EP2261995B1 - Solarzelle und verfahren zu ihrer herstellung - Google Patents

Solarzelle und verfahren zu ihrer herstellung Download PDF

Info

Publication number
EP2261995B1
EP2261995B1 EP09721439.9A EP09721439A EP2261995B1 EP 2261995 B1 EP2261995 B1 EP 2261995B1 EP 09721439 A EP09721439 A EP 09721439A EP 2261995 B1 EP2261995 B1 EP 2261995B1
Authority
EP
European Patent Office
Prior art keywords
transparent conductive
conductive film
semiconductor layer
solar cell
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP09721439.9A
Other languages
English (en)
French (fr)
Other versions
EP2261995A4 (de
EP2261995A1 (de
Inventor
Daisuke Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Publication of EP2261995A1 publication Critical patent/EP2261995A1/de
Publication of EP2261995A4 publication Critical patent/EP2261995A4/de
Application granted granted Critical
Publication of EP2261995B1 publication Critical patent/EP2261995B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Definitions

  • the present invention relates to a solar cell including transparent conductive films formed on a photoelectric conversion body and a method for manufacturing the same.
  • Solar cells are expected as a new source of energy, because solar cells are capable of directly converting light, which comes from the sun as a clean, unlimited source of energy, to electricity.
  • a solar cell includes a photoelectric conversion body which has an n-type semiconductor layer and a p-type semiconductor layer and receives light to generate photogenerated carriers.
  • the carriers are extracted from the photoelectric conversion body through electrodes formed on the n- and p-type semiconductor layers.
  • Each electrode to be used has a layered structure of a transparent conductive film and a metallic layer in some cases. In such a case, it is desirable that the transparent conductive film have low electric resistivity.
  • the surface characteristics of the photoelectric conversion body could be degraded. Specifically, hydrogen radicals having reducing properties could degrade the surfaces of the n- and p-type semiconductor layers when the transparent conductive films are formed.
  • the present invention was made in the light of the aforementioned problem, and an object of the present invention is to provide a solar cell with the surface characteristics of the photoelectric conversion body prevented from being degraded and a method for manufacturing the same.
  • EP0204554A2 discloses a photoconductive device that is provided by using at least one zinc oxide transparent conductive layer in conjunction with a thin film amorphous silicon photoconductor.
  • the zinc oxide layer can be used as the front contact, the back contact or both the front and back contacts of the photoconductive device.
  • the hydrogen atom content of the first transparent conductive film formed on the first major surface on the n-type semiconductor layer side is lower than that of the second transparent conductive film formed on the second major surface. This can reduce the effect of hydrogen radicals on the surface of the n-type semiconductor layer forming the first major surface of the photoelectric conversion body. The degradation of the surface characteristics of the photoelectric conversion body can be therefore prevented.
  • the solar cell according to the first aspect of the present invention may optionally be as specified in any one of claims 2 to 4.
  • the method according to the second aspect of the present invention may optionally be as specified in claim 6.
  • the step B may be performed after the step A is performed.
  • Fig. 1 is a plan view of the solar cell 10 on a second major surface S2 side.
  • Fig. 2 is an A-A cross-sectional view of Fig. 1 .
  • the solar cell 10 includes a solar cell substrate 1, fine-line electrodes 2, and connecting electrodes 3.
  • the solar cell substrate 1 includes a photoelectric conversion body 11, a first transparent conductive film 12, and a second transparent conductive film 13.
  • the photoelectric conversion body 11 is configured to generate photogenerated carriers upon receiving light.
  • the solar cell substrate 1 includes a first major surface S1 (the lower surface in Fig. 2 ) and a second major surface S2 (the upper surface in Fig. 2 ) provided on the opposite side to the first major surface S1. The structure of the solar cell substrate 1 is described later.
  • the fine-line electrodes 2 are collecting electrodes configured to collect photogenerated carriers from the photoelectric conversion body 11.
  • the fine-line electrodes 2 are formed on the second major surface S2 of the solar cell substrate 1 along a first direction substantially parallel to a side of the solar cell substrate 1 as shown in Fig. 1 . Some of the plurality of fine-line electrodes 2 are arranged substantially at regular intervals in a second direction substantially orthogonal to the first direction.
  • the other fine-line electrodes 2 (not shown) are formed on the first major surface S1 of the solar cell substrate 1 in a similar manner to those on the second major surface S2 of the solar cell substrate 1.
  • the fine-line electrodes 2 formed on the second major surface S2 of the solar cell substrate 1 collect carriers from the photoelectric conversion body 11 through the second transparent conductive film 13 later described.
  • the fine-line electrodes 2 formed on the first major surface S1 of the solar cell substrate 1 collect carriers from the photoelectric conversion body 11 through the first transparent conductive film 12 later described.
  • the fine-line electrodes 2 can be formed, for example, by printing resin-type conductive paste which includes a resin material as a binder and conductive particles such as silver particles as a filler or sintered-type conductive paste containing silver powder, glass frit, organic vehicle, organic solvent, and the like (so-called ceramic paste) by using a printing process.
  • resin-type conductive paste which includes a resin material as a binder and conductive particles such as silver particles as a filler or sintered-type conductive paste containing silver powder, glass frit, organic vehicle, organic solvent, and the like (so-called ceramic paste) by using a printing process.
  • Each fine-line electrode 2 may be formed as a metallic film by deposition.
  • the number and size of the fine-line electrodes 2 can be set to proper values in consideration of the size of the photoelectric conversion body 11 and the like.
  • the connecting electrodes 3 are electrodes connected to wiring materials (not shown) electrically connecting a plurality of the solar cells 10 in series or in parallel.
  • the connecting electrodes 3 are formed on the second major surface S2 of the solar cell substrate 1 along the second direction as shown in Fig. 1 . Accordingly, some of the connecting electrodes 3 intersect the plurality of fine-line electrodes 2 and are electrically connected to the plurality of fine-line electrodes 2.
  • the other connecting electrodes 3 (not shown) are formed on the first major surface S1 of the solar cell substrate 1 in a similar manner to the first major surface S2 of the solar cell substrate 1.
  • the connecting electrodes 3 can be formed by printing or deposition in a similar way to the fine-line electrodes 2.
  • the number and size of the connecting electrodes 3 can be set to proper values in consideration of the size of the photoelectric conversion body 11 and the like.
  • the solar cell substrate 1 includes the photoelectric conversion body 11 and the first and second transparent conductive films 12 and 13 as shown in Fig. 2 .
  • the photoelectric conversion body 11 includes the first major surface S1 (the lower surface in Fig. 2 ) and the second major surface S2 (the upper surface in Fig. 2 ) provided on the opposite side to the first major surface S1.
  • the photoelectric conversion body 11 receives light through the first or second major surface S1 or S2 of the photoelectric conversion body 11 to generate photogenerated carriers.
  • Each of the photogenerated carriers refers to a pair of a hole and an electron generated upon the photoelectric conversion body 11 absorbing solar light.
  • the photoelectric conversion body 11 includes an n-type substrate 11a, an i-type semiconductor layer 11b, a p-type semiconductor layer 11c, an i-type semiconductor layer 11d, and an n-type semiconductor layer 11e as shown in Fig. 2 .
  • the n-type substrate 11a is a main body of the photoelectric conversion body 11.
  • an n-type single-crystalline silicon substrate is used for the n-type substrate 11a.
  • the p-type semiconductor layer 11c is formed on the second major surface S2 side of the n-type substrate 11a with the i-type semiconductor layer 11b interposed therebetween.
  • the n-type semiconductor layer 11e is formed on the first major surface S1 side of the n-type substrate 11a with the i-type semiconductor layer 11d interposed therebetween.
  • the second major surface S2 of the photoelectric conversion body 11 is formed by the p-type semiconductor layer 11c
  • the first major surface S1 of the photoelectric conversion body 11 is formed by the n-type semiconductor layer 11e.
  • an i-type amorphous semiconductor layer can be used.
  • an i-type amorphous semiconductor layer can be used for the i-type semiconductor layers 11b and 11d .
  • an i-type amorphous semiconductor layer can be used for the p-type semiconductor layer layer 11c and the n-type semiconductor layer 11e .
  • the i-type semiconductor layers 11b and 11d constituted by i-type amorphous semiconductor layers have such thicknesses that the i-type semiconductor layers 11b and 11d substantially do not contribute to power generation.
  • the thicknesses of the i-type semiconductor layers 11b and 11d are preferably in a range from several ⁇ to 250 ⁇ .
  • the amorphous semiconductors can be silicon-based semiconductors such as amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, and microcrystalline silicon.
  • the structure of the photoelectric conversion body 11 is not limited to the aforementioned structure.
  • the photoelectric conversion body 11 does not need to include the i-type semiconductor layers 11b and 11d and may have another structure.
  • the first transparent conductive film 12 is formed on the n-type semiconductor layer 11e forming the first major surface S1 of the photoelectric conversion body 11.
  • the first transparent conductive film 12 has translucency and conductivity.
  • a metal oxide such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), or titanium oxide (TiO 2 ) can be used.
  • These metal oxides may be doped with a dopant such as tin (Sn), zinc (Zn), tungsten (W), antimony (Sb), titanium (Ti), cerium (Ce), zirconium (Zr), molybdenum (Mo), aluminum (Al), or gallium (Ga).
  • a dopant such as tin (Sn), zinc (Zn), tungsten (W), antimony (Sb), titanium (Ti), cerium (Ce), zirconium (Zr), molybdenum (Mo), aluminum (Al), or gallium (Ga).
  • concentration of the dopant can be 0 to 20 wt%.
  • the second transparent conductive film 13 is formed on the p-type semiconductor layer 11c forming the second major surface S2 of the photoelectric conversion body 11.
  • the second transparent conductive film 13 has translucency and conductivity.
  • a metal oxide such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), or titanium oxide (TiO 2 ) can be used.
  • These metal oxides may be doped with a dopant such as tin (Sn), zinc (Zn), tungsten (W), antimony (Sb), titanium (Ti), cerium (Ce), zirconium (Zr), molybdenum (Mo), aluminum (Al), or gallium (Ga).
  • a dopant such as tin (Sn), zinc (Zn), tungsten (W), antimony (Sb), titanium (Ti), cerium (Ce), zirconium (Zr), molybdenum (Mo), aluminum (Al), or gallium (Ga).
  • the concentration of the dopant can be 0 to 20 wt%.
  • the materials constituting the second transparent conductive film 13 may be either the same as or different from materials constituting the first transparent conductive film 12.
  • the hydrogen atom content of the first transparent conductive film 12 is lower than that of the second transparent conductive film 13. Accordingly, a metal oxide formed in an atmosphere not containing hydrogen can be used for the first transparent conductive film 12 while a metal oxide formed in an atmosphere supplying hydrogen atoms (an atmosphere containing hydrogen) can be used for the second transparent conductive film 13.
  • the n-type substrate 11a is etched to form fine roughness on the first and second major surfaces S1 and S2 sides.
  • the i-type and p-type semiconductor layers 11b and 11c are sequentially stacked on the second major surface S2 side of the n-type substrate 11a using CVD or the like.
  • the i-type and n-type semiconductor layers 11d and 11e are sequentially stacked on the first major surface S1 side of the n-type substrate 11a in a similar manner.
  • the photoelectric conversion body 11 is thus formed.
  • the first transparent conductive film 12 is formed on the n-type semiconductor layer 11e by using a sputtering method or the like in an atmosphere not containing hydrogen such as an Ar and O 2 atmosphere.
  • the atmosphere not containing hydrogen refers to an atmosphere not actively supplying hydrogen atoms.
  • the hydrogen atom contents of the transparent conductive films formed in the atmosphere not containing hydrogen are about 1.0 ⁇ 10 20 to 5.2 ⁇ 10 20 (atoms/cc).
  • the second transparent conductive film 13 is formed on the p-type semiconductor layer 11c in an atmosphere containing hydrogen.
  • the second transparent conductive film 13 is formed in an Ar, O 2 , and H 2 O atmosphere, an Ar, O 2 , and H 2 atmosphere, or the like where hydrogen atoms are being supplied thereto.
  • the hydrogen atom content of the second transparent conductive film 13 is therefore higher than that of the first transparent conductive film 12.
  • the solar cell substrate 1 is thus formed.
  • the process to form the second transparent conductive film 13 is performed after the process to form the first transparent conductive film 12 is performed.
  • epoxy-based thermosetting-type silver paste is placed on the second major surface S2 of the solar cell substrate 1 in a predetermined pattern by using a printing process such as screen printing or off-set printing.
  • epoxy-based thermosetting-type silver paste is placed on the first major surface S1 of the solar cell 1 in a predetermined pattern.
  • the silver paste is heated under predetermined conditions for volatilization of the solvent and is then further heated for final drying.
  • the predetermined patterns have the shapes corresponding to the fine-line electrodes 2 extending along the first direction and the connecting electrodes 3 extending along the second direction as shown in Fig. 1 .
  • the solar cell 10 is thus manufactured.
  • the first transparent conductive film 12 is formed on the n-type semiconductor layer 11e, which forms the first major surface S1 of the photoelectric conversion body 11, in the atmosphere not containing hydrogen.
  • the second transparent conductive film 13 is formed on the p-type semiconductor layer 11c, which forms the second major surface S2 of the photoelectric conversion body 11, in the atmosphere containing hydrogen.
  • the hydrogen atom content of the first transparent conductive film 12 formed on the first major surface S1 of the photoelectric conversion body 11 is therefore lower than that of the second transparent conductive film 13 formed on the second major surface S2 of the photoelectric conversion body 11.
  • the applicant examined the influence of hydrogen radicals on the surfaces of the p-type and n-type semiconductor layer 11c and 11e in the case where the transparent conductive films were formed in the atmosphere containing hydrogen on the p-type semiconductor layer 11c forming the second major surface S2 of the photoelectric conversion body 11 and on the n-type semiconductor layer 11e forming the first major surface S1 of the photoelectric conversion body 11.
  • the applicant found that the surface of the n-type semiconductor layer 11e was more likely to be degraded by hydrogen radicals.
  • the first transparent conductive film 12 is formed in the atmosphere not containing hydrogen on the n-type semiconductor layer 11e, the surface of which is more likely to be degraded in the atmosphere containing hydrogen, so that the surface of the n-type semiconductor layer 11e can be prevented from being degraded by hydrogen radicals.
  • the second transparent conductive film 13 is formed on the p-type semiconductor layer 11c, which is less affected by hydrogen radicals in the atmosphere containing hydrogen than the n-type semiconductor layer 11e, with hydrogen atoms being actively introduced thereto. This can provide increased translucency and reduced electric resistivity to the second transparent conductive film 13. As described above, in the solar cell 10 according to the first embodiment of the present invention, it is possible to prevent the degradation of the surface characteristics of the photoelectric conversion body 11.
  • the second transparent conductive film 13 is formed on the p-type semiconductor layer 11c after the first transparent conductive film 12 is formed on the n-type semiconductor layer 11e, the surface of the n-type semiconductor layer 11e is protected by the first transparent conductive film 12. This can further reduce the influence of hydrogen radicals on the surface of the n-type semiconductor layer 11e when the second transparent conductive film 13 is formed in the atmosphere containing hydrogen.
  • the hydrogen atom content of the first transparent conductive film 12 on the n-type semiconductor layer 11e side is substantially the same as that of the first transparent conductive film 12 on the opposite side to the n-type semiconductor layer 11e.
  • the hydrogen atom content of the first transparent conductive film 12 on the n-type semiconductor layer 11e side is different from that of the first transparent conductive film 12 on the opposite side to the n-type semiconductor layer 11e.
  • the schematic structure of the solar cell 10 according to the second embodiment of the present invention is substantially the same as that of the solar cell 10 according to the first embodiment, and the description thereof is omitted herein.
  • the solar cell substrate 1 includes the photoelectric conversion body 11, the first transparent conductive film 12, and the second transparent conductive film 13 as shown in Fig. 3 .
  • the structures of the photoelectric conversion body 11 and second transparent conductive film 13 are substantially the same as those of the aforementioned first embodiment, and the description thereof is omitted.
  • the first transparent conductive film 12 includes a third transparent conductive film 12a and a fourth transparent conductive film 12b as shown in Fig. 3 .
  • the third transparent conductive film 12a is formed on the n-type semiconductor layer 11e forming the first major surface S1 of the photoelectric conversion body 11.
  • the fourth transparent conductive film 12b is formed on the third transparent conductive film 12a.
  • the third and fourth transparent conductive films 12a and 12b include translucency and conductivity.
  • a metal oxide such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), or titanium oxide (TiO 2 ) can be used.
  • These metal oxides may be doped with a dopant such as tin (Sn), zinc (Zn), tungsten (W), antimony (Sb), titanium (Ti), cerium (Ce), zirconium (Zr), molybdenum (Mo), aluminum (Al), or gallium (Ga).
  • a dopant such as tin (Sn), zinc (Zn), tungsten (W), antimony (Sb), titanium (Ti), cerium (Ce), zirconium (Zr), molybdenum (Mo), aluminum (Al), or gallium (Ga).
  • concentration of the dopant can be 0 to 20 wt%.
  • the hydrogen atom content of the fourth transparent conductive film 12b is higher than that of the third transparent conductive film 12a.
  • the hydrogen atom content of a half of the first transparent conductive film 12 on the opposite side to the n-type semiconductor layer 11e is higher than that of the other half on the n-type semiconductor layer 11e side.
  • the hydrogen atom content of the third transparent conductive film 12a is lower than that of the second transparent conductive film 13.
  • the hydrogen atom content of the half of the first transparent conductive film 12 on the n-type semiconductor layer 11e side is lower than that of the second transparent conductive film 13.
  • the third transparent conductive film 12a a metallic oxide formed in the atmosphere not containing hydrogen can be used while a metallic oxide formed in the atmosphere supplying hydrogen atoms (the atmosphere containing hydrogen) in a similar manner to the second transparent conductive film 13 can be used for the fourth transparent conductive film 12b.
  • the materials constituting the second, third, and fourth transparent conductive films 13, 12a, and 12b may be the same or different.
  • the photoelectric conversion body 11 is formed in the same way as the aforementioned first embodiment.
  • the third transparent conductive film 12a is formed on the n-type semiconductor layer 11e, which forms the first major surface S1 of the photoelectric conversion body 11, by using a sputtering method or the like in the atmosphere not containing hydrogen such as an Ar and O 2 atmosphere.
  • the second transparent conductive film 13 is formed on the p-type semiconductor layer 11c by using a sputtering method or the like in the atmosphere containing hydrogen. Specifically, the second transparent conductive film 13 is formed in an Ar, O 2 , and water vapor atmosphere, an Ar, O 2 , and hydrogen atmosphere, or the like where hydrogen atoms are being supplied. The hydrogen atom content of the second transparent conductive film 13 is therefore made higher than that of the third transparent conductive film 12a.
  • the fourth transparent conductive film 12b is formed on the third transparent conductive film 12a by using a sputtering method or the like in the atmosphere containing hydrogen. Specifically, the fourth transparent conductive film 12b is formed in an Ar, O 2 , and water vapor atmosphere, an Ar, O 2 , and hydrogen atmosphere, or the like where hydrogen atoms are being supplied. The hydrogen atom content of the fourth transparent conductive film 12b is therefore made higher than that of the third transparent conductive film 12a. The first transparent conductive film 12 is thus formed.
  • the solar cell substrate 1 is formed in such a manner.
  • the fine-line electrodes 2 and connecting electrodes 3 are formed in the same way as the aforementioned first embodiment.
  • the solar cell 10 is thus formed.
  • the first transparent conductive film 12 formed on the n-type semiconductor layer 11e includes the third and fourth transparent conductive films 12a and 12b.
  • the third transparent conductive film 12a is formed on the n-type semiconductor layer 11e in the atmosphere not containing hydrogen
  • the fourth transparent conductive film 12b is formed on the third transparent conductive film 12a in the atmosphere containing hydrogen.
  • FIG. 4 is a cross-sectional view of a thin film-type solar cell 20.
  • the thin film-type solar cell 20 includes a substrate 21 having translucency, a fifth transparent conductive film 22, a photoelectric conversion body 23 configured to receive light and generate photogenerated carriers, a sixth transparent conductive film 24, and a rear electrode layer 25.
  • the photoelectric conversion body 23 has a structure in which a p-type semiconductor layer 23a, an i-type semiconductor layer 23b, and an n-type semiconductor layer 23c are sequentially stacked from the substrate 21 side.
  • the fifth transparent conductive film 22 is formed on the substrate 21 in the atmosphere containing hydrogen, and the sixth transparent conductive film 24 is formed on the n-type semiconductor layer 23c in the atmosphere not containing hydrogen.
  • This can prevent degradation of the surface of the n-type semiconductor layer 23c (corresponding to "the second surface S2" of the aforementioned embodiments) .
  • the translucency of the fifth transparent conductive film 22 can be increased, and the electrical resistivity thereof can be reduced.
  • the p-type semiconductor layer 23a is formed after the fifth transparent conductive film 22 is formed, it is possible to prevent degradation of the surface of the p-type semiconductor layer 23a on the fifth transparent conductive film 22 side (corresponding to "the first surface S1" of the aforementioned embodiment).
  • the structure of the solar cell 20 is not limited to the structure shown in Fig. 4 and may be a structure in which the fifth transparent conductive film 22, photoelectric conversion body 23, sixth transparent conductive film 24, rear electrode layer 25, and substrate 21 are stacked in this order.
  • the structure of the photoelectric conversion body 23 is not limited to the structure shown in Fig.
  • n-type, i-type, and p-type semiconductor layers 23c, 23b, and 23a are sequentially stacked from the substrate 21 side or a structure in which the p-type and n-type semiconductor layers 23a and 23c are sequentially stacked from the substrate 21 side.
  • p-type, i-type, and n-type semiconductor layers 23a, 23b, and 23c p-type, i-type, and n-type semiconductor materials of amorphous Si, amorphous SiC, amorphous SiGe, microcrystalline Si, or the like can be used, respectively.
  • the aforementioned first and second embodiments describe about the case where the fine-line electrodes 2 and connecting electrodes 3 having the same shapes as those formed on the second major surface S2 of the solar cell substrate 1 are formed on the first major surface S1 of the solar cell substrate 1, but the present invention is not limited to such a case.
  • the fine-line electrodes 2 may be formed so as to cover substantially all over any one of the first and second major surfaces S1 and S2 of the solar cell substrate 1.
  • the photoelectric conversion body 11 includes the n-type substrate 11a, i-type semiconductor layer 11b, p-type semiconductor layer 11c, i-type semiconductor layer 11d, and n-type semiconductor layer 11e, but the present invention is not limited to such a case. Instead, the present invention is defined by the appended claims.
  • the third and fourth transparent conductive films 12a and 12b having different hydrogen atom contents are formed as the first transparent conductive film 12 so that the hydrogen atom content of the part of the first transparent conductive film 12 on the opposite side to the n-type semiconductor layer 11e is higher than that of the part of the first transparent conductive film 12 on the n-type semiconductor layer 11e side.
  • the present invention is not limited to this.
  • the first transparent conductive film 12 composed of a single film may be formed so that the hydrogen atom content thereof increases from the n-type semiconductor layer 11e side toward the opposite side to the n-type semiconductor layer 11e.
  • the first transparent conductive film 12 having such a structure can be formed, for example, by employing the atmosphere not containing hydrogen as the condition for forming the first transparent conductive film 12 in a first part of the forming process and then increasing the supply amount of hydrogen atoms stepwisely so that the condition for forming the first transparent conductive film 12 can be the atmosphere containing hydrogen in a last part of the forming process.
  • the solar cell according to the present invention is specifically described with examples.
  • the present invention is not limited to the following examples and can be implemented with appropriate modification without changing the scope of the present invention.
  • test films A and B were measured by SIMS.
  • the test films A were In 2 O 3 films formed in the atmosphere not containing hydrogen by using a sputtering method
  • test films B were In 2 O 3 formed in the atmosphere containing hydrogen by using a sputtering method.
  • the measurement results of the hydrogen atom contents of the test films are shown in Table 1.
  • the hydrogen atom contents of the test films A which were In 2 O 3 films formed in the atmosphere not containing hydrogen, were about 1.0 ⁇ 10 20 to 5.2 ⁇ 10 20 (atoms/cc) while the hydrogen atom contents of the test films B, which were In 2 O 3 films formed in the atmosphere containing hydrogen to actively incorporate hydrogen atoms, were 1.6 ⁇ 10 21 to 2.1 ⁇ 10 21 (atoms/cc) .
  • the solar cell according to Example 1 was manufactured as follows. First, an n-type single-crystalline silicon substrate (n-type substrate 11a) with a thickness of 200 ⁇ m was anisotropically etched with an alkaline aqueous solution to form fine roughness on the first and second major surfaces. The first and second major surfaces of the n-type substrate 11a were cleaned to remove impurities.
  • an i-type amorphous silicon layer (i-type semiconductor layer 11b) and a p-type amorphous silicon layer (p-type semiconductor layer 11c) were sequentially stacked by using a plasma CVD method or the like.
  • an i-type amorphous silicon layer (i-type semiconductor layer 11d) and an n-type amorphous silicon layer (n-type semiconductor layer 11c) were sequentially stacked.
  • the i-type amorphous silicon layer (i-type semiconductor layer 11b), p-type amorphous silicon layer (p-type semiconductor layer 11c), i-type amorphous silicon layer (i-type semiconductor layer 11d), and n-type amorphous silicon layer (n-type semiconductor layer 11c) each have a thickness of 5 mm.
  • the photoelectric conversion body (photoelectric conversion body 11) was thus formed.
  • an IHO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen).
  • the IHO film (second transparent conductive film 13) was an In 2 O 3 film formed in the atmosphere containing hydrogen to have a hydrogen atom content higher than that of an ITO film (first transparent conductive film 12) later described.
  • the IHO film (second transparent conductive film 13) had a thickness of 1000 ⁇ and was formed at room temperature.
  • the ITO film (first transparent conductive film 12) was formed by using a sputtering method in an Ar and O 2 atmosphere (atmosphere not containing hydrogen) .
  • the ITO film (first transparent conductive film 12) had a thickness of 1000 ⁇ and was formed at room temperature.
  • the ITO film (first transparent conductive film 12) was formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) after the IHO film (second transparent conductive film 13) was formed on the p-type amorphous silicon layer (p-type semiconductor layer 11c).
  • the solar cell substrate (solar cell substrate 1) was thus formed.
  • paste including a conductive filler mainly containing Ag and thermosetting resin was placed in predetermined patterns on the second and first major surfaces of the solar cell substrate (solar cell substrate 1) by using a screen printing method and was then annealed at 200°C. Fine-line electrodes (fine-line electrodes 2) and connecting electrodes (connecting electrodes 3) were thus formed.
  • the solar cell according to Example 1 was formed in such a manner.
  • the solar cell according to Example 2 was manufactured in the following manner. First the photoelectric conversion body (photoelectric conversion body 11) was formed in the same way as Example 1 described above.
  • the ITO film (first transparent conductive film 12) was formed by using a sputtering method in an Ar and O 2 atmosphere (atmosphere not containing hydrogen) .
  • the ITO film (first transparent conductive film 12) had a thickness of 1000 ⁇ and was formed at room temperature.
  • an IHO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen).
  • the IHO film (second transparent conductive film 13) had a thickness of 1000 ⁇ and was formed at room temperature .
  • the IHO film (second transparent conductive film 13) was formed on the p-type amorphous silicon layer (p-type semiconductor layer 11c) after the ITO film (first transparent conductive film 12) was formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) in a reverse order to that in Example 1.
  • the solar cell substrate (solar cell substrate 1) was thus formed.
  • fine-line electrodes fine-line electrodes 2 and connecting electrodes (connecting electrodes 3) were formed in the same way as Example 1 described above.
  • the solar cell according to Example 2 was formed in such a manner.
  • the solar cell according to Example 3 was manufactured in the following manner. First the photoelectric conversion body (photoelectric conversion body 11) was formed in the same way as Example 1 described above.
  • the ITO film (third transparent conductive film 12a) was formed by using a sputtering method in an Ar and O 2 atmosphere (atmosphere not containing hydrogen) .
  • the ITO film (third transparent conductive film 12a) had a thickness of 500 ⁇ and was formed at room temperature.
  • an IHO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen).
  • the IHO film (second transparent conductive film 13) had a thickness of 1000 ⁇ and was formed at room temperature.
  • an IHO film (fourth transparent film 12b) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen) .
  • the IHO film (fourth transparent film 12b) was an In 2 O 3 film formed in the atmosphere containing hydrogen to have a hydrogen atom content higher than that of the ITO film (third transparent conductive film 12a).
  • the IHO film (fourth transparent film 12b) had a thickness of 500 ⁇ and was formed at room temperature.
  • fine-line electrodes fine-line electrodes 2 and connecting electrodes (connecting electrodes 3) were formed in the same way as Example 2 described above.
  • the solar cell according to Example 3 was formed in such a manner.
  • Example 4 the thickness of the ITO film (third transparent conductive film 12a) in Example 3 described above was changed to 200 ⁇ , and the thickness of the IHO film (fourth transparent conductive film 12b) was changed to 800 ⁇ .
  • the structures of the solar cells according to Example 4 and Example 3 described above were the same except that the thicknesses of the ITO film (third transparent conductive film 12a) and the IHO film (fourth transparent conductive film 12b) were changed.
  • Example 5 the thickness of the ITO film (third transparent conductive film 12a) in Example 3 described above was changed to 150 ⁇ , and the thickness of the IHO film (fourth transparent conductive film 12b) was changed to 850 ⁇ .
  • the structures of the solar cells according to Example 5 and Example 3 described above were the same except that the thicknesses of the ITO film (third transparent conductive film 12a) and the IHO film (fourth transparent conductive film 12b) were changed.
  • Example 6 the thickness of the ITO film (third transparent conductive film 12a) in Example 3 described above was changed to 100 ⁇ , and the thickness of the IHO film (fourth transparent conductive film 12b) was changed to 900 ⁇ .
  • the structures of the solar cells according to Example 6 and Example 3 described above were the same except that the thicknesses of the ITO film (third transparent conductive film 12a) and the IHO film (fourth transparent conductive film 12b) were changed.
  • Example 7 the thickness of the ITO film (third transparent conductive film 12a) in Example 3 described above was changed to 75 ⁇ , and the thickness of the IHO film (fourth transparent conductive film 12b) was changed to 925 ⁇ .
  • the structures of the solar cells according to Example 7 and Example 3 described above were the same except that the thicknesses of the ITO film (third transparent conductive film 12a) and the IHO film (fourth transparent conductive film 12b) were changed.
  • Example 8 an ITO film (first transparent conductive film 12) was formed on an n-type amorphous silicon layer (n-type semiconductor layer 11e) of the photoelectric conversion body (photoelectric conversion body 11) in the same way as Example 2 described above.
  • the ITO film (first transparent conductive film 12) had a thickness of 1000 ⁇ and was formed at room temperature.
  • an IHTO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen) .
  • the IHTO film (second transparent conductive film 13) was an ITO film formed in the atmosphere containing hydrogen to have a high hydrogen atom content.
  • the IHTO film had a thickness of 1000 ⁇ and was formed at room temperature.
  • the solar cell substrate (solar cell substrate 1) was thus formed.
  • fine-line electrodes fine-line electrodes 2 and connecting electrodes (connecting electrodes 3) were formed in the same way as Example 2 described above.
  • the solar cell according to Example 8 was thus formed.
  • Example 9 the photoelectric conversion body (photoelectric conversion body 11) was formed in the same way as Example 2 described above.
  • an IWO film (first transparent conductive film 12) was formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) by using a sputtering method in the Ar and O 2 atmosphere (atmosphere not containing hydrogen) .
  • the IWO film (first transparent conductive film 12) was an In 2 O 3 film doped with tungsten (W) .
  • the IWO film (first transparent conductive film 12) had a thickness of 1000 ⁇ and was formed at room temperature.
  • an IHWO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen).
  • the IHWO film (second transparent conductive film 13) was an IWO film formed in the atmosphere containing hydrogen to have a high hydrogen atom content.
  • the IHWO film (second transparent conductive film 13) had a thickness of 1000 ⁇ and was formed at room temperature.
  • the solar cell substrate (solar cell substrate 1) was thus formed.
  • fine-line electrodes fine-line electrodes 2 and connecting electrodes (connecting electrodes 3) were formed in the same way as Example 2 described above.
  • the solar cell according to Example 9 was thus formed.
  • Example 10 the photoelectric conversion body (photoelectric conversion body 11) was formed in the same way as Example 2 described above.
  • an ICO film (first transparent conductive film 12) was formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) by using a sputtering method in the Ar and O 2 atmosphere (atmosphere not containing hydrogen) .
  • the ICO film (first transparent conductive film 12) was an In 2 O 3 film doped with cerium (Ce).
  • the ICO film (first transparent conductive film 12) had a thickness of 1000 ⁇ and was formed at room temperature.
  • an IHCO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen).
  • the IHCO film (second transparent conductive film 13) was an ICO film formed in the atmosphere containing hydrogen to have a high hydrogen atom content.
  • the IHCO film (second transparent conductive film 13) had a thickness of 1000 ⁇ and was formed at room temperature.
  • the solar cell substrate (solar cell substrate 1) was thus formed.
  • fine-line electrodes fine-line electrodes 2 and connecting electrodes (connecting electrodes 3) were formed in the same way as Example 2 described above.
  • the solar cell according to Example 10 was thus formed.
  • the solar cell according to Comparative Example was manufactured in the following manner. First the photoelectric conversion body (photoelectric conversion body 11) was formed in the same way as Example 1 described above.
  • a first IHO film was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen).
  • the first IHO film had a thickness of 1000 ⁇ and was formed at room temperature.
  • a second IHO film (second transparent film 13) was formed by using a sputtering method in an Ar, O 2 , and water vapor atmosphere (the atmosphere containing hydrogen) .
  • the second IHO film had a thickness of 1000 ⁇ and was formed at room temperature.
  • the solar cell substrate (solar cell substrate 1) was thus formed.
  • fine-line electrodes fine-line electrodes 2 and connecting electrodes (connecting electrodes 3) were formed in the same way as Example 1 described above.
  • the solar cell according to Comparative Example was formed in such a manner.
  • the characteristic values including the open-circuit voltage V OC , short-circuit current I SC , fill factor FF, and output power P max were measured for the solar cells according to Examples 1 to 10 and Comparative Example described above. The results of the measurement are shown in Table 2.
  • Table 2 shows the characteristic values of the solar cells according to Examples 1 to 10 normalized with the characteristic values of the solar cell according to Comparative Example set to 100.
  • Fig. 5 shows a relationship between the thickness of the ITO film formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) and the fill factor FF.
  • Fig. 5 shows the fill factors FF of the solar cells according to Examples 2 to 7 normalized with the fill factor FF of the solar cell according to Comparative Example set to 100.
  • the IHO layer was formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e), and the ITO film was not formed thereon.
  • the ITO film thickness ( ⁇ ) of the solar cells according to Comparative Example is therefore zero.
  • the solar cells according to Examples 1 to 10 were improved in the fill factor FF and therefore improved in the output power Pmax. This is because, in each of Examples 1 to 10, the transparent conductive film was formed in the atmosphere not containing hydrogen on the n-type amorphous silicon layer (n-type semiconductor layer 11e) forming the first major surface of the photoelectric conversion body (photoelectric conversion body 11). The degradation of the surface of the n-type amorphous silicon layer (n-type semiconductor layer 11e) was prevented in each of Examples 1 to 10 in comparison with Comparative Example in which the transparent conductive film was formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) in the atmosphere containing hydrogen.
  • the solar cell according to Example 2 was further improved in the fill factor FF and output power Pmax in comparison with the solar cell according to Example 1.
  • the ITO film first transparent conductive film 12
  • the IHO film second transparent conductive film 13
  • the p-type amorphous silicon layer p-type semiconductor layer 11c
  • the surface of the n-type amorphous silicon layer (n-type semiconductor layer 11e) was therefore protected by the ITO film (first transparent conductive film 12). Accordingly, the surface of the n-type amorphous silicon layer (n-type semiconductor layer 11e) was less likely to be degraded when the photoelectric conversion body (photoelectric conversion body 11) was exposed to the atmosphere containing hydrogen.
  • the solar cells according to Examples 8 to 10 were further improved in the fill factor FF and output power Pmax in comparison with the solar cell according to Example 2. This is because the IHTO film containing metallic dopant had a contact resistance with the p-type amorphous silicon layer (p-type semiconductor layer 11c) lower than that of the IHO film not containing metallic dopant.
  • the fill factor FF of the solar cells increased as the thickness of the ITO film (the first transparent conductive film 12 in Example 2 and the third transparent conductive film 12a in Examples 3 to 7) formed on the n-type amorphous silicon layer (n-type semiconductor layer 11e) increased from 0 to 150 ⁇ .
  • the fill factor FF of the solar cells remained substantially constant when the thickness of the ITO film was 150 ⁇ or more. Accordingly, it has been found that it is preferable to form an ITO film having a thickness of 150 ⁇ or more on the n-type amorphous silicon layer (n-type semiconductor layer 11e).
  • the present invention it is possible to provide a solar cell with the surface characteristics of the photoelectric conversion body prevented from being degraded and a method for manufacturing the same. Hence, the present invention is useful in the field of sunlight power generation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Claims (6)

  1. Solarzelle (10), Folgendes umfassend:
    einen fotoelektrischen Umwandlungskörper (11), der konfiguriert ist, um beim Empfangen von Licht fotogenerierte Träger zu erzeugen;
    einen ersten transparenten leitfähigen Film (12), der auf einer ersten Hauptfläche (S1) des fotoelektrischen Umwandlungskörpers (11) ausgebildet ist; und
    einen zweiten transparenten leitfähigen Film (13), der auf einer zweiten Hauptfläche (S2) ausgebildet ist, welche auf einer der ersten Hauptfläche (S1) entgegengesetzten Seite bereitgestellt ist, wobei
    die erste Hauptfläche (S1) durch eine amorphe n-Typ-Halbleiterschicht (11e) ausgebildet ist und wobei
    die zweite Hauptfläche (S2) durch eine amorphe p-Typ-Halbleiterschicht (11c) ausgebildet ist,
    dadurch gekennzeichnet, dass
    der fotoelektrische Umwandlungskörper (11) ein einkristallines n-Typ-Siliziumsubstrat (11a) umfasst, und dass
    der Wasserstoffatomgehalt des ersten transparenten leitfähigen Films (12) geringer ist als jener des zweiten transparenten leitfähigen Films (13).
  2. Solarzelle (10) nach Anspruch 1, wobei der Wasserstoffatomgehalt eines Teils (12b) des ersten transparenten leitfähigen Films (12) auf einer zur n-Typ-Halbleiterschicht (11e) entgegengesetzten Seite des ersten transparenten leitfähigen Films (12) höher ist als der Wasserstoffatomgehalt eines Teils (12a) des ersten transparenten leitfähigen Films (12) in der Nähe der Grenzfläche zwischen der n-Typ-Halbleiterschicht (11e) und dem ersten transparenten leitfähigen Film (12).
  3. Solarzelle (10) nach Anspruch 1 oder 2, wobei ein Teil (12a) des ersten transparenten leitfähigen Films (12) in der Nähe der Grenzfläche zwischen der n-Typ-Halbleiterschicht (11e) und dem ersten transparenten leitfähigen Film (12) aus einem anderen Material hergestellt ist als ein Material eines Teils (12b) des ersten transparenten leitfähigen Films (12) auf der zur n-typ-Halbleiterschicht (11e) entgegengesetzten Seite des ersten transparenten leitfähigen Films (12).
  4. Solarzelle (10) nach einem der Ansprüche 1 bis 3, wobei der erste transparente leitfähige Film (12) und/oder der zweite transparente leitfähige Film (13) aus einem Metalloxid hergestellt sind.
  5. Verfahren zur Herstellung einer Solarzelle (10), umfassend einen fotoelektrischen Umwandlungskörper (11), der konfiguriert ist, um beim Empfangen von Licht fotogenerierte Träger zu erzeugen, wobei das Verfahren Folgendes umfasst:
    einen Schritt A des Ausbildens eines ersten transparenten leitfähigen Films (12) in einer Atmosphäre, die keinen Wasserstoff enthält, auf einer ersten Hauptfläche (S1) des fotoelektrischen Umwandlungskörpers (11); und
    einen Schritt B des Ausbildens eines zweiten transparenten leitfähigen Films (13) in einer Atmosphäre, die Wasserstoff enthält, auf einer zweiten Hauptfläche (S2), welche auf einer der ersten Hauptfläche (S1) entgegengesetzten Seite bereitgestellt ist, wobei
    die erste Hauptfläche (S1) durch eine amorphe n-Typ-Halbleiterschicht (11e) ausgebildet ist und wobei
    die zweite Hauptfläche (S2) durch eine amorphe p-Typ-Halbleiterschicht (11c) ausgebildet ist, und wobei
    in Schritt B der zweite transparente leitfähige Film (13) ausgebildet wird, während Wasserstoffatome zugeführt werden,
    dadurch gekennzeichnet, dass
    der fotoelektrische Umwandlungskörper (11) ein einkristallines n-Typ-Siliziumsubstrat (11a) umfasst, und dass
    der Wasserstoffatomgehalt des ersten transparenten leitfähigen Films (12) geringer ist als jener des zweiten transparenten leitfähigen Films (13).
  6. Verfahren zur Herstellung einer Solarzelle (10) nach Anspruch 5, wobei Schritt B nach Schritt A durchgeführt wird.
EP09721439.9A 2008-03-19 2009-03-18 Solarzelle und verfahren zu ihrer herstellung Active EP2261995B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008072484 2008-03-19
PCT/JP2009/055312 WO2009116580A1 (ja) 2008-03-19 2009-03-18 太陽電池及びその製造方法

Publications (3)

Publication Number Publication Date
EP2261995A1 EP2261995A1 (de) 2010-12-15
EP2261995A4 EP2261995A4 (de) 2015-07-08
EP2261995B1 true EP2261995B1 (de) 2019-05-22

Family

ID=41090979

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09721439.9A Active EP2261995B1 (de) 2008-03-19 2009-03-18 Solarzelle und verfahren zu ihrer herstellung

Country Status (6)

Country Link
US (1) US20110056552A1 (de)
EP (1) EP2261995B1 (de)
JP (1) JP5279814B2 (de)
KR (1) KR101444980B1 (de)
CN (1) CN101978508A (de)
WO (1) WO2009116580A1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011016122A1 (ja) * 2009-08-06 2011-02-10 三菱電機株式会社 太陽電池の電極形成方法、太陽電池の製造方法、太陽電池
KR20120074276A (ko) * 2009-09-17 2012-07-05 산요덴키가부시키가이샤 투명 도전막 및 이것을 구비한 장치
KR101656118B1 (ko) * 2009-09-18 2016-09-08 파나소닉 아이피 매니지먼트 가부시키가이샤 태양 전지, 태양 전지 모듈 및 태양 전지 시스템
TW201133874A (en) * 2009-09-18 2011-10-01 Sanyo Electric Co Solar battery cell, solar batterymodulee and solar battery system
MY166077A (en) * 2010-12-24 2018-05-23 Shinetsu Chemical Co Method for manufacturing solar cell element and solar cell element
JP5995204B2 (ja) * 2011-01-31 2016-09-21 パナソニックＩｐマネジメント株式会社 光電変換素子
WO2012157428A1 (ja) * 2011-05-13 2012-11-22 三洋電機株式会社 光電変換装置
JP5773194B2 (ja) * 2011-07-11 2015-09-02 国立大学法人東京農工大学 太陽電池の製造方法
JP2013030520A (ja) * 2011-07-27 2013-02-07 Sanyo Electric Co Ltd 太陽電池
JP5640948B2 (ja) * 2011-10-18 2014-12-17 三菱電機株式会社 太陽電池
WO2013061637A1 (ja) * 2011-10-27 2013-05-02 三菱電機株式会社 光電変換装置とその製造方法、および光電変換モジュール
JP2015084348A (ja) * 2012-02-13 2015-04-30 長州産業株式会社 光起電力素子及びその製造方法
KR101888370B1 (ko) * 2012-07-20 2018-09-20 주성엔지니어링(주) 태양전지 및 그 제조방법
WO2014068965A1 (ja) 2012-10-31 2014-05-08 三洋電機株式会社 太陽電池
GB2509097A (en) * 2012-12-19 2014-06-25 Rec Cells Pte Ltd Photovoltaic cell element having a specific electrode configuration
KR101424716B1 (ko) * 2013-02-04 2014-08-04 재단법인 녹색에너지연구원 고효율 단결정 실리콘 박막 태양전지 모듈 및 이의 제조 방법
KR101923728B1 (ko) 2013-02-06 2018-11-29 한국전자통신연구원 태양전지
DE102013203061A1 (de) * 2013-02-25 2014-08-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement, insbesondere Solarzelle und Verfahren zum Herstellen einer metallischen Kontaktierungsstruktur eines Halbleiterbauelementes
WO2014132516A1 (ja) * 2013-02-26 2014-09-04 三洋電機株式会社 太陽電池、太陽電池モジュール及び太陽電池の製造方法
CN105164819B (zh) * 2013-05-14 2017-03-29 三菱电机株式会社 光伏发电元件及其制造方法
JP2015072938A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子及びその製造方法
JP2015072936A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子
JP2015070255A (ja) * 2013-10-01 2015-04-13 長州産業株式会社 光発電素子及びその製造方法
JP2015072939A (ja) * 2013-10-01 2015-04-16 長州産業株式会社 光発電素子
JP6294694B2 (ja) * 2014-02-12 2018-03-14 株式会社カネカ 太陽電池およびその製造方法、ならびに太陽電池モジュール
WO2015142038A1 (ko) * 2014-03-17 2015-09-24 경희대학교 산학협력단 갈륨을 포함하는 p형 비정질 산화물 반도체, 이의 제조방법, 이를 포함하는 태양전지 및 이의 제조 방법
KR101821394B1 (ko) * 2016-01-14 2018-01-23 엘지전자 주식회사 태양전지
KR101867854B1 (ko) * 2016-09-23 2018-06-15 엘지전자 주식회사 태양 전지
CN108321239A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN109075218A (zh) * 2017-12-21 2018-12-21 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN108321240A (zh) * 2017-12-21 2018-07-24 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
JP7063709B2 (ja) * 2018-04-27 2022-05-09 株式会社アルバック 透明導電膜付き基板の製造装置、透明導電膜付き基板の製造方法
CN110634962A (zh) * 2018-06-01 2019-12-31 君泰创新（北京）科技有限公司 一种太阳能电池及其制备方法
KR102032279B1 (ko) * 2018-09-12 2019-10-15 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN110690310A (zh) * 2019-10-28 2020-01-14 成都晔凡科技有限公司 异质结太阳能电池片、叠瓦组件及其制造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4623601A (en) * 1985-06-04 1986-11-18 Atlantic Richfield Company Photoconductive device containing zinc oxide transparent conductive layer
US4816324A (en) * 1986-05-14 1989-03-28 Atlantic Richfield Company Flexible photovoltaic device
JPH0726195B2 (ja) 1988-08-19 1995-03-22 日本真空技術株式会社 透明導電膜の製造方法
US5078803A (en) * 1989-09-22 1992-01-07 Siemens Solar Industries L.P. Solar cells incorporating transparent electrodes comprising hazy zinc oxide
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
JP2006128630A (ja) * 2004-09-29 2006-05-18 Sanyo Electric Co Ltd 光起電力装置
JP5243697B2 (ja) * 2006-04-19 2013-07-24 株式会社カネカ 光電変換装置用透明導電膜とその製造方法
WO2008059857A1 (fr) * 2006-11-17 2008-05-22 Kaneka Corporation Dispositif de conversion photoélectrique en film mince
WO2008146693A1 (ja) * 2007-05-23 2008-12-04 National Institute Of Advanced Industrial Science And Technology 酸化物透明導電膜、およびそれを用いた光電変換素子、光検出素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
JP5279814B2 (ja) 2013-09-04
WO2009116580A1 (ja) 2009-09-24
EP2261995A4 (de) 2015-07-08
US20110056552A1 (en) 2011-03-10
EP2261995A1 (de) 2010-12-15
KR101444980B1 (ko) 2014-09-29
KR20100132504A (ko) 2010-12-17
JPWO2009116580A1 (ja) 2011-07-21
CN101978508A (zh) 2011-02-16

Similar Documents

Publication Publication Date Title
EP2261995B1 (de) Solarzelle und verfahren zu ihrer herstellung
EP2439780B1 (de) Photovoltaikzelle
EP2092571B1 (de) Frontelektrode mit einer dünnen metallfilmschicht und einer pufferschicht mit hoher arbeitsfunktion zur verwendung in einer fotovoltagen anordnung und herstellungsverfahren dafür
KR101024288B1 (ko) 실리콘계 박막 태양전지
WO2012020682A1 (ja) 結晶シリコン系太陽電池
WO2008024205A2 (en) Front contact with high work-function tco for use in photovoltaic device and method of making same
CN112186062A (zh) 一种太阳能电池及其制作方法
CN104081544A (zh) 用于硅基光电装置的高功函数缓冲层
JP6042679B2 (ja) 光電変換素子および光電変換素子の製造方法
KR101046358B1 (ko) 태양전지용 투명전극 제조방법
EP2579334A2 (de) Dünnschichtsolarzellenmodul
US11227966B2 (en) Photoelectric conversion device
WO2019163648A1 (ja) 太陽電池の製造方法
JP2005277252A (ja) 光起電力装置
CN114744052A (zh) 太阳能电池及光伏组件
JP2016149508A (ja) 太陽電池の製造方法
KR101529232B1 (ko) 박막 태양전지 및 그 제조방법
JPS6152992B2 (de)
CN107667435B (zh) 光电转换装置
KR101326539B1 (ko) Ｗｏ3 버퍼층을 포함하는 박막형 태양전지
JP5818789B2 (ja) 薄膜太陽電池
US20130153022A1 (en) Photoelectric conversion device and method for manufacturing the same
CN116469946A (zh) 太阳电池及其制备方法
JPH10321889A (ja) 太陽電池及びその製造方法
KR20120049504A (ko) 적층형 박막 태양전지 및 그의 제조방법

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20101007

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA RS

RIN1 Information on inventor provided before grant (corrected)

Inventor name: FUJISHIMA, DAISUKE

DAX Request for extension of the european patent (deleted)
RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20150609

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/072 20120101ALI20150602BHEP

Ipc: H01L 31/0224 20060101AFI20150602BHEP

Ipc: H01L 31/0747 20120101ALI20150602BHEP

Ipc: H01L 31/075 20120101ALI20150602BHEP

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LT

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20180615

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTG Intention to grant announced

Effective date: 20181206

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/0747 20120101ALI20150602BHEP

Ipc: H01L 31/0224 20060101AFI20150602BHEP

Ipc: H01L 31/072 20120101ALI20150602BHEP

Ipc: H01L 31/075 20120101ALI20150602BHEP

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602009058470

Country of ref document: DE

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1137146

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190615

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20190522

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190822

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190922

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190822

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190823

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1137146

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602009058470

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

26N No opposition filed

Effective date: 20200225

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20200331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200318

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200318

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20200318

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200318

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190522

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190922

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230321

Year of fee payment: 15

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20230328

Year of fee payment: 15