EP2744127A1 - Signal transmission device, reception circuit, and electronic device - Google Patents

Signal transmission device, reception circuit, and electronic device Download PDF

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Publication number
EP2744127A1
EP2744127A1 EP11870732.2A EP11870732A EP2744127A1 EP 2744127 A1 EP2744127 A1 EP 2744127A1 EP 11870732 A EP11870732 A EP 11870732A EP 2744127 A1 EP2744127 A1 EP 2744127A1
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EP
European Patent Office
Prior art keywords
channel
gain
signal
processing unit
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11870732.2A
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German (de)
English (en)
French (fr)
Inventor
Yasufumi Hino
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Sony Corp
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Sony Corp
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Publication date
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Publication of EP2744127A1 publication Critical patent/EP2744127A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H04B10/2589—Bidirectional transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J1/00—Frequency-division multiplex systems
    • H04J1/02—Details
    • H04J1/12—Arrangements for reducing cross-talk between channels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
    • H04B1/1027—Means associated with receiver for limiting or suppressing noise or interference assessing signal quality or detecting noise/interference for the received signal
    • H04B1/1036—Means associated with receiver for limiting or suppressing noise or interference assessing signal quality or detecting noise/interference for the received signal with automatic suppression of narrow band noise or interference, e.g. by using tuneable notch filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B3/00—Line transmission systems
    • H04B3/52—Systems for transmission between fixed stations via waveguides
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J1/00—Frequency-division multiplex systems
    • H04J1/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/14—Two-way operation using the same type of signal, i.e. duplex
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L5/00—Arrangements affording multiple use of the transmission path
    • H04L5/14—Two-way operation using the same type of signal, i.e. duplex
    • H04L5/16—Half-duplex systems; Simplex/duplex switching; Transmission of break signals non-automatically inverting the direction of transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L25/00—Baseband systems
    • H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
    • H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
    • H04L25/03006—Arrangements for removing intersymbol interference
    • H04L2025/0335—Arrangements for removing intersymbol interference characterised by the type of transmission
    • H04L2025/03426—Arrangements for removing intersymbol interference characterised by the type of transmission transmission using multiple-input and multiple-output channels

Definitions

  • the present invention relates to a signal transmission device, a receiving circuit, and an electronic apparatus, and more specifically, to technology for addressing mutual interference when multichannel transmission is performed.
  • LVDS low voltage differential signaling
  • problems such as an increase of power consumption, an increase of signal distortion effects due to reflection or the like, and an increase of unnecessary radiation occur.
  • LVDS has reached a limitation when signals such as an image signal (including an imaging signal) or a computer image are transmitted in the apparatus at a high speed (in real time).
  • FDM frequency division multiplexing
  • CH channel
  • mutual interference or an "interference problem between channels.”
  • interference problem between adjacent channels when two channels are adjacent to each other.
  • a method in which a frequency between channels is separated to have a certain difference or higher is employed.
  • the frequency is separated (that is, as a frequency difference between channels becomes higher)
  • a required frequency band as a whole increases.
  • a wideband characteristic is necessary not only for a communication device or a communication semiconductor device (chip) but also for the waveguide.
  • the invention has been made in view of the aforementioned problems and the invention provides technology capable of reducing an interference problem with another channel without employing a method of increasing a frequency difference between channels.
  • a signal transmission device includes a reception processing unit for each channel, which enables multichannel transmission by dividing a frequency band, and the number of channels is equal to or greater than three in total.
  • a signal suppressing unit configured to suppress a signal component of a channel other than a self channel is provided in any reception processing unit.
  • the reception processing unit may include an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit may include a gain suppressing unit provided in the amplifier.
  • the gain suppressing unit in any combination of two channels, when the full-duplex two-way communication is applied, the gain suppressing unit is configured to suppress a gain of a channel, other than the self channel, having an insufficient attenuation degree in a gain frequency characteristic.
  • the gain suppressing unit is configured to suppress a gain of either lower-side or upper-side adjacent channel that has an inefficient attenuation degree in the gain frequency characteristic.
  • signal transmission device includes a reception processing unit for each channel, which enables multichannel transmission by dividing a frequency band, and the number of channels is equal to or greater than two in total.
  • the signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided in any reception processing unit.
  • a receiving circuit includes a signal suppressing circuit configured to suppress a signal component of a channel other than the self channel when the number of channels is equal to or greater than three in total and the full-duplex two-way communication is applied in any combination of two channels.
  • a receiving circuit includes a signal suppressing circuit configured to suppress a signal component of a channel other than the self channel when the simplex two-way communication is applied in any combination of two channels.
  • an electronic apparatus includes a reception processing unit for each channel, which enables multichannel transmission by dividing a frequency band, and the number of channels is equal to or greater than three in total.
  • a signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided in any reception processing unit.
  • an electronic apparatus includes a reception processing unit for each channel, which enables multichannel transmission by dividing a frequency band, and the number of channels is equal to or greater than two in total.
  • a signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided in any reception processing unit.
  • the reception processing unit may include an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit may include a gain suppressing unit provided in amplifier.
  • the gain suppressing unit in any combination of two channels, when the simplex two-way communication is applied, is configured to suppress a gain of a channel other than the self channel having an insufficient attenuation degree in the gain frequency characteristic.
  • the gain suppressing unit in a combination of two channels which are adjacent to each other, the gain suppressing unit may be configured to suppress a gain of either lower-side or upper-side adjacent channel that has an insufficient attenuation degree in the gain frequency characteristic.
  • the signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided in the amplifier or a pre-stage or a post-stage of the amplifier circuit.
  • the signal suppressing unit includes the gain suppressing unit provided in the amplifier.
  • the gain suppressing unit configured to suppress a gain of a channel other than the self channel having an insufficient attenuation degree in the gain frequency characteristic is provided in the amplifier or the amplifier circuit.
  • the gain suppressing unit configured to suppress a gain of either lower-side or upper-side adjacent channel that has an insufficient attenuation degree in the gain frequency characteristic is provided in the amplifier or the amplifier circuit.
  • the gain suppressing unit may be applied to the amplifier or the amplifier circuit according to the above condition only when the full-duplex two-way communication is applied (in addition, channels are preferably adjacent to each other) according to the above condition.
  • the number of channels is equal to or greater than three in total.
  • the signal suppressing unit or the gain suppressing unit may be provided according to the above condition only when the simplex two-way communication is applied (in addition, channels are preferably adjacent to each other).
  • the receiving circuit according to the fourth aspect of the present disclosure, and the electronic apparatus according to the sixth aspect of the present disclosure the number of channels is equal to or greater than two in total.
  • the signal suppressing unit or the gain suppressing unit may be provided according to the above condition only when both of the full-duplex two-way communication and the simplex two-way communication are applied (in addition, channels are preferably adjacent to each other).
  • the signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided in any reception processing unit (for example, inside the amplifier or the amplifier circuit, or a pre-stage or a post-stage thereof).
  • the gain suppressing unit is provided in "any" reception processing unit rather than in all of the plurality of reception processing units, and thus mutual interference is suppressed. Accordingly, a simpler configuration than when the signal suppressing unit configured to suppress a signal component of another channel is provided in all of the plurality of reception processing units is possible.
  • the signal suppressing unit is used, it is possible to suppress an interfering wave influence. Therefore, without setting a frequency interval with another channel more than necessary, it is possible to reduce the interference problem with another channel and effectively use the frequency.
  • the gain suppressing unit configured to suppress a gain of "either lower-side or upper-side adjacent channel that has an insufficient attenuation degree in the gain frequency characteristic" is provided in the reception processing unit.
  • the gain suppressing unit is provided inside the amplifier or the amplifier circuit, or a pre-stage or a post-stage thereof. More preferably, the gain suppressing unit is provided inside the amplifier or the amplifier circuit.
  • the gain suppressing unit when the gain suppressing unit is not provided (hereinafter referred to as an "open-loop"), it is assumed that the gain frequency characteristic of the amplifier or the amplifier circuit is symmetrical in a lower side (low frequency side) and an upper side (high frequency side) with respect to a desired channel (self channel).
  • the gain frequency characteristics is "asymmetrical,” a gain attenuation degree is sufficient in either the lower side (low frequency side) or the upper side (high frequency side), and a gain attenuation degree is insufficient in the other side.
  • the gain attenuation degree is sufficient in either the upper-side or lower-side adjacent channel, whereas the gain attenuation degree is insufficient in the other side.
  • there is a problem of interference particularly, it is also referred to as "adjacent interference" when channels are adjacent to each other from a channel having an insufficient gain attenuation degree.
  • an asymmetric open-loop gain frequency characteristic of the amplifier or the amplifier circuit is used, and thus the gain suppressing unit is provided in only either (specifically, a channel having an insufficient attenuation degree in the gain frequency characteristic) the lower side (low frequency side) channel or the upper side (high frequency side) channel.
  • the gain suppressing unit is provided in either (a channel having an insufficient attenuation degree in the gain frequency characteristic) the upper-side or lower-side adjacent channel.
  • the gain suppressing unit when the open-loop gain frequency characteristic of the amplifier or the amplifier circuit is asymmetrical in the lower or upper side of the desired channel, the gain suppressing unit is provided in only a side having an insufficient attenuation degree against interference with another channel, and thus mutual interference is suppressed. Accordingly, a simpler configuration than when the gain suppressing unit is provided in both (typically, both of the upper-side and lower-side adjacent channels) of the lower side (low frequency side) channel and the upper side (high frequency side) channel is possible.
  • the gain suppressing unit since it is possible to suppress the interfering wave influence without setting a frequency interval with another channel (typically, an adjacent channel) more than necessary, it is possible to reduce the interference problem from another channel and effectively use the frequency.
  • the receiving circuits according to the third and fourth aspects, and the electronic apparatuses according to the fifth and sixth aspects of the present disclosure it is possible to reduce the interference problem with another channel without employing a method of increasing a frequency difference between channels in a simple configuration.
  • a receiving circuit includes a plurality of reception processing units configured to receive a transmission signal.
  • a plurality of transmission processing units are provided to correspond to the plurality of reception processing units.
  • a reception processing unit is provided for each channel.
  • a transmission processing unit is provided for each channel so as to correspond to the reception processing unit provided for each channel.
  • Any reception processing unit includes a signal suppressing unit configured to suppress a signal component of a channel other than the self channel. It is possible to reduce the interference problem with another channel in a simple configuration compared to when all reception processing units have the signal suppressing unit.
  • the reception processing unit includes an amplifier (amplifier circuit) configured to have frequency selectivity for the self channel and amplify a received signal.
  • An open-loop gain frequency characteristic of the amplifier is asymmetrical between a lower side (low frequency side) and an upper side (high frequency side) with respect to a desired channel (self channel).
  • this asymmetric characteristic is used, and in any of the plurality of reception processing units, a gain suppressing unit configured to suppress a gain of an interfering wave is provided in the amplifier (amplifier circuit). That is, the signal suppressing unit includes the gain suppressing unit provided in the amplifier.
  • the gain suppressing unit When there is an influence from a channel (not limited to channels adjacent on either side but including other more distant channels: collectively called an "interference channel") other than the self channel, the influence of the interference channel is suppressed by the gain suppressing unit.
  • the influence from the adjacent channel is suppressed.
  • the gain suppressing unit configured to suppress a gain of either lower-side or upper-side adjacent channel which has an insufficient attenuation degree in a gain frequency characteristic is provided in the amplifier. That is, when the gain suppressing unit is not provided, the asymmetric open-loop gain frequency characteristic of the amplifier is actively used, and thus the gain suppressing unit, such as a trap circuit, is provided for an adjacent channel having an insufficient gain attenuation degree.
  • an open-loop gain frequency characteristic for one channel amplifier and an open-loop gain frequency characteristic for the other channel amplifier may have an equal asymmetric state and a mixed asymmetric state. That is, there are four combination cases in total.
  • the open-loop gain frequency characteristic for one channel amplifier is in the first state and the open-loop gain frequency characteristic for the other channel amplifier is also in the first state.
  • the open-loop gain frequency characteristic for one channel amplifier is in the second state and the open-loop gain frequency characteristic for the other channel amplifier is also in the second state.
  • the open-loop gain frequency characteristic for one channel amplifier is in the second state and the open-loop gain frequency characteristic for the other channel amplifier is in the first state.
  • the open-loop gain frequency characteristic for one channel amplifier is in the first state and the open-loop gain frequency characteristic for the other channel amplifier is in the second state.
  • the gain suppressing unit when the gain suppressing unit is provided in the amplifier, the gain suppressing unit is provided in a required channel amplifier such that "a gain of a channel having an insufficient attenuation degree in the gain frequency characteristic is suppressed" for each of the above four combinations.
  • the gain suppressing unit may be provided only in a high frequency channel amplifier.
  • the gain suppressing unit may suppress a gain of a low frequency channel serving as a lower-side adjacent channel.
  • the gain suppressing unit may be provided only in the low frequency channel amplifier.
  • the gain suppressing unit may suppress a gain of a high frequency channel serving as an upper-side adjacent channel. It is unnecessary to provide the gain suppressing unit in the high frequency channel amplifier.
  • the gain suppressing unit configured to suppress a gain of a channel may be provided only in either channel amplifier.
  • the open-loop gain frequency characteristic of the low frequency channel amplifier is in the second state in which a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel
  • the open-loop gain frequency characteristic of the high frequency channel amplifier is in the first state in which a low frequency side has more insufficient gain attenuation than a high frequency side with respect to the self channel. Therefore, a gain suppressing unit configured to suppress a gain of an upper-side adjacent channel is provided in the low frequency channel amplifier, and a gain suppressing unit configured to suppress a gain of a lower-side adjacent channel is provided in the high frequency channel amplifier.
  • the open-loop gain frequency characteristic of the low frequency channel amplifier is in first state in which a low frequency side has more insufficient gain attenuation than a high frequency side with respect to the self channel, and the open-loop gain frequency characteristic of the high frequency channel amplifier is in second state in which a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel.
  • a gain attenuation degree for the high frequency channel serving as an upper-side adjacent channel is sufficient.
  • a gain attenuation degree for the low frequency channel serving as a lower-side adjacent channel is sufficient. In this way, in the fourth case, since a gain attenuation degree for the other channel is sufficient (an attenuation degree is sufficient) in both channels, it is unnecessary to provide the gain suppressing unit configured to suppress a gain of the other channel in both channels.
  • the number of channels is equal to or greater than three in total, further combinations of channels are included.
  • the combination is determined as one of the aforementioned four cases. Based on a determination result, it may be determined whether the gain suppressing unit is necessary, and when the gain suppressing unit is provided, it may be determined that a gain of either channel is suppressed.
  • the gain suppressing unit is provided in the amplifier according to the above method only when the full-duplex two-way communication is applied and channels are adjacent to each other.
  • the gain suppressing unit is provided in the amplifier according to the above method only when the simplex two-way communication is applied and channels are adjacent to each other.
  • the receiving circuit, or the electronic apparatus disclosed in the specification when both of the full-duplex two-way communication and the simplex two-way communication are applied, preferably, the above methods for the full-duplex two-way communication and the simplex two-way communication are combined. In addition, when both full-duplex two-way communication and simplex two-way communication are applied, it is unnecessary to combine the above method for simplex two-way communication. The reason is as follows.
  • a leakage path may be formed such that a high frequency signal leaks almost directly from a self transmission processing unit to a reception processing unit. Energy thereof is greater than that in a leakage path in which energy leaks into a reception processing unit of the other side communication device through a waveguide. This is based on a difference of whether or not there is an influence from transmission loss of the waveguide interposed between the transmission processing unit and the reception processing unit.
  • a high frequency signal is transmitted from the transmission processing unit of one communication device to the reception processing unit of the other communication device through the waveguide.
  • a leakage path in which a high frequency signal leaks not only into a reception processing unit for the self channel but also into a reception processing unit for another may be formed.
  • received energy is less than energy in a leakage path from the self transmission processing unit to the reception processing unit, which is formed when the full-duplex two-way communication is applied. This is because reception-side energy decreases due to transmission loss of the waveguide that couples one communication device and the other communication device. Therefore, in some cases, it is unnecessary to apply the method for simplex two-way communication.
  • the receiving circuit, or the electronic apparatus disclosed in the specification providing the gain suppressing unit in the amplifier may be applicable to a case of two channels, in principle, regardless of whether the full-duplex two-way communication or the simplex two-way communication is applied.
  • a minimum value of the number of channels is "two" in total.
  • the number of channels is equal to or greater than three in total and the simplex two-way communication is not applied but the full-duplex two-way communication is applied.
  • the method for full-duplex two-way communication is applied in any combination of two channels.
  • the method for full-duplex two-way communication is applied in any combination of two channels.
  • the methods for full-duplex two-way communication and simplex two-way communication are combined.
  • a minimum value of the number of channels is "three" in total.
  • the method for full-duplex two-way communication is applied.
  • the method for simplex two-way communication is applied.
  • the method for full-duplex two-way communication is applied.
  • the method for simplex two-way communication is applied.
  • an open-loop gain frequency characteristic of the amplifier is asymmetrical such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel.
  • Two channels to be combined belong to the second case. Therefore, in an exemplary embodiment of the signal transmission device, the receiving circuit, or the electronic apparatus disclosed in the specification, this asymmetrical feature is used and thus the amplifier may include the gain suppressing unit only for an upper-side adjacent channel.
  • a carrier frequency of a second channel is set higher than that of a first channel.
  • a carrier frequency of a third channel is set higher than that of the second channel.
  • the first communication device includes the first channel transmission processing unit, the second channel reception processing unit, and the third channel transmission processing unit
  • the second communication device includes the first channel reception processing unit, the second channel transmission processing unit, and the third channel reception processing unit.
  • the full-duplex two-way communication may be considered to be applied in a combination of second and first channels, and a combination of second and third channels.
  • a leakage path from the second channel transmission processing unit to the first channel reception processing unit in the second communication device side and a leakage path from the third channel transmission processing unit to the second channel reception processing unit in the first communication device side may cause the interference problem between adjacent channels.
  • the gain suppressing unit configured to suppress a gain of the second channel is provided in the amplifier of the first channel reception processing unit, and in the first communication device, the gain suppressing unit configured to suppress a gain of the third channel is provided in the amplifier of the second channel reception processing unit.
  • the first communication device includes the first channel transmission processing unit, the second channel transmission processing unit, and the third channel reception processing unit
  • the second communication device includes the first channel reception processing unit, the second channel reception processing unit, and the third channel transmission processing unit.
  • the full-duplex two-way communication may be considered to be applied in a combination of third and first channels, and a combination of third and second channels.
  • a leakage path from the third channel transmission processing unit to the second channel reception processing unit may cause the interference problem between adjacent channels.
  • the gain suppressing unit configured to suppress a gain of the third channel is provided in the amplifier of the second channel reception processing unit.
  • the first communication device includes the first channel transmission processing unit, the second channel transmission processing unit, and the third channel reception processing unit
  • the second communication device includes the first channel reception processing unit, the second channel reception processing unit, and the third channel transmission processing unit.
  • the full-duplex two-way communication may be considered to be applied in a combination of first and second channels and a combination of first and third channels.
  • a leakage path from the second channel transmission processing unit to the first channel reception processing unit may cause the interference problem between adjacent channels.
  • the gain suppressing unit configured to suppress a gain of the second channel is provided in the amplifier of the first channel reception processing unit.
  • the simplex two-way communication may be further applied to these three aspects.
  • the simplex two-way communication may be applied in the combination of first and third channels.
  • a leakage path is formed between the first and second communication devices when transmission and reception are performed through the waveguide.
  • a leakage path from the third channel transmission processing unit in the first communication device side to the first channel reception processing unit in the second communication device side is formed, and a leakage path from the first channel transmission processing unit in the first communication device to the third channel reception processing unit in the second communication device side is formed. Since the channels forming the leakage path are not adjacent to each other, the interference problem between adjacent channels may not occur.
  • the gain suppressing unit configured to suppress a gain of an adjacent channel in either amplifier. That is, even when the simplex two-way communication is combined, the first aspect in which the full-duplex two-way communication is applied may be applied without change.
  • the simplex two-way communication when the simplex two-way communication is combined, the simplex two-way communication may be applied in the combination of first and second channels. Accordingly, a leakage path from the second channel transmission processing unit in the first communication device side to the first channel reception processing unit in the second communication device side is formed, and a leakage path from the first channel transmission processing unit in the first communication device side to the second channel reception processing unit in the second communication device side is formed. Since the channels forming the leakage path are adjacent to each other, the interference problem between adjacent channels may occur. As a countermeasure thereof, when the simplex two-way communication is combined, in the second communication device, the gain suppressing unit configured to suppress a gain of the second channel is provided in the amplifier of the first channel reception processing unit (add).
  • the gain suppressing unit configured to suppress a gain of the third channel is provided in the amplifier of the second channel reception processing unit.
  • the simplex two-way communication when the simplex two-way communication is combined with the third aspect, the simplex two-way communication may be applied in the combination of the second and third channels. Accordingly, a leakage path from the third channel transmission processing unit in the first communication device side to the second channel reception processing unit in the second communication device side is formed, and a leakage path from the second channel transmission processing unit in the first communication device side to the third channel reception processing unit in the second communication device side is formed. Since the channels forming the leakage path are adjacent to each other, the interference problem between adjacent channels may occur. As a countermeasure thereof, when the simplex two-way communication is combined, in the second communication device, the gain suppressing unit configured to suppress a gain of the third channel is provided (added) in the amplifier of the second channel reception processing unit.
  • the gain suppressing unit configured to suppress a gain of the second channel is provided in the amplifier of the first channel reception processing unit.
  • the signal suppressing unit may suppress a signal component of a channel other than the self channel, and the gain suppressing unit may suppress a gain of a channel other than the self channel.
  • various circuit configurations such as a trap circuit may be employed. This can be applied regardless of whether the full-duplex two-way communication or the simplex two-way communication is applied.
  • the trap circuit a serial or parallel resonance circuit composed of an inductor and a capacitor, or a serial-parallel resonance circuit according to any combination thereof may be used. Although types of the trap circuit are dependent on a configuration of the amplifier to which the gain suppressing unit is added, the serial or parallel resonance circuit has the simplest configuration.
  • the gain suppressing unit may employ various circuit configurations in order to compensate for insufficient attenuation due to the asymmetric gain frequency characteristic. That is, an exemplary embodiment of the gain suppressing unit may be simply configured such that attenuation is not shown for a desired wave component and attenuation is shown only for an adjacent channel serving as an interfering wave (undesired wave) component. For example, the trap circuit may be used.
  • the inductor and the capacitor which compose the trap circuit may be formed as a lumped parameter circuit by forming a coil-shaped pattern, but the invention is not limited thereto.
  • a pattern such as a microstripline may be formed and a distributed constant circuit shape may be used.
  • a distributed capacity when pattern formation of the inductor is performed as a capacitor component.
  • the amplifier may preferably include two cascade-connected transistors and an amplifier stage having an inductor in which a constant is set to have frequency selectivity for the self channel as a load.
  • This configuration may be applied regardless of whether the full-duplex two-way communication or the simplex two-way communication is applied.
  • the gain suppressing unit may be connected between a cascade connection point of two transistors and a reference potential point, and the serial resonance circuit may be used when the trap circuit is used as the gain suppressing unit. That is, it is preferable that the amplifier be composed as a cascade amplifier, and the trap circuit composed of the serial resonance circuit be provided between the cascade connection point and the reference potential point.
  • a dual-gate MOSFET structure In order to implement such a cascade amplifier configuration in a semiconductor integrated circuit such as a CMOS, it is preferable to use a dual-gate MOSFET structure.
  • a pattern may be designed to achieve gain up.
  • a pattern is formed in a plurality of wiring layers, inductors in each layer are connected in parallel through an electric circuit, and thus a series resistance component of the inductor may be reduced.
  • the amplifier may be formed in a complementary metal oxide semiconductor.
  • the amplifier include a plurality of amplifier stages. That is, when the amplifier is composed of cascade amplifiers, it is preferable that the number of cascade amplifier stages be plural.
  • the gain suppressing unit may be provided in a first amplifier stage focusing on linearity or may be provided in at least one amplifier stage other than the first stage focusing on noise performance.
  • the gain suppressing unit may be provided in the first amplifier stage and may also be provided in at least one amplifier stage other than the first stage.
  • a switch may be provided to selectively use the gain suppressing unit. In this way, it is possible to distinguishably use the gain suppressing unit of the first stage or the gain suppressing unit other than the first stage using the switch.
  • the switch is provided in both units, it is possible to arbitrarily distinguishably use the gain suppressing unit of the first stage and the gain suppressing unit other than the first stage.
  • a gap between the transmission processing unit and the reception processing unit may be coupled by the waveguide that is made of a dielectric material. That is, the transmission or reception processing unit for each channel is disposed in either of the first or the second communication device so as to perform multichannel transmission, and a gap between the first and second communication devices is coupled by the waveguide.
  • the waveguide may be made of a magnetic material or a dielectric material such as plastic.
  • the waveguide made of the dielectric material is preferable in terms of flexibility, cost, availability, manufacturability, or the like. This may apply regardless of whether the full-duplex two-way communication or the simplex two-way communication is applied.
  • the receiving circuit or the electronic apparatus capable of being used in combination with the signal transmission device disclosed in the specification, for example, the waveguide made of the dielectric material or the magnetic material is disposed inside a case, a gap between the communication devices is coupled by the waveguide, and thus high frequency signal communication is performed through the waveguide.
  • high speed data transmission is performed in communication inside the apparatus or in communication between apparatuses by reducing multipath, transmission degradation, unnecessary degradation, or the like. This may apply regardless of whether the full-duplex two-way communication or the simplex two-way communication is applied.
  • an arrangement of the waveguide and a transmission path coupling unit may allow a considerable degree of error (several millimeters to several centimeters) rather than specifying a pin arrangement or a contact position as an electric wire connector.
  • a transmission path coupling unit a transmission structure having a high frequency signal transmission function, also referred to as a coupler
  • a considerable degree of error severe millimeters to several centimeters
  • power of a transmitter may be reduced, and thus a reception-side configuration may be simplified. It is also possible to suppress electric wave interference from outside the apparatus or radiation to the outside of the apparatus.
  • a transmission target signal is converted into a high frequency signal such as a millimeter-wave band and is transmitted, high speed transmission may be possible.
  • a high frequency signal such as a millimeter-wave band and is transmitted
  • the dielectric material such as an easily available plastic may be used for the waveguide, and thus it is possible to configure the signal transmission device and the electronic apparatus at a low cost. Since a high frequency signal is trapped in the waveguide, an influence of multipath decreases and an EMC problem decreases.
  • a high frequency signal of an electric wave frequency band such as a millimeter-wave band
  • wireless communication technology may be applied. Therefore, it is possible to address a problem of the electric wire and to build a simpler and less expensive signal interface configuration than when the light is used. In terms of a size and a cost, it is more advantageous than when the light is used.
  • the invention is not limited to the millimeter-wave band, but may also be applied when a carrier frequency of a near millimeter-wave band, such as a sub-millimeter-wave band (a wavelength of 0.1 to 1 millimeters) having a shorter wavelength or a centimeter-wave band (a wavelength of 1 to 10 centimeters) having a longer wavelength, is used.
  • a carrier frequency of a near millimeter-wave band such as a sub-millimeter-wave band (a wavelength of 0.1 to 1 millimeters) having a shorter wavelength or a centimeter-wave band (a wavelength of 1 to 10 centimeters) having a longer wavelength
  • a sub-millimeter-wave band to a millimeter-wave band, a millimeter-wave band to a centimeter-wave band, or a sub-millimeter-wave band to a millimeter-wave band to a centimeter-wave band may be used.
  • FIGS. 1 to 3B are diagrams illustrating functional configurations of signal interfaces of the signal transmission device and the electronic apparatus according to the embodiment. In other words, fundamentals of functional block diagrams are illustrated, focusing on communication processing in the signal transmission device and the electronic apparatus according to the embodiment.
  • FIG. 1 illustrates an overview of the signal transmission device and the electronic apparatus.
  • FIG. 2 illustrates a specific example of the signal transmission device and the electronic apparatus.
  • FIGS. 3A and 3B illustrate functional block diagrams of the signal transmission device.
  • a signal transmission device 1 includes two electronic apparatuses 8 (first electronic apparatus 8_1 and second electronic apparatus 8_2) and a high frequency signal waveguide 308_31. Communication inside the apparatus or communication between apparatuses may be performed through a high frequency signal waveguide 308.
  • the high frequency signal waveguide 308 it is preferable to use, for example, a dielectric waveguide.
  • the first electronic apparatus 8_1 includes a substrate 102_1 on which two semiconductor chips 103 (semiconductor chip 103_1 and semiconductor chip 103_2) are mounted, and a substrate 102_2 on which two semiconductor chips 103 (conductor chip 103_3 and semiconductor chip 103_4) are mounted.
  • one-way communication is possible between the semiconductor chip 103_1 and the semiconductor chip 103_2 through a high frequency signal waveguide 308_11, and two-way communication is possible by combining one-way communication through a high frequency signal waveguide 308_12.
  • one-way communication is possible between the semiconductor chip 103_1 and the semiconductor chip 103_3 through the high frequency signal waveguide 308_13, and one-way communication is possible between the semiconductor chip 103_2 and the semiconductor chip 103_4 through a high frequency signal waveguide 308_14.
  • the second electronic apparatus 8_2 includes a substrate 202_1 on which two semiconductor chips 203 (semiconductor chip 203_1 and semiconductor chip 203_2) are mounted and a substrate 202_2 on which two semiconductor chips 203 (semiconductor chip 203_3 and semiconductor chip 203_4) are mounted.
  • one-way communication is possible between the semiconductor chip 203_1 and the semiconductor chip 203_2 through a high frequency signal waveguide 308_21, and two-way communication is possible by combining one-way communication through the high frequency signal waveguide 308_22.
  • one-way communication is possible between the semiconductor chip 203_1 and the semiconductor chip 203_3 through a high frequency signal waveguide 308_23, and one-way communication is possible between the semiconductor chip 203_2 and the semiconductor chip 203_4 through a high frequency signal waveguide 308_24.
  • first electronic apparatus 8_1 and the second electronic apparatus 8_2 In inter-apparatus communication between the first electronic apparatus 8_1 and the second electronic apparatus 8_2, two-way communication is possible between the semiconductor chip 103_2 and the semiconductor chip 203_2 through the high frequency signal waveguide 308_31.
  • the first electronic apparatus 8_1 and the second electronic apparatus 8_2 are gathered and accommodated in one housing to configure a single electronic apparatus 8_3, and thus communication inside the apparatus may also be possible in such a manner.
  • FIG. 1(B) illustrates a functional block when communication is performed between first and second communication devices 100 and 200 through the high frequency signal waveguide 308.
  • FIG. 1B focuses on a system in which the full-duplex two-way communication (Full-duplex) is performed between the semiconductor chip 103_2 and the semiconductor chip 203_2 through the high frequency signal waveguide 308_31.
  • the first communication device 100 the semiconductor chip 103_2
  • the second communication device 200 the semiconductor chip 203_2
  • a data transmission and reception unit, a signal converting unit, and a high frequency signal input and output unit are provided in the first communication device 100 (the semiconductor chip 103_2) and the second communication device 200 (the semiconductor chip 203_2).
  • the signal transmission device 1 including the high frequency signal waveguide 308, and a plurality of communication devices that are electromagnetically coupled with the high frequency signal waveguide 308, a plurality of transmission paths (communication channels) are formed in the high frequency signal waveguide 308 between the communication devices, and multiple two-way transmission is performed between the communication devices.
  • one transmission path (communication channel) is provided in one high frequency signal waveguide 308. That is, the separate high frequency signal waveguide 308 may be used for each communication channel.
  • the simplex two-way communication may be performed between the communication devices. For example, as illustrated in FIG.
  • the simplex two-way communication may be applied to communication between the semiconductor chip 103_1 and the semiconductor chip 103_2 through the high frequency signal waveguide 308_11, or the high frequency signal waveguide 308_12, communication between the semiconductor chip 103_1 and the semiconductor chip 103_3 through the high frequency signal waveguide 308_13, and communication between the semiconductor chip 103_2 and the semiconductor chip 103_4 through the high frequency signal waveguide 308_14.
  • FIG. 2 illustrates an overview of the signal transmission device 1 when a video camera is used as the first electronic apparatus 8_1 and a display apparatus made of a liquid crystal, an organic EL display device, or the like is used as the second electronic apparatus 8_2.
  • the first communication device 100 is detached from the video camera and the second communication device 200 is detached from the display apparatus.
  • Image information of a subject captured by the video camera (the electronic apparatus 8_1) is converted into a millimeter-wave band high frequency signal by the first communication device 100, and is transmitted to the second communication device 200 of the display apparatus (the electronic apparatus 8_2) side through the high frequency signal waveguide 308_31.
  • the second communication device 200 demodulates the received high frequency signal of a millimeter-wave band, reproduces the subject image information, and provides the result to the display apparatus. In this manner, the subject image captured by the video camera is displayed on the display apparatus.
  • FIGS. 3A and 3B illustrate functional block diagrams of the signal transmission device 1 in detail.
  • FIG. 3A illustrates a configuration example when the full-duplex two-way communication is applied.
  • FIG. 3B illustrates a configuration example when the simplex two-way communication is applied.
  • a detailed transmission system is illustrated in the first communication device 100
  • a detailed reception system is illustrated in the second communication device 200.
  • the signal transmission device 1 the first communication device 100 as an example of a first wireless apparatus and the second communication device 200 as an example of a second wireless apparatus are coupled through a signal transmission path 9 (for example, the high frequency signal waveguide 308), and signal transmission is performed using a high frequency signal (for example, the millimeter-wave band).
  • a signal transmission path 9 for example, the high frequency signal waveguide 308
  • the semiconductor chip 103 is provided to correspond to transmission and reception using the millimeter-wave band.
  • the semiconductor chip 203 is provided to correspond to transmission and reception using the millimeter-wave band.
  • a signal to be communicated using the millimeter-wave band includes only a signal requesting a high speed or large capacity.
  • a low speed or small capacity signal, or a signal regarded as a DC such as power is not converted into the millimeter-wave signal.
  • These signals (including power) that are not converted into the millimeter-wave signal are connected by the same method described above.
  • an original electrical signal to be transmitted is collectively referred to as a baseband signal.
  • Each signal generating unit to be described below is an example of a millimeter-wave signal generating unit or an electric signal converting unit.
  • a transmission path coupling unit 108 and the semiconductor chip 103 corresponding to transmission and reception using the millimeter-wave band are mounted on a substrate 102.
  • the semiconductor chip 103 is a large scale integrated circuit (LSI) in which, as an example of a pre-stage signal processing unit, an LSI function unit 104, a signal generating unit 107_1 for transmission processing (an example of a transmission processing unit TX configured to perform transmission processing by converting a transmission target signal into a high frequency signal), and a signal generating unit 207_1 for reception processing (an example of a reception processing unit RX configured to perform reception processing by converting a received high frequency signal into a transmission target signal) are integrated.
  • LSI large scale integrated circuit
  • the LSI function unit 104 is configured to perform main application control of the first communication device 100 and includes, for example, a circuit configured to process various types of signals to be transmitted to the other side or a circuit configured to process various types of signals received from the other side. Although not illustrated, each of the LSI function unit 104, the signal generating unit 107_1, and the signal generating unit 207_1 may be configured separately, or any two of the units may be integrated.
  • the semiconductor chip 103 is connected to the transmission path coupling unit 108.
  • the transmission path coupling unit 108 may be built in the semiconductor chip 103.
  • a part in which the transmission path coupling unit 108 and the signal transmission path 9 are coupled (that is, a part in which a wireless signal is transmitted) is a transmission part or a reception part.
  • an antenna corresponds to these parts.
  • a transmission path coupling unit 208 and the semiconductor chip 203 corresponding to transmission and reception using the millimeter-wave band are mounted on a substrate 202.
  • the semiconductor chip 203 is connected to the transmission path coupling unit 208.
  • the transmission path coupling unit 208 may be built in the semiconductor chip 203.
  • the same structure as the transmission path coupling unit 108 may be employed.
  • the semiconductor chip 203 is an LSI in which, as an example of a post-stage signal processing unit, an LSI function unit 204, a signal generating unit 207_2 for reception processing, and a signal generating unit 107_2 for transmission processing are integrated.
  • each of the LSI function unit 204 and the signal generating units 107_2 and 207_2 may be configured separately, or any two of the units may be integrated.
  • the transmission path coupling units 108 and 208 are configured to perform electromagnetical coupling of a high frequency signal (millimeter-wave band electrical signal) to the signal transmission path 9.
  • a high frequency signal millimeter-wave band electrical signal
  • an antenna structure having an antenna coupling unit, an antenna terminal, an antenna, or the like is applied.
  • a transmission line such as a microstripline, a stripline, a coplanar line, or a slot line may be directly used.
  • the signal generating unit 107_1 includes a transmission-side signal generating unit 110 configured to convert a signal from the LSI function unit 104 into a millimeter-wave signal and perform signal transmission control through the signal transmission path 9.
  • the signal generating unit 207_1 includes a reception-side signal generating unit 220 configured to perform signal reception control through the signal transmission path 9.
  • the signal generating unit 107_2 includes the transmission-side signal generating unit 110 configured to convert a signal from the LSI function unit 204 into a millimeter-wave signal and perform signal transmission control through the signal transmission path 9.
  • the signal generating unit 207_2 includes a reception-side signal generating unit 220 configured to perform signal reception control through the signal transmission path 9.
  • Transmission-side signal generating unit 110 and the transmission path coupling unit 108 constitute a transmission system (transmission unit: a transmission-side communication unit).
  • the reception-side signal generating unit 220 and the transmission path coupling unit 208 constitute a reception system (reception unit: a reception-side communication unit).
  • the transmission-side signal generating unit 110 includes a multiplex processing unit 113, a parallel-serial converting unit 114 (PS conversion unit), a modulation function unit (a modulation unit 115 and a frequency conversion unit 116), and an amplifier 117.
  • the amplifier 117 is an example of an amplitude adjustment unit configured to adjust a magnitude of an input signal and output the result.
  • the modulation unit 115 and the frequency conversion unit 116 may be combined into a so-called direct conversion system. When the direct conversion system is used, wide band transmission (wide bandwidth) is possible, and a simple and compact circuit configuration may be obtained (small and simple circuits).
  • the multiplex processing unit 113 When there are a plurality of types of signals (denoted as N1) to be communicated using the millimeter-wave band among signals from the LSI function unit 104, the multiplex processing unit 113 performs a multiplexing process such as time division multiplexing, frequency division multiplexing, or code division multiplexing, and combines the plurality of types of signals into a signal of one system. For example, a plurality of types of signals requesting a high speed or a large capacity are combined into a signal of one system as signals to be transmitted using the millimeter-wave.
  • a multiplexing process such as time division multiplexing, frequency division multiplexing, or code division multiplexing
  • the parallel-serial converting unit 114 converts a parallel signal into a serial data signal and provides the converted signal to the modulation unit 115.
  • the modulation unit 115 modulates a transmission target signal and provides the modulated signal to the frequency conversion unit 116.
  • the parallel-serial converting unit 114 is provided for a parallel interface specification used for a plurality of signals for parallel transmission and is unnecessary for a serial interface specification.
  • the modulation unit 115 may modulate at least one of an amplitude, a frequency, and a phase of a transmission target signal, and may also employ a combining method thereof.
  • An analog modulation scheme includes, for example, amplitude modulation (AM) and vector modulation.
  • the vector modulation includes frequency modulation (FM) and phase modulation (PM).
  • a digital modulation scheme includes, for example, amplitude shift keying (ASK), frequency shift keying (FSK), phase shift keying (PSK), and amplitude phase shift keying (APSK) for modulating an amplitude and a phase.
  • Quadrature amplitude modulation (QAM) is representative amplitude phase modulation.
  • the present embodiment uses a scheme in which a synchronous detection method is employed in a reception side.
  • the frequency conversion unit 116 performs frequency conversion on the transmission target signal modulated by the modulation unit 115, generates a millimeter-wave electrical signal (high frequency signal), and provides the generated signal to the amplifier 117.
  • the millimeter-wave electrical signal refers to an electrical signal having a frequency of approximately 30 GHz to 300 GHz. As indicated by the term "approximately,” if a frequency can obtain an effect of millimeter-wave communication, a lower bound is not limited to 30 GHz and an upper bound is not limited to 300 GHz.
  • the frequency conversion unit 116 may employ various circuit configurations. For example, a configuration having a frequency mixing circuit (a mixer circuit) and a local oscillation circuit may be used.
  • the local oscillation circuit generates a carrier wave (carrier signal, reference carrier wave) used for modulation.
  • the frequency mixing circuit multiplies (modulation) the signal from the parallel-serial converting unit 114 and the millimeter-wave band carrier wave generated by the local oscillation circuit, generates a millimeter-wave band transmission signal, and provides the generated signal to the amplifier 117.
  • the amplifier 117 amplifies the millimeter-wave electrical signal after frequency conversion, and provides the amplified signal to the transmission path coupling unit 108.
  • the amplifier 117 is connected to the two-way transmission path coupling unit 108 through, for example, an antenna terminal (not illustrated).
  • the transmission path coupling unit 108 transmits the millimeter-wave high frequency signal generated by the transmission-side signal generating unit 110 to the signal transmission path 9.
  • the transmission path coupling unit 108 may include, for example, the antenna coupling unit.
  • the antenna coupling unit constitutes one or a part of the transmission path coupling unit 108 (signal coupling unit).
  • the antenna coupling unit refers to a unit that couples an electronic circuit in the semiconductor chip and an antenna inside or outside the chip in a narrow sense, and refers to a unit that couples signals between the semiconductor chip and the signal transmission path 9 in a broad sense.
  • the antenna coupling unit may include, for example, at least an antenna structure.
  • the antenna structure may include a unit of electromagnetical (according to an electromagnetic field) coupling with the signal transmission path 9, may couple the millimeter-wave band electrical signal to the signal transmission path 9, and does not mean only the antenna itself.
  • the reception-side signal generating unit 220 includes an amplifier 224, a demodulation function unit (a frequency conversion unit 225 and a demodulation unit 226), a serial-parallel conversion unit 227 (an SP conversion unit), and a unification processing unit 228.
  • the amplifier 224 is an example of an amplitude adjustment unit configured to adjust a magnitude of an input signal and output the result. Similar to the modulation function unit, the frequency conversion unit 225 and the demodulation unit 226 may be combined into a so-called direct conversion system. In addition, an injection locking method may be applied to generate a demodulation carrier signal.
  • the reception-side signal generating unit 220 is connected to the transmission path coupling unit 208.
  • the reception-side amplifier 224 is connected to the transmission path coupling unit 208, amplifies the millimeter-wave electrical signal received by the antenna, and provides the amplified signal to the frequency conversion unit 225.
  • the frequency conversion unit 225 performs frequency conversion on the amplified millimeter-wave electrical signal, and provides the frequency converted signal to the demodulation unit 226.
  • the demodulation unit 226 demodulates the frequency converted signal, obtains a baseband signal, and supplies the obtained signal to the serial-parallel conversion unit 227.
  • the serial-parallel conversion unit 227 converts serial reception data into parallel output data, and provides the converted data to the unification processing unit 228. Similar to the parallel-serial converting unit 114, when this configuration example is not applied, the serial-parallel conversion unit 227 is provided for a parallel interface specification used for a plurality of signals for parallel transmission. When original signal transmission is performed in series between the first and second communication devices 100 and 200, the parallel-serial converting unit 114 and the serial-parallel conversion unit 227 may not be provided.
  • the unification processing unit 228 corresponds to the multiplex processing unit 113, and separates signals combined in one system into a plurality of types of signal_n (n is 1 to N). For example, a plurality of data signals combined in one system are separated by each type and are provided to the LSI function unit 204.
  • the LSI function unit 204 is configured to perform main application control of the second communication device 200, and includes, for example, a circuit configured to process various types of signals received from the other side.
  • a part from the LSI function unit 104 to the parallel-serial converting unit 114 of the signal generating unit 107, and a part from the LSI function unit 204 to the serial-parallel conversion unit 227 correspond to the data transmission and reception unit.
  • a part from the modulation unit 115 to the amplifier 117 or from the amplifier 224 to the demodulation unit 226 corresponds to the high frequency signal conversion unit.
  • the transmission path coupling unit 108 or the transmission path coupling unit 208 corresponds to the high frequency signal input and output unit.
  • the signal transmission device 1 may further include a parameter setting function.
  • the first communication device 100 includes a first setting value processing unit 7100 and the second communication device 200 includes a second setting value processing unit 7200.
  • a transmission characteristic between transmission and reception is already known. Under an environment in which a transmission condition between transmission and reception is not substantially changed (that is, a fixed condition), for example, when an arrangement position of transmission and reception units is not changed in one housing (in communication inside the apparatus), or when transmission and reception units are arranged in separate housings, but an arrangement position of the transmission and reception units is predetermined while the units are used (in signal transmission between apparatuses in a relatively short distance), it is possible to previously identify the transmission characteristic between the transmission and reception units.
  • Each signal processing unit (in this example, the signal generating unit 107 or 207) performs predetermined signal processing based on a setting value.
  • the setting value processing unit inputs a setting value for predetermined signal processing to the signal processing unit.
  • the setting value is not limited to a setting value corresponding to the transmission characteristic, or signal transmission inside the apparatus or between apparatuses, but also includes, for example, parameter setting for variation correction of circuit elements.
  • the parameter setting for variation correction of circuit elements is included, and preferably, the setting value processing unit may input a setting value for predetermined signal processing to the signal processing unit corresponding to the transmission characteristic between the transmission and reception units.
  • the signal processing unit may operate with no problems.
  • the parameter setting is not dynamically changed and thus it is possible to reduce a parameter calculating circuit and power consumption.
  • various circuit parameters depending on the communication environment may be determined in advance.
  • the signal processing unit may operate with no problems. For example, an optimal parameter is calculated at the time of shipping, the parameter is maintained inside the device, and thus it is possible to reduce the parameter calculating circuit and power consumption.
  • signal processing parameter settings there are various signal processing parameter settings.
  • gain setting signal amplitude setting
  • the signal amplifier is used in, for example, transmission power setting, reception level setting to be input to the demodulation function unit, or automatic gain control (AGC).
  • AGC automatic gain control
  • the signal processing unit includes the amplitude adjustment unit configured to perform signal processing by adjusting a magnitude of an input signal and outputting the adjusted signal, and the setting value processing unit inputs a setting value for adjusting a magnitude of an input signal to the amplitude adjustment unit.
  • phase adjustment amount setting For example, in a system in which a carrier signal and a clock are separately transmitted, a phase is adjusted to match a transmission signal delay amount.
  • the signal processing unit includes a phase adjustment unit configured to perform signal processing by adjusting a phase of an input signal and outputting the adjusted signal, and the setting value processing unit inputs a setting value for adjusting a phase of an input signal to the phase adjustment unit. It is also possible to combine this phase adjustment amount setting and the aforementioned gain setting.
  • Another example of the signal processing parameter setting includes frequency characteristic setting when the transmission side emphasizes an amplitude of a low frequency component or a high frequency component, echo cancellation amount setting when two-way communication is performed, and crosstalk cancellation amount setting when each of the transmission and reception units includes a plurality of antennas and spatial multiplexing communication is performed between transmission and reception.
  • the signal processing parameter setting includes settings of an amplitude value (injection amount) or a phase shift amount of an injection signal when a carrier signal for demodulation (demodulation carrier signal) is generated by being synchronized with a carrier signal for modulation (modulation carrier signal) that is generated by the transmission-side carrier signal generating unit using the injection locking method based on a received signal, or setting of a correction amount of a phase difference between the demodulation carrier signal and a reception signal to be input to the demodulation function unit.
  • the signal transmission path 9 serving as a millimeter-wave propagation path is a free space transmission path, and may be used for propagation, for example, inside the housing or through a space between electronic apparatuses.
  • a waveguide structure including a waveguide, a transmission line, a dielectric line, a dielectric material, or the like is used.
  • the high frequency signal waveguide 308 is used to trap a millimeter-wave electromagnetic wave in the transmission path and transmit the wave efficiently.
  • a dielectric waveguide including a dielectric material having a certain range of a dielectric constant and a certain range of a dielectric tangent may be used.
  • the dielectric waveguide may be a circuit substrate itself, may be disposed on the substrate, or may be embedded in the substrate.
  • the dielectric waveguide may be made at a low cost.
  • the signal transmission path 9 (the high frequency signal waveguide 308) may use a magnetic body material instead of the dielectric material.
  • a shielding member for example, a top surface, a bottom surface, and a side surface: but not a portion corresponding to the transmission or reception part
  • a shielding member for example, a reflecting member, or an absorbing member
  • a shielding material for example, a metal member including metal plating is used.
  • the metal member since the metal member also functions as a reflective material, a reflection component is used and a reflected wave due to the reflection component may also be used for transmission and reception. Therefore, increased sensitivity is expected.
  • the signal transmission path 9 serving as a millimeter-wave transmission channel is used for single-core two-way transmission of one system (single core).
  • a half-duplex system in which time division duplex (TDD) is applied, or a full-duplex system in which frequency division duplex (FDD) or the like is applied is used.
  • the frequency division duplex is employed.
  • the frequency division multiplexing (FDM) is employed as a multiplexing technique for sharing one circuit by bundling a plurality of circuits.
  • FDM frequency division multiplexing
  • 3A illustrates a configuration of the full-duplex two-way communication using the frequency division duplex (FDD) in which a frequency band to be used for communication is divided in half and a separate frequency is used for transmission and reception in order to perform communication.
  • FDD frequency division duplex
  • the configuration corresponds to the simplex two-way communication (simplex) as illustrated in FIG. 3B .
  • a method of signal transmission that converts a frequency of an input signal is generally used for broadcast or wireless communication.
  • a relatively complex transmitter or receiver is used to cope with problems such as a distance at which communication is possible (an S/N problem with respect to thermal noise), handling of reflection or multipath, or prevention of disturbance or interference from another channel.
  • the signal generating units 107 and 207 used in the embodiment use a higher frequency millimeter-wave band than a frequency range used in the complex transmitter or receiver that is generally used for the broadcast or wireless communication. Accordingly, since a wavelength ⁇ is short, a frequency range that can be easily reused and is suitable for communication between multiple adjacently disposed devices is used.
  • the first and second communication devices 100 and 200 include an interface (connection through a terminal and a connector) using the aforementioned electric wire for a low speed or small capacity signal or power supply.
  • the signal generating unit 107 is an example of a signal processing unit configured to perform predetermined signal processing based on a setting value (parameter). In this example, signal processing of an input signal received from the LSI function unit 104 is performed and a millimeter-wave signal is generated.
  • the signal generating units 107 and 207 are connected to the transmission path coupling unit 108 using a transmission line such as a microstripline, a stripline, a coplanar line, or a slot line, and the generated millimeter-wave signal is provided to the signal transmission path 9 through the transmission path coupling unit 108.
  • the transmission path coupling unit 108 includes, for example, an antenna structure that has a function of converting a transmitted millimeter-wave signal into an electromagnetic wave and sending the electromagnetic wave.
  • the transmission path coupling unit 108 is electromagnetically coupled with the signal transmission path 9, and the electromagnetic wave converted by the transmission path coupling unit 108 is provided in one end of the signal transmission path 9.
  • the transmission path coupling unit 208 in the second communication device 200 side is coupled with the other end of the signal transmission path 9.
  • the signal transmission path 9 is provided between the transmission path coupling unit 108 in the first communication device 100 side and the transmission path coupling unit 208 in the second communication device 200 side, and thus the millimeter-wave electromagnetic wave propagates through the signal transmission path 9.
  • the transmission path coupling unit 208 receives the electromagnetic wave transmitted to the other end of the signal transmission path 9, converts the received wave into a millimeter-wave band signal, and provides the converted signal to the signal generating unit 207 (baseband signal generating unit).
  • the signal generating unit 207 is an example of a signal processing unit configured to perform predetermined signal processing based on a setting value (parameter). In this example, signal processing of the converted millimeter-wave signal is performed, an output signal (baseband signal) is generated, and the generated signal is provided to the LSI function unit 204.
  • the above operations have been described in signal transmission from the first communication device 100 to the second communication device 200. Similarly, in signal transmission from the LSI function unit 204 of the second communication device 200 to the first communication device 100, it is possible to transmit the millimeter-wave signal two ways.
  • FIG. 4 shows diagrams illustrating a cause of mutual interference generation.
  • FIG. 4(A) illustrates an ideal gain characteristic of the amplifier (amplifier circuit).
  • FIGS. 4(B) and 4(C) illustrate realistic gain characteristics of the amplifier.
  • the horizontal axis represents a frequency in gigahertz (GHz) and the vertical axis represents a gain in decibels (dB) (it is the same in the following gain characteristic diagram).
  • the amplifier has a resonance characteristic for a signal of a desired channel (a frequency band of a desired wave) and amplifies the signal.
  • a gain characteristic (a frequency characteristic of a gain) of the amplifier tuned in the desired wave (carrier frequency Fc) in other words, ideally, a characteristic diagram illustrating a frequency selection characteristic is shown such that low and high frequency sides are symmetrical with respect to a peak point, as illustrated in FIG. 4(A) . That is, gain attenuation is vertically symmetrical.
  • the low frequency side has a higher gain tendency than the high frequency side, that is, the low frequency side has more insufficient gain attenuation than the high frequency side.
  • FIG. 4(B) the low frequency side has a higher gain tendency than the high frequency side, that is, the low frequency side has more insufficient gain attenuation than the high frequency side.
  • the high frequency side has a higher gain tendency than the low frequency side, that is, an asymmetrical characteristic is shown such that the high frequency side has more insufficient gain attenuation than the low frequency side.
  • an adjacent channel component carrier frequency F D
  • an adjacent channel component carrier frequency F U
  • the adjacent channel component is demodulated, and thus so-called mutual interference occurs.
  • the adjacent channel component is demodulated.
  • the amplifier may have an approximately symmetrical gain frequency characteristic (gain characteristic) such that the gain frequency characteristic represents a sufficient attenuation degree for both of the lower-side and upper-side adjacent channels.
  • gain characteristic gain characteristic
  • the high frequency side has a higher gain tendency than the low frequency side, that is, the high frequency side has more insufficient gain attenuation than the low frequency side.
  • the low frequency side has a higher gain tendency than the high frequency side, that is, the low frequency side has more insufficient gain attenuation than the high frequency side.
  • the high frequency side has a higher gain tendency than the low frequency side.
  • Q value quality factor: resonance performance
  • Q value includes a frequency characteristic when the amplifier has a tuning characteristic (frequency selectivity for the self channel).
  • this is because a decrease degree of Q value is enhanced in the high frequency side. For example, when Q value is low, a peak gain decreases, a bandwidth becomes broader, and thus an overall gain attenuation degree also becomes gentle.
  • the decrease degree of Q value is enhanced in the high frequency side, a gain attenuation degree in the high frequency side becomes gentler than that in the low frequency side (refer to a low-noise amplifier 400_1 to be described below).
  • FIGS. 5 and 6 are diagrams illustrating a principle of a first example of a mutual interference countermeasure method of according to the embodiment.
  • FIG. 5(A) is a diagram illustrating a countermeasure method when an asymmetrical characteristic is shown such that the high frequency side has a higher gain tendency than the low frequency side.
  • FIG 5(B) is a diagram illustrating a countermeasure method when an asymmetrical characteristic is shown such that the low frequency side has a higher gain tendency than the high frequency side.
  • FIG. 6 shows diagrams illustrating a method of determining whether the gain suppressing unit is necessary and determining that the gain suppressing unit is configured to suppress a gain of either channel when the number of channels is two in total.
  • the amplifier has an asymmetrical open-loop gain characteristic.
  • the asymmetrical characteristic is effectively used so as to provide the gain suppressing unit (a gain suppressing circuit and an interfering wave eliminating circuit) only for either of the lower-side or the upper-side adjacent channel in the amplifier. Therefore, it is possible to prevent interference from the adjacent channel.
  • the gain suppressing unit is configured to suppress a gain of a channel positioned at a high gain side out of adjacent channels in the asymmetric gain frequency characteristic.
  • the gain suppressing unit is configured to suppress a gain of a channel positioned at an insufficient gain attenuation side out of adjacent channels in the asymmetric gain attenuation.
  • the gain suppressing unit is provided in both of the lower-side and upper-side adjacent channels, since it is possible to use the asymmetrical open-loop gain characteristic of the amplifier, it is possible to simply configure a device or a circuit.
  • "(effectively) use the asymmetric gain characteristic” means that, in order to compensate for an attenuation shortage due to the asymmetric open-loop gain frequency characteristic, the gain suppressing unit that is related to only either interference channel between low and high frequency sides with respect to a desired wave, is provided in the amplifier.
  • the signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided in an input side or output side of the amplifier may be used.
  • the first example of the countermeasure method employs a configuration in which the signal suppressing unit includes the gain suppressing unit provided in the amplifier, by following "attenuation shortage due to an asymmetric gain characteristic of the amplifier is compensated in the amplifier," and does not employ a method of disposing the signal suppressing unit outside the amplifier.
  • the method of disposing the signal suppressing unit outside the amplifier will be described in a second example of the countermeasure method.
  • a lower-side adjacent channel signal may be attenuated by matching an attenuating frequency (also referred to as a "trap position") with a lower-side adjacent channel signal (carrier frequency F D ).
  • a lower-side adjacent channel component may be lowered below the reception limit level, the lower-side adjacent channel component is not demodulated, and thus it is possible to prevent mutual interference.
  • an upper-side adjacent channel signal may be attenuated by matching a trap position with an upper-side adjacent channel signal (carrier frequency F U ).
  • An upper-side adjacent channel component may be lowered below the reception limit level, the upper-side adjacent channel component is not demodulated, and thus it is possible to prevent mutual interference.
  • the "gain suppressing unit" does not show attenuation for a desired wave component and shows large attenuation for an interfering wave (undesired wave) component.
  • an impedance is zero and attenuation is not shown for the desired wave component, and ideally, an impedance is infinite and large attenuation is shown for the interference wave component.
  • the trap circuit typically, it is preferable to use the trap circuit. In this case, ideally, an impedance is infinite and attenuation is not shown for the desired wave component, and ideally, an impedance is zero and large attenuation is shown for the interference wave component.
  • a serial resonance circuit or parallel resonance circuit composed of an inductor (an inductive element) and a capacitor (a capacitance element), or a circuit of any combination thereof (a serial-parallel resonance circuit) may be used. Selection of the trap circuit depends on a configuration of the amplifier to which the gain suppressing unit is added.
  • the trap circuit matches the trap position with the interference wave component such as the adjacent channel signal with respect to the desired channel signal, and thus a circuit constant is set to attenuate the interference wave component.
  • FIG. 6 illustrates a method of determining whether the gain suppressing unit (for example, the trap circuit) is necessary and determining that the gain suppressing unit is configured to suppress a gain of either channel in a combination between FIG. 5(A) , a combination between FIG. 5(B) , and a combination between FIGS. 5(A) and 5(B) when the number of channels is two in total.
  • the gain suppressing unit for example, the trap circuit
  • FIG. 6(A) illustrates the first case described in the overview.
  • the open-loop gain frequency characteristic of the amplifier is shown such that the low frequency side has a more insufficient gain attenuation degree than the high frequency side with respect to the self channel.
  • the gain suppressing unit configured to suppress a gain of the low frequency channel in the high frequency channel amplifier.
  • the high frequency channel amplifier has a sufficient gain attenuation degree for the upper-side adjacent channel (carrier frequency F U ), and thus it is unnecessary to provide the gain suppressing unit for the upper-side adjacent channel.
  • FIG. 6(B) illustrates the second case described in the overview.
  • the open-loop gain frequency characteristic of the amplifier is shown such that the high frequency side has a more insufficient gain attenuation degree than the low frequency side with respect to the self channel.
  • the gain suppressing unit configured to suppress a gain of the high frequency channel in the low frequency channel amplifier.
  • the number of channels is two in total, it is unnecessary to provide the gain suppressing unit configured to suppress a gain of the upper-side adjacent channel (carrier frequency F U ) in the high frequency channel amplifier.
  • the low frequency channel amplifier has a sufficient gain attenuation degree for the lower-side adjacent channel (carrier frequency F D ), and thus it is unnecessary to provide the gain suppressing unit for the lower-side adjacent channel.
  • FIG. 6(C) illustrates the third case described in the overview.
  • the open-loop gain frequency characteristic of the low frequency channel amplifier is shown such that the high frequency side has a more insufficient gain attenuation degree than the low frequency side with respect to the self channel
  • the open-loop gain frequency characteristic of the high frequency channel amplifier is shown such that the low frequency side has a more insufficient gain attenuation degree than the high frequency side with respect to the self channel.
  • the high frequency channel amplifier has a sufficient gain attenuation degree for the upper-side adjacent channel (carrier frequency F U ), and thus it is unnecessary to provide the gain suppressing unit for the upper-side adjacent channel.
  • the low frequency channel amplifier has a sufficient gain attenuation degree for the lower-side adjacent channel (carrier frequency F D ), and thus it is unnecessary to provide the gain suppressing unit for the lower-side adjacent channel.
  • a fourth example in FIG. 6(D) illustrates the fourth case described in the overview.
  • the open-loop gain frequency characteristic of the low frequency channel amplifier is shown such that the low frequency side has a more insufficient gain attenuation degree than the high frequency side with respect to the self channel
  • the open-loop gain frequency characteristic of the high frequency channel amplifier is shown such that the high frequency side has a more insufficient gain attenuation degree than the low frequency side with respect to the self channel.
  • the low frequency channel amplifier has a sufficient gain attenuation degree for the high frequency channel without the gain suppressing unit.
  • the high frequency channel amplifier has a sufficient gain attenuation degree for the low frequency channel serving as the lower-side adjacent channel without the gain suppressing unit.
  • the gain suppressing unit configured to suppress a gain of the lower-side adjacent channel (carrier frequency F D ) in the low frequency channel amplifier. It is unnecessary to provide the gain suppressing unit configured to suppress a gain of the upper-side adjacent channel (carrier frequency F U ) in the high frequency channel amplifier. In this manner, in the fourth case in which the number of channels is two in total, for both channels, it is unnecessary to provide the gain suppressing unit configured to suppress a gain of the lower-side or upper-side adjacent channel.
  • the asymmetric open-loop gain characteristics of the amplifier are effectively used, and thus the gain suppressing unit (such as the trap circuit) is provided only for either of the lower-side or the upper-side adjacent channel. Therefore, it is possible to suppress (prevent) an interference problem in multichannel transmission in which frequency division multiplexing is applied. Since an interfering wave influence can be suppressed, it is unnecessary to set a frequency interval with the adjacent channel more than necessary, and thus it is possible to effectively use the frequency.
  • the above methods may be applied to multiple channels having three or more channels and may be applied in two-way communication and one-way communication.
  • the number of channels is equal to or greater than three in total and adjacent channels are combined, based on one of the above four cases, it is determined whether the gain suppressing unit is necessary, and when the gain suppressing unit is provided, it is determined that a gain of either channel is suppressed.
  • FIG. 7 illustrates a first example of a low-noise amplifier (referred to as a low-noise amplifier 400 (LNA) which corresponds to the amplifier 224) including a trap circuit as an example of the gain suppressing unit.
  • FIG. 7(A) illustrates a first circuit configuration example of the low-noise amplifier 400_1.
  • FIG. 7(B) illustrates a gain characteristic example of the low-noise amplifier 400_1 illustrated in FIG. 7(A) .
  • the first example of the low-noise amplifier 400_1 includes two N-channel transistors (specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET)) connected in cascade (casecode, concatenation), and three amplifier stages (amplifier) including a load inductor in which a constant is set to have frequency selectivity for the self channel.
  • cascade connection refers to the fact that one end (drain end) of a main electrode end in an input-side transistor is directly connected to one end (source end) of a main electrode end in an output (load) side transistor. That is, a source ground circuit of the input-side transistor and a gate ground circuit of the output-side transistor are vertically connected to constitute a cascade circuit.
  • Each stage employs a configuration of AC coupling through a capacitor in order to easily set a DC bias, and the configuration is not limited to the AC coupling, but includes a configuration of DC coupling by devising a bias circuit.
  • the low-noise amplifier 400 (not limited to the low-noise amplifier 400_1 but including other configuration examples to be described below) is implemented by, for example, a silicon integrated circuit such as a complementary metal-oxide semiconductor (CMOS).
  • CMOS complementary metal-oxide semiconductor
  • an input-side transistor Q11 and a load-side transistor Q12 are cascade-connected to a first-stage amplifier 410.
  • the other end (source end) of a main electrode end of the transistor Q11 is connected to a reference potential point (for example, a ground).
  • the other end (drain end) of a main electrode end of the transistor Q12 is connected to a power supply Vdd through an inductor L11.
  • a control input end (gate end, control gate) of the transistor Q11 is supplied with a predetermined bias voltage BIAS through an inductor L12, and is connected to an input end IN of the low-noise amplifier 400_1 through a coupling capacitor C12.
  • a control input end (gate end, screen gate) of the transistor Q12 is connected (AC ground) to the power supply Vdd.
  • Second-stage and third-stage amplifiers have approximately the same configuration as the first-stage amplifier.
  • an input-side transistor Q21 and a load-side transistor Q22 are cascade-connected to a second-stage amplifier 420.
  • the other end (source end) of a main electrode end of the transistor Q21 is connected to a reference potential point (ground).
  • the other end (drain end) of a main electrode end of the transistor Q22 is connected to the power supply Vdd through an inductor L21.
  • a control input end (gate end) of the transistor Q21 is supplied with a predetermined bias voltage BIAS through a resistance element R22, is connected to the other end (drain end) of the main electrode end of the transistor Q12 of the first-stage amplifier 410 through a coupling capacitor C22, and is supplied with an output signal of the first-stage amplifier 410.
  • the control input end (gate end) of the transistor Q22 is connected to the power supply Vdd.
  • An input-side transistor Q31 and a load-side transistor Q32 are cascade-connected to a third-stage amplifier 430.
  • the other end (source end) of a main electrode end of the transistor Q31 is connected to a reference potential point (ground).
  • the other end (drain end) of a main electrode end of the transistor Q32 is connected to the power supply Vdd through an inductor L31.
  • a connection point between the other end (drain end) of the main electrode end of the transistor Q32 and the inductor L31 is connected to an output end OUT of the low-noise amplifier 400_1.
  • a control input end (gate end) of the transistor Q31 is supplied with a predetermined bias voltage BIAS through a resistance element R32, is connected to the other end (drain end) of the main electrode end of the transistor Q22 of the second-stage amplifier 420 through a coupling capacitor C32, and is supplied with an output signal of the second-stage amplifier 420.
  • a control input end (gate end) of the transistor Q32 is connected to the power supply Vdd.
  • the inductor L12 for a first-stage bias may be replaced with the resistance element R12 as the second stage or third stage.
  • the inductor L12 it is possible to allow a peaking function (shunt peaking) for emphasizing a high frequency in the input side.
  • a source ground circuit composed of a source end, a gate end, and a drain end of the input-side transistor and a source ground circuit composed of a source end, a gate end, and a drain end of the output-side transistor are vertically connected to constitute the cascade circuit.
  • an amplification factor is set to ⁇ 1 and ⁇ 2
  • a mutual conductance is set to g m1 and g m2
  • a drain resistance is set to r d1 and r d2 .
  • a total amplification factor is set to ⁇ 1 ⁇ ⁇ 2
  • an output resistance is amplified by ⁇ 1 times an output-side drain resistance r d2
  • a mutual conductance is set to g m2
  • a feedback capacity is set to 1/ ⁇ 2 .
  • the MOSFET has a capacitor C dg between the drain and the gate.
  • C dg between the drain and the gate.
  • parasitic oscillation easily occurs at a high frequency and an input capacitance increases equivalently due to a mirror effect. For this reason, the MOSFET is undesirable.
  • the cascade circuit when used, it is possible to suppress the above problem.
  • such a cascade circuit may be included in the semiconductor integrated circuit as a dual-gate MOSFET.
  • the output-side transistor When the output-side transistor is interposed between a gate (the gate end of the input-side transistor) and a drain (the drain end of the output-side transistor) of the cascade circuit, it is possible to build an electrostatic shield between the gate and the drain and reduce the feedback capacity to 1/ ⁇ 2 times.
  • a constant of a coil (the inductor L11, L21, or L31), serving as a load of each stage, is set to have frequency selectivity (a resonance characteristic) for a desired wave frequency.
  • An inductor component of the coil and a parasitic capacitance component of a wire, a transistor, or the like constitute a parallel resonance circuit. In this way, each stage amplifier has frequency selectivity and performs an amplification function.
  • each inductor L is performed in one wiring layer (for example, a first layer).
  • pattern formation of each inductor L is performed in a plurality of wiring layers (for example, first and second layers, and first to third layers) and the inductors L of each layer are connected together (connected in parallel through an electric circuit), a series resistance component of the inductor L as a whole may be reduced.
  • Q value of the inductor L becomes higher than a case in which only one wiring layer (a metal layer) is used, and the low-noise amplifier 400 has an increased gain in a desired frequency. That is, gain enhancement is achieved (refer to a low-noise amplifier 400_4 to be described below).
  • Q value increases, although the bandwidth is likely to be narrowed, it is possible to maintain a necessary and sufficient bandwidth.
  • a method in which a series resistance component of the inductor L is reduced to achieve gain enhancement may be preferably applied to the low-noise amplifier 400 of the high frequency side.
  • a frequency characteristic of Q value when the amplifier has a tuning characteristic (frequency selectivity), in many cases, a decrease degree of Q value is large in high frequency side, and the high frequency side shows a greater gain decrease than the low frequency side.
  • the method may not be applied to the low-noise amplifier 400 for the 57 GHz band but may be applied to only the low-noise amplifier 400 for the 80 GHz band.
  • the first example of the low-noise amplifier 400_1 includes a trap circuit 601 at a cascade connection point of the first-stage amplifier 410.
  • the low-noise amplifier 400_1 includes the trap circuit 601 configured as a serial resonance circuit including the inductor L13 and the capacitor C13.
  • the trap circuit 601 is provided between a cascade connection point (referred to as a node ND1) of the transistors Q11 and Q12, and the reference potential point (ground).
  • Each constant of the inductor L13 and the capacitor C13 is set and a pattern design of the inductor L13 and the capacitor C13 is performed such that a resonant frequency of the serial resonance circuit including the inductor L13 and the capacitor C13 matches a carrier frequency of an adjacent channel serving as an interfering wave.
  • pattern formation of the inductor L13 is performed in one wiring layer (for example, a first layer).
  • a series resistance component of the inductor L is reduced, and thus Q value becomes higher than when only one wiring layer (a metal layer) is used.
  • the trap circuit 601 may be formed as a lumped parameter circuit by forming a coil-shaped pattern, but the invention is not limited thereto, and may include, for example, a distributed constant circuit shape in which a pattern such as a microstripline is formed.
  • the capacitor C component preferably uses a distributed capacity when pattern formation of the inductor L is performed.
  • FIG. 7(B) illustrates a gain characteristic example of the low-noise amplifier 400_1 illustrated in FIG. 7(A) .
  • a gain characteristic example obtained by simulation
  • the low-noise amplifier 400_1 corresponding to the 57 GHz band (a desired wave frequency band) is illustrated.
  • a dashed line indicates a case in which the trap circuit 601 is not provided.
  • a solid line indicates a case in which the trap circuit 601 is provided.
  • the asymmetric gain characteristic is shown such that the high frequency side has a higher gain tendency than the low frequency side with respect to a peak point (in the vicinity of 57 GHz).
  • an adjacent channel frequency of the high frequency side is not sufficiently trapped, and frequency selectivity for an adjacent channel component (for example, the 80 GHz band) of the high frequency side decreases.
  • the adjacent channel component (80 GHz band) is demodulated and thus so-called mutual interference occurs.
  • the trap circuit 601 in which a resonant frequency is set to an 80 GHz band is provided, in the example in FIG. 7(B) , it is possible to attenuate (decrease) a gain of about 15 decibels (dB) and it is possible to reduce interference due to a signal leaked into a 57 GHz band reception system from an 80 GHz band transmission system.
  • the first stage is largely influenced in terms of linearity or a noise figure (NF).
  • the gain suppressing unit the trap circuit 601
  • the gain suppressing unit the trap circuit 601 may serve as a noise source and an impedance is not infinite in a desired frequency of the trap circuit 601, a peak gain decreases slightly and thus it is disadvantageous in terms of the NF.
  • FIG. 8 is a diagram illustrating a second circuit configuration example of the low-noise amplifier 400 including a trap circuit as an example of the gain suppressing unit.
  • a low-noise amplifier 400_2 in the second example includes the gain suppressing unit (the trap circuit) in the amplifier 4 other than a first-stage amplifier.
  • the low-noise amplifier 400_2 in the second example illustrated in FIG. 8 includes a trap circuit 602 in a cascade connection point of the second-stage amplifier 420.
  • the low-noise amplifier 400_2 includes the trap circuit 602 configured as a serial resonance circuit including an inductor L23 and a capacitor C23.
  • the trap circuit 602 is provided between a cascade connection point (referred to as a node ND2) of the transistors Q21 and Q22 and a reference potential point (ground).
  • the remaining configuration is the same as in the first example except that the trap circuit 601 is not provided.
  • the gain suppressing unit the trap circuit 601 is provided in the amplifier 4 other than the first-stage amplifier, it is disadvantageous in terms of the linearity compared to the first example. This is because a stage having a high signal amplitude performs an interfering wave eliminating function (the trap function).
  • FIG. 9 is a diagram illustrating a third circuit configuration example of the low-noise amplifier 400 including a trap circuit as an example of the gain suppressing unit.
  • a low-noise amplifier 400_3 in the third example combines the low-noise amplifier 400_1 in the first example and the low-noise amplifier 400_2 in the second example, and includes an ability to enable or disable an operation of the gain suppressing unit (the trap circuit).
  • the low-noise amplifier 400_3 in the third example uses a switch for allowing the gain suppressing unit to be selectively used, and thus it is possible to selectively use the low-noise amplifier 400_1 in the first example and the low-noise amplifier 400_2 in the second example.
  • the low-noise amplifier 400_3 includes a transistor Q13 serving as a selector switch in a side opposite to the node ND1 of the trap circuit 601 and a transistor Q23 serving as a selector switch in a side opposite to the node ND2 of the trap circuit 602.
  • the transistors Q13 and Q23 are N-channel transistors (specifically MOSFETs).
  • MOSFETs N-channel transistors
  • one end (drain end) of a main electrode end is connected to the capacitor C13, and the other end (source end) of the main electrode end is connected to a reference potential point (ground).
  • a control input end (gate end) is supplied with a control signal CNT1 for performing on/off control of the switch.
  • one end (drain end) of a main electrode end is connected to the capacitor C23 and the other end (source end) of the main electrode end is connected to a reference potential point (ground).
  • a control input end (gate end) is supplied with a control signal CNT2 for performing on/off control of the switch.
  • the transistor Q13 serving as the switch When the control signal CNT1 is at a high level, the transistor Q13 serving as the switch is turned on, and thus the trap circuit 601 functions effectively. On the other hand, when the control signal CNT1 is at a low level, the transistor Q13 serving as the switch is turned off, and thus it is the same as a case in which the trap circuit 601 is not provided.
  • the control signal CNT2 When the control signal CNT2 is at a high level, the transistor Q23 serving as the switch is turned on, and thus the trap circuit 602 functions effectively. On the other hand, when the control signal CNT2 is at a low level, the transistor Q23 serving as the switch is turned off, and thus it is the same as a case in which the trap circuit 602 is not provided.
  • the low-noise amplifier 400_3 in the third example depending on usage purposes or a required specification (focusing on the linearity or the noise performance), it is possible to selectively use the low-noise amplifier 400_1 in the first example and the low-noise amplifier 400_2 in the second example.
  • both of the transistors Q13 and Q23 are turned on and thus both of the trap circuits 601 and 602 effectively function, it is possible to allow a larger attenuation amount than when only one transistor functions. Therefore, it is possible to respond to a trap amount shortage when only one transistor functions.
  • the aforementioned third example is not a simple combination of the first and second examples and it allows the trap circuit to be selectively provided.
  • selective providing is not necessary.
  • the trap circuit 602 when the trap circuit 602 is selectively used based on the first example in which the trap circuit 601 is regularly used, it is possible to respond to adjacent channel interference focusing on the linearity in a general state, and it is possible to respond to a trap amount shortage state by allowing the trap circuit 602 to function.
  • the trap circuit 601 when the trap circuit 601 is selectively used based on the second example in which the trap circuit 602 is regularly used, it is possible to respond to adjacent channel interference focusing on the noise performance in a general state, and it is possible to respond to a trap amount shortage state by allowing the trap circuit 601 to function.
  • FIG. 10 is a diagram illustrating the general low-noise amplifier 400_4 having no trap circuit as an example of the gain suppressing unit.
  • FIG. 10(A) illustrates a circuit configuration example of the low-noise amplifier 400_4.
  • FIG. 10(B) illustrates a gain characteristic example of the low-noise amplifier 400_4 illustrated in FIG. 10(A) .
  • the low-noise amplifier 400_4 includes a three-stage amplifier 4 in which two transistors are cascade-connected.
  • the trap circuit 601 is not provided, the first-stage amplifier 410 is replaced with an amplifier 460 (a reference numeral of a configuration component is changed to 60s from 10s), the second-stage amplifier 420 is replaced with an amplifier 470 (a reference numeral of a configuration component is changed to 70s from 20s), and the third-stage amplifier 430 is replaced with an amplifier 480 (a reference numeral of a configuration component is changed to 80s from 30s).
  • the trap circuit 601 is not provided, the first-stage amplifier 410 is replaced with an amplifier 460 (a reference numeral of a configuration component is changed to 60s from 10s), the second-stage amplifier 420 is replaced with an amplifier 470 (a reference numeral of a configuration component is changed to 70s from 20s), and the third-stage amplifier 430 is replaced with an amplifier 480 (a reference numeral of a configuration component is changed to 80s from 30s).
  • FIG. 10(B) illustrates a gain characteristic example of the low-noise amplifier 400_4 illustrated in FIG. 10(A) .
  • a gain characteristic example obtained by simulation
  • a dashed line indicates a case in which each inductor L is formed in one wiring layer (for example, a first layer).
  • a solid line indicates a case in which each inductor L is formed in a plurality of layers (in this example, first and second layers) and a series resistance component is reduced.
  • the gain suppressing unit (the trap circuit 601 or 602) related to only either interference channel between low and high frequency sides with respect to a desired wave.
  • the gain suppressing unit (specifically, the trap circuit) is used only for an interference channel of the high frequency side with respect to the desired wave.
  • this is only a representative example, and it can be modified as follows.
  • the gain suppressing unit (specifically, the trap circuit) is used only for an interference channel of the low frequency side with respect to the desired wave.
  • the same method may also be applied to a case in which the above states are mixed.
  • Embodiment 1 is an application example of a mutual interference countermeasure in a configuration corresponding to the full-duplex two-way communication.
  • FIG. 11 is a diagram illustrating transmission and reception systems according to Embodiment 1, and is a functional block diagram of Embodiment 1, focusing on a signal transmission function from a modulation function unit to a demodulation function unit through the high frequency signal waveguide 308 (the signal transmission path 9).
  • FIG. 11 illustrates a configuration corresponding to full-duplex two-way communication of a low frequency side (for example, a 57 GHz band and 12.5 gigabits per second (Gb/s)) and a high frequency side (for example, an 80 GHz band and 12.5 Gb/s).
  • a low frequency side for example, a 57 GHz band and 12.5 gigabits per second (Gb/s)
  • Gb/s gigabits per second
  • the first communication device 100 uses a carrier frequency of the high frequency side (80 GHz band) in a transmission processing unit (TX) and a carrier frequency of the low frequency side (57 GHz band) in a reception processing unit (RX). That is, the first communication device 100 includes the 80 GHz transmission processing unit and the 57 GHz reception processing unit.
  • the second communication device 200 uses a carrier frequency of the low frequency side (57 GHz band) in a transmission processing unit (TX) and a carrier frequency of the high frequency side (80 GHz band) in a reception processing unit (RX). That is, the second communication device 200 includes the 57 GHz transmission processing unit and the 80 GHz reception processing unit.
  • the first and second communication devices 100 and 200 have an approximately similar configuration for both channels of the low frequency side (57 GHz band) and the high frequency side (80 GHz band). Furthermore, it is preferable to configure transmission and reception processing units (a circuit composed of a combination of the amplifier 4 and the low-noise amplifier 400, and a peripheral circuit thereof) as a single chip.
  • a transmission target signal (input baseband signal BB_IN: for example, an image signal of 12 bits) is converted into a serial data series at a high speed using the parallel-serial converting unit (not illustrated), and the converted signal is provided to a modulation function unit 8300 as a differential signal.
  • the modulation function unit 8300 uses the signal from the parallel-serial converting unit as a modulation signal and modulates the signal to a millimeter-wave signal according to a predetermined modulation scheme.
  • various circuit configurations may be employed depending on modulation schemes.
  • a direct conversion system that includes a 2-input frequency mixing unit 8302 (a mixer circuit, a multiplier) and a transmission-side local oscillator 8304 for each differential signal system.
  • the transmission-side local oscillator 8304 (a first carrier signal generating unit) generates a carrier signal a (modulation carrier signal) used for modulation.
  • the frequency mixing unit 8302 (a first frequency converting unit) generates a millimeter-wave band transmission signal (a modulated signal) by multiplying (modulation) the signal from the parallel-serial converting unit and a millimeter-wave band carrier wave generated by the transmission-side local oscillator 8304, and provides the result to an amplifier 8117 (AMP: corresponding to the amplifier 117).
  • the transmission signal is amplified by the amplifier 8117 and is radiated from an antenna 8136.
  • the reception system employs a configuration corresponding to the modulation scheme of the transmission system.
  • a square detection circuit for obtaining a detection output proportional to the square of a received high frequency signal (envelope thereof) amplitude, or a simple envelope detection circuit without a square property.
  • a circuit a (synchronous detection circuit) for synchronous detecting a received high frequency signal by generating a demodulation carrier signal and using the carrier signal.
  • the synchronous detection circuit may also be used for a phase or frequency modulation scheme.
  • the direct conversion system using the synchronous detection circuit is employed and the demodulation carrier signal is generated using an injection locking scheme.
  • the millimeter-wave reception signal received through an antenna 8236 is input to a variable gain type low noise amplifier 8224 (LNA, corresponding to the amplifier 224), amplitude adjustment is performed on the signal, and then the result is provided to a demodulation function unit 8400.
  • the demodulation function unit 8400 includes a 2-input frequency mixing unit 8402 (a mixer circuit), a reception-side local oscillator 8404 and a baseband amplifier 8412.
  • the injection signal is provided to the reception-side local oscillator 8404 through an injection path, and thus an output signal corresponding to the carrier signal used for modulation in the transmission-side is obtained.
  • the reception-side local oscillator 8404 obtains an oscillating output signal synchronized with the carrier signal used in the transmission-side.
  • the frequency mixing unit 8402 multiplies (synchronously detects) the received signal and the carrier signal for demodulation (a demodulation carrier signal: referred to as a reproduced carrier signal) based on the output signal of the reception-side local oscillator 8404, and thus a synchronous detection signal is obtained.
  • the frequency mixing unit 8402 may obtain, for example, an excellent bit error rate characteristic and applicability of phase or frequency modulation using quadrature detection.
  • a high frequency component of the synchronous detection signal is eliminated using a filter processing unit (not illustrated), and an input signal waveform (output input baseband signal BB_OUT: for example, an image signal of 12 bits) transmitted from the transmission-side is obtained.
  • the filter processing unit may be provided between the reception-side local oscillator 8404 and the baseband amplifier 8412, or in a post-stage of the baseband amplifier 8412.
  • a phase amplitude adjustment unit 8406 which includes a function of the phase adjustment circuit and a function of adjusting an injection amplitude, is provided in the demodulation function unit 8400.
  • the reception-side local oscillator 8404 and the phase amplitude adjustment unit 8406 constitute a demodulation-side (second) carrier signal generating unit that generates the demodulation carrier signal synchronized with the modulation carrier signal and provides the generated signal to the frequency mixing unit 8402.
  • the phase amplitude adjustment unit 8406 may be provided for either or both of the injection signal to the reception-side local oscillator 8404 and the output signal of the reception-side local oscillator 8404. In the drawing, the phase amplitude adjustment unit 8406 is provided between the amplifier 8224 and the reception-side local oscillator 8404.
  • control (adjustment) of a phase (an injection phase) or an amplitude (an injection voltage) of the injection signal and control of a free-running oscillation frequency F o of the reception-side local oscillator 8404 are important in terms of lock range control (adjustment).
  • an injection locking control unit is provided in a post-stage of the frequency mixing unit 8402, and an injection locking state is determined based on the synchronous detection signal (a baseband signal) obtained by the frequency mixing unit 8402. Based on a determination result, each component to be adjusted is controlled to achieve injection locking.
  • the following problems occur in a method of using the square detection circuit. It is necessary to provide a band-pass filter for selecting a reception-side frequency in a pre-stage of the square detection circuit. However, it is difficult to implement a small-sized sharp band-pass filter. In addition, when the sharp band-pass filter is used, requirements for stability of a transmission-side carrier frequency become strict. Alternatively, when the injection locking is applied, by combining the synchronous detection, although the band-pass filter for selecting a wavelength is not used in the reception-side, it is less susceptible to the interference problem even when a plurality of transmission and reception pairs are independently transmitted at the same time such as multiple channel or full-duplex two-way.
  • a differential baseband signal BB_IN input to the first communication device 100 is up-converted to an 80 GHz band signal by the modulation function unit 8300, is amplified by the amplifier 8117, and is coupled with the high frequency signal waveguide 308 through the antenna 8136.
  • the 80 GHz band signal is received through the antenna 8236 of the second communication device 200 side through the high frequency signal waveguide 308.
  • the reception signal is amplified by the amplifier 8224 (the low-noise amplifier 400), is supplied to the frequency mixing unit 8402, and is also supplied to the reception-side local oscillator 8404 through the phase amplitude adjustment unit 8406 of the injection path.
  • An 80 GHz carrier signal for demodulation synchronized with an 80 GHz carrier signal for modulation in the reception-side local oscillator 8404 is generated in the reception-side local oscillator 8404.
  • the demodulation carrier signal is supplied to the frequency mixing unit 8402, and thus the received 80 GHz band signal is down-converted to the baseband signal BB_IN.
  • the differential baseband signal BB_IN input to the first communication device 100 is up-converted to a 57 GHz band signal by the modulation function unit 8300, is amplified by the amplifier 8117, and is coupled with the high frequency signal waveguide 308 through the antenna 8136.
  • the 57 GHz band signal is received through the antenna 8236 of the first communication device 100 side through the high frequency signal waveguide 308.
  • This reception signal is amplified by the amplifier 8224 (the low-noise amplifier 400), is supplied to the frequency mixing unit 8402, and is also supplied to the reception-side local oscillator 8404 through the phase amplitude adjustment unit 8406 of the injection path.
  • a 57 GHz carrier signal for demodulation synchronized with a 57 GHz carrier signal for modulation in the reception-side local oscillator 8404 is generated in the reception-side local oscillator 8404.
  • the demodulation carrier signal is supplied to the frequency mixing unit 8402, and thus the received 57 GHz band signal is down-converted to the baseband signal BB_IN.
  • high frequency signals of two channels including the low frequency channel (57 GHz band) and the high frequency channel (80 GHz band) are transmitted to the other side from the transmission-side antenna 8136 to the reception-side antenna 8236 through the high frequency signal waveguide 308 (a transmission loss is, for example, 15 to 20 decibels, and it is flat as a whole).
  • a leakage path (represented by a dashed line a in the drawing) is formed to receive a high frequency channel (80 GHz band) signal from the antenna 8136 to the antenna 8236, which are adjacent to each other.
  • a leakage path (represented by a dashed line b in the drawing) is formed to receive a low frequency channel (57 GHz band) signal from the antenna 8136 to the antenna 8236, which are adjacent to each other.
  • a low frequency channel 57 GHz band
  • signal energy of the leakage path is quite high since the antennas 8136 and 8236 are adjacent to each other and a loss caused by the high frequency signal waveguide 308 is small.
  • the adjacent channel component is demodulated and thus "interference problem between adjacent channels" occurs when a reception-side (for example, the amplifier 8224) wavelength selection characteristic is insufficient.
  • a method in which "the asymmetric gain characteristic is (effectively) used" and the gain suppressing unit is provided for only either interference channel between the low and high frequency sides with respect to the desired wave is applied.
  • FIG. 12 is a diagram illustrating a specific technique for addressing mutual interference according to Embodiment 1 (a configuration corresponding to the full-duplex two-way communication illustrated in FIG. 11 ).
  • FIG. 12(A) is a simplified functional block diagram focusing on a signal transmission function from a transmission amplifier to a reception amplifier (the low-noise amplifier 400) through the high frequency signal waveguide 308.
  • FIG. 12(B) illustrates a gain characteristic example of the low-noise amplifier 400 for the low frequency side (having the same characteristic as in FIG. 7(B) ).
  • FIG. 12(C) illustrates a gain characteristic example of the low-noise amplifier 400 for the high frequency side (having the same characteristic as in FIG. 10(B) ).
  • “High” indicates the high frequency channel (80 GHz band) and “Low” indicates the low frequency channel (57 GHz band).
  • “Low” indicates the high frequency channel.
  • “High” indicates the high frequency channel.
  • “High” indicates the low frequency channel.
  • TX indicates the transmission processing unit and "RX” indicates the reception processing unit.
  • TXANT indicates the transmission-side antenna 8136 (a transmission antenna) and “RXANT” indicates the reception-side antenna 8236 (a reception antenna).
  • AMP indicates the transmission amplifier (the amplifier 117 or 8117) and "LNA” indicates the low-noise amplifier 400 (the amplifier 224 or 8224).
  • TP indicates the gain suppressing unit (the trap circuit) configured to suppress an interfering wave (the adjacent channel component) for a desired channel component.
  • a suffix thereof (“_H” or “_L”) indicates whether an attenuation frequency (a trap position) matches either adjacent channel between the high and low frequency sides.
  • trap circuit TP_H is provided in the low-noise amplifier 400 for the low frequency channel, and the attenuation frequency matches the 80 GHz band serving as the upper-side adjacent channel (refer to the gain characteristic illustrated in FIG. 12(B) ).
  • the gain suppressing unit (the trap circuit) configured to suppress a gain of the lower-side adjacent channel is not provided in the low-noise amplifier 400 for the high frequency channel (refer to the gain characteristic illustrated in FIG. 12(C) ).
  • a high frequency signal of the 80 GHz band (High) emitted from the amplifier (AMP) of the first communication device 100 is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT, and is transmitted to the second communication device 200 through the high frequency signal waveguide 308.
  • the high frequency signal of the 80 GHz band (High) is received through the reception antenna RXANT and is supplied to the low-noise amplifier 400 for the 80 GHz band.
  • the high frequency signal of the 80 GHz band (High) emitted from the transmission antenna TXANT jumps to a self reception antenna RXANT through a leakage path (represented by a dashed line a in the drawing), and is supplied to the low-noise amplifier 400 for the low frequency channel.
  • the low-noise amplifier 400 for the low frequency channel includes the trap circuit TP_H in which the attenuation frequency is set to the 80 GHz band, the high frequency signal of the 80 GHz band is sufficiently attenuated by a function of the trap circuit TP_H, as illustrated in FIG. 12(B) .
  • the 80 GHz band is not demodulated in the post-stage demodulation function unit 8400 (not illustrated). As a result, it is possible to prevent interference due to the high frequency signal leaked from the 80 GHz band transmission processing unit TX to the 57 GHz band reception processing unit RX.
  • a high frequency signal of the 57 GHz band (Low) emitted from the amplifier (AMP) of the second communication device 200 is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT, and is transmitted to the first communication device 100 through the high frequency signal waveguide 308.
  • the high frequency signal of the 57 GHz band is received through the reception antenna RXANT and is supplied to the low-noise amplifier 400 for the low frequency channel.
  • the high frequency signal of the 57 GHz band emitted from the transmission antenna TXANT jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line b in the drawing), and is supplied to the low-noise amplifier 400 for the high frequency channel.
  • the low-noise amplifier 400 for the high frequency channel does not include the gain suppressing unit, as illustrated in FIG. 12(C) , a gain in the vicinity of 57 GHz is sufficiently attenuated.
  • the second communication device 100 even when the gain suppressing unit is not used, the 57 GHz band is not demodulated in the post-stage demodulation function unit 8400 (not illustrated). As a result, it is possible to prevent interference due to the high frequency signal leaked from the 57 GHz band transmission processing unit TX to the 80 GHz band reception processing unit RX.
  • FIG. 13 is a diagram illustrating transmission and reception systems according to Embodiment 2 and is a functional block diagram according to Embodiment 2, focusing on a signal transmission function from a modulation function unit to a demodulation function unit through the high frequency signal waveguide 308 (the signal transmission path 9).
  • FIG. 13 illustrates a configuration corresponding to the simplex two-way communication of a low frequency side (for example, a 57 GHz band and 12.5 Gb/s) and a high frequency side (for example, an 80 GHz band and 12.5 Gb/s).
  • the transmission processing unit a circuit composed of two amplifiers 4, and a peripheral circuit thereof
  • the reception processing unit a circuit composed of two low-noise amplifiers 400, and a peripheral circuit thereof
  • Embodiment 2 is an application example of a mutual interference countermeasure in a configuration corresponding to the simplex two-way communication.
  • a signal transmission device 1B_1 according to Embodiment 2 differs from the signal transmission device 1(A) according to Embodiment 1 illustrated in FIG. 11 in that the transmission processing units TX for the low frequency side (57 GHz band) and the high frequency side (80 GHz band) are provided in either of the first or the second communication device 100 or 200 (in this example, in the first communication device 100), and the reception processing units TX for the low frequency side (57 GHz band) and the high frequency side (80 GHz band) are provided in the other side (in this example, in the second communication device 200).
  • the transmission processing units TX for the low frequency side (57 GHz band) and the high frequency side (80 GHz band) are provided in either of the first or the second communication device 100 or 200 (in this example, in the first communication device 100)
  • signals of two channels including the low frequency side (57 GHz band) and the high frequency side (80 GHz band) are transmitted to the other side, from the transmission-side antenna 8136 to the reception-side antenna 8236 through the high frequency signal waveguide 308, respectively.
  • a leakage path represented by a dashed line a
  • a leakage path represented by a dashed line b
  • a leakage path represented by a dashed line b
  • transmission power may be set as the same value and thus signal energy of the leakage path may be the same as that of the normal path.
  • a flat transmission characteristic a frequency characteristic
  • a transmission characteristic is biased toward the low or high frequency side.
  • the adjacent channel component is demodulated and thus an "interference problem between adjacent channels" may occur when the reception-side (for example, the amplifier 8224) wavelength selection characteristic is insufficient.
  • the channel spacing becomes narrower, as can be inferred from the gain characteristic example of the low-noise amplifier 400, the adjacent channel component is demodulated, and thus an "interference problem between adjacent channels" is highly likely to occur.
  • the asymmetric gain characteristic is (effectively) used
  • the gain suppressing unit is provided for only either interference channel between the low and high frequency sides with respect to the desired wave.
  • FIG. 14 is a diagram illustrating a specific technique for addressing mutual interference according to Embodiment 2 (a configuration corresponding to the simplex two-way communication illustrated in FIG. 13 ).
  • FIG. 14 is a simplified functional block diagram focusing on a signal transmission function from a transmission amplifier to a reception amplifier (the low-noise amplifier 400) through the high frequency signal waveguide 308.
  • a gain characteristic of the low-noise amplifier 400 for the low frequency channel (57 GHz band) is the same as that in FIG. 14(B) .
  • a gain characteristic of the low-noise amplifier 400 for the high frequency channel (80 GHz band) is the same as that in FIG. 12(C) .
  • a peak gain of the low-noise amplifier 400 for the high frequency channel is lower than a peak gain of the low-noise amplifier 400 for the low frequency channel. Therefore, when the transmission loss of the high frequency signal waveguide 308 is the same regardless of the frequency band, the transmission power becomes higher for the high frequency side than the low frequency side.
  • the low-noise amplifier 400 for the low frequency channel includes a trap circuit TP_H in which the attenuation frequency is set to the 80 GHz band in the second communication device 200 side.
  • the high frequency signal of the 80 GHz band (High) having higher power than the 57 GHz band (Low) jumps to the reception antenna RXANT through a leakage path (represented by a dashed line a in the drawing), and is supplied to the low-noise amplifier 400 for the low frequency channel. Since the trap circuit TP_H in which the attenuation frequency is set to the 80 GHz band is provided in the low-noise amplifier 400 for the low frequency channel, as illustrated in FIG. 12(B) , the high frequency signal of the 80 GHz band is sufficiently attenuated by a function of the trap circuit TP_H.
  • the 80 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 57 GHz band (not illustrated). As a result, it is possible to prevent interference due to the high frequency signal leaked from the 80 GHz band transmission processing unit TX to the 57 GHz band reception processing unit RX.
  • a high frequency signal of the 57 GHz band (Low) having lower power than the 80 GHz band also jumps through a leakage path (represented by a dashed line b in the drawing) and is supplied to the low-noise amplifier 400 of the high frequency channel.
  • the low-noise amplifier 400 for the high frequency channel does not include the gain suppressing unit, since the 57 GHz band high frequency signal has lower power than the 80 GHz band serving as the desired wave, as illustrated in FIG. 12(C) , a gain in the vicinity of 57 GHz is sufficiently attenuated.
  • the 57 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 80 GHz band (not illustrated). As a result, it is possible to prevent interference due to the high frequency signal leaked from the 57 GHz band transmission processing unit TX to 80 GHz band reception processing unit RX.
  • FIG. 15 is a diagram illustrating a modification of Embodiment 2 and is a diagram illustrating a specific technique for addressing mutual interference in a configuration corresponding to simplex multiple communication.
  • FIG. 15 is a simplified functional block diagram, focusing on a signal transmission function from a transmission amplifier to a reception amplifier (the low-noise amplifier 400) through the high frequency signal waveguide 308.
  • the aforementioned Embodiment 2 describes the method in which, in one-way communication of two channels, "the asymmetric gain characteristic is (effectively) used," and the gain suppressing unit is provided for only either interference channel between the low and high frequency sides with respect to the desired wave.
  • this modification is generally expanded in three or more channels.
  • Embodiment 2 is applied when the simplex multiple communication is applied in a combination of two channels which are adjacent to each other.
  • the low-noise amplifier 400 for an Fx (X is 1 to n-1, F X ⁇ F X+1 ) GHz band includes a trap circuit TP_X+1 in which the attenuation frequency is set to the F X+1 GHz band in the second communication device 200 side.
  • a high frequency signal of the F X+1 GHz band jumps to the reception antenna RXANT for the F X GHz band through a leakage path (represented by a dashed line ⁇ in the drawing) and is supplied to the low-noise amplifier 400.
  • the low-noise amplifier 400 for the F X GHz band includes the trap circuit TP_X+1 in which the attenuation frequency is set to the F X+1 GHz band
  • the high frequency signal of the F X+1 GHz band is sufficiently attenuated by a function of the trap circuit TP_X+1.
  • the F X+1 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the F X GHz band (not illustrated).
  • Embodiment 3 is an application example of a mutual interference countermeasure in a configuration when the full-duplex two-way communication and the simplex two-way communication are combined.
  • a mutual interference countermeasure that is, the method according to Embodiment 2
  • Embodiment 1 is applied when the full-duplex two-way communication is applied in a combination of two channels which are adjacent to each other. A leakage path of a simplex two-way communication system is not considered.
  • Low indicates a low frequency channel (57 GHz band).
  • Mid indicates a high frequency channel (103 GHz band).
  • the mid frequency channel is referred to as an upper-side adjacent channel.
  • the low frequency channel is referred to as a lower-side adjacent channel and the high frequency channel is referred to as an upper-side adjacent channel.
  • the mid frequency channel is referred to as a lower-side adjacent channel.
  • FIGS. 16 to 17 are diagrams illustrating a specific technique for addressing mutual interference according to Embodiment 3 in which the full-duplex two-way communication and the simplex two-way communication are combined.
  • FIG. 16 is a diagram illustrating a gain characteristic example of the low-noise amplifier 400 used in Embodiment 3.
  • FIG. 16(A) illustrates a gain characteristic example of the low-noise amplifier 400 for the low frequency channel (57 GHz band) (it is the same as in FIG. 7(B) ).
  • FIG. 16(B) illustrates a gain characteristic example of the low-noise amplifier 400 for the mid frequency channel (80 GHz band).
  • FIG. 16(C) illustrates a gain characteristic example of the low-noise amplifier 400 for the high frequency channel (103 GHz band).
  • FIG. 17 is a diagram illustrating transmission and reception systems according to Embodiment 3, is a simplified functional block diagram, focusing on a signal transmission function from a transmission amplifier to a reception amplifier (the low-noise amplifier 400) through the high frequency signal waveguide 308, and illustrates three configurations obtained by frequency band combinations of transmission and reception processing units. It is preferable to configure transmission and reception processing units (a circuit composed of a combination of the amplifier 4 and the low-noise amplifier 400, and a peripheral circuit thereof) as a single chip.
  • Embodiment 1 is applied when any two channels adjacent to each other are combined. Specifically, in first or second communication device 100 or 200, focusing on a reception processing unit RX for a certain frequency band, the gain suppressing unit (trap circuit) is provided in the low-noise amplifier 400 for a combination in which an upper-side adjacent channel is the transmission processing unit TX, but the gain suppressing unit (trap circuit) is not provided for the other combinations.
  • the gain suppressing unit trap circuit
  • the first communication device 100 includes a transmission processing unit TX for the high frequency channel (103 GHz band), a reception processing unit RX for the mid frequency channel (80 GHz band), and a transmission processing unit TX for the low frequency channel (57 GHz band).
  • the second communication device 200 includes a reception processing unit RX for the high frequency channel, a transmission processing unit TX for the mid frequency channel, and a reception processing unit RX for the low frequency channel.
  • the gain suppressing unit configured to suppress a gain of the high frequency channel is provided in the low-noise amplifier 400 for the mid frequency channel.
  • the gain suppressing unit (trap circuit) configured to suppress a gain of the mid frequency channel is provided in the low-noise amplifier 400 for the low frequency channel
  • the gain suppressing unit (trap circuit) configured to suppress a gain of the mid frequency channel is provided in the low-noise amplifier 400 for the low frequency channel.
  • the gain suppressing unit (trap circuit) is not provided in combinations other than the above combination.
  • "trap circuit TP_H” is provided in the low-noise amplifier 400 for the mid frequency channel, and the attenuation frequency matches the 103 GHz band high frequency channel (refer to the solid line gain characteristic illustrated in FIG. 16(B) ).
  • the gain suppressing unit (trap circuit) is not provided in the low-noise amplifier 400 for the low frequency channel (refer to the dashed line gain characteristic illustrated in FIG. 16(A) ), and the gain suppressing unit (trap circuit) is not provided in the low-noise amplifier 400 for the high frequency channel (refer to the gain characteristic illustrated in FIG. 16(C) ).
  • "trap circuit TP_M” is provided in the low-noise amplifier 400 for the low frequency channel and the attenuation frequency matches the 80 GHz band mid frequency channel (refer to the solid line gain characteristic illustrated in FIG. 16(A) ).
  • the gain suppressing unit (trap circuit) is not provided in the low-noise amplifier 400 for the mid frequency channel (refer to the dashed line gain characteristic illustrated in FIG. 16(B) ), and the gain suppressing unit (trap circuit) is not provided in the low-noise amplifier 400 for the high frequency channel (refer to the gain characteristic illustrated in FIG. 16(C) ).
  • a high frequency signal of the 103 GHz band (High) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the second communication device 200 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line a in the drawing) and is supplied to the low-noise amplifier 400 for the mid frequency channel.
  • the low-noise amplifier 400 for the low frequency channel includes the trap circuit TP_H in which the attenuation frequency is set to the 103 GHz band, as illustrated in FIG. 16(B) , the high frequency signal of the 103 GHz band is sufficiently attenuated by a function of the trap circuit TP_H.
  • the 103 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 80 GHz band (not illustrated).
  • the 80 GHz band (not illustrated).
  • a high frequency signal of the 57 GHz band (Low) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the second communication device 200 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line b in the drawing) and is supplied to the low-noise amplifier 400 for the mid frequency channel.
  • the low-noise amplifier 400 for the mid frequency channel does not include the gain suppressing unit configured to suppress a gain of the 57 GHz band, as illustrated in FIG. 16(B) , a gain in the vicinity of 57 GHz is sufficiently attenuated.
  • the second communication device 100 even when the gain suppressing unit is not used, the 57 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 80 GHz band (not illustrated). As a result, it is possible to prevent interference due to the high frequency signal leaked from the 57 GHz band transmission processing unit TX to the 80 GHz band reception processing unit RX.
  • a high frequency signal of the 80 GHz band (Mid) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the first communication device 100 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line c in the drawing) and is supplied to the low-noise amplifier 400 for the low frequency channel.
  • the low-noise amplifier 400 for the low frequency channel includes the trap circuit TP_M in which the attenuation frequency is set to the 80 GHz band, as illustrated in FIG. 16(A) , the high frequency signal of the 80 GHz band is sufficiently attenuated by a function of the trap circuit TP_M.
  • the 80 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 57 GHz band (not illustrated).
  • the 80 GHz band transmission processing unit TX to the 57 GHz band reception processing unit RX.
  • a high frequency signal of the 103 GHz band (Low) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the first communication device 100 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line d in the drawing) and is supplied to the low-noise amplifier 400 for the high frequency channel.
  • the low-noise amplifier 400 for the high frequency channel does not include the gain suppressing unit configured to suppress a gain of the 80 GHz band, as illustrated in FIG. 16(C) , a gain in the vicinity of 80 GHz is sufficiently attenuated.
  • the 80 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 103 GHz band (not illustrated). As a result, it is possible to prevent interference due to the high frequency signal leaked from the 103 GHz band transmission processing unit TX to the 80 GHz band reception processing unit RX.
  • the first communication device 100 includes a reception processing unit RX for the high frequency channel (103 GHz band), a transmission processing unit TX for the mid frequency channel (80 GHz band), and a transmission processing unit TX for the low frequency channel (57 GHz band).
  • the second communication device 200 includes a transmission processing unit TX for the high frequency channel, a reception processing unit RX for the mid frequency channel, and a reception processing unit RX for the low frequency channel.
  • the gain suppressing unit (trap circuit) configured to suppress a gain of the high frequency channel is provided in the low-noise amplifier 400 for the mid frequency channel.
  • the gain suppressing unit (trap circuit) is not provided combinations other than the above combination. Compared to the first example, in the second example, it is unnecessary to provide the gain suppressing unit in the first communication device 100.
  • a high frequency signal of the 103 GHz band (High) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the first communication device 100 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line a in the drawing) and is supplied to the low-noise amplifier 400 for the mid frequency channel.
  • the low-noise amplifier 400 for the mid frequency channel includes the trap circuit TP_H in which the attenuation frequency is set to the 103 GHz band, as illustrated in FIG. 16(B) , the high frequency signal of the 103 GHz band is sufficiently attenuated by a function of the trap circuit TP_H.
  • the 103 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 80 GHz band (not illustrated).
  • the 80 GHz band reception processing unit RX the 80 GHz band reception processing unit RX.
  • the other leakage paths represented by dashed lines b, c, and d in the drawing
  • the gain suppressing unit is not used, the interfering wave is not demodulated in the demodulation function unit 8400.
  • the first communication device 100 includes a transmission processing unit TX for the high frequency channel (103 GHz band), a transmission processing unit TX for the mid frequency channel (80 GHz band), and a reception processing unit RX for the low frequency channel (57 GHz band).
  • the second communication device 200 includes a reception processing unit RX for the high frequency channel, a reception processing unit RX for the mid frequency channel, and a transmission processing unit TX for the low frequency channel.
  • the gain suppressing unit (trap circuit) configured to suppress a gain of the mid frequency channel is provided in the low-noise amplifier 400 for the low frequency channel.
  • the gain suppressing unit (trap circuit) is not provided in combinations other than the above combination. Compared to the first example, in the third example, it is unnecessary to provide the gain suppressing unit in the second communication device 200.
  • a high frequency signal of the 80 GHz band (Mid) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the second communication device 200 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line a in the drawing) and is supplied to the low-noise amplifier 400 for the low frequency channel.
  • the low-noise amplifier 400 for the low frequency channel includes the trap circuit TP_M in which the attenuation frequency is set to the 80 GHz band, as illustrated in FIG. 16(A) , the high frequency signal of the 80 GHz band is sufficiently attenuated by a function of the trap circuit TP_M.
  • the 80 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 57 GHz band (not illustrated).
  • the 80 GHz band transmission processing unit TX to the 57 GHz band reception processing unit RX.
  • the other leakage paths represented by dashed lines b, c, and d in the drawing
  • the gain suppressing unit is not used, the interfering wave is not demodulated in the demodulation function unit 8400.
  • FIG. 18 is a diagram illustrating a modification of Embodiment 3.
  • the method that has been described with three channels according to Embodiment 3 is applied in four or more channels.
  • Embodiment 3 although the most fundamental example including three channels has been described when the full-duplex two-way communication and the simplex two-way communication are combined, it may be similarly applied when there are four or more channels.
  • Embodiment 3 is applied when any two channels adjacent to each other are combined.
  • F Y carrier frequency
  • F 1 GHz band a first channel
  • F 2 GHz band a second channel
  • F 3 GHz band a third channel
  • F 4 GHz band a fourth channel
  • F 5 GHz band a fifth channel
  • F 6 GHz band a sixth channel
  • F 7 GHz band a seventh channel
  • FIG. 18 briefly illustrates carrier frequency arrangement of each channel and transmission and reception processing units TX and RX for each channel provided in the first and second communication devices 100 and 200.
  • a thick ascending arrow in a channel on a frequency axis indicates a transmission processing unit TX of the channel and a thick descending arrow indicates a reception processing unit RX of the channel.
  • a solid line between the first and second communication devices 100 and 200 indicates a normal path.
  • a dashed line within the first or second communication device 100 or 200 indicates a leakage path.
  • the first communication device 100 includes an F 1 GHz band transmission processing unit TX, an F 2 GHz band reception processing unit RX, an F 3 GHz band transmission processing unit TX, an F 4 GHz band reception processing unit RX, an F 5 GHz band transmission processing unit TX, an F 6 GHz band transmission processing unit TX, and an F 7 GHz band reception processing unit RX.
  • the second communication device 200 includes an F 1 GHz band reception processing unit RX, an F 2 GHz band transmission processing unit TX, an F 3 GHz band reception processing unit RX, an F 4 GHz band transmission processing unit TX, an F 5 GHz band reception processing unit RX, an F 6 GHz band reception processing unit RX, and an F 7 GHz band transmission processing unit TX.
  • the full-duplex two-way communication may be considered to be applied in each of a combination of adjacent first and second channels, a combination of adjacent second and third channels, a combination of adjacent third and fourth channels, a combination of adjacent fourth and fifth channels, and a combination of adjacent sixth and seventh channels.
  • a trap circuit TP_Y+1 (the attenuation frequency is set to a Y+1 channel band) configured to suppress a gain of a Y+1 channel is provided in the low-noise amplifier 400 for a Y channel for a combination in which the upper-side adjacent channel is the transmission processing unit TX.
  • a trap circuit TP_3 configured to suppress a gain of the third channel is provided in the low-noise amplifier 400 for the second channel
  • a trap circuit TP_5 configured to suppress a gain of the fifth channel is provided in the low-noise amplifier 400 for the fourth channel.
  • a trap circuit TP_2 configured to suppress a gain of the second channel is provided in the low-noise amplifier 400 for the first channel
  • a trap circuit TP_4 configured to suppress a gain of the fourth channel is provided in the low-noise amplifier 400 for the third channel
  • a trap circuit TP_7 configured to suppress a gain of the seventh channel is provided in the low-noise amplifier 400 for the sixth channel.
  • the first communication device 100 includes an F 1 GHz band transmission processing unit TX, an F 2 GHz band reception processing unit RX, an F 3 GHz band reception processing unit RX, an F 4 GHz band transmission processing unit TX, an F 5 GHz band transmission processing unit TX, an F 6 GHz band reception processing unit RX, and an F 7 GHz band transmission processing unit TX.
  • the second communication device 200 includes an F 1 GHz band reception processing unit RX, an F 2 GHz band transmission processing unit TX, an F 3 GHz band transmission processing unit TX, an F 4 GHz band reception processing unit RX, an F 5 GHz band reception processing unit RX, an F 6 GHz band transmission processing unit TX, and an F 7 GHz band reception processing unit RX.
  • the full-duplex two-way communication may be considered to be applied in each of a combination of adjacent first and second channels, a combination of adjacent third and fourth channels, a combination of adjacent fifth and sixth channels, and a combination of adjacent sixth and seventh channels.
  • a trap circuit TP_4 configured to suppress a gain of the fourth channel is provided in the low-noise amplifier 400 for the third channel and a trap circuit TP_7 configured to suppress a gain of the seventh channel is provided in the low-noise amplifier 400 for the sixth channel.
  • a trap circuit TP_2 configured to suppress a gain of the second channel is provided in the low-noise amplifier 400 for the first channel and a trap circuit TP_6 configured to suppress a gain of the sixth channel is provided in the low-noise amplifier 400 for the fifth channel.
  • the trap circuit TP_Y+1 in which the attenuation frequency is set to the Y+1 channel band is provided in the low-noise amplifier 400 for the Y channel.
  • the Y+1 channel band transmission processing unit TX to the Y channel reception processing unit RX through the leakage path.
  • Embodiment 4 is an application example of a mutual interference countermeasure when the full-duplex two-way communication and the simplex two-way communication are combined. Unlike Embodiment 3 described above, in the simplex two-way communication, it is assumed that the mutual interference countermeasure (that is, the method of Embodiment 2) is unnecessary between transmission-sides, whereas the mutual interference countermeasure (that is, the method of Embodiment 2) is necessary between reception-sides. That is, in addition to Embodiment 3, Embodiment 2 is applied when the simplex multiple communication is applied in a combination of two channels which are adjacent to each other. Unlike Embodiment 3, a leakage path of a simplex two-way communication system is also considered.
  • FIG. 19 is a diagram illustrating transmission and reception systems according to Embodiment 4 in which the full-duplex two-way communication and the simplex two-way communication are combined, and is a simplified functional block diagram, focusing on a signal transmission function from a transmission amplifier to a reception amplifier (the low-noise amplifier 400) through the high frequency signal waveguide 308.
  • a transmission amplifier to a reception amplifier (the low-noise amplifier 400) through the high frequency signal waveguide 308.
  • transmission and reception processing units a circuit composed of the amplifier 4 and the low-noise amplifier 400, and a peripheral circuit thereof
  • a signal transmission device 1D in the simplex two-way communication between the first and second communication devices 100 and 200, focusing on the reception processing unit RX for a certain frequency band, the gain suppressing unit (trap circuit) is provided in the low-noise amplifier 400 for a combination in which the upper-side adjacent channel is the transmission processing unit TX.
  • the gain suppressing unit (trap circuit) is not provided for combinations other than the above combination.
  • a signal transmission device 1D_1 of a first example illustrated in FIG. 19(A) is a modification of the first example according to Embodiment 3.
  • the simplex two-way communication using high and low frequency channels can be applied to the device and leakage paths (represented by dashed lines e and f in the drawing) are formed therein. Since the channels are not adjacent to each other, there is no reason (necessity) to apply Embodiment 2.
  • a signal transmission device 1D_2 of a second example illustrated in FIG. 19(B) is a modification of the second example according to Embodiment 3.
  • the simplex two-way communication using mid and low frequency channels can be applied to the device and leakage paths (represented by dashed lines e and f in the drawing) are formed therein. Since the channels are adjacent to each other, there is a reason to apply Embodiment 2.
  • a trap circuit TP_M in which the attenuation frequency is set to the 80 GHz band is provided in the low-noise amplifier 400 for the low frequency channel. That is, the trap circuit TP_M is further added to the second example according to Embodiment 3.
  • the high frequency signal of the 80 GHz band (Mid) having higher power than the 57 GHz band (Low) jumps to the reception antenna RXANT through a leakage path (represented by a dashed line e in the drawing), and is supplied to the low-noise amplifier 400 for the low frequency channel. Since the trap circuit TP_M in which the attenuation frequency is set to the 80 GHz band is provided in the low-noise amplifier 400 for the low frequency channel, as illustrated in FIG. 16(A) , the high frequency signal of the 80 GHz band is sufficiently attenuated by a function of the trap circuit TP_M.
  • the 80 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 57 GHz band (not illustrated).
  • the 80 GHz band transmission processing unit TX to the 57 GHz band reception processing unit RX through the leakage path e.
  • a signal transmission device 1D_3 of a third example illustrated in FIG. 19(C) is a modification of the third example according to Embodiment 3.
  • the simplex two-way communication using high and mid frequency channels can be applied to the device and leakage paths (represented by dashed lines e and f in the drawing) are formed therein. Since the channels are adjacent to each other, there is a reason to apply Embodiment 2.
  • a trap circuit TP_H in which the attenuation frequency is set to the 103 GHz band is provided in the low-noise amplifier 400 for the mid frequency channel. That is, the trap circuit TP_H is further added to the third example according to Embodiment 3.
  • the high frequency signal of the 103 GHz band (High) having higher power than the 80 GHz band (Low) jumps to the reception antenna RXANT through a leakage path (represented by a dashed line e in the drawing), and is supplied to the low-noise amplifier 400 for the mid frequency channel. Since the trap circuit TP_H in which the attenuation frequency is set to the 103 GHz band is provided in the low-noise amplifier 400 for the high frequency channel, as illustrated in FIG. 16(B) , the high frequency signal of the 103 GHz band is sufficiently attenuated by a function of the trap circuit TP_H.
  • the 103 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 80 GHz band (not illustrated).
  • the 80 GHz band it is possible to prevent interference due to the high frequency signal leaked from the 103 GHz band transmission processing unit TX to the 80 GHz band reception processing unit RX through the leakage path e.
  • FIG. 20 is a diagram illustrating a modification of Embodiment 4.
  • the method that has been described with three channels according to Embodiment 4 is applied in four or more channels.
  • Embodiment 4 although the most fundamental example including three channels has been described, it may be similarly applied when there are four or more channels. As an example, a description will be made based on the modification of Embodiment 3 illustrated in FIG. 18 .
  • a trap circuit TP_Y+1 (the attenuation frequency is set to the Y+1 channel band) configured to suppress a gain of the Y+1 channel is provided in the low-noise amplifier 400 for the Y channel for a combination in which the simplex two-way communication is applied and the upper-side adjacent channel is the transmission processing unit TX (a combination enclosed in an ellipse in the drawing).
  • the simplex two-way communication may be considered to be applied to a combination of adjacent fifth and sixth channels.
  • a trap circuit TP_6 configured to suppress a gain of the sixth channel is provided in the low-noise amplifier 400 for the fifth channel.
  • the simplex two-way communication may be considered to be applied to a combination of adjacent second and third channels and a combination of adjacent fourth and fifth channels.
  • a trap circuit TP_3 configured to suppress a gain of the third channel is provided in the low-noise amplifier 400 for the second channel
  • a trap circuit TP_5 configured to suppress a gain of the fifth channel is provided in the low-noise amplifier 400 for the fourth channel.
  • the trap circuit TP_Y+1 in which the attenuation frequency is set to the Y+1 channel band is provided in the low-noise amplifier 400 for the Y channel.
  • the Y+1 channel band transmission processing unit TX to the Y channel reception processing unit RX through the leakage path.
  • the second example of the mutual interference countermeasure method uses the asymmetric open-loop gain frequency characteristic of the amplifier circuit and "compensates for an attenuation shortage due to the asymmetric gain characteristic of the amplifier.”
  • the signal suppressing unit configured to suppress a signal component of a channel other than the self channel is provided outside the amplifier (provided, before demodulation processing).
  • the signal suppressing unit for example, the trap circuit, is employed.
  • FIGS. 21 and 22 are diagrams illustrating transmission and reception systems according to Embodiment 5.
  • FIG. 21 illustrates first to third examples
  • FIG. 22 illustrates fourth to sixth examples. All examples illustrate modifications of Embodiment 4 and may also be similarly applied to Embodiments 1 to 3.
  • each of the first to third examples illustrated in FIGS. 21(A) to 21(C) is a modification of the first to third examples according to Embodiment 4.
  • the signal suppressing unit (the trap circuit 601 or 602) is not provided in the low-noise amplifier 400 but is provided in a pre-stage of the low-noise amplifier 400.
  • each of the first to third examples illustrated in FIGS. 22(A) to 22(C) is a modification of the first to third examples according to Embodiment 4.
  • the signal suppressing unit (the trap circuit 601 or 602) is not provided in the low-noise amplifier 400 but is provided in a post-stage (a pre-stage of the demodulation function unit 8400) of the low-noise amplifier 400.
  • the second example of the mutual interference countermeasure method since a signal level of an interference channel is attenuated by a function of the signal suppressing unit (the trap circuit 601 or 602), an interference channel component is not demodulated in the demodulation function unit 8400 (not illustrated) provided in a post-stage of the low-noise amplifier 400. As a result, it is possible to prevent mutual interference. Since the asymmetric open-loop gain frequency characteristic of the amplifier circuit is used, it is sufficient that the signal suppressing unit has an attenuation characteristic capable of compensating for an attenuation shortage due to the asymmetric gain frequency characteristic. The attenuation characteristic may allow small attenuation in a target channel position. For example, when the trap circuit is used, a trap amount may be small and it may be implemented in a simple configuration.
  • the third example of the mutual interference countermeasure method does not use the asymmetric open-loop gain frequency characteristic of the amplifier circuit.
  • the third example may be applied regardless of whether the open-loop gain frequency characteristic of the amplifier circuit is symmetric or asymmetric.
  • the third example may be applied even when the amplifier circuit is a broadband amplifier circuit having no frequency (wavelength) selectivity. Even in this case, the gain suppressing unit is not provided in the reception processing units for all channels, and the gain suppressing unit configured to suppress a gain of a channel other than the self channel is provided in any reception processing unit. In this manner, it is possible to prevent interference from a channel for which at least a gain suppressing unit is provided.
  • FIGS. 23 and 24 are diagrams illustrating transmission and reception systems according to Embodiment 6.
  • FIG. 23 illustrates first to third examples and FIG. 24 illustrates fourth to sixth examples.
  • FIG. 23 illustrates a modification of Embodiment 4 and FIG. 24 illustrates a modification of Embodiment 5, they may be similarly applied to other Embodiments.
  • Each of the first to third examples illustrated in FIGS. 23(A) to 23(C) is a modification of the first to third examples according to Embodiment 4 in which the gain suppressing unit (the trap circuit 601 or 602) is provided in the low-noise amplifier 400.
  • Each of the fourth to sixth examples illustrated in FIGS. 24(A) to 24(C) is a modification of the first to third examples according to Embodiment 5 in which the gain suppressing unit (the trap circuit 601 or 602) is provided in the pre-stage of the low-noise amplifier 400.
  • the low-noise amplifier 400 does not have distinct and asymmetric open-loop gain frequency characteristic.
  • a flat amplifier small undulation is allowed
  • a gain of all channel bands is substantially flat is used. Since the asymmetric open-loop gain frequency characteristic of the low-noise amplifier 400 is not used, it is necessary for the gain suppressing unit (the trap circuit 601 or 602) to have a great attenuation characteristic.
  • the third example of the mutual interference countermeasure method is applied, in a system in which at least a gain suppressing unit is provided, a signal level of an interference channel is attenuated by a function of the gain suppressing unit (the trap circuit 601 or 602). Therefore, an interference channel component is not demodulated in the demodulation function unit 8400 (not illustrated) provided in a post-stage of the low-noise amplifier 400, and thus it is possible to prevent interference. Since the asymmetric open-loop gain frequency characteristic of the amplifier circuit is not used, compared to Embodiment 4 or 5 or the like, it is necessary for the gain suppressing unit to have an attenuation characteristic allowing great attenuation in a target channel position. For example, when the trap circuit is used, a trap circuit having a large amount of trap may be used.
  • FIGS. 25 to 26 are diagrams illustrating Embodiment 7.
  • FIG. 25 is a diagram illustrating a frequency characteristic example of the low-noise amplifier 400 used in Embodiment 7.
  • FIG. 26 is a diagram illustrating transmission and reception systems according to Embodiment 7.
  • interference (mutual interference) from a channel adjacent in both sides is suppressed by the gain suppressing unit using, for example, the trap circuit
  • the technology disclosed in the specification is not limited thereto.
  • the technology disclosed in the specification is not limited to the adjacent channel.
  • the influence of the channel (interference channel) other than the self channel may be suppressed by the gain suppressing unit using the trap circuit or the like. For example, it is possible to prevent an influence from another channel adjacent to the adjacent channel.
  • FIG. 25 illustrates the frequency characteristic example of the low-noise amplifier 400 used in Embodiment 7.
  • the open-loop frequency characteristic of the low-noise amplifier 400 has frequency selectivity for a desired channel signal (carrier frequency Fc), that is, the self channel, and is sufficiently attenuated in both of a lower-side adjacent channel signal (carrier frequency F D ) and an upper-side adjacent channel signal (carrier frequency F U1 ).
  • the gain suppressing unit is applied to match an attenuation frequency (trap position) in this channel signal (carrier frequency F U2 ), and thus it is possible to attenuate the channel signal component (carrier frequency F U2 ). Since the channel signal component (carrier frequency F U2 ) may be set equal to or less than the reception limit level, the channel signal component (carrier frequency F U2 ) is not demodulated. As a result, it is possible to prevent mutual interference.
  • FIG. 26 is a diagram illustrating transmission and reception systems according to Embodiment 7 in which the method is applied and illustrates a modification of the third example according to Embodiment 3 illustrated in FIG. 17(C) .
  • the gain suppressing unit (trap circuit) configured to suppress a gain of the high frequency channel is provided in the low-noise amplifier 400 for the low frequency channel.
  • the gain suppressing unit (trap circuit) is not provided in combinations other than the above combination. Incidentally, there is no reason (necessity) to apply the first example according to Embodiment 3 illustrated in FIG. 17(A) or the second example according to Embodiment 3 illustrated in FIG. 17(B) .
  • a high frequency signal of the 103 GHz band (High) is coupled with the high frequency signal waveguide 308 through the transmission antenna TXANT and is transmitted to the second communication device 200 side.
  • the high frequency signal jumps to the self reception antenna RXANT through a leakage path (represented by a dashed line b in the drawing) and is supplied to the low-noise amplifier 400 for the low frequency channel.
  • the low-noise amplifier 400 for the low frequency channel includes the trap circuit TP_H in which the attenuation frequency is set to the 103 GHz band, as illustrated in FIG. 25(B) , the high frequency signal of the 103 GHz band is sufficiently attenuated by a function of the trap circuit TP_H.
  • the 103 GHz band is not demodulated in the post-stage demodulation function unit 8400 for the 57 GHz band (not illustrated).
  • the 103 GHz band transmission processing unit TX to the 57 GHz band reception processing unit RX.
  • the other leakage paths represented by dashed lines a, c, and d in the drawing
  • the gain suppressing unit is not used, the interfering wave is not demodulated in the demodulation function unit 8400.
  • a signal transmission device including:
  • the reception processing unit includes an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit includes a gain suppressing unit provided in the amplifier, and when the full-duplex two-way communication is applied in any combination of two channels, the gain suppressing unit is configured to suppress a gain of a channel other than the self channel, the channel having an insufficient attenuation degree in a gain frequency characteristic.
  • the signal transmission device wherein the combination of two channels has a relation of mutually adjacent channels, and the gain suppressing unit is configured to suppress a gain of a channel that has an insufficient attenuation degree in the gain frequency characteristic, the channel being one of a lower-side adjacent channel and an upper-side adjacent channel.
  • the signal transmission device according to supplementary note A3, wherein the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel, and the gain suppressing unit provided in a lower-side adjacent channel amplifier is configured to suppress a gain of the upper-side adjacent channel.
  • the signal transmission device according to supplementary note A4, further including:
  • the signal transmission device according to supplementary note A4, further including:
  • the signal transmission device according to supplementary note A4, further including:
  • the gain suppressing unit when simplex two-way communication is applied in any combination of two channels, is configured to suppress a gain of a channel other than the self channel, the channel having an insufficient attenuation degree in the gain frequency characteristic.
  • the signal transmission device wherein the combination of two channels has a relation of mutually adjacent channels, and the gain suppressing unit is configured to suppress a gain of a channel that has an insufficient attenuation degree in the gain frequency characteristic, the channel being one of a lower-side adjacent channel and an upper-side adjacent channel.
  • the signal transmission device further including:
  • the signal transmission device according to supplementary note A7, further including:
  • a signal transmission device including:
  • the reception processing unit includes an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit includes a gain suppressing unit provided in the amplifier, and when the simplex two-way communication is applied in any combination of two channels, the gain suppressing unit is configured to suppress a gain of a channel other than the self channel, the channel having an insufficient attenuation degree in a gain frequency characteristic.
  • the signal transmission device according to supplementary note A13 wherein the combination of two channels has a relation of mutually adjacent channels, and the gain suppressing unit is configured to suppress a gain of a channel that has an insufficient attenuation degree in the gain frequency characteristic, the channel being one of a lower side adjacent channel and an upper side adjacent channel.
  • the signal transmission device according to any one of supplementary note A1 to supplementary note A15, wherein the gain suppressing unit is composed of a trap circuit.
  • the trap circuit includes a serial resonance circuit having an inductor and a capacitor.
  • a receiving circuit in which:
  • a receiving circuit including:
  • An electronic apparatus including:
  • An electronic apparatus including:
  • a signal transmission device including:
  • the reception processing unit includes an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit includes a gain suppressing unit provided in the amplifier, and the gain suppressing unit is configured to suppress a gain of a channel, other than the self channel, having an insufficient attenuation degree in a gain frequency characteristic.
  • the gain suppressing unit is configured to suppress a gain of either lower-side or upper-side adjacent channel that has an insufficient attenuation degree in the gain frequency characteristic.
  • the signal transmission device according to supplementary note B3, wherein the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel, and the gain suppressing unit is configured to suppress a gain of the upper-side adjacent channel.
  • the signal transmission device according to supplementary note B3, wherein the amplifier includes the gain suppressing unit when full-duplex two-way communication is applied in any combination of two channels which are adj acent to each other.
  • the signal transmission device includes a first channel transmission processing unit, a second channel reception processing unit, and a third channel transmission processing unit
  • the second communication device includes a first channel reception processing unit, a second channel transmission processing unit, and a third channel reception processing unit
  • a carrier frequency of a second channel is set higher than that of a first channel
  • a carrier frequency of a third channel is set higher than that of the second channel
  • the full-duplex two-way communication is applicable to a combination of the second and first channels and a combination of the second and third channels
  • the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel
  • an amplifier of the first channel reception processing unit includes a gain suppressing unit configured to suppress a gain of the second channel
  • an amplifier of the second channel reception processing unit includes a gain suppressing unit configured to suppress a gain of the
  • the signal transmission device includes a first channel transmission processing unit, a second channel transmission processing unit, and a third channel reception processing unit
  • the second communication device includes a first channel reception processing unit, a second channel reception processing unit, and a third channel transmission processing unit
  • a carrier frequency of a second channel is set higher than that of a first channel
  • a carrier frequency of a third channel is set higher than that of the second channel
  • the full-duplex two-way communication is applicable to a combination of the third and first channels and a combination of the third and second channels
  • the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel
  • an amplifier of the second channel reception processing unit includes a gain suppressing unit configured to suppress a gain of the third channel.
  • the signal transmission device includes a first channel reception processing unit, a second channel transmission processing unit, and a third channel transmission processing unit
  • the second communication device includes a first channel transmission processing unit, a second channel reception processing unit, and a third channel reception processing unit
  • a carrier frequency of a second channel is set higher than that of a first channel
  • a carrier frequency of a third channel is set higher than that of the second channel
  • the full-duplex two-way communication is applicable to a combination of the first and second channels and a combination of the first and third channels
  • the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel
  • an amplifier of the first channel reception processing unit includes a gain suppressing unit configured to suppress a gain of the second channel.
  • the signal transmission device according to supplementary note B5, wherein the amplifier includes the gain suppressing unit when the number of channels is equal to or greater than three in total and simplex two-way communication is applied in any combination of two channels which are adjacent to each other.
  • the signal transmission device according to supplementary note B9, wherein the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more inefficient gain attenuation than a low frequency side with respect to the self channel, and the gain suppressing unit is configured to suppress a gain of the upper-side adjacent channel.
  • the signal transmission device according to supplementary note B10, further including:
  • the signal transmission device according to supplementary note B10, further including:
  • the signal transmission device according to supplementary note B3, wherein the amplifier includes the gain suppressing unit when simplex two-way communication is applied in any combination of two channels which are adjacent to each other.
  • the signal transmission device according to supplementary note B2, wherein the gain suppressing unit is composed of a trap circuit.
  • the signal transmission device according to supplementary note B 14, wherein the trap circuit includes a serial resonance circuit having an inductor and a capacitor.
  • the signal transmission device includes two cascade-connected transistors and an amplifier stage having an inductor in which a constant is set to have frequency selectivity for the self channel as a load, and the trap circuit is connected between a cascade connection point of the two transistors and a reference potential point.
  • the signal transmission device according to supplementary note B16, wherein the amplifier includes a plurality of amplifier stages and the trap circuit is provided in a first amplifier stage.
  • the signal transmission device according to supplementary note B16, wherein the amplifier includes a plurality of amplifier stages and the trap circuit is provided in at least one amplifier stage other than a first stage.
  • a receiving circuit including:
  • a signal transmission device in which:
  • the reception processing unit includes an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit includes a gain suppressing unit provided in the amplifier, and the gain suppressing unit configured to suppress a gain of either lower-side or upper-side adjacent channel that has an insufficient attenuation degree in a gain frequency characteristic.
  • the signal transmission device according to supplementary note C2, wherein the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel, and the gain suppressing unit provided in a lower-side adjacent channel amplifier is configured to suppress a gain of the upper-side adjacent channel.
  • the signal transmission device according to supplementary note C1, wherein the gain suppressing unit is composed of a trap circuit.
  • the trap circuit includes a serial resonance circuit having an inductor and a capacitor.
  • the signal transmission device according to supplementary note C5, wherein pattern formation of the inductor is performed in a plurality of wiring layers and inductors of each layer are connected in parallel through an electric circuit.
  • the signal transmission device according to supplementary note C5, wherein the capacitor uses a distributed capacity when pattern formation of the inductor is performed.
  • the signal transmission device includes two cascade-connected transistors and an amplifier stage having an inductor in which a constant is set to have frequency selectivity for the self channel as a load, and the trap circuit is connected between a cascade connection point of the two transistors and a reference potential point.
  • the signal transmission device according to supplementary note C8, wherein the amplifier includes a plurality of amplifier stages and the trap circuit is provided in a first amplifier stage.
  • the signal transmission device according to supplementary note C8, wherein the amplifier includes a plurality of amplifier stages and the trap circuit is provided in at least one amplifier stage other than a first stage.
  • the signal transmission device according to supplementary note C8, wherein the amplifier includes a plurality of amplifier stages and the trap circuit is provided in a first amplifier stage and at least one amplifier stage other than the first stage.
  • a switch configured to selectively use the trap circuit is provided in at least either of the gain suppressing unit provided in the first amplifier stage or the trap circuit provided in at least one amplifier stage other than the first stage.
  • the signal transmission device according to supplementary note C2, wherein the amplifier is formed in a complementary metal oxide semiconductor.
  • the signal transmission device according to supplementary note C2, wherein the transmission and reception processing units are coupled by a waveguide.
  • the signal transmission device according to supplementary note C15, wherein the waveguide is made of a dielectric material.
  • a receiving circuit in which:
  • the reception processing unit includes an amplifier configured to have frequency selectivity for the self channel and amplify a received signal
  • the signal suppressing unit includes a gain suppressing unit provided in the amplifier, and the gain suppressing unit is configured to suppress a gain of either lower-side or upper-side adjacent channel that has an insufficient attenuation degree in the gain frequency characteristic.
  • the electronic apparatus according to supplementary note C19, wherein the gain frequency characteristic of the amplifier having no gain suppressing unit is shown such that a high frequency side has more insufficient gain attenuation than a low frequency side with respect to the self channel, and the gain suppressing unit provided in a lower-side adjacent channel amplifier is configured to suppress a gain of the upper-side adjacent channel.

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  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
EP11870732.2A 2011-08-09 2011-09-02 Signal transmission device, reception circuit, and electronic device Withdrawn EP2744127A1 (en)

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JP2011174068A JP2013038646A (ja) 2011-08-09 2011-08-09 信号伝送装置、受信回路、及び、電子機器
PCT/JP2011/070005 WO2013021510A1 (ja) 2011-08-09 2011-09-02 信号伝送装置、受信回路、及び、電子機器

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WO2013021510A1 (ja) 2013-02-14
US20140178064A1 (en) 2014-06-26

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