EP3247824A1 - Seed selection and growth methods for reduced-crack group iii nitride bulk crystals - Google Patents
Seed selection and growth methods for reduced-crack group iii nitride bulk crystalsInfo
- Publication number
- EP3247824A1 EP3247824A1 EP16703412.3A EP16703412A EP3247824A1 EP 3247824 A1 EP3247824 A1 EP 3247824A1 EP 16703412 A EP16703412 A EP 16703412A EP 3247824 A1 EP3247824 A1 EP 3247824A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- group iii
- iii nitride
- peak widths
- crystal
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims abstract description 72
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 51
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 13
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 46
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 45
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 5
- 239000000155 melt Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000008901 benefit Effects 0.000 description 8
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000007716 flux method Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000015097 nutrients Nutrition 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Definitions
- the invention relates to a bulk crystal of semiconductor material used to produce semiconductor wafers for various devices including optoelectronic devices such as light emitting diodes (LEDs) and laser diodes (LDs), and electronic devices such as transistors. More specifically, the invention provides a bulk crystal of group III nitride such as gallium nitride. The invention also provides a method of selecting seed crystals for growth of group III nitride bulk crystals.
- Gallium nitride (GaN) and its related group III nitride alloys are the key material for various optoelectronic and electronic devices such as LEDs, LDs, microwave power transistors, and solar-blind photo detectors.
- LEDs are widely used in displays, indicators, general illuminations, and LDs are used in data storage disk drives.
- heterogeneous substrates such as sapphire and silicon carbide because GaN substrates are extremely expensive compared to these heteroepitaxial substrates.
- group III nitride causes highly defected or even cracked films, which hinder the realization of high-end optical and electronic devices, such as high-brightness LEDs for general lighting or high-power microwave transistors.
- HVPE hydride vapor phase epitaxy
- this invention is intended to obtain crack-free bulk group III nitride crystals using any bulk growth method, such as growth in supercritical ammonia or from a melt of group III metals.
- the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of the seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths.
- the invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.
- FIG. 1 is an example of a process flow of this invention.
- FIG. 2 shows full width half maximum (FWHM) of 201 X-ray rocking curves from seed crystals (square dots), FWHM of 201 X-ray rocking curves from bulk GaN crystals using the corresponding seeds (diamond dots), and a photograph of a wafer sliced from the corresponding bulk GaN crystals, (a) for a seed with scattered distribution of FWHM, (b) for a seed with less scattered distribution of FWHM.
- the zero-point is at approximately the center of the seed's face along the longest line on an m-plane.
- XRD data in the examples was collected at various points across the seed crystal's face and along this line.
- the bulk crystal of the present invention is typically sliced to produce group III nitride wafers suitable for fabricating various optoelectronic and electronic devices such as LEDs, LD, transistors, and photodetectors by known techniques.
- Many optoelectronic and electronic devices are fabricated with thin films of group III nitride alloys (i.e. alloys of GaN, A1N and InN).
- the group III nitride alloys are typically expressed as GaxAl y Ini-x- y N (0 ⁇ 1, 0 ⁇ x+y ⁇ l). Since the group III metallic elements (i.e. Al, Ga, In) shows similar chemical characteristics, nitrides of these group III elements makes alloys or solid solution. In addition, crystal growth nature of these group III nitrides are quite similar.
- the device Due to limited availability and high cost of single crystalline substrates of group III nitride, these devices have been fabricated on so-called heteroepitaxial substrates such as sapphire and silicon carbide. Since the heteroepitaxial substrates are chemically and physically different from the group III nitride, the device typically has a high density of dislocations (10 8 ⁇ 10 10 cm "2 ) generated at the interface between the heteroepitaxial substrate and the device layer. Such dislocations deteriorate performance and reliability of devices, thus substrates composed of crystalline group III nitride such as GaN and A1N are favorable.
- ammonothermal growth which utilizes supercritical ammonia, has been developed.
- the ammonothermal method can produce GaN substrates with dislocation density less than 10 5 cm “2 .
- One advantage of the ammonothermal method is that bulk crystals having a thickness larger than 1 mm can be grown.
- the ammonothermal method can also be used to grow crystals having various dopants such as donors (i.e. electron), acceptors (i.e. hole) or magnetic dopants.
- donors i.e. electron
- acceptors i.e. hole
- magnetic dopants such as magnetic dopants.
- the current invention provides a method of making a bulk crystal of group III nitride in which a seed crystal is selected by (a) measuring x-ray rocking curves of the seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths.
- FIG 1 presents a process flow of this invention.
- a seed crystal for growing bulk crystal of group III nitride such as GaN is prepared.
- Seed crystal is preferably a single crystal of group III nitride such as GaN.
- the orientation of the seed crystal can be c-plane, a-plane, m-plane or other semipolar planes, although c-plane crystal is preferable.
- the single-crystal seed may be grown by hydride vapor-phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal organic vapor-phase epitaxy (MOVPE), ammonothermal growth, flux method, high-pressure solution growth or other method.
- HVPE hydride vapor-phase epitaxy
- MBE molecular beam epitaxy
- MOVPE metal organic vapor-phase epitaxy
- the seed crystal is measured with X-ray diffractometer to obtain rocking curves from more than one spot of the seed crystal.
- One example of selecting the measurement location is a straight line along one crystallographic orientation such as indirection or a-direction.
- Another example is to select points at intersections or within a square grid plotted over the seed's face.
- Another example is to take a statistically significant number of random measurements of the seed crystal's structure over the seed's face.
- off-axis diffraction such as 201 and 102 reflections is preferably used. This is because the off-axis reflections turned out to be more sensitive to the quality of the seed crystals for growing bulk crystals. Consequently, it is helpful to first determine which directions are more sensitive to crystal structure of the seed crystal for the particular seed used (e.g. c-plane, m-plane, a-plane), and then use those directions in measuring quality of crystal structure at various points across the surface of the seed.
- the particular seed used e.g. c-plane, m-plane, a-plane
- FWUM is commonly used although other methods of quantifying the peak width is also used.
- the peak width of the X-ray rocking curve represents the quality of microstructure of the crystal.
- the peak width is typically measured in the unit of arcsec, arcmin, or degree.
- statistic value such as a standard deviation can be used. Alternately, one can plot the peak width data on a graph, and visually determine the distribution of the data.
- the magnitude of data scattering can be evaluated in an absolute value with a unit of arcsec, arcmin or degree. Alternately, the magnitude of data scattering can be evaluated relative to a representative value such as a mean value of all data.
- the standard deviation is preferably less than 30% of the mean value, more preferably less than 20% of the mean value, or more preferably less than 10% of the mean value.
- the selected seed crystal will be used to grow a bulk crystal of group III nitride such as bulk GaN.
- group III nitride such as bulk GaN.
- Single crystalline GaN seed crystal having a basal plane of c-plane was prepared with HVPE.
- the thickness of the GaN seed was approximately 430 microns.
- X-ray rocking curves from 201 reflection were recorded from multiple spots of the nitrogen polar side of the seed crystal.
- the measurement was conducted along the m-direction with the spot separation of 0.5 mm.
- the peak width is quantified with FWHM in arcsec.
- the square dots in FIG. 2 (a) show FWHM at each measurement spot.
- the FWHM values have a large scattering.
- the mean value of the FWHM was 78 arcsec and the standard deviation was 29 arcsec, which was 37% of the mean value.
- the data scattering is seen throughout the scanned line.
- a bulk crystal of GaN was grown in supercritical ammonia using a high- pressure reactor.
- the chamber within the high-pressure reactor was divided into a lower part and an upper part with baffle plates.
- Approximately 15 g of poly crystalline GaN is used as a nutrient and approximately 3.1 g of sodium is used as a mineralizer.
- Mineralizer and the seed crystal were placed in the lower part of the high-pressure reactor and the nutrient was placed in the upper part of the high-pressure reactor.
- the high-pressure reactor was sealed, pumped to a vacuum and filled with anhydrous liquid ammonia.
- the volumetric ammonia fill factor was approximately 53%.
- the high-pressure reactor was heated at about 510 ⁇ 520°C to allow crystal growth of GaN on the seed.
- the resultant bulk GaN crystal has a thickness of approximately 5 mm.
- X-ray rocking curves from 201 reflection were measured at multiple spots on the surface of the grown bulk GaN crystal as described above and as described in Example 2.
- the FWHMs are plotted in FIG. 2(a) with diamond dots.
- the FWFDVIs from the grown bulk crystal also showed large scattering.
- the mean value of the FWFDVI was 89 arcsec and the standard deviation was 38 arcsec, which was 43% of the mean value.
- the bulk crystal was sliced into wafers with a multiple wire saw.
- the inset picture in FIG. 2(a) is a photograph of the sliced wafer. The wafer had numerous cracks.
- Example 2 Similar to Example 1, a c-plane GaN seed crystal was prepared with HVPE. The thickness of the GaN seed was approximately 430 microns. X-ray rocking curves from 201 reflection were recorded from multiple spots of the nitrogen polar side of the seed crystal. The measurement was conducted along a m-direction with spot separation of 0.5 mm. The peak width is quantified with FWHM in arcsec. The square dots in FIG. 2 (b) show FWHM at each measurement spot. As shown in the FIG. 2(b) the FWHM values have a small scattering. The mean value of the FWHM was 41 arcsec and the standard deviation was 7 arcsec, which was 17% of the mean value.
- the evaluation of the data scattering can be performed by combining a standard deviation, visual judgment and other criteria. For example, if we use the center portion of the data from the seed crystal in this example (FIG. 2(b)), the standard deviation can be smaller than 10% of the mean value. This way one can eliminate the edge effect of the measurement. Taking a correlation between the data scattering of the rocking curve peak width and cracking density, one can obtain a crack-free bulk crystal.
- the bulk GaN crystal obtained with the method disclosed in this invention contains no or reduced amount of cracks.
- the obtained crack-free bulk GaN crystals are sliced into wafers. These wafers are used for optical devices such as LEDs and laser diodes or electronic devices such as high-power transistors. Since cracks deteriorate performances and reliability of these devices significantly, this invention can improve the device performance and reliability.
- GaN seed crystal having thickness about 430 microns
- similar benefit of this invention can be expected for other thicknesses between 100 microns to 2000 microns.
- a bulk crystal as described, as made, or as used in any of the description above may have a thickness greater than or equal to: 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, for instance.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562106709P | 2015-01-22 | 2015-01-22 | |
PCT/US2016/014522 WO2016118862A1 (en) | 2015-01-22 | 2016-01-22 | Seed selection and growth methods for reduced-crack group iii nitride bulk crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3247824A1 true EP3247824A1 (en) | 2017-11-29 |
Family
ID=55310941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP16703412.3A Withdrawn EP3247824A1 (en) | 2015-01-22 | 2016-01-22 | Seed selection and growth methods for reduced-crack group iii nitride bulk crystals |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP3247824A1 (ja) |
JP (1) | JP6448155B2 (ja) |
KR (1) | KR102069277B1 (ja) |
CN (1) | CN107208305A (ja) |
WO (1) | WO2016118862A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9909230B2 (en) | 2006-04-07 | 2018-03-06 | Sixpoint Materials, Inc. | Seed selection and growth methods for reduced-crack group III nitride bulk crystals |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL207400B1 (pl) * | 2001-06-06 | 2010-12-31 | Ammono Społka Z Ograniczoną Odpowiedzialnością | Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal |
US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
PL368483A1 (en) * | 2004-06-11 | 2005-12-12 | Ammono Sp.Z O.O. | Monocrystals of nitride containing gallium and its application |
JP4277826B2 (ja) * | 2005-06-23 | 2009-06-10 | 住友電気工業株式会社 | 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
JP4518209B1 (ja) * | 2009-09-07 | 2010-08-04 | 住友電気工業株式会社 | Iii族窒化物結晶基板、エピ層付iii族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
US20100095882A1 (en) * | 2008-10-16 | 2010-04-22 | Tadao Hashimoto | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
EP2004882A2 (en) * | 2006-04-07 | 2008-12-24 | The Regents of the University of California | Growing large surface area gallium nitride crystals |
PL2016209T3 (pl) * | 2006-05-08 | 2011-06-30 | Freiberger Compound Mat Gmbh | Sposób wytwarzania objętościowego kryształu III-N i swobodnego podłoża III-N oraz objętościowy kryształ III-N i swobodne podłoże III-N |
CN101583745B (zh) * | 2006-11-14 | 2012-07-25 | 国立大学法人大阪大学 | GaN晶体的制造方法、GaN晶体、GaN晶体基板、半导体装置及GaN晶体制造装置 |
JP2009091175A (ja) * | 2007-10-04 | 2009-04-30 | Sumitomo Electric Ind Ltd | GaNエピタキシャル基板、半導体デバイス、GaNエピタキシャル基板及び半導体デバイスの製造方法 |
JP5303941B2 (ja) * | 2008-01-31 | 2013-10-02 | 住友電気工業株式会社 | AlxGa1−xN単結晶の成長方法 |
JP5431359B2 (ja) * | 2008-06-04 | 2014-03-05 | シックスポイント マテリアルズ, インコーポレイテッド | 最初のiii族−窒化物種晶からの熱アンモニア成長による改善された結晶性のiii族−窒化物結晶を生成するための方法 |
US8598685B2 (en) * | 2009-09-04 | 2013-12-03 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof |
JP4835749B2 (ja) * | 2009-12-18 | 2011-12-14 | 住友電気工業株式会社 | Iii族窒化物結晶基板、エピ層付iii族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
JP2013060344A (ja) * | 2011-09-14 | 2013-04-04 | Ricoh Co Ltd | 窒化ガリウム結晶、13族窒化物結晶の製造方法および13族窒化物結晶基板 |
WO2013058350A1 (ja) * | 2011-10-21 | 2013-04-25 | 三菱化学株式会社 | 周期表第13族金属窒化物半導体結晶の製造方法、及び該製造方法により製造される周期表第13族金属窒化物半導体結晶 |
US10145026B2 (en) * | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
JP2014009156A (ja) * | 2012-06-29 | 2014-01-20 | Samsung Corning Precision Materials Co Ltd | 窒化ガリウム基板の製造方法および該方法により製造された窒化ガリウム基板 |
-
2016
- 2016-01-22 EP EP16703412.3A patent/EP3247824A1/en not_active Withdrawn
- 2016-01-22 JP JP2017538419A patent/JP6448155B2/ja active Active
- 2016-01-22 KR KR1020177023443A patent/KR102069277B1/ko active IP Right Grant
- 2016-01-22 WO PCT/US2016/014522 patent/WO2016118862A1/en active Application Filing
- 2016-01-22 CN CN201680006774.2A patent/CN107208305A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2016118862A1 (en) | 2016-07-28 |
KR20170121182A (ko) | 2017-11-01 |
JP6448155B2 (ja) | 2019-01-09 |
JP2018504355A (ja) | 2018-02-15 |
KR102069277B1 (ko) | 2020-01-22 |
CN107208305A (zh) | 2017-09-26 |
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