EP2421007B1 - Oxyde fritté conducteur, élément à thermistor l'incluant et capteur de température l'incluant - Google Patents

Oxyde fritté conducteur, élément à thermistor l'incluant et capteur de température l'incluant Download PDF

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Publication number
EP2421007B1
EP2421007B1 EP20110177815 EP11177815A EP2421007B1 EP 2421007 B1 EP2421007 B1 EP 2421007B1 EP 20110177815 EP20110177815 EP 20110177815 EP 11177815 A EP11177815 A EP 11177815A EP 2421007 B1 EP2421007 B1 EP 2421007B1
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Prior art keywords
crystal phase
conductive
insulating
sintered oxide
examples
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EP2421007A2 (fr
EP2421007A3 (fr
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Hiroshi Watanabe
Yasuyuki Okimura
Shinji Ban
Takeshi Mitsuoka
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Definitions

  • the present invention relates to a conductive sintered oxide which has electrically conductive properties and which changes in resistivity with a change in temperature.
  • the invention further relates to a thermistor element including the sintered oxide, and to a temperature sensor including the thermistor element.
  • thermosensor elements and temperature sensors include measurement of exhaust gas temperature from internal-combustion engines such as automobile engines.
  • temperature sensors are desired not only for temperature measurements in high-temperature regions, but also for detecting low temperatures so that a failure (breakage of wire) of the temperature sensor can be detected with, for example, OBD systems (on-board diagnostic systems) or the like.
  • Patent document 1 discloses, as a technique for satisfying this need, a conductive sintered oxide which has a temperature gradient constant (constant B) of about 2,000-3,000K.
  • thermoelectric elements vary, and there is a need for a thermistor element that has an even lower value of constant B, for example, a constant B of 2,000K or lower, which makes the thermistor element useful over a wider temperature range.
  • Such a thermistor element is suitably used for temperature measurements in the range of -40° to +600°C, for example, in exhaust gas temperature measurements such as the application described above.
  • detection of wire breakage in a lower-temperature region and detection of short-circuiting in a higher-temperature region can be precisely made based on the output of the temperature sensor (thermistor element).
  • thermoelectric element which has stable properties and does not change in resistance with the lapse of time even when exposed to high temperatures (e.g., +600°C).
  • An object of the invention which has been achieved to meet the above needs, is to provide a conductive sintered oxide allowing for temperature measurements over a wide temperature range and which exhibits a stable resistance even when exposed to high temperatures.
  • Another object of the invention is to provide a thermistor element including the conductive sintered oxide and a temperature sensor including the thermistor element.
  • a conductive sintered oxide which comprises a conductive crystal phase having a perovskite structure represented by (RE 1-c Sr c )M d O 3 , in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from Groups IVA, VA, VIA, VIIA and VIII, a first insulating crystal phase represented by RE 2 O 3 , in which RE is as defined above, and a second insulating crystal phase represented by SrAl 2 O 4 , wherein the conductive crystal phase has a coefficient c which satisfies 0.18 ⁇ c ⁇ 0.50, the conductive crystal phase has a coefficient d satisfying 0.67 ⁇ d ⁇ 0.93, the coefficient d indicating a ratio between the amount of the element group (RE 1-c Sr c ) constituting A sites and the amount of the element group M
  • the conductive sintered oxide described above contains the conductive crystal phase described above.
  • the coefficient c which indicates a ratio between the amounts of the element group RE and Sr in the A sites (RE 1-c Sr c ), is in the range of 0.18 ⁇ c ⁇ 0.50.
  • the coefficient c is c ⁇ 0.18, there are then cases where the conductive sintered oxide has an increased value of constant B which exceeds 2,000K.
  • the amount of Sr in the A sites is too large and the coefficient c is too large (c ⁇ 0.5)
  • a constant B of 2,000K or less can be attained while the conductive crystal phase retains the perovskite structure. This is because the coefficient c is in the range of 0.18 ⁇ c ⁇ 0.50.
  • the coefficient d which indicates a ratio between the amount of the element group constituting the A sites and the amount of the element group constituting the B sites, satisfies 0.67 ⁇ d ⁇ 0.93. Namely, the amount of the element group which constitutes the B sites is small (there is a deficiency) as compared with the element group constituting the A sites. In addition, the deficiency is somewhat large.
  • this conductive sintered oxide when continuously used in a high-temperature region, suffers a larger change in resistance R (e.g., R(600)) with the lapse of time. Specifically, when this conductive sintered oxide is allowed to stand for 400 hours in a high-temperature environment of +600°C (i.e., R(600)), the rate of resistance change ⁇ R becomes ⁇ R>1.0%.
  • the coefficient d is smaller than 0.67, the perovskite structure of this conductive sintered oxide is unstable and a change in crystal structure is apt to occur.
  • a variation in properties of the conductive sintered oxide can be inhibited while also inhibiting the conductive sintered oxide from changing in resistance R at high temperatures with the lapse of time.
  • a rate of resistance change ⁇ R of 1.0% or less can be attained.
  • the conductive sintered oxide contains a first insulating crystal phase represented by RE 2 O 3 and a second insulating crystal phase represented by SrAl 2 O 4 , and the content of a third insulating crystal phase represented by RE 4 Al 2 O 9 (the content of which may be zero) is smaller than the content of the first insulating crystal phase and is smaller than the content of the second insulating crystal phase.
  • the third insulating crystal phase is not present in the conductive sintered oxide or is present in a smaller amount than the first insulating crystal phase and in a smaller amount than the second insulating crystal phase.
  • the third insulating crystal phase contains RE and Al. Because of this, the third insulating crystal phase competes for Al with the conductive crystal phase, and the B sites of the conductive crystal phase are apt to be deprived of Al by the third insulating crystal phase when this sintered oxide is exposed to a high-temperature environment. It is thought that the conductive crystal phase, when deprived of Al and thereby changed in composition, also exhibits a change in resistance characteristics.
  • the third insulating crystal phase is not present or is present in a smaller amount than the first insulating crystal phase and in a smaller amount than the second insulating crystal phase, as stated above. Because of this, the conductive crystal phase is less apt to undergo a change in composition due to the presence of the third insulating crystal phase, and is less apt to undergo a change in resistance R (e.g., R(600)) with the lapse of time when continuously used in a high-temperature region.
  • R resistance
  • the conductive sintered oxide of the invention which has the properties described above, not only can be used for suitably measuring temperature over a wide range, but also exhibits a stable value of resistance even when exposed to high temperatures.
  • the element group RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA (Group 3 new IUPAC numbering) of the periodic table excluding Yb, Lu and La. Examples thereof include a combination of Yb and Y, a combination of Lu and Y, and a combination of Yb, Lu and Y.
  • the presence of the conductive crystal phase (crystal phase having a perovskite-type crystal structure) can be ascertained by an X-ray diffraction method based on the presence of peaks characteristic of crystals having the same crystal system and a similar composition, and the presence of the same elements as in that crystal phase.
  • the coefficient d is a coefficient which indicates the molar ratio between the element group (RE 1-c Sr c ) constituting the A sites and the element group M constituting the B sites in the empirical formula (RE 1-c Sr c )M d O 3 , as stated above.
  • the coefficient d is less than 1. This indicates that the conductive crystal phase is deficient in the B-site element group as compared with the A-site element group (the B-side element group is present in a smaller amount than the A-site element group). In this case also, the conductive crystal phase may have such properties so long as the perovskite-type crystal structure is maintained.
  • the coefficient c of the conductive crystal phase is preferably c ⁇ 0.20.
  • the constant B (-40 to 600°C) can be further reduced to 1,900K or below.
  • the coefficient c of the conductive crystal phase is c ⁇ 0.21.
  • the constant B (-40 to 600°C) can be further reduced to 1,800K or below.
  • the conductive sintered oxide is also preferably a conductive sintered oxide in which in a cross-section of the conductive sintered oxide, the ratio of the areal proportion of the third insulating crystal phase Si3 to the areal proportion of the conductive crystal phase Sc, Si3/Sc (%), satisfies Si3/Sc ⁇ 6.0 (%).
  • the conductive sintered oxide has a cross-section in which the ratio of the areal proportion of the third insulating crystal phase Si3 to the areal proportion of the conductive crystal phase Sc is adjusted so as to satisfy Si3/Sc ⁇ 6.0 (%).
  • a change in resistance R e.g., R(600)
  • the change in resistance R with the lapse of time can be further inhibited in a high-temperature region.
  • the rate of resistance change ⁇ R through 400-hour standing in a high-temperature environment of +600°C can be reduced to 1.0% or less.
  • the areal ratio Si3/Sc preferably satisfies Si3/Sc ⁇ 2.0 (%).
  • a change in resistance R of the conductive sintered oxide can especially be inhibited with the lapse of time in a high-temperature region.
  • the rate of resistance change ⁇ R after having been subjected to 400-hour standing in a high-temperature environment of +600°C can be reduced to 0.50% or less.
  • the conductive sintered oxide described above is desirably a conductive sintered oxide in which the coefficient d satisfies 0.67 ⁇ d ⁇ 0.90.
  • the coefficient d satisfies 0.67 ⁇ d ⁇ 0.90.
  • the change in resistance R of the conductive sintered oxide can be inhibited with the lapse of time in a high-temperature region.
  • the rate of resistance change ⁇ R after having been subjected to 400-hour standing in a high-temperature environment of +600°C can be reduced so as to satisfy ⁇ R ⁇ 0.50%.
  • the B-site element group M in the conductive crystal phase having a perovskite structure includes Al, Mn and Cr. Furthermore, the coefficients x, y and z, which are the molar proportions of these elements in the B sites, have been regulated so as to be within the respective numerical ranges shown above.
  • Elements Al, Mn and Cr, which occupy the B-sites, are akin to each other in ionic radius, and can be easily substituted by each other. Furthermore, by-products constituted of these elements are less apt to generate, and the conductive crystal phase which has a composition resulting from the substitution can stably exist. Because of this, by continuously changing the composition over a wide range, the resistivity and temperature gradient constant (constant B) of the conductive sintered oxide can be regulated.
  • the thermistor element of the invention includes any of the conductive sintered oxides described above.
  • the thermistor element includes the conductive sintered oxide described above, the thermistor element has a suitable temperature gradient constant (constant B) which renders temperature measurements possible over a wide range of, for example, -40 to +600°C.
  • the thermistor element suffers little change in resistance and shows a stable resistance value, even when exposed to high temperatures over a long period of time.
  • the temperature sensor of the invention includes the thermistor element.
  • the temperature sensor of the invention includes the thermistor element including the conductive sintered oxide described above, the temperature sensor can be used for temperature measurements over a wide range of, for example, -40 to +600°C.
  • the thermistor element suffers little change in resistance and shows a stable resistance value even when exposed to high temperatures over a long period of time, the temperature sensor has stable properties.
  • the temperature measurement can be precisely and stably made based on the output of the thermistor that is used.
  • wire breakage detection in a lower-temperature region and short-circuiting detection in a higher-temperature region also can each be precisely and stably made based on the output of the thermistor that is used.
  • the starting-material powder mixture was calcined at 1,400°C for 2 hours in the air to obtain a calcined powder having an average particle diameter of 1-2 ⁇ m.
  • a resin pot and high-purity alumina flint pebbles were used to conduct wet mixing/pulverization using ethanol as a dispersion medium.
  • Example 1 25.16 6.45 - 17.20 34.41 16.34 0.43
  • Example 2 25.58 6.42 - 17.11 34.22 16.25 0.43
  • Example 3 26.57 6.13 - 16.35 35.00 15.54 0.41
  • Example 4 24.32 6.24 - 16.63 36.59 15.80 0.42
  • Example 5 25.58 - 6.42 17.11 34.22 16.25 0.43
  • Example 6 26.75 6.17 - 16.46 34.57 15.64 0.41
  • Example 7 26.19 6.36 - 16.97 33.93 16.12 0.42
  • Example 8 25.15 6.31 - 18.50 33.64 15.98 0.42
  • Example 9 25.78 6.40 - 17.06 34.12 16.21 0.43
  • Example 10 26.49 6.11 - 16.30 35.21 15.48 0.41
  • Example 11 25.19 6.25 - 16.66 35.66 15.83 0.42
  • Example 12 25.58 3.21 3.21 17.11 34.22 16.25 0.43
  • the resultant slurry was dried at 80°C for 2 hours to obtain a synthesized thermistor powder.
  • 20 parts by weight of a binder including poly(vinyl butyral) as a main component was added to and mixed with 100 parts by weight of the synthesized thermistor powder.
  • the resultant mixture was dried, subsequently passed through a 250- ⁇ m mesh sieve, and granulated to obtain granules.
  • Useful binders are not limited to poly(vinyl butyral), and examples thereof include poly(vinyl alcohol) and acrylic binders.
  • the amount of the binder to be incorporated is generally 5-20 parts by weight, preferably 10-20 parts by weight, per 100 parts by weight of the calcined powder.
  • the synthesized thermistor powder Before being mixed with the binder, the synthesized thermistor powder is preferably regulated so as to have an average particle diameter of 2.0 ⁇ m or less. Thus, the ingredients can be evenly mixed.
  • Example 5 is the same as Example 2, except that Lu 2 O 3 was used in place of the Yb 2 O 3 used in Example 2.
  • Example 12 is the same as Example 2, except that Yb 2 O 3 and Lu 2 O 3 were used in the same molar amount in place of the Yb 2 O 3 used in Example 2.
  • Example 16 employed a composition which included no Cr 2 O 3 unlike the composition of Example 1, etc.
  • Comparative Examples 1 to 3 employed a larger Y 2 O 3 amount relative to the Al 2 O 3 amount than in the Examples, and thereby employed a larger amount of the element group RE.
  • Example 8 was examined, as a representative example, for X-ray diffraction. The results thereof are shown (see Fig. 1 ).
  • Fig. 1 the peaks indicated by circle symbols are peaks which agree with the diffraction peak data obtained when the crystal is assumed to be YAlO 3 . It can be seen that the peak arrangement which is characteristic of a perovskite structure has appeared. It can be ascertained from the results that a conductive crystal phase having a perovskite structure is present in the sintered oxide of Example 8.
  • peak data for YAlO 3 were used is as follows. It is presumed that Yb (or Lu) and Sr are contained in the A sites besides Y, and that Mn and Cr are contained in the B sites besides Al. However, these elements are present as a solid solution at the respective sites. It is therefore thought that so long as a conductive crystal phase of a perovskite structure is present, a pattern which is akin to the pattern of YAlO 3 is exhibited.
  • the crystal phases in particular, the perovskite-type conductive crystal phase, which is a conductive phase, were subjected to compositional analysis by EPMA/WDS (Electron Probe Microanalysis/Wavelength Dispersive Spectrometry) in the manner described below.
  • EPMA/WDS Electro Probe Microanalysis/Wavelength Dispersive Spectrometry
  • the element group RE includes Y and further includes Yb or Lu depending on the Examples, and the element group M includes Al and Mn and further includes Cr depending on the Examples.
  • an insulating crystal phase having the crystal structure of RE 2 O 3 (first insulating crystal phase) also can be ascertained.
  • this first insulating crystal phase also was assumed to be Yb 2 O 3 and examined for peaks which agreed with peak data for this crystal. The crystal structure was thus determined. Thereafter, it was ascertained by EPMA/WDS that Y was contained in this first insulating crystal phase besides Yb. With respect to the other Examples and the Comparative Examples, it was ascertained, in the same manner, that RE 2 O 3 was contained as a first insulating crystal phase (see Table 2). With respect to the sintered oxide of Example 5, however, the first insulating crystal phase was assumed to be Lu 2 O 3 in place of Yb 2 O 3 and examined for peaks which agreed with peak data for this crystal.
  • an insulating crystal phase having the crystal structure of RE 4 Al 2 O 9 (third insulating crystal phase) was also ascertained.
  • this third insulating crystal phase was assumed to be Y 4 Al 2 O 9 and examined for peaks which agreed with peak data for this crystal. The crystal structure was thus determined. Thereafter, it was ascertained by EPMA/WDS that Al was contained in the third insulating crystal phase besides Y and Yb, which are included in the element group RE. With respect to the other Examples, it was ascertained, in the same manner, that RE 4 Al 2 O 9 was contained as a third insulating crystal phase (see Table 2).
  • each conductive sintered oxide mainly included a conductive crystal phase and further contained the first insulating crystal phase and second insulating crystal phase described above. Some of the conductive sintered oxides still further contained a third insulating crystal phase.
  • the perovskite-type conductive crystal phase in each of the Examples and Comparative Examples has a composition represented by (RE 1-c SR c )M d O 3 , more specifically, a composition represented by (RE 1-c Sr c )(Al x Mn y Cr z )O 3 .
  • the coefficient c is a value which indicates the ratio between the amount of the element group RE and the amount of Sr in the A sites.
  • the coefficient d indicates the proportion of the elements belonging to the B sites to the elements belonging to the A sites. When the coefficient d is less than 1, this indicates that the amount of the elements belonging to the B sites is relatively small (there is a deficiency in these elements).
  • a backscattered electron image was taken by means of an SEM (see, for example, Fig. 2 , Fig. 4 , and Fig. 6 with respect to Examples 1 and 8 and Comparative Example 3).
  • the conductive crystal phase and the insulating crystal phases give a black-and-white contrast (dark areas and light areas) in the backscattered electron image (original image) depending on a difference in composition (difference in atomic number between the elements contained). Namely, the higher the content of a heavy element in an area, the whiter the image of the area.
  • the white small spots indicate the first insulating crystal phase having a composition represented by RE 2 O 3 .
  • the first insulating crystal phase contains Y, Yb and Lu, which are heavy elements, in a large amount.
  • the dark gray spots indicate the second insulating crystal phase having a composition represented by SrAl 2 O 4 .
  • this crystal phase contains none of Y, Yb and Lu, which are heavy elements, and is constituted of Sr and Al, which are relatively lightweight elements.
  • the relatively large white massive areas indicate the third insulating crystal phase having a composition represented by RE 4 Al 2 O 9 .
  • this crystal phase contains Y, Yb and Lu, which are heavy elements, in a large amount like the first insulating crystal phase.
  • the background in Fig. 4 which appears to be light gray, indicates the conductive crystal phase having a composition represented by (RE 1- c Sr c )(Al x Mn y Cr z )O 3 . This is because this crystal phase contains Y, Yb and Lu, which are heavy elements, but the proportion of these elements (element group RE) in the crystal phase is lower than in the first insulating crystal phase and the third insulating crystal phase.
  • the black spots indicate pores.
  • the first insulating crystal phase having a composition represented by RE 2 O 3 was extracted as shown in Fig. 3A , and the areal proportion Si1 thereof was determined. Furthermore, the second insulating crystal phase having a composition represented by SrAl 2 O 4 was extracted as shown in Fig. 3B , and the areal proportion Si2 thereof was determined.
  • the third insulating crystal phase having a composition represented by RE 4 Al 2 O 9 was not observed (an areal proportion Si3 of 0.0 is given in Table 2). The areal proportion of the remaining parts was taken as the areal proportion Sc of the conductive crystal phase having a composition represented by (RE 1-c Sr c )(Al x Mn y Cr z )O 3 .
  • the first insulating crystal phase was extracted as shown in Fig. 5A
  • the second insulating crystal phase was extracted as shown in Fig. 5B
  • the third insulating crystal phase was also extracted as shown in Fig. 5C .
  • the remaining parts were taken as the conductive crystal phase. From these extract images, the areal proportions of the respective phases Sc, Si1, Si2 and Si3 were obtained.
  • Example 8 the third insulating crystal phase having a composition represented by RE 4 Al 2 O 9 is present as described above.
  • the first insulating crystal phase, second insulating crystal phase, and third insulating crystal phase were extracted as shown in Fig. 7A, Fig. 7B and Fig. 7C , and the remaining parts were taken as the conductive crystal phase.
  • the areal proportions of the respective phases Sc, Si1, Si2 and Si3 were obtained.
  • Table 2 shows the areal proportions of the respective phases with respect to each of the Examples and Comparative Examples.
  • Table 2 further shows the ratio (Si3/Sc) of the areal proportion Si3 of the third insulating crystal phase having a composition represented by RE 4 Al 2 O 9 to the areal proportion Sc of the conductive crystal phase having a composition represented by (RE 1-c Sr c )(Al x Mn y Cr z )O 3 .
  • thermistor elements were produced in the following manner.
  • the compact was fired at 1,550°C for 4 hours in the air and then annealed (heat-treated) at 800°C for 24 hours in the air.
  • thermistor elements 2 of Examples 1 to 16 were produced.
  • Thermistor elements according to Comparative Examples 1 to 4 also were produced in the same manner.
  • the thermistor elements 2 each had a hexagonal shape with a side length of 1.15 mm and had a thickness of 1.00 mm.
  • the electrode wires 2a and 2b had a diameter of 0.3 mm, and the distance between the electrode centers was 0.74 mm (gap, 0.44 mm).
  • the electrode insertion depth was 1.10 mm.
  • the constant B (B(-40 to 600)) was calculated using the following equation (1).
  • B ⁇ - 40 to 600 ln ⁇ R 600 / R - 40 / 1 / T 600 - 1 / T - 40
  • R(-40) is the resistance (k ⁇ ) of the thermistor element at -40°C
  • R(600) is the resistance (k ⁇ ) of the thermistor element at +600°C.
  • each thermistor element 2 of Examples 1 to 16 and Comparative Examples 1 to 4 each were examined for a change in resistance R(600) after having been subjected to a high-temperature (specifically, +600°C) standing test, and the rate of resistance change ⁇ R (%) was calculated in the following manner.
  • this thermistor element 2 was allowed to stand in a +600°C environment for a period of 400 hours, and the resistance R1(600) of the thermistor element 2 in this state was measured thereafter.
  • the rate of resistance change ⁇ R was then calculated using the following equation (2).
  • ⁇ R R ⁇ 1 600 - R ⁇ 0 600 / R ⁇ 0 600 ⁇ 100
  • the conductive sintered oxides of Examples 1 to 16 each contained a conductive crystal phase having a perovskite structure represented by (RE 1-c Sr c )M d O 3 , in which RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA (Group 3 new IUPAC numbering) excluding Yb, Lu and La, and M is a group of elements consisting of Al and at least one element selected from the Groups IVA, VA, VIA, VIIA and VIII (Groups 4 to 10 new IUPAC numbering).
  • RE is a group of elements consisting of Yb and/or Lu and at least one element selected from Group IIIA (Group 3 new IUPAC numbering) excluding Yb, Lu and La
  • M is a group of elements consisting of Al and at least one element selected from the Groups IVA, VA, VIA, VIIA and VIII (Groups 4 to 10 new IUPAC numbering).
  • the element group RE specifically is a combination of Yb and Y, a combination of Lu and Y, or a combination of Yb, Lu and Y.
  • the element group M specifically is a combination of Al, Mn, and Cr or a combination of Al and Mn.
  • the coefficient c for the A sites of the conductive crystal phase is in the range of 0.18 ⁇ c ⁇ 0.50.
  • the sintered oxides of the Examples and Comparative Examples each exhibit a tendency that the larger the coefficient c, the smaller the constant B.
  • the coefficient c should be c>0.18 in order that the constant B (B(-40 to 600)) might satisfy B(-40 to 600) ⁇ 2000 (K).
  • the coefficient c should be c ⁇ 0.20 in order that the constant B (B(-40 to 600)) might satisfy B(-40 to 600) ⁇ 1900 (K).
  • the coefficient c should be c ⁇ 0.21 in order that the constant B (B(-40 to 600)) might satisfy B(-40 to 600) ⁇ 1800 (K).
  • the coefficient d for the B sites of the conductive crystal phase is in the range of 0.67 ⁇ d ⁇ 0.93.
  • Example 1 0.87 0.05
  • Example 2 0.88 0.14
  • Example 3 0.88 0.21
  • Example 4 0.74 -0.02
  • Example 5 0.89 0.16
  • Example 6 0.91 0.51
  • Example 7 0.90 0.60
  • Example 8 0.90 0.76
  • Example 9 0.89 0.32
  • Example 10 0.87 0.03
  • Example 11 0.81 0.01
  • Example 12 0.88 0.15
  • Example 13 0.91 0.91
  • Example 14 0.88 0.27
  • Example 15 0.86 0.18
  • Example 16 0.87 0.11 Comparative Example 1 0.94 1.49 Comparative Example 2 0.97 3.87 Comparative Example 3 0.95 1.82 Comparative Example 4 0.86 0.08
  • Table 2 shows that in each of the sintered oxides of the Examples, the areal proportion Si3 of the third insulating crystal phase is smaller than the areal proportion Si1 of the first insulating crystal phase and is smaller than the areal proportion Si2 of the second insulating crystal phase. Namely, Si3 ⁇ Si1 and Si3 ⁇ Si2.
  • the contents of the respective phases are equal to the areal proportions Si1, Si2, Si3 and Sc of the respective phases obtained from the original SEM image described above. Consequently, it can be considered that the content of the third insulating crystal phase (which may be 0) is smaller than the content of the first insulating crystal phase and is smaller than the content of the second insulating crystal phase.
  • Example 1 0.0 0.05
  • Example 2 0.0 0.14
  • Example 3 0.8 0.21
  • Example 4 0.0 -0.02
  • Example 5 0.0 0.16
  • Example 6 2.1 0.51
  • Example 7 3.0 0.60
  • Example 8 4.2 0.76
  • Example 9 1.2 0.32
  • Example 10 0.0 0.03
  • Example 11 0.0 0.01
  • Example 12 0.0 0.15
  • Example 13 5.6 0.91
  • Example 14 0.9 0.27
  • Example 15 0.0 0.18
  • Example 16 0.0 0.11 Comparative Example 1 14.9 1.49 Comparative Example 2 20.0 3.87 Comparative Example 3 16.6 1.82 Comparative Example 4 0.0 0.08
  • the element group M in the conductive crystal phase of each sintered oxide satisfies the following.
  • the conductive crystal phase is expressed by (RE 1-c Sr c )(Al x Mn y Cr z )O 3 , then the coefficients x, y and z respectively for Al, Mn and Cr are within the following ranges.
  • x+y+z d as stated above. 0.40 ⁇ x ⁇ 0.87 0.05 ⁇ y ⁇ 0.52 0 ⁇ z ⁇ 0.05
  • B(-40 to 600) 1,584 to 1,942K
  • these thermistor elements 2 have a rate of resistance change ⁇ R reduced to a small value within the range of ⁇ 1.0%. Even when these thermistor elements 2 are allowed to stand at a high temperature (+600°C) over a long period of time, the resistance R(600) thereof changes little. It can hence be seen that even when the thermistor elements 2 are exposed to a high temperature, a resistance value corresponding to the temperature can be stably obtained.
  • each of Comparative Examples 1 to 3 had a constant B (B(-40 to 600)) of 1,641 to 1,707K, which is equal to or smaller than the values obtained in the Examples.
  • the third insulating crystal phase was generated in a relatively large amount, and the ratio Si3/Sc of the areal proportion Si3 of the third insulating crystal phase to the areal proportion Sc of the conductive crystal phase reached 14.9-20.0%. It is thought that since the third insulating crystal phase, which is apt to deprive the conductive crystal phase of Al, was generated in a large amount within the sintered oxide, the conductive crystal phase was deprived of a large amount of Al, resulting in an increased rate of resistance change ⁇ R.
  • the thermistor elements in which the coefficient c for the conductive crystal phase satisfies the range shown above (0.18 ⁇ c ⁇ 0.50) have a value of constant B (B(-40 to 600)) as small as 2,000K or below.
  • the lower limit of the coefficient c for the conductive crystal phase more preferably is c ⁇ 0.21. This is because in this case, the constant B (-40 to 600°C) can be further reduced to 1,800K or below.
  • the thermistor elements in which the coefficient d satisfies 0.67 ⁇ d ⁇ 0.93 can have a rate of resistance change ⁇ R of ⁇ R ⁇ 1.0 (%) even when allowed to stand for 400 hours in an environment of +600°C.
  • the areal proportion Si3 of the third insulating crystal phase (the areal proportion corresponds to content, and may be 0) is smaller than the areal proportion Si1 (corresponding to content) of the first insulating crystal phase and is smaller than the areal proportion Si2 (corresponding to content) of the second insulating crystal phase.
  • the rate of resistance change ⁇ R can be regulated to ⁇ R ⁇ 1.0(%).
  • the first insulating crystal phase (RE 2 O 3 ) and the second insulating crystal phase (SrAl 2 O 4 ) are present not only in the Examples but also in each of Comparative Examples 1 to 4. It can hence be seen that the presence of these crystal phases is not especially peculiar to the sintered oxides according to the Examples.
  • a temperature sensor 100 employing a thermistor element 2 employs the thermistor element 2 as a thermosensitive element.
  • This temperature sensor 100 is attached to the mounting part of the exhaust pipe of a motor vehicle so that the thermistor element 2 is disposed within the exhaust pipe through which the exhaust gas flows. The temperature sensor 100 is thus used for measuring the temperature of the exhaust gas.
  • the temperature sensor 100 includes a metallic tube 3 which extends in the direction of the axis thereof (hereinafter referred to as axial direction).
  • the metallic tube 3 has the shape of a bottomed cylinder which is closed at the front end part 31 (lower end in Fig. 12 ).
  • the thermistor element 2 of the Examples is disposed in the front end part 31.
  • the metallic tube 3 undergoes a heat treatment beforehand, and the outer and inner side surfaces thereof are oxidized and coated with an oxide coating film.
  • the space which surrounds the thermistor element 2 in the metallic tube 3 is filled with a cement 10 to fix the thermistor element 2.
  • the rear end 32 of the metallic tube 3 is open, and this rear end 32 has been forced and inserted into a flange member 4.
  • the flange member 4 includes a cylindrical sheath part 42 extending in the axial direction and a flange part 41 which is located on the front end side of the sheath part 42 (lower part in Fig. 12 ), has a larger outer diameter than the sheath part 42, and projects outward in the radial direction.
  • the front end of the flange part 41 constitutes a tapered bearing surface 45 for sealing on the mounting part of an exhaust pipe.
  • the sheath part 42 has a two-stage shape composed of a front-side sheath part 44, which is located on the front side, and a rear-side sheath part 43, which has a smaller diameter than the front-side sheath part 44.
  • the outer peripheral surface of the metallic tube 3 forced into the flange member 4 is laser-welded at the part L1 to the rear-side sheath part 43 throughout the whole periphery, and the metallic tube 3 is thereby fixed tenaciously to the flange member 4.
  • a metallic cover member 6 of a substantially cylindrical shape is placed on the front-side sheath part 44 of the flange member 4 and gas-tightly laser-welded at the part L2 to the front-side sheath part 44 throughout the entire periphery thereof.
  • a mounting member 5 having a hexagon nut part 51 and a screw part 52 is rotatably fitted on the periphery of the flange member 4 and metallic cover member 6.
  • the temperature sensor 100 of the Examples is fixed to an exhaust pipe (not shown) by bringing the bearing surface 45 of the flange part 41 of the flange member 4 into contact with the mounting part of the exhaust pipe and screwing the nut 5 into the mounting part.
  • a sheath member 8 having a pair of core wires 7 therein is disposed within the metallic tube 3, flange member 4, and metallic cover member 6.
  • This sheath member 8 is configured of a metallic outer casing, the pair of conductive core wires 7, and an insulating powder which fills the space inside the outer casing and holds the core wires 7 while insulating the outer casing from the core wires 7.
  • An oxide coating film is formed beforehand by a heat treatment also on the outer casing of the sheath member 8.
  • the electrode wires 2a and 2b of the thermistor element 2 are connected by laser welding to the core wires 7 which project (downward in the figure) from the front end of the outer casing of the sheath member 8 in the metallic tube 3.
  • the core wires 7 projecting from the rear end of the sheath member 8 are connected to a pair of lead wires 12 by means of crimping terminals 11.
  • the core wires 7 are insulated from each other and the crimping terminals 11 are insulated from each other by means of insulating tubes 15.
  • the pair of lead wires 12 is led out from inside the metallic cover member 6 through lead wire insertion holes of an elastic sealing member 13 inserted into a rear end part of the metallic cover member 6, and is connected to the terminal members of a connector 21 for connection to an external circuit (not shown; for example, an ECU).
  • an external circuit not shown; for example, an ECU
  • the output from the thermistor element 2 is taken out of the core wires 7 of the sheath member 8 and sent to an external circuit, which is not shown, through the lead wires 12 and the connector 21.
  • the temperature of the exhaust gas is thereby measured.
  • the lead wires 12 are covered with a glass-braided tube 20 for protection against external force such as flying stones. A front end part of this glass-braided tube 20 is fixed by crimping to the metallic cover member 6 together with the elastic sealing member 13.
  • the temperature sensor 100 which has the structure described above, employs the thermistor element 2 including the conductive sintered oxide 1 described above, the temperature of the exhaust gas of an automobile engine can be suitably measured over a wide range from a low temperature of -40°C to a high temperature of +600°C.
  • the thermistor element changes little in resistance with the lapse of time and exhibits a stable resistance. This temperature sensor hence has stable properties.
  • the temperature sensor 100 can be configured so that when, for example, a voltage of 5 V is applied to the temperature sensor 100, the output therefrom can be obtained as a voltage which varies in the range of 4.8-0.2 V in the temperature range of -40°C to +600°C. Consequently, even when the output is inputted to a circuit having a maximum input voltage of 5 V, the temperature can be suitably measured. In addition, even when the temperature sensor 100 (thermistor element 2) has a low temperature (-40°C), the output therefrom is about 4.8 V and does not reach 5.0 V. A difference between this state and wire breakage can hence be recognized, and wire breakage can be easily and precisely detected.
  • thermosensor 100 thermoistor element 2
  • the output therefrom is about 0.2 V and does not fall to 0 V. A difference between this state and short-circuiting can hence be recognized, and short-circuiting can be easily and precisely detected.
  • the conductive sintered oxide for producing the conductive sintered oxide (thermistor element), powders of the compounds containing the elements which were shown in the Examples can be used as starting-material powders. Also usable besides these are compounds such as oxides, carbonates, hydroxides and nitrates. The use of oxides or carbonates is especially preferred.
  • both Mn and Cr or Mn were used besides Al in the Examples.
  • one or more other elements selected from the Groups IVA, VA, VIA, VIIA and VIII can be used optionally together with Mn or Cr.
  • the conductive sintered oxide may contain other components such as, for example, Na, K, Ga, Si, C, Cl and S so long as the incorporation of such components does not impair sinterability for producing the conductive sintered oxide or the properties required of the conductive sintered oxide, thermistor element, or temperature sensor, such as constant B and high-temperature durability of temperature characteristics.

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Claims (6)

  1. Oxyde fritté conducteur qui comprend :
    une phase cristalline conductrice ayant une structure de type pérovskite représentée par (RE1-cSrc)MdO3, dans laquelle
    RE représente un groupe d'éléments constitué de Yb et/ou Lu et d'au moins un élément choisi parmi le Groupe IIIA à l'exclusion de Yb, Lu et La et
    M représente un groupe d'éléments constitué de Al et d'au moins un élément choisi parmi les Groupes IVA, VA, VIA, VIIA et VIII,
    une première phase cristalline isolante représentée par RE2O3, dans laquelle RE est tel que défini ci-dessus, et
    une deuxième phase cristalline isolante représentée par SrAl2O4, dans lequel la phase cristalline conductrice a un coefficient c qui satisfait 0,18 < c < 0,50,
    la phase cristalline conductrice a un coefficient d satisfaisant 0,67 ≤ d ≤ 0,93, le coefficient d indiquant un rapport entre une quantité du groupe d'éléments RE1-cSrc constituant les sites A et la quantité du groupe d'éléments M constituant les sites B de la phase cristalline conductrice, et
    une teneur d'une troisième phase cristalline isolante représentée par RE4Al2O9, dont la teneur peut être égale à zéro, est inférieure à la teneur de la première phase cristalline isolante et est inférieure à la teneur de la deuxième phase cristalline isolante.
  2. Oxyde fritté conducteur tel que revendiqué dans la revendication 1, dans lequel dans une section transversale de l'oxyde fritté conducteur, un rapport d'une proportion surfacique de la troisième phase cristalline isolante Si3 à une proportion surfacique de la phase cristalline conductrice Sc, Si3/Sc (%), satisfait Si3/Sc ≤ 6,0 (%).
  3. Oxyde fritté conducteur tel que revendiqué dans la revendication 1, dans lequel le coefficient d satisfait 0,67 ≤ d < 0,90.
  4. Oxyde fritté conducteur selon la revendication 1, dans lequel le groupe d'éléments M inclut Al, Mn et Cr, et
    la phase cristalline conductrice est représentée par (RE1-cSrc)(AlxMnyCrz)O3, dans laquelle les coefficients x, y et z (x + y + z = d) satisfont les relations suivantes
    0,40 ≤ x ≤ 0,87
    0,05 ≤ y ≤ 0,52
    0 < z ≤ 0,05.
  5. Élément à thermistor qui comprend l'oxyde fritté conducteur tel que revendiqué dans la revendication 1.
  6. Capteur de température qui comprend l'élément à thermistor tel que revendiqué dans la revendication 5.
EP20110177815 2010-08-17 2011-08-17 Oxyde fritté conducteur, élément à thermistor l'incluant et capteur de température l'incluant Active EP2421007B1 (fr)

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JP5851591B2 (ja) * 2012-04-06 2016-02-03 日本特殊陶業株式会社 酸化物焼結体及びそれを用いた配線基板
JP6010473B2 (ja) * 2012-04-10 2016-10-19 日本特殊陶業株式会社 導電性酸化物焼結体、サーミスタ素子及び温度センサ
JP6301753B2 (ja) * 2014-06-25 2018-03-28 日本特殊陶業株式会社 温度センサ
KR101908775B1 (ko) 2015-04-06 2018-10-16 니뽄 도쿠슈 도교 가부시키가이샤 도전성 산화물 소결체, 그것을 사용한 서미스터 소자 및 온도 센서
JP6491074B2 (ja) * 2015-04-06 2019-03-27 日本特殊陶業株式会社 導電性酸化物焼結体、それを用いたサーミスタ素子及び温度センサ
JP6440641B2 (ja) * 2016-01-08 2018-12-19 日本特殊陶業株式会社 導電性酸化物焼結体、これを用いたサーミスタ素子、および、これを用いた温度センサ
CN112088411B (zh) * 2018-10-30 2022-05-27 株式会社芝浦电子 热敏电阻烧结体及温度传感器元件

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KR101155688B1 (ko) 2005-04-11 2012-06-12 니뽄 도쿠슈 도교 가부시키가이샤 도전성 산화물 소결체, 도전성 산화물 소결체를 이용한서미스터 소자, 및 서미스터 소자를 이용한 온도 센서
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JP5140450B2 (ja) * 2008-01-31 2013-02-06 日本特殊陶業株式会社 サーミスタ素子及び温度センサ
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KR101299293B1 (ko) 2013-08-26
CN102417348B (zh) 2015-01-07
EP2421007A2 (fr) 2012-02-22
JP2012043910A (ja) 2012-03-01
US8771559B2 (en) 2014-07-08
KR20120022635A (ko) 2012-03-12
JP5546995B2 (ja) 2014-07-09
EP2421007A3 (fr) 2013-01-02
CN102417348A (zh) 2012-04-18

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