EP2627151A1 - Dispositif électroluminescent organique - Google Patents

Dispositif électroluminescent organique Download PDF

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Publication number
EP2627151A1
EP2627151A1 EP11830670.3A EP11830670A EP2627151A1 EP 2627151 A1 EP2627151 A1 EP 2627151A1 EP 11830670 A EP11830670 A EP 11830670A EP 2627151 A1 EP2627151 A1 EP 2627151A1
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EP
European Patent Office
Prior art keywords
film
gas barrier
distribution curve
layer
barrier layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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EP11830670.3A
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German (de)
English (en)
Inventor
Yoshinobu Ono
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Sumitomo Chemical Co Ltd
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Sumitomo Chemical Co Ltd
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Publication of EP2627151A1 publication Critical patent/EP2627151A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • F21Y2115/15—Organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to an organic EL device, an illuminating device, a surface light source device and a display device.
  • the organic EL element deteriorates by being exposed to the outside air, and thus, is usually provided on a film having high gas barrier characteristics that is difficult to pass oxygen, moisture and the like therethrough.
  • films having such high gas barrier characteristics there is proposed a film formed by depositing, on a plastic base material, a thin film composed of inorganic oxides such as silicon oxide, silicon nitride, silicon nitride oxide and aluminum oxide.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a film having high gas barrier characteristics using such a deposition method, for example, in Japanese Unexamined Patent Application Publication No. 4-89236 (Patent Literature 1), there is disclosed a film having a stacked evaporated film layer formed by stacking two or more layers of evaporated films of a silicon oxide.
  • Patent Literature 2 Japanese Unexamined Patent Application Publication (Translation of PCT Application) No. 2002-532850
  • Patent Literature 1 had problems in which the gas barrier characteristics were not necessarily sufficient and, by being subjected to bending, the gas barrier characteristics lowered.
  • a purpose of the present invention is to provide an organic EL device including a film that is provided with high gas barrier characteristics, has gas barrier characteristics that are difficult to be lowered by bending, and is capable of being formed in a short time by simple process.
  • the present invention relates to an organic EL element including a first film, a second film disposed facing the first film, and an organic EL element disposed between the first film and the second film.
  • the second film seals the organic EL element in conjunction with the first film.
  • the second film has a gas barrier layer containing silicon (silicon atoms), oxygen (oxygen atoms) and carbon (carbon atoms).
  • the first film may have a second gas barrier layer containing silicon, oxygen and carbon.
  • the distribution curve of silicon, the distribution curve of oxygen and the distribution curve of carbon of the second gas barrier layer according to an embodiment meet the conditions (i), (ii) and (iii).
  • the present invention relates to an illuminating device, a surface light source device and a display device having the organic EL device.
  • an organic EL device including a film that is provided with high gas barrier characteristics, has gas barrier characteristics hardly lowered by bending, and is capable of being formed in a short time by a simple process.
  • the organic EL device has a first film, an organic EL element, and a second film that is disposed on the first film with the organic EL element interposed between the first film and the second film, and that seals the organic EL element in conjunction with the first film. That is, the second film is disposed facing the first film, and the organic EL element is interposed between the first film and the second film.
  • the organic EL element to be mounted on the organic EL device may be an element of any type.
  • an organic EL device provided with the element of top emission type will be explained
  • Fig. 2 an organic EL device provided with the element of bottom emission type will be explained.
  • Fig. 1 is a cross-sectional view showing schematically the organic EL device of the present embodiment.
  • an organic EL device 13 of the embodiment shown in Fig. 1 on a first film 1, an organic EL element 2 is mounted.
  • a second film 11 is disposed on the first film 1, with the organic EL element 2 interposed between the first film 1.
  • the second film 11 seals the organic EL element 2 in conjunction with the first film 1.
  • the first film 1 and the second film 11 are bonded together via an adhesion layer 4 provided therebetween.
  • the organic EL device 13 may include, if necessary, a protective layer 3 that covers the organic EL element 2 and is interposed between the organic EL element 2 and the adhesion layer 4. By providing the protective layer 3, it is possible to protect the organic EL element 2 from the adhesion layer 4.
  • the organic EL element 2 of the present embodiment shown in Fig. 1 is an element of top emission type, and emits light toward the second film 11. Therefore, the second film 11 is necessary to be formed with a member that allows light to pass through.
  • the first film 1 corresponding to the support substrate in the present embodiment may be formed with an opaque member that does not allow light to pass through.
  • the metallic film has high gas barrier characteristics as compared with plastic films and the like and thus, can enhance gas barrier characteristics of the organic EL device.
  • the metallic film for example, it is possible to use a thin plate of Al, Cu or Fe, and a thin plate of an alloy such as stainless steel.
  • the second film 11 has a gas barrier layer 5 containing silicon atoms, oxygen atoms and carbon atoms.
  • the second film 11 includes a base material 6, and the gas barrier layer 5 provided on the main surface on the organic EL element 2 side of the base material 6.
  • the gas barrier layer 5, by meeting conditions (i), (ii) and (iii) to be described later, includes high gas barrier characteristics, and furthermore, can suppress the lowering of the gas barrier characteristics when subjected to bending.
  • both the first film 1 and the second film 11 show high gas barrier characteristics, and thus it is possible to realize the organic EL device having both higher durability and gas barrier characteristics.
  • Fig. 2 is a cross-sectional view showing schematically an organic EL device 13 of another embodiment.
  • the organic EL device 13 of the embodiment shown in Fig. 2 differs from the embodiment shown in Fig. 1 in the organic EL element and the first film 1.
  • the organic EL element 2 of the present embodiment is the element of bottom emission type, and emits light toward the first film 1 corresponding to the support substrate. Therefore, it is necessary that the first film 1 is a film exhibiting optical transparency.
  • the first film 1 of the present embodiment is not particular limited as long as it is a film exhibiting optical transparency, and, from the viewpoint of gas barrier characteristics, has preferably the second gas barrier layer 8 containing silicon atoms, oxygen atoms and carbon atoms, in the same manner as the second film 11.
  • the first film 1 is composed of a base material 7, and the second gas barrier layer 8 provided on the main surface on the organic EL element 2 side of the base material 7.
  • the organic EL device of the embodiment shown in Fig. 2 in place of the organic EL element of bottom emission type, it is also possible to provide the organic EL element of double-side light emission type.
  • the organic EL element may be sealed by the first film and the second film.
  • an additional film may furthermore be bonded.
  • Additional films include a protective film protecting the surface of the organic EL device, an antireflection film preventing the reflection of outside light entering the organic EL device, a light extraction film having a function of enhancing light extraction efficiency, an optical functional film for adjusting phase and polarization of light, optical films having a configuration in which plural films selected from these are stacked, and the like.
  • the additional film is bonded to one surface or both surfaces of the first film and/or the second film.
  • the adhesion layer is a layer that causes the first film and the second film to adhere in a state where the organic EL element is disposed between these. It is preferable that an adhesive to be used in the adhesion layer has high gas barrier characteristics.
  • the organic EL device as shown in Fig. 1 in which light emitted from the organic EL element 2 is emitted to the outer world through an adhesion layer 4, it is preferable that the light transmittance of the adhesion layer 4 is high. In this case, from the viewpoint of the light extraction efficiency, it is preferable that the absolute value of difference in refractive indices of the layer in contact with the adhesion layer 4 and the adhesion layer 4 is as small as possible.
  • a curable adhesive such as a heat-curable adhesive and a photo-curable adhesive is favorable.
  • the heat-curable resin adhesive includes an epoxy-based adhesive, and an acrylate-based adhesive and the like.
  • Examples of the epoxy-based adhesive include an adhesive containing an epoxy compound selected from bisphenol A type epoxy resin, a bisphenol F type epoxy resin and a phenoxy resin.
  • acrylate-based adhesive examples include adhesives containing a monomer as a main component selected from acrylic acid, methacrylic acid, ethyl acrylate, butyl acrylate, 2-hexyl acrylate, acrylamide, acrylonitrile, hydroxyl acrylate, and the like, and containing a monomer capable of copolymerization with the main component.
  • the photo-curable adhesive includes a radical-based adhesive and a cation-based adhesive, and the like.
  • the radical-based adhesive includes an epoxy acrylate, an ester acrylate, an adhesive containing an ester acrylate, and the like.
  • the cation-based adhesive includes an adhesive containing an epoxy-based resin, a vinyl ether-based resin and the like.
  • the protective layer is provided so as to cover the organic EL element. By providing the protective layer, it is possible to protect the organic EL element from the adhesion layer.
  • An electron injection layer and a cathode including the organic EL element contain, as a major component, usually, a material that is unstable in the air, and thus, during the period after the formation of an organic EL element until the organic EL element is sealed by bonding the second film, there is a risk of deterioration of the electron injection layer and the cathode by moisture, oxygen and the like in an atmosphere. Accordingly, it is preferable that the protective layer has a function of blocking off the moisture, oxygen and the like in the atmosphere and of protecting the organic EL element from these, during the period until the organic EL element is sealed by the second film.
  • Materials for use in the protective layer include metal materials stable in the air, inorganic insulating materials, organic insulating materials excellent in barrier characteristics and the like.
  • the metal material is selected, for example, from Al, Cu, Ag, Au, Pt, Ti, Cr, Co and Ni.
  • the inorganic insulating material is selected, for example, from SiO 2 , SiN, SiO x N y and SiO x C y .
  • As the organic insulating material parylene and the like are used.
  • the protective layer formed from the metal material is formed, for example, by a vacuum evaporation method, a sputtering method, or a plating method.
  • the protective layer formed from the inorganic insulating material is formed, for example, by a sputtering method, a CVD method, or a laser ablation method.
  • the protective layer formed from the organic insulating material is formed, for example, by a film-forming method including a vacuum evaporation of monomer gas, and polymerization at the evaporated film (surface to be coated) containing the monomer.
  • Fig. 3 is a drawing showing roughly an apparatus manufacturing the organic EL device.
  • the first film 1 and the second film 11s are bonded together, and, furthermore, an additional film 820 is bonded to the second film 11.
  • the organic EL element has been formed previously.
  • An unwinding roll 500 sends out the first film 1 on which the organic EL element has been formed previously.
  • the unwinding roll 510 sends out the second film 11.
  • an adhesive is coated by a coating apparatus 610 for a first adhesion layer, and the first adhesion layer is formed.
  • first bonding rolls 511 and 512 the first film 1 and the second film 11 that has been supplied through a conveying roll 513 are bonded together via the first adhesion layer, and furthermore, by a curing apparatus 611 for the first adhesion layer, the first adhesion layer is cured (solidified).
  • an adhesive is coated by a coating apparatus 620 for a second adhesion layer provided on the downstream side of the curing apparatus 611, and the second adhesion layer is further formed.
  • second bonding rolls 521 and 522 there are bonded together the second film 11 and the additional film 820 that has been sent out from the unwinding roll 520 and that has been supplied through a conveying roll 523 via the second adhesion layer, and, furthermore, by a curing apparatus 621 for the second adhesion layer, the second adhesion layer is cured (solidified).
  • the formed organic EL device is wound by a winding roll 530.
  • the additional film for example, the aforementioned film is used.
  • one additional film is bonded, but two or more additional films may be bonded sequentially.
  • the order of the bonding is appropriately changed depending on the stacking order of the organic EL device.
  • One of characteristics of the organic EL device of the present embodiment lies in the second film, in particular, in the gas barrier layer 5 thereof.
  • the second film has a gas barrier layer containing silicon atoms, oxygen atoms and carbon atoms.
  • a gas barrier layer containing silicon atoms, oxygen atoms and carbon atoms.
  • condition of (i) means, in other words, that, in 90% or more of the region of the gas barrier layer in the thickness direction, the following formula (1) or (2) is met.
  • the above-mentioned gas barrier layer is formed, usually, on a base material. That is, the second film includes the base material, and the gas barrier layer formed on the base material. Examples of the base material of the second film includes a colorless and transparent resin film or resin sheet.
  • the resin to be used for the base material like this is selected, for example, from polyester-based resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polyolefin-based resins such as polyethylene (PE), polypropylene (PP) and a cyclic polyolefin; a polyamide-based resin; a polycarbonate-based resin; a polystyrene-based resin; a polyvinyl alcohol-based resin; a saponified ethylene-vinyl acetate copolymer; a polyacrylonitrile-based resin; an acetal-based resin; and a polyimide-based resin.
  • polyester-based resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN)
  • polyolefin-based resins such as polyethylene (PE), polypropylene (PP) and a cyclic polyolefin
  • a polyamide-based resin such as polyethylene (PE), poly
  • polyester-based resin and a polyolefin-based resin are preferable, and PET and PEN are particularly preferable.
  • These resins may be used in one kind alone, or in a combination of two or more kinds.
  • the thickness of the base material of the second film is in consideration of the stability in manufacturing the second film. It is preferable that, from the view point that the conveyance of the film is possible in vacuum, the thickness of the base material of the second film is in the range of 5 to 500 ⁇ m.
  • the thickness of the base material of the second film is 50 to 200 ⁇ m, and is further preferable that the thickness is 50 to 100 ⁇ m.
  • the base material of the second film it is preferable to subject the base material of the second film to a surface activation treatment for cleaning the surface.
  • a surface activation treatment for cleaning the surface.
  • surface activation treatments include a corona treatment, a plasma treatment, and a flame treatment.
  • the gas barrier layer is formed on at least one surface of the base material. It is sufficient that the second film according to the present embodiment includes the gas barrier layer that contains, in at least one layer, silicon atoms, oxygen atoms and carbon atoms and that meets all the above conditions (i) to (iii). For example, the second film may have another layer that does not meet at least any of the above conditions (i) to (iii).
  • the gas barrier layer or the other layer may further contain nitrogen atoms, aluminum atoms and the like.
  • the gas barrier characteristics of the second film lower. It is preferable that the region meeting the formula (1) or (2) occupies 90% or more of the thickness of the gas barrier layer. The ratio is more preferably 95% or more, further preferably 100%.
  • the distribution curve of carbon has at least one extremum.
  • the distribution curve of carbon it is more preferable that the distribution curve of carbon has two extrema, and it is further preferable to have three or more extrema.
  • the distribution curve of carbon does not have an extremum, gas barrier characteristics lower when the second film to be obtained is bent.
  • the distance between neighboring extrema of the distribution curve of carbon in the thickness direction is 200 nm or less, and it is more preferable that the distance is 100 nm or less.
  • the extremum denotes a relative maximum value or a relative minimum value in the distribution curve obtained by plotting the atomic ratio of an element for the distance from the surface of the gas barrier layer in the thickness direction of the gas barrier layer.
  • the relative maximum value denotes the atomic ratio of an element at a point, in the above distribution curve, at which the value of the atomic ratio of the element changes from increase to decrease along with the change of the distance from the surface of the gas barrier layer, and, at the point the value of the atomic ratio of the element at a position at which the distance from the surface of the gas barrier layer in the thickness direction of the gas barrier layer from the point has further changed by 20 nm, decreases by 3 at% or more in comparison with the value of the atomic ratio of the element at the point.
  • the relative minimum value denotes the atomic ratio of an element at a point, in the above distribution curve, at which the value of the atomic ratio of the element changes from decrease to increase along with the change of the distance from the surface of the gas barrier layer, and, at the point the value of the atomic ratio of the element at a position at which the distance from the surface of the gas barrier layer in the thickness direction of the gas barrier layer from the point has further changed by 20 nm, increases by 3 at% or more in comparison with the value of the atomic ratio of the element at the point.
  • the difference between the maximum value and the minimum value of the atomic ratio of the carbon in the distribution curve of carbon is 5 at% or more.
  • the difference between the maximum value and the minimum value of the atomic ratio of the carbon is 6 at% or more, and it is further more preferable that the difference is 7 at% or more.
  • the upper limit of the difference is, although not particularly limited, usually, approximately 30 at%.
  • the distribution curve of oxygen of the gas barrier layer has at least one extremum, is more preferable that the curve has at least two extrema, and is furthermore preferable that curve has at least three extrema.
  • the distribution curve of oxygen has the extremum, there is such a tendency that the lowering in the gas barrier characteristics by bending of the second film is further hard to be caused.
  • the distribution curve of oxygen of the gas barrier layer has at least three extrema, it is preferable that, between one extremum the distribution curve of oxygen has and extrema neighboring the extremum, all of the differences in each of the distances from the surface of the gas barrier layer in the thickness direction of the gas barrier layer are 200 nm or less, and is more preferable that all of the differences are 100 nm or less.
  • Distribution curve of oxygen difference between the maximum value and the minimum value
  • the difference between the maximum value and the minimum value of the atomic ratio of the oxygen in the distribution curve of oxygen of the gas barrier layer is 5 at% or more, it is more preferable that the difference is 6 at% or more, and it is further more preferable that the difference is 7 at% or more.
  • the upper limit of the difference is not particularly limited, but it is usually approximately 30 at%.
  • the difference between the maximum value and the minimum value of the atomic ratio of silicon in the distribution curve of silicon of the gas barrier layer is preferably less than 5 at%, is more preferable that the difference is less than 4 at%, and is further more preferable that the difference is less than 3 at%.
  • the gas barrier characteristics of the second film tend to be particularly high.
  • Distribution curve of oxygen-carbon difference between the maximum value and the minimum value
  • the difference between the maximum value and the minimum value of the total of atomic ratios of oxygen and carbon is less than 5 at%, is more preferable that the difference is less than 4 at%, and is furthermore preferable that the difference is less than 3 at%.
  • the gas barrier characteristics of the second film tend to be particularly high.
  • XPS depth profile measurement in which surface composition analysis is sequentially performed while the inside of a sample is exposed by the use of both the measurement of X-ray photoelectron spectroscopy (XPS) and ion sputtering of rare gas such as argon. It is possible to create the distribution curve obtained by such XPS depth profile measurement, for example, by designating the ordinate as the atomic ratio (unit: at%) of each element and the abscissa as etching time (sputtering time). The etching time generally is correlated to the distance from the surface of the gas barrier layer in the thickness direction of the gas barrier layer.
  • the distance form the surface of the gas barrier layer calculated from the relationship between the etching speed adopted in the XPS depth profile measurement and etching time as "the distance from one surface of the gas barrier layer in the thickness direction of the gas barrier layer.”
  • the sputtering method adopted at the time of the XPS depth profile measurement it is preferable to adopt a rare gas ion sputtering method using argon (Ar + ) as etching ion species and to set the etching speed (etching rate) thereof to be 0.05 nm/sec (in terms of a SiO 2 thermally-oxidized film).
  • the gas barrier layer is substantially uniform in the film plane direction (in the direction parallel to the main face (surface) of the gas barrier layer).
  • the distribution curve of carbon is substantially continuous.
  • “the distribution curve of carbon is substantially continuous” means that the curve does not include a part in which the atomic ratio of the carbon in the distribution curve of carbon changes discontinuously. Specifically, this denotes that, in the relationship between the distance (x, unit: nm) from the surface of the layer in the thickness direction of the gas barrier layer calculated from an etching speed and etching time and the atomic ratio of the carbon (c, unit: at%), the condition represented by the following formula (F1): - 1.0 ⁇ dc / dx ⁇ 1.0 is met.
  • the second film according to the present embodiment includes at least one gas barrier layer that meets all the above conditions (i) to (iii), and the second film may include the gas barrier layers that meet all the above conditions (i) to (iii) in two or more layers.
  • the material quality of plural gas barrier layers may be the same or different from each other.
  • these gas barrier layers may be formed on one surface of the base material, or each may be formed on both surfaces of the base material.
  • the second film may include a thin film layer not necessarily having gas barrier characteristics.
  • the atomic ratio of the content of the silicon atoms relative to the total amount of the silicon atoms, oxygen atoms and carbon atoms in the gas barrier layer is 25 to 45 at%, is more preferable that the ratio is 30 to 40 at%. It is preferable that the atomic ratio of the content of the oxygen atoms relative to the total amount of the silicon atoms, oxygen atoms and carbon atoms in the gas barrier layer is 33 to 67 at%, and is more preferable that the ratio is 45 to 67 at%.
  • the atomic ratio of the content of the carbon atoms relative to the total amount of the silicon atoms, oxygen atoms and carbon atoms in the gas barrier layer is 3 to 33 at%, and is more preferable that the ratio is 3 to 25 at%.
  • the atomic ratio of the content of the silicon atoms relative to the total amount of the silicon atoms, oxygen atoms and carbon atoms in the gas barrier layer is 25 to 45 at%, and is more preferable that the ratio is 30 to 40 at%. It is preferable that the atomic ratio of the content of the oxygen atoms relative to the total amount of the silicon atoms, oxygen atoms and carbon atoms in the gas barrier layer is 1 to 33 at%, and is more preferable that the ratio is 10 to 27 at%.
  • the atomic ratio of the content of the carbon atoms relative to the total amount of the silicon atoms, oxygen atoms and carbon atoms in the gas barrier layer is 33 to 66 at%, and is more preferable that the ratio is 40 to 57 at%.
  • the thickness of the gas barrier layer is 5 to 3000 nm, is more preferable that the thickness is 10 to 2000 nm, and is particularly preferable that the thickness is 100 to 1000 nm.
  • the thickness of the gas barrier layer is in the range of these numerical values, more excellent gas barrier characteristics such as oxygen gas barrier characteristics and moisture barrier characteristics tend to be obtained, and the lowering of gas barrier characteristics by bending tends to be further effectively suppressed.
  • the total value of the thicknesses of the gas barrier layers is usually 10 to 10000 nm, and it is preferable that the value is 10 to 5000 nm, is more preferable that the value is 100 to 3000 nm, and is further more preferable that the value is 200 to 2000 nm.
  • the total value of the thicknesses of the gas barrier layers is in the range of these numerical values, there is a tendency that more excellent gas barrier characteristics such as oxygen gas barrier characteristics and moisture barrier characteristics is obtained, and the lowering of gas barrier characteristics by bending is further more effectively suppressed.
  • the second film may include further, in addition to the base material and the gas barrier layer of the second film, if necessary, a primer coat layer, a heat-sealing resin layer, an adhesive layer etc. It is possible to form the primer coat layer by using a primer coating agent capable of enhancing the adhesiveness to the base material and the gas barrier layer. It is possible to form the heat-sealing resin layer by using appropriately a known heat-sealing resin. It is possible to form the adhesive layer using appropriately an ordinary adhesive, and plural second films may adhere to each other by the adhesive layer.
  • the gas barrier layer of the second film is a layer formed by a plasma chemical vapor deposition method. It is more preferable that the gas barrier layer formed by a plasma chemical vapor deposition method is a layer formed by a plasma chemical vapor deposition method of disposing the base material of the second film on a pair of deposition rolls and discharging between the pair of deposition rolls to generate plasma. When discharging between the pair of deposition rolls, it is preferable to reverse alternately polarities of the pair of deposition rolls. It is preferable that a deposition gas used for the plasma chemical vapor deposition method contains an organosilicon compound and oxygen.
  • the content of oxygen in the deposition gas is a theoretical oxygen amount necessary for oxidizing completely the whole amount of the organosilicon compound in the deposition gas or less. It is preferable that the gas barrier layer of the second film is a layer formed by a continuous deposition process. Details of the method for forming the gas barrier layer by utilizing the plasma chemical vapor deposition method will be explained in a method for manufacturing the second film described later.
  • the second film It is possible to manufacture the second film by forming the gas barrier layer on the surface of the base material of the second film.
  • a method for forming the gas barrier layer on the surface of the base material of the second film from the viewpoint of gas barrier characteristics, plasma chemical vapor deposition method (plasma CVD) is preferable.
  • the plasma chemical vapor deposition method may be plasma chemical vapor deposition method of a Penning discharge plasma system.
  • the gas barrier layer on the surface of the base material of the second film. by a roll-to-roll system.
  • an apparatus that can be used when manufacturing the second film by the plasma chemical vapor deposition method is not particularly limited, it is preferable that the apparatus is one that includes at least a pair of deposition rolls and a plasma power source, and can discharge between the pair of deposition rolls.
  • the apparatus is one that includes at least a pair of deposition rolls and a plasma power source, and can discharge between the pair of deposition rolls.
  • a manufacturing apparatus shown in Fig. 4 it may be possible to manufacture the second film by a roll-to-roll system while utilizing a plasma chemical vapor deposition method.
  • FIG. 4 is a schematic view showing an example of a manufacturing apparatus capable of being preferably utilized for manufacturing the second film according to the present embodiment.
  • the same reference sign is given to the same or corresponding elements, and the overlapping description is appropriately omitted.
  • the manufacturing apparatus shown in Fig. 4 includes a feeding roll 701, conveying rolls 21, 22, 23 and 24, a pair of deposition rolls 31 and 32 disposed facing each other, a gas supply pipe 41, a power source 51 for generating plasma, magnetic field-generating devices 61 and 62 placed inside the deposition rolls 31 and 32, and a winding roll 702.
  • a vacuum chamber which is not shown.
  • the vacuum chamber is connected to a vacuum pump, which is not shown, and, with the vacuum pump, it may be possible to adjust appropriately the pressure in the vacuum chamber.
  • each of deposition rolls are connected respectively to the power source 51 for generating plasma.
  • the power source 51 for generating plasma By supplying electric power from the power source 51 for generating plasma, it is possible to discharge in the space between the deposition roll 31 and the deposition roll 32 and to thereby generate plasma in the space between the deposition roll 31 and the deposition roll 32.
  • the deposition roll 31 and the deposition roll 32 also as electrodes, it is sufficient to change appropriately the material and design so that they are utilizable as electrodes.
  • the pair of deposition rolls are disposed so that central axes thereof become substantially parallel on the same plane.
  • the manufacturing apparatus like this, it is possible to form the gas barrier layer on the surface of the base material 6 by a CVD method, and it is also possible, while accumulating film components on the surface of the base material 6 on the deposition roll 31, to further accumulate film components on the surface of the base material 6 also on the deposition roll 32. Consequently, it is possible to form effectively the gas barrier layer on the surface of the base material 6.
  • the magnetic field-generating devices 61 and 62 are provided inside the deposition roll 31 and the deposition roll 32.
  • the magnetic field-generating devices 61 and 62 are fixed so as not to rotate themselves even if the deposition rolls rotate.
  • the deposition roll 31 and the deposition roll 32 it is possible, as the deposition roll 31 and the deposition roll 32, to use appropriately an ordinary roll. It is preferable that diameters of the deposition rolls 31 and 32 are, from the viewpoint of forming more effectively a thin film, substantially the same. It is preferable that the diameters of the deposition rolls 31 and 32 are 5 to 100 cm, from the viewpoint of discharge conditions, space of chamber and the like.
  • the base materials 6 are disposed.
  • the base material 6 By disposing the base material 6 in this manner, it is possible, when discharging between the deposition roll 31 and the deposition roll 32 to generate plasma, to perform deposition simultaneously for each surface of the base materials 6 existing between the pair of deposition rolls. That is, according to such manufacturing apparatus, it is possible, by a CVD method, to accumulate film components on the surface of the base material 6 on the deposition roll 31, and, furthermore, to accumulate film components on the deposition roll 32. Consequently, it is possible to form effectively the gas barrier layer on the surface of the base material 6.
  • the feeding roll 701 and conveying rolls 21, 22, 23 and 24 it is possible to use, appropriately, an ordinary roll.
  • the winding roll 702 is not particularly limited, as long as it is one capable of winding the base material 6 with the gas barrier layer formed, and is appropriately selected from rolls usually used.
  • the gas supply pipe 41 is sufficient when supply or discharge of a raw material gas and the like at a prescribed speed is possible.
  • the power source 51 for generating plasma it is possible to appropriately use a power source of an ordinary plasma-generating apparatus.
  • the power source 51 for generating plasma supplies electric powers to the deposition roll 31 and the deposition roll 32 connected thereto, and makes it possible to utilize these as counter electrodes for discharge.
  • the power source 51 for generating plasma since it is possible to perform plasma CVD more effectively, it is preferable to utilize a power source (alternator etc.) that can reverse alternately polarities of a pair of deposition rolls.
  • the power source 51 for generating plasma can set an applied electric power to 100 W to 10 kW and a frequency of alternate current to 50 Hz to 500 kHz, in order to perform more effectively the plasma CVD.
  • the magnetic field-generating devices 61 and 62 it is possible to use, appropriately, an ordinary magnetic field-generating device.
  • the base material 6 it is possible to use, in addition to the base material of the second film, a film having a gas barrier layer previously formed. By using a film having a gas barrier layer previously formed as the base material 6, as described above, it is possible to make the thickness of the gas barrier layer thick.
  • the manufacturing apparatus shown in Fig. 4 it is possible to manufacture the second film, by using the manufacturing apparatus shown in Fig. 4 and appropriately adjusting, for example, the kind of a raw material gas, the electric power of a electrode drum of the plasma-generating device, the pressure in the vacuum chamber, the diameter of the deposition roll and conveying velocity of the film.
  • the deposition gas (raw material gas etc.) is decomposed by plasma, and, on the surface of the base material 6 on the deposition roll 31 and on the surface of the base material 6 on the deposition roll 32, gas barrier layer is formed by a plasma CVD method.
  • the gas barrier layer is formed on the surface of the base material 6, by a continuous deposition process of a roll-to-roll system.
  • the raw material gas in the deposition gas used for the formation of the gas barrier layer is appropriately selected in accordance with the material quality of the gas barrier layer to be formed.
  • the raw material gas it is possible to use, for example, an organosilicon compound containing silicon.
  • the raw material gas may contain, in addition to the organosilicon compound, monosilane being a silicon source.
  • the raw material gas contains at least one kind of organosilicon compound selected from a group consisting of, for example, hexamethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, vinyltrimethylsilane, methyltrimethylsilane, hexamethyldisilane, methylsilane, dimethylsilane, trimethylsilane, diethylsilane, propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, and octamethylcyclotetrasiloxane.
  • organosilicon compound selected from a group consisting of, for example, hexamethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, vinyltrimethylsilane,
  • organosilicon compounds from the viewpoint of characteristics such as handling property of the compound and gas barrier characteristics of the gas barrier layer to be obtained, hexamethyldisiloxane and 1,1,3,3-tetramethyldisiloxane are preferable. It is possible to use these organosilicon compounds in one kind alone or in a combination of two or more kinds.
  • the deposition gas may contain, in addition to the raw material gas, a reaction gas.
  • a reaction gas it is possible to appropriately select and use a gas reacting with the raw material gas, to form an inorganic compound such as an oxide, a nitride or the like.
  • the reaction gas for forming an oxide it is possible to use, for example, oxygen or ozone.
  • the reaction gas for forming a nitride it is possible to use, for example, nitrogen or ammonia.
  • These reaction gases are used in one kind alone or in a combination of two or more kinds. For example, in the case of forming an oxynitride, it is possible to combine a reaction gas for forming an oxide and a reaction gas for forming a nitride.
  • a carrier gas may be used as necessary.
  • a gas for discharge may be used as necessary.
  • the carrier gas and the gas for discharge it is possible to use appropriately known one. It is possible to use, for example, a rare gas such as helium, argon, neon and xenon, or hydrogen as a carrier gas or a gas for discharge.
  • the ratio of the reaction gas is not too excessive compared with the ratio of the reaction gas that becomes necessary theoretically for reacting completely the raw material gas and the reaction gas.
  • the ratio of the reaction gas it is possible to form particularly effectively the thin film (gas barrier layer) that meets all the above conditions (i) to (iii).
  • the oxygen amount of the deposition gas is the theoretical oxygen amount necessary for oxidizing completely the whole amount of the organosilicon compound in the deposition gas, or less.
  • hexamethyldisiloxane being the raw material and oxygen being the reaction gas are supplied to a deposition region from a gas supply part and deposited, and thus, even if the molar amount (flow amount) of oxygen being the reaction gas is a molar amount (flow amount) that is twelve times the molar amount (flow amount) of hexamethyldisiloxane being the raw material, it is considered that, actually, the reaction does not proceed completely and that there are many cases where the reaction finishes only after supplying oxygen much excessively as compared with the stoichiometric ratio.
  • the molar amount (flow amount) of oxygen is set to not less than approximately 20 times the molar amount (flow amount) of hexamethyldisiloxane being the raw material. Therefore, it is preferable that the the molar amount (flow amount) of oxygen relative to the molar amount (flow amount) of hexamethyldisiloxane being the raw material is an amount of 12 times the amount being the stoichiometric ratio or less (more preferably 10 times or less).
  • the deposition gas By causing the deposition gas to contain hexamethyldisiloxane and oxygen at the ratio, carbon atoms and hydrogen atoms in hexamethyldisiloxane having not completely been oxidized are taken in the gas barrier layer. As the result, it is possible to form the gas barrier layer that meets all the above conditions (i) to (iii). Consequently, it becomes possible to cause the second film to be obtained to exert excellent barrier characteristics and flex resistance.
  • the molar amount (flow amount) of oxygen relative to the molar amount (flow amount) of hexamethyldisiloxane in the deposition gas is too small, carbon atoms and hydrogen atoms having been not oxidized are excessively taken in the gas barrier layer.
  • the transparency of the gas barrier layer lowers, and, therefore, it becomes difficult to utilize the gas barrier layer as a flexible substrate for a device that requires transparency such as an organic EL device and an organic thin film solar cell.
  • the molar amount (flow amount) of oxygen relative to the molar amount (flow amount) of hexamethyldisiloxane in the deposition gas is an amount greater than 0.1 time the molar amount (flow amount) of hexamethyldisiloxane, and it is more preferable that it is an amount greater than 0.5 times.
  • the pressure is in the range of 0.1 Pa to 50Pa.
  • the electric power to be applied to an electrode drum (in the embodiment, placed in the deposition rolls 31 and 32) connected to the power source 51 for generating plasma is appropriately adjusted in accordance with the kind of the raw material gas and pressure in the vacuum chamber and the like, and is preferably 0.1 to 10 kW.
  • the applied electric power is less than the lower limit, particles tend to be easily caused, and when the applied electric power exceeds the upper limit, an amount of heat arising at the time of deposition increases and the temperature of the base material surface in the deposition rises.
  • the temperature rises too high there is a possibility that the base material suffers damage by heat and wrinkles arise at the time of deposition.
  • the conveying speed (line speed) of the base material 6 is 0.1 to 100 m/min, and is more preferable that the speed is 0.5 to 20 m/min.
  • the line speed is less than the lower limit, wrinkles caused by heat tend to occur easily in the film, and when the line speed exceeds the upper limit, the thickness of the gas barrier layer to be formed tends to become small.
  • the first film has, in the same manner as the second film, the second gas barrier layer.
  • the second gas barrier layer contains silicon atoms, oxygen atoms and carbon atoms, and the distribution curve of silicon, the distribution curve of oxygen and the distribution curve of carbon of the second gas barrier layer meet the above-mentioned conditions (i) to (iii). It is possible to form the second gas barrier layer in the same manner as the gas barrier layer in the above-mentioned second film.
  • the second gas barrier layer may have completely the same configuration as the gas barrier layer of the second film, but as long as the distribution curve of oxygen and the distribution curve of carbon meet the conditions (i) to (iii), the second gas barrier layer may have a configuration different from the gas barrier layer of the second film.
  • the organic EL element is formed on the first film or the second film, before the first film and the second film are bonded together.
  • the organic EL element is constituted by a pair of electrodes composed of an anode and a cathode, and a light-emitting layer provided between the electrodes. Between the pair of electrodes, in addition to the light-emitting layer, a prescribed layer is occasionally provided if necessary.
  • the light-emitting layer is not limited to one layer but is occasionally provided in plural layers.
  • Layers provided between the cathode and the light-emitting layer include an electron injection layer, an electron transport layer, a hole block layer and the like.
  • the layer in contact with the cathode denotes the electron injection layer
  • a layer excluding the electron injection layer denotes the electron transport layer.
  • the electron injection layer has a function of improving the electron injection efficiency from the cathode.
  • the electron transport layer has a function of improving the electron injection from a layer in contact with the surface on the cathode side.
  • the hole block layer has a function of interrupting the transport of holes. In the case where the electron injection layer and/or the electron transport layer have/has a function of interrupting the transport of holes, these layers occasionally serve also as the hole block layer.
  • the hole block layer has a function of interrupting the transport of holes, for example, by fabricating an element that allows only a hole current to flow and on the basis of the decrease in the current value thereof.
  • Layers to be provided between the anode and the light-emitting layer include a hole injection layer, a hole transport layer and an electron block layer etc.
  • the layer in contact with the anode is denoted as the hole injection layer
  • the layer excluding the hole injection layer is denoted as the hole transport layer.
  • the hole injection layer has a function of improving the hole injection efficiency from the anode.
  • the hole transport layer has a function of improving hole injection from the layer in contact with the surface on the anode side.
  • the electron block layer has a function of interrupting the transport of electrons. In the case where the hole injection layer and/or the hole transport layer have/has a function of interrupting the transport of electrons, these layers occasionally serve also as the electron block layer.
  • the electron block layer has the function of interrupting the transport of electrons, for example, by fabricating an element that allows only an electron current to flow and on the basis of the decrease in a current value thereof.
  • the electron injection layer and the hole injection layer are sometimes, collectively, denoted as a charge injection layer, and the electron transport layer and the hole transport layer are sometimes, collectively, denoted as a charge transport layer.
  • the organic EL element of the present embodiment may have two or more light-emitting layers.
  • the configuration of an organic EL element having two light-emitting layers includes a layer configuration shown in the following q).
  • Layer configurations existing in two (construction units A) may be the same or different from each other. q) anode/ (construction unit A)/ charge generation layer/ (construction unit A)/ cathode
  • the configuration of an organic EL element having a light-emitting layer of three or more layers includes a layer configuration shown in the following r).
  • r anode / construction unit B ⁇ x / construction unit A / cathode
  • the sign "x" shows an integer of 2 or more
  • (construction unit B) x shows a stacked body composed of construction units B stacked in x stages.
  • Layer configurations of a plurality of (construction units B) may be the same or different.
  • the charge generation layer is a layer that generates holes and electrons by applying an electric field.
  • Examples of the charge generation layer include thin films containing vanadium oxide, indium tin oxide (abbreviated name: ITO), molybdenum and the like.
  • an electrode exhibiting optical transparency is used as the anode.
  • the electrode exhibiting optical transparency it is possible to use a thin film of a metal oxide, a metal sulfide, a metal and the like, and an electrode having a high electroconductivity and light transmittance is preferable.
  • a thin film containing indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (abbreviated expression: IZO), gold, platinum, silver, copper and the like is used.
  • a thin film composed of ITO, IZO or tin oxide is preferable.
  • Methods for fabricating the anode include a vacuum evaporation method, a sputtering method, an ion plating method, a plating method and the like.
  • an organic transparent electroconductive film such as polyaniline or derivatives thereof, and polythiophene or derivatives thereof is also possible.
  • the thickness of the anode is appropriately set in consideration of characteristics to be required and ease of the process, and is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, further more preferably 50 nm to 500 nm.
  • Hole injection materials constituting the hole injection layer include oxides such as vanadium oxide, molybdenum oxide, ruthenium oxide and aluminum oxide; phenylamine-based compounds; starburst type amine-based compounds; phthalocyanine-based compounds; amorphous carbon; polyaniline; thiophene derivatives and the like.
  • Examples of the methods for depositing the hole injection layer include deposition from a solution containing a hole injection material.
  • Solvents to be used for the deposition from a solution are not particularly limited as long as they dissolve the hole injection material, and include chlorine-based solvents such as chloroform, methylene chloride and dichloroethane; ether-based solvents such as tetrahydrofuran; aromatic hydrocarbon-based solvents such as toluene and xylene; ketone-based solvents such as acetone and methyl ethyl ketone; ester-based solvents such as ethyl acetate, butyl acetate and ethyl cellosolve acetate; and water.
  • chlorine-based solvents such as chloroform, methylene chloride and dichloroethane
  • ether-based solvents such as tetrahydrofuran
  • aromatic hydrocarbon-based solvents such as toluene and xylene
  • ketone-based solvents such as acetone and methyl ethyl ketone
  • ester-based solvents such as
  • Coating methods include a spin coat method, a casting method, a micro gravure coat method, a gravure coat method, a bar coat method, a roll coat method, a wire bar coat method, a dip coat method, a spray coat method, a screen printing method, a flexographic printing method, an offset printing method, an ink jet printing method and the like.
  • the thickness of the hole injection layer is appropriately set in consideration of characteristics to be required and ease of the process, and is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, further more preferably 5 nm to 200 nm.
  • Hole transport materials constituting the hole transport layer include polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having an aromatic amine on a side chain or main chain, pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives, polyaniline or derivatives thereof, polythiophene or derivatives thereof, polyarylamine or derivatives thereof, polypyrrole or derivatives thereof, poly(p-phenylene vinylene) or derivatives thereof, poly(2,5-thienylene vinylene) or derivatives thereof and the like.
  • polymer hole transport materials such as polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, polysiloxane derivatives having an aromatic amine compound group on the side chain or main chain, polyaniline or derivatives thereof, polythiophene or derivatives thereof, polyarylamine or derivatives thereof, poly(p-phenylene vinylene) or derivatives thereof, poly(2,5-thienylene vinylene) or derivatives thereof and the like are preferable.
  • Further preferable hole transport materials are polyvinyl carbazole or derivatives thereof, polysilane or derivatives thereof, and polysiloxane derivatives having an aromatic amine on a side chain or main chain.
  • a low-molecular hole transport material is preferably used after dispersing it in a polymer binder.
  • Methods for depositing the hole transport layer are not particularly limited, and include, for a low-molecular hole transport material, deposition from a mixed liquid containing a polymer binder and a hole transport material, and include, for a high-molecular hole transport material, deposition from a solution containing a hole transport material.
  • Solvents to be used for the deposition from a solution are not particularly limited as long as they dissolve the hole transport material, and include chlorine-based solvents such as chloroform, methylene chloride and dichloroethane; ether-based solvents such as tetrahydrofuran; aromatic hydrocarbon-based solvents such as toluene and xylene; ketone-based solvents such as acetone and methyl ethyl ketone; ester-based solvents such as ethyl acetate, butyl acetate and ethyl cellosolve acetate and the like.
  • chlorine-based solvents such as chloroform, methylene chloride and dichloroethane
  • ether-based solvents such as tetrahydrofuran
  • aromatic hydrocarbon-based solvents such as toluene and xylene
  • ketone-based solvents such as acetone and methyl ethyl ketone
  • ester-based solvents such as
  • Deposition methods from a solvent include coating methods the same as aforementioned deposition methods of the hole injection layer.
  • a polymer binder combined with the hole transport material does not extremely inhibit the electron transport, and it is preferable that the absorption for visible light is weak.
  • the polymer binder is selected from, for example, polycarbonate, polyacrylate, polymethylacrylate, polymethylmethacrylate, polystyrene, polyvinyl chloride and polysiloxane.
  • the thickness of the hole transport layer differs in the optimal value depending on a material to be used, and is set appropriately so that a drive voltage and luminous efficiency become reasonable values. It is necessary that the hole transport film has a thickness at which a pinhole does not occur, and too much thickness leads to a high drive voltage of the element. Accordingly, the thickness of the hole transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, further more preferably 5 nm to 200 nm.
  • the light-emitting layer is formed, usually, mainly from an organic matter (light-emitting material) that emits fluorescence and/or phosphorescence, or from the organic matter and a dopant that assists this.
  • the dopant is added, for example, for improving the luminous efficiency, or for changing the luminous wavelength.
  • the organic matter contained in the light-emitting layer may be a low-molecular compound or a high-molecular compound. Generally, a high-molecular compound with a high solubility in a solvent rather than a low molecule is used favorably in a coating method, and thus it is preferable that the light-emitting layer contains a high-molecular compound.
  • the light-emitting layer contains a high-molecular compound with a number-average molecular weight of 10 3 to 10 8 in terms of polystyrene.
  • the light-emitting material constituting the light-emitting layer include the following dye-based material, a metal complex-based material, a polymer-based material, and a dopant material.
  • the dye-based material examples include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimer, pyrazoline dimer, quinacridone derivatives, and coumarin derivatives.
  • metal complex-based material examples include metal complexes having a central metal selected from rare earth metals such as Tb, Eu and Dy, and Al, Zn, Be, Ir, Pt and the like, and a ligand selected from oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, a quinolone structure and the like.
  • the metal complex-based material is selected from, for example, metal complexes having light-emission from a triplet excitation state such as an iridium complex and a platinum complex, an aluminum quinolinol complex, a benzoquinolinol beryllium complex, a benzoxazolyl zinc complex, a benzothiazole zinc complex, an azomethyl zinc complex, a porphyrin zinc complex, and a phenanthroline europium complex.
  • Polymer-based materials include poly(p-phenylenevinylene) derivatives, polythiophene derivatives, poly(p-phenylene) derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinyl carbazole derivatives, and materials in which the above dye-based material or metal complex-based light-emitting material have been made into a polymer, and the like.
  • materials emitting light in blue include distyrylarylene derivatives, oxadiazole derivatives and polymerized substances thereof, polyvinyl carbazole derivatives, poly(p-phenylene) derivatives, polyfluorene derivatives and the like.
  • distyrylarylene derivatives, oxadiazole derivatives and polymerized substances thereof polyvinyl carbazole derivatives, poly(p-phenylene) derivatives, polyfluorene derivatives and the like.
  • polyvinyl carbazole derivatives, poly(p-phenylene) derivatives, polyfluorene derivatives and the like being polymer materials are preferable.
  • Materials emitting light in green include quinacridone derivatives, coumarin derivatives and polymerized substances thereof, poly(p-phenylenevinylene) derivatives, polyfluorene derivatives and the like. Among them, poly(p-phenylenevinylene) derivatives, polyfluorene derivatives and the like being polymer materials are preferable.
  • Materials emitting light in red include coumarin derivatives, thiophene ring compounds and polymerized subtances thereof, poly(p-phenylenevinylene) derivatives, polythiophene derivatives, polyfluorene derivatives and the like. Among them, polymer poly(p-phenylenevinylene) derivatives, polythiophene derivatives, polyfluorene derivatives and the like being polymer materials are preferable.
  • Materials emitting light in white may be a mixture of the above materials emitting light in each color of blue, green or red, or may be a polymer material formed by mixing components (monomers) forming materials emitting light in respective colors and by polymerizing these. By stacking plural light-emitting layers formed by using each of materials emitting light in the respective colors, an element emitting light in white as a whole may be configured.
  • Examples of the dopant materials include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarium derivatives, porphyrin derivatives, a styryl-based dye, tetracene derivatives, pyrazolone derivatives, decacyclene and phenoxazone.
  • the thickness of the light-emitting layer is usually about 2 nm to 200 nm.
  • Solvents for use in the deposition from a solution include the same solvent as the aforementioned solvent to be used in depositing the hole injection layer from a solution.
  • Methods for coating a solution containing a light-emitting material include coating methods such as a spin coat method, a casting method, a micro gravure coat method, a gravure coat method, a bar coat method, a roll coat method, a wire bar coat method, a dip coat method, a slit coat method, a capillary coat method, a spray coat method and a nozzle coat method, and printing methods such as a gravure printing method, a screen printing method, a flexographic printing method, an offset printing method, an inverse printing method and an ink jet printing method.
  • printing methods such as a gravure printing method, a screen printing method, a flexographic printing method, an offset printing method, an inverse printing method, an ink jet printing method and the like are preferable.
  • a vacuum evaporation method it is possible to use a method of forming a light-emitting layer only in a desired part, by transfer by laser or thermal transfer.
  • the materials include oxadiazole derivatives, anthraquinodimethane or derivatives thereof, benzoquinone or derivatives thereof, naphthoquinone or derivatives thereof, anthraquinone or derivatives thereof, tetracyanoanthraquinodimethane or derivatives thereof, fluorenone derivatives, diphenyldicyano ethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof and the like.
  • oxadiazole derivatives benzoquinone or derivatives thereof, anthraquinone or derivatives thereof or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof and polyfluorene or derivatives thereof are preferable, and 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole, benzoquinone, anthraquinone, tris(8-quinolinol)aluminum, and polyquinoline are further preferable.
  • a method of depositing an electron transport layer is not particularly limited.
  • the method includes a vacuum evaporation method from powder, or deposition from a solution or a molten state, and, in the case of a polymer electron transport material, the method includes deposition from a solution or a molten state.
  • a polymer binder may be used together.
  • Methods for depositing the electron transport layer from a solution include the same deposition method as the above-mentioned method for depositing the hole injection layer from a solution.
  • the thickness of the electron transport layer is different in the optimal value depending on a material to be used, and is set appropriately so that a drive voltage and luminous efficiency become reasonable values. It is necessary that the electron transport layer has at least a thickness at which a pinhole does not occur, and having too much thickness leads to a high drive voltage of the element. Therefore, the thickness of the electron transport layer is, for example, 1 nm to 1 ⁇ m, preferably 2 nm to 500 nm, and further preferably 5 nm to 200 nm.
  • the optimal material is appropriately selected in accordance with the kind of the light-emitting layer.
  • Materials constituting the electron injection layer include an alkali metal; an alkali earth metal; an alloy containing one or more kinds of metals selected from an alkali metal and an alkali earth metal; an oxide, a halide, and a carbonate of an alkali metal or an alkali earth metal; mixtures of these materials, and the like.
  • Examples of the alkali metal; and the oxide, halide and carbonate of the alkali metal include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride, rubidium oxide, rubidium fluoride, cesium oxide, cesium fluoride, lithium carbonate, and the like.
  • Examples of the alkali earth metal; and the oxide, halide and carbonate of the alkali earth metal include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, barium fluoride, strontium oxide, strontium fluoride, magnesium carbonate, and the like.
  • the electron injection layer may be constituted by a stacked body in which two or more layers are stacked.
  • Examples of the stacked bodies of the electron injection layer include LiF/Ca.
  • the electron injection layer is formed by an evaporation method, a sputtering method, a printing method, or the like.
  • the thickness of the electron injection layer is preferably approximately 1 nm to 1 ⁇ m.
  • the material of the cathode As the material of the cathode, a material with a small work function, capable of electron injection easily into the light-emitting layer, and with a high electroconductivity is preferable. In the case of an organic EL element having a configuration taking out light from the anode side, in order to reflect light radiated from the light-emitting layer toward the anode side at the cathode, a material with a high visible light reflectance is preferable as the material of the cathode. As the material of the cathode, it is possible to use, for example, alkali metals, alkali earth metals, transition metals, and XIII group metals in the periodic table.
  • the material of the cathode there can be used, for example, metals such as lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium and an alloy containing two or more kinds of metals selected from these, an alloy of one or more kinds selected from the metals and one kind or more kinds selected from gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten and tin, or graphite or graphite intercalation compound.
  • metals such as lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium and an alloy containing
  • the alloys include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, calcium-aluminum alloy and the like.
  • a transparent electroconductive electrode composed of an electroconductive metal oxide, an electroconductive organic matter and the like can be used.
  • electroconductive metal oxides include indium oxide, zinc oxide, tin oxide, ITO and IZO
  • electroconductive organic matters include polyaniline or derivatives thereof, polythiophene or derivatives thereof, and the like.
  • the cathode may be constituted by a stacked body in which two or more layers are stacked. There is also a case where the electron injection layer is used as the cathode.
  • the thickness of the cathode is appropriately designed in consideration of required characteristics and ease of processes etc., and is, for example, 10 nm to 10 ⁇ m, preferably 20 nm to 1 ⁇ m, and further preferably 50 nm to 500 nm.
  • Methods for manufacturing the cathode include a vacuum evaporation method, a sputtering method, a laminate method in which thermocompression of a metal thin film is performed, and the like.
  • the above organic EL device can be used as an illuminating device, a surface light source device or a display device, by adding a prescribed constituent component.
  • the second film was manufactured. That is, by the use of a biaxially stretched polyethylenenaphthalate film (PEN film, thickness: 100 ⁇ m, width: 350 mm, manufactured by Teijin DuPont Films Limited, trade name "Teonex Q65FA" as a base material (base material 6), this was mounted on the feeding roll 701. Then, by the application of a magnetic field between the deposition roll 31 and the deposition roll 32, and by the supply of electric power to each of the deposition roll 31 and the deposition roll 32, discharge was performed and plasma was generated, between the deposition roll 31 and the deposition roll 32.
  • PEN film biaxially stretched polyethylenenaphthalate film
  • base material 6 base material 6
  • a deposition gas (a mixed gas of hexamethyldisiloxane (HMDSO) was supplied as a raw material gas and oxygen gas as a reaction gas (which functions also as a discharge gas)), thin film formation by a plasma CVD method was performed under the following conditions, and the second film having the gas barrier layer was obtained.
  • HMDSO hexamethyldisiloxane
  • Supplied amount of the raw material gas 50 sccm (0 degree, Standard Cubic Centimeter per Minute in terms of 1 atm.
  • Supplied amount of the oxygen gas 500 sccm Vacuum degree in the vacuum chamber: 3 Pa
  • Applied power from a power source for generating plasma 0.8 kW
  • Frequency of the power source for generating plasma 70 kHz
  • Conveying speed of a film 0.5 m/min
  • the thickness of the gas barrier layer in the obtained second film was 0.3 ⁇ m. Furthermore, the vapor transmittance of the obtained second film was 3.1 ⁇ 10 -4 g/(m 2 .day) under conditions of temperature 40°C, humidity on the lower humidity side 0% RH and humidity on the higher humidity side 90% RH, and was a value of detection limit or lower under conditions of temperature 40°C, humidity on the lower humidity side 10% RH and humidity on the higher humidity side 100% RH.
  • XPS depth profile measurement was performed under the following conditions, and the distribution curve of silicon, the distribution curve of oxygen, the distribution curve of carbon and the distribution curve of oxygen-carbon were obtained.
  • Etching ion species argon (Ar + )
  • Etching rate value in terms of thermally oxidized SiO 2 film
  • 0.05 nm/sec Etching spaces in terms of SiO 2
  • X-ray photoelectron spectrometer manufactured by Thermo Fisher Scientific K.K., model name "VG Theta Probe”
  • Irradiated X-rays single crystal dispersed AlK ⁇ Spot of X-rays and size thereof: ellipse of 800 ⁇ 400 ⁇ m
  • Each of the obtained distribution curve of silicon, distribution curve of oxygen and distribution curve of carbon is shown in Fig. 5 .
  • Regarding the obtained distribution curve of silicon, distribution curve of oxygen, distribution curve of carbon and distribution curve of oxygen-carbon, together with the relationship between the atomic ratio (atomic concentration) and etching time there is shown, on the graph in Fig. 6 , the relationship between the atomic ratio (atomic concentration) and the distance (nm) from the surface of the gas barrier layer.
  • the “distance (nm)" described on the abscissa of the graph in Fig. 6 is a value obtained by performing calculation from the etching time and etching speed.
  • the obtained distribution curve of carbon has plural distinct extrema, that the difference between the maximum value and the minimum value of the atomic ratio of carbon is 5 at% or more, and that, in 90% or more of regions in the thickness direction of the gas barrier layer, the atomic ratio of silicon, the atomic ratio of oxygen and the atomic ratio of carbon meet the condition shown by the above-mentioned formula (1).
  • the second film having the gas barrier layer of thickness 0.3 ⁇ m obtained in the reference example A1 was mounted on the feeding roll 701 as the base material 6, and a gas barrier layer on the surface of the gas barrier layer was newly formed. Except for this, in the same manner as in the reference example A1, a second film (A) was obtained.
  • the thickness of the gas barrier layer on the base material (PEN film) in the obtained second film (A) was 0.6 ⁇ m.
  • the obtained second film (A) was mounted on the feeding roll 701 as the base material 6, and a gas barrier layer on the surface of the gas barrier layer was newly formed. Except for this, in the same manner as that in the reference example A1, a second film (B) was obtained.
  • the thickness of the gas barrier layer in the obtained second film (B) was 0.9 ⁇ m.
  • the vapor transmittance of the obtained second film (B) was 6.9 ⁇ 10 -4 g/(m 2 .day) under conditions of temperature 40°C, humidity on the lower humidity side 0% RH and humidity on the higher humidity side 90% RH, and was a value of detection limit or lower under conditions of temperature 40°C, humidity on the lower humidity side 10% RH and humidity on the higher humidity side 100% RH.
  • the distribution curve of silicon, the distribution curve of oxygen, the distribution curve of carbon and the distribution curve of oxygen-carbon were created by the same method as the method in the reference example A1.
  • the obtained results are shown in Fig. 7 .
  • the obtained distribution curve of silicon, distribution curve of oxygen, distribution curve of carbon and distribution curve of oxygen-carbon together with the relationship between the atomic ratio (atomic concentration) and etching time, there is shown, on the graph in Fig. 8 , the relationship between the atomic ratio (atomic concentration) and the distance (nm) from the surface of the gas barrier layer.
  • the "distance (nm)" described on the abscissa of the graph in Fig. 8 is a value obtained by performing calculation from the etching time and etching speed.
  • the obtained distribution curve of carbon has plural distinct extrema, that the difference between the maximum value and the minimum value of the atomic ratio of carbon is 5 at% or more, and that, in 90% or more of regions in the thickness direction of the gas barrier layer, the atomic ratio of silicon, the atomic ratio of oxygen and the atomic ratio of carbon meet the condition shown by the above-mentioned formula (1).
  • the thickness of the gas barrier layer in the obtained second film was 0.6 ⁇ m.
  • the vapor transmittance of the obtained second film was 3.2 ⁇ 10 -4 g/(m 2 .day) under conditions of temperature 40°C, humidity on the lower humidity side 0% RH and humidity on the higher humidity side 90% RH, and was a value of detection limit or lower under conditions of temperature 40°C, humidity on the lower humidity side 10% RH and humidity on the higher humidity side 100% RH.
  • the distribution curve of silicon, the distribution curve of oxygen, the distribution curve of carbon and the distribution curve of oxygen-carbon were created in the same method as the method in the reference example A1.
  • the obtained distribution curve of silicon, distribution curve of oxygen and distribution curve of carbon are shown in Fig. 9 .
  • Regarding the obtained distribution curve of silicon, distribution curve of oxygen, distribution curve of carbon and distribution curve of oxygen-carbon, together with the relationship between the atomic ratio (atomic concentration) and etching time there is shown, on the graph in Fig. 10 , the relationship between the atomic ratio (atomic concentration) and the distance (nm) from the surface of the gas barrier layer.
  • the "distance (nm)" described on the abscissa of the graph in Fig. 10 is a value obtained by performing calculation from the etching time and etching speed.
  • the obtained distribution curve of carbon has plural distinct extrema, that the difference between the maximum value and the minimum value of the atomic ratio of carbon is 5 at% or more, and that, in 90% or more of regions in the thickness direction of the gas barrier layer, the atomic ratio of silicon, the atomic ratio of oxygen and the atomic ratio of carbon meet the condition shown by the above-mentioned formula (1).
  • PEN film thickness: 100 ⁇ m, width: 350 mm, manufactured by Teijin DuPont Films Limited, trade name "Teonex Q65FA"
  • Teonex Q65FA Teijin DuPont Films Limited
  • the thickness of the gas barrier layer in the obtained second film was 100 nm.
  • the vapor transmittance of the obtained second film was 1.3 g/(m 2 .day) under conditions of temperature 40°C, humidity on the lower humidity side 10% RH and humidity on the higher humidity side 100% RH, and the gas barrier characteristics thereof were insufficient.
  • the distribution curve of silicon, the distribution curve of oxygen, the distribution curve of carbon and the distribution curve of oxygen-carbon were created by the same method as the method in the reference example A1.
  • the obtained distribution curve of silicon, distribution curve of oxygen, distribution curve of carbon and distribution curve of oxygen-carbon are shown in Fig. 11 .
  • the obtained distribution curve of silicon, distribution curve of oxygen, distribution curve of carbon and distribution curve of oxygen-carbon together with the relationship between the atomic ratio (atomic concentration) and etching time, there is shown, on the graph in Fig. 12 , the relationship between the atomic ratio (atomic concentration) and the distance (nm) from the surface of the gas barrier layer.
  • the "distance (nm)" described on the abscissa of the graph in Fig. 12 is a value obtained by performing calculation from the etching time and etching speed. As is clear from results shown in Fig. 11 and Fig. 12 , it was confirmed that the obtained distribution curve of carbon does not have an extremum.
  • the film utilized in the organic EL element according to the present invention has sufficient gas barrier characteristics, and, in addition, even in the case of being subjected to bending, can suppress sufficiently the lowering of gas barrier characteristics.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
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WO2021023605A1 (fr) * 2019-08-08 2021-02-11 Plasmatreat Gmbh Procédé pour équiper un dispositif d'affichage électronique avec un dispositif de protection d'écran d'affichage

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WO2021023605A1 (fr) * 2019-08-08 2021-02-11 Plasmatreat Gmbh Procédé pour équiper un dispositif d'affichage électronique avec un dispositif de protection d'écran d'affichage

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