EP3491165A1 - Verbesserte lenkung von ionen aus einem plasma auf ein zu beschichtendes substrat - Google Patents
Verbesserte lenkung von ionen aus einem plasma auf ein zu beschichtendes substratInfo
- Publication number
- EP3491165A1 EP3491165A1 EP17732864.8A EP17732864A EP3491165A1 EP 3491165 A1 EP3491165 A1 EP 3491165A1 EP 17732864 A EP17732864 A EP 17732864A EP 3491165 A1 EP3491165 A1 EP 3491165A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- ions
- potential
- coating
- substrate holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
Definitions
- the present invention relates to a substrate holder and a
- Coating system for coating substrates with ions from a plasma and a method for operating a coating system Coating system for coating substrates with ions from a plasma and a method for operating a coating system.
- a plurality of components to be coated simultaneously are grouped as substrates around a central plasma.
- the plasma acts as a source of ions of the
- Coating material By applying a high voltage to the individual substrates, ions are accelerated in the direction of the substrates. As the ions impinge on the substrates with high kinetic energies, a high-quality coating is formed there.
- a corresponding apparatus is known from DE 198 26 259 AI.
- the separation of plasma generation and substrate voltage generation allows control of substrate temperature as well as the use of various types of plasma generation sources.
- the substrate voltage is applied after a bipolar pulsed timing program to counteract charging effects.
- JP 2001 107 729 A discloses applying a voltage in a sputtering system not to the substrate itself but to an electrode buried in the insulating substrate holder. By interaction of this voltage with the plasma, the electric field at the substrate surface, and thus the coverage of the substrate with the applied layer, homogenized.
- JP 2000 119 849 A discloses the substrate on an insulating
- the substrate holder comprises a first contact for supplying a potential Us to the substrate.
- a charging area on the surface of the substrate holder is designed as chargeable by ions arriving from the ion source of the coating installation, and / or a second contact is provided, via which an electrode area on the surface of the substrate holder with one of
- This potential UH can in particular a floating potential or a
- an insulating piece of material of the substrate holder can provide the loading area.
- the substrate holder can be made entirely of insulating material.
- the surface of the substrate holder may also be electrically conductive. It can then for example be wholly or partially provided with a cover.
- the cover may itself be insulating or at least insulated against the surface of the substrate holder.
- the cover may, for example, comprise a dielectric layer on which a metal layer may optionally be arranged.
- the surface of the substrate holder may also be, for example, electrically conductive and segmented in its plane into a plurality of mutually isolated regions.
- the substrate holder may be made of a ceramic, on which the segmented electrically conductive surface is applied as a coating. A segment from which impinging ions can not drain can then serve as the loading area.
- a region on an electrically conductive surface of the substrate is configured as a charging region by a cover, then this region can in particular simultaneously serve as the electrode region.
- the steering of the ions from the plasma to the substrate is improved.
- the proportion of the ions incident on the substrate can be increased, while at the same time the proportion of the ions that misses the substrate and on minor surfaces of the substrate holder or the
- Coating plant hits is reduced.
- Coating in which by bombardment with high-energy gas ions, for example argon ions, impurities are removed from the surface of the substrate from the ion source plasma.
- high-energy gas ions for example argon ions
- impurities are removed from the surface of the substrate from the ion source plasma.
- these gas ions encounter metallic secondary surfaces, they can dissolve out metal atoms, such as iron atoms.
- ions that miss the substrate and impinge on minor surfaces are not available on the surface of the substrate. Regions of the substrate surface that are not in direct line of sight with the ion source may be undersupplied with ions. If the substrate is a complex component, which has, for example undercuts, it must during the
- Editing may be rotated or repositioned. This concerns both the cleaning and the subsequent coating.
- the substrate holder according to the invention provides two independent constructive measures which counteract both the undesired removal of secondary surfaces during cleaning and the undersupplying of regions of the substrate surface with ions.
- a loading area on the surface of the substrate holder charges during operation of the coating system by charged particles, in particular gas ions and / or ions of a coating material. From this charge emanates an electric field, which reduces the electric field in the free space between the ion source and the substrate holder on balance. Ions from the ion source, which miss the substrate, so weaker on the
- Substrate holder accelerated towards. Surprisingly, this has the effect that at least a portion of the ions, which has already missed the substrate per se, on the trajectory to the substrate holder by random collision processes still receives a sufficient momentum component in the direction of the substrate surface and impinges on the substrate surface. Depending on its strength and on the velocity of the incident ions, the electric field emanating from the charge of the charging region can even redirect these ions directly to the substrate surface without the need for statistical collision processes.
- a charging area is provided on the surface of the substrate holder and can be acted upon by an additional, freely selectable potential UH, then this can be done electric field between the ion source, the substrate and the substrate holder to an even greater extent and be adapted with even greater freedom so that ions that have missed the substrate itself, are actively redirected towards the surface of the substrate.
- the potential region can be designed in such a way that the potential Us on the surface of the substrate is lowest in terms of energy from the point of view of the ions and / or the ions are repelled by the substrate holder.
- the invention also provides a coating system which is optimized for use with the substrate holder according to the invention, but also without these substrate holder has advantages over conventional coating equipment and is sold as a separate unit.
- This coating system comprises at least one ion source and a first voltage source, which is connectable to the substrate to be coated, so that gas ions, and / or ions of a coating material, from the ion source by an applied from the first voltage source to the substrate electric potential Us in the direction of the Substrate can be accelerated.
- the ion source can be in particular a plasma.
- Potential Mother in free space beyond the plasma edge layer decides in which direction and at what speed the ions move out of the plasma.
- At least one secondary surface, toward which the substrate moves towards missing ions is designed to be chargeable by incident ions.
- at least a second secondary surface toward which the substrate moves towards missing ions.
- Voltage source provided, which is connectable to the secondary surface, so that this secondary surface is acted upon by a different potential from the potential U, arbitrary potential UH.
- the secondary surface may be made chargeable in the same manner as previously described for the substrate holder.
- the potential UH may in particular be a floating potential or a ground potential.
- the secondary surface may be arranged on the substrate holder and / or elsewhere in the coating system. For example, some of the ions that miss the substrate may move onto the substrate holder and another portion may move onto the wall of the substrate
- Vacuum recipient Such a situation may occur, for example, when a plasma is arranged as an ion source in the center of the coating system and the substrates to be coated are grouped around the plasma. The potential Us applied to the substrates then draws the ions radially outward from the plasma. Are the substrate holder, for example, in the ground or in the
- the coating system interacts with the substrate holder such that the second voltage source, in conjunction with the second contact of the substrate holder, can apply a part of the surface of the substrate holder to the potential UH.
- the second voltage source in conjunction with the second contact of the substrate holder, can apply a part of the surface of the substrate holder to the potential UH.
- a controller for the second voltage source is provided.
- This regulator is advantageously designed to reduce the potential UH of a change in the potential Us
- the controller is adapted to the potential UH of a change of
- the acceleration that ions experience from the plasma toward the substrate is due to an electrostatic force. This power depends on the
- the potential of the plasma boundary layer in turn depends on the properties of the plasma, for example its
- the plasma edge layer of a pure argon plasma as used for cleaning the substrate upstream of the actual coating, has a different potential than the plasma edge layer of a plasma, which additionally contains the actual coating material.
- the potential Us at the substrate is guided as a process parameter.
- the controller now ensures that the potential UH is always adjusted to minimize the impact of ions on minor surfaces. This can in particular ensure that a change in the properties of the plasma, and / or of Us, does not suddenly lead to an undersupply of regions of the substrate surface with ions.
- a substrate holder according to the invention in the electrical connection between the first voltage source and the substrate, and / or in the electrical
- the first voltage source may be connected to the substrate via the first contact of the substrate holder, and / or the second voltage source may be connected via the second contact of the substrate holder to an electrode region of the substrate holder.
- the thickness of this dielectric coating or insulating cover is given by the material-dependent dielectric strength.
- the thickness should be chosen be that the breakdown field strength at any time greater than the field strength in the coating or cover, due to the
- the maximum thickness is limited by the interfering contours of the substrate holders, e.g. adjacent substrate holder and / or
- the invention also relates to a method of operating a coating system in which gas ions and / or ions of a coating material are accelerated from an ion reservoir by applying an electrical potential Us to a substrate in the direction of the substrate.
- At least one secondary surface to which the substrate moves towards missing ions is acted upon by a potential UH different from the potential Us.
- a potential UH which acts repulsively on the ions.
- the potential UH may in particular be a floating potential or a ground potential.
- Component must be rotated or otherwise moved in a vacuum recipient. A corresponding effort for mechanical or electrical feedthroughs in the vacuum recipient can be saved. This applies both to the actual coating and to the cleaning preceding this coating. However, are means for movement of the substrate in the Coating plant available, this movement can cooperate advantageously with the measures according to the invention.
- Substrate be distributed over an area with a certain spatial extent. Nevertheless, especially with large-sized components as substrates, and / or with a particularly complex geometry of the undercuts, parts of the surface can be undersupplied with ions. Especially in the area outside the direct line of sight to the ion source the total dose of ions over the
- the potential U H is varied in order to homogenize the surface of the substrate in order to change the location at which the deflected ions impinge on the substrate.
- Voltage source be embodied.
- the method can be embodied in particular in a computer program.
- the invention therefore also relates to a computer program product with machine-readable instructions which, when executed on a computer and / or a control unit with a coating system connected thereto, the coating system to a coating system according to the Upgrade the invention, and / or cause the computer, the control unit and / or the coating system to carry out a method according to the invention.
- the invention can be used particularly advantageously for the deposition of DLC wear protection layers and thus indirectly improves all components of the injection technique which use such DLC layers. Furthermore, the invention can also be applied to all low-pressure-based
- Plasma coatings are used in which the plasma generation on the one hand and the acceleration of the ions by a bias voltage on the other hand are decoupled from each other. This applies both in in-line systems and in batch production. Examples of such applications are magnetron sputtering, an ECR source, a low voltage arc, or other ion sources.
- FIG. 1 embodiment of a coating system 100 according to the invention
- FIG 2 embodiment of a substrate holder 1 according to the invention
- Figure 3 parasitics in the prior art, which the invention counteracts.
- FIG. 1 shows an embodiment of a coating installation 100 in a top view.
- Coating unit 100 comprises a vacuum recipient 110, in the center of which a plasma with plasma edge layer 104a as ion source 104
- the substrates to be coated 2a-2f are via a loop 111 electrically connected to each other and are from the first
- Voltage source 106 is supplied with a potential Us. This potential Us attracts the ions 101, 102 from the ion source 104.
- the ion source 104 is set to emit only argon ions 101.
- the argon ions 101 carry impurities from the substrates 2a-2f.
- the ion source 104 is adjusted so that it also emits ions 102 of the actual coating material 103.
- the coating material 103 deposits on the substrates 2a-2f.
- the substrates 2a-2f are used with substrate holders 1 in
- the substrate holder 1 are hidden in the perspective selected in Figure 1 by the substrates 2a-2f and therefore not shown.
- the inner wall of the vacuum recipient 110 forms an auxiliary surface 105 to which
- This secondary surface 105 is provided with an insulating cover 113, the thickness of which is shown greatly exaggerated in FIG. Furthermore, the
- the deflection has, on the one hand, the effect that less material is removed from the auxiliary surface 105 and deposits on the substrates 2a-2f. On the other hand, the entire surface of the substrate 2a-2f is reached in each case, and not only the partial regions which lie in direct line of sight with the ion source 104. During the actual coating, the deflection accordingly has the effect that the coating material 103 is deposited on the complete surface of the substrate 2a-2f and no partial areas
- Wear protection layers have the consequence that there is an increased wear and the component fails early.
- Figure 2 shows an embodiment of a substrate holder 1 according to the invention.
- the substrate holder 1 has a first contact 3, over which the
- Substrate 2 can be acted upon by a potential Us.
- its electrically conductive surface 11 has a loading area 12, which is provided with an insulating cover 13.
- the entire surface 11 of the substrate holder 1 is further acted upon by a second contact 4 with the potential UH and serves at the same time as the electrode area 14. Zur
- the substrate 2 is connected to the substrate holder 1 via an insulating intermediate piece 15
- Substrate holder 1 isolated so that the potential Us is not shorted to the potential UH.
- FIG. 3 illustrates the disturbing effects in the prior art, which the invention counteracts.
- FIG. 3 a shows the previous situation during the cleaning of the substrate 2. From the ion source 1, gas ions 101 are accelerated in the direction of the substrate 2, which is at the potential Us. Since the substrate 2 is electrically conductively connected to the substrate holder 1, the substrate holder 1 is also at the potential Us and attracts the gas ions 101 as strongly as the substrate
- Substrate holder 1 are knocked out, which are reflected as impurities 21 on the substrate 2. Furthermore, the side of the substrate 2 facing away from the ion source 104 is not detected by the gas ions 101. There from the outset contaminants 22 are thus through the cleaning of the substrate 2 is not eliminated and can the application of the
- Interrupt coating material 103 is interrupt coating material 103.
- FIG. 3b shows the previous situation in the production of the coating from the coating material 103 on the substrate 2
- Coating material 103 can reach only about half the surface of the substrate 2. For example, to completely coat the substrate 2, it must be rotated.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102016213951.7A DE102016213951A1 (de) | 2016-07-28 | 2016-07-28 | Verbesserte Lenkung von Ionen aus einem Plasma auf ein zu beschichtendes Substrat |
PCT/EP2017/065185 WO2018019482A1 (de) | 2016-07-28 | 2017-06-21 | Verbesserte lenkung von ionen aus einem plasma auf ein zu beschichtendes substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3491165A1 true EP3491165A1 (de) | 2019-06-05 |
Family
ID=59215762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17732864.8A Pending EP3491165A1 (de) | 2016-07-28 | 2017-06-21 | Verbesserte lenkung von ionen aus einem plasma auf ein zu beschichtendes substrat |
Country Status (5)
Country | Link |
---|---|
US (1) | US20200370169A1 (de) |
EP (1) | EP3491165A1 (de) |
CN (1) | CN109477209B (de) |
DE (1) | DE102016213951A1 (de) |
WO (1) | WO2018019482A1 (de) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US6827824B1 (en) * | 1996-04-12 | 2004-12-07 | Micron Technology, Inc. | Enhanced collimated deposition |
JP2002504189A (ja) | 1997-06-16 | 2002-02-05 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | 基板の真空被覆方法および装置 |
JP3321403B2 (ja) * | 1997-12-08 | 2002-09-03 | 株式会社東芝 | 成膜装置及び成膜方法 |
JP4141022B2 (ja) | 1998-10-09 | 2008-08-27 | キヤノンアネルバ株式会社 | スパッタリング方法及びスパッタリング装置 |
JP4067248B2 (ja) | 1999-10-05 | 2008-03-26 | ダイハツ工業株式会社 | 水冷式内燃機関におけるシリンダヘッドの構造 |
US6620736B2 (en) * | 2001-07-24 | 2003-09-16 | Tokyo Electron Limited | Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing |
US20110011534A1 (en) * | 2009-07-17 | 2011-01-20 | Rajinder Dhindsa | Apparatus for adjusting an edge ring potential during substrate processing |
CN103649370B (zh) * | 2011-07-06 | 2016-03-23 | 株式会社神户制钢所 | 真空成膜装置 |
KR102038647B1 (ko) * | 2013-06-21 | 2019-10-30 | 주식회사 원익아이피에스 | 기판 지지 장치 및 이를 구비하는 기판 처리 장치 |
-
2016
- 2016-07-28 DE DE102016213951.7A patent/DE102016213951A1/de not_active Withdrawn
-
2017
- 2017-06-21 EP EP17732864.8A patent/EP3491165A1/de active Pending
- 2017-06-21 US US16/319,659 patent/US20200370169A1/en not_active Abandoned
- 2017-06-21 CN CN201780045612.4A patent/CN109477209B/zh active Active
- 2017-06-21 WO PCT/EP2017/065185 patent/WO2018019482A1/de unknown
Also Published As
Publication number | Publication date |
---|---|
CN109477209B (zh) | 2021-05-14 |
CN109477209A (zh) | 2019-03-15 |
US20200370169A1 (en) | 2020-11-26 |
WO2018019482A1 (de) | 2018-02-01 |
DE102016213951A1 (de) | 2018-02-01 |
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