EP2205415A1 - Procédé pour fabriquer des tranches à partir de lingots - Google Patents

Procédé pour fabriquer des tranches à partir de lingots

Info

Publication number
EP2205415A1
EP2205415A1 EP08802563A EP08802563A EP2205415A1 EP 2205415 A1 EP2205415 A1 EP 2205415A1 EP 08802563 A EP08802563 A EP 08802563A EP 08802563 A EP08802563 A EP 08802563A EP 2205415 A1 EP2205415 A1 EP 2205415A1
Authority
EP
European Patent Office
Prior art keywords
ingot
carrier
adhesive
bonding
ingotträger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08802563A
Other languages
German (de)
English (en)
Inventor
Christine Fugger
Edith Zimmermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Ecoran GmbH
Original Assignee
Schott AG
Schott Solar AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott AG, Schott Solar AG filed Critical Schott AG
Publication of EP2205415A1 publication Critical patent/EP2205415A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/006Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/007Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04Joining glass to metal by means of an interlayer
    • C03C27/048Joining glass to metal by means of an interlayer consisting of an adhesive specially adapted for that purpose
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD

Definitions

  • the invention relates to a method for the production of wafers by dividing a material block mounted on a carrier.
  • Wafers are thin disks or carrier plates on which electronic, photoelectric or micromechanical devices are arranged.
  • Such wafers usually consist of polycrystalline or monocrystalline material, such as silicon, gallium arsenide, indium phosphide or z. B. also sapphire or corundum in the LED technology.
  • glass or plastic wafers are also used, such as in microlaboratory techniques.
  • For the production of such wafer slices usually larger blocks of a raw material (one or polycrystalline or even a-morph) are cut into individual slices, in particular sawn. Such material blocks are also referred to as ingots or as bricks.
  • the division itself is usually done with wire saws. Preference is given to multi-wire saws which divide a block into many wafers at the same time.
  • the ingots are arranged on a support plate and then fixed in the dicing or sawing device.
  • the Ingotblocks When sawing the Ingotblocks they must be completely, ie cut across its entire cross section away, which would lead to a sawing of the usually metal shegegut- or Maschinenenarme or carrier plate in the sawing device, whereby the saw wire would break.
  • a further carrier plate ingot carrier
  • a common material for this purpose is a glass plate. In this way, when sawing, the wafers can be completely sawn through the raw material blocks into this ingot carrier without causing a wire.
  • the sawn wafers remain firmly connected to the glass Ingotizi over an edge or stuck firmly. Ie. after sawing, the wafers hang on the sawed ingot carrier. After the end of the sawing process, the wafers are usually detached from the glass ingot carrier by means of a so-called uncapping process. In this case, the adhesive bond with which the remaining edge of the wafer is bonded to the Ingot uman solved. After that, the glassy ingot or wafer carrier is removed from the most metal carrier of the sawing device.
  • This steelgegutlini also referred to as a machine carrier, must always be laboriously cleaned by hand before reuse according to the prior art, the glass plate is discarded.
  • the metal Maschinen, Saw material carrier and the glass ingot carrier are cemented from one another under different conditions than the wafer carrier from the ingot carrier.
  • the bonding of ingot or the subsequent wafers with the glass ingot carrier as well as the bonding of Ingotarna with the metal carrier part of the sawing device is usually carried out by means of adhesives or adhesives comprising a fully hardening epoxy resin, in particular an epoxy resin containing at least two components. It has been shown that after the Entkitten often a part of the adhesive adheres to the wafer edge or the metal machine carrier firmly, which means that both, as already described, the pressuregegut- or machine support must be laboriously cleaned by hand also the wafers have to be cleaned by hand. Such a post-cleaning of the wafers creates an additional risk of breakage, which reduces the overall yield. It is therefore desirable to avoid such an effect. Adhesive residues adhering to the wafers prevent automatic wafer separation (also referred to as singulation of the wafers), so that this was not readily possible in the previous methods.
  • adhesion promoters for example, in the case of epoxy resin adhesives of the company DELO, the bonding agent DELO-SACO® SIL E of the same company or, in the case of araldite adhesives, Huntsman the adhesive BETAWIPE TM VP 04604 from Dw Automotive AG used.
  • the surface which has been degreased and, if appropriate, treated with adhesion promoter must be as promptly as possible, d. H.
  • the adhesive can be applied within a few minutes and connected to the counterpart to be bonded. For this reason, a production of ready-to-paste ingots is not readily possible and the production must be coordinated with one another in terms of time.
  • a method is to be provided which allows the production of parts to be bonded in stock, so that at least a production of ready-to-glue parts is available for a short time before bonding.
  • a thin reactive silicate layer rich in silanol groups activation of the surface to be bonded can be achieved.
  • a layer is also referred to as a polymeric (SiO) x network.
  • SiO polymeric
  • a layer is also by entry of hydrogen, z.
  • Example as a surface treatment in the manufacture of the glass, or by treatment with a hydrogen plasma possible.
  • Another option is sandblasting with silane. It has been shown that in this way the surface energy of the surface to be bonded can be increased from less than about 35 mN / m to 55 mN / m or even further.
  • the contact angle ⁇ formed between the adhesive and the surface to be bonded is therefore approximately 0 °, ie a maximum of 2 ° or a maximum of 3 °, in particular a maximum of 5 °, and is thus much lower than it can be achieved merely by cleaning, degreasing and using liquid adhesion promoters is.
  • the flow behavior of the adhesive is significantly improved, whereby a homogeneous distribution and full-surface wetting is ensured.
  • the coating according to the invention of the surface to be bonded with a reactive silicate layer can take place both by means of a plasma deposition and for the sake of simplicity by means of a thermally activated reaction (flame hydrolysis) of an Si-containing organic or inorganic compound in the flame of a combustible gas, which is usually more accurate than flaming Flammensilikatmaschine, is called.
  • a thermally activated reaction flame hydrolysis
  • Suitable Si-containing compounds are inorganic silanes, organosilicon compounds such as those of the structure
  • R 1 and R 2 are the same or different monovalent aliphatic hydrocarbon groups and n integer from 0 to 3.
  • Further suitable organosilicon compounds are those of the structure
  • R 3 is hydrogen or a monovalent aliphatic hydrocarbon group m integer of at least 1, in particular 1 or 2 and p integer of 3 to 5.
  • Examples of the monovalent aliphatic hydrocarbon groups are methyl, propyl, n-butyl, tertiary butyl, cyclic alkyl groups, AVinyl and allyl groups.
  • Examples of the compounds represented by the formulas are Si (OCH3) 4, Si (OCH2CH3) 4, CH3Si (OCH3) 3, hexamethyldisiloxane (HDMS), hexamethylcyclotrisiloxane, octamethylcyclotetrasiloxane and decamethylcyclopentasiloxane. It is also possible to add further additives to the flame which increase the reactivity of the reactive silicate layer.
  • the surface to be coated or flamed is guided past the flame at a defined distance, with the reactive silicate layer depositing on the preheated surface to be coated.
  • the surface must not thereby be heated in the manner described in the prior art temperature of more than 110 0 C. It is sufficient a temperature of max. 60 ° C, especially max. 50 ° C, and preferably from 45 0 C +/- 2 0 C completely off. This temperature is easily reached by an infrared heater or the To ensure flame. With the flame, the warm-up is particularly easy, because the burner needs to sweep the surface to be burned only once, without the flame was added to the Si-containing compound.
  • the distance to be selected from the burner front to the flaming surface depends on the operating mode of the burner.
  • the fuel gases can already be mixed inside the burner, optionally even with the Si-containing compound or all components can only be mixed outside the burner. In the latter case, of course, the distance to be chosen is greater than in the former.
  • the burner design and the operating mode is selected so that the distance is selected at least 10 mm and less than 150 mm. This distance is minimally greater than the length of the inner flame cone. Distances in the range of 25-50 mm are preferred if surfaces of the size approx. (400-800) mm x approx. 130 mm or (400-800) mm x approx. 160 mm are to be coated for the application.
  • An optimal distance can be easily determined by a few experiments and depends on the selected flame cone length and the respective concentration of the oxidizable silicon compound. But there are also distances still possible, as described for example in DE 3403894 C.
  • a burner with a round burner front side can be used, which is guided by hand over the surface to be flamed.
  • a narrow burner of width about the width of the surface to be flamed. This can be slowly and automatically led to warm up and flaming over the surface to be flamed. Moving speeds of 100 to 500 mm / s are preferably selected, with 150 to 300 mm / s or 180 to 250 mm / s and especially 200 +/- 10 mm / s being preferred.
  • the thickness of the thin (SiO) ⁇ layer is preferably at least 2 nm, in particular at least 3 or 4 nm, with at least 5 or 6 nm being preferred.
  • the maximum thickness is preferably at most max. 20 nm or 18 nm, with max. 15 nm and 13 nm are preferred.
  • Typical max. Thicknesses are 12 and 10 nm, respectively.
  • Typical fuel gases suitable for flaming are, in particular, hydrocarbon gases, C1-C5 gases, in particular C1-C4 gases, being preferred.
  • a most preferred fuel gas is propane.
  • the combustion oxygen needed for combustion can be supplied as pure gas or air.
  • the method according to the invention is preferably in addition to the support side, which is glued to the raw material block or ingot, and the second surface facing away from it coated with a polymeric (SiO) ⁇ network, ie that side which with the machine support Trennying. Sawing device is connected.
  • a polymeric (SiO) ⁇ network ie that side which with the machine support Trennying. Sawing device is connected.
  • An advantage of the procedure according to the invention is also that a longer time between flaming and the subsequent gluing, d. H. without further notice several days, in particular up to 2 days and in principle up to 24 hours, may pass.
  • the maximum time allowed for bonding is 1 h. This also shows the particular advantages of the method according to the invention.
  • the epoxy resin which is an at least 2-component resin is an amino-substituted silicic acid, in particular the general formula H 2 N-Ri-Si (OH) 3 or H 2 NR 1 -Si ( OR 2 ) S is admixed as an adhesion promoter, wherein Ri is an alkyl or alkoxy group of 1-20, preferably 1-10, in particular 1-5 C atoms and R 2 is an organic radical which is a methyl, ethyl, propyl - or isopropyl group can be. Most preferably, Ri contains one, two or three C atoms.
  • adhesives that are usable in the invention and cement below 100 0 C corresponds, preferably in hot water, it is ensured that the adhesive adheres to neither of the two initially bonded surfaces.
  • the machine support plate can even be removed from the hot water bath, for example by a robotic arm.
  • a typical ingot carrier used is preferably glass, but other typically suitable brittle-hard materials may be used.
  • the ingot carrier is used only once. In suitable cases, however, it has also proven to be expedient, simultaneously or instead of the side of the ingot carrier facing the saw machine carrier, to also fire the side of the machine carrier to be glued according to the invention. In a particularly preferred embodiment, however, all the parts to be joined together are subjected to a conventional degreasing treatment, in particular before flaming.
  • the flaming according to the invention preferably the flaming of the intradent carrier plate, can be used for sawing with all known sawing slurries. That is, glycol-based saw slurries, oil-based saw slurries, as well as water-based saw slurries are usable. This even sawgeslurries can be used, which cause the cured adhesive to swell during the sawing process. Sources in this case means that the cured adhesive substance undergoes an increase in mass by absorption of the carrier liquid.
  • the use of oil-based shegeslurries is generally not critical, since in these the cured adhesive undergoes no mass increase.
  • the epoxy resin contains a filler material, which may be particulate, in particular a filler, which swells in a suitable environment, especially under the action of temperature.
  • a filler material which may be particulate, in particular a filler, which swells in a suitable environment, especially under the action of temperature.
  • Such adhesives are z. B. from Valtech Corporation / USA or DE-LO / Germany available, but either not yet or only limited to the state of the art suitable for production.
  • Such fillers are particularly finely divided and can be both organic and mineral fillers, such as silicates or silicate mixtures.
  • Organic materials include cellulose or its derivatives or polyvinylpyrolidone.
  • the adhesive contains as filler a blistering agent which can be blistered thermally and / or by a suitable reagent, depending on the agent chosen.
  • a blistering agent which can be blistered thermally and / or by a suitable reagent, depending on the agent chosen.
  • agents are the expert z. B. known as alkyleneamines or can be determined by simple experiments.
  • an adhesive material in particular an epoxy material, which is not thermally but in the Acidic or alkaline at low temperatures, ie below 50 0 C or below 45 0 C, preferably in an acidic or alkaline medium entkittet.
  • minimum temperatures above room temperature especially above 30 ° C., preferably above 35 ° C., are preferred.
  • Typical pH values in acidic are less than 4, in alkaline at least 9, preferably at least 10 and especially at least 12.
  • the formed wafers are usually washed with a prior art washing solution to remove adherent sawing slurries.
  • a prior art washing solution contain water, at least one cleaner and surfactants.
  • they are entkittet in an acidic or alkaline immersion bath, wherein supportive ultrasound can be coupled into the dipping bath to mechanically assist the chemical release of the adhesive bond. It has been shown that, as a result of the flame-proofing of the ingot carrier, the adhesive bond does not dissolve already during the sawing process, but always only during the de-cementing process. In this Entkittungs remedies the inventively achieved decisive new advantage that all adhesive residues adhere to the glass plate.
  • adhesives are used for this purpose, which preferably have a softening point above 60 0 C, especially above 70 0 C, with adhesives having a softening point above 80 0 C are particularly preferred.
  • adhesives which are sufficiently strong in both the prevailing during sawing temperatures and at the prevailing during the Entkittung the bonding of Ingotong and Ingot temperatures and soften preferably at temperatures below 150 0 C, in particular below 130 0 C, with such adhesives are preferred with a softening point of less than 100 0 C, very particularly preferred are adhesives having a softening point of less than 97 0 C.
  • Particularly preferred fillers for another type of higher temperature detackifying adhesives are those which swell in hot water and thereby kitted off. With these adhesives is the formation of bubbles in the Entkitungstemperaturbe- range from 100 0 C to 80 0 C to observe that accompanies the breaking open of the adhesive bond.
  • Entkittung in hot water has the advantage over the Entkittung in a furnace that the machine support plate automated, z. B. by a robotic arm incl. Gripper, can be removed from the hot water.
  • Machine support plates are typically made of aluminum or stainless steel.
  • flaming according to the invention is used when using a machine support plate made of aluminum, aluminum silicates are formed on the surface, which form a very good adhesion transition of aluminum and epoxy resin adhesive.
  • the required according to the prior art mechanical removal of an AI 2 O 3 layer of the surface of the aluminum plate in particular before re-bonding can be omitted by the invention Flammen.
  • a high-alloy steel is suitably used, for.
  • a Si content of 0.5 to 3% eg a steel with the standard No. 1.2085, or the DIN designation X33CrS 16.
  • the molecules of the polymeric (SiO) x network have the possibility of forming bridge bonds to the Si of the high-alloy steel, thus improving the adhesive properties.
  • 1 shows a typical structure of the bonds of a composite to be cut from the machine or shegegutlini 1, which is bound by means of a first adhesive 2 to the upper side of the Ingotanys 3, to which in turn the Ingotany 4 glued by means of a second adhesive 5 is.
  • 2 shows the process steps required according to the prior art using the example of the use of a machine support plate made of aluminum.
  • FIG. 3 shows a schematic representation of a wafer sawing process using the procedure according to the invention.
  • glycol swells the cured adhesive present between Si ingot and the ingot carrier.
  • the reason for this is the presence of glycol-like compounds in the cured epoxy resin, which are loosened by glycol.
  • Table 1 shows the change in the compressive shear strength of a bonding of a roughened by the prior art glass plate surface with a silicon surface using the commercial adhesive Araldit 2101 or LMD 2684 depending on the storage time in glycol at 40 0 C.
  • a storage of 4 h at 40 0 C. simulates the operating conditions to which the bonding would be exposed in the real process.
  • Table 1 shows the comparison of a bonding of a rough glass sample according to the prior art for bonding a glass sample according to the invention smooth and flamed (flame-silicate) with a silicon sample.
  • the increased compressive shear strength is mainly due to the strength of the adhesive on the glass plate. For this reason, it can be observed that, when a gluing of ingot and glass plate, which has been carried out according to Experiment 2, has been removed, all adhesive residues remain hanging on the glass plate after wafer sawing has taken place. Hardly any remnants of the adhesive penetrated into the Entkittungs- bath with pH ⁇ 4.
  • Example 2 the increased compressive shear strength is sufficient to bond insects with a ground surface with a surface roughness of less than 1 ⁇ m to the ingot support so firmly that neither the ingot nor individual wafers unintentionally detach from the ingot support during sawing and fall off.
  • Example 2 the increased compressive shear strength is sufficient to bond insects with a ground surface with a surface roughness of less than 1 ⁇ m to the ingot support so firmly that neither the ingot nor individual wafers unintentionally detach from the ingot support during sawing and fall off.
  • Example 2 relates to the bonding of ingot carrier plate with the machine carrier plate.
  • Table 2 shows the comparison between the prior art and a first variant of the solution according to the invention.
  • the flame treatment of the glass plate is carried out as described in Example 1.
  • Example 3 relates to the bonding of ingot carrier plate with the machine carrier plate.
  • Table 3 shows how an adhesive that is available according to the prior art but can not be used in production in the case of bonding according to the prior art can still be used by applying a first variant of the process according to the invention.
  • the flame treatment of the glass plate is carried out as described in Example 1.
  • the prior art shown in experiment 6 shows that the compressive shear strength of the bonding of a plate made of high-alloy steel with DIN designation X33CrS16 with the rough glass plate achieved with the adhesive Valtron 4110 remains below the required 3.5 MPa and thus only limited in production is usable.
  • the curing conditions of the adhesive were chosen as recommended by the manufacturer.
  • Prior art experiment 6 used the manufacturer's recommended primer.
  • the burden of the sawing process by storage for 4 h in glycol at 40 0 C was in turn simulated.
  • the softening of the filler-containing adhesive takes place in an oven at 110 0 C (30 min.).
  • the use of a spatula may assist the peeling process but is not mandatory.
  • the machine carrier comes off so easily and cleanly that an automated removal of the machine carrier plate is possible.
  • Example 4 relates to the bonding of ingot carrier plate with the machine carrier plate.
  • Table 4 shows the comparison between the adhesive obtainable with the prior art and a second variant of the procedure according to the invention.
  • the curing conditions have been previously optimized and found to be different than recommended by the manufacturer of the adhesive.
  • the burden of the sawing process by storage for 4 h in glycol at 40 0 C was in turn simulated.
  • the softening of the adhesive was carried out by storage in 85 0 C warm water for 20 min.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un procédé pour fabriquer des tranches à partir de lingots comprenant les étapes consistant à coller le lingot (4) sur une première surface d'un support de lingot (3), à diviser le lingot en tranches et à dissoudre l'assemblage obtenu par collage, en libérant les tranches ainsi formées. Le procédé se caractérise en ce que la première surface du support de lingot comporte une couche x riche en groupes silanols (SiO).
EP08802563A 2007-09-24 2008-09-24 Procédé pour fabriquer des tranches à partir de lingots Withdrawn EP2205415A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007045455A DE102007045455A1 (de) 2007-09-24 2007-09-24 Verfahren zur Herstellung von Wafern aus Ingots
PCT/EP2008/008086 WO2009040109A1 (fr) 2007-09-24 2008-09-24 Procédé pour fabriquer des tranches à partir de lingots

Publications (1)

Publication Number Publication Date
EP2205415A1 true EP2205415A1 (fr) 2010-07-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP08802563A Withdrawn EP2205415A1 (fr) 2007-09-24 2008-09-24 Procédé pour fabriquer des tranches à partir de lingots

Country Status (3)

Country Link
EP (1) EP2205415A1 (fr)
DE (1) DE102007045455A1 (fr)
WO (1) WO2009040109A1 (fr)

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