EP3577524A1 - Semiconductor aqueous composition and use of the same - Google Patents

Semiconductor aqueous composition and use of the same

Info

Publication number
EP3577524A1
EP3577524A1 EP18703964.9A EP18703964A EP3577524A1 EP 3577524 A1 EP3577524 A1 EP 3577524A1 EP 18703964 A EP18703964 A EP 18703964A EP 3577524 A1 EP3577524 A1 EP 3577524A1
Authority
EP
European Patent Office
Prior art keywords
aqueous composition
semiconductor
resist pattern
composition according
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP18703964.9A
Other languages
German (de)
English (en)
French (fr)
Inventor
Kazuma Yamamoto
Tatsuro Nagahara
Takashi Sekito
Tomoyasu YASHIMA
Maki Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of EP3577524A1 publication Critical patent/EP3577524A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Definitions

  • the present invention relates to a semiconductor aqueous composition
  • a surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide, or a salt thereof, and water.
  • One embodiment of the present invention relates to performing cleaning in a manufacturing process of semiconductor using the semiconductor aqueous composition.
  • Another embodiment of the present invention relates to a method for producing a resist pattern or a semiconductor using the semiconductor aqueous composition.
  • Non-Patent Document 1 Non-Patent Document 1
  • Patent Document 1 using a rinse agent containing a specific linear alkane diol, suppression of pattern collapse of a resist pattern of 20 to 500 nm and improvement of pattern width unevenness (LWR: Line width roughness) have been tried.
  • LWR Line width roughness
  • Patent Document 2 it has been tried to clean a liquid crystal panel in which a liquid crystal material is sealed in a 5 pm void part using a cleaning agent for a liquid crystal panel, which contains a specific surfactin.
  • Patent Document 2 JP-B No. 3,758,613
  • Non-Patent Document 1 "Dimensional limitations of silicon nanolines resulting from pattern distortion due to surface tension of rinse water" Namatsu et al . Appl . Phys. Lett. 1995(66) p2, 655-2, 657
  • the inventors of the present invention have thought that a surfactant having high solubility in water is useful for an aqueous composition used in a manufacturing process of semiconductor, and an aqueous composition that does not adversely affect a pattern shape is useful . Further, the inventors of the present invention have noticed that the space width can be reduced, if not only the aqueous composition removes residues in the cleaning step after development, but also the resist pattern wall can be made thick. The inventors of the present invention have investigated use of a surfactant having a large molecular weight for infiltrating into a resist pattern wall to inflate it, but such a surfactant was not satisfying at solubility in water.
  • the inventors of the present invention have searched for a surfactant having, regardless of a large molecular weight, high solubility in water, and tried surfactants having a polar group (for example, a nonionic surfactant to which ethylene oxide is added) .
  • a surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide, or a salt thereof exhibits good solubility in water and that when it is used as a semiconductor aqueous composition, problems such as dissolution of the resist pattern wall and so on can be suppressed .
  • the resist pattern produced by the method of the present invention could reduce (further make finer) the space width.
  • occurrence of defects such as bridge was suppressed and better cleaning was made.
  • LWR has been improved.
  • an object of the present invention is to provide a useful aqueous composition to be used in a manufacturing process of semiconductor, a method for using the aqueous composition in a cleaning step, and methods for producing a resist pattern and a semiconductor.
  • the semiconductor aqueous composition according to the present invention comprises a surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide, or a salt thereof, and water.
  • the number of amino acids composing said organic compound is 5 to 15.
  • the organic compound is represented by the following formula ( 1) .
  • the semiconductor aqueous composition of the present invention may further comprise an antibacterial agent, a germicide, an antiseptic, an antifungal agent or any mixture of any of these. It may further comprise a surfactant other than said surfactant, an acid, a base, an organic solvent or any mixture of any of these.
  • the semiconductor aqueous composition of the present invention is preferably a semiconductor aqueous cleaning composition.
  • Another preferred embodiment of the present invention is a resist pattern cleaning composition.
  • the present invention provides a method for producing a resist pattern, using the semiconductor aqueous composition.
  • the producing method comprises the following steps:
  • the present invention provides a method for manufacturing a semiconductor, comprising the method for producing the resist pattern.
  • the semiconductor aqueous composition of the present invention exhibits good solubility of the surfactant contained therein and can suppress problems such as dissolution of a resist pattern wall . Furthermore, the resist pattern produced using the composition of the present invention can reduce the space width. In addition, with respect to the resist pattern occurrence of defects such as bridge can be suppressed and better cleaning can be made by the composition. Further, as to the pattern, LWR can be improved using the composition.
  • Ci-e alkyl means an alkyl chain having 1 or more and 6 or less carbons (methyl, ethyl, propyl, butyl, pentyl, hexyl etc.).
  • these repeating units copolymerize.
  • these copolymerizations may be any of alternating copolymerization, random copolymerization, block copolymerization, graft copolymerization, or a mixture thereof.
  • Celsius is used as the temperature unit.
  • 20 degrees means 20 degrees Celsius.
  • the semiconductor aqueous composition in the present invention means an aqueous composition used in a manufacturing process of semiconductor, and it is particularly preferably used in a lithography process.
  • the composition of the present invention may not be one in which any semiconductor material is dissolved in a solution.
  • the substance which occupies the most mass ratio in whole of the composition according to the present invention is water.
  • the amount occupied by water is preferably 90 to 99.995 mass %, more preferably 95 to 99.995 mass %, and further preferably 98 to 99.99 mass % as compared with whole of the composition.
  • Water is preferably pure water, DW or deionized water.
  • the surfactant according to the present invention is preferably a cyclic polypeptide type biosurfactant.
  • composition according to the present invention contains solvent(s) other than water.
  • solvents other than water are described later.
  • the surfactant in the present application means an ingredient, which acts on a surface to change its properties (hereinafter referred to as surface active ingredient) or its salt.
  • the surfactant used in the present application does not include any solvent. (When a surface active ingredient or its salt is a liquid from the beginning, these are excluded.)
  • a solid surface active ingredient may be dissolved in a solvent and added to a composition, but such a solvent is contained in the semiconductor aqueous composition as "water or a solvent other than water". Details are described below.
  • the surfactant according to the present invention is preferably a type of biosurfactant, it is not limited to be a single compound as long as the effect of the present invention is exhibited, and it may be a mixture of plural types of surface active ingredients. Further, the surfactant in the present application also includes a state in which a surface active ingredient and its salt are mixed.
  • Organic compound comprising a ring structure, said ring structure comprising peptide or salt thereof
  • the semiconductor aqueous composition in the present invention comprises a surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide or a salt thereof, and water.
  • the organic compound or a salt thereof also comprises an aqueous state in which it is separated into ions in an aqueous solvent of the aqueous composition.
  • the number of amino acids composing the organic compound is 5 to 15.
  • the number is preferably 6 to 12, and further preferably 7 to 10.
  • the organic compound is not necessary to be a single one, and it may be a combination of plural ones which are different.
  • the ring structure comprised in the organic compound is preferably composed by a plural amino acids and one or more assist chains.
  • the amino acids composing the ring structure are independently selected from the group consisting of alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine.
  • An identical amino acid may be selected plural times.
  • these amino acids form peptide bonds.
  • all amino acids comprised in the ring structure compose peptide.
  • amino acids composing the ring structure are independently selected from the group consisting of alanine, asparagine, aspartic acid, glutamic acid, histidine, isoleucine, leucine, lysine, phenylalanine, threonine and valine.
  • the individual amino acid may be L-form or D-form.
  • peptide composing the ring structure is represented by "L-glutamic acid - L-leucine - D-leucine - L-valine - L-aspartic acid - D-leucine - X", wherein X is either one of leucine, isoleucine or valine.
  • R° represents a bond to a side chain (single bond) .
  • one ring structure is preferably contained in the organic compound in the present invention.
  • the ring structure is preferably hydrophilic as a whole. Such a ring structure is considered to have an effect of helping the organic compound to dissolve in water.
  • the organic compound comprises one or more side chains, preferably one side chain.
  • a linear alkyl a branched alkyl
  • -NH-, -C( 0)-
  • -CH(NH 2 )- -CH(OH)-
  • a heterocyclic compound an amino acid or any combination of any of these.
  • an identical one may be selected plural times.
  • the linear alkyl is preferably Ci-io, more preferably Ci-9.
  • the branched alkyl is preferably C3-10, more preferably C3-6 , and further preferably C3-4.
  • the heterocyclic compound is preferably thiazole or pyrrolidine, and more preferably thiazole.
  • the heterocyclic compound may compose a side chain as a linker, or may compose a side chain as a modifying group.
  • the heterocyclic compound composes a side chain as a linker.
  • the amino acids composing the side chain are independently selected from the group consisting of alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, and valine.
  • An identical amino acid may be selected plural times.
  • these amino acids form peptide bonds.
  • all amino acids comprised in the side chain compose peptide.
  • amino acids composing the side chain are independently selected from the group consisting of alanine, asparagine, aspartic acid, glutamic acid, histidine, isoleucine, leucine, lysine, phenylalanine, threonine and valine.
  • the individual amino acid may be L-form or D-form.
  • the side chain is preferably hydrophobic as a whole. Such a side chain is considered to have an effect of helping the organic compound to enter a resist pattern wall and to thicken the resist pattern.
  • the molecular weight of the organic compound according to the present invention is preferably 700 to 2,000, and more preferably 800 to 1,500.
  • the organic compound is represented by the following formula ( 1) as one preferable embodiment. side chain
  • one ring structure is composed of one peptide and one assist chain, and one side chain bonds to the assist chain.
  • the side chain may contain amino acid(s) .
  • the surfactant of the present invention also contains a salt of the organic compound represented by the formula ( 1) .
  • the organic compound can be obtained, produced and synthesized by a publicly known method. For example, it is possible to make a prokaryote or animal cell strain produce the organic compound .
  • a prokaryote or animal cell strain produce the organic compound .
  • the prokaryote used for the production of the organic compound microorganisms belonging to genus Bacillus such as Bacillus subtilis IAM 1213 strain, IAM 1069 strain, IAM 1260 strain, IFO 3035 strain, ATCC 21332 strain and the like can be used. By culturing and purifying this microorganism, the organic compound can be obtained . Using genetic engineering technique such as vector injection, it is also possible to make a prokaryote or animal cell strain produce the desired organic compounds.
  • the organic compound according to the present invention does not have to be a single compound .
  • variations in the modifications and the li ke sometimes occur, and even if such variations are present, the effect of the present invention is not so much influenced .
  • A3 used in Example which is described later is not a single compound, but exhibits the effect of the present invention.
  • a publicly known method can be used for purification. Purification can be done, for example, by making a culture liquid acidic by adding hydrochloric acid or the like, filtering out the organic compound precipitated, dissolving it in an organic solvent such as methanol, and then conducting ultrafiltration, activated carbon treatment, crystallization, etc.
  • the acid addition can also be substituted by adding a calcium salt.
  • Purification is useful for removing the organism and culture liquid that produce the organic compound .
  • Surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide, or a salt thereof
  • the surfactant according to the present invention may comprise a salt of an organic compound comprising a ring structure, said ring structure comprising the peptide.
  • the organic compound is selected from the group consisting of metallic salt, ammonium salt, organic ammonium salt, acid salt and any mixture of any of these.
  • the organic compound may be also used by changing its sodium salt to its ammonium salt. Publicly known methods can be used for changing the salt.
  • alkali metals such as sodium and potassium, alkaline earth metals such as calcium and magnesium, and the like, which form a salt with the organic compound, can be used.
  • organic ammonium salt salts such as trimethylamine, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, lysine, arginine and choline can be used.
  • acid salt sulfate, hydrochloride, phosphate, nitrate and the like can be used.
  • the salt is more preferably a sodium salt, an ammonium salt, a sulfate salt or any mixture of any of these, and more preferably a sodium salt or an ammonium salt.
  • the content ratio of the surfactant of the present invention is preferably 0.005 to 2.0 mass %, more preferably 0.005 to 1.0 mass %, further preferably 0.005 to 0.5 mass %, and even more preferably 0.01 to 0.4 mass %, based on the semiconductor aqueous composition. These ratios do not contain water or other solvents.
  • composition according to the present invention may comprise solvent(s) other than water.
  • solvent(s) other than water for example, an organic solvent is useful for dissolving the solute contained in the composition according to the invention.
  • organic solvents can be used .
  • the content ratio of the organic solvent (or sum thereof in the case of plural) as compared with whole of the composition according to the present invention is preferably 0 to 9.995 mass %, more preferably 0 to 5 mass %, and further more preferably 0 to 1 mass %.
  • the substance which occupies the most amount as the solvent of the composition according to the present invention is preferably water, and the content ratio of the organic solvent in the present composition is preferably 0.1 mass % or less, and further preferably 0.01 mass % or less. In relation to other layers and films, it is preferred that the present solvent contains no organic solvent, and it is one embodiment of the present invention that the content ratio of the organic solvent in the composition according to the present invention is 0.00 mass %.
  • Antibacterial agent germicide, antiseptic and antifungal agent
  • the composition according to the present invention may further comprise an antibacterial agent, a germicide, an antiseptic, an antifungal agent or any mixture of any of these (hereinafter referred to as antibacterial agent etc.), if needed.
  • antibacterial agent etc. an antibacterial agent used to prevent bacteria or fungi from breeding in the aqueous composition over time.
  • the organic compound according to the present invention comprises peptide, it is important to use an antibacterial agent etc. in order to ensure the stability of the present composition.
  • antibacterial agent etc. include alcohols such as phenoxyethanol and isothiazolone.
  • BESTCIDE trade name of Nippon Soda Co., Ltd.
  • a composition comprising one kind of antibacterial agent can be referred.
  • the content ratio of the antibacterial agent etc. (or sum thereof in the case of plural) as compared with whole of the composition of the present invention is preferably 0.0001 to 1 mass %, and more preferably 0.0001 to 0.01 mass %.
  • composition according to the present invention may further comprise a surfactant other than the surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide, or a salt thereof (hereinafter referred to as other surfactant) .
  • a surfactant other than the surfactant comprising an organic compound comprising a ring structure, said ring structure comprising peptide, or a salt thereof (hereinafter referred to as other surfactant) .
  • the content ratio of the surfactant in the present composition as compared with whole of the composition of the present invention is preferably 0.01 to 5 mass %, and more preferably 0.05 to 3 mass %.
  • polyoxyethylene alkyl ether compounds such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether and polyoxyethylene oleyl ether; polyoxyethylene al kylaryl ether compounds such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; polyoxyethylene / polyoxypropylene block copolymer compounds; sorbitan fatty acid ester compounds such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan trioleate and sorbitan tristearate; polyoxyethylene sorbitan fatty acid ester compounds such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate and polyoxyethylene sorbitan tristearate can be referred.
  • fluorine-based surfactants such as EFTOP EF301, EF303 and EF352 (trade name, manufactured by Tochem Products Co., Ltd. ), MEGAFAC F171, F173, R-08, R-30 and R-2011 (trade name, manufactured by DIC Corporation), FLUORAD FC430 and FC431 (trade name, manufactured by Sumitomo 3M Limited), ASAHI GUARD AG710 and SURFLON S-382, SC101, SC102, SC103, SC104, SC105 and SC106 (trade name, manufactured by Asahi Glass Co., Ltd. ), and organosiloxane polymer KP 341 (manufactured by Shin-Etsu Chemical Co., Ltd .), and the like can be referred.
  • EFTOP EF301, EF303 and EF352 trade name, manufactured by Tochem Products Co., Ltd.
  • MEGAFAC F171, F173, R-08, R-30 and R-2011 trade name, manufactured by DIC Corporation
  • the acid or base is used to adjust the pH of treating liquid or to improve the solubility of adding component.
  • the acid or base to be used can be arbitrarily selected as long as the effect of the present invention is not impaired, and examples thereof include carboxylic acids, amines and ammonium compounds. These include fatty acids, aromatic carboxylic acids, primary amines, secondary amines, tertiary amines, and ammonium compounds, and these may be substituted by any substituent or not substituted.
  • the amount of the acid is preferably 0.005 to 0.1 mass % as compared with whole of the composition of the present invention.
  • the amount of the base is preferably 0.01 to 0.3 mass % as compared with whole of the composition of the present invention.
  • the semiconductor aqueous composition according to the present invention after the solute is dissolved, it is possible to remove insoluble matter by filtration through a filter.
  • composition according to the present invention is to be used for cleaning in a manufacturing process of semiconductor.
  • the semiconductor aqueous composition is preferably a semiconductor aqueous cleaning composition.
  • one embodiment of the present invention is to be used for cleaning a resist pattern formed by exposing / developing (lithography technique) a resist film. That is, the semiconductor aqueous composition is more preferably a resist pattern cleaning composition.
  • the cleaning composition is used in a manufacturing process of semiconductor.
  • the resist pattern includes not only one obtained by exposing / developing a resist film but also one having a wall thickened by further covering it with other layer(s) or film(s) (one in which its space width is further made finer) .
  • the resist pattern is further made finer by a resin composition.
  • the lithography process in the method may be any of the method for forming a resist pattern using a publicly known positive or negative type photosensitive resin composition (resist composition), which is a type of developing with an aqueous alkaline solution.
  • resist composition a publicly known positive or negative type photosensitive resin composition
  • Representative pattern forming methods to which the semiconductor aqueous composition of the present invention is applied include the following methods.
  • a photosensitive resin composition is applied on a substrate such as a silicon substrate, a glass substrate, or the like, which has been optionally pretreated, to form a photosensitive resin layer.
  • a publicly known method can be used for the application, but a coating method such as spin coating is suitable.
  • the photosensitive resin composition may be directly applied on a substrate, or may be applied via one or more intermediate layers (for example, a BARC layer) .
  • an anti-reflective film for example, a TARC layer
  • Layers other than the photosensitive resin layer are described later.
  • Typical examples of publicly known positive or negative type photosensitive resin composition of a type of developing with an al kaline developing solution used in the resist pattern producing method of the present invention include one comprising a quinone diazide type photosensitizer and an alkali soluble resin, a chemically amplified photosensitive resin composition, and the like. From the viewpoint of forming a fine resist pattern with high resolution, a chemically amplified photosensitive resin composition is preferable and, for example, a chemically amplified PHS-acrylate hybrid type EUV resist composition can be referred.
  • Examples of the quinone diazide type photosensitizer used in the above-described positive type photosensitive resin composition comprising the quinone diazide type photosensitizer and the alkali soluble resin include 1,2-benzoquinone diazide-4-sulfonic acid, 1,2-naphthoquinone diazide-4-sulfonic acid, 1,2-naphthoquinone diazide-5-sulfonic acid, esters or amides of these sulfonic acids, and examples of the alkali soluble resin include novolac resin, polyvinyl phenol, polyvinyl alcohol, copolymer of acrylic acid or methacrylic acid, and the like.
  • the novolac resin include one produced from one or more phenols such as phenol, o-cresol, m-cresol, p-cresol and xylenol, and one or more aldehydes such as formaldehyde and paraformaldehyde.
  • phenols such as phenol, o-cresol, m-cresol, p-cresol and xylenol
  • aldehydes such as formaldehyde and paraformaldehyde.
  • the chemically amplified photosensitive resin composition includes a positive type chemically amplified photosensitive resin composition comprising a compound (photoacid generator) that generates an acid upon irradiation with active ray or radiation, and a resin whose polarity is increased by the action of the acid generated from the photoacid generator and whose solubility to a developing solution varies in an exposed part and an unexposed part; or a negative type chemically amplified photosensitive resin composition comprising an al kali soluble resin, a photo acid generator and a crosslinking agent, in which crosslinking of the resin due to the crosslinking agent is caused by action of the acid and the solubility to a developing solution varies in an exposed part and an unexposed part.
  • a positive type chemically amplified photosensitive resin composition comprising a compound (photoacid generator) that generates an acid upon irradiation with active ray or radiation, and a resin whose polarity is increased by the action of the acid generated from the photoacid generator and
  • a resin having a group which is decomposed due to the action of acid to form an alkali soluble group in the main chain or side chain of the resin or both main chain and side chain thereof can be referred .
  • Typical examples thereof include polymer in which an acetal group or a ketal group is introduced as a protective group to a hydroxystyrene-based polymer (PHS) (for example, JP-A No. 2- 141,636, J P-A No.
  • the photoacid generator may be any compound as long as it generates an acid upon irradiation with active ray or radiation, and examples thereof include onium salts such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts and arsonium salts, organic halogen compounds, organometallic compounds / organic halides, photoacid generators having an o-nitrobenzyl type protective group, compounds capable of photolysis to generate a sulfonic acid represented by iminosulfonate and the like, disulfone compounds, diazoketosulfones, diazodisulfone compounds, and the like.
  • Compounds in which a group or compound capable of generating an acid by light is introduced into the main chain or the side chain of polymer can also be used.
  • said chemically amplified photosensitive resin composition may further comprise, if needed, an acid decomposable and dissolution inhibiting compound, a dye, a plasticizer, a surfactant, a photosensitizer, an organic basic compound, and a compound that promotes solubility to developing solution, and the like.
  • said photosensitive resin composition is applied onto a substrate by a suitable coating apparatus such as a spinner and a coater by means of a suitable coating method and soft-baked on a hot plate to remove the solvent in the photosensitive resin composition, thereby forming a photosensitive resin layer.
  • the soft baking temperature varies depending on the solvent or the resist composition to be used, but is generally 70 to 150°C, and preferably 90 to 150°C. It can be carried out for 10 to 180 seconds, preferably for 30 to 90 seconds in the case of hot plate, or for 1 to 30 minutes in the case of clean oven.
  • the presence of film(s) or layer(s) other than the photosensitive resin layer is also allowed .
  • intermediate layer(s) may be interposed .
  • the intermediate layer is a layer formed between a substrate and a photosensitive resin layer and is referred also to as underlayer film .
  • a substrate modifying film, a planarizing film, a bottom anti-reflecting coating (BARC layer), an inorganic hard mask intermediate layer (silicon oxide film, silicon nitride film and silicon oxide nitride film) can be referred .
  • BARC layer bottom anti-reflecting coating
  • an inorganic hard mask intermediate layer silicon oxide film, silicon nitride film and silicon oxide nitride film
  • the intermediate layer may be composed of one or more layers.
  • a top anti-reflective coating (TARC layer) may be formed on the photosensitive resin layer.
  • any publicly known technique can be used in accordance with process conditions.
  • the following layer constitution can be referred.
  • These layers can be obtained by coating and thereafter heating and / or exposing to cure, or by employing a publicly known method such as CVD method to form a film . These layers can be removed by a publicly known method (etching or the like), and can be patterned using the upper layer as a mask.
  • the photosensitive resin layer is exposed through a predetermined mask. When other layers (TARC layer etc.) are also included, they may be exposed together.
  • the wavelength of the light used for exposure is not particularly limited, but it is preferable to perform exposure with light having a wavelength of 13.5 to 248 nm. Specifically, KrF excimer laser (wavelength : 248 nm), ArF excimer laser (wavelength : 193 nm), extreme ultraviolet ray (wavelength : 13.5 nm) and the like can be used, and extreme ultraviolet ray is more preferable. These wavelengths allow a range of ⁇ 5%, and preferably a range of ⁇ 1% .
  • post exposure bake may be performed, if needed.
  • the temperature for post-exposure heating is appropriately selected from 70 to 150°C, preferably 80 to 120°C, and the heating time is appropriately selected from 0.3 to 5 minutes, preferably 0.5 to 2 minutes.
  • a developing solution for the development in the method for producing the resist pattern of the present invention, a 2.38 mass % TMAH aqueous solution is preferably used . Further, a surfactant or the like can be added to these developers.
  • the temperature of the developing solution is appropriately selected from 5 to 50°C, preferably 25 to 40°C, and the developing time is appropriately selected from 10 to 300 seconds, preferably from 20 to 60 seconds.
  • publicly known methods such as paddle development can be used.
  • the resist pattern of the present invention includes not only one obtained by exposing / developing a resist film but also one having a wall thickened by further covering it with other layer(s) or film(s) .
  • the resist pattern (the developed photosensitive resin layer) formed up to the above steps is in a non-cleaned state.
  • This resist pattern can be cleaned with the semiconductor aqueous composition of the present invention.
  • the time for bringing the semiconductor aqueous composition into contact with the resist pattern, that is, the treatment time is preferably 1 second or more.
  • the treating temperature may be also arbitrary.
  • the method for bringing a rinse liquid into contact with the resist is also arbitrary, and it can be done, for example, by immersing a resist substrate in a rinse liquid or dropping a rinse liquid onto a rotating resist substrate surface.
  • the resist pattern after being developed can be cleaned with other cleaning liquid before and / or after the cleaning treatment with the semiconductor aqueous composition.
  • the other cleaning liquid is preferably water, and more preferably pure water.
  • the cleaning before the treatment is useful for cleaning the developing solution that has adhered to the resist pattern.
  • the cleaning after the treatment is useful for cleaning the semiconductor aqueous composition.
  • One preferred embodiment of the production method of the present invention is a method comprising, by pouring pure water onto a resist pattern, cleaning the pattern after being developed while substituting the developing solution, and further, by pouring the semiconductor aqueous composition while keeping the pattern immersed in pure water, cleaning the pattern while substituting pure water.
  • the cleaning with the semiconductor aqueous composition may be carried out by any conventionally known method. It can be done, for example, by immersing a resist substrate in the semiconductor aqueous composition, or by dropping the semiconductor aqueous composition onto a rotating resist substrate surface. These methods may be carried out in appropriate combination thereof.
  • the bridge is one in which undesired structure(s) exist in the groove(s) of a resist pattern and is a kind of defect. The reason includes that the resist patterns (walls) are connected to each other or that foreign substance which should be flowed is caught in the groove and remains therein. When a desired groove is filled with bridge(s), it becomes impossible to design a desired circuit in a following process such as etching.
  • one semiconductor includes one circuit unit in the horizontal direction and a plural circuit units in the vertical direction.
  • the occurrence frequency of the portion where the interval between a wall and a wall is narrow is low, the occurrence frequency of defects decreases, so that the occurrence frequency of defective products decreases.
  • the minimum space size of the resist pattern in one circuit unit is preferably 10 to 30 nm, more preferably 15 to 25 nm, and further preferably 18 to 22 nm.
  • the resist pattern produced by the method of the present invention could reduce the space width (make further finer) as compared with the case of cleaning with pure water.
  • the space width means a width of a trench (groove) between a wall and a wall, of a resist pattern.
  • the resist pattern which can be produced by using the method of the present invention can reduce the space width preferably 0.5 to 5 nm, more preferably 1.0 to 2.0 nm, and further preferably 1.3 to 2.4 nm, as compared with the case of cleaning with pure water.
  • the resist pattern produced by the method of the present invention could make the LWR small . This is considered to be useful for raising the yield rate.
  • an intermediate layer and/or a substrate can be patterned .
  • publicly known methods such as etching (dry etching and wet etching) can be used.
  • etching dry etching and wet etching
  • an intermediate layer is etched using a resist pattern as an etching mask, and a substrate can be etched using the obtained intermediate layer pattern as an etching mask to form a pattern on the substrate.
  • a photoresist pattern as an etching mask, to etch a substrate as it is while etching layer(s) (for example, intermediate layer) lower than the photoresist layer.
  • Wiring can be formed on the substrate utilizing the formed pattern.
  • These layers can be removed, preferably by dry etching with O2, CF 4 , CH F3, CI 2 or BCh, and preferably, O2 or CF 4 can be used.
  • the substrate is further processed, if needed, and a device is formed .
  • a device is formed .
  • publicly known methods can be applied.
  • the substrate is optionally cut into chips, connected to a lead frame, and packaged with resin.
  • this packaged product is called semiconductor.
  • FIG . 1 is an SEM image of a resist pattern having a space width where bridge(s) have occurred in case of Comparative Composition 1.
  • FIG . 2 is an SEM image of a resist pattern having a minimum space width in case of Comparative Composition 1.
  • FIG. 3 is an enlarged figure of FIG. 1.
  • FIG. 4 is an enlarged figure of FIG. 2.
  • Colistin sulfate A CH 3
  • A3 columnistin sulfate, model number C2930, manufactured by Tokyo Chemical Industry Co., Ltd .
  • A4 was prepared as a solution by changing Al to its ammonium salt in the following process.
  • Example Composition 1 0.2 g of Al was added to 1,000 g of pure water, and this was stirred and completely dissolved to obtain a 0.02 mass % aqueous solution of Al . This solution was designated as Example Composition 1.
  • the additives and their concentrations in Example Compositions were summarized in Table 1.
  • compositions were prepared in the same manner as in Preparation Example 1 except that the surfactants and concentrations were changed as described in Table 1. In Comparative Preparation Example 1, no surfactant was added.
  • Example Compositions 2 to 6 were designated as Example Compositions 2 to 6 and Comparative Compositions 1 to 3, respectively.
  • Example Composition 7 5.0 g of the above-described A4 solution was batched off. This was added to 245 g of pure water, stirred, and completely dissolved . This solution was designated as Example Composition 7.
  • the mass % in Table 1 shows the mass % of the present organic compound as a solute.
  • the substrate for evaluation used for following evaluation was prepared as shown below.
  • the surface of a silicon substrate (manufactured by SUMCO Corporation, 12 inches) was treated with a 1, 1, 1,3,3,3-hexamethyldisilazane solution at 90°C for 30 seconds.
  • a chemically amplified PHS-acrylate hybrid type EUV resist composition was spin-coated thereon and soft-baked at 110°C for 60 seconds, thereby forming a resist film having a thickness of 50 nm on the substrate.
  • This was exposed through a mask of line : space 3 : 1 (78 nm : 26 nm) with an extreme ultraviolet stepper NXE : 3100 (manufactured by ASM L Holding N. V.) .
  • Plural exposure amounts were set, and substrates of each condition were obtained . As the exposure amount increases, the space width of the resist pattern formed by later development increases.
  • This substrate was post-exposure baked (PEB) at 100°C for 60 seconds. Thereafter, the resist film was subjected to puddle development for 30 seconds using a 2.38% tetramethylammonium hydroxide (TMAH) aqueous solution.
  • TMAH tetramethylammonium hydroxide
  • pure water was started to flow onto the substrate, the puddle developing solution was replaced, while rotating, with pure water, and the flowing was stopped in a state of being puddled with pure water. Then, each composition shown in Table 1 was poured into this, and the substrate was rotated at a high speed, thereby spin-dried.
  • the space width reduction amount was evaluated as follows.
  • the space width of Comparative Composition 1 to which no surfactant was added was measured with a SEM instrument, CG 5000 (manufactured by Hitachi High-Technologies Corporation), and found to be 26.0 nm.
  • CG 5000 manufactured by Hitachi High-Technologies Corporation
  • the space widths treated with Example Compositions 1 to 7 and Comparative Composition 2 were similarly measured.
  • the difference between the obtained space width and the space width treated with Comparative Composition 1 is shown in Table 1 as the space width reduction amount.
  • the space width treated with Example Composition 1 was 24.2 nm, and the space width was narrower by 1.8 nm than that treated with Comparative Composition 1 (26.0 nm) . It was confirmed that in the resist pattern on the substrate for evaluation, which was treated with Example Compositions 1 to 7, the space width could be made narrower than that treated with water (Comparative Composition 1) .
  • the space width of the resist pattern was measured with the above described SEM instrument, CG 5000, and it was observed whether or not bridge(s) had occurred in the space.
  • a substrate for evaluation which was prepared with a next smaller exposure amount, was evaluated . This process was repeated until occurrence of any bridge was confirmed .
  • the space width of the resist pattern of the substrate for evaluation was designated as space width where a bridge occurred .
  • the space width of a substrate for evaluation (that prepared with a next larger exposure amount) evaluated just before the substrate for evaluation was designated as minimum space width.
  • the minimum space width was 22.6 nm
  • the space width of the substrate for evaluation where bridge occurrence was confirmed was 21.8 nm.
  • FIG. 1 to 4 show SEM images of the resist pattern with the space width and the minimum space width where a bridge occurred, in case of Comparative Composition 1.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Peptides Or Proteins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
EP18703964.9A 2017-02-06 2018-02-05 Semiconductor aqueous composition and use of the same Withdrawn EP3577524A1 (en)

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PCT/EP2018/052726 WO2018141944A1 (en) 2017-02-06 2018-02-05 Semiconductor aqueous composition and use of the same

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DE68926019T2 (de) 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
JPH02141636A (ja) 1988-11-24 1990-05-31 Kawasaki Steel Corp 油圧システムの内部リーク診断方法
DE69027799T2 (de) 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
DE4202845A1 (de) 1992-01-31 1993-08-05 Basf Ag Strahlungsempfindliches gemisch
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP3758613B2 (ja) * 2002-06-28 2006-03-22 昭和電工株式会社 液晶パネル用洗浄剤組成物
JP4657899B2 (ja) * 2005-11-30 2011-03-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP5069494B2 (ja) 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
JP5336306B2 (ja) 2008-10-20 2013-11-06 信越化学工業株式会社 レジスト下層膜形成方法、これを用いたパターン形成方法、及びレジスト下層膜材料
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JP6106990B2 (ja) 2012-08-27 2017-04-05 富士通株式会社 リソグラフィ用リンス剤、レジストパターンの形成方法、及び半導体装置の製造方法
JP6555595B2 (ja) * 2014-03-05 2019-08-07 株式会社カネカ 臨界ミセル濃度の低減方法
WO2016159886A1 (en) * 2015-03-31 2016-10-06 Agency For Science, Technology And Research Self-assembling ultrashort aliphatic cyclic peptides for biomedical applications

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WO2018141944A1 (en) 2018-08-09
TW201840837A (zh) 2018-11-16

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