Classifications

• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
  • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
  • C03C17/23—Oxides
  • C03C17/25—Oxides by deposition from the liquid phase
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J61/00—Gas-discharge or vapour-discharge lamps
  • H01J61/02—Details
  • H01J61/025—Associated optical elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J61/00—Gas-discharge or vapour-discharge lamps
  • H01J61/02—Details
  • H01J61/30—Vessels; Containers
  • H01J61/35—Vessels; Containers provided with coatings on the walls thereof; Selection of materials for the coatings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
  • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01K—ELECTRIC INCANDESCENT LAMPS
  • H01K1/00—Details
  • H01K1/28—Envelopes; Vessels
  • H01K1/32—Envelopes; Vessels provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01K—ELECTRIC INCANDESCENT LAMPS
  • H01K1/00—Details
  • H01K1/28—Envelopes; Vessels
  • H01K1/32—Envelopes; Vessels provided with coatings on the walls; Vessels or coatings thereon characterised by the material thereof
  • H01K1/325—Reflecting coating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01K—ELECTRIC INCANDESCENT LAMPS
  • H01K3/00—Apparatus or processes adapted to the manufacture, installing, removal, or maintenance of incandescent lamps or parts thereof
  • H01K3/005—Methods for coating the surface of the envelope
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/20—Materials for coating a single layer on glass
  • C03C2217/21—Oxides
  • C03C2217/213—SiO2
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2217/00—Coatings on glass
  • C03C2217/20—Materials for coating a single layer on glass
  • C03C2217/21—Oxides
  • C03C2217/24—Doped oxides
• • C—CHEMISTRY; METALLURGY
  • C03—GLASS; MINERAL OR SLAG WOOL
  • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
  • C03C2218/00—Methods for coating glass
  • C03C2218/10—Deposition methods
  • C03C2218/11—Deposition methods from solutions or suspensions
  • C03C2218/112—Deposition methods from solutions or suspensions by spraying
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B5/00—Optical elements other than lenses
  • G02B5/02—Diffusing elements; Afocal elements
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
  • Y10T428/261—In terms of molecular thickness or light wave length
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
  • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
  • Y10T428/00—Stock material or miscellaneous articles
  • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
  • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
  • Y10T428/264—Up to 3 mils
  • Y10T428/265—1 mil or less

Definitions

• the invention relates to a method for producing a quartz glass component with a reflector layer by producing a reflector layer of quartz glass acting as a diffuse reflector on at least part of the surface of a substrate body made of quartz glass.
• the invention relates to a quartz glass component having a reflector layer, comprising a substrate body made of quartz glass whose surface is at least partially covered by an SiO 2 reflector layer acting as a diffuse reflector.
• Quartz glass components are used for a variety of applications, such as in the manufacture of lamps as cladding tubes, pistons, cover plates or reflector support for lamps and radiators in the ultraviolet, infrared and visible spectral range, in chemical apparatus construction or semiconductor manufacturing in the form of reactors and equipment from Quartz glass for the treatment of semiconductor devices, carrier trays, bells, crucibles, protective shields or simple quartz glass components, such as tubes, rods, plates, flanges, rings or blocks.
• the reflector is fixedly connected to the respective radiator or it is a separate from the radiator reflector component.
• the reflector layer is produced by means of a slurry process, in which a highly filled, pourable, aqueous SiO 2 slurry is produced which contains amorphous SiO 2 particles.
• the amorphous SiO 2 particles are produced by wet milling of SiO 2 grains and have a particle size in the range up to a maximum of 500 ⁇ m, with SiO 2 particles having particle sizes in the range between 1 ⁇ m and 50 ⁇ m making up the largest volume fraction.
• the SiO 2 slickener is in the form of a slip layer on the quartz glass
• spraying, electrostatically assisted spraying, flooding, spinning, dipping and spreading are suggested.
• the quartz glass layer produced in this way can be used as a diffuse reflector for radiation over a wide wavelength range.
• the flow behavior of the known highly filled slurry is not optimally suitable for some of the coating techniques mentioned, and therefore the reproducible production of a uniform coating in individual cases difficult.
• the invention is therefore based on the object to provide a method which enables a cost-effective and reproducible production of uniform SiO 2 reflector layers on quartz glass components.
• the object of the invention is to provide a quartz glass component obtained by the method, which is characterized by a crack-free and uniform SiO 2 reflector layer.
• this object is achieved on the basis of a method of the type mentioned in the present invention, that the reflector layer is produced by thermal spraying by SiO 2 particles supplied to an energy carrier, by means of this or melted and deposited on the substrate body.
• the reflector layer is produced by thermal spraying.
• SiO 2 particles in the form of a fluid mass, such as powder, sol or suspension (dispersion) supplied to an energy carrier are at least partially melted and spun onto the prepared surface of the substrate body to be coated at high speed.
• the energy source is usually a fuel gas-oxygen flame or a plasma jet, but can also be designed as an arc, laser beam or the like.
• SiO 2 particles are melted on and deposited on the substrate body, without a completely transparent surface layer is formed without sufficient reflectance, which would then be useless as a reflector layer for diffuse reflection.
• a limited transparency to subregions of the reflector layer is acceptable and can even be achieved. wishes to be, such as for the sealing of surface areas.
• a transparency-reduced opacity of the layer can also be compensated by a greater layer thickness.
• the coating of the substrate body surface and the solidification of the layer takes place in a single operation.
• the reflector layer is produced by plasma spraying, wherein a plasma jet or laser beam is used as the energy carrier.
• the plasma spraying allows a comparatively high energy input as well as high speeds when spin-coating the molten or fused SiO 2 particles onto the substrate body surface. As a result, relatively thick and firmly adhering reflector layers can be produced in a short time.
• the SiO 2 particles are generally supplied to the plasma flame in powder form or in the form of a suspension (suspension plasma spraying; SSP).
• SSP suspension plasma spraying
• the so-called SPPS process solution precursor plasma spraying
• the plasma flame precursor compounds for the SiO 2 synthesis are supplied and the oxidation to SiO 2 in the Pias- Maflannnne or takes place during deposition on the substrate body surface.
• SAP process particularly fine particles can be used, which facilitates the production of thin layers, for example a final dense layer for sealing.
• the reflector layer is produced by flame spraying, wherein an arc or a fuel gas-oxygen flame are used as the energy carrier.
• the temperature control is easier to set compared to plasma spraying, so that a given opacity of the reflector layer is more accurate and reproducible to comply.
• these methods are characterized by a low energy input into the substrate body.
• the SiO 2 particles have particle sizes in the range up to a maximum of 200 ⁇ m, preferably at most 100 ⁇ m, with SiO 2 particles having particle sizes in the range between 1 ⁇ m and 60 ⁇ m making up the largest volume fraction.
• Reflector layers generally consist of several thermally sprayed layers of SiO 2 particles.
• SiO 2 particles with particle sizes above 200 ⁇ m, on the one hand, thin reflector layers are scarcely producible and, on the other hand, there is the risk that the particles will not be able to absorb enough energy from the energy source in the short heating time available and therefore sintering the layer is made difficult.
• particles smaller than 1 ⁇ m are difficult to handle and easily clog injection, burner or other feed nozzles.
• the SiO 2 particles particularly preferably have a particle size distribution which is characterized by a D 50 value of less than 50 ⁇ m, preferably less than 40 ⁇ m, particularly preferably less than 30 ⁇ m.
• sintering of the SiO 2 particles is possible without complete transparent melting together and possible sintering of the SiO 2 particles. Lich without deformation of the substrate body to allow. Particles in the above size range show in this regard an advantageous sintering behavior. They have a high sintering activity and therefore already sinter at a comparatively low temperature, in which on the one hand by plastic deformation supported material transport processes, which could cause a particularly rapid vitrification to transparent quartz glass, not yet take place to any appreciable extent, and in which also the substrate body not or not materially affected.
• the SiO 2 particles have a multimodal particle size distribution, with a first maximum of the size distribution in the range of 2 and 6 ⁇ m and a second maximum in the range of 20 to 60 ⁇ m.
• At least one third of the SiO 2 particles is spherical.
• the SiO 2 particles are supplied to the energy carrier in the form of granules, in which the SiO 2 particles are agglomerated into granulate particles having sizes in the range from 2 to 300 ⁇ m, but preferably less than 100 ⁇ m.
• the SiO 2 content of the SiO 2 particles is at least 99.9% by weight.
• a reflector layer is produced with a layer thickness in the range between 50 ⁇ m and 3000 ⁇ m, preferably in the range between 100 ⁇ m and 800 ⁇ m.
• the concomitant reduced opacity of the layer may be offset by greater thickness.
• reflector layers with a layer thickness of more than 3000 ⁇ m can only be produced at great expense and, as a rule (with essentially opaque layers), the additional effect of the greater layer thickness is barely noticeable.
• SiO 2 reflector layers with thicknesses below 50 ⁇ m it is difficult to reproducibly adhere to a given diffuse reflection, since even small differences in the opacity of the layer have a noticeable effect on the reflectance.
• a procedure is preferred in which a plurality of successive layer layers are applied for producing the reflector layer.
• the SiO 2 particles are provided with a dopant, or the energy carrier is supplied in addition to the SiO 2 particles, a dopant.
• the reflector layer produced in this way contains one or more dopants which can give the reflector component an additive functionality adapted to the specific application or simplify its production.
• dopants which can give the reflector component an additive functionality adapted to the specific application or simplify its production. Examples of this include an adaptation of the reflection and thermal insulation by a dopant selectively absorbing in a certain wavelength range, an increase in the service life by a doping agent which increases the viscosity of quartz glass, an improvement in the chemical resistance or a reduction in the risk of contamination emanating from the component , and especially in a plasma process, the improvement of the coupling of the Plasmas by a dopant that absorbs radiation in the region of the main emission wavelength of the plasma.
• a further advantageous application results when a high-temperature volatile dopant is used.
• the volatile dopant evaporates, sublimates or releases to form or release a gas.
• the gas enters the reflector layer and facilitates the creation and maintenance of high opacity.
• one or more of the compounds from the group: ZrO 2 , Al 2 O 3 , ZrSiO 4 , oxide carbide or nitride compounds of rare earth metals, SiC and Si 3 N 4 , are used.
• the dopants may be evenly distributed in the layer, or they may be concentrated in separate layers, for example, in interlayers. Also layers with a concentration gradient of dopant are suitable.
• An addition of aluminum in the quartz glass forms in the reflector layer Al 2 O 3, which increases the etch resistance and the temperature stability of quartz glass and thus leads to an extension of the life of the coated quartz glass component.
• additions of nitrogen or carbon, which are incorporated into the quartz glass structure in the form of nitrides or carbides, provide stiffening of the glass structure and, for example, a better etch resistance.
• Si 3 N 4 can easily decompose at high temperatures and thus facilitates the setting of high opacity in the reflector layer by forming gases.
• the SiO 2 particles are amorphous.
• amorphous SiO 2 particles in the beginning reduces the risk of crystal formation during the production of the reflector layer, which can lead to rejection of the thus coated component. It has proved to be advantageous if the SiO 2 particles are produced from silicon-containing precursor compounds, preferably from precursor compounds which additionally contain nitrogen.
• Suitable starting substances for SiO 2 -containing precursor compounds are, for example, TEOS or siloxanes.
• Silazanes also contain nitrogen. The incorporation of nitrogen into the quartz glass of the reflector layer increases its thermal stability and improves the etch resistance.
• a procedure is particularly preferred in which the thermal spraying in the presence of a nitrogen-containing gas, in particular in the presence of NH 3 or N 2 O, takes place.
• the thermal spraying can be carried out, for example, by means of a plasma flame as the energy carrier and with the supply of the nitrogen-containing gas to the plasma flame.
• This treatment is particularly suitable as a final treatment for producing a surface layer containing nitrogen.
• the above-stated object is achieved, starting from a component of the type mentioned in the introduction, in that the SiO 2 reflector layer is formed as an opaque layer produced by thermal spraying.
• the quartz glass component according to the invention has a completely or partially opaque reflector layer of doped or undoped quartz glass produced by thermal spraying.
• the opaque quartz glass acts as a diffuse optical reflector.
• the component is preferably used in the process reactor, lamp and reflector manufacturing, wherein it is in the form of a tube, piston, a chamber, HaIb- shell, spherical or ellipsoidal segment, plate, a heat shield or the like.
• the quartz glass component is either part of an optical radiator or a heating reactor with an integrated reflector, this being formed by the SiO 2 cover layer, or the component forms a separate reflector and is used in conjunction with an optical radiator or heating reactor.
• the quartz glass component is obtained by means of the method according to the invention, the reflector layer being characterized not only by its opacity but also by high adhesive strength, a high homogeneity of its optical properties, in particular the effect as a diffuse reflector, which is decisively determined by a uniform pore distribution uniformly high density and characterized by excellent chemical and thermal resistance, mechanical strength and high thermal shock resistance. Particularly noteworthy is their freedom from cracks and the even distribution of density.
• the opacity of the reflector layer is shown by the fact that the direct spectral transmission in the wavelength range between 200 nm and 2500 nm is below 2%.
• the SiO 2 reflector layer is preferably made of a material of inherent material with respect to the material of the substrate body. "Arteigenheit” is understood here to mean that the SiO 2 content of the glass composition differs from that of the substrate body by a maximum of 1% by weight, preferably by a maximum of 0.1% by weight. On the one hand, the thermal expansion coefficients between the quartz glass of the component and the reflector layer are made possible as far as possible, and thus a particularly good adhesion is achieved.
• the substrate body is designed as a quartz glass enveloping body for receiving a radiation emitter.
• the quartz glass enveloping body encloses a radiation emitter, such as a heating coil, a carbon ribbon or a radiation-emitting gas filling, and at the same time a part of the enveloping body is provided with the diffusely reflecting SiO 2 reflector layer.
• the SiO 2 cover layer is provided on the outside of the enveloping body facing away from the radiation emitter, so that impairments of the radiation emitter or of the atmosphere within the enveloping body are avoided.
• the SiO 2 reflector layer has a reflection coefficient of at least 0.6, preferably at least 0.8, in the wavelength range from 1000 nm to 2000 nm.
• the reflection coefficient is understood to be the intensity ratio of the incident perpendicular to the reflector to the reflected radiation.
• An integrating sphere is suitable for measuring the diffusely reflected radiation.
• FIG. 1 shows a reactor for the treatment of wafers whose outer wall is formed by a layer of opaque quartz glass, in a view on the front side,
• Figure 2 shows a cladding tube made of quartz glass for an optical radiator whose cylinder surface is covered with a reflector layer of opaque quartz glass
• Figure 3 is a reflection curve for the reflector layers shown in Figures 1 and 2.
• Figure 1 shows schematically and as a longitudinal section a dome-shaped reactor 1, as it is used for etching or CVD processes in semiconductor production.
• the reactor 1 consists of a dome-shaped base body 2 made of transparent quartz glass, which is provided with an outer layer 3 made of opaque quartz glass and on the underside of which a flange 5 made of opaque quartz glass is provided.
• the quartz glass reactor has an outer diameter of 420 mm, a height of 800 mm and a wall thickness of 4 mm.
• the outer layer 3 is produced by means of thermal spraying, as will be explained in detail below.
• the thickness of the outer layer 3 is about 350 microns. It has a high diffuse reflection over a large wavelength range and, in contrast to gold reflector layers, it can also be used on a reactor 1 when it is inductively heated. A gold reflector layer would be destroyed by coupled energy immediately.
• the layer substrate of the base body 2 is sandblasted and then cleaned to eliminate other surface contaminants, in particular of alkali and Erdalkakali compounds, in 30% hydrofluoric acid.
• a powder of synthetic SiO 2 which consists of spherical, amorphous SiO 2 primary particles with an average grain size of around 50 ⁇ m.
• the SiO 2 primary particles together with 2% by weight of silicon nitride powder ( ⁇ - Si 3 N 4 ) and dispersed in demineralized water. After setting a liter weight of 1310 g and a viscosity of 150 mPas, the suspension is centrifugally atomized by means of a conventional spray dryer.
• a spherical SiO 2 spray granules are obtained with a size distribution which is characterized by a D 50 value of 32 microns and by a pore volume of 0.6 g / l and an average pore radius of about 20 nm. After drying at 400 ° C., the granules are thermally consolidated by heating to 800 ° C.
• the granules are processed in a vacuum plasma spraying system with an Ar-H 2 plasma and a plasma power of 45 kW on the base body 2 as an opaque outer layer 3.
• the admixed Si 3 N 4 decomposes into SiO 2 and nitrogen-containing gases, which are partially enclosed in the granules and prevent the density sintering and transparency of the granules.
• the resulting porosity contributes significantly to the diffuse reflection of the outer layer 3 produced.
• FIG. 2 schematically shows a radial cross-section of a cladding tube 20 for an excimer radiator for use in the UV wavelength range.
• the main emission direction of the cladding tube 20 in the embodiment downwards and is symbolized by the directional arrow 21.
• a reflector in the form of an O pakbe Anlagenung 23 is formed with a thickness of about 1 mm, the production of which is explained in more detail below.
• the layer surface of the cladding tube 20 is sandblasted and then cleaned to remove surface contaminants, especially alkali and Erdalkakali compounds in 30% hydrofluoric acid.
• a powder mixture of synthetic SiO 2 is provided, which is composed of spherical, amorphous SiO 2 particles with a bimodal particle size distribution.
• 50 wt .-% of the powder consist of SiO 2 particles having an average particle size of 15 microns and 50 wt .-% consist of SiO 2 particles having an average particle size of 40 microns.
• the powder mixture is made by combustion flame spraying using an acetylene-oxygen combustion mixture on the top 22 of the cladding tube 20 applied as an opaque coating 23.
• the surface of the cladding tube is about 150 mm away from the spray nozzle.
• FIG. 3 shows the reflection behavior of the diffuse reflector produced according to Example 2 (FIG. 2) in the form of an opaque SiO 2 opaque layer in the wavelength range from 200 to 2800 nm.
• the reflectance "R” is in%, based on the diffuse reflection of "spectral”, and plotted on the x-axis, the wavelength ⁇ of the working radiation in nm.
• the reflection measurement is performed by means of an integrating sphere.
• the curve 31 shows the reflection curve in the case of a 350 ⁇ m thick opaque SiO 2 opaque layer in comparison to a 1 mm thick gold layer on a quartz glass substrate body (curve 32).
• the SiO 2 opaque layer of undoped SiO 2 in the wavelength range between about 200 and 2100 nm has an approximately uniform reflectance R above 80%.
• the diffuse reflection in this wavelength range is consistently higher than the diffuse reflection of the gold coating, as currently used (it should be noted, however, that the gold coating also produces a proportion of specular reflection).
• the diffuse reflection of the SiO 2 opaque layer is above the comparison standard used (Spektralon) and it is to be expected that this also applies to the even shorter wavelength VUV range.
• This high reflection in the deep UV range opens up the possibility of using the component according to FIG. 2 for UV lamps, for example in the area of UV sterilization.

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• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Organic Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
• Geochemistry & Mineralogy (AREA)
• Materials Engineering (AREA)
• Life Sciences & Earth Sciences (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Optics & Photonics (AREA)
• Glass Compositions (AREA)
• Optical Elements Other Than Lenses (AREA)
• Glass Melting And Manufacturing (AREA)
• Surface Treatment Of Glass (AREA)
• Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)

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• 2006
  • 2006-12-22 DE DE102006062166A patent/DE102006062166B4/de not_active Expired - Fee Related
• 2007
  • 2007-12-13 EP EP07857521A patent/EP2102125A1/de not_active Withdrawn
  • 2007-12-13 CN CN2007800478897A patent/CN101568497B/zh active Active
  • 2007-12-13 WO PCT/EP2007/063874 patent/WO2008077807A1/de active Application Filing
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