EP3580759A4 - PRESCRIBING MEMORY CELLS OF AN ARRAY - Google Patents

PRESCRIBING MEMORY CELLS OF AN ARRAY Download PDF

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Publication number
EP3580759A4
EP3580759A4 EP18752008.5A EP18752008A EP3580759A4 EP 3580759 A4 EP3580759 A4 EP 3580759A4 EP 18752008 A EP18752008 A EP 18752008A EP 3580759 A4 EP3580759 A4 EP 3580759A4
Authority
EP
European Patent Office
Prior art keywords
array
memory cells
writing memory
writing
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18752008.5A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3580759A1 (en
Inventor
Scott James Derner
Christopher John Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of EP3580759A1 publication Critical patent/EP3580759A1/en
Publication of EP3580759A4 publication Critical patent/EP3580759A4/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0662—Virtualisation aspects
    • G06F3/0665—Virtualisation aspects at area level, e.g. provisioning of virtual or logical volumes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0689—Disk arrays, e.g. RAID, JBOD
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2255—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Security & Cryptography (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
EP18752008.5A 2017-02-07 2018-01-30 PRESCRIBING MEMORY CELLS OF AN ARRAY Pending EP3580759A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/426,871 US10418084B2 (en) 2017-02-07 2017-02-07 Pre-writing memory cells of an array
PCT/US2018/016048 WO2018148064A1 (en) 2017-02-07 2018-01-30 Pre-writing memory cells of an array

Publications (2)

Publication Number Publication Date
EP3580759A1 EP3580759A1 (en) 2019-12-18
EP3580759A4 true EP3580759A4 (en) 2020-12-09

Family

ID=63037848

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18752008.5A Pending EP3580759A4 (en) 2017-02-07 2018-01-30 PRESCRIBING MEMORY CELLS OF AN ARRAY

Country Status (7)

Country Link
US (4) US10418084B2 (ko)
EP (1) EP3580759A4 (ko)
JP (1) JP6887509B2 (ko)
KR (2) KR102434165B1 (ko)
CN (1) CN110301007B (ko)
TW (1) TWI668688B (ko)
WO (1) WO2018148064A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899073B2 (en) * 2016-06-27 2018-02-20 Micron Technology, Inc. Multi-level storage in ferroelectric memory
US10504909B2 (en) 2017-05-10 2019-12-10 Micron Technology, Inc. Plate node configurations and operations for a memory array
CN109087674A (zh) * 2017-06-14 2018-12-25 萨摩亚商费洛储存科技股份有限公司 铁电内存及其数据读取、写入与制造方法和电容结构
US10394456B2 (en) * 2017-08-23 2019-08-27 Micron Technology, Inc. On demand memory page size
US11210019B2 (en) 2017-08-23 2021-12-28 Micron Technology, Inc. Memory with virtual page size
US10529410B2 (en) 2017-12-18 2020-01-07 Micron Technology, Inc. Techniques for accessing an array of memory cells to reduce parasitic coupling
JP7307338B2 (ja) * 2019-10-17 2023-07-12 富士通セミコンダクターメモリソリューション株式会社 半導体記憶装置
US11170837B1 (en) * 2020-04-28 2021-11-09 Micron Technology Identifying high impedance faults in a memory device
US11450364B2 (en) * 2020-08-27 2022-09-20 Taiwan Semiconductor Manufacturing Company Ltd. Computing-in-memory architecture
CN113241104B (zh) * 2021-05-31 2024-03-22 无锡舜铭存储科技有限公司 一种可连续写入的铁电存储器及其写入方法
US20230317161A1 (en) * 2022-03-31 2023-10-05 Crossbar, Inc. Matrix multiplication with resistive memory circuit having good substrate density

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754478A (en) * 1993-04-20 1998-05-19 Micron Technology, Inc. Fast, low power, write scheme for memory circuits using pulsed off isolation device
JP2007122874A (ja) * 2007-01-30 2007-05-17 Renesas Technology Corp 強誘電体メモリ
US20080144351A1 (en) * 2006-12-15 2008-06-19 Jarrod Randall Eliason Methods and systems for accessing a ferroelectric memory
US20080285327A1 (en) * 1999-06-02 2008-11-20 Kabushiki Kaisha Toshiba Ferroelectric Memory and Semiconductor Memory

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5905672A (en) 1997-03-27 1999-05-18 Micron Technology, Inc. Ferroelectric memory using ferroelectric reference cells
JPH1040687A (ja) * 1996-03-18 1998-02-13 Matsushita Electron Corp 強誘電体メモリ装置
US6097624A (en) * 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
JP2001319472A (ja) * 2000-05-10 2001-11-16 Toshiba Corp 半導体記憶装置
US20030120858A1 (en) * 2000-09-15 2003-06-26 Matrix Semiconductor, Inc. Memory devices and methods for use therewith
JP3856424B2 (ja) * 2000-12-25 2006-12-13 株式会社東芝 半導体記憶装置
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
CA2500938A1 (en) * 2004-03-24 2005-09-24 Rohm And Haas Company Memory devices based on electric field programmable films
KR100631923B1 (ko) * 2004-10-12 2006-10-04 삼성전자주식회사 반도체 메모리에서의 레퍼런스전압 공급장치 및 그의구동방법
KR100673901B1 (ko) * 2005-01-28 2007-01-25 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
JP2008146727A (ja) 2006-12-07 2008-06-26 Elpida Memory Inc 半導体記憶装置及びその制御方法
US8296628B2 (en) * 2009-03-06 2012-10-23 Texas Instruments Incorporated Data path read/write sequencing for reduced power consumption
WO2012106332A1 (en) 2011-01-31 2012-08-09 Everspin Technologies, Inc. Method of writing to a spin torque magnetic random access memory
US8854858B2 (en) * 2013-01-30 2014-10-07 Texas Instruments Incorporated Signal level conversion in nonvolatile bitcell array
US9117535B2 (en) * 2013-03-04 2015-08-25 Texas Instruments Incorporated Single sided bit line restore for power reduction
US9401196B1 (en) * 2015-06-11 2016-07-26 Texas Instruments Incorporated Dual mode ferroelectric random access memory (FRAM) cell apparatus and methods with imprinted read-only (RO) data
US9514814B1 (en) * 2015-08-13 2016-12-06 Arm Ltd. Memory write driver, method and system
US9721638B1 (en) * 2016-05-10 2017-08-01 Micron Technology, Inc. Boosting a digit line voltage for a write operation
US9715919B1 (en) * 2016-06-21 2017-07-25 Micron Technology, Inc. Array data bit inversion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754478A (en) * 1993-04-20 1998-05-19 Micron Technology, Inc. Fast, low power, write scheme for memory circuits using pulsed off isolation device
US20080285327A1 (en) * 1999-06-02 2008-11-20 Kabushiki Kaisha Toshiba Ferroelectric Memory and Semiconductor Memory
US20080144351A1 (en) * 2006-12-15 2008-06-19 Jarrod Randall Eliason Methods and systems for accessing a ferroelectric memory
JP2007122874A (ja) * 2007-01-30 2007-05-17 Renesas Technology Corp 強誘電体メモリ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018148064A1 *

Also Published As

Publication number Publication date
KR102434165B1 (ko) 2022-08-19
US20210104270A1 (en) 2021-04-08
JP2020509523A (ja) 2020-03-26
JP6887509B2 (ja) 2021-06-16
TW201841158A (zh) 2018-11-16
US11127450B2 (en) 2021-09-21
CN110301007B (zh) 2020-11-20
US10825501B2 (en) 2020-11-03
US20200035286A1 (en) 2020-01-30
TWI668688B (zh) 2019-08-11
US10388354B2 (en) 2019-08-20
WO2018148064A1 (en) 2018-08-16
EP3580759A1 (en) 2019-12-18
CN110301007A (zh) 2019-10-01
KR102321777B1 (ko) 2021-11-05
KR20190104237A (ko) 2019-09-06
US20180366175A1 (en) 2018-12-20
KR20210134080A (ko) 2021-11-08
US20180226116A1 (en) 2018-08-09
US10418084B2 (en) 2019-09-17

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