EP3190138A4 - Polymère hyper-ramifié, son procédé de production, et composition - Google Patents

Polymère hyper-ramifié, son procédé de production, et composition Download PDF

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Publication number
EP3190138A4
EP3190138A4 EP15838569.0A EP15838569A EP3190138A4 EP 3190138 A4 EP3190138 A4 EP 3190138A4 EP 15838569 A EP15838569 A EP 15838569A EP 3190138 A4 EP3190138 A4 EP 3190138A4
Authority
EP
European Patent Office
Prior art keywords
composition
hyperbranched polymer
producing same
hyperbranched
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15838569.0A
Other languages
German (de)
English (en)
Other versions
EP3190138A1 (fr
EP3190138B1 (fr
Inventor
Hiroto Kudo
Ichiro Takase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daicel Corp
Kansai University
Original Assignee
Daicel Corp
Kansai University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daicel Corp, Kansai University filed Critical Daicel Corp
Publication of EP3190138A1 publication Critical patent/EP3190138A1/fr
Publication of EP3190138A4 publication Critical patent/EP3190138A4/fr
Application granted granted Critical
Publication of EP3190138B1 publication Critical patent/EP3190138B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/002—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from unsaturated compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • C08G83/002—Dendritic macromolecules
    • C08G83/005—Hyperbranched macromolecules
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
    • C08G2261/312—Non-condensed aromatic systems, e.g. benzene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
    • C08G2261/334—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing heteroatoms
    • C08G2261/3342—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing heteroatoms derived from cycloolefins containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/36—Oligomers, i.e. comprising up to 10 repeat units
    • C08G2261/364—Oligomers, i.e. comprising up to 10 repeat units containing hetero atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
    • C08G2650/30—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type branched

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polyethers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
EP15838569.0A 2014-09-02 2015-07-31 Polymère hyper-ramifié, son procédé de production, et composition Active EP3190138B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014178532 2014-09-02
JP2015124535 2015-06-22
PCT/JP2015/071833 WO2016035491A1 (fr) 2014-09-02 2015-07-31 Polymère hyper-ramifié, son procédé de production, et composition

Publications (3)

Publication Number Publication Date
EP3190138A1 EP3190138A1 (fr) 2017-07-12
EP3190138A4 true EP3190138A4 (fr) 2018-04-11
EP3190138B1 EP3190138B1 (fr) 2019-10-16

Family

ID=55439559

Family Applications (1)

Application Number Title Priority Date Filing Date
EP15838569.0A Active EP3190138B1 (fr) 2014-09-02 2015-07-31 Polymère hyper-ramifié, son procédé de production, et composition

Country Status (7)

Country Link
US (1) US10303051B2 (fr)
EP (1) EP3190138B1 (fr)
JP (1) JP6792769B2 (fr)
KR (1) KR102389109B1 (fr)
CN (2) CN106795279B (fr)
TW (1) TWI659980B (fr)
WO (1) WO2016035491A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108257860A (zh) * 2018-01-19 2018-07-06 武汉新芯集成电路制造有限公司 一种栅极氧化层的制作方法
CN109679112B (zh) * 2019-01-15 2021-08-27 西北师范大学 一种超分子聚合物及其荧光识别氢氧根离子、二氧化碳气体的应用
CN109765755A (zh) * 2019-01-25 2019-05-17 武汉华星光电半导体显示技术有限公司 一种光刻胶及其制备方法
EP4110757A4 (fr) * 2020-02-27 2024-06-05 Univ Maryland Pillararènes sulfatés, leurs procédés de fabrication et leurs utilisations
CN111423365B (zh) * 2020-04-03 2020-11-20 华东师范大学 一种双官能团柱芳烃衍生物配体及金属有机笼和制备方法
WO2022049911A1 (fr) * 2020-09-01 2022-03-10 Jsr株式会社 Composition de résine sensible au rayonnement et procédé de formation de motif
CN114031946B (zh) * 2021-10-20 2023-04-07 安徽大学 光子晶体薄膜及其制备方法和应用
CN115322364B (zh) * 2022-09-23 2023-06-09 福州大学 一种超低介电常数柱[5]芳烃型含氟聚芳醚化合物及其制备方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2011219752A (ja) * 2010-03-26 2011-11-04 Sumitomo Chemical Co Ltd 樹脂及びレジスト組成物
EP2599814A1 (fr) * 2010-07-30 2013-06-05 Mitsubishi Gas Chemical Company, Inc. Composé, composition sensible au rayonnement et procédé de formation d'un motif de résist

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US2599814A (en) * 1943-06-19 1952-06-10 Cull William Hydromechanical power transmission drive
KR100733536B1 (ko) 2000-07-19 2007-06-28 신에쓰 가가꾸 고교 가부시끼가이샤 화학 증폭 포지티브형 레지스트 재료
JP3956088B2 (ja) 2000-07-19 2007-08-08 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP2003257236A (ja) * 2002-02-27 2003-09-12 Nippon Zeon Co Ltd 高分子固体電解質
WO2005030711A2 (fr) * 2003-08-06 2005-04-07 Covalent Partners Llc Compositions modulaires macrocycliques pontees
KR101157287B1 (ko) 2004-01-08 2012-06-15 도꾜 다이가꾸 가교 폴리로탁산을 갖는 화합물 및 그의 제조 방법
US7754818B2 (en) * 2005-01-11 2010-07-13 Brewer Science Inc. Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers
JP2007241121A (ja) 2006-03-10 2007-09-20 Lion Corp 極端紫外線用レジスト組成物
JP5629490B2 (ja) * 2009-04-30 2014-11-19 Jsr株式会社 芳香族化合物
JP2011231074A (ja) * 2010-04-28 2011-11-17 Jsr Corp カリックスアレーン系化合物及びその製造方法
JP5812914B2 (ja) * 2012-03-27 2015-11-17 Jsr株式会社 レジスト組成物
JP6304644B2 (ja) * 2013-05-13 2018-04-04 学校法人 関西大学 ハイパーブランチポリマー
US20150266986A1 (en) * 2014-03-20 2015-09-24 National University Of Ireland, Galway Multifunctional Hyperbranched Polymers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011219752A (ja) * 2010-03-26 2011-11-04 Sumitomo Chemical Co Ltd 樹脂及びレジスト組成物
EP2599814A1 (fr) * 2010-07-30 2013-06-05 Mitsubishi Gas Chemical Company, Inc. Composé, composition sensible au rayonnement et procédé de formation d'un motif de résist

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KUDO H. ET AL: "Extreme Ultraviolet (EUV)-Resist Materials of Noria (Water Wheel-Like Cyclic Oligomer) Derivatives containing Acetal Moieties", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 23, no. 5, 7 May 2010 (2010-05-07), pages 657 - 664, XP002778244, DOI: 10.2494/photopolymer.23.657 *
KUDO H. ET AL: "Synthesis and Resist Properties of Hyperbranched Polyacetals.", JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, vol. 28, no. 2, 27 April 2015 (2015-04-27), pages 125 - 129, XP002778243, DOI: 10.2494/photopolymer.28.125 *
See also references of WO2016035491A1 *

Also Published As

Publication number Publication date
JPWO2016035491A1 (ja) 2017-07-06
EP3190138A1 (fr) 2017-07-12
US20170283560A1 (en) 2017-10-05
KR102389109B1 (ko) 2022-04-21
TWI659980B (zh) 2019-05-21
EP3190138B1 (fr) 2019-10-16
JP6792769B2 (ja) 2020-12-02
KR20170049545A (ko) 2017-05-10
WO2016035491A1 (fr) 2016-03-10
CN106795279B (zh) 2019-05-07
CN110066386A (zh) 2019-07-30
TW201630973A (zh) 2016-09-01
US10303051B2 (en) 2019-05-28
CN106795279A (zh) 2017-05-31

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