TWI800500B - 阻劑圖案的製造方法及半導體的製造方法 - Google Patents

阻劑圖案的製造方法及半導體的製造方法 Download PDF

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Publication number
TWI800500B
TWI800500B TW107104027A TW107104027A TWI800500B TW I800500 B TWI800500 B TW I800500B TW 107104027 A TW107104027 A TW 107104027A TW 107104027 A TW107104027 A TW 107104027A TW I800500 B TWI800500 B TW I800500B
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TW
Taiwan
Prior art keywords
producing
resist pattern
semiconductor
producing semiconductor
producing resist
Prior art date
Application number
TW107104027A
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English (en)
Other versions
TW201840837A (zh
Inventor
山本和磨
長原達郎
關藤高志
八嶋友康
石井牧
Original Assignee
德商默克專利有限公司
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Application filed by 德商默克專利有限公司 filed Critical 德商默克專利有限公司
Publication of TW201840837A publication Critical patent/TW201840837A/zh
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Publication of TWI800500B publication Critical patent/TWI800500B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Peptides Or Proteins (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW107104027A 2017-02-06 2018-02-05 阻劑圖案的製造方法及半導體的製造方法 TWI800500B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-019871 2017-02-06
JP2017019871A JP2018127513A (ja) 2017-02-06 2017-02-06 半導体水溶性組成物、およびその使用

Publications (2)

Publication Number Publication Date
TW201840837A TW201840837A (zh) 2018-11-16
TWI800500B true TWI800500B (zh) 2023-05-01

Family

ID=61188793

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107104027A TWI800500B (zh) 2017-02-06 2018-02-05 阻劑圖案的製造方法及半導體的製造方法

Country Status (4)

Country Link
EP (1) EP3577524A1 (zh)
JP (2) JP2018127513A (zh)
TW (1) TWI800500B (zh)
WO (1) WO2018141944A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020188090A (ja) * 2019-05-13 2020-11-19 Jsr株式会社 コバルトを含む基板を処理するための半導体洗浄用または化学機械研磨用組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027133A (ja) * 2002-06-28 2004-01-29 Showa Denko Kk 液晶パネル用洗浄剤組成物
TW201035307A (en) * 2009-03-31 2010-10-01 Tokyo Ohka Kogyo Co Ltd Cleaning liquid for lithography and method for forming a resist pattern using the same

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DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE68926019T2 (de) 1988-10-28 1996-10-02 Ibm Positiv arbeitende hochempfindliche Photolack-Zusammensetzung
JPH02141636A (ja) 1988-11-24 1990-05-31 Kawasaki Steel Corp 油圧システムの内部リーク診断方法
DE69027799T2 (de) 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
DE4202845A1 (de) 1992-01-31 1993-08-05 Basf Ag Strahlungsempfindliches gemisch
JP3751065B2 (ja) 1995-06-28 2006-03-01 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3380128B2 (ja) 1996-11-29 2003-02-24 富士通株式会社 レジスト材料及びレジストパターンの形成方法
JP3297272B2 (ja) 1995-07-14 2002-07-02 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
JP4657899B2 (ja) * 2005-11-30 2011-03-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP5069494B2 (ja) 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
JP5336306B2 (ja) 2008-10-20 2013-11-06 信越化学工業株式会社 レジスト下層膜形成方法、これを用いたパターン形成方法、及びレジスト下層膜材料
US8747886B2 (en) * 2009-02-12 2014-06-10 Tufts University Nanoimprinting of silk fibroin structures for biomedical and biophotonic applications
JP6063879B2 (ja) * 2011-03-18 2017-01-18 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 集積回路デバイス、光デバイス、マイクロマシン及び線幅５０ｎｍ以下のパターニングされた材料層を有する機械的精密デバイスの製造方法
JP5830444B2 (ja) * 2012-07-02 2015-12-09 信越ポリマー株式会社 導電性高分子組成物、該組成物より得られる帯電防止膜が設けられた被覆品、及び前記組成物を用いたパターン形成方法。
JP6106990B2 (ja) 2012-08-27 2017-04-05 富士通株式会社 リソグラフィ用リンス剤、レジストパターンの形成方法、及び半導体装置の製造方法
JP6555595B2 (ja) * 2014-03-05 2019-08-07 株式会社カネカ 臨界ミセル濃度の低減方法
WO2016159886A1 (en) * 2015-03-31 2016-10-06 Agency For Science, Technology And Research Self-assembling ultrashort aliphatic cyclic peptides for biomedical applications

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004027133A (ja) * 2002-06-28 2004-01-29 Showa Denko Kk 液晶パネル用洗浄剤組成物
TW201035307A (en) * 2009-03-31 2010-10-01 Tokyo Ohka Kogyo Co Ltd Cleaning liquid for lithography and method for forming a resist pattern using the same

Also Published As

Publication number Publication date
JP2020507915A (ja) 2020-03-12
EP3577524A1 (en) 2019-12-11
JP2018127513A (ja) 2018-08-16
JP7200110B2 (ja) 2023-01-06
WO2018141944A1 (en) 2018-08-09
TW201840837A (zh) 2018-11-16

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