resolution characterized by a ⁇ of about 2.13 nm.
  • FIG. 6 illustrates the results of averaging of the results presented in Fig. 4 performed over an 8-by-8 pixel array (24 micron by 24 micron area of the irradiance distribution on the detector) resulting in an increase of the spatial resolution to that characterized by a ⁇ of about 0.76 nm.
  • the measurement of distortion of the optical shape of the chosen target surface has been demonstrated with a sub-nanometer accuracy.
  • the term "distortion" when used in connection to the shape or spatial profile of a surface of interest is used to refer to the deviation of such shape or spatial profile from a reference and/or predetermined shape or spatial profile.
  • the shape distortion of the 300 mm diameter semiconductor wafer has been measured.
  • gratings 104, 108 are phase shifted with respect to one another.
  • the methods of phase shifting are to translate in x or y (the plane of the gratings) either the workpiece grating 108 or reference grating 104 in steps that are a fraction of the pitch of the gratings. The exact fraction depends on the design of the measurement system 100. In one embodiment, the fraction of the pitch corresponds to a phase shift of the fringe pattern in Figure 5 of a desired amount, typically pi/2.
  • FIG. 8 provides a flow-chart diagram representing the embodiment of a method that includes steps 810, 820, 830, 840, 845, 847, 850, 860, and 870. More specifically, with reference to Figures 1 and 8 , at step 810, transmit light through analyzer (reference) grating 104 to form diffraction orders 106A, 106B propagating towards workpiece grating 108. Next, at step 820, diffract light 113A, 113B in reflection at workpiece grating 108 is directed back to analyzer (reference) grating 104.
  • step 830 diffract light 113A,113B, diffracted at workpiece grating 108, in transmission through analyzer (reference) grating 104 to form diffracted beams 114A, 114B propagating towards detector 116.
  • step 840 based on irradiance distribution, formed by beams 114A, 114B interfering at the surface of the detector 116, an image is captured by the detector 116.
  • step 845 the gratings 104, 108 are phase shift and another interference pattern image is captured with the detector.
  • step 845 is repeated for the desired number of phase shifts and a separate interference pattern image is captured at each phase shift.
  • step 850 either the reference grating 104 or workpiece grating 108 is rotated in plane by 90 degrees. Subsequently, at step 860, steps 810, 820, 830, 840, 845, and 847 are repeated. Finally, at step 870, interference pattern images are evaluated to determine shape of the workpiece surface 110.
  • Figure 9 illustrates another embodiment of a measurement system 900 that includes a light source 902, a reference grating 904, a workpiece grating 908, a detector 916, a stage 950, a stage mover 952, a processor 917, and a chuck 911 that are somewhat similar to the corresponding components described above and illustrated in Figure 1 .
  • the measurement system 900 can be used to measure in-plane distortion of a target surface 910 of a workpiece 910A.
  • the reference diffraction grating 904 is configured to operate in transmission, and the workpiece diffraction grating 908, configured to operate in reflection, are disposed in a parallel and spaced-apart relationship.
  • the reference grating 904 may be formed on a surface of an optically-transparent member 960 (which, in a specific implementation may be shaped as a wedge; not shown).
  • the workpiece grating 908 is associated and in a mechanical cooperation with the workpiece 910A that is subject to measurement (for example, a semiconductor wafer).
  • the workpiece grating 908 is affixed to (or integrated into) the target surface 910 of the workpiece 91 0A. Further, in certain embodiments, the workpiece grating 908 can cover the entire or substantially the entire target surface 910.
  • the measurement system 900 can include an optical system 962 that includes one or more lenses 964, 966 (two are illustrated in Figure 9 ) that direct the light at the detector 916 and form an image of the interference pattern on the detector 962.
  • the optical system 962 relays the image at the workpiece grating 908 to the optical detector 916.
  • the measurement system 900 can include a spatial filter 970 that defines a filter aperture 972.
  • the spatial filter 970 can be used to block unwanted stray light from reaching the detector 916 and adversely influencing the images.
  • the spatial filter 970 is positioned at a pupil plane of the optical system 962 between workpiece grating 908 and the optical detector 916. Since all of the beams coming from the pair of gratings (104, 108 in Fig. 1 ) or (904, 908 in Fig. 9 ) are essentially plane waves, they focus to points in the pupil, the locations of which depend on their angles. This allows beams at different enough angles to be spatially filtered.
  • the refraction gratings 904, 908 can be similar to the corresponding components described above and illustrated in Figure 1 .
  • the reference grating 904 can be a 1D grating and the workpiece grating 908 can be a 2D grating.
  • the reference grating 904 can be a 2D grating and the workpiece grating 908 can be a 1D grating.
  • each grating 904, 908 can be a 2D grating.
  • the pitch of the reference grating 104 is different from the pitch of the workpiece grating 108.
  • the pitch ratio of the gratings 904, 908 is one to two, with the pitch of the reference grating 904 being one half as large as the pitch of the workpiece grating 908.
  • the workpiece diffraction grating 908 has a first period
  • the reference diffraction grating 904 has a second period
  • the first period is substantially twice as big as the second period.
  • other pitch ratios are possible. For example, it can be useful to intentionally deviate slightly from the 1:2 ratio to create a fringe pattern. As an example, slight deviations from the 1:2 ratio of up to one percent can be tolerated.
  • the light 902A is directed at the reference grating 904 at an oblique angle of incidence.
  • the light 902A can be directed at the reference grating 904 at an angle of incidence of between thirty to sixty degrees relative to normal of the reference grating 904.
  • Figure 10 is an enlarged view of a portion of the measurement system 900 of Figure 9 .
  • a couple of rays 1080, 1082 of the measurement beam are traced through the optically transparent member 960, through the reference grating 904, reflected off the workpiece grating 908 on the workpiece 910A, and through the reference grating 904 and the optically transparent member 960.
  • the light rays 1080, 1082 are is directed from the light source 902 (illustrated in Figure 9 ) towards the transparent member 960 and the reference grating 904 such as to irradiate it at an oblique angle of incidence ⁇ relative to normal.
  • the beams 1080, 1082 may represent the normals to the same optical wavefront or two different normals associated, respectively, with two different optical wavefronts. In the latter case, a phase delay may be introduced between the beams 1080, 1082 prior to their being incident on the transparent member 960.
  • the light source 902 can be used to introduce the time delay.
  • the opto-geometrical parameters of the reference grating 904 and transparent member 960 are chosen such that (i) the light 1080 passes through the transparent member 960 and the reference grating 904 as a zero order transmission beam 1080A that is directed at the workpiece grating 908; and (ii) the light 1081 passes through the transparent member 960 and is diffracted at the reference grating 904 as a - 1 order diffracted beam 1081A that is directed at the workpiece grating 908.
  • the zero order transmission beam 1080A and the -1 order diffracted beam 1081A which are incident on the workpiece grating 908 are reflected off the workpiece grating 908 as diffracted beams 1080B, 1081B that are directed at the reference grating 904 and the transparent member 960, and subsequently to the optical system 960 (illustrated in Figure 9 ) and the detector 916 (illustrated in Figure 9 ).
  • the diffracted beams 1080B, 1081B are directed in a co-linear fashion towards the optical detector 916 (disposed in electrical communication with an optical data acquisition system).
  • the optical detector 916 receives a spatial light distribution formed as a result of interference between the beams 1080B, 1081B and generates the generated electrical signal that represents the in-plane change of a geometrical characteristic of the workpiece 910A (such as an in-plane change of a position of the workpiece 910A, or an in-plane change in shape or form of the workpiece 910A, for example) while being, at the same time, devoid of information representing the out-of-plane change of a geometrical characteristic of the substrate.
  • the data acquisition system (needs number) or unit further extracts the data representing the in-plane distortion of the workpiece 910A from such electrical signal.
  • all other diffraction orders associated with the illuminating beam(s) 1080, 1081 are evanescent so that they do not contribute to the stray light.
  • the angle ⁇ of illumination of the transmitting reference grating 904 (and zero-order diffracted beam formed at that grating) and the pitch values of the gratings 904, 908 are chosen so that the beam(s) 1080B, 1081B from the reflective workpiece grating 908 are diffracted normal to the workpiece grating 908.
  • the pitch of the reference grating 904 is half that of the pitch of the reflective workpiece grating 908.
  • the system is further configured such that the zero-order of diffraction formed at the grating 914 is collected and relayed to the detector 916 by additional optics (not shown).
  • the two beams 1080B, 1081B diffracted by the reflective workpiece grating 908 from the same point receive opposite phases due to any distortion occurring at or on the workpiece grating 908 and, therefore, due to any distortion assocaited with the workpiece 910A to which the workpiece grating 908 is rigidly affixed. Therefore, the distortion of the workpiece grating 908 causes an interferogram at the detector 916 (as a result of interference between the beams 1080B, 1081B) the phase of which is proportion to the magnitute of such distortion (or change in the position of the workpiece grating 908 with respect to the beams 1080B, 1081B) at each point.
  • Data-analysis of the interference phase is further implemented by shifting one of the gratings 904, 908 in incremental fashion increments (either phase-stepping or integrating-bucket style) to obtains incremental changes of phase shift and further by modulating the interference fringes acquired by the detector 916.
  • stray light formed by multiple reflections of the present optical surfaces remains in the system (many stray light paths that are parallel to the measurement paths) and is captured by the optical detector, which leads to low contrast (and coherent noise if the source coherence length is not sufficiently short) of the useful signal.
  • the transparent member 960 includes an upper member surface 960A and an opposed lower member surface 960B.
  • the lower member surface retains the reference grating 904. It should be noted that the upper member surface 960A and the lower member surface 960B can be referred to as a first surface or a second surface.
  • the member surfaces 960A, 960B are parallel and the transparent member 960 is a plane parallel plate.
  • the transparent member 960 can be wedged shaped.
  • the member surfaces 960A, 960B can be close but not parallel.
  • the member surfaces 960A, 960B can be at least one milliradian from being parallel. With this design, some of the stray light will be blocked by the spatial filter and not be directed to the optical detector 916.
  • the gratings 904, 908 can be rotated slightly (e.g. one arcminute to one degree) relative to each other to inhibit stray light from being directed to the optical detector 916.
  • the beams 1080, 1081 have different path lengths between the light source 902 (illustrated in Figure 9 ) and the optical detector 916 (illustrated in Figure 9 ).
  • the light source 902 can be designed to extend the path length of the beam 1080 so that it is equal to the path length of beam 1081.
  • Figure 11 illustrates that the light source 902 can include (i) a beam generator 1188, and (ii) a beam length adjuster 1190 (time delay system) that includes a collimating lens 1191, a first beam splitter 1192, a pair of mirrors 1193, 1194, a second beam splitter 1195, and a diverger lens 1196 that cooperate to generate the measurement beam 902A.
  • the beam 1081 passes straight through each beam splitter 1192, 1195
  • the beam 1080 is directed by the first beam splitter 1192 at the pair of mirrors 1193, 1194 and by the second beam splitter 1195 to be combined with the beam 1081.
  • the two mirrors 1193, 1194 can be moved up and down as necessary to change the optical path of the beam 1080 and adjust the time delay.
  • the path of the beam 1080 has a controllable time delay relative to the beam 1081.
  • comparative example has been consistently utilizing a combination of two, two-dimensional (2D) diffraction gratings - one being on or in direct association with a measured workpiece, and another disposed in front of the workpiece.
  • 2D diffraction gratings for example, one formed on a glass substrate
  • a transmissive 2D grating through which the measurement beam of light is directed to diffract before impinging onto a 2D grating formed on a surface of a semiconductor substrate that is clamped on to a support (such as a vacuum chuck).
  • a reference grating Light incident onto the first 2D grating (referred to as a reference grating) diffracts, in transmission, towards the second 2D grating (referred to as an object grating), and then diffracts again - this time in reflection towards the reference grating.
  • this now thrice-diffracted light is received by an optical detection system configured to determine a complex form of optical interference at the surface of an optical detector.
  • Eq. (1) is shown in Fig. 7 to represent a complex analytical expression representing the irradiance distribution formed, as a result of the conventionally-used approach, at the surface of the detector.
  • 25 or more analytical terms are required, which include various and complex combinations of the -1, 0, and +1 diffraction orders.
  • a person skilled in the art would readily recognize that accurate simulation of the 4-beam, 8-beam, and 16-beam diffraction becomes progressively difficult and imprecise. It is easy to make a mistake in the calculations of this complexity, and the accuracy of the result is further diminished because additional required terms may be simply omitted.
  • a typical lithographic exposure tool equipped with a wafer stage, carrying a semiconductor wafer (that is attached to the stage and that is being irradiated with light from a chosen light source to project a geometrical pattern in a photosensitive resist layer on the wafer), can also include a reflective stage grating.
  • stage grating is to facilitate the measurements of the position and/or orientation of the wafer-stage (and, therefore, the wafer itself) to ensure that the patterning of the wafer during the exposure process is dimensionally and positionally correct (that is - according to the design).
  • the stage grating is conventionally used in conjunction with an encoder head - the optical system that relies on and utilizes light diffracted by the stage grating for forming judiciously-defined interferometric distributions of light from the results of characterization of which the sought-after position and/or orientation of the wafer is further determined.
  • the distortions of the surface of the wafer affect the accuracy of the location of where the patterns are transferred to the wafer.
  • a person of skill understands, therefore, that there remains a need in a solution that improves the accuracy of assessing the distortion(s) introduced by the wafer-holding mechanism.
  • Implementations of the present embodiment address a need to measure geometrical distortion of a workpiece (such as a semiconductor wafer, for example) by providing methods that result in higher light efficiency as compared to methods of the prior art while reducing the complexity of processing of data, which represent interferometrically-formed distribution of irradiance across the surface of an optical detector, thereby offering simpler operations and better measurement performance overall.
  • a workpiece such as a semiconductor wafer, for example
  • the problem of measuring a 2D, in-plane distortion of a workpiece (in one case, a semiconductor wafer) on a sub-nanometer scale is solved, in one embodiment, by complementing the 2D workpiece grating associated with the workpiece with an analyzer grating (reference grating) configured as a 1D grating (instead of the 2D reference grating as done in comparative example) to simplify the overall measurement of the shape of the workpiece.
  • an analyzer grating reference grating
  • one of the two diffraction gratings is rotated with respect to another in the plane of such grating to carry out a similar measurement along another, second axis that is transverse to the first axis.
  • rotation can include an in-plane rotation of the workpiece surface carrying the 2D workpiece grating by 90 degrees; in another specific case, such rotation can include an in-plane rotation of the 1D reference grating by 90 degrees with respect to the workpiece.
  • the distortion of the shape of the workpiece is then determined by repeating such aggregate measurement under the conditions that could have or did change the shape, for example, at a different moment in time and/or in a different ambient condition (for example, at a different temperature or atmospheric pressure, or after the wafer has been transferred from one wafer chuck (on one wafer stage) to a second wafer chuck (on a second wafer stage)).
  • the difference between the results of the two aggregate measurements is indicative of the value(s) of geometrical distortion of the workpiece that has occurred between the two aggregate measurements.
  • the first step of the proposed aggregate measurement is directed only to measuring the workpiece shape along a first axis, while the second step is directed to measuring the workpiece shape only along a second axis that is transverse to the first axis.
  • the overall number of diffraction orders forming the interferometric distribution of irradiance on the optical detector is substantially reduced, as only two (in certain embodiments) diffraction orders are created at the reference grating at each step of the measurement.
  • the 1D grating being a reference (analyzer) grating.
  • the use of the 1D grating provides better diffraction efficiency leading to improved signal contrast and measurement performance. It also reduces the number of diffracted beams that interfere at each detector pixel. This reduction in interference complexity makes the detected interference pattern easier to simulate and understand while, at the same time, removing measurement artifacts from the optical data.
  • the use of the 1D reference grating therefore, ensures results with precision and accuracy not achievable by the measurements of the comparative example.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Claims (14)

  1. Messsystem (100) zur Verwendung bei Messungen von Verzerrungen in der Ebene eines Werkstücks (110A), das ein Werkstückbeugungsgitter (108) enthält, das so konfiguriert ist, dass es Licht in der Reflexion beugt, wobei das Messsystem aufweist:
    einen optischen Detektor;
    das Werkstückbeugungsgitter (108);
    ein Referenzbeugungsgitter (104), das von dem Werkstückbeugungsgitter beabstandet und im Wesentlichen parallel zu dem Werkstückbeugungsgitter ist, wobei das Referenzbeugungsgitter so konfiguriert ist, dass es Licht transmittiert;
    eine Lichtquelle (102), die einen Messstrahl auf das Referenzbeugungsgitter richtet;
    wobei der auf das Referenzbeugungsgitter gerichtete Messstrahl
    (i) durch das Referenzgitter transmittiert und auf das Werkstückbeugungsgitter gerichtet wird,
    (ii) von dem Werkstückbeugungsgitter reflektiert und auf das Referenzbeugungsgitter gerichtet wird, und
    (iii) durch das Referenzgitter transmittiert und auf den optischen Detektor gerichtet wird, und
    wobei der Detektor so konfiguriert ist, dass er eine räumliche Lichtverteilung einer Interferenz von Licht erfasst, das über das Referenzgitter an dem Detektor angekommen ist.
  2. Messsystem nach Anspruch 1, bei dem das Referenzbeugungsgitter ein eindimensionales Beugungsgitter ist und das Werkstückbeugungsgitter ein zweidimensionales Beugungsgitter ist.
  3. Messsystem nach Anspruch 1, bei dem das Referenzbeugungsgitter ein zweidimensionales Beugungsgitter und das Werkstückbeugungsgitter ein eindimensionales Beugungsgitter ist.
  4. Messsystem nach einem der Ansprüche 1 bis 3, bei dem das Referenzbeugungsgitter einen größeren Abstand als das Werkstückbeugungsgitter aufweist.
  5. Messsystem nach Anspruch 4, bei dem das Abstandsverhältnis des Referenzbeugungsgitters und des Werkstückbeugungsgitters ungefähr zwei zu eins beträgt.
  6. Messsystem nach einem der Ansprüche 1 bis 3, bei dem das Referenzbeugungsgitter einen kleineren Abstand als das Werkstückbeugungsgitter aufweist.
  7. Messsystem nach Anspruch 6, bei dem das Abstandsverhältnis des Referenzbeugungsgitters und des Werkstückbeugungsgitters ungefähr eins zu zwei beträgt.
  8. Messsystem nach einem der Ansprüche 1 bis 7, bei dem der Messstrahl einen senkrechten Einfall auf das Referenzbeugungsgitter aufweist.
  9. Messsystem nach einem der Ansprüche 1 bis 7, bei dem der Messstrahl einen schrägen Einfall auf das Referenzbeugungsgitter aufweist und wobei das Licht von dem Werkstückbeugungsgitter senkrecht zu dem Werkstückbeugungsgitter reflektiert wird.
  10. Messsystem nach Anspruch 9, bei dem die Lichtquelle ein Zeitverzögerungssystem (1190) aufweist.
  11. Messsystem nach Anspruch 9 oder 10, ferner aufweisend ein optisch transparentes Element (960), das das Referenzbeugungsgitter hält.
  12. Messsystem nach Anspruch 11, bei dem das optisch transparente Element eine erste Elementfläche und eine gegenüberliegende zweite Elementfläche aufweist, und bei dem die Elementflächen nicht parallel sind.
  13. Messsystem nach einem der Ansprüche 1 bis 12, ferner aufweisend eine Bewegungseinrichtung, die eines der Gitter relativ zu dem anderen Gitter bewegt.
  14. Messsystem nach Anspruch 13, bei dem die Bewegungseinrichtung eines der Gitter relativ zu dem anderen Gitter dreht.
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Publication number Priority date Publication date Assignee Title
CN109458940B (zh) * 2018-12-26 2021-05-11 中国电子科技集团公司第二十六研究所 基于光学模拟的半球谐振子的膜厚均匀性的快速估测方法

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7606548A (nl) * 1976-06-17 1977-12-20 Philips Nv Werkwijze en inrichting voor het uitrichten van een i.c.-patroon ten opzichte van een halfgelei- dend substraat.
US4322162A (en) * 1979-07-23 1982-03-30 National Research Development Corporation Method and apparatus for sensing in-plane deformation of a surface
US4564295A (en) * 1983-03-07 1986-01-14 New York Institute Of Technology Apparatus and method for projection moire topography
US4631416A (en) * 1983-12-19 1986-12-23 Hewlett-Packard Company Wafer/mask alignment system using diffraction gratings
US4656347A (en) * 1984-01-30 1987-04-07 Nippon Telegraph & Telephone Public Corporation Diffraction grating position adjuster using a grating and a reflector
NL8401710A (nl) * 1984-05-29 1985-12-16 Philips Nv Inrichting voor het afbeelden van een maskerpatroon op een substraat.
JPH0685387B2 (ja) * 1986-02-14 1994-10-26 株式会社東芝 位置合わせ方法
NL8600639A (nl) * 1986-03-12 1987-10-01 Asm Lithography Bv Werkwijze voor het ten opzichte van elkaar uitrichten van een masker en een substraat en inrichting voor het uitvoeren van de werkwijze.
EP0243520B1 (de) * 1986-04-29 1991-11-27 Ibm Deutschland Gmbh Interferometrische Maskensubstratausrichtung
FR2598797B1 (fr) * 1986-05-07 1990-05-11 Nippon Telegraph & Telephone Procede de mesure et/ou d'ajustement du deplacement d'un objet et appareil pour la mise en oeuvre de ce procede
KR900004269B1 (ko) * 1986-06-11 1990-06-18 가부시기가이샤 도시바 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치
NL8601547A (nl) * 1986-06-16 1988-01-18 Philips Nv Optisch litografische inrichting met verplaatsbaar lenzenstelsel en werkwijze voor het regelen van de afbeeldingseigenschappen van een lenzenstelsel in een dergelijke inrichting.
US4722600A (en) 1986-10-14 1988-02-02 Chiang Fu Pen Apparatus and method for measuring strain
JP2658051B2 (ja) * 1987-05-15 1997-09-30 株式会社ニコン 位置合わせ装置,該装置を用いた投影露光装置及び投影露光方法
DE68901933T2 (de) * 1988-02-16 1992-12-24 Canon Kk Vorrichtung zur lagefeststellung.
US5325176A (en) * 1988-02-16 1994-06-28 Canon Kabushiki Kaisha Position detecting method and apparatus including Fraunhofer diffraction detector
US4850693A (en) * 1988-05-23 1989-07-25 The United States Of America As Represented By The United States Department Of Energy Compact portable diffraction moire interferometer
US5189494A (en) * 1988-11-07 1993-02-23 Masato Muraki Position detecting method and apparatus
DE3907430C1 (de) * 1988-12-23 1991-03-21 Klaus 8206 Bruckmuehl De Pfister
JPH02192114A (ja) * 1989-01-20 1990-07-27 Canon Inc 位置合わせ装置
US5489986A (en) * 1989-02-28 1996-02-06 Nikon Corporation Position detecting apparatus
JPH02297005A (ja) * 1989-05-12 1990-12-07 Matsushita Electric Ind Co Ltd 位置合わせ装置
JPH032504A (ja) * 1989-05-30 1991-01-08 Nikon Corp 位置合わせ装置
DE4031637C2 (de) * 1989-10-06 1997-04-10 Toshiba Kawasaki Kk Anordnung zum Messen einer Verschiebung zwischen zwei Objekten
NL9000503A (nl) * 1990-03-05 1991-10-01 Asm Lithography Bv Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
JP2893823B2 (ja) * 1990-03-20 1999-05-24 株式会社ニコン 位置合わせ方法及び装置
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法,露光装置,並びに位置検出方法及び装置
US5072126A (en) * 1990-10-31 1991-12-10 International Business Machines Corporation Promixity alignment using polarized illumination and double conjugate projection lens
US5069549A (en) * 1990-11-02 1991-12-03 Industrial Technology Institute Moire contouring camera
JP3128827B2 (ja) * 1990-12-26 2001-01-29 株式会社ニコン 投影露光装置、並びに投影露光方法、及びその投影露光方法を用いたデバイス製造方法、及びそのデバイス製造方法により製造されたデバイス
NL9100215A (nl) * 1991-02-07 1992-09-01 Asm Lithography Bv Inrichting voor het repeterend afbeelden van een maskerpatroon op een substraat.
NL9100410A (nl) * 1991-03-07 1992-10-01 Asm Lithography Bv Afbeeldingsapparaat voorzien van een focusfout- en/of scheefstandsdetectie-inrichting.
EP0577088B2 (de) * 1992-06-30 2010-10-20 Canon Kabushiki Kaisha Gerät zur Detektion von Verschiebungsinformation
US5307152A (en) * 1992-09-29 1994-04-26 Industrial Technology Institute Moire inspection system
US5652426A (en) * 1993-04-19 1997-07-29 Ricoh Company, Ltd. Optical encoder having high resolution
US5414514A (en) * 1993-06-01 1995-05-09 Massachusetts Institute Of Technology On-axis interferometric alignment of plates using the spatial phase of interference patterns
US6154278A (en) * 1993-06-10 2000-11-28 Matsushita Electric Industrial Co., Ltd. Optical encoder for optically measuring displacement of moving body
GB9314991D0 (en) * 1993-07-20 1993-09-01 Sandoz Ltd Mechanical device
US5898486A (en) * 1994-03-25 1999-04-27 International Business Machines Corporation Portable moire interferometer and corresponding moire interferometric method
JPH08210814A (ja) * 1994-10-12 1996-08-20 Canon Inc 光学式変位測定装置
US5808742A (en) * 1995-05-31 1998-09-15 Massachusetts Institute Of Technology Optical alignment apparatus having multiple parallel alignment marks
US6731391B1 (en) * 1998-05-13 2004-05-04 The Research Foundation Of State University Of New York Shadow moire surface measurement using Talbot effect
US6291817B1 (en) * 1998-06-23 2001-09-18 Fuji Photo Optical Co., Ltd. Moire apparatus having projection optical system and observation optical system which have optical axes parallel to each other
IL141536A (en) 1998-08-21 2005-07-25 Olivier M Parriaux Device for measuring translation, rotation or velocity via light beam interference
US6522411B1 (en) 1999-05-25 2003-02-18 Massachusetts Institute Of Technology Optical gap measuring apparatus and method having two-dimensional grating mark with chirp in one direction
TW556296B (en) 2000-12-27 2003-10-01 Koninkl Philips Electronics Nv Method of measuring alignment of a substrate with respect to a reference alignment mark
FR2825150B1 (fr) * 2001-05-28 2003-09-26 Univ Jean Monnet Dispositif de caracterisation de reseaux optiques et procede de fabrication de reseaux optiques avec une frequence spatiale predefinie
US7116430B2 (en) * 2002-03-29 2006-10-03 Georgia Technology Research Corporation Highly-sensitive displacement-measuring optical device
JP4222926B2 (ja) * 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー.ブイ. デバイス検査
TWI230837B (en) * 2002-12-16 2005-04-11 Asml Netherlands Bv Lithographic apparatus with alignment subsystem, device manufacturing method using alignment, and alignment structure
US6864956B1 (en) * 2003-03-19 2005-03-08 Silterra Malaysia Sdn. Bhd. Dual phase grating alignment marks
JP4016395B2 (ja) * 2003-05-28 2007-12-05 船井電機株式会社 複数波長用回折格子および複数波長用回折格子を用いた光ピックアップ装置ならびに光ディスク装置
US7268860B1 (en) * 2003-09-25 2007-09-11 Taitec, Inc. Color Moiré interferometry
CN101061371A (zh) * 2004-11-22 2007-10-24 皇家飞利浦电子股份有限公司 探测物体的运动的光学系统
US20060145066A1 (en) * 2004-12-13 2006-07-06 Hideaki Tamiya Displacement detection apparatus, displacement gauging apparatus and fixed point detection apparatus
CN101268337A (zh) 2005-09-21 2008-09-17 皇家飞利浦电子股份有限公司 用于检测主体运动的系统
US7433018B2 (en) 2005-12-27 2008-10-07 Asml Netherlands B.V. Pattern alignment method and lithographic apparatus
US7545520B2 (en) * 2006-11-15 2009-06-09 Asml Netherlands B.V. System and method for CD determination using an alignment sensor of a lithographic apparatus
US7990543B1 (en) * 2007-08-31 2011-08-02 California Institute Of Technology Surface characterization based on optical phase shifting interferometry
KR20100096097A (ko) * 2007-10-19 2010-09-01 코닌클리케 필립스 일렉트로닉스 엔.브이. 정밀 위치 측정의 변위 디바이스
US8436328B2 (en) 2008-12-16 2013-05-07 Gigaphoton Inc. Extreme ultraviolet light source apparatus
US8462207B2 (en) * 2009-02-12 2013-06-11 Primesense Ltd. Depth ranging with Moiré patterns
WO2011081692A2 (en) 2009-10-06 2011-07-07 Sri International Twin sub-wavelength grating optical signal processor
JP2012103237A (ja) * 2010-10-14 2012-05-31 Canon Inc 撮像装置
US9074911B2 (en) * 2011-08-26 2015-07-07 Nikon Corporation Measurement system and method utilizing high contrast encoder head for measuring relative movement between objects
DE102012217800A1 (de) * 2012-09-28 2014-04-03 Carl Zeiss Smt Gmbh Diffraktives optisches Element sowie Messverfahren
SG11201503261TA (en) * 2012-11-19 2015-05-28 Asml Netherlands Bv Position measurement system, grating for a position measurement system and method
US9977343B2 (en) * 2013-09-10 2018-05-22 Nikon Corporation Correction of errors caused by ambient non-uniformities in a fringe-projection autofocus system in absence of a reference mirror
US10378933B2 (en) * 2013-10-18 2019-08-13 Nikon Corporation Encoder head designs
US9459093B2 (en) * 2014-02-20 2016-10-04 Kabushiki Kaisha Toshiba Deflection measuring device and deflection measuring method
KR101613829B1 (ko) * 2014-05-08 2016-04-20 조춘식 미분 모아레를 이용한 3차원 형상 측정방법 및 장치
US10066974B2 (en) * 2014-10-13 2018-09-04 Zygo Corporation Interferometric encoder systems having at least partially overlapping diffracted beams
US10585357B2 (en) * 2015-12-28 2020-03-10 Asml Netherlands B.V. Alternative target design for metrology using modulation techniques
US10162087B2 (en) * 2016-04-11 2018-12-25 Nikon Research Corporation Of America Optical system with a frustrated isotropic block
JP6583761B2 (ja) * 2016-09-27 2019-10-02 国立研究開発法人産業技術総合研究所 周期模様を利用した三次元形状・変位・ひずみ測定装置、方法およびそのプログラム
US11378724B2 (en) * 2018-12-23 2022-07-05 Ii-Vi Delaware, Inc. Diffraction grating array for wide-angle illuminateon
DE102019204096A1 (de) * 2019-03-26 2020-10-01 Carl Zeiss Smt Gmbh Messverfahren zur interferometrischen Bestimmung einer Oberflächenform
CN111457843B (zh) * 2019-04-26 2021-07-30 上海微电子装备(集团)股份有限公司 位移测量装置、位移测量方法及光刻设备
DE102019206937A1 (de) * 2019-05-14 2020-11-19 Dr. Johannes Heidenhain Gmbh Optische Positionsmesseinrichtung
US20230091424A1 (en) * 2021-09-17 2023-03-23 San Diego State University (Sdsu) Foundation, Dba San Diego State University Method and system for moiré profilimetry using simultaneous dual fringe projection

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US20200232786A1 (en) 2020-07-23
US11982521B2 (en) 2024-05-14

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