EP2416366A4 - Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements - Google Patents

Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements

Info

Publication number
EP2416366A4
EP2416366A4 EP10761283.0A EP10761283A EP2416366A4 EP 2416366 A4 EP2416366 A4 EP 2416366A4 EP 10761283 A EP10761283 A EP 10761283A EP 2416366 A4 EP2416366 A4 EP 2416366A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
manufacturing
manufacturing semiconductor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP10761283.0A
Other languages
English (en)
French (fr)
Other versions
EP2416366A1 (de
EP2416366B1 (de
Inventor
Hiroshi Kono
Takashi Shinohe
Makoto Mizukami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP2416366A1 publication Critical patent/EP2416366A1/de
Publication of EP2416366A4 publication Critical patent/EP2416366A4/de
Application granted granted Critical
Publication of EP2416366B1 publication Critical patent/EP2416366B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
EP10761283.0A 2009-03-30 2010-01-06 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements Active EP2416366B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009082276A JP2010238738A (ja) 2009-03-30 2009-03-30 半導体装置および半導体装置の製造方法
PCT/JP2010/000043 WO2010116575A1 (ja) 2009-03-30 2010-01-06 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
EP2416366A1 EP2416366A1 (de) 2012-02-08
EP2416366A4 true EP2416366A4 (de) 2013-06-12
EP2416366B1 EP2416366B1 (de) 2015-08-12

Family

ID=42935876

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10761283.0A Active EP2416366B1 (de) 2009-03-30 2010-01-06 Halbleiterbauelement und verfahren zur herstellung eines halbleiterbauelements

Country Status (4)

Country Link
US (2) US8987812B2 (de)
EP (1) EP2416366B1 (de)
JP (1) JP2010238738A (de)
WO (1) WO2010116575A1 (de)

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JP2012104746A (ja) * 2010-11-12 2012-05-31 Mitsubishi Electric Corp 炭化珪素半導体装置およびその製造方法
US9472405B2 (en) 2011-02-02 2016-10-18 Rohm Co., Ltd. Semiconductor power device and method for producing same
US9093361B2 (en) * 2011-06-23 2015-07-28 Mitsubishi Electric Corporation Semiconductor device
JP6017127B2 (ja) * 2011-09-30 2016-10-26 株式会社東芝 炭化珪素半導体装置
JP2013122982A (ja) * 2011-12-12 2013-06-20 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JP2013131512A (ja) * 2011-12-20 2013-07-04 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP2013145770A (ja) 2012-01-13 2013-07-25 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP2013172111A (ja) * 2012-02-23 2013-09-02 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
JP2013235895A (ja) * 2012-05-07 2013-11-21 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP5809596B2 (ja) * 2012-05-07 2015-11-11 住友電気工業株式会社 半導体装置およびその製造方法
JP6061181B2 (ja) 2012-08-20 2017-01-18 ローム株式会社 半導体装置
JP6068918B2 (ja) * 2012-10-15 2017-01-25 住友電気工業株式会社 半導体装置およびその製造方法
JP6112600B2 (ja) * 2012-12-10 2017-04-12 ローム株式会社 半導体装置および半導体装置の製造方法
JP6007771B2 (ja) * 2012-12-14 2016-10-12 豊田合成株式会社 半導体装置
JP6007770B2 (ja) * 2012-12-14 2016-10-12 豊田合成株式会社 半導体装置
JP6007769B2 (ja) * 2012-12-14 2016-10-12 豊田合成株式会社 半導体装置
US9666681B2 (en) * 2013-03-19 2017-05-30 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
JP6135364B2 (ja) * 2013-07-26 2017-05-31 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP5971218B2 (ja) 2013-09-30 2016-08-17 サンケン電気株式会社 半導体装置
US9324802B2 (en) * 2013-10-31 2016-04-26 Infineon Technologies Austria Spacer supported lateral channel FET
JP6183200B2 (ja) * 2013-12-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6125420B2 (ja) * 2013-12-26 2017-05-10 株式会社豊田中央研究所 半導体装置
JP6435686B2 (ja) * 2014-07-23 2018-12-12 富士電機株式会社 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
FR3029014A1 (fr) * 2014-11-24 2016-05-27 Centre Nat De La Rech Scient (Cnrs) Transistor de puissance a structure verticale et a cathode en tranchee
JP6367760B2 (ja) * 2015-06-11 2018-08-01 トヨタ自動車株式会社 絶縁ゲート型スイッチング装置とその製造方法
JP2017059600A (ja) * 2015-09-14 2017-03-23 株式会社東芝 半導体装置及びその製造方法
JP6526591B2 (ja) 2016-03-16 2019-06-05 株式会社東芝 半導体装置
JP6801200B2 (ja) 2016-03-16 2020-12-16 富士電機株式会社 炭化珪素半導体素子の製造方法
JP6844482B2 (ja) * 2017-09-26 2021-03-17 株式会社豊田中央研究所 窒化物半導体装置とその製造方法
DE102019101326A1 (de) * 2018-01-19 2019-07-25 Infineon Technologies Ag Halbleitervorrichtung, die erste und zweite Kontaktschichten enthält, und Herstellungsverfahren
JP7248541B2 (ja) * 2019-08-23 2023-03-29 株式会社東芝 半導体装置
CN113053991A (zh) * 2019-12-26 2021-06-29 株洲中车时代半导体有限公司 逆导型igbt的元胞结构及逆导型igbt
JP7574558B2 (ja) * 2020-07-13 2024-10-29 富士電機株式会社 半導体装置
JP7577635B2 (ja) * 2021-09-22 2024-11-05 東芝デバイス＆ストレージ株式会社 半導体装置及び半導体装置の製造方法

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EP1460681A2 (de) * 2003-03-18 2004-09-22 Matsushita Electric Industrial Co., Ltd. Siliziumkarbidhalbleiterbauelement und Verfahren zur dessen Herstellung
US20040214453A1 (en) * 2003-04-23 2004-10-28 Takeshi Endou Method of manufacturing silicon carbide semiconductor device
US20060097267A1 (en) * 2004-11-08 2006-05-11 C/O Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
WO2008114838A1 (ja) * 2007-03-13 2008-09-25 Osaka University Ｐ型４Ｈ-ＳｉＣ基板上のオーミック電極の形成方法

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US20040214453A1 (en) * 2003-04-23 2004-10-28 Takeshi Endou Method of manufacturing silicon carbide semiconductor device
US20060097267A1 (en) * 2004-11-08 2006-05-11 C/O Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
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See also references of WO2010116575A1 *

Also Published As

Publication number Publication date
EP2416366A1 (de) 2012-02-08
EP2416366B1 (de) 2015-08-12
US20150137145A1 (en) 2015-05-21
US9437682B2 (en) 2016-09-06
WO2010116575A1 (ja) 2010-10-14
US20120037922A1 (en) 2012-02-16
US8987812B2 (en) 2015-03-24
JP2010238738A (ja) 2010-10-21

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