EP2100335A1 - Electrode frontale à base d'oxyde de zinc dopée à l'yttrium pour une utilisation dans un dispositif photovoltaïque ou autre dispositif similaire - Google Patents
Electrode frontale à base d'oxyde de zinc dopée à l'yttrium pour une utilisation dans un dispositif photovoltaïque ou autre dispositif similaireInfo
- Publication number
- EP2100335A1 EP2100335A1 EP07862852A EP07862852A EP2100335A1 EP 2100335 A1 EP2100335 A1 EP 2100335A1 EP 07862852 A EP07862852 A EP 07862852A EP 07862852 A EP07862852 A EP 07862852A EP 2100335 A1 EP2100335 A1 EP 2100335A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode
- yttrium
- photovoltaic device
- layer
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 80
- 229910052727 yttrium Inorganic materials 0.000 title claims abstract description 49
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 40
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000576 coating method Methods 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910004613 CdTe Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 61
- 239000000463 material Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 25
- 229910007667 ZnOx Inorganic materials 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000011701 zinc Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- -1 or the like) Chemical compound 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL07862852T PL2100335T3 (pl) | 2007-01-08 | 2007-12-13 | Przednia elektroda oparta na tlenku cynku, domieszkowana itrem, do wykorzystania w urządzeniu fotowoltaicznym lub podobnym |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/650,564 US8334452B2 (en) | 2007-01-08 | 2007-01-08 | Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like |
| PCT/US2007/025484 WO2008085264A1 (fr) | 2007-01-08 | 2007-12-13 | Electrode frontale à base d'oxyde de zinc dopée à l'yttrium pour une utilisation dans un dispositif photovoltaïque ou autre dispositif similaire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP2100335A1 true EP2100335A1 (fr) | 2009-09-16 |
| EP2100335B1 EP2100335B1 (fr) | 2010-06-16 |
Family
ID=39276103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07862852A Not-in-force EP2100335B1 (fr) | 2007-01-08 | 2007-12-13 | Electrode frontale à base d'oxyde de zinc dopée à l'yttrium pour une utilisation dans un dispositif photovoltaïque ou autre dispositif similaire |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8334452B2 (fr) |
| EP (1) | EP2100335B1 (fr) |
| AT (1) | ATE471573T1 (fr) |
| DE (1) | DE602007007241D1 (fr) |
| ES (1) | ES2347494T3 (fr) |
| PL (1) | PL2100335T3 (fr) |
| WO (1) | WO2008085264A1 (fr) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080302414A1 (en) * | 2006-11-02 | 2008-12-11 | Den Boer Willem | Front electrode for use in photovoltaic device and method of making same |
| US20080105299A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same |
| US7964788B2 (en) * | 2006-11-02 | 2011-06-21 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080178932A1 (en) * | 2006-11-02 | 2008-07-31 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US8012317B2 (en) * | 2006-11-02 | 2011-09-06 | Guardian Industries Corp. | Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same |
| US8076571B2 (en) * | 2006-11-02 | 2011-12-13 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US8203073B2 (en) * | 2006-11-02 | 2012-06-19 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US20080105293A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
| US8334452B2 (en) | 2007-01-08 | 2012-12-18 | Guardian Industries Corp. | Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like |
| US20080169021A1 (en) * | 2007-01-16 | 2008-07-17 | Guardian Industries Corp. | Method of making TCO front electrode for use in photovoltaic device or the like |
| US20080223430A1 (en) * | 2007-03-14 | 2008-09-18 | Guardian Industries Corp. | Buffer layer for front electrode structure in photovoltaic device or the like |
| US20080308145A1 (en) * | 2007-06-12 | 2008-12-18 | Guardian Industries Corp | Front electrode including transparent conductive coating on etched glass substrate for use in photovoltaic device and method of making same |
| US20080308146A1 (en) * | 2007-06-14 | 2008-12-18 | Guardian Industries Corp. | Front electrode including pyrolytic transparent conductive coating on textured glass substrate for use in photovoltaic device and method of making same |
| US7888594B2 (en) * | 2007-11-20 | 2011-02-15 | Guardian Industries Corp. | Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index |
| US20090194155A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
| US20090194157A1 (en) * | 2008-02-01 | 2009-08-06 | Guardian Industries Corp. | Front electrode having etched surface for use in photovoltaic device and method of making same |
| US8501522B2 (en) * | 2008-05-30 | 2013-08-06 | Gtat Corporation | Intermetal stack for use in a photovoltaic cell |
| US7915522B2 (en) | 2008-05-30 | 2011-03-29 | Twin Creeks Technologies, Inc. | Asymmetric surface texturing for use in a photovoltaic cell and method of making |
| US8212246B2 (en) * | 2008-08-13 | 2012-07-03 | Board Of Regents, The University Of Texas System | N-type doping in metal oxides and metal chalcogenides by electrochemical methods |
| US8022291B2 (en) * | 2008-10-15 | 2011-09-20 | Guardian Industries Corp. | Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device |
| TW201027779A (en) * | 2008-11-19 | 2010-07-16 | First Solar Inc | Photovoltaic devices including heterojunctions |
| SG178225A1 (en) * | 2009-08-03 | 2012-03-29 | 3M Innovative Properties Co | Process for forming optically clear conductive metal or metal alloy thin films and films made therefrom |
| KR20110014913A (ko) * | 2009-08-06 | 2011-02-14 | 삼성전자주식회사 | 태양 전지 모듈 및 그 제조 방법 |
| EP2470694A4 (fr) * | 2009-08-24 | 2013-10-30 | First Solar Inc | Oxyde conducteur transparent dopé |
| WO2011057189A1 (fr) * | 2009-11-08 | 2011-05-12 | First Solar, Inc. | Dépôt de matériau de contact repos au moyen de mélanges de gaz dopés à l'eau |
| FR2972446B1 (fr) * | 2011-03-09 | 2017-11-24 | Saint Gobain | Substrat pour cellule photovoltaique |
| US20130081688A1 (en) * | 2011-10-03 | 2013-04-04 | Intermolecular, Inc. | Back contacts for thin film solar cells |
| US11367800B1 (en) | 2012-04-20 | 2022-06-21 | Magnolia Solar, Inc. | Optically-thin III-V solar cells and methods for constructing the same |
| US9614108B1 (en) * | 2012-04-20 | 2017-04-04 | Magnolia Solar, Inc. | Optically-thin chalcogenide solar cells |
| KR101920768B1 (ko) | 2012-09-11 | 2018-11-22 | 엘지디스플레이 주식회사 | 광전소자 및 이의 제조 방법 |
| US9365450B2 (en) * | 2012-12-27 | 2016-06-14 | Intermolecular, Inc. | Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance |
| JP6817020B2 (ja) * | 2016-02-22 | 2021-01-20 | 株式会社タムロン | 赤外線透過膜、光学膜、反射防止膜、光学部品、光学系及び撮像装置 |
| US11908965B1 (en) * | 2023-03-16 | 2024-02-20 | Lumenco, Llc | Solar photovoltaic (PV) panels or devices with infrared (IR) reflecting films for enhanced efficiency |
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2007
- 2007-01-08 US US11/650,564 patent/US8334452B2/en not_active Expired - Fee Related
- 2007-12-13 EP EP07862852A patent/EP2100335B1/fr not_active Not-in-force
- 2007-12-13 AT AT07862852T patent/ATE471573T1/de not_active IP Right Cessation
- 2007-12-13 WO PCT/US2007/025484 patent/WO2008085264A1/fr active Application Filing
- 2007-12-13 ES ES07862852T patent/ES2347494T3/es active Active
- 2007-12-13 PL PL07862852T patent/PL2100335T3/pl unknown
- 2007-12-13 DE DE602007007241T patent/DE602007007241D1/de active Active
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| Title |
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| See references of WO2008085264A1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| ES2347494T3 (es) | 2010-10-29 |
| US20080163929A1 (en) | 2008-07-10 |
| US8334452B2 (en) | 2012-12-18 |
| EP2100335B1 (fr) | 2010-06-16 |
| WO2008085264A1 (fr) | 2008-07-17 |
| PL2100335T3 (pl) | 2010-11-30 |
| US8936842B2 (en) | 2015-01-20 |
| DE602007007241D1 (de) | 2010-07-29 |
| US20130074922A1 (en) | 2013-03-28 |
| ATE471573T1 (de) | 2010-07-15 |
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